CN1109218A - Electronic units with semiconductor slugs - Google Patents

Electronic units with semiconductor slugs Download PDF

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Publication number
CN1109218A
CN1109218A CN94115352A CN94115352A CN1109218A CN 1109218 A CN1109218 A CN 1109218A CN 94115352 A CN94115352 A CN 94115352A CN 94115352 A CN94115352 A CN 94115352A CN 1109218 A CN1109218 A CN 1109218A
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CN
China
Prior art keywords
semiconductor chip
welding wire
circuit element
lead terminal
outside lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN94115352A
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Chinese (zh)
Other versions
CN1042680C (en
Inventor
粟山长治郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
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Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of CN1109218A publication Critical patent/CN1109218A/en
Application granted granted Critical
Publication of CN1042680C publication Critical patent/CN1042680C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
    • H01H85/041—Fuses, i.e. expendable parts of the protective device, e.g. cartridges characterised by the type
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Abstract

The invention discloses an electronic part, which likes a transistor to use a semiconductor chip with at least two electrode terminals; wherein, thin metal wires can be used for connecting the electrode terminals and external-lead terminals which are matched with the electrode terminals. At least a part of thin metal wires are welding wires, two ends of which are in ball shape. Two ball-shaped parts are welded on the electrode terminal at the output side of a circuit element and external-lead terminals; therefore the welding wires can form fuses for the semiconductor chip.

