JP3708490B2 - Optical semiconductor device and manufacturing method thereof - Google Patents

Optical semiconductor device and manufacturing method thereof Download PDF

Info

Publication number
JP3708490B2
JP3708490B2 JP2002050771A JP2002050771A JP3708490B2 JP 3708490 B2 JP3708490 B2 JP 3708490B2 JP 2002050771 A JP2002050771 A JP 2002050771A JP 2002050771 A JP2002050771 A JP 2002050771A JP 3708490 B2 JP3708490 B2 JP 3708490B2
Authority
JP
Japan
Prior art keywords
lead frame
space
light emitting
emitting element
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002050771A
Other languages
Japanese (ja)
Other versions
JP2003163380A (en
Inventor
正樹 安達
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2002050771A priority Critical patent/JP3708490B2/en
Publication of JP2003163380A publication Critical patent/JP2003163380A/en
Application granted granted Critical
Publication of JP3708490B2 publication Critical patent/JP3708490B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Led Device Packages (AREA)

Description

【０００１】
【発明の属する技術分野】
この発明はリードフレームに設けられた発光素子を樹脂によってパッケージする光半導体装置及びその製造方法に関する。
【０００２】
【従来の技術】
光半導体装置は、ＬＥＤなどの発光素子を樹脂によってパッケージして形成される。最近では表面実装用の光半導体装置の需要が高まり、温度２４０℃で１０秒間の熱的衝撃を受けるはんだリフローや温度２６０度で１０秒間の熱的衝撃を受けるはんだフローに対応したパッケージが開発されつつある。
【０００３】
パッケージは、エポキシ樹脂を主成分とする熱硬化性樹脂をキャスティングもしくはトランスファーモールドすることによって形成される。光半導体装置を製造する一例としては、たとえばリードフレーム上に発光素子を搭載し、ワイヤボンディングによってリードフレームと電気的に接続した後、透明エポキシ樹脂をキャスティングすることで形成される。
【０００４】
また、他の構造のパッケージとしては、ガラスエポキシ基板に発光素子を搭載した後、この発光素子を透明エポキシ樹脂で封止した構造が知られている。
【０００５】
【発明が解決しようとする課題】
しかしながら、いずれの構造においても、はんだリフローやはんだフロー時に熱的衝撃が加わると、リードフレームと透明エポキシ樹脂或いは基板と透明エポキシ樹脂との界面に剥離が生じる。
【０００６】
それによって、発光素子とリードフレーム或いは基板との電気的接続が不良となり、発光素子が点灯しない、不点灯不良が発生する。また、パッケージが熱的衝撃を受けることで、エポキシ樹脂にリードフレーム、基板或いは発光素子のエッジ部を始点とするクラックが発生するということがある。
【０００７】
この発明は、リードフレームに発光素子をマウントし、この発光素子を樹脂で覆うようにした場合に、熱的衝撃を受けても、点灯不良が発生したり、樹脂にクラックが生じることがない光半導体装置及びその製造方法を提供することにある。
【０００８】
【課題を解決するための手段】
上記した課題を解決するため、本発明は、リードフレームと、このリードフレームの一部を露出させる空間部を形成した熱可塑性樹脂からなるベース部材と、上記リードフレームの上記空間部内にマウントされ上記リードフレームと電気的に接続された発光素子と、熱硬化性樹脂からなり、上記空間部に充填され上記発光素子から出射される光を透過する充填材と、この充填材に対してほぼ同じ線膨張係数かつ弾性率の低い樹脂からなり、上記充填材が上記空間部に充填される前にこの空間部に露出した発光素子、リードフレーム及びベース部材に設けられた被覆材と、を具備した光半導体装置を提供する。
