CN110978687A - 一种ptfe基高频微波覆铜板的制备方法 - Google Patents
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Abstract
一种PTFE基高频微波覆铜板的制作方法,包括如下步骤:S1配料:在纯的PTFE乳液中混入一定量的陶瓷粉混合均匀;S2调节PH:采用加入氨水的形式调节配制好的乳液的PH值;S3调节搅拌速度得到PTFE胶液;配制好的PTFE乳液,倒入上胶机的胶槽中;调节配制好乳液的PH值,并且在过程中保持稳定;调节上胶机胶槽的搅拌速度;调节上胶机上两个温区的的温度,进行若干次上胶,最后一次上胶与前面几次温度不同;调节玻纤布的运行速度和张力;胶片和铜箔采用真空热压机得到覆铜板。本发明对纯的PTFE乳液进行了配制,使得保留PTFE的优点,减少了其缺点。
Description
技术领域
本发明涉及一种PTFE基高频微波覆铜板的制备方法,属于毫米波高频基板制备领域,特别是涉及到当今5G毫米波对覆铜板性能的要求。
背景技术
当前,5G正在发展中,未来几年内,5G会实现井喷式发展,5G和4G以及3G的区别除了体现在速率更快和延时更短之外,主要还是体现在传输信号的频率更高了,属于毫米波范畴。因此普通的电路基板很难满足信号的传输需求,这个时候必须找到一种代替材料,PTFE就是最好的取代材料。
但是PTFE也有一些缺点,比如就是热膨胀系数比较大,不易粘结等,因此如果想把PTFE用作电路基板,就必须满足一定的条件,就是改善热膨胀性系数大以及不沾任何物质的特点。本申请人在先申请采用的固态材料,一些物理性能仍需要改进。
当前国外有一些公司具备生产高质量PTFE基覆铜板的能力,但是我国在使用的时候只能进口,国外严格的技术保密,因此本发明能够很好的打破国外垄断局面,真正实现自己的PTFE基高频覆铜板。
发明内容
本发明目的是,为了满足当今5G发展的需求,减少国外的垄断,制备一种生产速度快,成本低,性能优越的PTFE基高频覆铜板。
技术方案:为实现上述目的,本发明采用的技术方案为:
一种PTFE基高频微波覆铜板的制备方法,包括以下具体步骤:
S1配料:在纯的PTFE乳液中混入一定量的陶瓷粉混合均匀;
S2调节PH:采用在室温下加入氨水的形式调节配制好的乳液的PH值;
S3调节搅拌速度:合理的调节搅拌速度,不使乳液里的陶瓷粉沉淀,也不能使氨水挥发太快;得到PTFE胶液;
S4上胶并调节烘干温度:在玻纤布浸或涂覆PTFE胶液,上胶时调节玻纤布速度和张力;浸涂后的玻纤布表面烘干,调节上下两个表面的温区的烘干温度,下温区的温度低一点,上温区的温度高一些;上胶并烘干若干次,最后一遍烘干的温度要高一些;
S5以上pp片材制备完成后,将其两面覆上铜箔,并在真空中热压;
进一步的,所述步骤S1中配置PTFE乳液中加入了陶瓷粉,陶瓷粉可以选择的种类有氧化铝粉,氧化钙,氧化硅,高岭土等,重量占比为2%-5%。
进一步的,所述步骤S2中,采用在室温下加入氨水调节配制乳液的PH值的方法,使PH值控制在7.5-10左右。
进一步的,所述步骤S3中,采用上胶机上胶,使上胶机胶槽里的搅拌速度控制在20转/分钟。
进一步的,所述步骤S4中,在上胶的前几次过程中,下温度控制在50-100℃,上温区控制在80-150℃,但是要保证上温区的温度比下温区的高,在进行若干次上胶烘干之后进行最后一次上胶烘干,温度调为下温区100-200℃,上温区控制在300-380℃。
进一步的,所述步骤S4,对于上胶过程中,玻纤布的速度和张力也是一个重要参数,玻纤布的速度控制在0.2-1米/分钟,张力控制在0.1-0.3N。
本发明对纯的PTFE乳液进行了配制,使得保留PTFE的优点,减少了其缺点。对于上胶过程中的温区温度以及玻纤布的速度和张力都进行了很好的控制,使得得到的胶片厚度均匀,制作出的覆铜板保持很好的一致性,均匀性好,由于PTFE乳液进行了掺杂,降低了玻纤布对于基板介电性能的影响,所制作的PTFE高频覆铜板能够满足5G毫米波的使用,是理想的高频覆铜板材料。
有益效果:本发明最后一次上胶与前面几次温度不同;调节玻纤布的运行速度和张力;胶片和铜箔采用真空热压机得到覆铜板。PTFE乳液中加入氨水可以保证上胶过程始终处于一个稳定的环境,并且氨水的易挥发性保证了其他化学组分性质不受改变,保证了高频微波覆铜板的性能。制作的覆铜板进行测试,平整度效果好,铜箔的剥离强度可以达到2.5N/mm,并且稳定,介电常数在2.2,介电损耗在0.001,完全满足5G信号传输的电学特性要求。
