CN110994361B - 火花塞 - Google Patents
火花塞 Download PDFInfo
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- CN110994361B CN110994361B CN201910932830.0A CN201910932830A CN110994361B CN 110994361 B CN110994361 B CN 110994361B CN 201910932830 A CN201910932830 A CN 201910932830A CN 110994361 B CN110994361 B CN 110994361B
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- 239000012212 insulator Substances 0.000 claims abstract description 54
- 239000013078 crystal Substances 0.000 claims abstract description 44
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 31
- 238000009826 distribution Methods 0.000 claims abstract description 31
- 239000000203 mixture Substances 0.000 abstract description 5
- 238000002485 combustion reaction Methods 0.000 abstract description 4
- 239000000567 combustion gas Substances 0.000 abstract description 3
- 239000000446 fuel Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 43
- 239000002245 particle Substances 0.000 description 24
- 239000002994 raw material Substances 0.000 description 14
- 239000011230 binding agent Substances 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 239000012752 auxiliary agent Substances 0.000 description 7
- 239000002904 solvent Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
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- 238000001878 scanning electron micrograph Methods 0.000 description 5
- 229910052593 corundum Inorganic materials 0.000 description 4
- 230000001186 cumulative effect Effects 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 description 4
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- 229910052788 barium Inorganic materials 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229920000084 Gum arabic Polymers 0.000 description 1
- 241000978776 Senegalia senegal Species 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 235000010489 acacia gum Nutrition 0.000 description 1