Description

Electronic units with semiconductor slugs
The present invention relates to electronic unit, this electronic unit has used the semiconductor chip that has at least two output electrode terminals as transistor.
As everyone knows, transistor as an example of the electronic unit that has used this semiconductor chip is to constitute like this: earlier the semiconductor chip that forms circuit element is installed on the base stage substrate, then, at collector electrode terminal and two output electrode terminals of emitter electrode terminal of the circuit element of this semiconductor chip with distinguish with it between the relative outside lead terminal, Au, the contour melting point of Al or Cu is after metal metal fine is electrically connected with the wire bond method, by they formed integral body, module or the pipe cap made with thermosetting synthetic resin encapsulate it.
Yet, adopt to give and to have used above-mentioned the sort of transistorized circuit to pass to high electric current or high-tension way in addition, when adding big power to the transistor in this circuit, in this transistor, the semiconductor chip that forms this transistor device will generate heat and form high temperature, and its characteristic will be subjected to very big influence.
But, in the transistor of prior art, since be the collector electrode terminal of the circuit element in the semiconductor chip and emitter electrode terminal and accordingly between separately the outside lead terminal, by Au, the filament that the contour melting point metal of Al or copper is made is electrically connected with the wire bond method and this structure that forms, can not prevent to rise because of the temperature of the high-power semiconductor chip that causes, so, under the situation that the semiconductor chip temperature is uprised, circuit element in this semiconductor chip will play the effect different with original function, the circuit that is connected to the load system on collector electrode terminal and the emitter electrode terminal in this circuit element of big current direction is got on, usually make other the electronic unit in the circuit that is arranged at this load system be subjected to fatal infringement.
So, open flat 5-235080 communique as the spy of prior art and proposed such suggestion: carry out wire bond being contained between semiconductor chip on the base stage substrate and the outside lead terminal with welding wire, make this welding wire form Thermal Cutoffs above-mentioned semiconductor chip.
The suggestion of this prior art has been adopted such method: at first, as shown in figure 15, form spherical part B ' in the lower end of the welding wire B that passes capillary tool A in the wire bond method of carrying out with welding wire.Afterwards, as shown in figure 16,, this spherical part B ' is bonded on the electrode pad D ' on the semiconductor chip D on the base stage substrate C by making above-mentioned capillary tool A to decline.Then, above-mentioned capillary tool A is risen and move to the outside lead terminal directly over.Then, as shown in figure 17, make it facing to outside lead terminal E to make the B on the top, other end of welding wire B to decline " aim at outside lead terminal E, pressure welding is got on by pressurization.
But, in this wire bond method, though the ball B ' that forms by welding wire B top with the crown end pressure welding of welding wire B on the electrode pad D ' of semiconductor chip D, but another top B of above-mentioned welding wire B ", the way that but is to use capillary tool A to pressurize is bonded to outside lead terminal E and upward finishes.As this another top B " when being bonded on the outside lead terminal E, the B of this another top " being extruded into the thickness also thinner than the diameter d of welding wire B is the flat pattern of t, so just formed the bottleneck portion that sectional area has sharply dwindled in this part.
; welding wire B compares with Au silk, Al silk or Cu silk in the wire bond technology that is used in prior art widely; not only resistance is big; melting point is also low; so; when in the middle of welding wire B, existing the bottleneck portion that sectional area as described above sharply dwindles, because current concentration will take place in this bottleneck portion, so even if lower electric current also will become high temperature in this bottleneck portion.
In other words, in aforementioned transistor, the wire bond method of the application welding wire of above-mentioned prior art is used in the wire bond between the side in transistorized collector electrode terminal and the emitter electrode terminal or two sides and the outside lead terminal separately, make this welding wire form time marquis to the Temperature protection line of semiconductor chip, this welding wire makes because of reasons such as big electric currents before temperature rises to assigned temperature at semiconductor chip, because of normally used current value in circuit, the place of above-mentioned bottleneck portion is fused.
And, be in the central bottleneck portion of above-mentioned welding wire.Because the repeating repeatedly of above-mentioned current concentration also reduced its mechanical strength.So welding wire is before the Thermal Cutoffs effect of playing semiconductor chip, even the reasons such as vibration in the common user mode also can break.
Thereby, owing to exist bottleneck portion in the middle of the welding wire of above-mentioned prior art, so use it for when going in the electronic unit that has this semiconductor chips such as transistor, because before the Thermal Cutoffs effect of playing semiconductor chip, played the effect of electric current fuse, moreover, before playing the Temperature protection effect, will break, so the welding wire of above-mentioned prior art exists the problem that can not make it in fact to have as the effect of the Thermal Cutoffs of semiconductor chip.
Task of the present invention is: when being electrically connected between output electrode terminal and its outside lead terminal of circuit element collector terminal and emitter terminal etc. in the semiconductor chip in the electronic units such as transistor with welding wire, infalliblely the above-mentioned welding wire of function endowing to the Thermal Cutoffs of above-mentioned semiconductor chip.
In order to finish this technical task, feature of the present invention is: by the semiconductor chip that forms the circuit element with at least two output electrode terminals, in the electronic unit that constitutes with the corresponding respectively outside lead terminal of each output electrode terminal in the above-mentioned semiconductor chip and the filament that is electrically connected between each output electrode terminal in the foregoing circuit element and its outside lead terminal separately, at least a portion filament in the above-mentioned filament is changed into welding wire, and make spherical part at the two ends of this welding wire, then these two spherical part pressure weldings on the output electrode terminal and outside lead terminal thereof of the circuit element of above-mentioned semiconductor chip, make this welding wire become Thermal Cutoffs to above-mentioned semiconductor chip.
