KR20120108749A - Light emitting device package - Google Patents

Light emitting device package Download PDF

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Publication number
KR20120108749A
KR20120108749A KR1020110027022A KR20110027022A KR20120108749A KR 20120108749 A KR20120108749 A KR 20120108749A KR 1020110027022 A KR1020110027022 A KR 1020110027022A KR 20110027022 A KR20110027022 A KR 20110027022A KR 20120108749 A KR20120108749 A KR 20120108749A
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South Korea
Prior art keywords
light emitting
emitting device
short circuit
circuit prevention
wire
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KR1020110027022A
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Korean (ko)
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장성욱
박종길
김새실
이방원
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삼성전자주식회사
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Priority to KR1020110027022A priority Critical patent/KR20120108749A/en
Publication of KR20120108749A publication Critical patent/KR20120108749A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
    • H01L2224/48996—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/48997—Reinforcing structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/85951—Forming additional members, e.g. for reinforcing

Abstract

PURPOSE: A light emitting device package is provided to prevent a short circuit of a wire by using a short circuit preventing unit. CONSTITUTION: A body(110) includes a top body(111) and a bottom body(112). A plurality of lead frames(120) surround a part of the bottom body. A light emitting device(130) is mounted on one of the lead frames and emits light. A wire(150) connects the light emitting device to another frame. A short circuit preventing unit(170) is formed near the wire to prevent a short circuit of the wire.

Description

발광소자 패키지{Light emitting device package}A light emitting device package

본 발명은 발광소자 패키지에 관한 것으로, 보다 상세하게는 온도에 따라 수지몰딩부의 수축 및 팽창으로 인하여 발광소자에 전류를 공급하는 와이어가 단락되는 것을 방지할 수 있는 발광소자 패키지에 관한 것이다.The present invention relates to a light emitting device package, and more particularly, to a light emitting device package capable of preventing a short circuit of a wire supplying a current to the light emitting device due to shrinkage and expansion of the resin molding part according to temperature.

일반적으로, 발광다이오드(Light Emitting Diode; LED)와 같은 발광소자(Light Emitting Device)는 화합물 반도체(compound semiconductor)의 pn접합을 통해 발광원을 구성함으로서, 다양한 색의 빛을 구현할 수 있는 반도체 소자를 말한다. 이러한 발광소자는 전기에너지를 광에너지로 변환하는 반도체 소자로서, 에너지 밴드 갭에 따른 특정 파장의 빛을 내는 화합물 반도체로 구성되며, 광통신 및 디스플레이, 컴퓨터 모니터 등과 같은 디스플레이, LCD용 평면광원(Back Light Unit; BLU)에서 조명까지 그 사용분야가 점차 확대되고 있는 추세이다.In general, a light emitting device, such as a light emitting diode (LED), forms a light emitting source through a pn junction of a compound semiconductor to form a semiconductor device capable of realizing various colors of light. Say. Such a light emitting device is a semiconductor device that converts electrical energy into optical energy, and is composed of a compound semiconductor that emits light of a specific wavelength according to an energy band gap. The field of use is gradually expanding from unit (BLU) to lighting.

종래의 발광소자 패키지는 소정의 회로패턴이 형성된 기판, 예를 들어 인쇄회로기판(Printed Circuit Board; PCB)상에 발광소자를 부착하고, 부착된 발광소자와 기판의 회로패턴 사이에 금속 와이어(wire)가 연결되어 발광소자의 외부로의 전기적인 신호전달경로를 이루고 있으며, 기판의 상부면에 발광소자를 외부환경으로부터 보호하기 위한 에폭시 수지와 같은 수지몰딩부가 도포되어 있다.The conventional light emitting device package attaches a light emitting device on a substrate having a predetermined circuit pattern, for example, a printed circuit board (PCB), and a metal wire between the attached light emitting device and the circuit pattern of the substrate. ) Is connected to form an electrical signal transmission path to the outside of the light emitting device, and a resin molding part such as an epoxy resin is coated on the upper surface of the substrate to protect the light emitting device from the external environment.

그런데, 와이어가 공정 중 또는 테스트 중에 구조상의 문제로 부러지거나 또는 발광소자로부터 떨어지는 문제가 발생된다. 특히, 수지몰딩부가 주위온도의 변화에 따라 수축과 팽창을 하는데, 이러한 수지몰딩부의 수축 및 팽창시 와이어에 스트레스를 주게 되며, 이러한 스트레이스 인하여 와이어가 부러지거나 또는 발광소자로부터 떨어지는 문제가 발생될 수 있다.However, there is a problem that the wire breaks due to structural problems during processing or testing or falls off from the light emitting device. In particular, the resin molding contracts and expands in accordance with the change of the ambient temperature, which causes stress on the wire when the resin molding contracts and expands, which may cause the wire to break or fall from the light emitting device. have.

