CN111048647B - Light emitting device - Google Patents
Light emitting device Download PDFInfo
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- CN111048647B CN111048647B CN201911344520.3A CN201911344520A CN111048647B CN 111048647 B CN111048647 B CN 111048647B CN 201911344520 A CN201911344520 A CN 201911344520A CN 111048647 B CN111048647 B CN 111048647B
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- encapsulant
- emitting chip
- light
- emitting device
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- 239000008393 encapsulating agent Substances 0.000 claims abstract description 124
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 239000000463 material Substances 0.000 claims description 14
- 238000000605 extraction Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000004593 Epoxy Substances 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to a light emitting device. A light emitting device according to an embodiment of the present invention includes a mounting substrate; a light emitting chip mounted on the mounting substrate and emitting ultraviolet rays; a first encapsulant covering at least a portion of a side surface of the light emitting chip, the outer surface being configured as a curved surface; and a reflective frame formed on an upper surface of the mounting substrate and along an outer side of the first encapsulant, wherein a portion of light emitted from the light emitting chip is refracted at an outer surface of the first encapsulant to be directed toward an upper direction of the light emitting chip, and another portion of light emitted from the light emitting chip is reflected at an inner wall of the reflective frame to be directed toward the upper direction of the light emitting chip.
Description
The application is a divisional application of patent application with the application date of 2019, 1 month and 8 days, the application number of 201980000924.2 and the title of light-emitting device.
Technical Field
The present invention relates to a light emitting device.
Background
When a current is applied to a Light Emitting Diode (LED), light of various wavelengths generated by recombination of electrons and holes is emitted from the junction of the p-type and n-type semiconductors. Light emitting diodes have various advantages such as long life, low power supply, and excellent driving characteristics, as compared with filaments used in conventional light emitting devices, and thus demand for the same is continuously increasing.
A light emitting diode (hereinafter referred to as a light emitting chip) of a chip unit is packaged with an encapsulant functioning as a phosphor and a lens and applied to a light emitting device. Light emitted from the light emitting chip passes through the encapsulant and is emitted to the outside. At this time, in the case where the light emitted from the light emitting chip is ultraviolet rays, the encapsulant may be cured by the ultraviolet rays. If the encapsulant is cured by ultraviolet rays, cracks may occur in portions that exhibit weak physical properties or relatively strong stress. If a crack occurs in the encapsulant, a problem arises in that the reliability of the light emitting device is lowered.
Disclosure of Invention
Technical problem
The invention provides a light emitting device capable of preventing crack of an encapsulant of a light emitting chip and improving reliability.
Another object of the present invention is to provide a light emitting device capable of improving light extraction efficiency.
Technical proposal
A light emitting device according to an embodiment of the present invention includes a mounting substrate, a light emitting chip, and a first encapsulant. The light emitting chip is mounted on the mounting substrate and emits ultraviolet rays. And, the first encapsulant covers at least a portion of a side surface of the light emitting chip. At this time, the outer surface of the first encapsulant is configured as a curved surface.
Advantageous effects
The light emitting device according to the embodiment of the present invention forms the encapsulant at the portion of the light emitting chip except for the top surface vertex, thereby preventing the occurrence of cracks of the encapsulant near the top of the light emitting chip to improve reliability.
Also, the light emitting device according to the embodiment of the present invention forms the outer surface of the encapsulant through which the ultraviolet rays of the light emitting chip pass to have curvature, thereby improving light extraction efficiency.
Also, the light emitting device according to the embodiment of the present invention forms the encapsulant on only a portion of the side and upper surfaces of the light emitting chip, so that the cost can be reduced.
Drawings
Fig. 1 and 2 are schematic views showing a light emitting device according to a first embodiment of the present invention.
Fig. 3 is a schematic view showing cracks generated in an encapsulant of a conventional light-emitting device.
Fig. 4 and 5 are diagrams showing light output of a light emitting device according to the structure of an encapsulant.
Fig. 6 and 7 are schematic views showing a light emitting device according to a second embodiment of the present invention.
