CN111048647A - Light emitting device - Google Patents
Light emitting device Download PDFInfo
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- CN111048647A CN111048647A CN201911344520.3A CN201911344520A CN111048647A CN 111048647 A CN111048647 A CN 111048647A CN 201911344520 A CN201911344520 A CN 201911344520A CN 111048647 A CN111048647 A CN 111048647A
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- encapsulant
- emitting chip
- emitting device
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- 239000008393 encapsulating agent Substances 0.000 claims abstract description 125
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 239000000463 material Substances 0.000 claims description 14
- 238000000605 extraction Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 229920002050 silicone resin Polymers 0.000 description 5
- 239000000470 constituent Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to a light emitting device. A light emitting device according to an embodiment of the present invention includes a mounting substrate; a light emitting chip attached to the attachment substrate and emitting ultraviolet rays; a first encapsulant covering at least a part of a side surface of the light emitting chip, an outer surface of the first encapsulant forming a curved surface; and a reflection frame formed on the upper surface of the mounting substrate and along an outer side of the first encapsulant, wherein a portion of the light emitted from the light emitting chip is refracted at an outer surface of the first encapsulant toward an upper direction of the light emitting chip, and another portion of the light emitted from the light emitting chip is reflected at an inner wall of the reflection frame toward the upper direction of the light emitting chip.
Description
The present application is a divisional application of a patent application having an application date of 2019, 1/8, an application number of 201980000924.2, entitled "light emitting device".
Technical Field
The present invention relates to a light emitting device.
Background
When a current is applied to a Light Emitting Diode (LED), light having a plurality of wavelengths generated by recombination of electrons and holes is emitted from a junction portion of p and n type semiconductors. Light emitting diodes have various advantages such as long life, low power supply, and excellent driving characteristics, compared to filaments used in conventional light emitting devices, and thus demand for the light emitting diodes is continuously increasing.
A light emitting diode (hereinafter, referred to as a light emitting chip) in a chip unit is packaged with an encapsulant that functions as a phosphor and a lens and applied to a light emitting device. The light emitted from the light emitting chip passes through the encapsulant and is emitted to the outside. At this time, in the case where the light emitted from the light emitting chip is ultraviolet rays, the encapsulant may be cured by the ultraviolet rays. If the encapsulant is cured by ultraviolet rays, cracks may occur at portions exhibiting weak physical properties or relatively strong stress. If cracks occur in the encapsulant, the reliability of the light-emitting device is reduced.
Disclosure of Invention
Technical problem
The present invention addresses the problem of providing a light-emitting device in which cracking of an encapsulant of a light-emitting chip is prevented and reliability is improved.
Another object of the present invention is to provide a light-emitting device capable of improving light extraction efficiency.
Technical scheme
A light emitting device according to an embodiment of the present invention includes a mounting substrate, a light emitting chip, and a first encapsulant. The light emitting chip is attached to the mounting substrate and emits ultraviolet rays. And, the first encapsulant covers at least a portion of the side surface of the light emitting chip. At this time, the outer surface of the first encapsulant is configured as a curved surface.
Advantageous effects
The light emitting device according to the embodiment of the invention forms the encapsulant at the portion of the light emitting chip except the top surface vertex, thereby preventing the crack of the encapsulant from occurring near the vertex of the light emitting chip to improve the reliability.
Also, the light emitting device according to the embodiment of the invention forms the outer surface of the encapsulant through which the ultraviolet rays of the light emitting chip pass to have a curvature, thereby improving light extraction efficiency.
In the light-emitting device according to the embodiment of the invention, the encapsulant is formed only on the side surface and a part of the upper surface of the light-emitting chip, so that the cost can be reduced.
Drawings
Fig. 1 and 2 are schematic views illustrating a light emitting device according to a first embodiment of the present invention.
Fig. 3 is a schematic diagram showing cracks generated in an encapsulant of a conventional light-emitting device.
Fig. 4 and 5 are graphs showing light output of the light emitting device according to the structure of the encapsulant.
Fig. 6 and 7 are schematic views illustrating a light emitting device according to a second embodiment of the present invention.
