CN110965029B - 用于在三维物体的表面上沉积金属膜的设备 - Google Patents
用于在三维物体的表面上沉积金属膜的设备 Download PDFInfo
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- 230000008021 deposition Effects 0.000 claims abstract description 42
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
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- 229910052802 copper Inorganic materials 0.000 description 2
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- 230000002411 adverse Effects 0.000 description 1
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Abstract
本公开涉及一种用于在三维物体的表面上沉积金属膜的设备,并且更具体地,涉及一种用于在三维物体的表面上沉积金属膜的设备,其中,多个三维物体被安装到安装鼓,使得其要经受沉积的三维表面可面向源靶,并且安装鼓是可旋转的,从而在三维物体的三维表面上沉积具有改进的均匀性和质量的三维金属膜。根据本公开所述的设备包括:安装鼓,该安装鼓可旋转地设置在腔室内部并且具有圆周表面,多个三维物体被安放并安装到该圆周表面上,从而使其要经受沉积的每个表面被暴露于外部;以及至少一个源靶,该至少一个源靶通过溅射使金属膜沉积到安装到安装鼓的三维物体的表面上。
Description
技术领域
本公开涉及一种用于在三维物体的表面上沉积金属膜的设备,并且更具体地涉及一种用于在三维物体的表面上沉积金属膜的设备,其中,多个三维物体被安装到安装鼓,使得其要经受沉积的三维表面可面向源靶,并且所述安装鼓是可旋转的,从而在所述三维物体的三维表面上沉积具有改进的均匀性和质量的三维金属膜。
背景技术
为了制造用于各种电子器件的薄膜,例如,为了沉积用于屏蔽半导体封装、太阳能电池和有机发光二极管(OLED)器件的电磁干扰(EMI)的薄膜,已使用了溅射设备。具体地,为了沉积用于屏蔽半导体封装免受EMI的薄膜,已使用了在按直线通过工艺模块的同时执行各工艺的内联溅射沉积系统。
这样的内联溅射沉积系统不适用于要求高水平台阶覆盖的工艺,因为安装有半导体封装的靶和托盘如图5的(a)所示被彼此面对地承载,因此沉积在半导体封装的侧面上的薄膜的厚度低于沉积在半导体封装的顶部上的薄膜的厚度的约40%。
当使用溅射来在半导体封装上沉积薄膜时,封装的除底面外的五个面经受溅射沉积,并且基于五个沉积面当中的具有最薄膜的面设置整个沉积厚度。然而,用于半导体封装的常规溅射设备提供不高于40%的台阶覆盖,并且由于向下沉积方法和用于承载半导体封装托盘的内联系统而难以确保薄膜的均匀性。
发明内容
因此,设想本公开以解决上述问题,并且本公开的一个方面是为了提供一种用于在三维物体的表面上沉积金属膜的设备,其中多个三维物体被安装到安装鼓,使得其要经受沉积的三维表面可面向源靶,并且所述安装鼓是可旋转的,从而在所述三维物体的三维表面上沉积具有改进的均匀性和质量的三维金属膜。
本公开的另一方面是为了提供一种用于在三维物体的表面上沉积金属膜的设备,其中半导体IC封装被用作所述三维物体,从而在半导体IC封装的四个侧面和顶面上高效地沉积作为具有均匀厚度的电磁干扰(EMI)屏蔽膜的金属膜。