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- 239000002518 antifoaming agent Substances 0.000 description 1
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- 229910001597 celsian Inorganic materials 0.000 description 1
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- 238000005245 sintering Methods 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
本发明提供具有能够提高机械强度的绝缘体的火花塞。火花塞是安装于内燃机、点燃混合气的装置。火花塞具备由氧化铝基烧结体形成的绝缘体。绝缘体为暴露于混合气、燃烧气体的构件。绝缘体以氧化物换算计含有90重量%以上的Al成分。绝缘体的晶粒的平均粒径为1.5μm以下,并且晶粒的粒径分布的标准偏差为1.2μm以下。
Description
技术领域
本发明涉及火花塞,特别涉及能够提高机械强度的火花塞。
背景技术
内燃机所使用的火花塞例如具备由以氧化铝作为主成分的氧化铝基烧结体形成的绝缘体(例如专利文献1和2)。在专利文献1和2所公开的技术中,通过设定CaO、BaO等助剂与氧化铝的比率,从而主要实现耐电压性能的改善。
现有技术文献
专利文献
专利文献1:日本特开2000-313657号公报
专利文献2:日本特开2011-70929号公报
发明内容
发明所要解决的问题
然而,对于上述技术,要求提高绝缘体的机械强度。
本发明是为了应对该要求而完成的,其目的在于提供具有能够提高机械强度的绝缘体的火花塞。
用于解决问题的方法
为了达成该目的,本发明的火花塞具备由氧化铝基烧结体形成的绝缘体,绝缘体以氧化物换算计含有90重量%以上的Al成分,晶粒的平均粒径为1.5μm以下,并且晶粒的粒径分布的标准偏差为1.2μm以下。
发明效果
根据项1记载的火花塞,绝缘体的晶粒的平均粒径为1.5μm以下,并且粒径分布的标准偏差为1.2μm以下,因此能够分散对绝缘体施加载荷时的应力。能够抑制应力集中于特定的晶粒而产生的裂缝,因此能够提高绝缘体的机械强度。
根据项2记载的火花塞,绝缘体的晶粒的粒径分布的标准偏差为1.0μm以下,因此能够进一步抑制应力集中于特定的晶粒而产生的裂缝。因此,能够进一步提高绝缘体的机械强度。
根据项3记载的火花塞,绝缘体的晶粒的平均粒径为1.0μm以下,因此能够进一步抑制应力集中于特定的晶粒而产生的裂缝。因此,能够进一步提高绝缘体的机械强度。
附图说明
图1为本发明的一个实施方式中的火花塞的单侧截面图。
标号说明
10 火花塞
11 绝缘体
具体实施方式
以下,参照附图对本发明的优选实施方式进行说明。图1为本发明的一个实施方式中的火花塞10的以轴线O为界线的单侧截面图。图1中,将纸面下侧称为火花塞10的前端侧,将纸面上侧称为火花塞10的后端侧。如图1所示,火花塞10具备绝缘体11、中心电极15和主体配件17。
绝缘体11为由机械特性、高温下的绝缘性优良的氧化铝基烧结体形成的大致圆筒状的构件。绝缘体11中,形成有沿轴线O贯通的轴孔12。绝缘体11中,在外周面形成有作为朝向前端侧的倾斜面的第1卡定部13、以及作为朝向后端侧的倾斜面的第2卡定部14。
中心电极15是插入至轴孔12中并且保持于绝缘体11的前端侧的金属制(例如镍基合金制)的棒状的电极。端子配件16为连接高压电缆(未图示)的棒状的构件,由具有导电性的金属材料(例如低碳钢等)来形成。端子配件16安装于绝缘体11,端子配件16的前端侧配置于轴孔12内。端子配件16在轴孔12内与中心电极15电连接。
主体配件17为固定于内燃机的螺纹孔(未图示)的大致圆筒状的构件,由具有导电性的金属材料(例如低碳钢等)来形成。主体配件17从轴线O方向的两侧夹持绝缘体11的第1卡定部13和第2卡定部14,从外周侧保持绝缘体11。接地电极18为接合于主体配件17的金属制(例如镍基合金制)的棒状的构件。接地电极18隔着火花间隙与中心电极15对置。