Fig. 8 and 9 are schematic views illustrating a light emitting device according to a third embodiment of the present invention.
Fig. 10 is a schematic view showing a light emitting device according to a fourth embodiment of the present invention.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments described below are provided as examples in order to fully convey the concept of the invention to those skilled in the art. Therefore, the present invention is not limited to the following embodiments, and may be embodied in other forms. In the drawings, the widths, lengths, thicknesses, and the like of the constituent elements may be exaggerated for convenience of explanation. Throughout the specification, the same reference numerals denote the same constituent elements, and similar reference numerals denote similar constituent elements.
According to an embodiment of the present invention, a light emitting device includes a mounting substrate, a light emitting chip, and a first encapsulant. The light emitting chip is attached to the mounting substrate and emits ultraviolet rays. And, the first encapsulant covers at least a portion of a side surface of the light emitting chip. At this time, the outer surface of the first encapsulant is configured as a curved surface.
The light emitting chip is bonded to the mounting substrate in a flip chip manner.
As another embodiment, the light emitting device may further include: and the sub-mounting substrate is mounted on the mounting substrate and is electrically connected with the mounting substrate. At this time, the light emitting chip is mounted on the sub mount substrate, and is further bonded to the sub mount substrate in a flip chip manner.
And, the sub mount substrate may be bonded to the mount substrate in a flip chip manner. Alternatively, the submount substrate may be wire bonded to the mounting substrate.
The leads are located at a lower height than an upper surface of the light emitting chip.
The first encapsulant is formed to cover the leads.
The first encapsulant may be formed using epoxy resin or silicone resin.
The thickness of the first encapsulant increases from the upper portion to the lower portion of the side surface of the light emitting chip.
Light emitted from the side surface of the light emitting chip and incident on the first encapsulant is refracted at the outer surface of the first encapsulant toward the upper direction of the light emitting chip.
As still another embodiment, the light emitting device may further include: and the second encapsulant covers the upper surface of the light-emitting chip.
The second encapsulant is formed not to cover a vertex of an upper surface of the light emitting chip.
The second encapsulant may be formed using epoxy resin or silicone resin.
As still another embodiment, the light emitting device may further include: and the reflecting frame is formed on the upper surface of the mounting substrate and is formed along the outer side of the first encapsulating agent.
The light emitted from the light emitting chip and directed toward the reflection frame is reflected at the inner wall of the reflection frame in a direction toward the upper portion of the light emitting chip.
The inner wall of the reflection frame may have a slope.
For example, the distance between the inner walls of the reflection frame facing each other in the upward direction from the mount substrate is larger.
The upper surface of the reflection frame is disposed higher than the upper surface of the light emitting chip.
The following description will be specifically made with reference to the drawings.
Fig. 1 and 2 are schematic views illustrating a light emitting device according to a first embodiment of the present invention.
Fig. 1 is a perspective view of a light emitting device 100 according to a first embodiment, and fig. 2 is a sectional view of the light emitting device 100 according to the first embodiment (a1-a 2).
Referring to fig. 1 and 2, a light emitting device 100 according to a first embodiment includes a mounting substrate 110, a light emitting chip 120, and a first encapsulant 130.
The mounting substrate 110 is not shown in detail, but is composed of an insulating material and a conductive material. The conductive material constitutes a circuit pattern electrically connected to the light emitting chip 120. The insulating material is located between the circuit patterns to insulate the circuit patterns.
For example, the mounting substrate 110 may be a metal substrate including a plurality of lead frames 111 and an insulating material 112 surrounding the lead frames 111. Although not shown in fig. 1, a portion of the lead frame 111 is exposed to the outside through the side and the lower surface of the mounting substrate 110. The exposed portions of the lead frame 111 function as electrical connections to other components outside. Alternatively, the mounting substrate 110 may be a circuit substrate including at least one insulating layer and a circuit pattern layer.
The light emitting chip 120 is attached to the mounting substrate 110. The light emitting chip 120 is a light emitting diode chip that emits ultraviolet rays.
