JPH0448758A - Resin-sealed semiconductor device - Google Patents
Resin-sealed semiconductor deviceInfo
- Publication number
- JPH0448758A JPH0448758A JP15890090A JP15890090A JPH0448758A JP H0448758 A JPH0448758 A JP H0448758A JP 15890090 A JP15890090 A JP 15890090A JP 15890090 A JP15890090 A JP 15890090A JP H0448758 A JPH0448758 A JP H0448758A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- dam
- hardness
- semiconductor element
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 94
- 229920005989 resin Polymers 0.000 claims abstract description 80
- 239000011347 resin Substances 0.000 claims abstract description 80
- 229920002050 silicone resin Polymers 0.000 claims abstract description 23
- 238000007789 sealing Methods 0.000 claims abstract description 22
- 238000007259 addition reaction Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 239000003822 epoxy resin Substances 0.000 abstract description 3
- 229920000647 polyepoxide Polymers 0.000 abstract description 3
- 235000019589 hardness Nutrition 0.000 abstract 4
- 238000006482 condensation reaction Methods 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 238000007542 hardness measurement Methods 0.000 abstract 1
- 238000001723 curing Methods 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000013007 heat curing Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 2
- 229920001342 Bakelite® Polymers 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000004637 bakelite Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】 ［産業上の利用分野コ 本発明は樹脂封止半導体装置に関する。[Detailed description of the invention] [Industrial application fields] The present invention relates to a resin-sealed semiconductor device.
［従来の技術］
従来、回路基板に搭載された半導体素子が樹脂により封
止されてなる樹脂封止半導体装置は種々知られている。[Prior Art] Various resin-sealed semiconductor devices have been known in which a semiconductor element mounted on a circuit board is sealed with resin.
一般に、半導体素子を封止するために使用される樹脂（
封止樹脂）は、半導体素子の隙間を充填するために低粘
度で流動性を有する必要がある。そのため、樹脂封止半
導体装置を製造する際に、封止樹脂が回路基板表面を汚
染することがあった。このような問題点を解決するため
、半導体素子が搭載された回路基板の半導体素子搭載部
の周囲に、撥水性充填剤を含む樹脂からなるダムが形成
され、該ダム内側の半導体素子が封止樹脂により封止さ
れてなる樹脂封止半導体装置（特開昭Ｅ３２−２２９８
６２号公報参照）とか塗布された形状を保持するのに適
した粘度およびチクソトロピック性を有する樹脂からな
るダムが形成され、該ダム内側の半導体素子が封止樹脂
により封止されてなる樹脂封止半導体装置（特開昭８２
−２２９９６２号公報参照）等が提案されている。Generally, resins (
The sealing resin (sealing resin) needs to have low viscosity and fluidity in order to fill the gaps in the semiconductor element. Therefore, when manufacturing a resin-sealed semiconductor device, the sealing resin sometimes contaminates the surface of the circuit board. To solve these problems, a dam made of resin containing a water-repellent filler is formed around the semiconductor element mounting portion of a circuit board on which the semiconductor element is mounted, and the semiconductor element inside the dam is sealed. Resin-sealed semiconductor device sealed with resin (Japanese Patent Application Laid-open No. Sho E32-2298
A dam made of a resin having viscosity and thixotropic properties suitable for maintaining the applied shape (see Publication No. 62) is formed, and the semiconductor element inside the dam is sealed with a sealing resin. Stop semiconductor device (Japanese Patent Application Laid-Open No. 1982)
-229962) etc. have been proposed.
［発明が解決しようとする課題］
しかし、前者の樹脂封止半導体装置は、ダムを形成する
樹脂と封止樹脂との接着性が劣り、耐湿性が劣るという
欠点を有している。一方、後者の樹脂封止半導体装置は
ダムを形成する樹脂と封止樹脂との接着性が優れ、耐湿
性が優れるという特徴を有している。[Problems to be Solved by the Invention] However, the former resin-sealed semiconductor device has the drawbacks of poor adhesion between the resin forming the dam and the sealing resin, and poor moisture resistance. On the other hand, the latter resin-sealed semiconductor device is characterized by excellent adhesion between the resin forming the dam and the sealing resin, and excellent moisture resistance.
