CN110957396A - 一种零偏压工作石墨烯光电器件及其制备方法 - Google Patents
一种零偏压工作石墨烯光电器件及其制备方法 Download PDFInfo
- Publication number
- CN110957396A CN110957396A CN201911317964.8A CN201911317964A CN110957396A CN 110957396 A CN110957396 A CN 110957396A CN 201911317964 A CN201911317964 A CN 201911317964A CN 110957396 A CN110957396 A CN 110957396A
- Authority
- CN
- China
- Prior art keywords
- graphene
- film
- graphene film
- preparation
- metal electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 106
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 106
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000010408 film Substances 0.000 claims abstract description 50
- 239000002096 quantum dot Substances 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000000059 patterning Methods 0.000 claims abstract description 13
- 239000010409 thin film Substances 0.000 claims abstract description 9
- 230000003647 oxidation Effects 0.000 claims abstract description 7
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 5
- 238000000151 deposition Methods 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000005329 nanolithography Methods 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 3
- 239000012670 alkaline solution Substances 0.000 claims description 2
- 230000005693 optoelectronics Effects 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000005259 measurement Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 10
- 239000000243 solution Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
本发明一种零偏压工作石墨烯光电器件及其制备方法,包括以下步骤:(1)利用化学气相沉积法生长制备石墨烯薄膜;(2)转移所述石墨烯薄膜至预先制备的氧化衬底表面;(3)在所述石墨烯薄膜表面图案化形成石墨烯条带结构;(4)在所述石墨烯薄膜表面的两端沉积金属形成两个金属电极;(5)在所述石墨烯薄膜经图案化的表面进行量子点图案化。通过此制备方法得到的一种能在没有外接偏压下工作的石墨烯光电器件,有效避免石墨烯光电器件在偏压下工作时会产生极大的暗电流,影响器件的寿命和测量精度的问题,通过将量子点精确的覆盖在我们想要的区域,工艺流程简单,与半导体微纳技术紧密结合,具有很强的实用性。
Description
技术领域
本发明属于光电器件技术领域,涉及一种零偏压工作石墨烯光电器件及其制备方法。
背景技术