The light emitting chip 120 has a structure in which an n-type first conductive semiconductor layer, a p-type second conductive semiconductor layer, and an active layer are stacked. At this time, the active layer is positioned between the first conductive type semiconductor layer and the second conductive type semiconductor layer. A first electrode connected to the first conductive type semiconductor layer and a second electrode connected to the second conductive type semiconductor layer are located at a lower portion of the light emitting chip 120. Accordingly, the light emitting chip 120 is mounted and connected to the mounting substrate 110 by Flip chip bonding (Flip chip bonding).
The light emitting chip 120 generates ultraviolet rays in the active layer. The generated ultraviolet rays are emitted to the outside through the upper surface and the side surface of the light emitting chip 120.
As shown in fig. 1, the first encapsulant 130 is formed to surround the side of the light emitting chip 120. For example, the first encapsulant 130 may be formed using epoxy resin or silicone resin. The thickness of the first encapsulant 130 on the side of the light emitting chip 120 is thicker from the upper portion to the lower portion. In fig. 1, a case where the contour of the lower surface of the first encapsulant 130 is a quadrangular structure is illustrated. However, the first encapsulant 130 may be formed to have a lower surface profile having various structures such as a circle, an ellipse, or a quadrangle having curved corners.
In one conventional embodiment, an encapsulant functioning as a lens is formed to cover the side and upper surfaces of the light emitting chip. The encapsulant may also be subject to cracking due to discoloration or weak curing by ultraviolet rays emitted from the light emitting chip. In particular, stress concentration (stress concentration) occurs in a portion of the encapsulant covering the apex portion of the light-emitting chip. Stress concentration is a phenomenon in which stress is concentrated on a local portion such as a corner portion of an object or a portion where a cross section sharply changes. Therefore, when the encapsulant is cured by ultraviolet rays, stress concentration is most likely to occur near the apex of the light emitting chip. Therefore, as shown in fig. 3, the encapsulant 10 is cured by the ultraviolet rays emitted from the light emitting chip 20, and further cracks occur in a portion covering the apex of the light emitting chip. Since the lower surface of the light emitting chip is not covered with the encapsulant and is in contact with the substrate, a position where a crack of the encapsulant is most likely to occur is near the apex of the upper surface of the light emitting chip. Cracks in the encapsulant that occur near the apex of the light emitting chip can then propagate throughout the encapsulant.
In order to solve the crack generated at the apex of the light emitting chip, a case having a cavity formed therein and a transparent window have been used. That is, in the light emitting device according to the other embodiment of the related art, after the light emitting chip is attached to the cavity of the case, the cavity is covered with the transparent window. However, the adhesive force of the adhesive between the case and the transparent window may be reduced due to heat generation of the light emitting chip. Also, the heat generation of the light emitting chip may cause the temperature of the air inside the chamber to increase. At this time, an additional air discharge path must be formed in the case in order to discharge the higher temperature internal air. In addition, quartz, which is a relatively expensive material, is used as the transparent window, and a structure for mounting the transparent window must be formed in the case. The light emitting device according to the other embodiment of the present invention for solving the problem of cracking of the encapsulant according to the one embodiment of the present invention has a high cost and a complicated process due to the air discharge path and the transparent window.
In the present embodiment, the first encapsulant 130 is formed not to cover the upper surface of the light emitting chip 120 but to surround only the side surface of the light emitting chip 120. That is, the first encapsulant 130 does not surround the vertex of the upper surface of the light emitting chip 120, and thus a crack problem does not occur at the vertex of the light emitting chip 120.
In the embodiment of the present invention, no additional constituent part is disposed on the upper portion of the light emitting chip 120. Therefore, the ultraviolet rays emitted through the upper surface of the light emitting chip 120 directly propagate in the upper direction of the light emitting device 100.
The ultraviolet rays emitted through the side of the light emitting chip 120 pass through the first encapsulant 130. According to an embodiment of the present invention, the outer face of the first encapsulant 130 is configured as a curved surface. At this time, the ultraviolet rays passing through the first encapsulant 130 are refracted at the outside of the first encapsulant 130. Accordingly, the propagation direction of the ultraviolet rays passing through the first encapsulant 130 may be determined according to the curvature of the outer surface of the first encapsulant 130.