본 발명은 상기한 문제점을 해결하기 위한 것으로, 수지몰딩부의 수축 및 팽창이 와이어에 미치는 영향을 최소화 함으로써 와이어가 발광소자로부터 단락되는 것을 방지할 수 있는 발광소자 패키지를 제공한다.The present invention is to solve the above problems, to provide a light emitting device package that can prevent the wire from being short-circuited from the light emitting device by minimizing the effect of shrinkage and expansion of the resin molding portion on the wire.

본 발명의 일 측면에 따른 발광소자 패키지는The light emitting device package according to an aspect of the present invention

오목형상으로 반사부가 형성된 상부몸체와, 상부몸체의 하측에 마련된 하부몸체를 구비하는 몸체, A body having an upper body having a concave reflection portion and a lower body provided below the upper body,

상부몸체와 하부몸체의 사이에 마련되며, 서로 소정간격 이격되어 있는 복수의 리드프레임,A plurality of lead frames provided between the upper body and the lower body and spaced apart from each other by a predetermined distance;

복수의 리드 프레임 중 어느 하나의 리드 프레임 상에 설치되어 광을 출사하는 발광소자,A light emitting element provided on one of the plurality of lead frames and emitting light;

발광소자와 나머지 리드 프레임을 연결하는 와이어,A wire connecting the light emitting element to the rest of the lead frame,

발광소자와 리드프레임을 둘러싸는 수지몰딩부와,A resin molding part surrounding the light emitting element and the lead frame;

수지몰딩부의 탄성변형을 줄여주는 단락방지부를 구비한다.It is provided with a short circuit prevention portion to reduce the elastic deformation of the resin molding.

단락방지부는 하부몸체로부터 상측으로 소정길이 돌출되도록 마련되어 있다.A short circuit prevention part is provided so that a predetermined length may protrude upward from a lower body.

단락방지부는 하부몸체와 동일한 재질로 형성된다.Short circuit protection is formed of the same material as the lower body.

단락방지부는 와이어의 높이보다도 더 높게 돌출된다.The short circuit prevention portion protrudes higher than the height of the wire.

단락방지부의 표면에는 광을 반사하는 반사물질이 도포되어 있다.The surface of the short circuit prevention portion is coated with a reflective material that reflects light.

반사물질은 은(Ag) 및 알루미늄(Al) 중 어느 하나이다.The reflecting material is one of silver (Ag) and aluminum (Al).

단락방지부는 사다리꼴 기둥형상으로 이루어진다.The short circuit prevention part has a trapezoidal column shape.

단락방지부는 원기둥 형상으로 이루어진다.The short circuit prevention part has a cylindrical shape.

단락방지부는 직경이 0.15mm이고, 반사부로부터 이격된 거리가 0.3mm인 위치에 마련되어 있다.The short circuit prevention portion is provided at a position of 0.15 mm in diameter and 0.3 mm of distance from the reflecting portion.

반사부는 원추형상으로 형성되어 있다.The reflecting portion is formed in a conical shape.

단락방지부는 와이어에 인접하게 설치된다.Short circuit protection is provided adjacent to the wire.

본 발명에 따른 발광소자 패키지는The light emitting device package according to the present invention

첫째, 단락방지부가 수지몰딩부의 탄성변형을 감소시킴으로써 와이어의 탄성변형을 줄여 와이어의 단락을 방지한다.First, the short-circuit prevention portion reduces the elastic deformation of the resin molding to reduce the elastic deformation of the wire to prevent short circuit of the wire.

둘째, 단락방지부는 와이어의 열응력을 감소시킨다.Secondly, the short circuit protection reduces the thermal stress of the wire.

셋째, 단락방지부에 의해 와이어의 탄성변형이 줄고, 와이어의 열응력이 감소함으로써 와이어의 직경을 줄일 수 있어 경제적이다.Third, the elastic deformation of the wire is reduced by the short circuit prevention portion, and the thermal stress of the wire is reduced, so that the diameter of the wire can be reduced and economical.