本发明对纯的PTFE乳液进行了配制,使得保留PTFE的优点,减少了其缺点。对于上胶过程中的温区温度以及玻纤布的速度和张力都进行了很好的控制,使得得到的胶片厚度均匀(最后制备时根据覆铜板的厚度要求,采用若干层胶片真空热压),制作出的覆铜板保持很好的一致性,均匀性好,由于PTFE乳液进行了掺杂,降低了玻纤布对于基板介电性能的影响,所制作的PTFE高频覆铜板能够满足5G毫米波的使用,是理想的高频覆铜板材料。
具体实施方式
下面结合实施例对本发明更进一步的说明。
一般而言,配制好的PTFE乳液,倒入上胶机的胶槽中;调节配制好乳液的PH值,并且在过程中保持稳定;调节上胶机胶槽的搅拌速度;调节上胶机上两个温区的的温度,进行若干次上胶,最后一次上胶与前面几次温度不同;调节玻纤布的运行速度和张力;胶片和铜箔采用真空热压机得到覆铜板。
实施例1:一种PTFE基高频微波覆铜板的制备方法
S1:配制25L的PTFE乳液(杜邦DISP30LX),加入1000g的氧化铝粉混合均匀;
S2:在配制好的PTFE乳液中加入氨水,使乳液的PH值在9.0左右(PH值8.6-9.6),并且保持稳定;
S3:使上胶机里面的搅拌轴转速控制在20转/分钟,并且保持稳定不变,不能使氧化铝粉沉淀,也不能使氨水挥发太快,PH值降低的时候及时补充氨水调节;
S4:调节下温区的温度在60℃,上温区的温度在100℃,在最后一遍上胶的时候,下温区的温度在180℃,上温区的温度在360℃。
S5:调节布的速度为0.5米/分钟,玻纤布的张力为0.2N;
S6:重复上胶6次,并真空热压得到高频微波覆铜板,真空热压铜箔采用现成的工艺。
将制作的覆铜板进行测试,平整度效果好,铜箔的剥离强度可以达到2.5N/mm。并且稳定,介电常数在2.6,介电损耗在0.002以下,效果良好。
实施例2:PTFE基高频微波覆铜板的制备方法
S1:配制25L的PTFE乳液(杜邦DISP30LX),加入1500g的氧化铝粉混合均匀;
S2:在配制好的PTFE乳液中加入氨水,是乳液的PH值在9.5,并且保持稳定;
S3:使上胶机里面的搅拌轴转速控制在20转/分钟,并且保持稳定不变,不能使氧化铝粉沉淀,也不能使氨水挥发太快,PH值降低的时候及时补充氨水调节;
S4:调节下温区的温度在80℃,上温区的温度在120℃,在最后一遍上胶的时候,下温区的温度在170℃,上温区的温度在350℃。
S5:调节布的速度为0.5米/分钟,玻纤布的张力为0.2N;
S6:重复上胶10次,并真空热压得到高频微波覆铜板,真空热压铜箔采用现成的工艺。
将制作的覆铜板进行测试,平整度效果好,铜箔的剥离强度可以达到2.5N/mm。并且稳定,介电常数在2.2,介电损耗在0.001,效果良好。
以上所述仅是本发明的优选实施方案,应当指出:对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (5)
1.一种PTFE基高频微波覆铜板的制备方法,其特征在于,包括以下具体步骤:
S1配料:在纯的PTFE乳液中混入一定量的陶瓷粉混合均匀;
S2调节PH:采用加入氨水的形式调节配制好的乳液的PH值;
S3调节搅拌速度得到PTFE胶液;
S4上胶并调节烘干温度:在玻纤布浸或涂覆PTFE胶液,上胶时调节玻纤布速度和张力;浸涂后的玻纤布表面烘干,调节上下两个表面的温区的烘干温度,下温区的温度于上温区的温度;上胶并烘干若干次,最后一遍烘干的温度要高于先前的烘干温度;
S5以上片材制备完成后,将其两面覆上铜箔,并在真空中热压;
所述步骤S1中,陶瓷粉选择的种类有氧化铝粉,氧化钙,氧化硅或高岭土,重量比为2%-5%;
所述步骤S2中,采用氨水在室温下调节配制乳液的PH值的方法,使PH值控制在7.5-10。
2.根据权利要求1所述的一种PTFE基高频微波覆铜板的制备方法,其特征在于,所述步骤S3,搅拌速度控制在20转/分钟。
3.根据权利要求1所述的一种PTFE基高频微波覆铜板的制备方法,其特征在于,所述步骤S4,在上胶的前几次过程中,下温度控制在50-100℃,上温区控制在80-150℃,但是要保证上温区的温度比下温区的高,在进行若干次上胶烘干之后进行最后一次上胶烘干,温度调为下温区100-200℃,上温区控制在300-380℃。
4.根据权利要求1所述的一种PTFE基高频微波覆铜板的制备方法,其特征在于,所述步骤S5,对于上胶过程中,采用上胶机上胶,玻纤布的速度控制在1-3米/分钟,张力控制在0.1-0.3N。
5.根据权利要求1所述的一种PTFE基高频微波覆铜板的制备方法,其特征在于,PH值8.6-9.6。
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