【０００９】
このとき、上記被覆材はポリアミド樹脂であって、上記ベース部材はポリフタルアミド、ポリフェニレンサルファイド、液晶ポリマー、シンジオタクチックポリスチレンのうちの少なくとも１つであることが好ましい。
【００１０】
また、上記ポリアミド樹脂は、線膨張係数が８．０×１０−５[１／℃]以下で、曲げ弾性率が１６００ＭＰａ以下であることが好ましい。
【００１１】
また、本発明は、リードフレームに、このリードフレームの一部が露出する空間部を形成するよう熱可塑性樹脂をモールドする工程と、上記リードフレームの上記空間部内に露出した部分に発光素子をマウントする工程と、この発光素子と上記リードフレームとを電気的に接続する工程と、上記空間部に上記発光素子から出射される光を透過する熱硬化性樹脂を充填する工程と、上記空間部に上記熱硬化性樹脂を充填する前に、この空間部に露出した発光素子、リードフレーム及びベース部材をポリアミドによって被覆する工程とを具備した光半導体装置の製造方法を提供する。
【００１２】
【発明の実施の形態】
以下、この発明の一実施の形態を図面を参照して説明する。
【００１３】
図１はこの発明の光半導体装置１を示す断面図で、図２はこの光半導体装置１の製造工程を示す。
【００１４】
上記光半導体装置１は金属製、たとえば銅製で、表面にはＮｉ、Ｐｄ及びＡｕが所定の厚さで順次メッキされた、リードフレーム２を備えている。このリードフレーム２には、ポリフタルアミド、ポリフェニレンサルファイド、液晶ポリマー、シンジオタクチックポリスチレンなどの熱可塑性樹脂からなるベース部材３がモールドされる。この実施の形態ではポリフタルアミドを用いて金型温度１３０℃、樹脂溶融粘度３３０Ｐａ・ｓ、保圧１２０ＭＰａの成形条件で成形した。上記ポリフタルアミドには重量比５％以上の酸化チタンを添加した。
【００１５】
上記ベース部材３は、図２（ａ）に示すようにリードフレーム２の下面と上面とにわたってモールドされ、上面にはリードフレーム２の一部を露出させる空間部４が形成される。この空間部４の内周面は、上端にゆくにつれて外方に向かって傾斜したテーパ状になっている。
【００１６】
リードフレーム２にベース部材３をモールドした後、図２（ｂ）に示すように、リードフレーム２の空間部４内に露出した部分には銀フレークを含んだマウントペースト６を塗布し、このマウントペースト６に発光素子５をマウントする。
【００１７】
マウント後、リードフレーム２と、このリードフレーム２にマウントされた発光素子５を、図２（ｃ）に示すようにワイヤボンディングし、ワイヤ７によって電気的に接続する。
【００１８】
ついで、図２（ｄ）に示すように、上記空間部４に露出した発光素子５、リードフレーム２及び空間部４の内周面はポリアミド樹脂からなる被覆材８によって被覆する。この被覆材８は１０〜３０μｍの厚さで設けられる。
【００１９】
空間部４の内面を被覆材８で被覆したならば、図２（ｅ）に示すように、上記空間部４に１液性の透明エポキシ樹脂からなる充填材９を充填する。エポキシ樹脂は高温度条件下で数時間放置して硬化させる必要がある。充填後、一次硬化として９０℃の雰囲気中で２時間以上放置して硬化させた後、硬化を促進させるために二次硬化として１３５℃の温度で４時間放置する。
【００２０】
上記被覆材８としては、上記空間部４に充填される充填材９よりも弾性率の低いポリアミド樹脂、つまり柔軟性の高い樹脂を用いるようにした。その結果、光半導体装置１を表面実装する場合に、はんだリフローやはんだフロ−によって熱的衝撃を受けても、上記被覆材８がその衝撃を吸収緩和する作用を呈する。
【００２１】
そのため、充填材９が空間部４の内面や発光素子５或いはリードフレーム２から剥離するのが防止されるから、発光素子５とリードフレーム２との電気的接続状態が損なわれて発光素子５が不点灯が生じたり、リードフレーム２や発光素子５のエッジを始点として充填材９にクラックが発生するのを防止することができる。
【００２２】
下記［表１］は、被覆材８として物性の異なる６種類のポリアミド樹脂を用いた場合に、発光素子５が不点灯になるか否かと、空間部４に充填した充填材９としてのエポキシ樹脂にクラックが発生するか否かを、各種類ごとに２５個のサンプルを用意して確認したものである。
【００２３】
ポリアミド樹脂は物性の異なるＡ〜Ｆの６種類で、これらのポリアミド樹脂はそれぞれ線膨張係数と、曲げ弾性率が異なる。各光半導体装置１は、はんだフロー処理を行なうことで熱的衝撃を与えた。１５０℃で３０秒間放置する前処理を行なった後、２６０℃に加熱したＳｎ−Ｐｂのはんだに浸漬してはんだフロー処理を行なうようにした。そして、はんだフロー処理後にリードフレーム２を介して発光素子５に所定の電圧と電流を加え、発光素子５が点灯するか否かと、充填材９にクラックが発生しているか否かを確認した。
【００２４】
【表１】