Fig. 8 and 9 are schematic views showing a light emitting device according to a third embodiment of the present invention.
Fig. 10 is a schematic view showing a light emitting device according to a fourth embodiment of the present invention.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments described below are provided as examples in order to fully convey the concept of the invention to those skilled in the art. Therefore, the present invention is not limited to the embodiments described below, and may be embodied in other forms. In the drawings, the widths, lengths, thicknesses, and the like of the constituent elements may be exaggerated for convenience of explanation. Throughout the specification, like reference numerals designate like components, and like reference numerals designate like components.
According to an embodiment of the invention, a light emitting device includes a mounting substrate, a light emitting chip, and a first encapsulant. The light emitting chip is mounted on the mounting substrate and emits ultraviolet rays. And, the first encapsulant covers at least a portion of a side surface of the light emitting chip. At this time, the outer surface of the first encapsulant is configured as a curved surface.
The light-emitting chip is bonded to the mounting substrate in a manner of inverted chip mounting.
As another embodiment, the light emitting device may further include: the sub-mounting substrate is mounted on the mounting substrate and is electrically connected with the mounting substrate. At this time, the light emitting chip is mounted on the sub-mount substrate, and is further flip-chip bonded to the sub-mount substrate.
The sub-mount substrate may be bonded to the mount substrate with the chip inverted. Or the sub-mount substrate may be wire-bonded to the mount substrate.
The leads are located at a lower level than an upper surface of the light emitting chip.
The first encapsulant is formed to cover the leads.
The first encapsulant may be formed using epoxy or silicone.
The thickness of the first encapsulant on the side surface of the light emitting chip is thicker from the upper portion toward the lower portion.
Light emitted from the side surface of the light emitting chip and incident to the first encapsulant is refracted at the outer surface of the first encapsulant to be directed toward the upper direction of the light emitting chip.
As still another embodiment, the light emitting device may further include: and a second encapsulant covering the upper surface of the light emitting chip.
The second encapsulant is formed so as not to cover an apex of an upper surface of the light emitting chip.
The second encapsulant may be formed using an epoxy or silicone.
As still another embodiment, the light emitting device may further include: and a reflective frame formed on the upper surface of the mounting substrate and along the outer side of the first encapsulant.
Light emitted from the light emitting chip toward the reflection frame is reflected at an inner wall of the reflection frame to be directed toward an upper direction of the light emitting chip.
The inner wall of the reflection frame may have a slope.
For example, the distance between the inner walls of the reflection frame facing each other in the upward direction from the mounting substrate is larger.
An upper surface of the reflection frame is disposed higher than an upper surface of the light emitting chip.
Hereinafter, a specific description will be given with reference to the drawings.
Fig. 1 and 2 are schematic views showing a light emitting device according to a first embodiment of the present invention.
Fig. 1 is a perspective view of a light emitting device 100 according to a first embodiment, and fig. 2 is a cross-sectional view (A1-A2) of the light emitting device 100 according to the first embodiment.
Referring to fig. 1 and 2, a light emitting device 100 according to a first embodiment includes a mounting substrate 110, a light emitting chip 120, and a first encapsulant 130.
The mounting substrate 110 is not shown in detail, but is made of an insulating material and a conductive material. The conductive material constitutes a circuit pattern electrically connected to the light emitting chip 120. And, an insulating substance is located between the circuit patterns to insulate the circuit patterns.
For example, the mounting substrate 110 may be a metal substrate composed of a plurality of lead frames 111 and an insulating substance 112 surrounding the lead frames 111. Although not shown in fig. 1, a part of the lead frame 111 is exposed to the outside through the side and lower surfaces of the mounting substrate 110. The exposed portions of the lead frame 111 serve to electrically connect with other external components. Alternatively, the mounting substrate 110 may be a circuit substrate including at least one insulating layer and a circuit pattern layer.
The light emitting chip 120 is mounted on the mounting substrate 110. The light emitting chip 120 is a light emitting diode chip that emits ultraviolet rays.