しかし、この樹脂封止半導体装置は、半導体素子を外力
から保護するために、封止樹脂の硬度は必然的に大きく
なければならない。これにともなって、封止樹脂の内部
応力が大きくなり、この樹脂封止半導体装置は、加熱ま
たは冷却した場合には、樹脂封止半導体装置の性能が低
下し、半導体素子と導線を接続するボンディングワイヤ
が変形または破断を引き起こす等の欠点があった。However, in this resin-sealed semiconductor device, the hardness of the sealing resin must necessarily be high in order to protect the semiconductor element from external forces. Along with this, the internal stress of the sealing resin increases, and when the resin-sealed semiconductor device is heated or cooled, the performance of the resin-sealed semiconductor device decreases, and the bonding that connects the semiconductor element and the conductor There were disadvantages such as the wire deforming or breaking.
本発明の目的は、上記のような問題のない信頼性に優れ
た樹脂封止半導体装置を提供することにある。An object of the present invention is to provide a resin-sealed semiconductor device that is free from the above-mentioned problems and has excellent reliability.
［課題を解決するための手段およびその作用コ本発明者
らは上記問題点を解決すべく鋭意検討した結果、本発明
に到達した。[Means for Solving the Problems and Their Effects] The present inventors have made extensive studies to solve the above problems, and as a result, have arrived at the present invention.
本発明の目的は、
「半導体素子が搭載された回路基板の半導体素子搭載部
の周囲に、樹脂からなるダムが形成され、該ダム内側の
半導体素子が樹脂により封止されてなる樹脂封止半導体
装置において、該ダムを形成する樹脂が硬度５〜６４（
該硬度はＪＩＳ Ｋ ６３０１に規定されるＡ形硬
さ試験機により測定された値である。）の樹脂であり、
該半導体素子を封止する樹脂が硬度６５〜９５（該硬度
は前記と同しである。）の樹脂であることを特徴とする
樹脂封止半導体装置。」により達成される。The object of the present invention is to provide a resin-sealed semiconductor in which a dam made of resin is formed around a semiconductor element mounting portion of a circuit board on which a semiconductor element is mounted, and the semiconductor element inside the dam is sealed with resin. In the device, the resin forming the dam has a hardness of 5 to 64 (
The hardness is a value measured using a type A hardness tester specified in JIS K 6301. ) resin,
A resin-sealed semiconductor device characterized in that the resin for sealing the semiconductor element is a resin having a hardness of 65 to 95 (the hardness is the same as described above). ” is achieved.
以下、本発明の樹脂封止半導体装置を第１図および第２
図により説明する。第１図は本発明の樹脂封止半導体装
置の断面図であり、第２図は第１図の一部破断斜視図で
ある。Hereinafter, the resin-sealed semiconductor device of the present invention will be explained with reference to FIGS. 1 and 2.
This will be explained using figures. FIG. 1 is a sectional view of a resin-sealed semiconductor device of the present invention, and FIG. 2 is a partially cutaway perspective view of FIG. 1.
本発明の樹脂封止半導体装置は第１図に示すように、半
導体素子ｌが搭載された回路基板２の半導体素子搭載部
の周囲に樹脂からなるダム３が形成され、該ダム内側の
半導体素子１が樹脂４により封止されている。ここで、
半導体素子１を搭載した回路基板２は、第２図に示すよ
うに、回路基板２がガラスエポキシ樹脂、ベークライト
樹脂、フェノール樹脂等の打機樹脂：アルミナ等のセラ
ミックス；銅、アルミニウム等の金属等の材質からなり
、回路基板２の表面には銅、銀−パラジウム等の材質か
らなる導線５が印刷されている。また回路基板２には半
導体素子１が搭載されており、半導体素子１は該素子の
上端部にあるポンディングパッド６と導線５を金、銅、
アルミニウム等の材質からなるボンディングワイヤ７に
より接続されている。As shown in FIG. 1, the resin-sealed semiconductor device of the present invention has a dam 3 made of resin formed around a semiconductor element mounting portion of a circuit board 2 on which a semiconductor element l is mounted, and a semiconductor element inside the dam. 1 is sealed with resin 4. here,
As shown in FIG. 2, the circuit board 2 on which the semiconductor element 1 is mounted is made of a molded resin such as glass epoxy resin, Bakelite resin, or phenol resin; ceramics such as alumina; metals such as copper or aluminum; On the surface of the circuit board 2, conductive wires 5 made of a material such as copper, silver-palladium, etc. are printed. Further, a semiconductor element 1 is mounted on the circuit board 2, and the semiconductor element 1 has a bonding pad 6 at the upper end of the element and a conductive wire 5 made of gold, copper, etc.
They are connected by bonding wires 7 made of a material such as aluminum.