Figure 0003708490
【００２５】
この［表１］から明らかなように、不点灯については、Ａ〜Ｆの物性のポリアミド樹脂のうち、線膨張係数が１．０×１０−４[１／℃]と、１．５×１０−４[１／℃]で、曲げ弾性率が６８０ＭＰａのＡとＢの２種類のポリアミド樹脂を用いた２５個のサンプル中、２５個が不点灯になった。
【００２６】
クラックについては、線膨張係数が８．０×１０−５[１／℃]で、曲げ弾性係数が２５００ＭＰａの物性Ｅのポリアミド樹脂を用いた場合に２５個のサンプル中、１０個に発生し、また線膨張係数が５．５×１０−５[１／℃]で、曲げ弾性率が２６００ＭＰａの物性Ｆのポリアミド樹脂を用いた場合に２５個のサンプル中、２０個にクラックが発生した。
【００２７】
以上のことから、発光素子５が不点灯とならず、しかも充填材９にクラックが発生しないためのポリアミド樹脂の物性としては、線膨張係数が８．０×１０−５[１／℃]以下で、曲げ弾性率が１６００ＭＰａ以下であればよいことになる。これら線膨張係数と、曲げ弾性率との値は、当然、Ｔｇ点までの範囲である。
【００２８】
つまり、線膨張係数が８．０×１０−５[１／℃]よりも大きくなる物性Ａ、Ｂのポリアミド樹脂では、充填材９として用いられるエポキシ樹脂の線膨張係数６．０×１０−５[１／℃]との線膨張係数差が大きくなることで、ワイヤ７の断線やマウントペースト６の剥離による不点灯、さらにはクラックの発生を招くことになる。
【００２９】
また、曲げ弾性率が充填材９として用いられるエポキシ樹脂とほぼ同等の物性Ｅ，Ｆのポリアミド樹脂を用いた場合には、熱応力を緩和することができないため、クラックの発生を招くことになる。
【００３０】
したがって、以上のことから、被覆材８としては、充填材９に用いられるエポキシ樹脂と線膨張係数がほぼ同等で、曲げ弾性率の低いポリアミド樹脂を用いることで、不点灯やクラックの発生を防止することができることになる。
【００３１】
【発明の効果】
以上のようにこの発明によれば、衝撃が加わっても、リードフレームと発光素子との電気的接続状態が不良となって発光素子が不点灯となったり、発光素子を被覆する樹脂にクラックが発生するのを防止することを可能とする。
【図面の簡単な説明】
【図１】本発明の一実施の形態に係る光半導体装置を示す断面図。
【図２】本発明の光半導体装置の製造工程を順次示す説明図。
【符号の説明】
２…リードフレーム、３…ベース部材、４…空間部、５…発光素子、
６…マウントペースト、７…ワイヤ、８…被覆材、９…充填材[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an optical semiconductor device in which a light emitting element provided on a lead frame is packaged with a resin, and a method for manufacturing the same.
[0002]
[Prior art]
The optical semiconductor device is formed by packaging a light emitting element such as an LED with a resin. Recently, demand for optical semiconductor devices for surface mounting has increased, and packages have been developed that support solder reflow that receives a thermal shock for 10 seconds at a temperature of 240 ° C and solder flow that receives a thermal shock for 10 seconds at a temperature of 260 ° C. It's getting on.
[0003]
The package is formed by casting or transfer molding a thermosetting resin mainly composed of an epoxy resin. As an example of manufacturing an optical semiconductor device, for example, a light emitting element is mounted on a lead frame, electrically connected to the lead frame by wire bonding, and then formed by casting a transparent epoxy resin.
[0004]
Further, as a package having another structure, a structure in which a light emitting element is mounted on a glass epoxy substrate and then the light emitting element is sealed with a transparent epoxy resin is known.
[0005]
[Problems to be solved by the invention]
However, in any structure, if a thermal shock is applied during solder reflow or solder flow, peeling occurs at the interface between the lead frame and the transparent epoxy resin or between the substrate and the transparent epoxy resin.
[0006]
As a result, the electrical connection between the light-emitting element and the lead frame or the substrate becomes poor, and the light-emitting element does not light up and a non-lighting failure occurs. Further, when the package is subjected to thermal shock, a crack starting from the edge portion of the lead frame, the substrate, or the light emitting element may occur in the epoxy resin.
[0007]
In the present invention, when a light-emitting element is mounted on a lead frame and the light-emitting element is covered with a resin, light that does not cause a lighting failure or crack in the resin even when subjected to a thermal shock. A semiconductor device and a manufacturing method thereof are provided.
[0008]
[Means for Solving the Problems]
In order to solve the above-described problems, the present invention provides a lead frame, a base member made of a thermoplastic resin in which a space part for exposing a part of the lead frame is formed, and mounted in the space part of the lead frame. A light emitting element electrically connected to the lead frame, a filler made of a thermosetting resin, filled with the space and transmitting light emitted from the light emitting element, and substantially the same line with respect to the filler A light comprising a resin having a low expansion coefficient and a low elastic modulus, and a light emitting element exposed to the space before the filler is filled into the space, a lead frame, and a covering material provided on the base member. A semiconductor device is provided.
[0009]