The refractive power for refracting the ultraviolet rays varies according to the curvature of the outer surface of the first encapsulant 130. Accordingly, the ultraviolet irradiation range and the ultraviolet extraction efficiency of the light emitting device 100 can be controlled by reducing or increasing the curvature of the outer surface of the first encapsulant 130.
The curvature of the first encapsulant 130 may be controlled according to the amount and viscosity of the applied material when the first encapsulant 130 is formed.
Since the light emitting device 100 according to the embodiment of the present invention is not formed to surround the entire light emitting chip 120 but is formed to surround the side of the light emitting chip 120, material costs are saved. Also, the light emitting device 100 can direct the ultraviolet rays emitted from the side surface of the light emitting chip 120 toward the upper direction of the light emitting device 100 through the first encapsulant 130, thereby improving the light extraction efficiency.
The material of the first encapsulant 130, such as epoxy resin or silicone resin, may be applied to the side of the light emitting chip 120 or the upper surface of the mounting substrate 110 by dotting. For example, by finely adjusting the amount of the material of the first encapsulant 130 discharged by an ejector (injector) of a piezoelectric element type, the volume of the first encapsulant 130, the curvature of the outer surface, and the like can be precisely controlled.
At this time, the material is coated in such a manner that it flows down to the upper surface of the mounting substrate 110 through the side of the light emitting chip 120, or is coated on the upper surface of the mounting substrate 110 along the circumference of the light emitting chip 120. The first encapsulant 130 thus applied covers the side surfaces of the light emitting chip 120 as shown in fig. 2 by surface tension, but is constructed in a structure in which the outer surface has curvature.
The present embodiment has been described in the case where the first encapsulant 130 is formed in a dotted manner. However, the manner of forming the first encapsulant 130 is not limited thereto. The first encapsulant 130 may be formed in any manner as long as it can be formed to cover the side surfaces of the light emitting chip 120 except the top surface vertex and the outer surface has a curvature.
The light emitting device 100 thus formed can solve the crack of the first encapsulant 130 occurring near the top surface of the light emitting chip 120 through a simple process and without adding additional cost. Also, the light emitting device 100 can prevent the occurrence of cracks of the first encapsulant 130 while saving material costs and improving light extraction efficiency.
Hereinafter, the description of the embodiments will be omitted with respect to the same configurations as those of the above embodiments. Therefore, the omitted description refers to the description of the light emitting device with respect to the above-described embodiment.
Fig. 4 and 5 are graphs showing light output of the light emitting device according to the structure of the encapsulant.
Referring to fig. 4, the first encapsulant 130 of the light emitting device 100 forms a first structure 131, a second structure 132, a third structure 133, and a fourth structure according to the amount of material applied to the light emitting chip 120 and the mounting substrate 110. The amount of material applied by the first encapsulant 130 gradually decreases from the first structure 131 to the third structure 133. Accordingly, the angle (θ) of the first encapsulant 130 to the upper surface of the mounting substrate 110 becomes gradually larger from the first structure 131 to the third structure 133. Also, the fourth structure is to omit the first encapsulant 130 in the light emitting device 100.
Fig. 5 is a graph showing the light output results of the encapsulants of the respective structures shown in fig. 4 by ratios. Referring to fig. 5, the light output of the light emitting device 100 is 100% on the basis of the fourth structure in which the first encapsulant 130 is omitted. At this time, when the first encapsulant 130 is the first structure 131, the light output is 106%, when it is the second structure 132, the light output is 108%, and when it is the third structure 133, the light output is 111%. The light emitting devices 100 according to the first to third structures 131 to 133 of the first encapsulant 130 each have improved light output compared to the (fourth structure) light emitting device 100 in which the first encapsulant 130 is omitted. The light output ratios are the third structure 133, the second structure 132, and the first structure 131 in this order. That is, the larger the angle (θ) between the outer surface of the first encapsulant 130 and the upper surface of the mounting substrate 110, the higher the light output.