そして、導線５は回路基板２の端部において外部リード
端子８に接続されている。また回路基板２には抵抗、コ
ンデンサーおよびフィル等の電子部品が搭載される場合
もある。このような樹脂封止半導体装置は一般にハイブ
リッドＩＣ七呼ばれているものである。The conducting wire 5 is connected to an external lead terminal 8 at the end of the circuit board 2. The circuit board 2 may also include electronic components such as resistors, capacitors, and fillers. Such a resin-sealed semiconductor device is generally called a hybrid IC7.
本発明において、回路基板２の半導体素子搭載部の周囲
にダム３を形成する樹脂の硬度は５〜６４の範囲内であ
る。ここで該硬度はＪＩＳＫ ６３０１に規定される
Ａ形硬さ試験機により測定された値である。これはダム
３を形成する樹脂の硬度が５未満であると樹脂封止半導
体装置の半導体素子１を外力から保護することができず
、また外力を受けた場合に容易にダム３を形成する樹脂
が変形し破損するためである。またダム３を形成する樹
脂の硬度が６４を越えると半導体素子１を封止する樹脂
４の内部応力が大きくなるために、樹脂封止半導体装置
を加熱または冷却した場合に、樹脂４の膨張または収縮
により半導体素子１と導線５を接続するボンディングワ
イヤ７が変形または破断を引き起こし、樹脂封止半導体
装置の性能が低下する。また外力に対してダム３を形成
する樹脂が脆くなり、このため震動、衝撃等により樹脂
封止半導体装置の信頼性が低下するためである。また、
ダム３を形成する樹脂の引裂強さはＪＩＳＫ６３０１に
規定されるＡ型試験片において２．０ｋｇｆ／ｃＩ１１
以上であることが好ましい。これはダム３を形成する樹
脂の引裂強さが２．０ ｋｇｆ／ａｍ以上であると外力
に対して強固であるからである。In the present invention, the hardness of the resin forming the dam 3 around the semiconductor element mounting portion of the circuit board 2 is within the range of 5 to 64. Here, the hardness is a value measured by a type A hardness tester specified in JISK 6301. This is because if the hardness of the resin that forms the dam 3 is less than 5, it will not be possible to protect the semiconductor element 1 of the resin-sealed semiconductor device from external forces, and the resin that forms the dam 3 will easily form the dam 3 when subjected to external force. This is because it becomes deformed and damaged. Furthermore, if the hardness of the resin forming the dam 3 exceeds 64, the internal stress of the resin 4 that seals the semiconductor element 1 will increase. The shrinkage causes deformation or breakage of the bonding wire 7 that connects the semiconductor element 1 and the conductive wire 5, resulting in a decrease in the performance of the resin-sealed semiconductor device. In addition, the resin forming the dam 3 becomes brittle against external forces, which reduces the reliability of the resin-sealed semiconductor device due to vibrations, impacts, and the like. Also,
The tear strength of the resin forming the dam 3 is 2.0 kgf/cI11 in a type A test piece specified in JIS K6301.
It is preferable that it is above. This is because if the tear strength of the resin forming the dam 3 is 2.0 kgf/am or more, it will be strong against external forces.
本発明において、樹脂からなるダム３の内側の半導体素
子１を充填する樹脂４は、半導体素子１を封止する目的
で使用され、該樹脂の硬度は６５〜９５の範囲である。In the present invention, the resin 4 filling the semiconductor element 1 inside the dam 3 made of resin is used for the purpose of sealing the semiconductor element 1, and the hardness of the resin is in the range of 65 to 95.
ここで該硬度は前記同様ＪＩＳ Ｋ ６３０１に規定
されるＡ形硬さ試験機により測定された値である。これ
は樹脂４の硬度が６５未満であると樹脂封止半導体装置
の半導体素子１を外力から保護することができず、また
樹脂４の硬度が９５を越えると樹脂４の内部応力が大き
くなるために樹脂封止半導体装置が加熱または冷却され
た場合に、封止樹脂４の膨張または収縮により、半導体
素子１と導線５を接続するボンディングワイヤ７が変形
または破断を引き起こし、樹脂封止半導体装置の性能が
低下するためである。Here, the hardness is a value measured by a type A hardness tester specified in JIS K 6301 as described above. This is because if the hardness of the resin 4 is less than 65, it will not be possible to protect the semiconductor element 1 of the resin-sealed semiconductor device from external forces, and if the hardness of the resin 4 exceeds 95, the internal stress of the resin 4 will increase. When the resin-sealed semiconductor device is heated or cooled, the expansion or contraction of the sealing resin 4 causes the bonding wires 7 connecting the semiconductor element 1 and the conductive wires 5 to deform or break, causing the resin-sealed semiconductor device to deform or break. This is because performance deteriorates.