根据本公开的实施方式,提供了一种用于在三维物体的表面上沉积金属膜的设备,该设备包括:安装鼓,该安装鼓可旋转地设置在腔室内部并且包括圆周表面,多个三维物体被安放并安装到该圆周表面上,从而使其要经受沉积的每个表面被暴露于外部;以及至少一个源靶,该至少一个源靶通过溅射使金属膜沉积到安装到安装鼓的三维物体的表面上。
这里,三维物体可以是半导体集成电路(IC)封装,并且金属膜可以是沉积在半导体IC封装的封装表面上的电磁干扰(EMI)屏蔽膜,封装表面包括四个侧面和顶面。
此外,安装鼓可以被成形为类似具有多个安装表面的多边形容器,并且可以将多个三维物体安装到安放并设置在安装鼓的安装表面上的夹具。
附图说明
根据结合附图进行的示例性实施方式的以下描述,本公开的以上和/或其它方面将变得显而易见并更容易地理解,在附图中:
图1是根据本公开的实施方式的用于在三维物体的表面上沉积金属膜的设备的示意截面图;
图2是示出了根据本公开的三维物体(即,半导体集成电路(IC)封装)和沉积在该三维物体的表面上的金属膜的示意截面图;
图3是示出了根据本公开的实施方式的用于在三维物体的表面上沉积金属膜的设备中的夹具的平面图;
图4是根据本公开的实施方式的用于在三维物体的表面上沉积金属膜的设备的局部放大图;以及
图5是示出了常规沉积操作与基于根据本公开的实施方式的用于在三维物体的表面上沉积金属膜的设备的沉积操作之间的比较的示意截面图。
[附图标记]
100:半导体IC封装 110:真空腔室
120:离子束发生器 130:源靶
150:保持槽 160:夹具
170:安装鼓 171:安装表面
190:隔板 200:设备
具体实施方式
图1是根据本公开的实施方式的用于在三维物体的表面上沉积金属膜的设备的示意截面图。
如图1中所示,根据本公开的实施方式的用于在三维物体的表面上沉积金属膜的设备200包括:安装鼓170,该安装鼓170具有稳定地安装有多个三维物体的圆周表面;以及至少一个源靶130,该至少一个源靶130被设置为与安装鼓170的圆周表面相邻并且执行溅射以在三维物体的表面上沉积金属膜。必要时,可以附加地给出隔板190以防止相邻的源靶130污染。
安装鼓170被成形为类似圆柱容器或多边形容器,并且可旋转地设置在真空腔室110内。多个三维物体(特别地,图2、图3、图4和图5的半导体集成电路(IC)封装100)被安装到安装鼓170的圆周表面(特别地,与多边形棱柱的每个面相对应的安装表面171),使得要经受沉积的三维物体的表面可被暴露于外部。换句话说,根据本公开的安装鼓170可在真空腔室110内旋转,并且多个三维物体被安放在安装鼓170的圆周表面上并安装到安装鼓170的圆周表面,同时使其要经受沉积的表面暴露于外部。
具体地,安装鼓170具有圆柱形状或多棱柱形状,旋转杆175连接到安装鼓170的顶面和底面中的至少一个,并且多个三维物体被安放在与圆周表面的平坦部分相对应的安装表面171上并安装到与圆周表面的平坦部分相对应的安装表面171。旋转杆175可旋转地联接在真空腔室110内。结果,安装鼓170可旋转地设置在真空腔室110内,同时多个三维物体(例如,半导体IC封装)被稳定地安装到安装表面171。
与此类似,多个三维物体被安放在安装鼓170的圆周表面上并安装到安装鼓170的圆周表面,同时使要经受沉积的表面暴露于外部,并且因此要经受沉积的表面被设置为从安装鼓170的圆周表面171突出。根据本公开,用于在三维物体的表面上沉积金属膜的设备200指代用于使金属膜沉积到诸如半导体IC封装的三维物体的表面上的沉积设备,并且因此半导体IC封装等三维物体的表面被设置为在安装鼓170的圆周表面171上暴露。