As such, the light output of the light emitting device 100 may be adjusted according to the structure of the first encapsulant 130. Also, the structure of the first encapsulant 130 may be adjusted according to the amount of the material of the first encapsulant 130.
Fig. 6 and 7 are schematic views illustrating a light emitting device according to a second embodiment of the present invention.
Fig. 6 is a plan view of a light emitting device 200 according to a second embodiment of the present invention, and fig. 7 is a sectional view of the light emitting device 200 according to the second embodiment (B1-B2).
Referring to fig. 6, the light emitting device 200 according to the second embodiment includes a mounting substrate 110, a light emitting chip 120, a first encapsulant 130, and a reflective frame 210.
The reflective frame 210 is formed along the outer side of the first encapsulant 130 on the upper surface of the mounting substrate 110. That is, the reflective frame 210 is formed along the outer wall of the first encapsulant 130 or the outline of the mounting substrate 110. Therefore, the light emitting device 200 has a structure in which the light emitting chip 120 and the first encapsulant 130 are attached to a cavity formed by the inner wall of the reflective frame 210.
Also, the light emitting device 200 of the present embodiment is formed such that the first encapsulant 130 does not cover the entire side surface of the light emitting chip 120 but covers only a portion of the side surface.
A part of the ultraviolet rays emitted through the side surfaces of the light emitting chip 120 are incident on the first encapsulant 130, and the other part of the ultraviolet rays face the reflective frame 210. The ultraviolet rays incident to the first encapsulant 130 pass through the outside of the first encapsulant 130 toward the upper portion of the light emitting device 200. The ultraviolet rays directed toward the reflection frame 210 are reflected by the reflection frame 210 and directed toward the upper portion of the light emitting device 200.
As such, even if the first encapsulant 130 is formed to cover only a portion of the side surface of the light emitting chip 120, the light emitting device 200 according to the present embodiment can achieve high light extraction efficiency through the reflective frame 210. That is, the light emitting device 200 according to the present embodiment can further save the material cost with respect to the first encapsulant 130 compared to the first embodiment.
And, the upper surface of the reflection frame 210 is higher than the light emitting chip 120. Therefore, the inner wall of the reflection frame 210 faces the entire side surface of the light emitting chip 120, thereby efficiently reflecting the ultraviolet rays emitted from the side surface of the light emitting chip 120. Fig. 7 illustrates a case where the inner wall of the reflection frame 210 is perpendicular to the upper surface of the mounting substrate 110. However, the slope of the inner wall of the reflection frame 210 may be changed according to the ultraviolet irradiation range of the light emitting device 200, and the like. For example, the inner walls of the reflection frame 210 may be inclined such that the distance between the inner walls facing each other in the upward direction from the mounting substrate 110 is larger.
Fig. 8 and 9 are schematic views illustrating a light emitting device according to a third embodiment of the present invention.
Fig. 8 is a plan view of a light emitting device 300 according to a third embodiment, and fig. 9 is a sectional view of the light emitting device 300 according to the third embodiment (C1-C2).
Referring to fig. 8 and 9, the light emitting device 300 according to the third embodiment includes a mounting substrate 110, a light emitting chip 120, a first encapsulant 130, and a second encapsulant 310.
According to the third embodiment, the second encapsulant 310 is positioned on the upper surface of the light emitting chip 120. At this time, the second encapsulant 310 is formed to cover the upper surface of the light emitting chip 120 but not to cover the vertex of the upper surface of the light emitting chip 120. In the case where the second encapsulant 310 covers the vertex of the light emitting chip 120, a crack may occur in the second encapsulant 310 due to stress concentration occurring near the vertex of the light emitting chip 120. Therefore, in order to prevent the crack of the second encapsulant 310, the second encapsulant 310 is formed on the upper surface of the light emitting chip 120 and is formed at a portion of the light emitting chip 120 except for the vertex.