石墨烯是一种新兴的二维原子晶体材料,其优秀的光学特性和电学特性,以及对硅基集成电路工艺的兼容性,使得石墨烯材料特别适用于光电器件制作。然而在目前的微纳级别石墨烯光电器件的中,由于石墨烯能带结构中狄拉克点的特殊性,导致石墨烯光电器件在偏压下工作时会产生极大的暗电流,影响器件的寿命和测量精度。所以设计一种能在没有外接偏压下工作的石墨烯光电器件成为了需要我们解决的问题。实现零偏压工作的条件是须有内建电场,在以往的光电器件中大致分为光导型(光点导探测器)和光伏型(光电二极管),其中光导型探测器是需要外接偏压的,而光伏型不需要外接偏压。Photogating效应是近些年人们研究的主要方向,利用其效应制造的光电探测器主要表现为器件响应率高。因此,不同于现有的光伏效应,光热电效应等实现零偏压工作的原理,本发明提供了一种基于photogating效应的零偏压工作的光电器件的工艺制备方法。
发明内容
有鉴于此,本发明的目的之一在于提供一种零偏压工作石墨烯光电器件的制备方法,该方法工艺流程简单,能制备在没有外接偏压下工作的石墨烯光电器件,具有很强的实用性。
为实现上述目的,本发明的技术方案为:
一种零偏压工作石墨烯光电器件的制备方法,包括以下步骤:
(1)利用化学气相沉积法生长制备石墨烯薄膜;
(2)转移所述石墨烯薄膜至预先制备的氧化衬底表面;
(3)在所述石墨烯薄膜表面图案化形成石墨烯条带结构;
(4)在所述石墨烯薄膜表面的两端沉积金属形成两个金属电极;
(5)在所述石墨烯薄膜经图案化的表面进行量子点图案化。
优选地,利用微纳光刻曝光技术及电子束蒸镀加工工艺实现微米级别特定图案的石墨烯条带及金属电极的制备。
进一步地,所述石墨烯薄膜为高质量单晶石墨烯薄膜。
进一步地,所述步骤(2)中采用湿法转移技术转移所述石墨烯薄膜。
进一步地,所述步骤(2)中所述氧化衬底通过在纯净的衬底表面制备氧化层得到,其中衬底的材料为硅,玻璃、石英中的一种。
进一步地,所述步骤(3)利用微纳光刻曝光技术及刻蚀技术在所述石墨烯薄膜表面图案化形成微米级别特定图案的石墨烯条带结构其中,所述石墨烯条带两端分别连接两端的金属电极。
进一步地,所述步骤(4)中利用微纳光刻曝光工艺及电子束蒸镀加工工艺在所述石墨烯薄膜表面两端通过镀膜机沉积金属形成两个电极金属。
进一步地,所述步骤(5)包括:在所述石墨烯薄膜经图案化的表面覆盖光刻胶,并进行光刻;在光刻区域覆盖量子点,所述量子点与所述金属电极中的一个接触;去除多余的光刻胶。
进一步地,采用旋涂的方法在光刻区域覆盖量子点。
进一步地,使用碱性溶液和丙酮去除多余的光刻胶。
有鉴于此,本发明的目的之二在于提供一种零偏压工作石墨烯光电器件,该器件能在没有外接偏压下工作,具有很强的实用性。
为实现上述目的,本发明的技术方案为:
一种零偏压工作石墨烯光电器件,包括硅衬底,所述硅衬底表面覆盖一层氧化层,所述氧化层上铺设石墨烯薄膜,所述石墨烯薄膜两端分别连接一个金属电极,所述石墨烯薄膜上铺设有量子点,所述量子点与两个金属电极中的一个相连;其中,
所述石墨烯薄膜上表面有图案化形成的石墨烯条带结构,所述石墨烯条带两端分别连接所述金属电极。
进一步地,所述石墨烯薄膜上铺设有两个互相接触不同量子点,所述两个不同量子点分别与两个金属电极之一相连。
有益效果
本发明提供一种零偏压工作石墨烯光电器件及其制备方法,设计一种能在没有外接偏压下工作的石墨烯光电器件,通过在石墨烯薄膜上铺设量子点,使量子点与石墨烯薄膜产生photogating效应,而不同的量子点photogating效应不同,造成不对称,从而形成内建电场实现零偏压工作;另一方面,在现有技术中的零偏压光电器件中,石墨烯与硅之间需有绝缘层,由于本发明是使用photogating效应形成内建电场,不需要绝缘层存在,因此衬底材料可以选用玻璃、石英等,能一定程度简化零偏压工作光电器件的结构。这种石墨烯光电器件能有效避免石墨烯光电器件在偏压下工作时会产生极大的暗电流,影响器件的寿命和测量精度的问题,通过将量子点精确的覆盖在我们想要的区域,工艺流程简单,与半导体微纳技术紧密结合,具有很强的实用性。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作一简单地介绍。显而易见地,下面描述中的附图是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动性的前提下,还可以根据这些附图获得其它的附图。
图1为本发明一种零偏压工作石墨烯光电器件的制备方法的一实施例流程图;
图2为本发明一种零偏压工作两种不同量子点非均匀覆盖的石墨烯光电器件的一实施例结构示意图;
图3为本发明一种零偏压工作单一量子点非均匀覆盖的石墨烯光电器件的一实施例结构示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述。显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
所举实施例是为了更好地对本发明进行说明,但并不是本发明的内容仅局限于所举实施例。所以熟悉本领域的技术人员根据上述发明内容对实施方案进行非本质的改进和调整,仍属于本发明的保护范围。
