CN107293536A - Package structure for LED and preparation method thereof - Google Patents
Package structure for LED and preparation method thereof Download PDFInfo
- Publication number
- CN107293536A CN107293536A CN201710706738.3A CN201710706738A CN107293536A CN 107293536 A CN107293536 A CN 107293536A CN 201710706738 A CN201710706738 A CN 201710706738A CN 107293536 A CN107293536 A CN 107293536A
- Authority
- CN
- China
- Prior art keywords
- carrier
- light
- retaining wall
- barricade
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000002360 preparation method Methods 0.000 title claims description 27
- 239000000084 colloidal system Substances 0.000 claims abstract description 96
- 239000000843 powder Substances 0.000 claims abstract description 79
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 70
- 239000000463 material Substances 0.000 claims description 57
- 238000000034 method Methods 0.000 claims description 40
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 33
- 230000002093 peripheral effect Effects 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 230000008033 biological extinction Effects 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229910052582 BN Inorganic materials 0.000 claims description 7
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000011368 organic material Substances 0.000 claims description 7
- 239000012876 carrier material Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 description 22
- 230000008569 process Effects 0.000 description 18
- 208000002173 dizziness Diseases 0.000 description 12
- 238000011049 filling Methods 0.000 description 8
- 241000254158 Lampyridae Species 0.000 description 7
- 239000004568 cement Substances 0.000 description 7
- 210000004209 hair Anatomy 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 238000005282 brightening Methods 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000005246 galvanizing Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
Abstract
The present invention proposes a kind of package structure for LED, including a carrier, a light-emitting diode chip for backlight unit, a first annular barricade, one second circular retaining wall and a fluorescent colloid.Light-emitting diode chip for backlight unit is electrically connected to carrier.First annular barricade and the second circular retaining wall are set around light-emitting diode chip for backlight unit, and the second circular retaining wall is arranged between light-emitting diode chip for backlight unit and first annular barricade.Fluorescent colloid is configured on carrier and at least covering luminousing diode chip and the second circular retaining wall, and the fluorescent colloid includes at least one phosphor powder and at least one colloid is mixed, wherein described phosphor powder is distributed on the surface of light-emitting diode chip for backlight unit.
Description
The application is to apply on June 13rd, 2012, Application No. " 201210194908.1 ", entitled " luminous
The divisional application of the Chinese invention patent application of diode package structure and preparation method thereof "
Technical field
Sealed the invention relates to a kind of encapsulating structure and preparation method thereof, and in particular to a kind of light emitting diode
Assembling structure and preparation method thereof.
Background technology
Light emitting diode is a kind of light-emitting component being made up of the semi-conducting material containing III- group Ⅴ elements, and luminous
Diode has the advantages that such as long lifespan, small volume, high shock resistance, low-heat are produced and low power consumption, therefore extensive
Applied to the indicator or light source in family expenses and various equipment.In recent years, light emitting diode develops towards multicolour and high brightness,
Therefore its application field has extended to large-scale billboards, traffic signal light and association area.In future, light emitting diode is even
It is likely to become the primary illumination light source for having power saving and environment-friendly function concurrently.
For example, it is to use the pole of blue light emitting two with most of packaged type of current high-power white light-emitting diode
Manage and the use for yellow fluorescent powder of arranging in pairs or groups is formed.White light emitting diode so it is because its light-emitting diode chip for backlight unit to emit white light
Send blue light, blue light by that can be converted into gold-tinted after yellow fluorescent powder, and the gold-tinted being converted into by yellow fluorescent powder with not by
The blue light of conversion is to be mixed into white light.By the blue light that light emitting diode is sent has a certain degree of directive property, this can make
The luminous intensity for being able to the blue light that larger angle deviates optical axis is weaker, and then causes with the intensity of the gold-tinted of larger angle deviation optical axis
More than the intensity of blue light.Consequently, it is possible to which the edge of the range of exposures of illuminator can be caused to produce yellow swoon.In addition, using blue light
The white light emitting diode of diode and yellow fluorescent powder of arranging in pairs or groups often can be because yellow fluorescent powder divides on chip on processing procedure
Cloth is uneven, also causes the white light periphery of its outgoing to be distributed a circle gold-tinted, i.e., yellow dizzy phenomenon (yellowish halo), so that
The color uniformity for the light that influence white light emitting diode is sent.
Therefore, the past reduces yellow dizzy hair to add brightening agent in phosphor powder the problem of solving yellow dizzy
Raw, wherein brightening agent is, for example, white particles or glass granules, and the light beam reduction that can so scatter light emitting diode is yellow dizzy
Degree.Relatively, the addition of brightening agent but often sacrifices the overall light extraction efficiency of light emitting diode, and in color rendering
Performance on can not also produce the effect of any lifting.
The content of the invention
The present invention provides a kind of package structure for LED, and it can show preferably optical appearance.
The present invention provides a kind of preparation method of package structure for LED, the light emitting diode envelope above-mentioned to make
Assembling structure.
The present invention proposes a kind of package structure for LED, and it includes a carrier, at least one light-emitting diodes tube core
Piece, a first annular barricade, one second circular retaining wall and a fluorescent colloid.Carrier is surrounded with a supporting region and one and held
Carry the peripheral region in area.Light-emitting diode chip for backlight unit is configured in the supporting region of carrier, and is electrically connected to carrier.It is first annular
Barricade is configured in the peripheral region of carrier, and around light-emitting diode chip for backlight unit.Second circular retaining wall is configured at first annular gear
The inner side of wall, and around light-emitting diode chip for backlight unit, wherein the height of second circular retaining wall is less than the height of first annular barricade
Degree.And, fluorescent colloid is configured on carrier and at least covering luminousing diode chip and the second circular retaining wall, wherein the firefly
Optical cement body includes at least one phosphor powder and at least one colloid, and the phosphor powder is distributed in the surface of light-emitting diode chip for backlight unit
On.
In another embodiment of the present invention, there is a spacing between described first annular barricade and the second circular retaining wall, and
A groove is defined on carrier, the fluorescent colloid is filled in groove.
In further embodiment of this invention, described carrier is integrally formed with first annular barricade or the second circular retaining wall.
In further embodiment of this invention, described first annular barricade or the second circular retaining wall are a discontinuous annular gear
Wall.
In further embodiment of this invention, described package structure for LED further includes multiple bar shaped barricades.The bar
Shape barricade is configured on carrier and connects second circular retaining wall, wherein the bar shaped barricade is being held with the second circular retaining wall
Carry and define multiple clathrate grooves on device, and light-emitting diode chip for backlight unit is arranged in the clathrate groove.
The present invention proposes another package structure for LED, it include a carrier, multiple light-emitting diode chip for backlight unit,
One circular retaining wall, multiple bar shaped barricades and a fluorescent colloid.Light-emitting diode chip for backlight unit is configured on carrier, and is electrically connected with
To carrier.Circular retaining wall is configured on carrier, and around light-emitting diode chip for backlight unit.The bar shaped barricade is configured at carrier
Upper and connection circular retaining wall, wherein bar shaped barricade defines multiple clathrate grooves with circular retaining wall on carrier, and lights
Diode chip for backlight unit is arranged in clathrate groove.Fluorescent colloid is configured on carrier, and is filled in clathrate groove and extremely
Few covering luminousing diode chip, wherein fluorescent colloid include at least one phosphor powder and at least one colloid, and phosphor powder point
It is distributed on the surface of light-emitting diode chip for backlight unit.
In further embodiment of this invention, described multiple bar shaped barricades are connected with each other and define multiple circular retaining walls,
Wherein the multiple time circular retaining wall is configured on carrier and it surrounds light-emitting diode chip for backlight unit respectively.
In further embodiment of this invention, the height of described ring-type barricade is identical with the height of each bar shaped barricade.
In further embodiment of this invention, the height of described each bar shaped barricade is less than the height of ring-type barricade.
In further embodiment of this invention, described carrier is integrally formed with circular retaining wall or bar shaped barricade.
In further embodiment of this invention, described light-emitting diode chip for backlight unit system electrically connects through face-down bonding technique with carrier
Connect.
