CN110957328A - 覆晶薄膜及显示器 - Google Patents

覆晶薄膜及显示器 Download PDF

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CN110957328A
CN110957328A CN201911201006.4A CN201911201006A CN110957328A CN 110957328 A CN110957328 A CN 110957328A CN 201911201006 A CN201911201006 A CN 201911201006A CN 110957328 A CN110957328 A CN 110957328A
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film
chip
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metal layer
polyimide
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CN110957328B (zh
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陈毅成
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Wuhan China Star Optoelectronics Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)

Abstract

本发明提供了一种覆晶薄膜及显示器,所述覆晶薄膜包括:金属层;以及第一聚酰亚胺层以及第二聚酰亚胺层,分别覆盖所述金属层的下表面及上表面。本发明藉由通过聚酰亚胺层涂布工艺,在覆晶薄膜的金属层两侧涂布聚酰亚胺层,避免经过端子弯曲处理后电路走线开裂损伤,提高产品信赖度,赋予产品窄边框设计优势。

Description

覆晶薄膜及显示器
技术领域
本发明涉及一种显示技术,尤其涉及一种可提升产品信赖度的覆晶薄膜及显示器。
背景技术
目前手机屏幕窄边框设计已经成为市场主流,为了满足市场,需要用到覆晶薄膜(Chip On Flex or Chip On Film,COF)材料以满足边框设计。图1是现有的显示器的示意图,该显示器包括覆晶薄膜100,所述覆晶薄膜100的叠层结构依序包括:绿油层101、铜层102、以及聚酰亚胺(Polyimide,PI)层103。在现有的显示器中,由于覆晶薄膜100材料薄,产品在弯折后,铜层102中的铜线路只有单侧PI层103保护,铜线路另一侧没有做PI层保护容易受外力作用,导致使覆晶薄膜100表面开裂损伤,造成产品功能不良。
为了解决习知显示器的问题,亟需一种可提升产品信赖度的覆晶薄膜。
发明内容
有鉴于此,本发明提供一种覆晶薄膜及显示器,藉由通过聚酰亚胺(Polyimide,PI)层涂布工艺,在覆晶薄膜(Chip On Flex or Chip On Film,COF)的金属层两侧涂布聚酰亚胺层,使COF表面拥有柔性支撑保护作用,并且加厚保护金属层中的电路走线,避免经过端子弯曲处理后电路走线开裂损伤,提高产品信赖度,赋予产品窄边框设计优势。
依据本发明一实施例,本发明提供一种覆晶薄膜,包括:金属层;以及第一聚酰亚胺层以及第二聚酰亚胺层,分别覆盖所述金属层的下表面及上表面。
在本发明的一实施例中,所述覆晶薄膜还包括防焊层,配置于所述金属层与所述第二聚酰亚胺层之间。
在本发明的一实施例中,所述覆晶薄膜还包括防焊层,配置于所述第二聚酰亚胺层远离所述金属层的表面上。
在本发明的一实施例中,所述金属层的材料包括铜,以及所述防焊层的材料包括光致阻焊剂。
在本发明的一实施例中,所述光致阻焊剂包括丙烯酸低聚物。
依据本发明另一实施例,本发明还提供一种显示器,包括:电晶体基板;彩膜基板,配置于部份的所述电晶体基板上,露出所述电晶体基板的边缘区域;以及覆晶薄膜,配置于所述电晶体基板的所述边缘区域上,其中所述覆晶薄膜包括:金属层;以及第一聚酰亚胺层和第二聚酰亚胺层,分别覆盖所述金属层的下表面及上表面。
在本发明的一实施例中,所述覆晶薄膜还包括防焊层,配置于所述金属层与所述第二聚酰亚胺层之间。
在本发明的一实施例中,所述覆晶薄膜还包括防焊层,配置于所述第二聚酰亚胺层远离所述金属层的表面上。
在本发明的一实施例中,所述金属层的材料包括铜,以及所述防焊层的材料包括光致阻焊剂。
在本发明的一实施例中,所述覆晶薄膜位于所述显示器的边缘,并且弯折至所述电晶体基板的下方。
附图说明
为了更清楚地说明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单介绍,显而易见地,下面描述中的附图仅仅是发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1现有的显示器的示意图。
图2为依据本发明的一实施例之显示器的示意图。
图3为依据本发明的另一实施例之显示器的示意图。
具体实施方式
为让本发明的上述内容能更明显易懂,下文特举优选实施例,并配合所附图式作详细说明。
以下各实施例的说明是参考附加的图示,用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语,例如[纵向]、[横向]、[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。在图中,结构相似的单元是用以相同标号表示。
本发明提供一种覆晶薄膜及显示器,藉由通过聚酰亚胺(Polyimide,PI)层涂布工艺,在覆晶薄膜(Chip On Flex or Chip On Film,COF)的金属层两侧涂布聚酰亚胺层,使COF表面拥有柔性支撑保护作用,并且加厚保护金属层中的电路走线,避免经过端子弯曲处理后电路走线开裂损伤,提高产品信赖度,赋予产品窄边框设计优势。
实施例1
依据本发明的实施例1,本发明提供了一种显示器200,参见图2。图2为依据本发明的一实施例之显示器的示意图。如图2所示,具体而言,本发明提供一种显示器200,包括:电晶体基板210;彩膜基板220,配置于部份的所述电晶体基板210上,露出所述电晶体基板210的边缘区域;以及覆晶薄膜230,配置于所述电晶体基板210的所述边缘区域上,其中所述覆晶薄膜230包括:金属层231;以及第一聚酰亚胺层232和第二聚酰亚胺层233,分别覆盖所述金属层231的下表面及上表面。
在本发明的实施例1中,所述覆晶薄膜230还包括防焊层234,配置于所述第二聚酰亚胺层233远离所述金属层231的表面。
实施例2
依据本发明的实施例2,本发明提供了一种显示器300,参见图3。图3为依据本发明的一实施例之显示器的示意图。如图3所示,具体而言,本发明提供一种显示器300,包括:电晶体基板210;彩膜基板220,配置于部份的所述电晶体基板210上,露出所述电晶体基板210的边缘区域;以及覆晶薄膜230,配置于所述电晶体基板210的所述边缘区域上,其中所述覆晶薄膜230包括:金属层231;以及第一聚酰亚胺层232和第二聚酰亚胺层233,分别覆盖所述金属层231的下表面及上表面。
在本发明的实施例2中,所述覆晶薄膜230还包括防焊层234,配置于所述金属层231与所述第二聚酰亚胺层233之间上。
在本发明的实施例1或2中,所述金属层231的材料可包括铜,以及所述防焊层234的材料可包括光致阻焊剂,所述光致阻焊剂可为选自绿油,其成分例如可包括丙烯酸低聚物。
一并参见图2及图3,具体而言,在本发明的所提供的实施例1及实施例2中,所述覆晶薄膜230位于所述显示器200及显示器300的边缘,并且弯折至所述电晶体基板210的下方。
据此,本发明提供一种覆晶薄膜及显示器,藉由通过聚酰亚胺(Polyimide,PI)层涂布工艺,在覆晶薄膜(Chip On Flex or Chip On Film,COF)的金属层两侧涂布聚酰亚胺层,使COF表面拥有柔性支撑保护作用,并且加厚保护金属层中的电路走线,提高COF的柔韧性,避免经过端子弯曲处理后电路走线开裂损伤,提高产品信赖度,赋予产品窄边框设计优势。
综上所述,虽然本发明已以优选实施例揭露如上,但上述优选实施例并非用以限制本发明,本领域的普通技术人员,在不脱离本发明的精神和范围内,均可作各种更动与润饰,因此本发明的保护范围以权利要求界定的范围为准。