The light emitting chip 120 has a structure in which an n-type first conductivity type semiconductor layer, a p-type second conductivity type semiconductor layer, and an active layer are stacked. At this time, the active layer is located between the first conductive type semiconductor layer and the second conductive type semiconductor layer. The first electrode connected to the first conductive type semiconductor layer and the second electrode connected to the second conductive type semiconductor layer are both located at the lower portion of the light emitting chip 120. Therefore, the light emitting chip 120 is mounted and connected to the mounting substrate 110 by flip chip bonding (Flip chip bonding).
The light emitting chip 120 generates ultraviolet rays in the active layer. The generated ultraviolet rays are emitted to the outside through the upper surface and the side surfaces of the light emitting chip 120.
As shown in fig. 1, the first encapsulant 130 is formed to surround the sides of the light emitting chip 120. For example, the first encapsulant 130 may be formed using epoxy or silicone. The thickness of the first encapsulant 130 at the side of the light emitting chip 120 is thicker from the upper portion toward the lower portion. The case where the lower surface profile of the first encapsulant 130 is a quadrangular structure is illustrated in fig. 1. However, the first encapsulant 130 may be formed such that the lower surface profile has various structures such as a circle, an ellipse, or a quadrangle with corners curved.
In one embodiment of the prior art, an encapsulant functioning as a lens is formed to cover the side and upper surfaces of the light emitting chip. The encapsulant may also cause cracking due to discoloration or weak curing of ultraviolet rays emitted from the light emitting chip. In particular, stress concentration (Stress concentration) occurs in a portion of the encapsulant covering the vertex portion of the light emitting chip. Stress concentration is a phenomenon in which stress is concentrated on a local portion such as a corner portion or a portion where a cross section of an object abruptly changes. Therefore, when the encapsulant is cured by ultraviolet rays, stress concentration is most likely to occur near the vertex of the light emitting chip. Therefore, as shown in fig. 3, the encapsulant 10 is cured by ultraviolet rays emitted from the light emitting chip 20, and cracks are generated in a portion covering the top of the light emitting chip. Since the lower surface of the light emitting chip is not covered by the encapsulant and is in contact with the substrate, the most likely place for the encapsulant to crack is near the vertex of the upper surface of the light emitting chip. Cracks of the encapsulant, which occur near the top of the light emitting chip, may then spread out to the entire encapsulant.
In order to solve the problem of cracks occurring at the top of the light emitting chip, a case having a cavity formed therein and a transparent window have been used. That is, in the light emitting device according to the other embodiment of the related art, after the light emitting chip is mounted in the cavity of the case, the cavity is covered with the transparent window. But may lower the adhesive force of the adhesive between the case and the transparent window due to heat generation of the light emitting chip. And, the heat generation of the light emitting chip may cause the temperature of the air inside the chamber to rise. At this time, an additional air discharge path must be formed at the case in order to discharge the higher temperature inside air. In addition, quartz, which is a relatively expensive material, is used as the transparent window, and a structure for installing the transparent window must be formed in the case. Such a conventional light emitting device according to another embodiment for solving the problem of cracking of the encapsulant according to the conventional embodiment is costly and complicated in process due to the air discharge path and the transparent window.
In the present embodiment, the first encapsulant 130 is formed not to cover the upper surface of the light emitting chip 120 but to surround only the side surfaces of the light emitting chip 120. That is, the first encapsulant 130 does not surround the top of the upper surface of the light emitting chip 120, and thus a crack problem does not occur at the top of the light emitting chip 120.
In the embodiment of the present invention, no additional constituent part is disposed at the upper portion of the light emitting chip 120. Accordingly, the ultraviolet rays emitted through the upper surface of the light emitting chip 120 are directly transmitted in the upper direction of the light emitting device 100.
Ultraviolet rays emitted through the side of the light emitting chip 120 pass through the first encapsulant 130. According to an embodiment of the present invention, the outer face of the first encapsulant 130 is configured as a curved face. At this time, the ultraviolet rays passing through the first encapsulant 130 are refracted outside the first encapsulant 130. Accordingly, the propagation direction of the ultraviolet rays passing through the first encapsulant 130 may be determined according to the curvature of the outer surface of the first encapsulant 130.