In further embodiment of this invention, described light-emitting diode chip for backlight unit system is electrical through wire bonding technologies and carrier
Connection.
In further embodiment of this invention, the material of described carrier includes ceramics, high molecular polymer or metal.
In further embodiment of this invention, the material and the material of the second circular retaining wall of described first annular barricade include
Silicon, silica, boron nitride, rubber, high-molecular organic material or metal.
The present invention proposes a kind of preparation method of package structure for LED, and it comprises the following steps.One is provided to carry
Device, wherein carrier have a supporting region and one around the peripheral region of supporting region.Configure at least one light-emitting diode chip for backlight unit
In in the supporting region of carrier, and light-emitting diode chip for backlight unit is electrically connected to carrier.A first annular barricade is formed in carrying
In the peripheral region of device.One second circular retaining wall is formed in the peripheral region of carrier, wherein the second circular retaining wall is around luminous two
Pole pipe chip and the inner side for being arranged at first annular barricade, and height of the height less than first annular barricade of the second circular retaining wall
Degree.Fill a fluorescent colloid on carrier with least covering luminousing diode chip and the second circular retaining wall, wherein the firefly
Optical cement body includes at least one phosphor powder and at least one colloid is mixed, and phosphor powder is interspersed among in colloid.Afterwards, carry out
One centrifuging process, so that the phosphor powder in fluorescent colloid is fallen on the surface of light-emitting diode chip for backlight unit.Finally, baking box is placed to enter
Row baking setting.
In another embodiment of the present invention, there is a spacing between described first annular barricade and the second circular retaining wall,
A groove is defined on carrier, and fluorescent colloid is filled in groove.
In another embodiment of the present invention, the preparation method of described package structure for LED, in addition to：Formed multiple
Bar shaped barricade, is configured on carrier and connects the second circular retaining wall, wherein the bar shaped barricade is being held with the second circular retaining wall
Carry and define multiple clathrate grooves on device, and the light-emitting diode chip for backlight unit is arranged in the clathrate groove.
In another embodiment of the present invention, described carrier is integrally formed with first annular barricade or the second circular retaining wall.
In another embodiment of the present invention, described first annular barricade or the second circular retaining wall are discontinuous annular gear
Wall.
The present invention reintroduces a kind of preparation method of package structure for LED, and it comprises the following steps.One is provided to hold
Carry device.Multiple light-emitting diode chip for backlight unit are configured on carrier, and light-emitting diode chip for backlight unit is electrically connected to carrier.Form one
Circular retaining wall is on carrier, and wherein circular retaining wall surrounds light-emitting diode chip for backlight unit.Multiple bar shaped barricades are formed on carrier,
Wherein bar shaped barricade connection circular retaining wall, and bar shaped barricade defines multiple clathrate grooves with circular retaining wall on carrier,
And light-emitting diode chip for backlight unit is arranged in clathrate groove.A fluorescent colloid is filled in a supporting region of carrier, wherein firefly
Optical cement body fills up clathrate groove and at least covering luminousing diode chip, and fluorescent colloid is including at least one phosphor powder and at least
A kind of colloid is mixed, and phosphor powder is scattered in colloid.A centrifuging process is carried out so that the phosphor powder in fluorescent colloid sinks
Drop on the surface of light-emitting diode chip for backlight unit.Finally, place a baking box and carry out a baking program.
In another embodiment of the present invention, described bar shaped barricade is connected with each other and defines multiple circular retaining walls, wherein
The multiple circular retaining wall is configured on carrier and it surrounds light-emitting diode chip for backlight unit respectively.
In another embodiment of the present invention, described filling fluorescent colloid the step of the supporting region of carrier, including：By firefly
Optical cement body sequentially inserts clathrate groove, makes a upper surface of fluorescent colloid and a top surface of ring-type barricade and each bar shaped barricade
An apical side height it is identical.
In another embodiment of the present invention, described filling fluorescent colloid the step of the supporting region of carrier, including：By firefly
Optical cement body arbitrarily inserts the clathrate groove of a part；And carry out a centrifuging process so that fluorescent colloid to both sides flow with
Clathrate groove is filled up, and fluorescent colloid is covered in a top surface of each bar shaped barricade.
In another embodiment of the present invention, described carrier is integrally formed with circular retaining wall or bar shaped barricade.
In another embodiment of the present invention, described circular retaining wall is discontinuous circular retaining wall.
In another embodiment of the present invention, the preparation method of described package structure for LED, wherein configuring each hair
Luminous diode chip is electrically connected with the method system on carrier through face-down bonding technique with carrier.
In another embodiment of the present invention, the preparation method of described package structure for LED, wherein configuring each hair
Luminous diode chip is electrically connected with the method system on carrier through wire bonding technologies with carrier.
In another embodiment of the present invention, the material of described carrier includes ceramics, high molecular polymer or metal.
In another embodiment of the present invention, the material and the material of the second circular retaining wall of described first annular barricade include
Silicon, silica, boron nitride, rubber, high-molecular organic material or metal.
Based on above-mentioned, because the package structure for LED of the present invention has first annular barricade and the second circular retaining wall
Design, and the phosphor powder of fluorescent colloid is distribution on the surface of light-emitting diode chip for backlight unit, therefore can be prevented effectively from luminous two
The generation of the dizzy phenomenon of pole pipe encapsulating structure side wall Huang and it can effectively lift overall luminous efficiency.
Brief description of the drawings
For the above objects, features and advantages of the present invention can be become apparent, below in conjunction with tool of the accompanying drawing to the present invention
Body embodiment elaborates, wherein：
Figure 1A is a kind of diagrammatic cross-section of package structure for LED of one embodiment of the invention.
Figure 1B is the schematic top plan view of Figure 1A package structure for LED.
Fig. 1 C are a kind of diagrammatic cross-section of package structure for LED of another embodiment of the present invention.
Fig. 1 D are a kind of schematic top plan view of package structure for LED of one embodiment of the invention.
Fig. 2A is a kind of diagrammatic cross-section of package structure for LED of another embodiment of the present invention.
Fig. 2 B are the schematic top plan view of Fig. 2A package structure for LED.
Fig. 2 C are a kind of diagrammatic cross-section of package structure for LED of another embodiment of the present invention.
Fig. 3 is a kind of schematic flow sheet of the preparation method of package structure for LED of one embodiment of the invention.
Fig. 4 A are a kind of diagrammatic cross-section of package structure for LED of another embodiment of the present invention.
Fig. 4 B are the schematic top plan view of Fig. 4 A package structure for LED.
Fig. 4 C are a kind of diagrammatic cross-section of package structure for LED of another embodiment of the present invention.
Fig. 4 D are a kind of schematic top plan view of light emitting diode seal structure of another embodiment of the present invention.
Fig. 5 illustrates for a kind of flow of the preparation method of package structure for LED of another embodiment of the present invention
Figure.
Main element symbol description：
100a、100b、100c、100d、100e、100f、100g、100h：Package structure for LED
110、110a：Carrier
112：Supporting region
114：Peripheral region
120a、120b：Light-emitting diode chip for backlight unit
125：Wire
130a：First annular barricade
130b：Secondary circular retaining wall
130c：Circular retaining wall
131：Top surface
132：Top surface
140a、140b：Second circular retaining wall
140c、140d、140e：Bar shaped barricade
141、143：Top surface
150：Fluorescent colloid
151：Upper surface
152：Phosphor powder
154：Colloid
C、C’：Clathrate groove
D：Spacing
H1、H2、H3、H4：Highly
S10~S16, S20~S26：Step
U：Groove
Embodiment
Figure 1A is a kind of diagrammatic cross-section of package structure for LED of one embodiment of the invention.Figure 1B is Figure 1A
Package structure for LED schematic top plan view.It please also refer to Figure 1A and Figure 1B, in the present embodiment, light emitting diode
Encapsulating structure 100a includes a carrier 110, at least one light-emitting diode chip for backlight unit 120a and (shown schematically only painted in Figure 1A and Figure 1B
Show one), a first annular barricade 130a, one second circular retaining wall 140a and a fluorescent colloid 150.