被安装在安装鼓170的圆周表面171上以使得要经受沉积的表面可如上所述被暴露于外部的多个三维物体经历基于至少一个源靶130的溅射。因此,至少一个源靶130被设置为使预定金属膜沉积到多个三维物体的表面上。换句话说,至少一个源靶130执行溅射操作以使金属膜沉积到安装到安装鼓170的圆周表面171的三维物体的暴露表面上。
源靶130被形成为要沉积在三维物体的表面上的金属靶,并且金属靶在溅射工艺期间作为阴极操作。与充当阴极的金属靶相对应的源靶130在三维物体的表面上沉积包括至少一个金属层的金属膜。
此外,具有圆柱或多边形棱柱形状的安装鼓170在由源靶130执行的溅射工艺期间可旋转,使得源靶130可针对三维物体的表面(例如,诸如半导体IC封装的三维物体的四个侧面和顶面)执行三维沉积。
因此,在根据本公开的用于在三维物体的表面上进行沉积的设备200中,在三维物体的表面上进行三维沉积不需要用于对三维物体的顶面和四个侧面执行溅射的复杂的源靶以及用于驱动该复杂的源靶的附加元件,并且简单的源靶足以针对三维物体的表面执行三维沉积。
如上所述,根据本公开的用于在三维物体的表面上进行沉积的设备200不会针对与一个平面相对应的简单表面执行沉积,而是针对诸如半导体IC封装的三维物体的表面(即,与四个侧面和顶面相对应的三维表面)执行沉积,从而形成金属膜,特别是用于屏蔽电磁干扰(EMI)的膜。
根据本公开,三维物体指代需要在其表面上形成金属膜并且具有与至少两个平面相对应的表面(即,要经受金属膜沉积的三维表面)的任何三维物体。特别地,根据本公开,三维物体是半导体IC封装,并且金属膜是要沉积在封装表面10上的EMI屏蔽膜,封装表面10包括半导体IC封装的四个侧面(即,封装侧面13)和顶面(即,封装顶面11)。
因此,除非另外在下面附加地描述,否则三维物体意指半导体IC封装,金属膜意指EMI屏蔽膜,并且表面意指包括四个侧面(即,封装侧面:13)和顶面(即,封装顶面:11)的封装表面10。
作为根据本公开的三维物体,半导体IC封装100具有如图2中所示的立方体形状,并且包括外表面(即,其封装表面10)上的金属膜90。这里,金属膜90是形成在半导体IC封装100的表面上的EMI屏蔽膜。此外,用作EMI屏蔽膜的金属膜90对应于半导体IC封装的表面,例如,包括相当于四个侧面的封装侧面13和相当于顶面的封装顶面11的封装表面10。
如图2中所示,半导体IC封装100包括基板30、嵌入在基板30上的各种有源器件和无源器件(未示出)及诸如控制器等的各种芯片50、以及形成在基板30上并保护各种芯片50等的保护盖60。基板30的底面,即,封装底面15可以被形成有用于电连接的输入/输出(IO)焊盘70,并且焊球80可以形成在IO焊盘70上。
形成有上述结构的半导体IC封装100需要在保护盖60的表面(即,包括封装顶面11和与四个侧面相对应的封装侧面13的封装表面10)上包括金属膜90作为EMI屏蔽膜。根据本公开,金属膜,即,EMI屏蔽膜被沉积在与封装顶面11和封装侧面13相对应的部分上,但是不应该被沉积在要形成有IO焊盘70、焊球80等的封装底面15上。因此,防止了封装底面15在沉积工艺期间被暴露于外部。
在下面,将参照更具体的技术特征和附加技术特征详细地描述根据本公开的用于在三维物体的表面上进行沉积的设备200。
根据本公开的用于在三维物体的表面上进行沉积的设备200需要采用这样的配置:在多个三维物体(优选地,半导体IC封装100)被全部稳定地安装到安装鼓170的状态下执行沉积工艺,使得可在多个三维物体(优选地,半导体IC封装100)的表面上沉积金属膜90。
为此,根据本公开的安装鼓170可以被成形为类似具有多个安装表面171的多边形棱柱,并且多个三维物体(优选地,半导体IC封装100)可以被安装到紧固到安装鼓170的安装表面171的夹具160。