The refractive power for refracting ultraviolet rays varies according to the curvature of the outer surface of the first encapsulant 130. Accordingly, the ultraviolet irradiation range and the ultraviolet extraction efficiency of the light emitting device 100 can be controlled by decreasing or increasing the curvature of the outer surface of the first encapsulant 130.
The curvature of the first encapsulant 130 may be controlled according to the amount of material and viscosity of the coating when forming the first encapsulant 130.
Since the light emitting device 100 according to the embodiment of the present invention is not formed to surround the entire light emitting chip 120 but is formed to surround the side of the light emitting chip 120, material costs are saved. Also, the light emitting device 100 can cause the ultraviolet rays emitted from the side of the light emitting chip 120 to also face in the upper direction of the light emitting device 100 through the first encapsulant 130, thus improving light extraction efficiency.
The material of the first encapsulant 130, such as epoxy or silicone, may be coated on the side of the light emitting chip 120 or the upper surface of the mounting substrate 110 by a dotting (dotting) method. For example, by finely adjusting the amount of material of the first encapsulant 130 discharged by the ejector (injector) of the piezoelectric element type, the volume of the first encapsulant 130, the curvature of the outer surface, and the like can be precisely controlled.
At this time, the material is coated so as to flow down toward the upper surface of the mounting substrate 110 through the side of the light emitting chip 120 or is coated on the upper surface of the mounting substrate 110 along the circumference of the light emitting chip 120. The first encapsulant 130 thus coated covers the side surface of the light emitting chip 120 as shown in fig. 2 by surface tension, but is constructed in a structure in which the outer surface has curvature.
The present embodiment is illustrated in the case where the first encapsulant 130 is formed using a dotting manner. However, the manner of forming the first encapsulant 130 is not limited thereto. The first encapsulant 130 may be formed in any manner as long as it can be formed to cover the sides of the light emitting chip 120 except for the top surface vertex and the outer surface has curvature.
The light emitting device 100 thus formed can solve the crack of the first encapsulant 130 occurring near the top surface vertex of the light emitting chip 120 through a simple process and without increasing additional costs. Also, the light emitting device 100 can prevent the occurrence of cracks of the first encapsulant 130 while saving material costs and improving light extraction efficiency.
In the following description of the embodiments, the description of the same configuration as that of the above embodiments will be omitted. Therefore, the description is omitted with reference to the description of the light emitting device of the above embodiment.
Fig. 4 and 5 are diagrams showing light output of a light emitting device according to the structure of an encapsulant.
Referring to fig. 4, the first encapsulant 130 of the light emitting device 100 forms a first structure 131, a second structure 132, a third structure 133, and a fourth structure according to the amount of material applied to the light emitting chip 120 and the mounting substrate 110. The amount of material coated by the first encapsulant 130 gradually decreases from the first structure 131 to the third structure 133. Accordingly, from the first structure 131 to the third structure 133, the angle (θ) of the first encapsulant 130 to the upper surface of the mounting substrate 110 becomes gradually larger. In addition, the fourth structure is to omit the first encapsulant 130 in the light emitting device 100.
Fig. 5 is a graph showing the light output results of the encapsulant of each structure shown in fig. 4 by ratio. Referring to fig. 5, the light output of the light emitting device 100 will omit the fourth structure of the first encapsulant 130 by 100%. At this time, when the first encapsulant 130 is the first structure 131, the light output is 106%, when the second structure 132, the light output is 108%, and when the third structure 133, the light output is 111%. The light emitting device 100 according to each of the first structure 131 to the third structure 133 of the first encapsulant 130 improves light output compared to the (fourth structure) light emitting device 100 in which the first encapsulant 130 is omitted. The light output ratio is the third structure 133, the second structure 132, and the first structure 131 in this order. That is, the greater the angle (θ) between the outer surface of the first encapsulant 130 and the upper surface of the mounting substrate 110, the higher the light output.
As such, the light output of the light emitting device 100 may be adjusted according to the structure of the first encapsulant 130. Also, the structure of the first encapsulant 130 may be adjusted according to the amount of material of the first encapsulant 130.