So, because the present invention forms spherical part at the two ends of welding wire earlier, and then these two spherical parts are bonded on the output electrode terminal and outside lead terminal thereof of circuit element of semiconductor chip, thereby, will become the place that the welding wire of the Thermal Cutoffs of above-mentioned semiconductor chip and semiconductor chip and outside lead terminal are carried out pressure welding, just can avoid forming the bottleneck portion that sectional area sharply dwindles, perhaps can be limited in dwindling of cross section among a small circle within.
So, use the present invention, because can be positively the welding wire that in the electronic units such as function endowing transistor of semiconductor chip Thermal Cutoffs the output one lateral electrode terminal of the circuit element of semiconductor chip is electrically connected with its outside lead terminal, simultaneously, can prevent that the fracture of wire that takes place because of vibration under the normal operating condition etc., its effect from being to prevent positively that heating because of the semiconductor chip in the electronic unit from making various electronic units on the circuit of load one side on the output one lateral electrode terminal that is connected this semiconductor chip be subjected to the infringement of secondary.
In addition, by the spherical part of semiconductor chip one side among two spherical parts of welding wire along the axial direction pressure welding of welding wire on the lead terminal of output one side and the spherical part of external terminal one side with the about rectangular direction pressure welding of the axis of welding wire externally on the lead terminal, because welding wire can carry out with welding wire instrument separately the pressure welding of outside lead terminal the pressure welding and the welding wire of semiconductor chip, so be minimized cost because of shortening the wire bond required time.
Fig. 1 is an oblique view, and shown in it is the state that removes in first embodiment of the invention behind the pressing mold.
Fig. 2 is II-II place sectional drawing of Fig. 1.
Fig. 3 has provided first state that carries out wire bond with welding wire.
Fig. 4 has provided the 2nd state that carries out wire bond with welding wire.
Fig. 5 has provided the 3rd state that carries out wire bond with welding wire.
Fig. 6 has provided the 4th state that carries out wire bond with welding wire.
Fig. 7 has provided the 5th state that carries out wire bond with welding wire.
Fig. 8 has provided the 6th state that carries out wire bond with welding wire.
Fig. 9 is an oblique view, and it shows the state that removes in the second embodiment of the present invention behind the pressing mold.
Figure 10 is an oblique view, and it shows the wire bond that carries out with welding wire among second embodiment.
Figure 11 is the oblique view that cuts a part of the 3rd embodiment among explanation the present invention.
Figure 12 is the profile along Figure 11 XII-XII line.
Figure 13 is the equivalent circuit diagram of transistor array.
Figure 14 is the circuit diagram of the equivalence of diode array.
Figure 15 has provided the 1st state that carries out wire bond with the welding wire of prior art.
Figure 16 has provided the 2nd state that carries out wire bond with the welding wire of prior art.
Figure 17 has provided the 3rd state that carries out wire bond with the welding wire of prior art.
Below, with reference to accompanying drawing embodiments of the invention are described.
Embodiment
First embodiment when Fig. 1 and Fig. 2 have provided the present invention is used for high power transistor.
In this figure, label 1 is the base stage substrate made from metallic plate, and it has the substrate external portion lead terminal 2 of making an integral body with it.Semiconductor chip 3 is bonded on the upper surface of this base stage substrate 1, the base stage of the circuit element of this semiconductor chip 3 is electrically connected with the base stage substrate, is formed with transistorized circuit element and the emitter electrode terminal 3a and the collector electrode terminal 3b of the output one lateral electrode terminal of circuit element as a comparison on this semiconductor chip 3.
On the other hand, be provided with the outside lead terminal 4 of emitter and the outside lead terminal 5 of collector electrode in the left and right sides of the outside lead terminal 2 of aforementioned base.These two lead terminals 4 are identical with aforementioned base substrate 1 with 5, are that metallic plate is made.
Between the emitter electrode terminal 3a of the circuit element of the top of the outside lead terminal 4 of above-mentioned emitter and above-mentioned semiconductor chip 3, the filament made with refractory metals such as Au, Al or Cu 6 is electrically connected by wire bond.And between the collector electrode terminal 3b of the circuit element of the top of above-mentioned collector electrode outside lead terminal 5 and semiconductor chip 3, with having welding wire 7 as the Thermal Cutoffs function ' be electrically connected by the wire bond method.
When with this welding wire 7 ' when carrying out wire bond, at first, as shown in Figure 3, the spherical part 7a that forms in the lower end of passing as the solder wire material 7 of up-and-down motion type capillary tool 21 inside of wire bond instrument, by making the down maneuver of above-mentioned capillary tool 21, as shown in Figure 4, be pressed onto on the collector electrode position 3b of above-mentioned semiconductor chip 3, then this spherical part 7a welding wire 7 ' axis direction on extrusion distortion and coupling together.Also have, in the time of this spherical part of pressure welding 7a, add the way of ultrasonic vibration, can shorten the needed time of pressure welding by giving above-mentioned capillary tool 21.
Then, in the moment that makes above-mentioned capillary tool 21 straight risings, as shown in Figure 5, with from the heating and melting means such as hydrogen flame of nozzle 22 ejection the centre of above-mentioned solder wire material 7 fuse into welding wire 7 ', simultaneously, the lower end of welding wire 7 materials and welding wire 7 ' two places, upper end form spherical part 7a and 7b.
Moreover the formation of above-mentioned spherical part 7a and 7b is opened the same of flat 5-235080 communique description with above-mentioned spy, carries out in the anaerobic air-flow.
Finish these items, and as shown in Figure 6, behind the welding wire 7 ' be bonded on the above-mentioned semiconductor chip 3, as shown in Figure 7, this welding wire is curved, feasible spherical part 7b in the top is bonded to collector electrode outside lead terminal 5 and is got on, afterwards, as shown in Figure 8, in the decline process of wire bond instrument 23, with welding wire 7 ' the rectangular approximately direction of axis on, with respect to outside lead terminal 5 this spherical part 7b extrusion molding is approximated the diameter D of welding wire until its thickness t, 7b is bonded on the outside lead terminal 5 this spherical part.
When this spherical part of pressure welding 7b, above-mentioned wire bond instrument 23 is added ultrasonic vibration, then can shorten the pressure welding required time.
Since taked this to welding wire 7 in outside lead terminal 5 pressure weldings ' measure, just can avoid to this welding wire 7 ' the place that connects of outside lead terminal 5 form the bottleneck portion that the anxious brush of sectional area dwindles, perhaps, can be limited in reduced cross-sectional within the little scope.