具体地,安装鼓170仅必须被成形为类似容器并且可旋转地安装在真空腔室110内。优选地,安装鼓170具有多边形棱柱形状,从而使得有可能形成与平面相对应的安装表面171,使得可稳定地安放和设置安装有多个三维物体的夹具160。
因此,根据本公开的安装鼓170被成形为类似多边形棱柱,并且因此具有与该多边形棱柱的侧面相对应的多个安装表面171,使得可将安装有多个三维物体的夹具160稳定地安放在每个平坦的安装表面171上。
因为被紧固并安装到夹具160,可将多个三维物体安装到安装鼓170的圆周表面,即,安装表面171。在这种情况下,夹具160可以被安装有尽可能多的三维物体,从而改进生产效率。
为此,如图3和图4中所示,根据本公开,与多个三维物体相对应的半导体IC封装100通过粘合膜180被稳定地紧固并安装到夹具160。具体地,多个三维物体以预定间隔彼此间隔开的形式被安装到粘合膜180上。在这种情况下,多个三维物体(即,半导体IC封装100)的底面,即,封装底面15被附接到粘合膜180。因此,多个三维物体的封装底面15在沉积工艺期间未被暴露于外部,因此未经受沉积。
具有附接有多个三维物体的顶面(即,粘合表面)的粘合膜180由夹具160保持。夹具160可以具有平板的结构并且被附接到具有附接有多个三维物体的顶面的粘合膜180的底面并且由具有附接有多个三维物体的顶面的粘合膜180的底面支承。然而,这样的结构具有如下问题:粘合材料必须被应用于粘合膜180的顶面和底面两者,并且用于将夹具160与附接有多个三维物体的粘合膜180联接所需的时间、精力和成本随着夹具160的粘合面积变得更大而增加。
因此,根据本公开的夹具160可以被成形为类似不锈钢的环形框架而不是平板的结构。换句话说,根据本公开的夹具160具有如图3和图4中所示的环形框架形状,并且被附接到附接有多个三维物体(即,半导体IC封装100)的粘合膜180的边缘部分。
利用此结构,根据本公开的多个三维物体通过粘合膜180的媒介被稳定地安装到夹具160,并且夹具160被稳定地安放并设置在安装鼓170的安装表面171上,使得可将多个三维物体(优选地,半导体IC封装100)稳定地安装到与安装鼓170的圆周表面相对应的安装表面171。
需要将夹具160稳定地安放并设置在安装鼓170的安装表面171上。为此,夹具160可以通过单独的粘合手段被附接到安装鼓170的安装表面171,或者可以通过单独的装夹手段来稳定地紧固。然而,这样单独的手段可以使得难于安装和分离夹具160并且导致复杂的结构。
因此,本公开提供一种其中夹具160易于安装和分离的简单结构,并且,即使在安装鼓170旋转时,夹具160也稳定地维持其位置而不移动或分离。具体地,根据本公开,如图1和图4所示,从安装鼓170的安装表面171突出并且彼此面对的保持槽150被设置为保持夹具160的相对边缘。
保持槽150形成为如图1和图4所示的一对,并且彼此面对地间隔开,同时各自具有从安装鼓170的安装表面171突出的形状。保持槽150形成在安装鼓170的安装表面171上,并且设置在垂直于安装鼓170的旋转方向(即,鼓旋转方向rd)的方向上。结果,滑动并联接到保持槽150的夹具160由保持槽150支承,并且在安装鼓170在鼓旋转方向rd上旋转的同时维持稳定状态而不移动和分离。
一对保持槽150按照垂直于安装鼓170的旋转方向(即,垂直于鼓旋转方向rd)的方向纵向设置,使得夹具160在垂直于安装鼓170的旋转方向的方向上从侧面滑动时可被插入在保持槽150中并联接到保持槽150。
与此类似,根据本公开,保持槽150从安装表面171突出并且彼此面对,使得经由粘合膜180安装有多个三维物体(即,半导体IC封装100)的夹具160可滑动并安放在安装鼓170的安装表面171上,从而具有在安装鼓170正在旋转的同时稳定地维持夹具160的效果,并且使得很容易地安装和分离夹具160。