绝缘体11以氧化铝(Al2O3)作为主体,除了氧化铝以外,还含有包含Si、Mg、Ba、Ca和稀土元素等的氧化物中的1种或者多种的助剂。构成绝缘体11的氧化铝基烧结体以换算成Al2O3计含有90重量%以上的Al成分。氧化铝基烧结体所含有的Al成分优选为98重量%以下。通过使氧化铝基烧结体含有90重量%以上的Al成分,从而能够确保烧结性的同时获得良好的耐电压性能。Al成分形成Al2O3、BaAl12O19、BaAl2Si2O8等的结晶相,也存在于晶粒、晶界。
助剂以氧化物、离子等的形式存在于氧化铝基烧结体的晶粒、晶界。助剂通常在烧结时熔融而形成液相,实现促进烧结体的致密化的功能。助剂中,也有实现抑制氧化铝的异常晶粒生长、确保绝缘体的机械强度的功能的物质。
氧化铝基烧结体可以在不损害本发明的目的的范围内,含有不可避免的杂质等其它元素。作为其它元素,可举出Na、S、N、B、Ti、Mn、Ni、K、Fe等。
接下来,对于绝缘体11和火花塞10的制造方法具体地进行说明。作为绝缘体11的原料粉末,将作为主成分的Al化合物粉末和助剂粉末、粘合剂以及溶剂进行混合,制备浆料。可以根据需要添加增塑剂、消泡剂、分散剂等添加物。各原料粉末的混合优选以能够使原料粉末的混合状态变得均匀、并且将所得的烧结体高度地致密化的方式,经8小时以上来进行。
Al化合物粉末只要是通过烧成而转化为氧化铝的化合物,就没有特别限制,通常使用氧化铝粉末。Al化合物粉末实际上有时含有Na成分作为不可避免的杂质,因此优选使用高纯度的Al化合物粉末,例如,Al化合物粉末中的纯度优选为99.5%以上。
从获得良好的机械强度的方面出发,优选制备成:在将烧成后的氧化铝基烧结体的质量(氧化物换算)设为100质量%时,Al化合物粉末以氧化物换算计达到90质量%以上且98质量%以下。
助剂粉末可举出例如各元素的氧化物、其复合氧化物、氢氧化物、碳酸盐、氯化物、硫酸盐、硝酸盐等各种无机系粉末、或天然矿物的粉末等。需要说明的是,在使用氧化物以外的粉末作为助剂粉末等的情况下,其使用量以换算成氧化物时的质量%来掌握。助剂粉末等的纯度和粒径分布与Al化合物粉末的情况基本上相同。
为了获得致密的氧化铝基烧结体,Al化合物粉末和助剂粉末优选使用粒径的累积分布50体积%时的粒径(中值粒径,以下称为“D50”)为0.4~1.5μm、累积分布(筛下)90体积%时的粒径(以下称为“D90”)为1.0~3.5μm的粉末。该粒径是通过激光衍射/散射式粒径分布测定装置(堀场制作所制LA950)进行测定而得到的值。
粘合剂只要能够使原料粉末的成形性变得良好即可,作为这样的粘合剂,可举出亲水性粘合剂。作为亲水性粘合剂,可举出例如聚乙烯醇、水溶性丙烯酸类树脂、阿拉伯树胶、糊精等。这些粘合剂可以单独使用1种,也可以并用2种以上。
粘合剂相对于原料粉末100质量份,优选以0.1~7质量份的比例来配合,特别优选以1~5质量份的比例来配合。
溶剂只要能够使原料粉末分散即可,作为这样的溶剂,可举出水、醇等。这些溶剂可以单独使用1种,也可以并用2种以上。溶剂相对于原料粉末100质量份,优选为40~120质量份,特别优选为50~100质量份。
将原料粉末、粘合剂、溶剂等混合而得的浆料通过喷雾干燥法等进行喷雾干燥而制备成球状的造粒物。该造粒物的平均粒径优选为30~200μm,特别优选为50~150μm。该平均粒径是通过激光衍射/散射式粒径分布测定装置(堀场制作所制LA950)进行测定而得到的值。
接下来,将该造粒物利用例如橡胶压块机或压模机等进行压制成形而获得成形体。所得的成形体通过将其外表面利用树脂胶结砂轮等进行磨削而调整形状。需要说明的是,成形体的成形方法不限于压制成形,当然可以采用注射成形等其它成形方法。
将被整形为期望形状的成形体在大气气氛下,在4小时以内升温至1450℃以上的最高温度,在最高温度下烧成1~1.5小时之后,进行冷却,由此获得氧化铝基烧结体。抑制氧化铝的异常晶粒生长,确保所得的氧化铝基烧结体(绝缘体11)的机械强度。
另一方面,将Ni基合金等电极材料加工成规定的形状和尺寸来制作中心电极13和接地电极16。在通过塑性加工等形成为规定的形状和尺寸的主体配件15上,通过电阻焊接等接合接地电极16。在绝缘体11上通过公知的方法来组装中心电极13和端子配件14,在接合有接地电极16的主体配件15上组装绝缘体11。将接地电极16的前端部向中心电极13侧弯折,使接地电极16的前端与中心电极13的前端对置,制造火花塞10。