Specifically, carrier 110 has a supporting region 112 and one surrounds the peripheral region 114 of supporting region 112.Herein,
The material of carrier 110 is, for example, ceramics, high molecular polymer, silicon, carborundum, insulating materials or metal, wherein working as carrier
When 110 material is metal, carrier 110 can be a copper base or a metallic core printed circuit board (PCB) (Metal Core
Printed Circuit Board, MCPCB), but be not limited thereto.
Light-emitting diode chip for backlight unit 120a is configured in the supporting region 112 of carrier 110, and is electrically connected to carrier 110.
In the present embodiment, light-emitting diode chip for backlight unit 120a systems are electrically connected with through face-down bonding technique with carrier 110.That is,
The package structure for LED 100 of the present embodiment be an adhesive surface kenel (surface mounted device type,
SMD type) package structure for LED.Light-emitting diode chip for backlight unit 120a herein is with blue LED chip
For for example, but being not limited thereto.
First annular barricade 130a is configured in the peripheral region 114 of carrier 110, and around light-emitting diode chip for backlight unit
120a.Second circular retaining wall 140a configures first annular barricade 130a inner side, also in the peripheral region 114 of carrier 110,
And around light-emitting diode chip for backlight unit 120.Particularly, in the present embodiment, the second circular retaining wall 140a is arranged at light emitting diode
Between chip 120a and first annular barricade 130a, and the second circular retaining wall 140a height H2 is less than first annular barricade 130a
Height H1.In addition, first annular barricade 130a material and the second circular retaining wall 140a material be, for example, silicon, silica,
Boron nitride, rubber, high-molecular organic material or metal, wherein first annular barricade 130a material can be with the second circular retaining wall
140a material is identical or different, is not any limitation as in this.Furthermore, the first annular barricade 130a of the present embodiment and the second ring
Shape barricade 140a all has not extinction and the characteristic with reflection function.Herein, the annulars of first annular barricade 130a and second are kept off
Wall 140a is all a continuous circular retaining wall.
Fluorescent colloid 150 is configured on carrier 110 and the annulars of at least covering luminousing diode chip 120a and second are kept off
Wall 140a.Particularly, the fluorescent colloid 150 of the present embodiment includes at least one phosphor powder 152 and at least one colloid 154,
That is, the fluorescent colloid 150 of the present embodiment is to be mixed by least one phosphor powder 152 with least one colloid 154, its
Middle phosphor powder 152 is distributed on light-emitting diode chip for backlight unit 120a surface.Herein, phosphor powder 152 is, for example, yellow fluorescent powder, red
Color phosphor powder, green fluorescent powder or more phosphor powder are combined, but are not limited thereto.In addition, also may be used in fluorescent colloid 150
Add the light such as color or the uniformity of the light diffusing agent (not illustrating) to adjust the light that package structure for LED 100a is sent
Learn effect.
More particularly, in the present embodiment, as shown in Figure 1A, the second circular retaining wall 140a and first annular barricade 130a
Between there is a space D, and define on carrier 110 a groove U.In the present embodiment, fluorescent colloid 150 is filled in groove
U, and phosphor powder 152 is distributed in groove U bottom surface and the second circular retaining wall 140a top surface.
Because there is the package structure for LED 100a of the present embodiment the annulars of first annular barricade 130a and second to keep off
Wall 140a design, and the phosphor powder 152 of fluorescent colloid 150 is distributed on light-emitting diode chip for backlight unit 120a surface, and part
Phosphor powder 152 is distributed in groove U bottom surface and the second circular retaining wall 140a top surface.Therefore, light-emitting diode chip for backlight unit 120a
Around (i.e. the peripheral region 114 of carrier 110) excessive phosphor powder 152 will not be assembled, you can reduce carrier 110 periphery
Idle space in area 114, so that more phosphor powder 152 is distributed on light-emitting diode chip for backlight unit 120a surface.Therefore, work as tool
The coloured light (being, for example, blue light or ultraviolet light) that the light-emitting diode chip for backlight unit 120a for having directive property is sent exposes to distribution thereon
Phosphor powder 152, to excite phosphor powder 152 to send coloured light (be, for example, gold-tinted or feux rouges), and with light-emitting diode chip for backlight unit 120a
When the coloured light (being, for example, blue light or ultraviolet light) sent is mixed, peripheral region 114 can be prevented effectively from and stack more phosphor powder
152 are excited by light-emitting diode chip for backlight unit 120a and produce yellow dizzy phenomenon.
Furthermore, because first annular barricade 130a and the second circular retaining wall 140a all has not extinction and with reflection function
Characteristic, therefore the coloured light (being, for example, blue light) sent as light-emitting diode chip for backlight unit 120a exposes to and is distributed in groove U
During phosphor powder 152, first annular barricade 130a and the second circular retaining wall 140a can make coloured light produce reflection and scattering phenomenon, and then
Reflection coloured light and scattering coloured light is exposed in supporting region 112, package structure for LED 100a light extraction can be effectively improved
Brightness.In short, preferably optical appearance can be presented in the package structure for LED 100a of the present embodiment.
It is noted that the present embodiment does not limit light-emitting diode chip for backlight unit 120a and carrier 110 connection form,
Although light-emitting diode chip for backlight unit 120a mentioned herein is embodied as with carrier 110 electrically connecting through the mode of flip chip bonding
Connect.But, in other embodiment, it refer to Fig. 1 C, package structure for LED 100b light-emitting diode chip for backlight unit 120b
Also it can pass through a plurality of wire 125 to be electrically connected with carrier 110 in the way of routing is engaged, it is adoptable that this still falls within the present invention
Technical scheme, does not depart from the scope of the invention to be protected.Furthermore, although carrier 110, first annular gear in the present embodiment
Wall 130a and the second circular retaining wall 140a is each independent element, but in other embodiments not illustrated, carrier 110 with
The structure that first annular barricade 130a can also be formed in one, the wherein material of carrier 110 are with first annular barricade 130a's
Material for example all uses metal；Either, the structure that the circular retaining wall 140a of carrier 110 and second is formed in one, wherein holding
Carry the material of device 110 and the second circular retaining wall 140a material for example all uses metal.
Although the second circular retaining wall 140a of the present embodiment form and first annular barricade 130a homomorphosis, are all
One continuous circular retaining wall.But, in other embodiment, refer to Fig. 1 D, package structure for LED 100c the second ring
Shape barricade 140b also can be a discontinuous circular retaining wall, and first annular barricade 130a is under same concept, also can be for one not
Continuous circular retaining wall (not illustrating), this still falls within adoptable technical scheme of the invention, does not depart from what the present invention to be protected
Scope.In addition, in other embodiments not illustrated, those skilled in the art works as the explanation that can refer to above-described embodiment, according to
According to actual demand, and said elements, the material of element, the kenel of element and its configuration mode are selected, to reach required technology
Effect.
Fig. 2A is a kind of diagrammatic cross-section of package structure for LED of another embodiment of the present invention.Fig. 2 B are figure
The schematic top plan view of 2A package structure for LED.The present embodiment is continued to use in the element numbers and part of previous embodiment
Hold, wherein adopting the identical or approximate element that is denoted by the same reference numerals, and eliminate the explanation of constructed content.On
The explanation of clipped can refer to previous embodiment, and it is no longer repeated for the present embodiment.
It please also refer to Fig. 2A and Fig. 2 B, Fig. 2A and Fig. 2 B package structure for LED 100d and Figure 1A and Figure 1B
Package structure for LED 100a is similar, and its difference is：Fig. 2A and Fig. 2 B package structure for LED 100d
Including multiple light-emitting diode chip for backlight unit 120a, wherein these light-emitting diode chip for backlight unit 120a is to pass through face-down bonding technique and carrier
110 are electrically connected with.Package structure for LED 100d herein is, for example, one chip-circuit board engagement (chip on
Board, COB) kenel package structure for LED.In addition, the phosphor powder 152 of fluorescent colloid 150 is distributed across these hairs
In gap on luminous diode chip 120a surface, between these light-emitting diode chip for backlight unit 120a.Certainly, as shown in Figure 2 A,
Fluorescent colloid 150 can also be filled in the groove U defined on carrier 110, and phosphor powder 152 is distributed in groove U and the
Second ring barricade 140a top surface.