Claims (10)

1.一种覆晶薄膜,其特征在于,包括:
金属层;以及
第一聚酰亚胺层以及第二聚酰亚胺层,分别覆盖所述金属层的下表面及上表面。
2.根据权利要求1所述的覆晶薄膜,其特征在于,所述覆晶薄膜还包括防焊层,配置于所述金属层与所述第二聚酰亚胺层之间。
3.根据权利要求1所述的覆晶薄膜,其特征在于,所述覆晶薄膜还包括防焊层,配置于所述第二聚酰亚胺层远离所述金属层的表面上。
4.根据权利要求1所述的覆晶薄膜,其特征在于,所述金属层的材料包括铜,以及所述防焊层的材料包括光致阻焊剂。
5.根据权利要求4所述的覆晶薄膜,其特征在于,所述光致阻焊剂包括丙烯酸低聚物。
6.一种显示器,其特征在于,包括:
电晶体基板;
彩膜基板,配置于部份的所述电晶体基板上,露出所述电晶体基板的边缘区域;以及
覆晶薄膜,配置于所述电晶体基板的所述边缘区域上,
其中所述覆晶薄膜包括:金属层;以及第一聚酰亚胺层和第二聚酰亚胺层,分别覆盖所述金属层的下表面及上表面。
7.根据权利要求6所述的显示器,其特征在于,所述覆晶薄膜还包括防焊层,配置于所述金属层与所述第二聚酰亚胺层之间。
8.根据权利要求6所述的显示器,其特征在于,所述覆晶薄膜还包括防焊层,配置于所述第二聚酰亚胺层远离所述金属层的表面上。
9.根据权利要求6所述的显示器,其特征在于,所述金属层的材料包括铜,以及所述防焊层的材料包括光致阻焊剂。
10.根据权利要求6所述的显示器,其特征在于,所述覆晶薄膜位于所述显示器的边缘,并且弯折至所述电晶体基板的下方。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111755389A (zh) * 2020-06-29 2020-10-09 无锡睿勤科技有限公司 覆晶薄膜组件

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140306348A1 (en) * 2013-04-15 2014-10-16 Samsung Display Co., Ltd. Chip on film and display device having the same
CN105845637A (zh) * 2014-11-07 2016-08-10 瑞鼎科技股份有限公司 双面覆晶薄膜封装结构及其制造方法
CN107645824A (zh) * 2016-07-22 2018-01-30 Lg伊诺特有限公司 柔性电路板、覆晶薄膜模块和包括柔性电路板的电子设备
CN110277018A (zh) * 2019-06-24 2019-09-24 武汉华星光电技术有限公司 显示面板及其制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140306348A1 (en) * 2013-04-15 2014-10-16 Samsung Display Co., Ltd. Chip on film and display device having the same
CN105845637A (zh) * 2014-11-07 2016-08-10 瑞鼎科技股份有限公司 双面覆晶薄膜封装结构及其制造方法
CN107645824A (zh) * 2016-07-22 2018-01-30 Lg伊诺特有限公司 柔性电路板、覆晶薄膜模块和包括柔性电路板的电子设备
CN110277018A (zh) * 2019-06-24 2019-09-24 武汉华星光电技术有限公司 显示面板及其制备方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111755389A (zh) * 2020-06-29 2020-10-09 无锡睿勤科技有限公司 覆晶薄膜组件

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