本発明においてダム３を形成する樹脂および該ダム内側
で半導体素子１を封止する樹脂４としては、エポキシ樹
脂、シリコーン樹脂等が挙げれるが、これらの中でもシ
リコーン樹脂が好ましく、ダム３を形成する樹脂または
該ダム内側の半導体素子１を封止する樹脂４の少なくと
も一方に使用することが好ましい。本発明で使用するの
に好適なシリコーン樹脂としては付加反応硬化型のシリ
コーン樹脂、縮合反応硬化型のシリコーン樹脂、有機過
酸化物硬化型のシリコーン樹脂のいずれでも良いが、半
導体素子１を樹脂により封止する際、加熱できない場合
には該樹脂は縮合反応硬化型のシリコーン樹脂が好まし
く、また半導体素子の封止作業性が要求される場合には
、該樹脂は付加反応硬化型のシリコーン樹脂が好ましい
。In the present invention, the resin forming the dam 3 and the resin 4 sealing the semiconductor element 1 inside the dam include epoxy resin, silicone resin, etc. Among these, silicone resin is preferable, and the resin forming the dam 3 It is preferable to use it as at least one of the resin and the resin 4 sealing the semiconductor element 1 inside the dam. The silicone resin suitable for use in the present invention may be an addition reaction-curing silicone resin, a condensation reaction-curing silicone resin, or an organic peroxide-curing silicone resin. When sealing, if heating is not possible, the resin is preferably a condensation reaction-curing silicone resin, and if the sealing workability of semiconductor elements is required, the resin is preferably an addition reaction-curing silicone resin. preferable.
［実施例コ
次に本発明を第１図および第２図にて説明する。第１図
は本発明の樹脂封止半導体装置の断面図である。第２図
は第１図の樹脂封止半導体装置の一部破断斜視図である
。実施例中、粘度は２５℃における値である。また樹脂
の硬度は、樹脂を１５０℃で１時間の加熱条件下で硬化
させた後、ＪＩＳ Ｋ ６３０１に規定されるＡ形
硬さ試験機により測定した値である。[Example] Next, the present invention will be explained with reference to FIGS. 1 and 2. FIG. 1 is a sectional view of a resin-sealed semiconductor device of the present invention. 2 is a partially cutaway perspective view of the resin-sealed semiconductor device of FIG. 1. FIG. In the Examples, the viscosity is the value at 25°C. Further, the hardness of the resin is a value measured using a type A hardness tester specified in JIS K 6301 after curing the resin under heating conditions at 150° C. for 1 hour.
実施例１
（１）初めに回路基板２に半導体素子１およびその他の
電子部品を搭載した。Example 1 (1) First, the semiconductor element 1 and other electronic components were mounted on the circuit board 2.
（２）次に半導体素子１を搭載した回路基板２の半導体
素子搭載部の周囲に、粘度が１０００ポイズであり、加
熱硬化後の硬度が４５である付加反応硬化型のシリコー
ン樹脂（Ｉ）を、デイスペンサーを使用して塗布し、ダ
ム３を形成した。塗布され該樹脂はダム形状を持続した
。(2) Next, an addition reaction curing silicone resin (I) having a viscosity of 1000 poise and a hardness of 45 after heat curing is applied around the semiconductor element mounting portion of the circuit board 2 on which the semiconductor element 1 is mounted. , was applied using a dispenser to form a dam 3. When applied, the resin maintained a dam shape.
（３）続いて、ダム３の内側に粘度が２ｏボイズであり
、加熱硬化後の硬度が８５である透明な付加反応硬化型
シリコーン樹脂（ｎ）をデイスペンサーを使用して充填
し、半導体素子１を封止する樹脂３を形成した。該樹脂
は速やかに半導体素子１の間隙を充填できた。また該樹
脂は該ダムにより前記回路基板表面を汚染することがな
かった。(3) Next, the inside of the dam 3 is filled with a transparent addition reaction-curing silicone resin (n) having a viscosity of 2O voids and a hardness of 85 after heat curing using a dispenser, and the semiconductor element is A resin 3 for sealing 1 was formed. The resin was able to quickly fill the gaps in the semiconductor element 1. Further, the resin did not contaminate the surface of the circuit board due to the dam.