도 1은 본 발명에 따른 발광소자 패키지를 도시한 평면도.
도 2는 도 1에 도시된 I-I'를 따라 본 단면도.
도 3은 도 1에 도시된 단락방지부를 확대하여 도시한 사시도.
도 4는 단락방지부의 높이에 따른 와이어의 탄성변형률 변화를 도시한 그래프.
도 5는 단락방지부가 없는 종래의 구조에서 수지몰딩부의 탄성변형에 따른 와이어 각부분의 탄성변형을 도시한 결과도면.
도 6은 단락방지부를 구비하는 본발명에서 수지몰딩부의 탄성변형에 따른 와이어 각 부분의 탄성변형을 도시한 결과도면.
도 7은 원기둥형상인 단락방지부의 직경에 따른 와이어의 탄성변형 감소율을 도시한 그래프.
도 8은 원기둥형상인 단락방지부가 반사부로부터 이격된 거리에 따른 와이어의 탄성변형 감소율을 도시한 그래프.
도 9는 원기둥형상인 단락방지부의 직경에 따른 발광소자의 광속감소율변화를 도시한 그래프.
도 10은 원기둥형상인 단락방지부가 반사부로부터 이격된 거리에 따른 발광소자의 광속감소율변화를 도시한 그래프.1 is a plan view showing a light emitting device package according to the present invention.
FIG. 2 is a cross-sectional view taken along the line II ′ shown in FIG. 1; FIG.
Figure 3 is an enlarged perspective view of the short circuit prevention unit shown in FIG.
Figure 4 is a graph showing the elastic strain change of the wire according to the height of the short circuit prevention portion.
Figure 5 is a result of showing the elastic deformation of the respective wire portion according to the elastic deformation of the resin molding in the conventional structure without the short circuit protection.
Figure 6 is a view showing the elastic deformation of each portion of the wire according to the elastic deformation of the resin molding in the present invention having a short circuit prevention portion.
7 is a graph showing a rate of decrease of elastic deformation of a wire according to a diameter of a short circuit prevention part having a cylindrical shape.
FIG. 8 is a graph illustrating a decrease rate of elastic deformation of a wire according to a distance from a cylindrical short-circuit preventing portion from a reflecting portion. FIG.
9 is a graph showing a change in luminous flux reduction rate of a light emitting device according to a diameter of a short circuit prevention part having a cylindrical shape.
FIG. 10 is a graph illustrating a change in luminous flux reduction rate of a light emitting device according to a distance of a cylindrical short-circuit preventing portion from a reflecting portion. FIG.

이하, 첨부된 도면들을 참조하면서 본 발명의 바람직한 실시예를 상세히 설명하기로 한다. 그러나 아래에 예시되는 실시예는 본 발명의 범위를 한정하는 것이 아니며, 본 발명을 이 기술 분야에서 통상의 지식을 가진 자에게 충분히 설명하기 위해 제공되는 것이다. 이하의 도면들에서 동일한 참조부호는 동일한 구성요소를 지칭하며, 도면상에서 각 구성요소의 크기는 설명의 명료성과 편의상 과장되어 있을 수 있다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the embodiments illustrated below are not intended to limit the scope of the invention, but rather to provide a thorough understanding of the invention to those skilled in the art. In the following drawings, like reference numerals refer to like elements, and the size of each element in the drawings may be exaggerated for clarity and convenience of explanation.

도 1은 본 발명에 따른 발광소자 패키지를 도시한 평면도이고, 도 2는 도 1에 도시된 I-I'를 따라 본 단면도이고, 도 3은 도 1에 도시된 단락방지부를 확대하여 도시한 사시도이다.1 is a plan view illustrating a light emitting device package according to the present invention, FIG. 2 is a cross-sectional view taken along line II ′ of FIG. 1, and FIG. 3 is an enlarged perspective view of the short circuit prevention unit illustrated in FIG. 1. to be.

도 1 및 도 2를 참조하면, 본 발명에 따른 발광소자 패키지(100)는 상부몸체(111)와 하부몸체(112)로 구성된 몸체(110), 상부몸체(111)와 하부몸체(112)의 사이에 마련되며, 하부몸체(112)의 일부를 감싸도록 설치되는 복수의 리드 프레임(120)과, 복수의 리드프레임(120)중 어느 한쪽에 실장되어 광을 출사하는 발광소자(130), 발광소자(130)를 다른 리드프레임에 연결하는 와이어(150)와, 와이어(150)에 인접하게 마련되어 와이어의 단락을 방지하는 단락방지부(170)를 구비한다.1 and 2, the light emitting device package 100 according to the present invention includes a body 110 composed of an upper body 111 and a lower body 112, an upper body 111 and a lower body 112. A plurality of lead frames 120 provided between the plurality of lead frames 120 and installed to cover a portion of the lower body 112, and light emitting devices 130 mounted on any one of the plurality of lead frames 120 to emit light, and emit light. A wire 150 for connecting the element 130 to another lead frame and a short circuit prevention unit 170 provided adjacent to the wire 150 to prevent a short circuit of the wire are provided.

몸체(110)는 발광소자를 지지하며 보호하기 위한 것으로, 액정고분자수지(Liquid Cristal Polymer; LCP)와 같은 수지로 제작될 수 있다. 몸체(110)의 형상은 다양한 변용례가 가능하다.The body 110 is to support and protect the light emitting device, and may be made of a resin such as liquid crystal polymer (LCP). The shape of the body 110 may be various variations.