绝缘体11制备成晶粒的平均粒径为1.5μm以下、并且粒径分布的标准偏差为1.2μm以下。晶粒的粒径通过截距法来求出。详细情况进行后述。
绝缘体11的晶粒的平均粒径和粒径分布的标准偏差可以通过Al化合物粉末和助剂粉末的粒径分布、助剂粉末的配合量等来进行控制。如果粉末细小或助剂粉末的配合量多,则氧化铝基烧结体易于产生晶粒生长。通过使晶粒的平均粒径为1.5μm以下并且使粒径分布的标准偏差为1.2μm以下,从而能够分散对绝缘体11施加载荷时的应力。能够抑制应力集中于特定的晶粒而产生的裂缝,因此能够提高绝缘体11的机械强度。
需要说明的是,如果绝缘体11的晶粒的粒径分布的标准偏差为1.0μm以下,则能够提高应力分散的效果,进一步提高绝缘体11的强度,因此优选。此外,如果绝缘体11的晶粒的平均粒径为1.0μm以下,则同样地能够提高应力分散的效果,进一步提高绝缘体11的强度,因此优选。如果使绝缘体11的晶粒的粒径分布的标准偏差的下限为0.2μm,则能够使用于减小标准偏差的工序管理简易,并且实现粒径相对大的晶粒阻止裂缝的伸展的功能,能够确保韧性,因此能够进一步提高机械强度。
绝缘体11的粒径由绝缘体11之中比第1卡定部13更靠前端侧的部分的研磨截面来算出。比第1卡定部13更靠前端侧的部分在火花塞10安装于内燃机(未图示)时,暴露于燃烧气体。比第1卡定部13更靠前端侧的部分由于燃烧气体的压力而易被施加弯曲载荷,存在折损等的危险,因此通过提高该部分的机械强度,从而能够抑制绝缘体11的折损等不良状况的发生。
实施例
通过实施例来进一步详细地说明本发明,但本发明不限定于该实施例。
(氧化铝基烧结体的制造)
作为原料粉末,准备各种粒径分布的氧化铝粉末和助剂粉末(SiO2粉末、以及Ba、Ca、Mg的碳酸盐粉末等)。将这些粉末以各种比例进行混合而得的原料粉末、作为粘合剂的聚乙烯醇、以及作为溶剂的水进行混合,从而制备出各种浆料。
将所得的浆料通过喷雾干燥法等进行喷雾干燥,制备出平均粒径为约100μm的球状的造粒物。通过将所得的造粒物利用压模机进行成型,从而获得截面为长方形的棱柱形状的各种成形体。将该成形体在大气气氛下,将温度1450℃~1650℃的范围内的烧成时间设定为1~8小时,获得烧结体。将所得的烧结体利用平面磨床等进行加工,制成JIS R1601:2008所规定的厚度3mm、宽度4mm的试验片。以下,对于样品(烧结体)的评价方法进行说明。
(烧结体的组成)
通过荧光X射线分析或化学分析来检测样品1~23中的烧结体的组成、即各成分的含有率。以将检测到的各成分的氧化物换算的质量的合计设为100重量%时的质量比例(%),算出Al2O3以外的助剂和Al2O3的含有率。
(原料粉末的粒度分布)
使用激光衍射/散射式粒径分布测定装置(堀场制作所制LA950),测定原料粉末(Al化合物粉末和助剂粉末)的累积分布50体积%时的粒径(D50)和累积分布(筛下)90体积%时的粒径(D90)。
(晶粒的平均粒径和标准偏差)
关于所得的烧结体,将截面进行镜面研磨之后,进行热蚀刻处理。也可以代替热蚀刻处理而进行化学蚀刻处理。使用SEM,观察进行了蚀刻处理的截面。SEM的加速电压设为15kV,工作距离设为10~12mm。将1个视野的大小设为20μm×15μm的矩形区域的SEM图像随机地拍摄10个视野。
将所得的SEM图像利用图像解析软件(Soft Imaging System GmbH公司制Analysis Five)进行二值化。二值化的阈值如下进行设定。首先,确认SEM图像之中的二次电子像和反射电子像,沿反射电子像中的深色的边界(相当于晶界)划线,使晶界的位置变得明确。接下来,在保持晶界的边缘的同时使反射电子像的图像变得平滑。接着,由反射电子像的图像制作出横轴取亮度、纵轴取频率的图。获得多峰性(峰为2个)的图,因此将2个峰的中间点的亮度设为二值化的阈值。
接着,通过截距法来求出平均粒径。首先,选择与SEM图像的矩形区域的2个对角线的至少一者交叉的晶粒,对于选择的各个晶粒,求出其最大直径并将其设为长径D1。最大直径为将该晶粒的外径从所有方向测定时的最大值。而且,将通过长径D1的中点且与长径D1正交的直线上的晶粒的外径设为短径D2。将长径D1与短径D2的平均值设为该晶粒的表观粒径。将与对角线的至少一者交叉的n个晶粒的表观粒径的平均值设为该视野中的平均粒径。此外,将n个晶粒的表观粒径的分布的标准偏差设为该视野中的标准偏差。由于平均粒径和标准偏差在各个SEM图像的视野中产生少许差异,因此将平均粒径和标准偏差取10个视野的平均。