Because the light-emitting diode chip for backlight unit 120a of the present embodiment is to be electrically connected with using face-down bonding technique with carrier 110,
The routing region reserved between multiple light-emitting diode chip for backlight unit 120a can be saved, therefore can be on carrier 110 under unit area
The more light-emitting diode chip for backlight unit 120a of configuration, you can the more number of chips of configuration, can effectively improve LED package
Structure 100d emitting brightness.Furthermore, because the package structure for LED 100a of the present embodiment has first annular barricade
130a and the second circular retaining wall 140a design, and the phosphor powder 152 of fluorescent colloid 150 is distributed across the light-emitting diodes tube core
In gap on piece 120a surface between each chip 120a, and the second circular retaining wall 140a top surface with it is first annular
In gap between barricade 130a and the second circular retaining wall 140a.Therefore, (held around the light-emitting diode chip for backlight unit 120a
Carry the peripheral region 114 of device 110) excessive phosphor powder 152 will not be assembled, it can not only reduce in the peripheral region 114 of carrier 110
Idle space, more because first annular barricade 130a and the second circular retaining wall 140a all have not extinction and have reflection function
Characteristic, therefore the gap between the second circular retaining wall 140a top surface and first annular barricade 130a and the second circular retaining wall 140a
Interior assembled phosphor powder 152 is not easily susceptible to exciting for light-emitting diode chip for backlight unit 120a, can be prevented effectively from peripheral region 114 and produce Huang
Dizzy phenomenon.
Further, since first annular barricade 130a and the second circular retaining wall 140a all have not extinction and with reflection function
Characteristic, therefore reflection and scatter in coloured light to supporting region 112 produced by the light-emitting diode chip for backlight unit 120a, can effectively carry
High package structure for LED 100d emitting brightness.In short, the package structure for LED 100d of the present embodiment can
Preferably optical appearance is presented.
It is noted that the present embodiment does not limit the light-emitting diode chip for backlight unit 120a and carrier 110 connection
Form, although the light-emitting diode chip for backlight unit 120a mentioned herein is embodied as mode and carrier through flip chip bonding
110 are electrically connected with.But, in other embodiment, refer to Fig. 2 C, the package structure for LED 100e light-emitting diodes
Die 120b also can pass through a plurality of wire 125 and is electrically connected with the way of routing is engaged with carrier 110, and this still falls within this hair
Bright adoptable technical scheme, does not depart from the scope of the invention to be protected.
In addition, although carrier 110, first annular barricade 130a and the second circular retaining wall 140a are each in the present embodiment
From independent element, but in other embodiments not illustrated, carrier 110 and first annular barricade 130a can be also integrated into
The structure of type, the wherein material of carrier 110 and first annular barricade 130a material for example all use metal；Either, hold
Carry the structure that the circular retaining wall 140a of device 110 and second can also be formed in one, the wherein material of carrier 110 and the second annular
Barricade 140a material for example all uses metal.
Although the form of the second circular retaining wall 140a shown in Fig. 2 B of the present embodiment and first annular barricade 130a shape
State is identical, that is, is all a continuous circular retaining wall.But, in other embodiments not illustrated, the second circular retaining wall also can be one
Discontinuous circular retaining wall (refer to as shown in figure iD), and first annular barricade 130a is under same concept, also can be for one not
Continuous circular retaining wall (not illustrating), this still falls within adoptable technical scheme of the invention, does not depart from what the present invention to be protected
Scope.
Package structure for LED 100a, 100b, 100c, 100d, 100e of the present invention structure are only introduced above, and
The preparation method for not introducing package structure for LED 100a, 100b, 100c, 100d, 100e of the present invention.In this regard, following
The making of package structure for LED 100a, 100b, 100c, 100d, 100e structure will be described in detail with an embodiment
Method.
Fig. 3 is a kind of schematic flow sheet of the preparation method of package structure for LED of one embodiment of the invention.
Fig. 3 is refer to, and coordinates the schema referring to figs. 1A to 1D and Fig. 2A to 2C simultaneously.
According to the preparation method of the package structure for LED of the present embodiment, first, there is provided a carrier by step S10
110, wherein carrier 110 has a supporting region 112 and one surrounds the peripheral region 114 of supporting region 112.Herein, carrier 110
Material be, for example, ceramics, high molecular polymer, silicon, carborundum, insulating materials or metal, wherein when the material of carrier 110
During for metal, carrier 110 can be a copper base or a metallic core printed circuit board (PCB) (Metal Core Printed
Circuit Board, MCPCB), but be not limited thereto.
Then, step S11, configures at least one light-emitting diode chip for backlight unit 120a (or 120b) in the carrying of carrier 110
In area 112, and light-emitting diode chip for backlight unit 120a (or 120b) is electrically connected to carrier 110.Herein, light-emitting diode chip for backlight unit
120a (or 120b) is to be electrically connected with through flip chip bonding (or routing engagement) technology with carrier 110.
Then, step S12, forms a first annular barricade 130a in the peripheral region 114 of carrier 110.
Then, step S13, forms one second circular retaining wall 140a (or 140b) in the peripheral region 114 of carrier 110.
Particularly, the second circular retaining wall 140a (or 140b) is around light-emitting diode chip for backlight unit 120a (or 120b) and is arranged at first annular
Barricade 130a inner side, also between light-emitting diode chip for backlight unit 120a (or 120b) and first annular barricade 130a.Second annular
Barricade 140a (or 140b) height H2 is less than first annular barricade 130a height H1.Herein, more particularly, the second ring is kept off
There is a space D between wall 140a (or 140b) and first annular barricade 130a, and define on carrier 110 groove U.The
One circular retaining wall 130a material and the second circular retaining wall 140a (or 140b) material have not extinction and with reflection function
Characteristic, e.g. silicon, silica, boron nitride, rubber, high-molecular organic material or metal, wherein first annular barricade 130a
Material can be identical or different with the second circular retaining wall 140a (or 140b) material, be not any limitation as in this.The present embodiment
In, first annular barricade 130a and the second circular retaining wall 140a (or 140b) they can be a continuous circular retaining wall, can also non-company
Continuous circular retaining wall is made to change.
It should be noted that, do not limit in the present embodiment first annular barricade 130a and the second circular retaining wall 140a (or
Formation order 140b).That is, can be initially formed after first annular barricade 130a, re-form the second circular retaining wall 140a (or
140b)；Either, after first annular barricade 130a and carrier 110 are integrally formed, re-form the second circular retaining wall 140a (or
140b) on carrier 110；Either, it is initially formed after the second circular retaining wall 140a (or 140b), re-forms first annular barricade
130a, is not any limitation as in this.In addition, forming first annular barricade 130a and the second circular retaining wall 140a (or 140b) side
Method may include to carry out dispensing program (now, first annular barricade 130a and the second circular retaining wall through point gum machine (not illustrating)
140a (or 140b) material is, for example, rubber) or it is (now, first annular to be formed through photoetching, etching and galvanizing process
Barricade 130a and the second circular retaining wall 140a (or 140b) material are, for example, metal).
Afterwards, step S14, filling one fluorescent colloid 150 on carrier 110 with least covering luminousing diode chip
120a (or 120b) and the second circular retaining wall 140b, wherein fluorescent colloid 150 include at least one phosphor powder 152 and at least one
Colloid 154 is mixed, and phosphor powder 152 is interspersed among in colloid 154.It should be noted that, the method example of filling fluorescent colloid 150
In this way dispensing program is carried out through point gum machine (not illustrating).During for dispensing glue, the fluorescent in fluorescent colloid 150
The settling velocity of powder 152 is inconsistent, therefore would generally be in fluorescent colloid 150 doped with antiprecipitant, such as silica
(SiO2) (not illustrating).Furthermore, also light emitting diode can be adjusted added with a light diffusing agent (not illustrating) in fluorescent colloid 150
The optical effects such as the color or the uniformity of the light that encapsulating structure 100a is sent.