상부몸체(111)에는 상부에서 하부로 갈수록 지름이 작아지는 오목형상으로 관통되게 형성되어 그 내측에 위치하는 발광소자(130)로부터 출사되는 광을 상측으로 반사하는 반사부(113)가 마련되어 있다. 반사부(113)의 표면에는 반사율이 높은 은(Ag) 또는 알루미늄(Al)같은 물질이 도포되어 있어 발광소자(130)로부터 출사되는 광을 효과적으로 반사시킬 수 있다.The upper body 111 is provided with a reflecting portion 113 that is formed to penetrate in a concave shape that becomes smaller in diameter from the upper portion to the lower portion, and reflects the light emitted from the light emitting element 130 positioned therein to the upper side. A material such as silver (Ag) or aluminum (Al) having high reflectance may be coated on the surface of the reflector 113 to effectively reflect light emitted from the light emitting device 130.

반사부(113)에 의해 둘러싸이는 공간은 발광소자(130), 와이어(150) 및 단락방지부(170)를 덮어 외부로부터 보호하는 수지몰딩부(160)가 채워된다. 수지몰딩부(160)는 발광소자(130)로부터 출사된 광을 외부로 투과시키여 하므로 일반적으로 에폭시 수지 또는 실리콘 수지 등과 같은 투명수지로 형성될수 있다. 수지몰딩부(160)는 다층구조일 수 있으며, 렌즈형상으로 형성하여 렌즈역할을 할 수도 있다. The space surrounded by the reflector 113 is filled with the resin molding 160 to cover the light emitting device 130, the wire 150, and the short circuit prevention unit 170 to protect it from the outside. Since the resin molding unit 160 transmits light emitted from the light emitting device 130 to the outside, the resin molding unit 160 may be generally formed of a transparent resin such as an epoxy resin or a silicone resin. The resin molding unit 160 may have a multi-layer structure, and may form a lens to serve as a lens.

아울러, 수지몰딩부(160)는 발광소자(130)로부터 출사된 광을 산란에 의해 확산시킴으로써 균일하게 발광시키는 확산제(미도시)가 더 포함될 수 있다. 확산제로는 티탄산바륨, 산화티탄, 산화알루미늄 등이 사용될 수 있다. 또한, 수지몰딩부(160)의 내부에는 형광체(미도시)를 더 포함할 수 있다. 형광체는 발광소자(130)로부터 출사된 광의 일부를 흡수하여 흡수된 광과 상이한 파장의 광을 방출하는 것으로, 임자결정의 적절한 위치에 불순물이 혼입된 활성이온으로 구성될 수 있다.In addition, the resin molding part 160 may further include a diffusion agent (not shown) for uniformly emitting light by diffusing the light emitted from the light emitting device 130 by scattering. As the diffusion agent, barium titanate, titanium oxide, aluminum oxide, or the like can be used. In addition, the resin molding part 160 may further include a phosphor (not shown). The phosphor absorbs a part of the light emitted from the light emitting device 130 and emits light having a wavelength different from that of the absorbed light. The phosphor may be composed of active ions in which impurities are incorporated at appropriate positions of the crystal.

몸체(110)는 상부몸체(111)와 하부몸체(112)로 구성되어 있는 것으로 개시되어 있지만, 상부몸체(111)와 하부몸체(112)가 일체로 구성할 수 있다.The body 110 is disclosed as being composed of the upper body 111 and the lower body 112, the upper body 111 and the lower body 112 may be configured integrally.

리드프레임(120)은 와이어(150)를 통해 발광소자(130)에 외부전원을 인가하기 위한 것으로, 제1 리드프레임(121)과 제2 리드프레임(122)으로 구성된다. 제1 리드프레임(121)과 제2 리드프레임(122)은 일측이 상부몸체(111)와 하부몸체(112)의 사이에 삽입되어 있으며, 그 타측은 하부몸체(112)를 감싸도록 형성된다. 제1 리드프레임(121)과 제2 리드프레임(122)의 마주보는 일측은 서로 소정간격 이격되어 있다.The lead frame 120 is for applying external power to the light emitting device 130 through the wire 150, and is composed of a first lead frame 121 and a second lead frame 122. One side of the first lead frame 121 and the second lead frame 122 is inserted between the upper body 111 and the lower body 112, the other side is formed to surround the lower body 112. The opposite sides of the first lead frame 121 and the second lead frame 122 are spaced apart from each other by a predetermined distance.