(弯曲强度)
基于JIS R1601:2008,测定室温(5~35℃)下的烧结体的三点弯曲强度。
表1为样品1~23中的烧结体的组成、原料粉末的D50和D90、烧结体的晶粒的平均粒径和晶粒的粒径分布的标准偏差、弯曲强度的测定结果。在该实施例中,通过适当设定原料粉末的粒度分布(D50和D90),从而获得晶粒的平均粒径和标准偏差不同的各种样品(烧结体)。弯曲强度的样品数(N)为10。另外,样品1~23中的烧结体的相对密度为94~99%。
[表1]
明确了:晶粒的平均粒径为1.5μm以下、并且晶粒的粒径分布的标准偏差为1.2μm以下的样品1-19的弯曲强度为550MPa以上,与晶粒的平均粒径大于1.5μm、或者晶粒的粒径分布的标准偏差大于1.2μm的样品20-23相比,弯曲强度大。
明确了:晶粒的平均粒径为1.5μm以下、并且晶粒的粒径分布的标准偏差为1.0μm以下的样品1-17的弯曲强度为580MPa以上,与晶粒的平均粒径为1.5μm以下、并且晶粒的粒径分布的标准偏差大于1.0μm且为1.2μm以下的样品18、19相比,弯曲强度大。
明确了:晶粒的平均粒径为1.0μm以下、并且晶粒的粒径分布的标准偏差为1.0μm以下的样品1-14的弯曲强度为600MPa以上,与晶粒的平均粒径大于1.0μm且为1.5μm以下、并且晶粒的粒径分布的标准偏差为1.0μm以下的样品15-17相比,弯曲强度大。
样品1-19能够分散对烧结体施加载荷时的应力,能够抑制应力集中于特定的晶粒而产生的裂缝,因此推测与样品20-23相比,机械强度提高。样品1-17与样品18、19相比,晶粒的粒径分布的标准偏差小,因此推测能够进一步提高应力集中的抑制效果。样品1-14与样品15-17相比,晶粒的平均粒径小,因此推测能够进一步提高应力集中的抑制效果。
以上,基于实施方式对本发明进行了说明,但本发明不受上述实施方式的任何限定,可以容易地推测出能够在不脱离本发明的宗旨的范围内进行各种改良变形。
在上述实施方式中,对于在接合于主体配件17的接地电极18与中心电极15之间产生火花放电的火花塞10的情况进行了说明,但不一定限定于此。当然能够将实施方式中所说明的氧化铝基烧结体适用于其它火花塞的绝缘体。作为其它火花塞,可举出例如在将中心电极15内包的绝缘体的周围产生阻挡放电的火花塞、在贯通绝缘体的中心电极的前端产生电晕放电的火花塞等。
Claims (3)
1.一种火花塞,具备由氧化铝基烧结体形成的绝缘体,所述绝缘体以氧化物换算计含有90重量%以上的Al成分,其中,
所述绝缘体的晶粒的平均粒径为1.5μm以下,并且所述晶粒的粒径分布的标准偏差为1.2μm以下。
2.根据权利要求1所述的火花塞,其中,所述绝缘体的所述标准偏差为1.0μm以下。
3.根据权利要求1或2所述的火花塞,其中,所述绝缘体的所述平均粒径为1.0μm以下。
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US8274203B2 (en) * | 2009-12-01 | 2012-09-25 | Federal-Mogul Ignition Company | Electrode material for a spark plug |
JP4871407B1 (ja) * | 2010-09-15 | 2012-02-08 | 日本特殊陶業株式会社 | スパークプラグ及びスパークプラグ用主体金具 |
CN103492345B (zh) * | 2011-07-14 | 2016-04-06 | 株式会社东芝 | 陶瓷电路基板 |
JP5775544B2 (ja) * | 2013-05-09 | 2015-09-09 | 日本特殊陶業株式会社 | 点火プラグ用絶縁体及び点火プラグ |
JP5778819B2 (ja) * | 2013-05-09 | 2015-09-16 | 日本特殊陶業株式会社 | 点火プラグ |
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