CN110957328A - 覆晶薄膜及显示器 - Google Patents
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- 239000004642 Polyimide Substances 0.000 claims abstract description 40
- 229920001721 polyimide Polymers 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims description 23
- 229910000679 solder Inorganic materials 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- 238000005452 bending Methods 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 238000005336 cracking Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 230000008719 thickening Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
本发明提供了一种覆晶薄膜及显示器,所述覆晶薄膜包括:金属层;以及第一聚酰亚胺层以及第二聚酰亚胺层,分别覆盖所述金属层的下表面及上表面。本发明藉由通过聚酰亚胺层涂布工艺,在覆晶薄膜的金属层两侧涂布聚酰亚胺层,避免经过端子弯曲处理后电路走线开裂损伤,提高产品信赖度,赋予产品窄边框设计优势。
Description
技术领域
本发明涉及一种显示技术,尤其涉及一种可提升产品信赖度的覆晶薄膜及显示器。
背景技术
目前手机屏幕窄边框设计已经成为市场主流,为了满足市场,需要用到覆晶薄膜(Chip On Flex or Chip On Film,COF)材料以满足边框设计。图1是现有的显示器的示意图,该显示器包括覆晶薄膜100,所述覆晶薄膜100的叠层结构依序包括:绿油层101、铜层102、以及聚酰亚胺(Polyimide,PI)层103。在现有的显示器中,由于覆晶薄膜100材料薄,产品在弯折后,铜层102中的铜线路只有单侧PI层103保护,铜线路另一侧没有做PI层保护容易受外力作用,导致使覆晶薄膜100表面开裂损伤,造成产品功能不良。
为了解决习知显示器的问题,亟需一种可提升产品信赖度的覆晶薄膜。
发明内容
有鉴于此,本发明提供一种覆晶薄膜及显示器,藉由通过聚酰亚胺(Polyimide,PI)层涂布工艺,在覆晶薄膜(Chip On Flex or Chip On Film,COF)的金属层两侧涂布聚酰亚胺层,使COF表面拥有柔性支撑保护作用,并且加厚保护金属层中的电路走线,避免经过端子弯曲处理后电路走线开裂损伤,提高产品信赖度,赋予产品窄边框设计优势。
依据本发明一实施例,本发明提供一种覆晶薄膜,包括:金属层;以及第一聚酰亚胺层以及第二聚酰亚胺层,分别覆盖所述金属层的下表面及上表面。
在本发明的一实施例中,所述覆晶薄膜还包括防焊层,配置于所述金属层与所述第二聚酰亚胺层之间。
在本发明的一实施例中,所述覆晶薄膜还包括防焊层,配置于所述第二聚酰亚胺层远离所述金属层的表面上。
在本发明的一实施例中,所述金属层的材料包括铜,以及所述防焊层的材料包括光致阻焊剂。
在本发明的一实施例中,所述光致阻焊剂包括丙烯酸低聚物。
依据本发明另一实施例,本发明还提供一种显示器,包括:电晶体基板;彩膜基板,配置于部份的所述电晶体基板上,露出所述电晶体基板的边缘区域;以及覆晶薄膜,配置于所述电晶体基板的所述边缘区域上,其中所述覆晶薄膜包括:金属层;以及第一聚酰亚胺层和第二聚酰亚胺层,分别覆盖所述金属层的下表面及上表面。
在本发明的一实施例中,所述覆晶薄膜还包括防焊层,配置于所述金属层与所述第二聚酰亚胺层之间。
在本发明的一实施例中,所述覆晶薄膜还包括防焊层,配置于所述第二聚酰亚胺层远离所述金属层的表面上。
在本发明的一实施例中,所述金属层的材料包括铜,以及所述防焊层的材料包括光致阻焊剂。
在本发明的一实施例中,所述覆晶薄膜位于所述显示器的边缘,并且弯折至所述电晶体基板的下方。
附图说明
为了更清楚地说明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单介绍,显而易见地,下面描述中的附图仅仅是发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1现有的显示器的示意图。
图2为依据本发明的一实施例之显示器的示意图。
图3为依据本发明的另一实施例之显示器的示意图。
具体实施方式
为让本发明的上述内容能更明显易懂,下文特举优选实施例,并配合所附图式作详细说明。
以下各实施例的说明是参考附加的图示,用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语,例如[纵向]、[横向]、[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。在图中,结构相似的单元是用以相同标号表示。
本发明提供一种覆晶薄膜及显示器,藉由通过聚酰亚胺(Polyimide,PI)层涂布工艺,在覆晶薄膜(Chip On Flex or Chip On Film,COF)的金属层两侧涂布聚酰亚胺层,使COF表面拥有柔性支撑保护作用,并且加厚保护金属层中的电路走线,避免经过端子弯曲处理后电路走线开裂损伤,提高产品信赖度,赋予产品窄边框设计优势。
实施例1
依据本发明的实施例1,本发明提供了一种显示器200,参见图2。图2为依据本发明的一实施例之显示器的示意图。如图2所示,具体而言,本发明提供一种显示器200,包括:电晶体基板210;彩膜基板220,配置于部份的所述电晶体基板210上,露出所述电晶体基板210的边缘区域;以及覆晶薄膜230,配置于所述电晶体基板210的所述边缘区域上,其中所述覆晶薄膜230包括:金属层231;以及第一聚酰亚胺层232和第二聚酰亚胺层233,分别覆盖所述金属层231的下表面及上表面。
