KR950030209A - Semiconductor device using buffer chip and manufacturing method thereof - Google Patents

Semiconductor device using buffer chip and manufacturing method thereof Download PDF

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KR950030209A
KR950030209A KR1019940009638A KR19940009638A KR950030209A KR 950030209 A KR950030209 A KR 950030209A KR 1019940009638 A KR1019940009638 A KR 1019940009638A KR 19940009638 A KR19940009638 A KR 19940009638A KR 950030209 A KR950030209 A KR 950030209A
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bonding
chip
buffer chip
semiconductor
buffer
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KR1019940009638A
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KR0120186B1 (en
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김동국
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김광호
삼성전자 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)

Abstract

반도체 장치의 제조에 있어서, 기존의 반도체 장치의 고집적화에 따른 와이어 본딩공정시 와이어가 길어짐으로 인한 제반 문제점을 해결하기 위하여 리드 프레임상에 알루미늄 본딩패드만이 적어도 일열이상 칩 방향 가장자리 부위에 배열되어 있는 버퍼칩이 접착되어 있고, 상기 버퍼칩상에 알루미늄 본딩패드 영역을 침범하지 않을 정도의 단면적을 갖는 반도체 칩이 접착되어 있으며, 상기 반도체 칩의 본딩패드에 볼 본딩 접점을 형성하여 와이어가 일정한 루프(loop)를 유지한 채 상기 버퍼칩의 본딩패드에서 1단계로 웨지 본딩한 후 다시 동일한 버퍼칩 본딩패드에서 웨지본딩된 와이어를 간섭하지 않는 영역에서 볼 본딩하여 전기적으로 1:1 대응되는 내부 리드에 2단계로 웨지본딩하여 전체적인 와이어 본딩의 한 싸이클이 종료하거나, 웨이브 와이어 본딩에 의해 상기 버퍼칩의 2열 이상의 알루미늄 본딩 패드에 지그재그로 와이어 본딩하도록 하였다. 따라서 이와같은 버퍼칩을 이용한 반도체 장치 및 그 제조방법은 대용량의 반도체 패키지 제조에 유용하게 적용된다.In the manufacture of a semiconductor device, in order to solve all the problems caused by the length of the wire during the wire bonding process due to the high integration of the conventional semiconductor device, only aluminum bonding pads are arranged on the edge of the chip direction at least one row on the lead frame. A buffer chip is bonded, and a semiconductor chip having a cross-sectional area that does not invade an aluminum bonding pad region is bonded to the buffer chip, and a ball bonding contact is formed on a bonding pad of the semiconductor chip so that a wire is uniformly looped. And wedge bonding in one step on the bonding pad of the buffer chip, and then ball-bonding in an area that does not interfere with the wedge-bonded wire in the same buffer chip bonding pad, thereby providing an electrical 1: 1 to the internal lead. Wedgebonding in steps to terminate one cycle of overall wire bonding, or By air bonding was wire bonded to two or more columns in a zigzag pattern in the aluminum bonding pads of said buffer chip. Therefore, such a semiconductor device and a manufacturing method using the buffer chip is usefully applied to the manufacture of a large-capacity semiconductor package.

Description

버퍼칩을 이용한 반도체 장치 및 그 제조방법Semiconductor device using buffer chip and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제5도는 이 발명에 따른 버퍼칩을 이용한 반도체 장치의 또 다른 실시예를 나타내는 요부사시도, 제6도는 제3도의 EMC 성형후의 요부 단면도, 제7도는 제4도의 EMC 성형후의 요부 단면도, 제8도는 제5도의 EMC 성형후의 요부 단면도이다.5 is a main portion perspective view showing another embodiment of a semiconductor device using a buffer chip according to the present invention, FIG. 6 is a sectional view of the main part after EMC molding in FIG. 3, FIG. 7 is a sectional view of the main part after EMC molding in FIG. It is sectional drawing of the principal part after EMC molding of FIG.

Claims (10)