（４）その後、１５０℃で１時間加熱してシリコーン樹
脂（Ｉ）およびシリコーン樹脂（ｎ）を硬化させた。こ
のようにして樹脂封止半導体装置を得た。(4) Thereafter, silicone resin (I) and silicone resin (n) were cured by heating at 150° C. for 1 hour. In this way, a resin-sealed semiconductor device was obtained.
同様にして樹脂封止半導体装置５０個を製造し、これら
をヒートンＨ”／り試験（−３０℃で３０分間放置しそ
の後１２０°Ｃで３０分間放置することを１サイクルと
する。）で１００サイクル試験を行なった。試験終了後
、樹脂封止半導体装置の外部リード端子８を使用して半
導体素子１および金製ボンディングワイヤ７の電気導通
試験を実施した。その結果電気導通不良は全く発生して
いなかった。またシリコーン樹脂（Ｉ）およびシリコー
ン樹脂（Ｉｒ）にはクラックは発生していなかった。Fifty resin-sealed semiconductor devices were manufactured in the same manner, and they were tested to obtain 100% by heaton H''/resistance test (one cycle consists of leaving them at -30°C for 30 minutes and then leaving them at 120°C for 30 minutes). A cycle test was conducted. After the test, an electrical continuity test was conducted on the semiconductor element 1 and the gold bonding wire 7 using the external lead terminal 8 of the resin-sealed semiconductor device. As a result, no electrical continuity failure occurred. No cracks were observed in silicone resin (I) and silicone resin (Ir).
比較例１
実施例１において使用した、付加反応硬化型のシリコー
ン樹脂（Ｉ）の替りに、粘度が１５００ポイズであり、
加熱硬化後の硬度が８５である付加反応硬化型のシリコ
ーン樹脂（ＩＩＩ）を用いた以外は同様にして樹脂封止
半導体装置を得た。Comparative Example 1 Instead of the addition reaction curing silicone resin (I) used in Example 1, a viscosity of 1500 poise was used,
A resin-sealed semiconductor device was obtained in the same manner except that an addition reaction-curable silicone resin (III) having a hardness of 85 after heat-curing was used.
このようにして製造した樹脂封止半導体装置５０個を実
施例１同様にしてヒートショック試験を行なった。試験
終了後、樹脂封止半導体装置の外部リード端子８を使用
して半導体素子１および金製ボンディングワイヤ７の電
気導通試験を実施した。その結果５０個の樹脂封止半導
体装置の内８個に電気導通不良が発生した。また電気導
通不良が発生した樹脂封止半導体装置の半導体素子１の
封止部分を透明なシリコーン樹脂（ｎ）を通して光学顕
微鏡で観察したところ、全てに金製ボンディングワイヤ
７とポンディングパッド６の接続部分または金製ボンデ
ィングワイヤ７と銀−パラジウム製導線５の接続部分に
おいて金製ボンディングワイヤ７の切断が認められた。Fifty resin-sealed semiconductor devices manufactured in this way were subjected to a heat shock test in the same manner as in Example 1. After the test, an electrical continuity test was conducted on the semiconductor element 1 and the gold bonding wire 7 using the external lead terminal 8 of the resin-sealed semiconductor device. As a result, electrical continuity failure occurred in 8 out of 50 resin-sealed semiconductor devices. In addition, when the sealed portion of the semiconductor element 1 of the resin-sealed semiconductor device in which electrical conductivity failure occurred was observed with an optical microscope through transparent silicone resin (n), it was found that all connections between the gold bonding wires 7 and the bonding pads 6 were observed. Cutting of the gold bonding wire 7 was observed at the connecting portion between the gold bonding wire 7 and the silver-palladium conducting wire 5.
また５０個の樹脂封止半導体装置の内２個の樹脂封止半
導体装置にはシリコーン樹脂（Ｉ［Ｉ）にクラックが発
生していた。Moreover, cracks had occurred in the silicone resin (I[I) in two resin-sealed semiconductor devices among the 50 resin-sealed semiconductor devices.
［発明の効果］
本発明の樹脂封止半導体装置は、半導体素子が搭載され
た回路基板の半導体素子搭載部の周囲に、樹脂からなる
ダムが形成され、該ダム内側の半導体素子が封止樹脂に
より封止されてなる樹脂封止半導体装置において、該ダ
ムを形成する樹脂が硬度５〜６４の樹脂であり、半導体
素子を封止する樹脂が硬度６５〜９５の樹脂であるので
、外力に対して安定性に優れ、加熱または冷却されても
信頼性に優れるという特徴を有する。[Effects of the Invention] In the resin-sealed semiconductor device of the present invention, a dam made of resin is formed around the semiconductor element mounting portion of the circuit board on which the semiconductor element is mounted, and the semiconductor element inside the dam is sealed with the encapsulating resin. In the resin-sealed semiconductor device, the resin forming the dam is a resin with a hardness of 5 to 64, and the resin sealing the semiconductor element is a resin with a hardness of 65 to 95, so it is resistant to external forces. It has the characteristics of excellent stability and reliability even when heated or cooled.