발광소자(130)는 p-n접합구조를 가지는 화합물 반도체 적층구조로서 소수 캐리어(전자 또는 정공)들이 재결합에 의하여 발광되는 현상을 이용하는 것으로, 본드(140)를 이용하여 제2 리드프레임(122)의 상면에 부착되어 있다. 물론, 발광소자(130)는 제1 리드프레임(121)에 부착될 수도 있다. 발광소자(130)는 도면에 개시되어 있지는 않지만 상부와 하부에 P형 전극 또는 N형 전극이 배치되어 있으며, P형 전극 또는 N형 전극은 제2 리드프레임(122)에 부착되어 있고, 다른 전극은 와이어(150)에 의하여 제1 리드프레임(121)에 연결될 수 있다. 아울러, 발광소자(130)는 제1 리드프레임(121)에 연결될 수 있고, 와이어(150)에 의하여 제2 리드프레임(122)에 연결될 수 있다. 발광소자(130)는 수직형 뿐만 아니라 수평형이 사용될 수 있다.The light emitting device 130 is a compound semiconductor stacked structure having a pn junction structure and uses a phenomenon in which minority carriers (electrons or holes) are emitted by recombination, and the upper surface of the second lead frame 122 using the bond 140. Attached to the Of course, the light emitting device 130 may be attached to the first lead frame 121. Although the light emitting device 130 is not shown in the drawing, a P-type electrode or an N-type electrode is disposed on the upper and lower portions thereof, and the P-type electrode or the N-type electrode is attached to the second lead frame 122 and the other electrode. The silver wire 150 may be connected to the first leadframe 121. In addition, the light emitting device 130 may be connected to the first lead frame 121 and may be connected to the second lead frame 122 by a wire 150. The light emitting device 130 may be a horizontal type as well as a vertical type.

와이어(150)는 발광소자(130)와 제1 리드프레임(121)을 연결하기 위한 것으로, 접합공정을 통해 금(Au) 또는 알루미늄(Al)으로 형성될 수 있다. 만약, 발광소자(130)가 수평형인 경우에는 제1 리드프레임(121)과 제2 리드프레임(122)을 연결하기 위하여 2개의 와이어가 사용될 수 있다.The wire 150 is for connecting the light emitting device 130 and the first lead frame 121 and may be formed of gold (Au) or aluminum (Al) through a bonding process. If the light emitting device 130 is horizontal, two wires may be used to connect the first lead frame 121 and the second lead frame 122.

단락방지부(170)는 수지몰딩부(160)가 주변온도에 따라 팽창 및 수축하면서 그 탄성변형률이 변화될 때 수지몰딩부(160)에 덮여 있는 와이어(150)도 수지몰딩부(160)의 팽창 및 수축의 영향을 받아 지속적인 응력을 받음으로써 결국에는 와이어(150)가 단락되는 것을 방지하기 위한 것으로, 하부몸체(112)로부터 상측으로 소정높이 연장되도록 돌출되게 마련되어 있다. The short-circuit prevention part 170 is formed of the resin molding part 160 even when the resin molding part 160 expands and contracts according to the ambient temperature and its elastic strain is changed. In order to prevent the wire 150 from short-circuit after being subjected to continuous stress under the influence of expansion and contraction, it is provided to protrude so as to extend a predetermined height upward from the lower body 112.

단락방지부(170)는 와이어(150)의 하부몸체(112)의 상측면로부터의 돌출된 높이보다도 더 높으며, 수지몰딩부(160)의 높이보다는 낮게 마련되어 수지몰딩부(160)에 덮여 있다. The short circuit prevention unit 170 is higher than the height protruding from the upper surface of the lower body 112 of the wire 150 and is provided lower than the height of the resin molding unit 160 and is covered by the resin molding unit 160.

단락방지부(170)는 도 3에 도시된 바와 같이 일측면(171)은 하부몸체(112)와 수직을 이루지만, 타측면(172)은 하부몸체(112)와 예각범위로 경사지게 마련된 사다리꼴 기둥형상으로 형성되어 있다. 다만, 단락방지부(170)의 형상은 도 3에 도시된 사다리꼴 기둥형상에 한정되지 않으며, 다양한 형상, 예를 들어 원기둥형상 등으로 형성될 수 있다. As shown in FIG. 3, the short-circuit preventing unit 170 has one side surface 171 perpendicular to the lower body 112, but the other side surface 172 is inclined to the lower body 112 at an acute angle. It is formed in a shape. However, the shape of the short circuit prevention unit 170 is not limited to the trapezoidal pillar shape shown in FIG. 3, and may be formed in various shapes, for example, a cylindrical shape.

단락방지부(170)는 하부몸체(112)로부터 돌출되어 있으며, 제작의 편리성을 위하여 하부몸체(112)와 일체로 형성되므로 하부몸체(112)와 동일재질로 형성될 수 있다. 따라서, 단락방지부(170)는 수지몰딩부(160)와는 다른 재질로 수지몰딩부(160)와 상이한 탄성변형율을 가지므로 수지몰딩부(160)의 팽창 및 수축이 와이어(150)에 영향을 미치는 것을 방지할 수 있다.The short circuit prevention unit 170 protrudes from the lower body 112, and may be formed of the same material as the lower body 112 because the lower body 112 is integrally formed with the lower body 112. Therefore, since the short circuit prevention unit 170 has a different elastic deformation rate from that of the resin molding unit 160 because it is different from the resin molding unit 160, the expansion and contraction of the resin molding unit 160 affects the wire 150. You can prevent it from spreading.