At this time, the covering material is preferably a polyamide resin, and the base member is preferably at least one of polyphthalamide, polyphenylene sulfide, liquid crystal polymer, and syndiotactic polystyrene.
[0010]
The polyamide resin preferably has a linear expansion coefficient of 8.0 × 10 −5 [1 / ° C.] or less and a flexural modulus of 1600 MPa or less.
[0011]
The present invention also includes a step of molding a thermoplastic resin on the lead frame so as to form a space where a part of the lead frame is exposed, and mounting a light emitting element on the portion of the lead frame exposed in the space. A step of electrically connecting the light emitting element and the lead frame, a step of filling the space with a thermosetting resin that transmits light emitted from the light emitting element, and a step of filling the space Provided is a method of manufacturing an optical semiconductor device comprising a step of coating a light emitting element, a lead frame, and a base member exposed in the space portion with polyamide before filling with the thermosetting resin.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
An embodiment of the present invention will be described below with reference to the drawings.
[0013]
FIG. 1 is a sectional view showing an optical semiconductor device 1 of the present invention, and FIG. 2 shows a manufacturing process of the optical semiconductor device 1.
[0014]
The optical semiconductor device 1 is made of metal, for example, copper, and has a lead frame 2 on the surface of which Ni, Pd, and Au are sequentially plated with a predetermined thickness. A base member 3 made of a thermoplastic resin such as polyphthalamide, polyphenylene sulfide, liquid crystal polymer, or syndiotactic polystyrene is molded on the lead frame 2. In this embodiment, polyphthalamide was used for molding under molding conditions of a mold temperature of 130 ° C., a resin melt viscosity of 330 Pa · s, and a holding pressure of 120 MPa. Titanium oxide having a weight ratio of 5% or more was added to the polyphthalamide.
[0015]
As shown in FIG. 2A, the base member 3 is molded over the lower surface and the upper surface of the lead frame 2, and a space portion 4 for exposing a part of the lead frame 2 is formed on the upper surface. The inner peripheral surface of the space 4 has a tapered shape that is inclined outward as it goes to the upper end.
[0016]
After the base member 3 is molded on the lead frame 2, as shown in FIG. 2 (b), a mount paste 6 containing silver flakes is applied to a portion exposed in the space 4 of the lead frame 2, and this mount The light emitting element 5 is mounted on the paste 6.
[0017]
After the mounting, the lead frame 2 and the light emitting element 5 mounted on the lead frame 2 are wire-bonded as shown in FIG.
[0018]
Next, as shown in FIG. 2 (d), the light emitting element 5, the lead frame 2 and the inner peripheral surface of the space 4 exposed in the space 4 are covered with a covering material 8 made of polyamide resin. The covering material 8 is provided with a thickness of 10 to 30 μm.
[0019]
When the inner surface of the space 4 is covered with the covering material 8, as shown in FIG. 2 (e), the space 4 is filled with a filler 9 made of a one-component transparent epoxy resin. Epoxy resins need to be cured by standing for several hours under high temperature conditions. After filling, the film is allowed to stand for 2 hours or more in a 90 ° C. atmosphere as a primary curing, and then allowed to stand at a temperature of 135 ° C. for 4 hours as a secondary curing in order to accelerate the curing.
[0020]
As the covering material 8, a polyamide resin having a lower elastic modulus than the filler 9 filled in the space 4, that is, a highly flexible resin is used. As a result, when the optical semiconductor device 1 is surface-mounted, even if it receives a thermal shock due to solder reflow or solder flow, the covering material 8 exhibits an action of absorbing and mitigating the shock.
[0021]
Therefore, the filler 9 is prevented from being peeled off from the inner surface of the space 4 or the light emitting element 5 or the lead frame 2, so that the electrical connection state between the light emitting element 5 and the lead frame 2 is impaired and the light emitting element 5 is It is possible to prevent non-lighting or occurrence of cracks in the filler 9 starting from the edge of the lead frame 2 or the light emitting element 5.