第１図は本発明の樹脂封止半導体装置の断面図である。
第２図は第１図の樹脂封止半導体装置の一部破断斜視図
であり、一部回路図面に省略がある。
１・・・半導体素子、２・・・回路基板、３・・・（樹
脂からなる）ダム、４・・・（半導体素子を封止する）
樹脂、５・・・導線、６・・・ポンプイングツ’ｒツド
、７・・・ボンディングワイヤ、８・・・外部リード端
子FIG. 1 is a sectional view of a resin-sealed semiconductor device of the present invention. FIG. 2 is a partially cutaway perspective view of the resin-sealed semiconductor device of FIG. 1, with some circuit diagrams omitted. 1... Semiconductor element, 2... Circuit board, 3... Dam (made of resin), 4... (Seals the semiconductor element)
Resin, 5... Conductor wire, 6... Pumping wire, 7... Bonding wire, 8... External lead terminal
Claims (3)
載部の周囲に、樹脂からなるダムが形成され、該ダム内
側の半導体素子が樹脂により封止されてなる樹脂封止半
導体装置において、該ダムを形成する樹脂が硬度５〜６
４（該硬度はＪＩＳＫ６３０１に規定されるＡ 形硬さ試験機により測定された値である。）の樹脂であ
り、該半導体素子を封止する樹脂が硬度６５〜９５（該
硬度は前記と同じである。）の樹脂であることを特徴と
する樹脂封止半導体装置。(1) A resin-sealed semiconductor device in which a dam made of resin is formed around the semiconductor element mounting portion of a circuit board on which the semiconductor element is mounted, and the semiconductor element inside the dam is sealed with the resin. The resin that forms the dam has a hardness of 5 to 6.
The resin has a hardness of 65 to 95 (the hardness is the value measured by a type A hardness tester specified in JIS K6301), and the resin that seals the semiconductor element has a hardness of 65 to 95 (the hardness is the same as above). A resin-sealed semiconductor device characterized by being made of a resin.
ン樹脂である特許請求の範囲第１項記載の樹脂封止半導
体装置。(2) The resin-sealed semiconductor device according to claim 1, wherein the resin forming the dam is an addition reaction curing silicone resin.
リコーン樹脂である特許請求の範囲第１項記載の樹脂封
止半導体装置。(3) The resin-sealed semiconductor device according to claim 1, wherein the resin for sealing the semiconductor element is an addition reaction-curable silicone resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15890090A JP2819426B2 (en) | 1990-06-14 | 1990-06-14 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15890090A JP2819426B2 (en) | 1990-06-14 | 1990-06-14 | Resin-sealed semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0448758A true JPH0448758A (en) | 1992-02-18 |
| JP2819426B2 JP2819426B2 (en) | 1998-10-30 |
Family
ID=15681821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15890090A Expired - Lifetime JP2819426B2 (en) | 1990-06-14 | 1990-06-14 | Resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2819426B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0670595A1 (en) * | 1994-02-08 | 1995-09-06 | Dow Corning Toray Silicone Company, Limited | Resin-sealed semiconductor device |
| US6459144B1 (en) * | 2001-03-02 | 2002-10-01 | Siliconware Precision Industries Co., Ltd. | Flip chip semiconductor package |
| TWI400778B (en) * | 2006-09-13 | 2013-07-01 | Shinetsu Chemical Co | Method for sealing microcomponent |
-
1990
- 1990-06-14 JP JP15890090A patent/JP2819426B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0670595A1 (en) * | 1994-02-08 | 1995-09-06 | Dow Corning Toray Silicone Company, Limited | Resin-sealed semiconductor device |
| US6459144B1 (en) * | 2001-03-02 | 2002-10-01 | Siliconware Precision Industries Co., Ltd. | Flip chip semiconductor package |
| TWI400778B (en) * | 2006-09-13 | 2013-07-01 | Shinetsu Chemical Co | Method for sealing microcomponent |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2819426B2 (en) | 1998-10-30 |
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