도 4는 단락방지부의 높이에 따른 와이어의 탄성변형률 변화를 도시한 그래프이다.4 is a graph showing a change in elastic strain of the wire according to the height of the short circuit prevention portion.

도 4를 참조하면, 단락방지부(170)의 높이가 높아질수록 와이어(150)의 탄성변형률(volume averaged plastic strain)이 감소하는 것을 알 수 있다. 즉, 단락방지부(170)의 높이가 높을수록 수지몰딩부(160)의 수축 및 팽창(탄성변형)이 와이어(150)에 전달되는 것을 단락방지부(170)가 막음으로써 와이어(150)의 탄성변형률을 감소시키는 것이다. Referring to FIG. 4, it can be seen that as the height of the short circuit prevention unit 170 increases, the volume averaged plastic strain of the wire 150 decreases. That is, as the height of the short circuit prevention unit 170 increases, the short circuit prevention unit 170 prevents the contraction and expansion (elastic deformation) of the resin molding unit 160 from being transmitted to the wire 150. It is to reduce the elastic strain.

도 5는 단락방지부가 없는 종래의 구조에서 수지몰딩부의 탄성변형에 따른 와이어 각부분의 탄성변형을 도시한 결과도면이고, 도 6은 단락방지부를 구비하는 본발명에서 수지몰딩부의 탄성변형에 따른 와이어 각 부분의 탄성변형을 도시한 결과도면이다.Figure 5 is a result of showing the elastic deformation of each portion of the wire according to the elastic deformation of the resin molding in the conventional structure without the short circuit prevention portion, Figure 6 is a wire according to the elastic deformation of the resin molding in the present invention having a short circuit prevention portion It is a result drawing which shows the elastic deformation of each part.

도 5 및 도 6을 참조하면, 와이어의 탄성변형량의 누적량은 와이어의 수명과 직접적으로 관련된 수치로써 적으면 적을수록 와이어의 수명이 길어진다. 온도 22도(섭씨온도)에서 영하 45도(섭씨온도)로 내려갔을 때, 볼(Ball; 와이어의 연결부), Heat Affected Zone(HAZ) 및 와이어의 나머지 부분에서의 열응력에 의한 탄성변형량을 종래와 비교하였다. 도면에 개시된 바와 같이, 최대 탄성변형량이 감소함을 볼 수 있다. HAZ영역에서 0.0377에서 0.035로 감소한다. 뿐만 아니라, 볼 및 와이어 나머지 부분에서 탄성 변형량이 덜 누적된다. 본 발명에 따른 발광소자의 와이어의 볼에서의 탄성 변형량이 28%, HAZ에서 7% 및 와이어의 나머지 부분에서는 15% 감소한다. 상기와 같은 결과는 본 발명에 따른 단락방지부(170)가 수지몰딩부(160)의 탄성변형이 와이어(150)에 미치는 영향을 감소시킴으로써 발생된 것이다.5 and 6, the cumulative amount of elastic deformation of the wire is a value directly related to the life of the wire, and the smaller the length, the longer the life of the wire. When the temperature drops from 22 degrees Celsius to 45 degrees Celsius, the elastic deformation due to thermal stress in the ball, the heat affected zone (HAZ) and the rest of the wire is known. Compared with. As disclosed in the figure, it can be seen that the maximum elastic strain decreases. Decreases from 0.0377 to 0.035 in the HAZ region. In addition, less elastic strain accumulates in the rest of the ball and wire. The elastic deformation amount in the ball of the wire of the light emitting device according to the present invention is reduced by 28%, 7% in HAZ and 15% in the rest of the wire. The above result is generated by reducing the effect of the elastic deformation of the resin molding part 160 on the wire 150 of the short circuit prevention part 170 according to the present invention.

도 7은 원기둥형상인 단락방지부의 직경에 따른 와이어의 탄성변형 감소율을 도시한 그래프이고, 도 8은 원기둥형상인 단락방지부가 반사부로부터 이격된 거리에 따른 와이어의 탄성변형 감소율을 도시한 그래프이다.FIG. 7 is a graph illustrating a reduction rate of elastic deformation of a wire according to a diameter of a short circuit prevention portion having a cylindrical shape, and FIG. 8 is a graph illustrating a reduction rate of elastic deformation of a wire according to a distance spaced from a reflective portion of a cylindrical short circuit prevention portion. .