[0022]
The following [Table 1] shows whether or not the light-emitting element 5 is not turned on when six kinds of polyamide resins having different physical properties are used as the covering material 8, and the epoxy resin as the filler 9 filled in the space 4 Whether or not cracks occur is prepared by checking 25 samples for each type.
[0023]
There are six types of polyamide resins A to F having different physical properties, and these polyamide resins have different linear expansion coefficients and bending elastic moduli, respectively. Each optical semiconductor device 1 was subjected to a thermal shock by performing a solder flow process. After pre-treatment of leaving at 150 ° C. for 30 seconds, it was immersed in Sn—Pb solder heated to 260 ° C. to perform solder flow treatment. Then, a predetermined voltage and current were applied to the light emitting element 5 through the lead frame 2 after the solder flow treatment, and it was confirmed whether or not the light emitting element 5 was turned on and whether or not the filler 9 was cracked.
[0024]
[Table 1]
Figure 0003708490
[0025]
As is clear from this [Table 1], for non-lighting, among the polyamide resins having physical properties A to F, the linear expansion coefficient is 1.0 × 10 −4 [1 / ° C.] and 1.5 × 10 6. -4 [1 / ° C.], 25 out of 25 samples using two types of polyamide resins, A and B, having a flexural modulus of 680 MPa, turned off.
[0026]
For cracks, a linear expansion coefficient of 8.0 × 10 −5 [1 / ° C.] and a flexural modulus of elasticity of 2500 MPa when using a polyamide resin having a physical property E occurred in 10 out of 25 samples, Further, when a polyamide resin having a physical property F having a linear expansion coefficient of 5.5 × 10 −5 [1 / ° C.] and a flexural modulus of 2600 MPa was used, 20 out of 25 samples were cracked.
[0027]
From the above, as a physical property of the polyamide resin for preventing the light emitting element 5 from being turned off and preventing the filler 9 from cracking, the linear expansion coefficient is 8.0 × 10 −5 [1 / ° C.] or less. Thus, the bending elastic modulus may be 1600 MPa or less. Naturally, the values of the linear expansion coefficient and the flexural modulus are in the range up to the Tg point.
[0028]
That is, in the polyamide resin having the physical properties A and B having a linear expansion coefficient larger than 8.0 × 10 −5 [1 / ° C.], the linear expansion coefficient of the epoxy resin used as the filler 9 is 6.0 × 10 −5. When the difference in linear expansion coefficient from [1 / ° C.] becomes large, disconnection of the wire 7, non-lighting due to peeling of the mount paste 6, and generation of cracks are caused.
[0029]
In addition, when a polyamide resin having physical properties E and F having a flexural modulus substantially equal to that of the epoxy resin used as the filler 9 is used, the thermal stress cannot be relaxed, which causes the generation of cracks. .
[0030]
Therefore, as a covering material 8, the use of a polyamide resin having a linear expansion coefficient substantially equal to that of the epoxy resin used for the filler 9 and a low flexural modulus prevents the occurrence of non-lighting and cracks. Will be able to.
[0031]
【The invention's effect】
As described above, according to the present invention, even if an impact is applied, the electrical connection state between the lead frame and the light emitting element is poor and the light emitting element is not turned on, or the resin covering the light emitting element is cracked. It is possible to prevent the occurrence.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing an optical semiconductor device according to an embodiment of the present invention.
FIGS. 2A and 2B are explanatory views sequentially showing manufacturing steps of the optical semiconductor device of the invention. FIGS.
[Explanation of symbols]
2 ... lead frame, 3 ... base member, 4 ... space, 5 ... light emitting element,
6 ... Mount paste, 7 ... Wire, 8 ... Coating material, 9 ... Filler