需要注意的是,本实施例中量子点均为泛指,以A,B分别代指两种极性不同的半导体材料量子点,为了方便理解,本实施例中的附图中器件的结构比例并不等同实际情况下的光电器件的结构比例。
参考图1,为本发明一种零偏压工作石墨烯光电器件的制备方法的一实施例流程示意图。具体地,一种零偏压工作石墨烯光电器件的制备方法,包括以下步骤:
S10:利用化学气相沉积法生长制备石墨烯薄膜;然后执行步骤S20;
本实施例中,经过化学气相沉积法在铜箔基地上生长适当大小的石墨烯薄膜3,制备出的石墨烯薄膜为高质量单晶石墨烯薄膜。
S20:转移石墨烯薄膜至预先制备的氧化衬底表面;然后执行步骤S30;
本实施例中,氧化衬底起支撑作用,底材料可以是石英与玻璃等具有支撑作用的材料,在一具体实施例中,选用硅衬底1;准备纯净的硅衬底1,并在其表面进行氧化,形成二氧化硅氧化层2。用热氧化的方法在硅衬底的表面获得高质量的氧化层,氧化温度1000℃,氧化时间6分钟,氧化层厚度(埃),预先制备好氧化硅衬底。
在一具体实施例中,预先准备刻蚀溶液,本实施例中使用HCl和H2O2为刻蚀溶液,然后将在铜箔基地上生长的适当大小的石墨烯浸于刻蚀溶液中,反应约12h左右,待铜基底完全溶解后,未浸入刻蚀溶液的上层石墨烯会悬浮在溶液表面。此时用纱网捞取石墨烯薄膜,并将其置于浓度为30%的氨水中浸泡约30min,之后用去离子水多次冲洗以去除石墨烯表面的离子。最终将干净的石墨烯薄膜转移至预先制备好的氧化硅衬底表面,并在140℃环境下烘干10min左右。
在另一实施例中,在转移石墨烯薄膜3之前可以利用涂胶技术保护石墨烯薄膜,防止其被破坏。
S30:在石墨烯薄膜表面图案化形成石墨烯条带结构;然后执行步骤S40;
本实施例中,利用微纳光刻曝光工艺和氧等离子体刻蚀技术将步骤S20中得到的已转移至氧化硅衬底表面的石墨烯薄膜表面图案化形成石墨烯条带结构。
S40:在石墨烯薄膜表面的两端沉积金属形成两个金属电极;然后执行步骤S50;
本实施例中,利用微纳光刻曝光工艺在石墨烯薄膜表面两端通过镀膜机沉积金属形成两个金属电极4,且在步骤S30中石墨烯薄膜表面图案化形成石墨烯条带的两端分别连接这两个金属电极。
S50:在石墨烯薄膜经图案化的表面进行量子点图案化。
本实施例中,在经过步骤S40后的石墨烯薄膜3经图案化的表面覆盖光刻胶,再在需要覆盖量子点的位置进行光刻,利用旋涂装置在光刻的位置上面覆盖量子点,量子点需要与两个金属电极中的一个接触相连,再通过曝光,洗胶等方法去除多余的光刻胶,留下特定位置的量子点。
在一具体实施例中,根据上述步骤,在石墨烯薄膜3上利用旋涂工艺覆盖量子点A和量子点B,使量子点A,量子点B分别覆盖在石墨烯带的两侧并分别与两侧的两个金属电极4接触,然后将多余的光刻胶去除得到两种不同量子点非均匀覆盖的光电器件,其结构示意图如图2所示。在一些实施例中,量子点A与量子点B的覆盖区域接触即可,优选地,本实施例中量子点A与量子点B设置有少量重叠,量子点A与量子点B分别同石墨烯薄膜产生不同的photogating效应,造成不对称从而形成内建电场实现零偏压工作,其中,石墨烯条带用于转移电子,而量子点A与量子点B的重叠可以使电势变化平缓。
在一实施中,也可以根据上述步骤S10至步骤S50的顺序制作单一量子点非均匀覆盖的光电器件,图3为其结构示意图,只在石墨烯薄膜3上利用旋涂工艺覆盖量子点A,使量子点A覆盖区域的一端与石墨烯薄膜3上的两个金属电极4中任意一个接触即可,,本实施例中,量子点A与石墨烯薄膜产生photogating效应,与没有覆盖量子点A的区域之间不对称形成内建电场实现零偏压工作。
上面结合附图对本发明的实施例进行了描述,但是本发明并不局限于上述的具体实施方式,上述的具体实施方式仅仅是示意性的,而不是限制性的,本领域的普通技术人员在本发明的启示下,在不脱离本发明宗旨和权利要求所保护的范围情况下,还可做出很多形式,这些均属于本发明的保护之内。
Claims (10)
1.一种零偏压工作石墨烯光电器件的制备方法,其特征在于,包括以下步骤:
(1)利用化学气相沉积法生长制备石墨烯薄膜;
(2)转移所述石墨烯薄膜至预先制备的氧化衬底表面;
(3)在所述石墨烯薄膜表面图案化形成石墨烯条带结构;
(4)在所述石墨烯薄膜表面的两端沉积金属形成两个金属电极;
(5)在所述石墨烯薄膜经图案化的表面进行量子点图案化。
2.根据权利要求1所述的制备方法,其特征在于,所述步骤(2)中采用湿法转移技术转移所述石墨烯薄膜。
3.根据权利要求1所述的制备方法,其特征在于,所述步骤(2)中所述氧化衬底通过在纯净的衬底表面制备氧化层得到,其中,衬底的材料为硅,玻璃、石英中的一种。
4.根据权利要求1所述的制备方法,其特征在于,所述步骤(3)利用光刻曝光技术及刻蚀技术在所述石墨烯薄膜表面图案化形成石墨烯条带结构;
其中,所述石墨烯条带两端分别连接两端的金属电极。