For example, the second encapsulant 310 may be formed in a convex lens shape with an upper portion thereof being convex. The second encapsulant 310 formed in the same structure as the convex lens can concentrate ultraviolet rays emitted through the upper surface of the light emitting chip 120 toward the upper center of the light emitting device 300. Alternatively, the second encapsulant 310 may be formed to have a concave-convex structure on the surface. The second encapsulant 310 having the concave-convex structure on the surface can prevent the ultraviolet rays from being totally reflected by the second encapsulant 310, so that the light extraction efficiency of the light emitting device 300 can be improved.
As described above, the second encapsulant 310 may be formed in various structures according to the effects required for the light emitting device 300.
For example, the second encapsulant 310 may be formed using epoxy resin or silicone resin.
Fig. 10 is a schematic view showing a light emitting device according to a fourth embodiment of the present invention.
Referring to fig. 10, the light emitting device 400 according to the fourth embodiment includes a mounting substrate 110, a sub-mounting substrate 410, a light emitting chip 120, and a first encapsulant 130.
The sub mount substrate 410 is mounted on the mount substrate 110, and the light emitting chip 120 is mounted on the sub mount substrate 410.
The sub mount substrate 410 may be changed according to a difference in specification between the light emitting chip 120 and the mount substrate 110.
The sub-mount substrate 410 is connected to the mount substrate 110 and the light emitting chip 120, respectively. The sub-mount substrate 410 thus formed electrically connects the mount substrate 110 and the light emitting chip 120. The submount 410 may have any structure and be made of any material as long as it can electrically connect the mounting substrate 110 and the light emitting chip 120. For example, the sub-mount substrate 410 may be a printed circuit board, a ceramic substrate on which electrodes are formed, or a substrate including aluminum nitride (AlN) or silicon carbide (SiC) having high thermal conductivity.
The sub-mount substrate 410 may be connected to the mount substrate 110 by flip-chip bonding or by wire bonding.
Referring to fig. 10, the sub-mount substrate 410 has a circuit pattern formed on an upper surface thereof to be electrically connected to the light emitting chip 120 and the mounting substrate 110. Therefore, the sub-mount substrate 410 and the light emitting chip 120 are flip-chip bonded. The submount substrate 410 and the mounting substrate 110 are Wire-bonded (Wire bonding) by wires 420. At this time, the lead 420 is located at a height lower than the upper surface of the light emitting chip 120. That is, in the present embodiment, a case where the sub mount substrate 410 and the mount substrate 110 are connected by wire bonding will be described as an example.
The first encapsulant 130 is formed to cover the side of the light emitting chip 120, the side of the sub-mount substrate 410, and the leads 420. The first encapsulant 130 thus formed can prevent cracks from occurring at the top surface vertex of the light emitting chip 120 and protect the wire 420 from external environments such as impact, dust, moisture, and the like.
Further, in the light emitting device 400 of the present embodiment, the sub mount substrate 410 is disposed in the lower direction of the light emitting chip 120, so that the ultraviolet rays emitted from the lower surface of the light emitting chip 120 can be reflected. Further, since the first encapsulant 130 is also positioned around the lower portion of the light emitting chip 120 by the sub-mount substrate 410, the ultraviolet rays emitted from the lower portion of the light emitting chip 120 and passing through the first encapsulant 130 can be refracted by the sub-mount substrate 410 toward the upper portion of the light emitting device 400.
Also, since the height of the first encapsulant 130 is increased and the length of the outer surface is lengthened due to the sub-mount substrate 410, it is easy to form the outer surface having a small curvature or to finely adjust the curvature of the outer surface.
Although not shown, the light emitting device 400 of the fourth embodiment may be further formed with a second encapsulant (310 of fig. 8 and 9) or a reflective frame (210 of fig. 6 and 7) covering the upper surface portion of the light emitting chip 120 except for the top surface vertex.
While the embodiment in which the light emitting device 400 includes the sub mount substrate 410 is explained, the explanation about the embodiment in which the sub mount substrate 410 and the mounting substrate 110 are connected by the flip chip bonding method is omitted. However, in the light-emitting device 400 of the present embodiment, it is obvious that the sub mount substrate 410 connected to the mounting substrate 110 by the flip chip bonding method can be applied.