Then, step S15, carries out a centrifuging process so that the phosphor powder 152 in fluorescent colloid 150 is settled down to light-emitting diodes
On the surface of die 120 (or 120b).Herein, carry out centrifuging process be to be realized using centrifuge (not illustrating), through from
The phosphor powder 152 being scattered in colloid 154 is distributed in light-emitting diode chip for backlight unit 120 (or 120b) surface by the centrifugal force of scheming
On, phosphor powder 152 can be made to be evenly distributed in light-emitting diode chip for backlight unit 120 (or 120b) surface, and avoid phosphor powder 152 from hoarding
Uneven thickness one, and influence optical effect, or hoard to the peripheral region 114 of carrier 110 and produce because of excessive phosphor powder 152
The raw dizzy phenomenon of side wall Huang.Certainly, during centrifuging process, phosphor powder 152 also probably due to the relation of centrifugal force and fill
In in groove U.
Finally, step S16, places a baking box and carries out a baking program to solidify fluorescent colloid 150, and completes light-emitting diodes
Pipe encapsulating structure 100a, 100b, 100c, 100d, 100e making.
Because the present embodiment is first to have carried out after centrifuging process, that is, it is distributed in the phosphor powder 152 in fluorescent colloid 150
On the surface of light-emitting diode chip for backlight unit 120 (or 120b), baking program is just carried out.Filled compared to known after fluorescent colloid i.e.
For progress baking program, package structure for LED 100a, 100b, 100c, 100d, 100e of the present embodiment colourity seat
Mark is difficult to offset or increased (elongation), you can more concentrates, can be showed with preferably colourity.In addition, through centrifuging process also
Bubble in fluorescent colloid 150 can be departed from, and make formed package structure for LED 100a, 100b, 100c,
100d, 100e have preferably optical appearance.
Fig. 4 A are a kind of diagrammatic cross-section of package structure for LED of another embodiment of the present invention.Fig. 4 B are figure
The schematic top plan view of 4A package structure for LED.The present embodiment is continued to use in the element numbers and part of previous embodiment
Hold, wherein adopting the identical or approximate element that is denoted by the same reference numerals, and eliminate the explanation of constructed content.On
The explanation of clipped can refer to previous embodiment, and it is no longer repeated for the present embodiment.
Fig. 4 A and Fig. 4 B are please also refer to, the package structure for LED 100f of the present embodiment includes a carrier
110a, multiple light-emitting diode chip for backlight unit 120a, a circular retaining wall 130c, multiple bar shaped barricade 140c and a fluorescent colloid 150.
Carrier 110a material is, for example, ceramics, high molecular polymer or metal, wherein when carrier 110a material is metal,
Carrier 110a can be a copper base or a metallic core printed circuit board (PCB) (Metal Core Printed Circuit
Board, MCPCB), but be not limited thereto.In the present embodiment, light-emitting diode chip for backlight unit 120a be configured on carrier 110a and
Carrier 110a is electrically connected to, wherein light-emitting diode chip for backlight unit 120a is electrically connected with carrier 110a through face-down bonding technique
Connect.Circular retaining wall 130c is configured on carrier 110a and around light-emitting diode chip for backlight unit 120a.
Bar shaped barricade 140c is configured on carrier 110a and connects circular retaining wall 130c, wherein bar shaped barricade 140c and ring
Shape barricade 130c defines multiple clathrate groove C on carrier 110a, and light-emitting diode chip for backlight unit 120a is respectively arranged at
In clathrate groove C.In another embodiment, Fig. 4 D, package structure for LED 100h bar shaped barricade 140e refer to
Also multiple circular retaining wall 130b can be defined to be connected with each other, secondary circular retaining wall 130b is configured on carrier 110a and it
Each light-emitting diode chip for backlight unit 120a is surrounded respectively, and defines multiple clathrate groove C '.It refer again to Fig. 4 A and Fig. 4 B, firefly
Optical cement body 150 is configured on carrier 110a, and is filled in clathrate groove C and at least covering luminousing diode chip
120a, wherein fluorescent colloid 150 include at least one phosphor powder 152 and at least one colloid 154, and phosphor powder 152 is distributed in
On light-emitting diode chip for backlight unit 120a surface.More particularly, in the present embodiment, ring-type barricade 130c height H3 with it is each
Bar shaped barricade 140c height H4 is substantially the same, wherein the bar shaped barricade 140c is by continuous bar shaped barricade (i.e. Fig. 4 B
The barricade of middle y direction) constituted with discontinuous bar shaped barricade (i.e. the barricade of X direction in Fig. 4 B), but not with this
It is limited.Circular retaining wall 130c material and each bar shaped barricade 140c material are, for example, silicon, silica, boron nitride, rubber, had
Machine high polymer material or metal.
Because the light-emitting diode chip for backlight unit 120a of the present embodiment is to be electrically connected with using face-down bonding technique with carrier 110a,
The routing region reserved between multiple light-emitting diode chip for backlight unit 120a can be saved, therefore can be on carrier 110a under unit area
The more light-emitting diode chip for backlight unit 120a of configuration, you can the more number of chips of configuration, can effectively improve LED package
Structure 100h emitting brightness.Furthermore, because the package structure for LED 100f of the present embodiment has circular retaining wall 130c
And the collocation design of the bar shaped barricade 140c, therefore the idle space on carrier 110a can be reduced, and reduce excessive fluorescent
Powder 152 is piled up in the gap between circular retaining wall 130c and bar shaped barricade 140c, it is not easily susceptible to light-emitting diode chip for backlight unit
120a's excites, therefore can be prevented effectively from side wall and produce yellow dizzy phenomenon.Further, since the circular retaining wall 130c of the present embodiment and described
Bar shaped barricade 140c has not extinction and the characteristic with reflection function, therefore can reflect and scatter the light-emitting diode chip for backlight unit
Coloured light produced by 120a, can effectively improve package structure for LED 100h emitting brightness.In short, the present embodiment
Preferably optical appearance can be presented in package structure for LED 100h.
It is noted that the present embodiment does not limit the light-emitting diode chip for backlight unit 120a and carrier 110a connection
Form, although the light-emitting diode chip for backlight unit 120a mentioned herein is embodied as mode and carrier through flip chip bonding
110a is electrically connected with.But, in other embodiments not illustrated, the light-emitting diode chip for backlight unit of package structure for LED
Also the mode and carrier that can pass through routing engagement are electrically connected with, and this still falls within adoptable technical scheme of the invention, not departed from
The scope of the invention to be protected.Furthermore, although carrier 110a, circular retaining wall 130c and bar shaped barricade in the present embodiment
140c is each independent element, but in other embodiments not illustrated, carrier 110a and circular retaining wall 130c also can be
Integrally formed structure, wherein carrier 110a material and first annular barricade 130c material for example all use metal；Or
Person is, the structure that carrier 110a and the bar shaped barricade 140c can also be formed in one, wherein carrier 110a material with
And the material of the bar shaped barricade 140c for example all uses metal.In addition, although the bar shaped barricade 140c's of the present embodiment
Height H4 is identical substantially with circular retaining wall 130c height H3, but in other embodiment, refer to Fig. 4 C, light emitting diode
Encapsulating structure 100g each bar shaped barricade 140d height H5 can also be less than ring-type barricade 130a height H3, and this still falls within this
Adoptable technical scheme is invented, the scope of the invention to be protected is not departed from.In addition, in other embodiments not illustrated,
Those skilled in the art is when the explanation that can refer to above-described embodiment, according to actual demand, and selects said elements, the material of element
Matter, the kenel of element and its configuration mode, to reach required technique effect.
Package structure for LED 100h, 100i of the present invention structure are only introduced above, do not introduce the present invention's
Package structure for LED 100h, 100i preparation method.In this regard, below light-emitting diodes will be described in detail with an embodiment
The preparation method of pipe encapsulating structure 100h, 100i structure.
Fig. 5 illustrates for a kind of flow of the preparation method of package structure for LED of another embodiment of the present invention
Figure.Fig. 5 is refer to, and coordinates the schema with reference to Fig. 4 A to 4C simultaneously.Package structure for LED according to the present embodiment
Preparation method, first, there is provided a carrier 110a by step S20.Herein, carrier 110a material is, for example, ceramics, macromolecule
Polymer or metal, wherein when carrier 110a material is metal, carrier 110a can be a copper base or a metal core
Koan printed circuit board (Metal Core Printed Circuit Board, MCPCB), but be not limited thereto.