Fig. 6 and 7 are schematic views showing a light emitting device according to a second embodiment of the present invention.
Fig. 6 is a plan view of a light emitting device 200 according to a second embodiment of the present invention, and fig. 7 is a cross-sectional view (B1-B2) of the light emitting device 200 according to the second embodiment.
Referring to fig. 6, the light emitting device 200 according to the second embodiment includes a mounting substrate 110, a light emitting chip 120, a first encapsulant 130, and a reflective frame 210.
The reflection frame 210 is formed along the outer side of the first encapsulant 130 at the upper surface of the mounting substrate 110. That is, the reflection frame 210 is formed along the outline of the exterior wall of the first encapsulant 130 or the mounting substrate 110. Accordingly, the light emitting device 200 has a structure in which the light emitting chip 120 and the first encapsulant 130 are mounted in a chamber formed by the inner wall of the reflective frame 210.
Also, the light emitting device 200 of the present embodiment is formed such that the first encapsulant 130 does not cover the entire side surface of the light emitting chip 120 but only covers a portion of the side surface.
A part of the ultraviolet rays emitted through the side of the light emitting chip 120 are incident on the first encapsulant 130, and the other part of the ultraviolet rays are directed toward the reflection frame 210. The ultraviolet rays incident to the first encapsulant 130 pass through the outside of the first encapsulant 130 toward the upper portion of the light emitting device 200. The ultraviolet rays directed to the reflection frame 210 are reflected by the reflection frame 210 toward the upper portion of the light emitting device 200.
As such, even if the first encapsulant 130 is formed to cover only a portion of the side surface of the light emitting chip 120, the light emitting device 200 according to the present embodiment can achieve high light extraction efficiency through the reflection frame 210. That is, the light emitting device 200 according to the present embodiment can further save material costs with respect to the first encapsulant 130 as compared to the first embodiment.
And, the upper surface of the reflection frame 210 is higher than the light emitting chip 120. Accordingly, the inner wall of the reflection frame 210 faces the entire side surface of the light emitting chip 120, thereby efficiently reflecting the ultraviolet rays emitted from the side surface of the light emitting chip 120. Fig. 7 illustrates a case where the inner wall of the reflection frame 210 is perpendicular to the upper surface of the mounting substrate 110. However, the slope of the inner wall of the reflection frame 210 may be changed according to the ultraviolet irradiation range of the light emitting device 200, and the like. For example, the inner wall of the reflection frame 210 may be inclined so that the distance between the inner walls facing each other in the upper direction from the mounting substrate 110 increases.
Fig. 8 and 9 are schematic views showing a light emitting device according to a third embodiment of the present invention.
Fig. 8 is a plan view of a light emitting device 300 according to a third embodiment, and fig. 9 is a cross-sectional view (C1-C2) of the light emitting device 300 according to the third embodiment.
Referring to fig. 8 and 9, the light emitting device 300 according to the third embodiment includes a mounting substrate 110, a light emitting chip 120, a first encapsulant 130, and a second encapsulant 310.
According to the third embodiment, the second encapsulant 310 is positioned on the upper surface of the light emitting chip 120. At this time, the second encapsulant 310 is formed to cover the upper surface of the light emitting chip 120 but not cover the vertex of the upper surface of the light emitting chip 120. In the case where the second encapsulant 310 covers the vertex of the light emitting chip 120, cracks may occur in the second encapsulant 310 due to stress concentration occurring near the vertex of the light emitting chip 120. Accordingly, in order to prevent cracks of the second encapsulant 310, the second encapsulant 310 is formed on the upper surface of the light emitting chip 120 and is formed on a portion of the light emitting chip 120 except for the vertex.
For example, the second encapsulant 310 may be formed in a convex lens shape with an upper portion protruding. The second encapsulant 310 formed in the same structure as the convex lens can concentrate the ultraviolet rays emitted through the upper surface of the light emitting chip 120 toward the upper center of the light emitting device 300. Or the second encapsulant 310 may be formed to have a surface with a concave-convex structure. The second encapsulant 310 having the concave-convex structure on the surface can prevent the ultraviolet rays from being totally reflected by the second encapsulant 310, so that the light extraction efficiency of the light emitting device 300 can be improved.