리드 프레임의 다이패드상에 버퍼칩이 탑재되어 있고, 상기 버퍼칩상에 형성된 본딩패드만을 침범하지 않는 범위내에서 버퍼칩의 상부에 적어도 하나 이상의 반도체 칩이 접착되어 있으며, 상기 반도체 칩상에 형성된 본딩패드들과 버퍼칩상에 형성된 본딩패드들과 내부리드들이 웨이브 본딩된 후, 상기 반도체 칩 및 버퍼칩을 외부환경으로부터 보호하기 위하여 에폭시 몰드 컴파운드로 몰딩되어, 상기 내부 리드들에서 연장된 외부리드를 절단하거나 절곡하여 형성된 반도체 장치.A buffer chip is mounted on the die pad of the lead frame, and at least one semiconductor chip is adhered to the upper portion of the buffer chip within the range not invading only the bonding pad formed on the buffer chip, and the bonding pad formed on the semiconductor chip. Bond pads and inner leads formed on the chip and the buffer chip are wave bonded, and then molded into an epoxy mold compound to protect the semiconductor chip and the buffer chip from the external environment, thereby cutting the outer lead extending from the inner leads. A semiconductor device formed by bending. 제1항에 있어서 상기 버퍼칩상에 형성된 본딩패드는 버퍼 칩상부에 탑재된 반도체 칩의 본딩패드보다 같거나 크게 형성됨을 특징으로 하는 반도체 장치.The semiconductor device of claim 1, wherein a bonding pad formed on the buffer chip is formed to be larger than or larger than a bonding pad of a semiconductor chip mounted on the buffer chip. 제1항에 있어서, 상기 버퍼칩은 리드 프레임 패드보다 크지 않으며 200∼650㎛의 두께를 갖는 반도체 장치.The semiconductor device of claim 1, wherein the buffer chip is not larger than a lead frame pad and has a thickness of 200 to 650 μm. 제1항에 있어서, 상기 반도체 칩상에 형성된 본딩패드들과 버퍼칩상에 형성된 본딩패들과 내부 리드들이 웨지본딩됨을 특징으로 하는 반도체 장치.The semiconductor device of claim 1, wherein the bonding pads formed on the semiconductor chip, the bonding paddles formed on the buffer chip, and the inner leads are wedge bonded. 리드 프레임 패드상에 액상의 접착제를 사용하여 버퍼칩을 접착시키고, 상기 버퍼칩상에 액상의 접착제를 사용하여 반도체 칩을 접착시킨 후, 상기 액상의 접착제를 경화시키는 공정과; 상기 버퍼칩의 본딩패드들과 상기 반도체 칩의 본딩패드들과 내부리드들을 웨이브 본딩 또는 웨지 본딩방법에 의해 서로 전기적으로 접속시키는 와이어 본딩공정과; 상기 결과적 구조에 리트 프레임의 상부와 하부를 외부 환경으로부터 보호하기 위하여 에폭시 몰드 컴파운드로 몰딩하는 몰딩고정과; 상기 내부 리드들에서 연장된 외부리드를 절단하거나 절곡하는 트리밍/포밍공정을 각각 구비하는 반도체 장치의 제조방법.Adhering a buffer chip using a liquid adhesive on a lead frame pad, adhering a semiconductor chip using a liquid adhesive on the buffer chip, and then curing the liquid adhesive; A wire bonding step of electrically connecting the bonding pads of the buffer chip, the bonding pads of the semiconductor chip, and the inner leads to each other by a wave bonding or wedge bonding method; Molding fixing molded to the resulting structure with an epoxy mold compound to protect the upper and lower portions of the lit frame from the external environment; And a trimming / forming process for cutting or bending the outer lead extending from the inner leads. 제5항에 있어서, 상기 접착체는 액상의 전도성은 에폭시를 사용함을 특징으로 하는 반도체 장치의 제조방법.The method of manufacturing a semiconductor device according to claim 5, wherein the adhesive has a liquid conductivity of epoxy. 제5항에 있어서, 상기 접착체는 액상의 비전도성은 에폭시를 사용함을 특징으로 하는 반도체 장치의 제조방법.The method of manufacturing a semiconductor device according to claim 5, wherein the adhesive uses a liquid nonconductive epoxy. 리드 프레임의 다이패드상에 버퍼칩이 탑재되어 있고, 상기 버퍼칩상에 2열로 형성된 본딩패드들을 침범하지 않는 범위내에서 버퍼칩의 상부에 반도체 칩이 접착되어 있으며, 상기 반도체 칩상에 형성된 본딩패드들과 버퍼칩상에 2열로 형성된 본딩패드들과 내부리드들이 지그재그로 웨이브 본딩된 후, 상기 2개의 칩을 외부환경으로부터 보호하기 위하여 에폭시 몰드 컴파운드로 몰딩되어, 상기 내부 리드들에서 연장된 외부 리드를 절단하거나 절곡하여 형성한 반도체 장치.Buffer chips are mounted on the die pad of the lead frame, and semiconductor chips are bonded to the top of the buffer chip within the range of not invading the bonding pads formed in two rows on the buffer chip, and bonding pads formed on the semiconductor chips. After two rows of bonding pads and inner leads are zigzag-bonded on the buffer chip, the two chips are molded with an epoxy mold compound to protect the two chips from the external environment, thereby cutting the outer leads extending from the inner leads. A semiconductor device formed by bending or bending. 제7항에 있어서, 상기 버퍼칩은 리드 프레임 패드보다 크지 않으며 200∼650㎛의 두께를 갖는 반도체장치.8. The semiconductor device of claim 7, wherein the buffer chip is not larger than a lead frame pad and has a thickness of 200 to 650 mu m. 리드 프레임 패드상에 접착을 사용하여 2열로 배열 형성된 본딩패드들을 갖는 버퍼칩을 접착시키고, 상기 버퍼칩상에 접착제를 사용하여 1열로 배열 형성된 본딩패드들을 갖는 반도체 칩을 접착시킨 후, 상기 접착제를 동시에 경화시키는 공정과; 상기 버퍼칩의 본딩패드들과 상기 반도체 칩의 본딩패드들과 내부 리드들을 지그재그 웨이브 본딩 또는 스티치 본딩방법에 의해 서로 전기적으로 접속시키는 와이어 본딩공정과; 상기 결과적 구조에 리드 프레임의 상부와 하부를 외부 환경으로부터 보호하기 위하여 에폭시 몰드 컴파운드로 몰딩하는 몰딩공정; 상기 내부 리드들에서 연장된 외부 리드를 절단하거나 절곡하는 트리밍/포밍공정을 각각 구비하는 반도체 장치의 제조방법.Bonding the buffer chips having the bonding pads arranged in two rows using the adhesive on the lead frame pads, bonding the semiconductor chips having the bonding pads arranged in one row using the adhesive on the buffer chip, and then simultaneously applying the adhesive Curing step; A wire bonding step of electrically connecting the bonding pads of the buffer chip, the bonding pads of the semiconductor chip, and internal leads to each other by a zigzag wave bonding or stitch bonding method; Molding the upper and lower portions of the lead frame in the resulting structure with an epoxy mold compound to protect it from the external environment; And a trimming / forming process of cutting or bending the outer lead extending from the inner leads. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임※ Note: The disclosure is based on the initial application.
KR1019940009638A 1994-04-29 1994-04-29 Buffer chip KR0120186B1 (en)

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KR0120186B1 KR0120186B1 (en) 1997-10-17

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