5.根据权利要求1所述的制备方法,其特征在于,所述步骤(4)中利用微纳光刻曝光工艺在所述石墨烯薄膜表面两端通过镀膜机沉积金属形成两个金属电极。
6.根据权利要求1所述的制备方法,其特征在于,所述步骤(5)包括:在所述石墨烯薄膜经图案化的表面覆盖光刻胶,并进行光刻;在光刻区域覆盖量子点,所述量子点与所述两个金属电极中的一个接触;去除多余的光刻胶。
7.根据权利要求6所述的制备方法,其特征在于,采用旋涂的方法在光刻区域覆盖量子点。
8.根据权利要求6所述的制备方法,其特征在于,使用碱性溶液和丙酮去除多余的光刻胶。
9.一种零偏压工作石墨烯光电器件,其特征在于,包括硅衬底,所述硅衬底表面覆盖一层氧化层,所述氧化层上铺设石墨烯薄膜,所述石墨烯薄膜两端分别设置有一个金属电极,所述石墨烯薄膜上铺设有量子点,所述量子点与两个金属电极中的一个相连;其中,
所述石墨烯薄膜上表面有图案化形成的石墨烯条带结构,所述石墨烯条带两端分别连接所述金属电极。
10.根据权利要求9所述的光电器件,其特征在于,所述石墨烯薄膜上铺设有两个互相接触不同量子点,所述两个不同量子点分别与两个金属电极之一相连。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911317964.8A CN110957396B (zh) | 2019-12-19 | 2019-12-19 | 一种零偏压工作石墨烯光电器件及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911317964.8A CN110957396B (zh) | 2019-12-19 | 2019-12-19 | 一种零偏压工作石墨烯光电器件及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110957396A true CN110957396A (zh) | 2020-04-03 |
CN110957396B CN110957396B (zh) | 2021-06-18 |
Family
ID=69982911
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201911317964.8A Active CN110957396B (zh) | 2019-12-19 | 2019-12-19 | 一种零偏压工作石墨烯光电器件及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110957396B (zh) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150364545A1 (en) * | 2014-06-17 | 2015-12-17 | Samsung Electronics Co., Ltd. | Electronic device including graphene and quantum dots |
CN105957955A (zh) * | 2016-07-19 | 2016-09-21 | 中国科学院重庆绿色智能技术研究院 | 一种基于石墨烯平面结的光电探测器 |
CN206379356U (zh) * | 2016-10-19 | 2017-08-04 | 天津大学 | 基于石墨烯电极的量子点垂直沟道场效应管 |
-
2019
- 2019-12-19 CN CN201911317964.8A patent/CN110957396B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150364545A1 (en) * | 2014-06-17 | 2015-12-17 | Samsung Electronics Co., Ltd. | Electronic device including graphene and quantum dots |
CN105957955A (zh) * | 2016-07-19 | 2016-09-21 | 中国科学院重庆绿色智能技术研究院 | 一种基于石墨烯平面结的光电探测器 |
CN206379356U (zh) * | 2016-10-19 | 2017-08-04 | 天津大学 | 基于石墨烯电极的量子点垂直沟道场效应管 |
Non-Patent Citations (6)
Title |
---|
BEIYUN LIU等: "Self-powered and fast photodetector based on graphene/MoSe2/ Au heterojunction", 《SUPERLATTICES AND MICROSTRUCTURES》 * |