Then, step S21, configures multiple light-emitting diode chip for backlight unit 120a on carrier 110, and the light emitting diode
Chip 120a is electrically connected to carrier 110a.Herein, these light-emitting diode chip for backlight unit 120a is with holding through face-down bonding technique
Device 110a is carried to be electrically connected with.Certainly, in other embodiments not illustrated, these light-emitting diode chip for backlight unit are through routing engagement
Technology is electrically connected with carrier.
Then, step S22, forms a circular retaining wall 130c on carrier 110a, wherein circular retaining wall 130c is around hair
Luminous diode chip 120a.
Then, step S23, forms multiple bar shaped barricade 140c (or 140d) on carrier 110a.Bar shaped barricade 140c
(or 140d) connects circular retaining wall 130c, and bar shaped barricade 140c (or 140d) and circular retaining wall 130c is fixed on carrier 110a
Justice goes out multiple clathrate groove C, and light-emitting diode chip for backlight unit 120a is arranged in clathrate groove C.Herein, bar shaped barricade 140c
The height H4 (or H5) of (or 140d) is same as (or less than) circular retaining wall 130c height H3.Circular retaining wall 130c material with
Bar shaped barricade 140c (or 140d) material has not extinction and the characteristic with reflection function, e.g. silicon, silica, nitridation
Boron, rubber, high-molecular organic material or metal.In the present embodiment, circular retaining wall 130c material can with bar shaped barricade 140c (or
Material 140d) is identical or different, is not any limitation as in this.Herein, circular retaining wall 130c is a continuous circular retaining wall, and
Bar shaped barricade 140c (or 140d) can continuously bar shaped barricade and discrete bar shaped barricade combination.
It should be noted that, circular retaining wall 130c and bar shaped barricade 140c (or 140d) shape is not limited in the present embodiment
Into order.That is, can be initially formed after circular retaining wall 130c, bar shaped barricade 140c (or 140d) is re-formed；Either, it is annular
After barricade 130c and carrier 110a is integrally formed, bar shaped barricade 140c (or 140d) is re-formed on carrier 110a；Or
It is to be initially formed after bar shaped barricade 140c (or 140d) and carrier 110a be integrally formed, re-forms circular retaining wall 130c, in this simultaneously
It is not any limitation as.In addition, forming circular retaining wall 130c and bar shaped barricade 140c (or 140d) method may include to pass through point gum machine
(not illustrating) (now, circular retaining wall 130c and bar shaped barricade 140c (or 140d) material is, for example, rubber to carry out dispensing program
Glue) or pass through photoetching, etching and galvanizing process to form (now, circular retaining wall 130c and bar shaped barricade 140c (or 140d)
Material be, for example, metal).
Afterwards, step S24, one fluorescent colloid 150 of filling (configures light emitting diode in a carrier 110a supporting region
Chip 120a region) in, wherein fluorescent colloid 150 fills up clathrate groove C and at least covering luminousing diode chip
120a.Fluorescent colloid bag 150 includes at least one phosphor powder 152 and at least one colloid 154 is mixed, and phosphor powder 152 dissipates
It is distributed in colloid 154.It should be noted that, the method for filling fluorescent colloid 150 is, for example, to pass through point gum machine (not illustrating) to carry out
Dispensing program.During for dispensing glue, the settling velocity of phosphor powder 152 in fluorescent colloid 150 is inconsistent, therefore generally
Can be in fluorescent colloid 150 doped with antiprecipitant, such as silica (SiO2) (not illustrating).Furthermore, in fluorescent colloid 150
Also a light diffusing agent (not illustrating) can be dosed to adjust the color or equal for the light that package structure for LED 100a is sent
The optical effects such as evenness.
More particularly, in the present embodiment, when these bar shaped barricades 140c height H4 is same as circular retaining wall 130c
Height H3 when, filling fluorescent colloid 150 the step of carrier 110a supporting region, it may include：By fluorescent colloid 150 sequentially
Clathrate groove C is inserted, makes a upper surface 151 and ring-type barricade 130a of fluorescent colloid 150 top surface 131 and each bar shaped
A barricade 140a top surface 141 is highly identical, refer to Fig. 4 A.In another embodiment, when these bar shaped barricades 140d height
When spending height H3s of the H5 less than circular retaining wall 130c, filling fluorescent colloid 150 is the step of carrier 110a supporting region, bag
Include：Fluorescent colloid 150 is arbitrarily inserted to the clathrate groove C of a part, subsequent step S23 centrifugation journey is then directly carried out
Sequence, so that fluorescent colloid 150 flows to fill up clathrate groove C to both sides, and fluorescent colloid 150 is covered in each bar shaped barricade
A 140d top surface 143, refer to Fig. 4 C.
Then, step S25, carry out a centrifuging process so that the phosphor powder 152 in fluorescent colloid 150 fall to these light
On diode chip for backlight unit 120a surface.Herein, carrying out centrifuging process is realized using centrifuge (not illustrating), through centrifuge
Centrifugal force the phosphor powder 152 being scattered in colloid 154 is fallen on the surface of these light-emitting diode chip for backlight unit 120, can keep away
Exempt from excessive phosphor powder 152 to hoard to carrier 110a idle space and produce the dizzy phenomenon of side wall Huang.
Finally, step S26, places a baking box and carries out a baking program to solidify fluorescent colloid 150, and completes light-emitting diodes
Pipe encapsulating structure 100f, 100g, 100h, 100i making.
Because the present embodiment is first to have carried out after centrifuging process, that is, it is distributed in the phosphor powder 152 in fluorescent colloid 150
On these light-emitting diode chip for backlight unit 120a surface, baking program is just carried out.Fill to enter after fluorescent colloid compared to known
For row baking program, package structure for LED 100f, 100g, 100h, 100i of the present embodiment chromaticity coordinates are difficult
Skew or increase (elongation), you can more concentrate, can be showed with preferably colourity.Furthermore, as circular retaining wall 130c and these
When strip barricade 140c has identical height, when centrifuging process is carried out, the phenomenon that can be prevented effectively from recessed glue is produced.In addition,
The bubble in fluorescent colloid 150 can also be departed from through centrifuging process, and make formed package structure for LED 100f,
100g, 100h, 100i have preferably optical appearance.
In summary, light-emitting diode chip for backlight unit of the invention can be electrically connected with using face-down bonding technique with carrier, therefore
Can be in configuring more light-emitting diode chip for backlight unit on carrier under unit area, i.e., can be effective with more number of chips
Improve the emitting brightness of package structure for LED.Furthermore, because the package structure for LED of the present embodiment has the
The collocation design of one circular retaining wall and the second circular retaining wall, circular retaining wall, the collocation design of circular retaining wall and bar shaped barricade, and firefly
The phosphor powder of optical cement body is distributed across on the surface of light-emitting diode chip for backlight unit.Therefore, the periphery of package structure for LED is not
Excessive phosphor powder can be assembled, you can the idle space on carrier is reduced, so that more phosphor powder is distributed in light-emitting diodes
On the surface of die, therefore side wall can be prevented effectively from and produce yellow dizzy phenomenon.Further, since first annular barricade, the second annular gear
Wall, circular retaining wall and bar shaped barricade all have not extinction and the characteristic with reflection function, therefore can reflect and scatter luminous two
Coloured light produced by pole pipe chip, can effectively improve the emitting brightness of package structure for LED.In short, the hair of the present invention
Preferably optical appearance can be presented in optical diode package structure.