도 1 내지 도 3에서는 단락방지부의 형상이 사다리꼴 기둥형상으로 도시되어 있지만, 다양한 변용례가 가능하므로 원기둥형상인 경우을 적용하였다.In Figures 1 to 3, although the shape of the short-circuit prevention portion is shown as a trapezoidal columnar shape, various modifications are possible, so that the case of the columnar shape is applied.

도 7 및 도 8을 참조하면, 단락방지부의 직경이 클수록 와이어의 탄성변형량이 감소한다는 것을 알 수 있다. 또한, 단락방지부가 반사부로부터 이격된 거리는 하부몸체와 접촉하고 있는 반사부의 하면 가장자리로부터 이격된 최단거리를 의미한다. 단락방지부가 와이어에 가까울수록, 즉 반사부로부터 멀어질수록 와이어의 탄성변형량이 감소한다는 것을 알 수 있다.7 and 8, it can be seen that the elastic deformation amount of the wire decreases as the diameter of the short circuit prevention part increases. In addition, the distance from which the short-circuit prevention portion is spaced from the reflecting portion means the shortest distance spaced from an edge of the lower surface of the reflecting portion in contact with the lower body. It can be seen that the elastic deformation amount of the wire decreases as the short-circuit prevention portion approaches the wire, that is, away from the reflecting portion.

즉, 단락방지부는 그 직경이 크고, 와이어에 가까울수록 그 탄성변형량이 작다는 것을 알 수 있다. 이는 단락방지부가 수지몰딩부의 탄성변형을 줄이는 효과가 있으므로, 수지몰딩부의 탄성변형이 와이어에 미치는 영향을 감소시킴으로써 얻어지는 결과라 할 수 있다.That is, it can be seen that the short-circuit prevention part has a large diameter and the elastic deformation amount is smaller as it is closer to the wire. This is because the short-circuit prevention portion has the effect of reducing the elastic deformation of the resin molding portion, it can be said that the result obtained by reducing the effect of the elastic deformation of the resin molding portion on the wire.

도 9는 원기둥형상인 단락방지부의 직경에 따른 발광소자의 광속감소율변화를 도시한 그래프이고, 도 10은 원기둥형상인 단락방지부가 반사부로부터 이격된 거리에 따른 발광소자의 광속감소율변화를 도시한 그래프이다.9 is a graph showing the change in the luminous flux reduction rate of the light emitting device according to the diameter of the short circuit prevention portion having a cylindrical shape, and FIG. 10 is a change in the luminous flux reduction rate of the light emitting device according to the distance away from the reflecting portion the cylindrical short circuit prevention portion. It is a graph.

도 9 및 도 10을 참조하면, 단락방지부가 발광소자에 인접하게 설치되면, 발광소자로부터 출사된 광속에 영향을 미치게 된다. 그러므로, 와이어의 탄성변형을 최소화 함과 동시에 발광소자로부터 출사된 광속의 감소를 최소화할 수 있도록 단락방지부의 직경 및 그 위치를 선정할 필요가 있다.9 and 10, when the short circuit prevention unit is installed adjacent to the light emitting device, the luminous flux emitted from the light emitting device is affected. Therefore, it is necessary to select the diameter and the position of the short circuit prevention portion to minimize the elastic deformation of the wire and at the same time minimize the reduction of the luminous flux emitted from the light emitting device.

아울러, 발광소자로부터 출사된 광속의 감소를 최소화하기 위하여 단락방지부의 표면에 광을 반사하는 물질을 도포할 수 있다. 반사물질로는 은(Ag) 또는 알루미늄(Al)이 사용될 수 있다.In addition, in order to minimize the reduction of the luminous flux emitted from the light emitting device, a material reflecting light may be applied to the surface of the short circuit prevention portion. Silver (Ag) or aluminum (Al) may be used as the reflective material.

예를 들어, 원기둥형상의 단락방지부의 직경이 0.15mm이고, 반사부로부터 이격거리가 0.3mm이면서 은(Ag)으로 그 표면이 도포되어 있는 경우, 광속저하는 약 1.6%에 불과하였다.For example, when the diameter of the cylindrical short circuit prevention portion was 0.15 mm, and the surface was coated with silver (Ag) while the separation distance from the reflecting portion was 0.3 mm, the luminous flux was only about 1.6%.

전술한 본 발명인 발광소자 패키지는 이해를 돕기 위하여 도면에 도시된 실시예를 참고로 설명되었으나, 이는 예시적인 것에 불과하며, 당해 분야에서 통상적 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 타 실시예가 가능하다는 점을 이해할 것이다. 따라서, 본 발명의 진정한 기술적 보호 범위는 첨부된 특허청구범위에 의해 정해져야 할 것이다.The above-described light emitting device package of the present invention has been described with reference to the embodiment shown in the drawings for clarity, but this is only an example, and those skilled in the art may have various modifications and equivalent embodiments therefrom. I understand that it is possible. Accordingly, the true scope of the present invention should be determined by the appended claims.