在本发明的实施例1中,所述覆晶薄膜230还包括防焊层234,配置于所述第二聚酰亚胺层233远离所述金属层231的表面。
实施例2
依据本发明的实施例2,本发明提供了一种显示器300,参见图3。图3为依据本发明的一实施例之显示器的示意图。如图3所示,具体而言,本发明提供一种显示器300,包括:电晶体基板210;彩膜基板220,配置于部份的所述电晶体基板210上,露出所述电晶体基板210的边缘区域;以及覆晶薄膜230,配置于所述电晶体基板210的所述边缘区域上,其中所述覆晶薄膜230包括:金属层231;以及第一聚酰亚胺层232和第二聚酰亚胺层233,分别覆盖所述金属层231的下表面及上表面。
在本发明的实施例2中,所述覆晶薄膜230还包括防焊层234,配置于所述金属层231与所述第二聚酰亚胺层233之间上。
在本发明的实施例1或2中,所述金属层231的材料可包括铜,以及所述防焊层234的材料可包括光致阻焊剂,所述光致阻焊剂可为选自绿油,其成分例如可包括丙烯酸低聚物。
一并参见图2及图3,具体而言,在本发明的所提供的实施例1及实施例2中,所述覆晶薄膜230位于所述显示器200及显示器300的边缘,并且弯折至所述电晶体基板210的下方。
据此,本发明提供一种覆晶薄膜及显示器,藉由通过聚酰亚胺(Polyimide,PI)层涂布工艺,在覆晶薄膜(Chip On Flex or Chip On Film,COF)的金属层两侧涂布聚酰亚胺层,使COF表面拥有柔性支撑保护作用,并且加厚保护金属层中的电路走线,提高COF的柔韧性,避免经过端子弯曲处理后电路走线开裂损伤,提高产品信赖度,赋予产品窄边框设计优势。
综上所述,虽然本发明已以优选实施例揭露如上,但上述优选实施例并非用以限制本发明,本领域的普通技术人员,在不脱离本发明的精神和范围内,均可作各种更动与润饰,因此本发明的保护范围以权利要求界定的范围为准。
Claims (10)
1.一种覆晶薄膜,其特征在于,包括:
金属层;以及
第一聚酰亚胺层以及第二聚酰亚胺层,分别覆盖所述金属层的下表面及上表面。
2.根据权利要求1所述的覆晶薄膜,其特征在于,所述覆晶薄膜还包括防焊层,配置于所述金属层与所述第二聚酰亚胺层之间。
3.根据权利要求1所述的覆晶薄膜,其特征在于,所述覆晶薄膜还包括防焊层,配置于所述第二聚酰亚胺层远离所述金属层的表面上。
4.根据权利要求1所述的覆晶薄膜,其特征在于,所述金属层的材料包括铜,以及所述防焊层的材料包括光致阻焊剂。
5.根据权利要求4所述的覆晶薄膜,其特征在于,所述光致阻焊剂包括丙烯酸低聚物。
6.一种显示器,其特征在于,包括:
电晶体基板;
彩膜基板,配置于部份的所述电晶体基板上,露出所述电晶体基板的边缘区域;以及
覆晶薄膜,配置于所述电晶体基板的所述边缘区域上,
其中所述覆晶薄膜包括:金属层;以及第一聚酰亚胺层和第二聚酰亚胺层,分别覆盖所述金属层的下表面及上表面。
7.根据权利要求6所述的显示器,其特征在于,所述覆晶薄膜还包括防焊层,配置于所述金属层与所述第二聚酰亚胺层之间。
8.根据权利要求6所述的显示器,其特征在于,所述覆晶薄膜还包括防焊层,配置于所述第二聚酰亚胺层远离所述金属层的表面上。
9.根据权利要求6所述的显示器,其特征在于,所述金属层的材料包括铜,以及所述防焊层的材料包括光致阻焊剂。
10.根据权利要求6所述的显示器,其特征在于,所述覆晶薄膜位于所述显示器的边缘,并且弯折至所述电晶体基板的下方。
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CN111755389A (zh) * | 2020-06-29 | 2020-10-09 | 无锡睿勤科技有限公司 | 覆晶薄膜组件 |
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US20140306348A1 (en) * | 2013-04-15 | 2014-10-16 | Samsung Display Co., Ltd. | Chip on film and display device having the same |
CN105845637A (zh) * | 2014-11-07 | 2016-08-10 | 瑞鼎科技股份有限公司 | 双面覆晶薄膜封装结构及其制造方法 |
CN107645824A (zh) * | 2016-07-22 | 2018-01-30 | Lg伊诺特有限公司 | 柔性电路板、覆晶薄膜模块和包括柔性电路板的电子设备 |
CN110277018A (zh) * | 2019-06-24 | 2019-09-24 | 武汉华星光电技术有限公司 | 显示面板及其制备方法 |
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Patent Citations (4)
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US20140306348A1 (en) * | 2013-04-15 | 2014-10-16 | Samsung Display Co., Ltd. | Chip on film and display device having the same |
CN105845637A (zh) * | 2014-11-07 | 2016-08-10 | 瑞鼎科技股份有限公司 | 双面覆晶薄膜封装结构及其制造方法 |
CN107645824A (zh) * | 2016-07-22 | 2018-01-30 | Lg伊诺特有限公司 | 柔性电路板、覆晶薄膜模块和包括柔性电路板的电子设备 |
CN110277018A (zh) * | 2019-06-24 | 2019-09-24 | 武汉华星光电技术有限公司 | 显示面板及其制备方法 |
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CN111755389A (zh) * | 2020-06-29 | 2020-10-09 | 无锡睿勤科技有限公司 | 覆晶薄膜组件 |
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