HUANG JING WEI LI 等: "Enhanced photoresponsivity of the GOQDs decorated WS2 photodetector", 《MATERIALS RESEARCH EXPRESS》 * |
TAE JIN YOO等: "Zero-Bias Operation of CVD Graphene Photodetector with Asymmetric Metal Contacts", 《ACS PHOTONICS》 * |
WANHUI WU等: "Self-powered photovoltaic photodetector established on lateral monolayer MoS2-WS2 heterostructures", 《NANO ENERGY》 * |
YONGLI CHE等: "High-performance PbS quantum dot vertical field-effect phototransistor using graphene as a transparent electrode", 《APPLIED PHYSICS LETTERS》 * |
ZHENHUA SUN等: "Infrared Photodetectors Based on CVD-Grown Graphene and PbS Quantum Dots with Ultrahigh Responsivity", 《ADVANCED MATERIALS》 * |
Also Published As
Publication number | Publication date |
---|---|
CN110957396B (zh) | 2021-06-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102160192B (zh) | 使用直接图案化的无针孔掩膜层制作太阳能电池的方法 | |
JP5863391B2 (ja) | 結晶シリコン系太陽電池の製造方法 | |
CN107342345A (zh) | 一种基于铁电栅介质和薄层二硫化钼沟道的光电晶体管 | |
CN107146830B (zh) | 一种制备柔性透明的石墨烯/硅金属-半导体-金属光电探测器的方法 | |
CN108878544B (zh) | 硅基光电探测器及其制作方法 | |
JP6817764B2 (ja) | 太陽電池セル、及び太陽電池セルの製造方法 | |
CN105655420B (zh) | 石墨烯光吸收特性的玻璃基波导型光电探测器及制备方法 | |
JP5584845B1 (ja) | 太陽電池およびその製造方法、ならびに太陽電池モジュール | |
CN107154438A (zh) | 一种以氟化氮掺杂石墨烯为吸收层的紫外雪崩光电探测器 | |
CN114023844A (zh) | 一种自驱动光电探测器及其制备方法 | |
CN117393646A (zh) | 一种光伏电池电极的制作方法 | |
CN107170842A (zh) | 光电探测结构及其制作方法、光电探测器 | |
JP2006156646A (ja) | 太陽電池の製造方法 | |
US20080276986A1 (en) | Photolithography Method For Contacting Thin-Film Semiconductor Structures | |
CN110957396B (zh) | 一种零偏压工作石墨烯光电器件及其制备方法 | |
JP2018050005A (ja) | シリコン基板の製造方法 | |
JP2014072209A (ja) | 光電変換素子および光電変換素子の製造方法 | |
CN113471324B (zh) | 一种基于石墨烯同质结的宽波段光电探测器及其制备方法 | |
AU2018253508A1 (en) | Solar cell and preparation method thereof | |
JP2014183073A (ja) | 光電変換素子および光電変換素子の製造方法 | |
JP2013168605A (ja) | 太陽電池の製造方法 | |
KR101154095B1 (ko) | 태양 전지 및 그 제조 방법 | |
JP7241173B2 (ja) | 素子の製造方法 | |
JP7169440B2 (ja) | 太陽電池の製造方法および太陽電池 | |
WO2020137582A1 (ja) | 太陽電池の製造方法および太陽電池の製造装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |