CN110931606A - 垂直型发光二极管及其制造方法 - Google Patents
垂直型发光二极管及其制造方法 Download PDFInfo
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- CN110931606A CN110931606A CN201911329562.XA CN201911329562A CN110931606A CN 110931606 A CN110931606 A CN 110931606A CN 201911329562 A CN201911329562 A CN 201911329562A CN 110931606 A CN110931606 A CN 110931606A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 38
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 13
- 230000007423 decrease Effects 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 238000007788 roughening Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 67
- 239000002356 single layer Substances 0.000 claims 2
- 230000003247 decreasing effect Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (12)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201911329562.XA CN110931606B (zh) | 2019-12-20 | 2019-12-20 | 垂直型发光二极管及其制造方法 |
Applications Claiming Priority (1)
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CN201911329562.XA CN110931606B (zh) | 2019-12-20 | 2019-12-20 | 垂直型发光二极管及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN110931606A true CN110931606A (zh) | 2020-03-27 |
CN110931606B CN110931606B (zh) | 2021-04-20 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112993116A (zh) * | 2020-12-09 | 2021-06-18 | 重庆康佳光电技术研究院有限公司 | 发光器件制作方法、发光器件以及显示器件 |
CN116093226A (zh) * | 2023-04-10 | 2023-05-09 | 江西兆驰半导体有限公司 | 发光二极管外延片及其制备方法、发光二极管 |
WO2023103756A1 (zh) * | 2021-12-10 | 2023-06-15 | 厦门市三安光电科技有限公司 | 微发光二极管及其制备方法、微发光元件和显示器 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009064978A (ja) * | 2007-09-06 | 2009-03-26 | Sharp Corp | GaN系化合物半導体発光装置およびその製造方法 |
CN101800273A (zh) * | 2009-02-11 | 2010-08-11 | 立景光电股份有限公司 | 形成横向分布发光二极管的方法 |
CN102569537A (zh) * | 2010-12-10 | 2012-07-11 | 上海蓝光科技有限公司 | 一种垂直结构发光二极管芯片的制造方法 |
TWI481073B (zh) * | 2012-05-07 | 2015-04-11 | Fitilite S Pte Ltd | 半導體裝置及其製造方法 |
CN106165127A (zh) * | 2014-04-07 | 2016-11-23 | Lg伊诺特有限公司 | 发光器件和具有该发光器件的照明系统 |
CN108630792A (zh) * | 2018-04-23 | 2018-10-09 | 中国科学院半导体研究所 | 基于Ga2O3衬底的垂直结构紫外LED及其制备方法 |
-
2019
- 2019-12-20 CN CN201911329562.XA patent/CN110931606B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009064978A (ja) * | 2007-09-06 | 2009-03-26 | Sharp Corp | GaN系化合物半導体発光装置およびその製造方法 |
CN101800273A (zh) * | 2009-02-11 | 2010-08-11 | 立景光电股份有限公司 | 形成横向分布发光二极管的方法 |
CN102569537A (zh) * | 2010-12-10 | 2012-07-11 | 上海蓝光科技有限公司 | 一种垂直结构发光二极管芯片的制造方法 |
TWI481073B (zh) * | 2012-05-07 | 2015-04-11 | Fitilite S Pte Ltd | 半導體裝置及其製造方法 |
CN106165127A (zh) * | 2014-04-07 | 2016-11-23 | Lg伊诺特有限公司 | 发光器件和具有该发光器件的照明系统 |
CN108630792A (zh) * | 2018-04-23 | 2018-10-09 | 中国科学院半导体研究所 | 基于Ga2O3衬底的垂直结构紫外LED及其制备方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112993116A (zh) * | 2020-12-09 | 2021-06-18 | 重庆康佳光电技术研究院有限公司 | 发光器件制作方法、发光器件以及显示器件 |
WO2023103756A1 (zh) * | 2021-12-10 | 2023-06-15 | 厦门市三安光电科技有限公司 | 微发光二极管及其制备方法、微发光元件和显示器 |
CN116093226A (zh) * | 2023-04-10 | 2023-05-09 | 江西兆驰半导体有限公司 | 发光二极管外延片及其制备方法、发光二极管 |
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CN110931606B (zh) | 2021-04-20 |
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Effective date of registration: 20230324 Address after: No.1088 Xueyuan Avenue, Taoyuan Street, Nanshan District, Shenzhen, Guangdong 518055 Patentee after: Southern University of Science and Technology Address before: 518000 building 11, Jinxiu Dadi, 121 hudipai, Guanhu street, Longhua District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN THIRD GENERATION SEMICONDUCTOR Research Institute |
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Effective date of registration: 20230710 Address after: Building 1, Building 409, No. 1310 Kukeng Sightseeing Road, Kukeng Community, Guanlan Street, Longhua District, Shenzhen City, Guangdong Province, 518000 Patentee after: Naweilang Technology (Shenzhen) Co.,Ltd. Address before: No.1088 Xueyuan Avenue, Taoyuan Street, Nanshan District, Shenzhen, Guangdong 518055 Patentee before: Southern University of Science and Technology |
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