The phosphor powder being scattered in the colloid of fluorescent colloid is settled down in addition, the present invention is the centrifugal force for passing through centrifuge
On the surface of light-emitting diode chip for backlight unit, consequently, it is possible to which phosphor powder can be evenly distributed in the surface of light-emitting diode chip for backlight unit, and avoid
Phosphor powder hoards the uneven thickness one of distribution, and influences optical effect, or because excessive phosphor powder hoards leaving unused to carrier
Space and produce the dizzy phenomenon of side wall Huang.Furthermore, because the present embodiment is first to have carried out after centrifuging process, that is, made in fluorescent colloid
Phosphor powder be distributed on the surface of light-emitting diode chip for backlight unit, just carry out baking program.Fluorescent colloid has been filled compared to known
Carry out afterwards for baking program, the chromaticity coordinates of package structure for LED of the invention is difficult to offset or increased and (draws
It is long), you can more concentrate, can be showed with preferably colourity.In addition, when circular retaining wall and strip barricade have identical height
When, when centrifuging process is carried out, the phenomenon that can be prevented effectively from recessed glue is produced.In addition, also can be by fluorescent colloid through centrifuging process
In bubble depart from, and make formed package structure for LED that there is preferably optical appearance.
It is noted that in above-mentioned the present embodiment, barricade can be a closed circular or a non-close ring-type, wherein sealing
It is loop-like be, for example, quadrangle, circle, ellipse, egg type, star or other polygons, rather than closed circular be, for example, arc,
Linear or random change curve shape.Particularly, the shape of barricade can respective leds chip external form, imply that the shape of barricade
The external form conformal (conformal) of shape and light emitting diode is set.
In the above-described embodiments, first annular barricade is a continuous circular retaining wall, highly can be contour or not contour
Change.
In the above-described embodiments, the second circular retaining wall is a continuous circular retaining wall, highly can be contour or not contour
Change.
In the above-described embodiments, first annular barricade can be discontinuous circular retaining wall, highly can be contour or not
Etc. High variation.In one embodiment, the second circular retaining wall can be discontinuous circular retaining wall, highly can be it is contour or
High variation.
In the above-described embodiments, first annular barricade can be reflecting material, or the coating of non-reflective materials surface is instead
Penetrate material.
In the above-described embodiments, the second circular retaining wall can be reflecting material, or the coating of non-reflective materials surface is instead
Penetrate material.
In the above-described embodiments, phosphor powder concentration distribution situation can be with light-emitting diode chip for backlight unit height, first annular gear
Wall height, the second circular retaining wall height, distance between light-emitting diode chip for backlight unit and first annular barricade, first annular barricade and the
Distance between second ring barricade and change.
In the above-described embodiments, phosphor powder concentration gradually increase from fluorescent colloid surface toward light-emitting diode chip for backlight unit surface or
Reduce.
In the above-described embodiments, phosphor powder concentration from light-emitting diode chip for backlight unit surface toward light-emitting diode chip for backlight unit side gradually
Increase or decrease.
In the above-described embodiments, when phosphor powder concentration is gradually increased from fluorescent colloid surface toward light-emitting diode chip for backlight unit surface
Or when reducing, phosphor powder concentration is gradually increased or decreased from light-emitting diode chip for backlight unit surface toward light-emitting diode chip for backlight unit side.
Although the present invention is disclosed as above with preferred embodiment, so it is not limited to the present invention, any this area skill
Art personnel, without departing from the spirit and scope of the present invention, when a little modification can be made and perfect, therefore the protection model of the present invention
Enclose when by being defined that claims are defined.
Claims (21)
1. a kind of package structure for LED, including：
One carrier, with a supporting region, and a peripheral region for surrounding the supporting region；
Multiple light-emitting diode chip for backlight unit, are configured in the supporting region of the carrier, and are electrically connected to the carrier；
One first annular barricade, is configured in the peripheral region of the carrier, and around those light-emitting diode chip for backlight unit；
One second circular retaining wall, is configured at the inner side of the first annular barricade, and around those light-emitting diode chip for backlight unit, wherein should
The height of second circular retaining wall is less than the height of the first annular barricade, and higher than the height of the light-emitting diode chip for backlight unit；And
Colloid, is configured on the carrier and at least covers the light-emitting diode chip for backlight unit and second circular retaining wall；
Wherein the first annular barricade and second circular retaining wall all have not extinction and the characteristic with reflection function.
2. package structure for LED as claimed in claim 1, it is characterised in that the first annular barricade and the second annular
There is a spacing between barricade, and define on the carrier groove.
3. package structure for LED as claimed in claim 1, it is characterised in that the carrier and the first annular barricade
Or second circular retaining wall is integrally formed.
4. package structure for LED as claimed in claim 1, it is characterised in that the first annular barricade or second ring
Shape barricade is a discontinuous circular retaining wall.
5. package structure for LED as claimed in claim 1, in addition to：
Multiple bar shaped barricades, are configured on the carrier and connect second circular retaining wall, wherein the bar shaped barricade with this
Second ring barricade defines multiple clathrate grooves on the carrier, and the light-emitting diode chip for backlight unit is arranged at the grid
In shape groove.
6. a kind of package structure for LED, including：
One carrier, with a supporting region, and a peripheral region for surrounding the supporting region；
At least one light-emitting diode chip for backlight unit, is configured in the supporting region of the carrier, and is electrically connected to the carrier；
One first annular barricade, is configured in the peripheral region of the carrier, and around the light-emitting diode chip for backlight unit；
One second circular retaining wall, is configured at the inner side of the first annular barricade, second circular retaining wall and the first annular barricade
Between there is a gap, and define on carrier a groove；And
One fluorescent colloid, is configured on the carrier and at least covers the light-emitting diode chip for backlight unit, and wherein the fluorescent colloid includes
At least one phosphor powder and at least one colloid, and the phosphor powder is distributed in the gap.
7. package structure for LED as claimed in claim 6, it is characterised in that the carrier and the first annular barricade
Or second circular retaining wall is integrally formed.
8. package structure for LED as claimed in claim 6, it is characterised in that the first annular barricade or second ring
Shape barricade is a discontinuous circular retaining wall.
9. package structure for LED as claimed in claim 6, it is characterised in that the height of each bar shaped barricade is less than the ring
The height of shape barricade.
10. package structure for LED as claimed in claim 6, in addition to：
Multiple bar shaped barricades, are configured on the carrier and connect second circular retaining wall, wherein the bar shaped barricade with this
Second ring barricade defines multiple clathrate grooves on the carrier, and the light-emitting diode chip for backlight unit is arranged at the grid
In shape groove.
11. the package structure for LED as described in any one of claim 1 to 10, it is characterised in that each light-emitting diodes
Die is to be electrically connected with through face-down bonding technique with the carrier.
12. the package structure for LED as described in any one of claim 1 to 10, it is characterised in that each light-emitting diodes
Die is to be electrically connected with through wire bonding technologies with the carrier.
13. the package structure for LED as described in any one of claim 1 to 10, it is characterised in that the carrier
Material includes ceramics, high molecular polymer or metal.
14. the package structure for LED as described in any one of claim 1 to 5, it is characterised in that the first annular gear
The material of wall and the material of second circular retaining wall include silicon, silica, boron nitride, high-molecular organic material or metal.
15. a kind of preparation method of package structure for LED, including：
One carrier is provided, wherein the carrier have a supporting region, and one surround the supporting region peripheral region；
At least one light-emitting diode chip for backlight unit is configured in the supporting region of the carrier, and the light-emitting diode chip for backlight unit electrically connects
It is connected to the carrier；
A first annular barricade is formed in the peripheral region of the carrier；
One second circular retaining wall is formed in the peripheral region of the carrier, second circular retaining wall surrounds the light-emitting diodes tube core
Piece and the inner side for being arranged at the first annular barricade, have between one wherein between the first annular barricade and the second circular retaining wall
Away from, and define on the carrier groove；
A fluorescent colloid is filled in, at least to cover the light-emitting diodes tube core, wherein the fluorescent colloid is included at least on the carrier
A kind of phosphor powder and at least one colloid are mixed, and the phosphor powder is scattered in colloid Nei And and is filled in the groove；
And place the baking program of baking box progress one.
16. the preparation method of package structure for LED as claimed in claim 15, it is characterised in that the carrier is with being somebody's turn to do
First annular barricade or second circular retaining wall are integrally formed.
17. the preparation method of package structure for LED as claimed in claim 15, it is characterised in that the first annular gear
Wall or second circular retaining wall are discontinuous circular retaining wall.
18. the preparation method of the package structure for LED as described in any one of claim 15 to 17, it is characterised in that
Each light-emitting diode chip for backlight unit is configured to be electrically connected with the carrier through face-down bonding technique in the method system on the carrier.