Claims (4)

リードフレームと、
このリードフレームの一部を露出させる空間部を形成した熱可塑性樹脂からなるベース部材と、
上記リードフレームの上記空間部内にマウントされ上記リードフレームと電気的に接続された発光素子と、
熱硬化性樹脂からなり、上記空間部に充填され上記発光素子から出射される光を透過する充填材と、
この充填材に対してほぼ同じ線膨張係数かつ弾性率の低いポリアミド樹脂によって形成され、上記充填材が上記空間部に充填される前にこの空間部に露出した上記発光素子、上記リードフレーム及び上記ベース部材を被覆する、線膨張係数が８．０×１０ −５ [ １／℃ ] 以下で曲げ弾性率が１６００ＭＰａ以下である被覆材と、
を具備することを特徴とする光半導体装置。A lead frame,
A base member made of a thermoplastic resin in which a space for exposing a part of the lead frame is formed;
A light emitting element mounted in the space of the lead frame and electrically connected to the lead frame;
A filler made of a thermosetting resin, filled in the space and transmitting light emitted from the light emitting element;
The light emitting element, the lead frame, and the filler, which are formed of a polyamide resin having substantially the same linear expansion coefficient and low elastic modulus with respect to the filler, and are exposed in the space before the filler is filled in the space. A covering material that covers the base member and has a linear expansion coefficient of 8.0 × 10 −5 [ 1 / ° C. ] or less and a flexural modulus of 1600 MPa or less ;
An optical semiconductor device comprising: 上記熱可塑性樹脂はポリフタルアミド、ポリフェニレンサルファイド、液晶ポリマー、シンジオタクチックポリスチレンのうちの少なくとも１つであることを特徴とする請求項１記載の光半導体装置。  2. The optical semiconductor device according to claim 1, wherein the thermoplastic resin is at least one of polyphthalamide, polyphenylene sulfide, liquid crystal polymer, and syndiotactic polystyrene. リードフレームに、このリードフレームの一部が露出する空間部を形成するよう熱可塑性樹脂をモールドする工程と、
上記リードフレームの上記空間部内に露出した部分に発光素子をマウントする工程と、
この発光素子と上記リードフレームとを電気的に接続する工程と、
上記空間部に上記発光素子から出射される光を透過する熱硬化性樹脂を充填する工程と、
上記空間部に上記熱硬化性樹脂を充填する前に、上記空間部に露出した上記発光素子、上記リードフレーム及び上記ベース部材を線膨張係数が８．０×１０−５[１／℃]以下で曲げ弾性率が１６００ＭＰａ以下であるポリアミド樹脂によって被覆する工程と、
を具備することを特徴とする光半導体装置の製造方法。Molding a thermoplastic resin in the lead frame so as to form a space where a part of the lead frame is exposed;
Mounting a light emitting element on a portion exposed in the space of the lead frame;
Electrically connecting the light emitting element and the lead frame;
Filling the space with a thermosetting resin that transmits light emitted from the light emitting element;
Before filling the thermosetting resin in the space portion, the light emitting device exposed in the space portion, the lead frame and the linear expansion coefficient the base member is 8.0 × 10 -5 [1 / ℃ ] or less And a step of coating with a polyamide resin having a flexural modulus of 1600 MPa or less,
An optical semiconductor device manufacturing method comprising: 上記熱可塑性樹脂はポリフタルアミド、ポリフェニレンサルファイド、液晶ポリマー、シンジオタクチックポリスチレンのうちの少なくとも１つで成形することを特徴とする請求項３記載の光半導体装置の製造方法。  4. The method of manufacturing an optical semiconductor device according to claim 3, wherein the thermoplastic resin is formed of at least one of polyphthalamide, polyphenylene sulfide, liquid crystal polymer, and syndiotactic polystyrene.
JP2002050771A 2001-09-12 2002-02-27 Optical semiconductor device and manufacturing method thereof Expired - Fee Related JP3708490B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002050771A JP3708490B2 (en) 2001-09-12 2002-02-27 Optical semiconductor device and manufacturing method thereof