此外,多个三维物体(即,半导体IC封装100)被附接到粘合膜180并且以预定间隔彼此间隔开。然而,附接到粘合膜180上的多个三维物体(即,半导体IC封装100)之间的空间,即,封装间距距离ps需要大于多个三维物体(即,半导体IC封装100)的高度,即,封装高度ph。
与此类似,根据本公开的多个三维物体(即,半导体IC封装100)必须被布置为具有大于封装高度ph的封装间距距离ps。利用此结构,可使具有均匀厚度的金属膜90沉积到半导体IC封装的侧面,即,封装侧面13上。具体地,利用此布置结构,如图5的(b)中所示,在安装鼓170旋转的同时沉积被应用达半导体IC封装100的侧面,即,达封装侧面13的深部分(即,与基板相邻的一部分),从而沉积金属膜90以在半导体IC封装100的侧面,即,封装侧面13上具有均匀厚度。
此外,根据本公开的实施方式的用于在三维物体的表面上进行沉积的设备200可以包括如图1中所示的多个源靶130。也就是说,可以设置单个源靶130以使三维金属膜沉积到在真空腔室110内旋转的多个三维物体(即,半导体IC封装100)的三维表面上。然而,可以设置多个源靶131、133和135以使三维金属膜沉积到多个旋转三维物体(即,半导体IC封装100)的三维表面(即,包括封装顶面11和封装侧面13的封装表面10)上。图1示出了包括多个源靶(即,第一源靶131、第二源靶133、第三源靶135)和其它附加源靶的源靶130。然而,源靶130可以包括比图1中所示出的那些源靶更多的源靶,并且这些源靶可以被更密集地布置。
如上所述,当源靶130包括多个源靶时,多个源靶(例如,如图1中所示包括第一源靶131、第二源靶133和第三源靶135的源靶)可以被用作一种金属的阴极靶,即,相同的金属靶,或者可以被用作不同金属的阴极靶,即,不同的金属靶。
与此类似,根据本公开的源靶130可以包括多个源靶131、133和135,并且多个源靶(例如,如图1中所示包括第一源靶131、第二源靶133和第三源靶135的源靶)可以由相同的金属靶或不同的金属靶实现。
前者情况(其中源靶包括多个源靶,并且多个源靶由相同的金属靶实现)用于在多个三维物体(即,半导体IC封装100)的三维表面上形成与包括一个金属层的金属膜90相对应的EMI屏蔽膜。换句话说,多个源靶由一种金属的相同的金属靶实现。
与此类似,当多个源靶130由相同的金属靶实现时,多个三维物体(即,半导体IC封装100)的三维表面在安装鼓170旋转的同时连续地经历溅射,使得可以沉积与EMI屏蔽膜相对应的金属膜90。结果,可以加速多个三维物体(即,半导体IC封装100)的三维表面上的金属膜的沉积,从而改进生产和沉积效率。
如上所述,当源靶130包括多个相同的金属靶时,可以基于多个三维物体(即,半导体IC封装100)的三维表面上的金属膜沉积的效率和质量来调节源靶之间(即,金属靶之间)的空间。实际上,源靶之间的空间越窄越好。优选的是,源靶被比图1中所示的那些更密集地布置。
接下来,后者情况(其中源靶包括多个源靶,并且多个源靶由不同的金属靶实现)用于在多个三维物体(即,半导体IC封装100)的三维表面上形成与包括多个金属层的金属膜90相对应的EMI屏蔽膜。换句话说,多个源靶由不同的金属的不同的金属靶实现。
例如,如图1中所示,当源靶130包括三个源靶(即,第一源靶131、第二源靶133、第三源靶135)和其它源靶时,不同的金属靶被用作第一源靶131、第二源靶133和第三源靶135。在这种情况下,第一源靶131可以在多个三维物体(即,半导体IC封装100)的三维表面上沉积第一金属层(例如,不锈钢层),第二源靶133可以在第一金属层上沉积第二金属层(例如,铜层),并且第三源靶135可以在第二金属层上沉积第三金属层(例如,不锈钢层)。这里,沉积在多个三维物体(即,半导体IC封装100)的三维表面上的金属膜90是通过依次沉积第一金属层(例如,不锈钢(SUS)层)、第二金属层(例如,铜(Cu)层)和第三金属层(例如,不锈钢(SUS)层)而形成的。
与此类似,当源靶130包括多个源靶130并且多个源靶由不同的金属靶实现时,仅特定源靶130工作以执行溅射,并且其它源靶不执行溅射。换句话说,仅某个源靶被控制为工作,而其它源靶被控制为不工作。
当仅一个源靶工作以执行溅射时,三维沉积随着安装鼓170旋转而被应用于安装到安装鼓170的多个三维物体(即,半导体IC封装100)的三维表面。换句话说,执行溅射的源靶的第一金属被沉积在安装到安装鼓170的多个三维物体(即,半导体IC封装100)的三维表面上,从而形成第一金属层。例如,参照图1,当仅第一源靶131工作以执行溅射但是第二源靶133和第三源靶135不工作时,从第一源靶131溅射第一金属并且第一金属层被沉积到多个三维物体(即,半导体IC封装100)的三维表面上。
当第一金属层的沉积完成时,仅与溅射第一金属层的源靶(例如,第一源靶131)不同且相邻的源靶(例如,第二源靶133)工作以执行溅射,并且其它源靶(例如,第一源靶131和第三源靶135)不工作。最后,从第二源靶133向多个三维物体(即,半导体IC封装100)的三维表面溅射第二金属,并且因此第二金属层被沉积在第一金属层上。
当第二金属层的沉积完成时,仅与溅射第二金属层的源靶(例如,第二源靶133)不同且相邻的源靶(例如,第三源靶135)工作以执行溅射,其它源靶(例如,第一源靶131和第二源靶133)不工作。最后,从第三源靶135向多个三维物体(即,半导体IC封装100)的三维表面溅射第三金属,并且因此第三金属层被沉积在第二金属层上。
因此,多个源靶130依次工作,使得所对应的金属层被依次溅射并堆叠在多个三维物体(即,半导体IC封装100)的三维表面上,从而最终在多个三维物体(即,半导体IC封装100)的三维表面上形成包括多个金属层的金属膜90,即,EMI屏蔽膜。
与此类似,当源靶130包括多个源靶并且多个源靶130分别由不同的金属靶实现时,多个源靶中仅用于特定金属靶的某个源靶工作并且被控制为向基板侧面溅射与特定金属靶相对应的金属。
在这些工作期间,需要防止与某个源靶(例如,第一源靶131)不同且相邻的源靶(例如,第二源靶133)经由与某个源靶相对应的金属靶的溅射所引起的污染。换句话说,必须防止某个源靶的特定金属靶的金属被沉积在与其它相邻的源靶相对应的其它金属靶上。
为此,如图1所示,根据本公开的用于在三维物体的表面上进行沉积的设备200还可以包括位于某个源靶与其它相邻的源靶之间的隔板190,从而防止执行溅射的某个源靶的金属被沉积到其它相邻的源靶。换句话说,根据本公开,当多个源靶130由不同的金属靶实现时,还在执行溅射的源靶130与其它相邻的源靶130之间设置隔板190。
在上述描述中,源靶,即,第一源靶131、第二源靶133和第三源靶135中的每一个均作为每个单独的源靶被设置。另选地,每个源靶可以包括多个相同的金属靶。也就是说,源靶可以由多个相同的金属靶组实现。因此,用于第一源靶的多个相同的金属靶可以执行溅射以沉积第一金属层。
此外,根据本公开的用于在三维物体的表面上沉积金属膜的设备200还可以包括用于在执行用于在多个三维物体(即,半导体IC封装100)的表面上沉积金属膜90的工艺之前预处理多个三维物体(即,半导体IC封装100)的表面的配置。
另外,细颗粒可能存在于多个三维物体(即,半导体IC封装100)的表面上。为了在沉积之前去除这样的细颗粒,可以进一步执行基于等离子体的预处理以便于精确清洁。当执行这样的基于等离子体的预处理时,防止了由于细颗粒所引起的不利影响。
此外,根据本公开的用于在三维物体的表面上沉积金属膜的设备200还可包括离子束发生器120以在用于在多个三维物体(即,半导体IC封装100)的表面上形成金属膜90的工艺之前通过在真空腔室110内部的离子束来预处理多个三维物体(即,半导体IC封装100)的表面。
换句话说,为了增强与EMI屏蔽膜对应的金属膜90与多个三维物体(即,半导体IC封装100)的三维表面之间的粘附和紧密接触,在执行溅射以在多个三维物体(即,半导体IC封装100)的表面上沉积金属膜90之前在真空腔室110中执行离子束工艺。为此,仅与用于离子束工艺的离子束发生器120相对应的离子束枪仅被添加到真空腔室110。
与此类似,根据本公开,通过离子束工艺在与用于在三维物体(例如,半导体IC封装100)的表面上形成金属膜(例如,EMI屏蔽膜)的真空腔室相同的腔室中执行针对三维物体(例如,半导体IC封装100)的表面的预处理,从而简化用于增强三维物体(例如,半导体IC封装)的表面的粘附和紧密接触的工艺,并且因此减少制造具有高质量的三维物体(例如,半导体IC封装)的时间、精力和成本。此外,当沉积在三维物体(例如,半导体IC封装)的表面上的金属膜(例如,EMI屏蔽膜)包括多个金属层时,可以针对每个金属层在一个腔室中执行离子束工艺,从而进一步改进金属层之间的粘附和紧密接触。
如上所述,与在三维物体的表面上沉积金属膜的常规方法相比较,如图5所示的根据本公开的用于在三维物体的表面上沉积金属膜的设备200改进了关于封装侧面的沉积效率。具体地,通过针对三维物体的表面的沉积的常规方法,如图5的(a)所示,金属膜仅被均匀地沉积在三维物体的顶面上,但是金属膜在侧面上很难沉积或者无法厚度均匀地沉积。另一方面,通过根据本公开的用于在三维物体的表面上沉积金属膜的设备,如图5的(b)所示,随着安装鼓旋转,可不仅在三维物体(例如,半导体IC封装100)的顶面上而且在三维物体(例如,半导体IC封装100)的侧面上均匀地沉积金属膜。因此,根据本公开的用于在三维物体的表面上沉积金属膜的设备200改进了金属膜到三维物体(例如,半导体IC封装100)的表面上的沉积效率。
根据本公开,多个三维物体被安装到安装鼓,使得其要经受沉积的三维表面可面向源靶,并且安装鼓是可旋转的,从而在三维物体的三维表面上沉积具有改进的均匀性和质量的三维金属膜。
此外,半导体IC封装可用作三维物体,从而在半导体IC封装的四个侧面和顶面上高效地沉积具有均匀厚度的作为电磁干扰(EMI)屏蔽膜的金属膜。
尽管已经示出并描述了本公开的几个示例性实施方式,然而这些仅用于示例性目的,并且本领域技术人员应理解的是,在不脱离本发明的原理和精神的情况下,可在这些实施方式中做出变化,本发明的范围被限定在所附权利要求及其等同物中。
Claims (1)
1.一种用于在三维物体的表面上沉积金属膜的设备,该设备包括:
安装鼓,该安装鼓可旋转地设置在腔室内部并且包括圆周表面,多个三维物体被安放并安装到该圆周表面上,从而使所述多个三维物体的要经受沉积的每个表面被暴露于外部;以及
至少一个源靶,该至少一个源靶通过溅射使金属膜沉积到安装到所述安装鼓的所述三维物体的表面上,
其中,所述安装鼓被成形为包括多个安装表面的多边形容器,并且所述多个三维物体被安装到安放并设置在所述安装鼓的安装表面上的夹具上,
其中,所述多个三维物体通过粘合膜稳定地紧固并安装到所述夹具,所述多个三维物体以预定间隔彼此间隔开地设置,以使得安装到所述粘合膜上的所述多个三维物体之间的距离大于所述多个三维物体的高度,并且
其中,所述夹具具有环形框架形状并且被附接到所述粘合膜的边缘部分,
该设备还包括:
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