As described above, the second encapsulant 310 may be formed in various structures according to the desired effect of the light emitting device 300.
For example, the second encapsulant 310 may be formed using epoxy or silicone.
Fig. 10 is a schematic view showing a light emitting device according to a fourth embodiment of the present invention.
Referring to fig. 10, a light emitting device 400 according to the fourth embodiment includes a mounting substrate 110, a sub-mounting substrate 410, a light emitting chip 120, and a first encapsulant 130.
The sub-mount substrate 410 is mounted on the upper portion of the mount substrate 110, and the light emitting chip 120 is mounted on the upper portion of the sub-mount substrate 410.
The sub-mount substrate 410 may be changed according to a specification difference between the light emitting chip 120 and the mount substrate 110.
The sub-mount substrates 410 are connected to the mount substrate 110 and the light emitting chip 120, respectively. The sub-mount substrate 410 thus formed electrically connects the mount substrate 110 and the light emitting chip 120. The sub-mount substrate 410 may be formed of any material and have any structure as long as the sub-mount substrate 110 and the light emitting chip 120 can be electrically connected. For example, the sub-mount substrate 410 may be a printed circuit board, a ceramic substrate formed with electrodes, or a substrate including aluminum nitride (AlN) or silicon carbide (SiC) having high thermal conductivity.
The sub-mount substrate 410 may be connected to the mount substrate 110 by flip-chip bonding or by wire bonding.
Referring to fig. 10, the sub-mount substrate 410 has a circuit pattern formed on an upper surface thereof to be electrically connected to the light emitting chip 120 and the mounting substrate 110. Therefore, the sub-mount substrate 410 and the light emitting chip 120 are flip-chip bonded. The sub-mount substrate 410 and the mount substrate 110 are Wire bonded (Wire bonding) by the Wire 420. At this time, the wire 420 is located at a lower level than the upper surface of the light emitting chip 120. That is, in the present embodiment, a case where the sub-mount substrate 410 and the mounting substrate 110 are connected by wire bonding will be described as an example.
The first encapsulant 130 is formed to cover the side of the light emitting chip 120, the side of the sub-mount substrate 410, and the leads 420. The first encapsulant 130 thus formed can prevent cracks from occurring at the top surface of the light emitting chip 120 and protect the lead 420 from external environments such as impact, dust, moisture, etc.
In the light emitting device 400 of the present embodiment, the sub-mount substrate 410 is disposed in the lower direction of the light emitting chip 120, so that ultraviolet rays emitted from the lower surface of the light emitting chip 120 can be reflected. Further, the first encapsulant 130 is also located around the lower portion of the light emitting chip 120 through the sub-mount substrate 410, and thus the ultraviolet rays emitted from the lower portion of the light emitting chip 120 and passing through the first encapsulant 130 can be refracted by the sub-mount substrate 410 to be directed toward the upper portion of the light emitting device 400.
Also, since the sub-mount substrate 410 causes the height of the first encapsulant 130 to increase and the outer surface length to become long, it is easy to form an outer surface having a small curvature or to make fine adjustment of the outer surface curvature.
Although not shown, the light emitting device 400 of the fourth embodiment may be further formed with a second encapsulant (310 of fig. 8 and 9) or a reflective frame (210 of fig. 6 and 7) covering an upper surface portion of the light emitting chip 120 other than the upper surface vertex.
In describing the embodiment in which the light emitting device 400 includes the sub-mount substrate 410, the description of the embodiment in which the sub-mount substrate 410 and the mounting substrate 110 are connected by flip-chip bonding is omitted. However, in the light emitting device 400 of the present embodiment, it is apparent that the sub-mount substrate 410 connected to the mount substrate 110 by flip-chip bonding can be applied.
As described above, the detailed description of the present invention is made by way of the embodiments with reference to the accompanying drawings, but in the above embodiments, only the preferred examples of the present invention are described, and thus the present invention should not be construed as being limited to the above embodiments, and the scope of the claims of the present invention should be construed as the scope of the claims and the equivalents thereof.
Claims (10)
1. A light emitting device, comprising:
mounting a substrate;
a light emitting chip mounted on the mounting substrate and emitting ultraviolet rays;
a first encapsulant covering at least a portion of a side surface of the light emitting chip, the outer surface being configured as a curved surface;
A reflective frame formed on the upper surface of the mounting substrate and formed along the outer side of the first encapsulant,
Wherein the top of the upper surface of the light emitting chip is not covered by the first encapsulant,
Wherein a part of light emitted from the light emitting chip is refracted at an outer surface of the first encapsulant to be directed toward an upper direction of the light emitting chip,
Another part of the light emitted from the light emitting chip is reflected at the inner wall of the reflection frame to be directed toward the upper direction of the light emitting chip.
2. The light-emitting device of claim 1, wherein,
The thickness of the first encapsulant on the side surface of the light emitting chip is thicker from the upper portion toward the lower portion.
3. The light-emitting device of claim 1, wherein,
The upper end of the first encapsulant is disposed as high or lower as the vertex of the upper surface of the light emitting chip.
4. The light-emitting device of claim 1, wherein,
The first encapsulant is made of a material that transmits light of the light emitting chip.
5. The light-emitting device of claim 1, wherein,
The inner wall of the reflection frame has a slope.
6. The light-emitting device of claim 5, wherein,
The distance between the inner walls of the reflection frame facing each other in the upper direction from the mounting substrate is larger.
7. The light-emitting device of claim 1, wherein,
An upper surface of the reflection frame is disposed higher than an upper surface of the light emitting chip.
8. The light-emitting device according to claim 1, further comprising:
A sub-mount substrate mounted on the mount substrate and electrically connected to the mount substrate,
The light-emitting chip is attached to the sub-attaching substrate and is bonded to the sub-attaching substrate in a reverse chip mode.
9. The light-emitting device according to claim 1, further comprising:
a second encapsulant covering the upper surface of the light emitting chip,
Wherein the second encapsulant does not cover the top of the upper surface of the light emitting chip.
10. The light-emitting device of claim 9, wherein,
The second encapsulant is made of a material that transmits light of the light emitting chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911344520.3A CN111048647B (en) | 2018-01-09 | 2019-01-08 | Light emitting device |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020180002967A KR20190084807A (en) | 2018-01-09 | 2018-01-09 | Light emitting device |
| KR10-2018-0002967 | 2018-01-09 | ||
| CN201980000924.2A CN110249438B (en) | 2018-01-09 | 2019-01-08 | Light emitting device |
| PCT/KR2019/000286 WO2019139334A1 (en) | 2018-01-09 | 2019-01-08 | Light emitting device |
| CN201911344520.3A CN111048647B (en) | 2018-01-09 | 2019-01-08 | Light emitting device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980000924.2A Division CN110249438B (en) | 2018-01-09 | 2019-01-08 | Light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111048647A CN111048647A (en) | 2020-04-21 |
| CN111048647B true CN111048647B (en) | 2024-04-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980000924.2A Active CN110249438B (en) | 2018-01-09 | 2019-01-08 | Light emitting device |
| CN201911344520.3A Active CN111048647B (en) | 2018-01-09 | 2019-01-08 | Light emitting device |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980000924.2A Active CN110249438B (en) | 2018-01-09 | 2019-01-08 | Light emitting device |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20190084807A (en) |
| CN (2) | CN110249438B (en) |
| WO (1) | WO2019139334A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7494133B2 (en) | 2021-03-11 | 2024-06-03 | シチズン電子株式会社 | Light-emitting device |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2019139334A1 (en) | 2019-07-18 |
| KR20190084807A (en) | 2019-07-17 |
| CN111048647A (en) | 2020-04-21 |
| CN110249438B (en) | 2024-04-02 |
| CN110249438A (en) | 2019-09-17 |
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