19. the preparation method of the package structure for LED as described in any one of claim 15 to 17, it is characterised in that
Each light-emitting diode chip for backlight unit is configured to be electrically connected with the carrier through wire bonding technologies in the method system on the carrier.
20. the preparation method of the package structure for LED as described in any one of claim 15 to 17, it is characterised in that
The material of the carrier includes ceramics, high molecular polymer or metal.
21. the preparation method of the package structure for LED as described in any one of claim 15 to 17, it is characterised in that
The material of the first annular barricade and the material of second circular retaining wall include silicon, silica, boron nitride, high-molecular organic material
Or metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710706738.3A CN107293536A (en) | 2012-06-13 | 2012-06-13 | Package structure for LED and preparation method thereof |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710706738.3A CN107293536A (en) | 2012-06-13 | 2012-06-13 | Package structure for LED and preparation method thereof |
| CN201210194908.1A CN103489984B (en) | 2012-06-13 | 2012-06-13 | Package structure for LED and preparation method thereof |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210194908.1A Division CN103489984B (en) | 2012-06-13 | 2012-06-13 | Package structure for LED and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107293536A true CN107293536A (en) | 2017-10-24 |
Family
ID=49830071
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710706738.3A Withdrawn CN107293536A (en) | 2012-06-13 | 2012-06-13 | Package structure for LED and preparation method thereof |
| CN201210194908.1A Expired - Fee Related CN103489984B (en) | 2012-06-13 | 2012-06-13 | Package structure for LED and preparation method thereof |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210194908.1A Expired - Fee Related CN103489984B (en) | 2012-06-13 | 2012-06-13 | Package structure for LED and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN107293536A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108447969A (en) * | 2018-05-15 | 2018-08-24 | 江西艾立特光电科技有限公司 | A kind of light emitting diode |
| CN110249438A (en) * | 2018-01-09 | 2019-09-17 | 首尔伟傲世有限公司 | Light emitting device |
| CN113140552A (en) * | 2020-01-20 | 2021-07-20 | 光宝光电(常州)有限公司 | Light emitting diode packaging structure |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104835895B (en) * | 2014-02-07 | 2017-12-01 | 弘凯光电(深圳)有限公司 | LED-mounted device |
| WO2019048066A1 (en) * | 2017-09-11 | 2019-03-14 | Osram Opto Semiconductors Gmbh | Optoelectronic device and method for producing an optoelectronic decvice |
| CN113287207A (en) * | 2018-09-28 | 2021-08-20 | 江苏新云汉光电科技有限公司 | LED lamp and lumen increasing method thereof |
| CN110444571B (en) * | 2019-08-12 | 2022-07-05 | 京东方科技集团股份有限公司 | Display panel and preparation method thereof |
| CN111048653A (en) * | 2019-12-26 | 2020-04-21 | 深圳市大柏光电子科技有限公司 | Process for improving brightness and output availability of LED lamp beads |
| CN114442371B (en) * | 2022-01-18 | 2023-06-02 | 武汉华星光电技术有限公司 | Display backboard and display device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0927643A (en) * | 1995-07-13 | 1997-01-28 | Stanley Electric Co Ltd | Light-receiving/light-emitting element |
| CN1426604A (en) * | 2000-04-26 | 2003-06-25 | 奥斯兰姆奥普托半导体有限责任公司 | Radiation emitting semiconductor component with luminescence-converting element |
| CN1745482A (en) * | 2003-01-30 | 2006-03-08 | 奥斯兰姆奥普托半导体有限责任公司 | Semiconductor component emitting and/or receiving electromagnetic radiation, and housing base for such a component |
| CN101147270A (en) * | 2005-03-24 | 2008-03-19 | 京瓷株式会社 | Light emitting element storing package, light emitting device and lighting apparatus |
| CN102299231A (en) * | 2010-06-23 | 2011-12-28 | 景德镇正宇奈米科技有限公司 | Light emitting diode (LED) packaging structure and manufacturing method thereof |
| CN102376854A (en) * | 2010-08-09 | 2012-03-14 | Lg伊诺特有限公司 | Light emitting device and lighting system having the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101963288A (en) * | 2009-07-24 | 2011-02-02 | 柏友照明科技股份有限公司 | Light-emitting structure capable of improving light-emitting efficiency and controlling emergent angle and manufacture method thereof |
| CN102376855B (en) * | 2010-08-09 | 2015-08-19 | Lg伊诺特有限公司 | Luminescent device and the illuminator with luminescent device |
| TWI445216B (en) * | 2010-11-17 | 2014-07-11 | Harvatek Corp | Led package structure with a deposited-type phosphor layer and method for making the same |
-
2012
- 2012-06-13 CN CN201710706738.3A patent/CN107293536A/en not_active Withdrawn
- 2012-06-13 CN CN201210194908.1A patent/CN103489984B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0927643A (en) * | 1995-07-13 | 1997-01-28 | Stanley Electric Co Ltd | Light-receiving/light-emitting element |
| CN1426604A (en) * | 2000-04-26 | 2003-06-25 | 奥斯兰姆奥普托半导体有限责任公司 | Radiation emitting semiconductor component with luminescence-converting element |
| CN1745482A (en) * | 2003-01-30 | 2006-03-08 | 奥斯兰姆奥普托半导体有限责任公司 | Semiconductor component emitting and/or receiving electromagnetic radiation, and housing base for such a component |
| CN101147270A (en) * | 2005-03-24 | 2008-03-19 | 京瓷株式会社 | Light emitting element storing package, light emitting device and lighting apparatus |
| CN102299231A (en) * | 2010-06-23 | 2011-12-28 | 景德镇正宇奈米科技有限公司 | Light emitting diode (LED) packaging structure and manufacturing method thereof |
| CN102376854A (en) * | 2010-08-09 | 2012-03-14 | Lg伊诺特有限公司 | Light emitting device and lighting system having the same |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110249438A (en) * | 2018-01-09 | 2019-09-17 | 首尔伟傲世有限公司 | Light emitting device |
| CN110249438B (en) * | 2018-01-09 | 2024-04-02 | 首尔伟傲世有限公司 | Light emitting device |
| CN108447969A (en) * | 2018-05-15 | 2018-08-24 | 江西艾立特光电科技有限公司 | A kind of light emitting diode |
| CN113140552A (en) * | 2020-01-20 | 2021-07-20 | 光宝光电(常州)有限公司 | Light emitting diode packaging structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103489984B (en) | 2017-09-12 |
| CN103489984A (en) | 2014-01-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103489984B (en) | Package structure for LED and preparation method thereof | |
| JP5810758B2 (en) | Light emitting device | |
| US9263647B2 (en) | Light emitting diode package structure and manufacturing method thereof | |
| JP6079629B2 (en) | Light emitting device | |
| US8890297B2 (en) | Light emitting device package | |
| EP2525419B1 (en) | Light emitting device package and manufacturing method thereof | |
| KR100693463B1 (en) | Light diffusion type light emitting diode | |
| KR20120015362A (en) | Solid state lighting device | |
| KR20100058779A (en) | Light emitting diode package and manufacturing method thereof | |
| US20110278610A1 (en) | Package structure and package process of light emitting diode | |
| JP2007081090A (en) | White light emitter and lighting device | |
| JP2009016689A (en) | Illuminator | |
| CN103545431B (en) | Light-emitting device | |
| JP2006140197A (en) | Method of manufacturing led | |
| JP2008288412A (en) | Led light-emitting device | |
| JP2007043074A (en) | Luminaire | |
| CN211858676U (en) | LED packaging device | |
| JP2014086696A (en) | Light-emitting device | |
| CN103840057B (en) | Light emitting diode and manufacture method thereof | |
| JP2006286896A (en) | Light emitting diode device | |
| CN105336835A (en) | LED packaging structure and packaging method thereof | |
| CN110890452A (en) | LED packaging device and manufacturing method | |
| KR20090051508A (en) | White light emitting diode and fabrication method thereof | |
| CN104676442B (en) | A kind of LED light source component of intelligent lighting COB | |
| TWI811723B (en) | Light emitting device package structure and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20171024 |