Moreover, after having finished wire bond like this with welding wire 7 ' carry out, above-mentioned welding wire is coated elastic resins 8 such as silicones ' afterwards, again above-mentioned semiconductor chip 3, filament 6 and welding wire 7 ' etc. all be encapsulated in the module 9 that thermoset synthetic resins such as epoxy resin make, just made finished product.
In this structure, add signal code by the substrate external portion lead terminal 2 of giving semiconductor chip 3, make the circuit element in the semiconductor chip 3 be in such state: it plays a part to make emitter electrode and collector electrode conducting as output one side.When the circuit of the load system on the outside lead terminal 5 of giving the outside lead terminal 4 be connected to emitter and collector electrode adds big electric current or high voltage with ways such as short circuits and adds when high-power for semiconductor chip 3, semiconductor chip 3 will generate heat, and its temperature uprises, because this heating will make above-mentioned welding wire 7 ' fusing.So welding wire 7 ' can make the circuit of above-mentioned load system form open-circuit condition, can make the various electronic units in the circuit of being located at load system exempt from the secondary damage.
In this case, as above-mentioned embodiment, the filament of between the emitter electrode terminal 3a of the outside lead terminal 4 of emitter and semiconductor chip 3, making 6 of refractory metals such as Au, Al or Cu, and between the collector electrode terminal 3b of the outside lead terminal 5 of collector electrode and semiconductor chip 3 with welding wire 7 ' carry out wire bond.But alternatively, the filament made from refractory metals such as Au, Al or Cu between the collector electrode terminal 3b of the outside lead terminal 5 of collector electrode and semiconductor chip 36 is carried out wire bond, and between the emitter electrode end 3a of the outside lead terminal 4 of emitter and semiconductor chip 3 with welding wire 7 ' carry out wire bond also to be fine.
In addition, as shown in Figure 9, in a second embodiment, between the collector electrode terminal 3b of collector electrode outside lead terminal 5 and semiconductor chip 3, and between the emitter electrode terminal 3a of the outside lead terminal 4 of emitter and semiconductor chip 3, both all use welding wire 7 ' and 7 " it is good to carry out wire bond; even if under this situation; above-mentioned two welding wires 7 ' and 7 ", also will be with the elastic resin 8 of silicones etc. ' and 8 " after smearing, the module made from the thermoset synthetic resin of epoxy resin etc. is they all encapsulation.
Figure 10 has provided the wire bonding method under the situation of this second embodiment.
Promptly, outside lead terminal 2 and two outside lead terminals 4,5 of having the base stage substrate are being made the lead frame 24 of an integral body along the first step in its long axis direction handover path, use earlier with the same method of above-mentioned Fig. 3-Fig. 5 welding wire 7 ' and 7 " the spherical part 7a place of lower end, welding wire 7 ' with 7 " be bonded on the collector electrode terminal 3b and emitter electrode terminal 3a on the semiconductor chip 3.Then, in second step, above-mentioned two welding wires 7 ' and the spherical part 7b on the top of 7 " bending towards outside lead terminal 4 and 5 separately; afterwards;, use the method identical, " above-mentioned two welding wires 7 ' with 7 with above-mentioned Fig. 8 in ensuing the 3rd step be bonded on separately the outside lead terminal 4 and 5.
Since welding wire 7 ' and 7 " be bonded to the operation that collector electrode terminal 3b on the semiconductor chip 3 and emitter electrode terminal 3a get on; and this two welding wires 7 ' with 7 " the spherical part 7b on top be bonded to the operation that outside lead terminal 4 and 5 goes, in time can be overlapping, so use this method, can improve with welding wire 7 ' with 7 " the wire bond speed of carrying out.
Figure 11 and Figure 12 have provided the 3rd embodiment.
The 3rd embodiment is used for the transistorized situation of bigger power-type to the present invention.In other words, thermal diffusivity for the base stage substrate 11 that improves double as substrate external portion lead terminal, it is done more with metal, and on this base stage substrate, load onto the semiconductor chip 13 that has formed the high power transistor circuit element, on the other hand, on aforementioned base substrate 11, load onto emitter outside lead terminal 14 and collector electrode outside lead terminal 15, and make them connect this base stage substrate 11, on aforementioned base substrate 11, also to fixedly mount the pipe cap of making of metallic plate 19, make it the head portion of above-mentioned semiconductor chip 13 and each outside lead terminal 14 and 15 is covered.Moreover, also be coated with the resinous coat 20 that is useful on this semiconductor chip 13 of protection on the above-mentioned semiconductor chip 13.
In the case, each embodiment that di sopra was said is the same, between the emitter electrode terminal 13a of the transistor circuit element of the top of emitter outside lead terminal 14 and above-mentioned semiconductor chip 13, use Au, the filament 16 that refractory metal such as Al or Cu is made is electrically connected by the wire bond method, and between the collector electrode terminal 13b of the transistor circuit element of the top of above-mentioned collector electrode outside lead terminal 15 and semiconductor chip 13, with with Fig. 3-same method shown in Figure 8, when using wire bond method by welding wire 17 ' carry out to be electrically connected, earlier will welding wire 17 ' two ends form spherical part 17a and 17b, then, by two spherical part 17a and 17b are bonded on collector electrode terminal 13b and the outside lead terminal, can reach same purpose.
In addition, even if in this case, also the filament 6 pressure welding collector electrode outside lead terminals 15 that can make with refractory metals such as Au, Al or Cu and the passive electrode electrode terminal 13b of semiconductor chip 13, and with the emitter electrode terminal 13a of welding wire 17 ' pressure welding emitter outside lead terminal 14 and semiconductor chip 13.In addition, can also be between the collector electrode terminal 13b of collector electrode outside lead terminal 15 and semiconductor chip 13, and between the emitter electrode terminal 13a of emitter outside lead terminal 14 and semiconductor chip 13, both all carry out pressure welding with welding wire.
Also have, the present invention is not limited to the given high-power transistor npn npn of above-mentioned first-Di, three embodiment, and it can be used for other various transistors such as MOS transistor npn npn and field-effect transistor, thyristor equally, oppositely by three end thyristors and the electronic unit that is called other band semiconductor chips of three terminal bidirectional thyristor switch element etc.
Self-evident, the present invention be equally applicable to as shown in figure 13 on a semiconductor chip, form a plurality of transistor circuit elements and the transistor array 30 that constitutes, perhaps, as shown in figure 14 on a semiconductor chip, form a plurality of diode electrically circuit components and the diode array 40 that constitutes.
In addition, comprise the welding wire of having put into some amount silver in welding wire of the present invention, this is self-evident.