100---발광소자 패키지 110---몸체
111---상부몸체 112---하부몸체
113---반사부
120---리드프레임 121---제1 리드프레임
122---제2 리드프레임 130---발광소자
140---본딩 150---와이어
160---수지몰딩부 170---단락방지부100 --- light emitting package 110 --- body
111 --- Upper Body 112 --- Lower Body
113 --- Reflection
120 --- Leadframe 121 --- First Leadframe
122 --- second leadframe 130 --- light emitting device
140 --- bonding 150 --- wire
160 --- resin molding part 170 --- short circuit prevention part

Claims (11)

오목형상으로 반사부가 형성된 상부몸체와, 상기 상부몸체의 하측에 마련된 하부몸체를 구비하는 몸체;
상기 상부몸체와 하부몸체의 사이에 마련되며, 서로 소정간격 이격되어 있는 복수의 리드프레임;
상기 복수의 리드 프레임 중 어느 하나의 리드 프레임 상에 설치되어 광을 출사하는 발광소자;
상기 발광소자와 나머지 리드 프레임을 연결하는 와이어;
상기 발광소자와 리드프레임을 둘러싸는 수지몰딩부;와,
상기 수지몰딩부의 탄성변형을 줄여주는 단락방지부;를 구비하는 발광소자 패키지.A body having an upper body having a concave reflection portion and a lower body provided below the upper body;
A plurality of lead frames provided between the upper body and the lower body and spaced apart from each other by a predetermined distance;
A light emitting element disposed on any one of the plurality of lead frames to emit light;
A wire connecting the light emitting element to the remaining lead frame;
A resin molding part surrounding the light emitting element and the lead frame;
Light emitting device package comprising a; short-circuit prevention portion to reduce the elastic deformation of the resin molding. 제 1항에 있어서,
상기 단락방지부는
상기 하부몸체로부터 상측으로 소정길이 돌출되도록 마련되어 있는 발광소자 패키지.The method of claim 1,
The short circuit prevention unit
The light emitting device package is provided to protrude a predetermined length upward from the lower body. 제 2항에 있어서,
상기 단락방지부는 상기 하부몸체와 동일한 재질로 형성되는 발광소자 패키지.The method of claim 2,
The short circuit prevention unit is a light emitting device package formed of the same material as the lower body. 제 2에 있어서,
상기 단락방지부는 상기 와이어의 높이보다도 더 높게 돌출되어 있는 발광소자 패키지.In the second,
The short circuit prevention portion protrudes higher than the height of the wire package. 제 1항에 있어서,
상기 단락방지부의 표면에는 광을 반사하는 반사물질이 도포되어 있는 발광소자 패키지.The method of claim 1,
The light emitting device package is coated with a reflective material that reflects light on the surface of the short circuit prevention portion. 제 5항에 있어서,
상기 반사물질은 은(Ag) 및 알루미늄(Al) 중 어느 하나인 발광소자 패키지.6. The method of claim 5,
The reflective material is any one of silver (Ag) and aluminum (Al) package. 제 1항에 있어서,
상기 단락방지부는 사다리꼴 기둥형상으로 이루어진 발광소자 패키지.The method of claim 1,
The short circuit prevention portion is a light emitting device package consisting of a trapezoidal columnar shape. 제 1항에 있어서,
상기 단락방지부는 원기둥 형상으로 이루어진 발광소자 패키지.The method of claim 1,
The short circuit prevention unit is a light emitting device package having a cylindrical shape. 제 8항에 있어서,
상기 단락방지부는 직경이 0.15mm이고, 상기 반사부로부터 이격된 거리가 0.3mm인 위치에 마련되어 있는 발광소자 패키지.The method of claim 8,
The short circuit prevention portion is 0.15mm in diameter, the light emitting device package is provided at a position spaced 0.3mm away from the reflecting portion. 제 1항에 있어서,
상기 반사부는 원추형상으로 형성되어 있는 발광소자 패키지.The method of claim 1,
The reflector is a light emitting device package is formed in a conical shape. 제 1항에 있어서,
상기 단락방지부는 상기 와이어에 인접하게 설치되어 있는 발광소자 패키지.
The method of claim 1,
The short-circuit prevention portion is a light emitting device package is installed adjacent to the wire.
KR1020110027022A 2011-03-25 2011-03-25 Light emitting device package KR20120108749A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019117905A (en) * 2017-12-27 2019-07-18 ローム株式会社 Semiconductor light-emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019117905A (en) * 2017-12-27 2019-07-18 ローム株式会社 Semiconductor light-emitting device

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