As described above, the present invention is specifically described with reference to the embodiments shown in the drawings, but the preferred embodiments of the present invention are described above, and therefore the present invention should not be construed as being limited to the embodiments described above, and the scope of the present invention should be construed as being defined in the claims and their equivalents.
Claims (10)
1. A light emitting device comprising:
mounting a substrate;
a light emitting chip attached to the attachment substrate and emitting ultraviolet rays;
a first encapsulant covering at least a part of a side surface of the light emitting chip, an outer surface of the first encapsulant forming a curved surface;
a reflection frame formed on the upper surface of the mounting substrate and formed along an outer side of the first encapsulant,
wherein a part of light emitted from the light emitting chip is refracted at an outer surface of the first encapsulant toward an upper direction of the light emitting chip,
another portion of the light emitted from the light emitting chip is reflected at the inner wall of the reflection frame to face an upper direction of the light emitting chip.
2. The light emitting device according to claim 1,
the thickness of the first encapsulant increases from the upper portion to the lower portion of the side surface of the light emitting chip.
3. The light emitting device according to claim 1,
the upper end of the first encapsulant is disposed to be as high or lower as the apex of the upper surface of the light emitting chip.
4. The light emitting device according to claim 1,
the first encapsulant is made of a material that transmits light of the light emitting chip.
5. The light emitting device according to claim 1,
the inner wall of the reflection frame has a slope.
6. The light emitting device according to claim 5,
the distance between the inner walls of the reflection frame facing each other in the upward direction from the mounting substrate is larger.
7. The light emitting device according to claim 1,
the upper surface of the reflection frame is disposed higher than the upper surface of the light emitting chip.
8. The light emitting apparatus according to claim 1, further comprising:
a sub-mount substrate mounted on and electrically connected to the mount substrate,
the light-emitting chip is attached to the sub-mount substrate and bonded to the sub-mount substrate in a flip chip manner.
9. The light emitting apparatus according to claim 1, further comprising:
a second encapsulant covering an upper surface of the light emitting chip,
wherein the second encapsulant does not cover a vertex of the upper surface of the light emitting chip.
10. The light emitting device according to claim 9,
the second encapsulant is made of a material that transmits light of the light emitting chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911344520.3A CN111048647B (en) | 2018-01-09 | 2019-01-08 | Light emitting device |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020180002967A KR20190084807A (en) | 2018-01-09 | 2018-01-09 | Light emitting device |
| KR10-2018-0002967 | 2018-01-09 | ||
| CN201980000924.2A CN110249438B (en) | 2018-01-09 | 2019-01-08 | Light emitting device |
| CN201911344520.3A CN111048647B (en) | 2018-01-09 | 2019-01-08 | Light emitting device |
| PCT/KR2019/000286 WO2019139334A1 (en) | 2018-01-09 | 2019-01-08 | Light emitting device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980000924.2A Division CN110249438B (en) | 2018-01-09 | 2019-01-08 | Light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111048647A true CN111048647A (en) | 2020-04-21 |
| CN111048647B CN111048647B (en) | 2024-04-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911344520.3A Active CN111048647B (en) | 2018-01-09 | 2019-01-08 | Light emitting device |
| CN201980000924.2A Active CN110249438B (en) | 2018-01-09 | 2019-01-08 | Light emitting device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980000924.2A Active CN110249438B (en) | 2018-01-09 | 2019-01-08 | Light emitting device |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20190084807A (en) |
| CN (2) | CN111048647B (en) |
| WO (1) | WO2019139334A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7494133B2 (en) | 2021-03-11 | 2024-06-03 | シチズン電子株式会社 | Light-emitting device |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN111048647B (en) | 2024-04-26 |
| CN110249438B (en) | 2024-04-02 |
| WO2019139334A1 (en) | 2019-07-18 |
| KR20190084807A (en) | 2019-07-17 |
| CN110249438A (en) | 2019-09-17 |
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