Claims (7)

1, a kind of semiconductor device, it comprises the semiconductor chip that has had the circuit element of two outlet side electrode terminals at least by having formed, correspond respectively to the outside lead terminal of each the outlet side electrode terminal in the above-mentioned semiconductor chip and the electronic unit that the filament that each outlet side electrode terminal in the foregoing circuit element is electrically connected with separately outside lead terminal is constituted, it is characterized in that: make at least a portion filament in the above-mentioned filament become welding wire and form spherical part at the two ends of this welding wire, again these two spherical parts are bonded on the outlet side electrode terminal and outside lead terminal thereof in the circuit element of above-mentioned semiconductor chip, make this welding wire form Thermal Cutoffs above-mentioned semiconductor chip.
2, semiconductor device as claimed in claim 1 is characterized in that: all filament all is a welding wire.
3, semiconductor device as claimed in claim 1, it is characterized in that: semiconductor chip one side's spherical part among two spherical parts, be bonded on the axis direction of welding wire on the terminal of outlet side, and the spherical part of outside lead terminal one side, with the rectangular approximately direction of the axis of welding wire on be bonded on the outside lead terminal.
4, semiconductor device as claimed in claim 1 is characterized in that: the circuit element in the semiconductor chip is the transistor circuit element.
5, semiconductor device as claimed in claim 1 is characterized in that: the circuit element in the semiconductor chip is the High-power Semiconductor Triode circuit element.
6, semiconductor device as claimed in claim 1 is characterized in that: the transistor array of the circuit element in the semiconductor chip for being made of a plurality of transistor circuit elements.
7, semiconductor device as claimed in claim 1 is characterized in that: the crystal diode array of the circuit element in the semiconductor chip for being made of a plurality of crystal diode circuit elements.
CN94115352A 1993-09-21 1994-09-20 Electronic units with semiconductor slugs Expired - Fee Related CN1042680C (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP23462993 1993-09-21
JP234629/93 1993-09-21
JP04589994A JP3459291B2 (en) 1993-09-21 1994-03-16 Electronic components with semiconductor chips
JP45899/94 1994-03-16

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CN1109218A true CN1109218A (en) 1995-09-27
CN1042680C CN1042680C (en) 1999-03-24

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JPH07142672A (en) 1995-06-02
DE4433503A1 (en) 1995-03-23
DE4433503C2 (en) 2001-04-26
CN1042680C (en) 1999-03-24

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