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-276793 2001-09-12
JP2001276793 2001-09-12
JP2002050771A JP3708490B2 (en) 2001-09-12 2002-02-27 Optical semiconductor device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JP2003163380A JP2003163380A (en) 2003-06-06
JP3708490B2 true JP3708490B2 (en) 2005-10-19

Family

ID=26622078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002050771A Expired - Fee Related JP3708490B2 (en) 2001-09-12 2002-02-27 Optical semiconductor device and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JP3708490B2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4263051B2 (en) 2003-07-31 2009-05-13 俊信 横尾 Light emitting diode
JP4359201B2 (en) * 2004-07-26 2009-11-04 シャープ株式会社 Optical semiconductor device, optical connector and electronic device
JP4608294B2 (en) * 2004-11-30 2011-01-12 日亜化学工業株式会社 RESIN MOLDED BODY, SURFACE MOUNTED LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING THEM
US9502624B2 (en) 2006-05-18 2016-11-22 Nichia Corporation Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same
JP5380774B2 (en) 2006-12-28 2014-01-08 日亜化学工業株式会社 Surface mount type side surface light emitting device and manufacturing method thereof
JP5374876B2 (en) * 2008-01-19 2013-12-25 日亜化学工業株式会社 Light emitting device
US20110260192A1 (en) * 2008-10-01 2011-10-27 Chang Hoon Kwak Light-emitting diode package using a liquid crystal polymer
JP5155989B2 (en) * 2009-11-30 2013-03-06 旭化成エレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
EP3200250B1 (en) * 2014-09-26 2020-09-02 Toshiba Hokuto Electronics Corp. Production method for light-emission module
JP7354034B2 (en) * 2020-03-19 2023-10-02 株式会社東芝 optical coupling device

Also Published As

Publication number Publication date
JP2003163380A (en) 2003-06-06

Similar Documents

Publication Publication Date Title
US20190165228A1 (en) Light emitting devices and components having excellent chemical resistance and related methods
US5458716A (en) Methods for manufacturing a thermally enhanced molded cavity package having a parallel lid
JP5918664B2 (en) Manufacturing method of stacked semiconductor device
US20120286405A1 (en) Semiconductor device and method for manufacturing the same
JP3708490B2 (en) Optical semiconductor device and manufacturing method thereof
EP0421005A2 (en) Process of assembling an electronic package
JP2010219420A (en) Semiconductor device
CN102549785B (en) Light emitting device
JP3659635B2 (en) Optical semiconductor device
TW201234644A (en) Power light emitting die package with reflecting lens and the method of making the same
US7432601B2 (en) Semiconductor package and fabrication process thereof
JP3663120B2 (en) Mounting structure and mounting method for automobile engine control unit
JP2007281250A (en) Semiconductor light emitting apparatus
JP2007250887A (en) Laminated type semiconductor device
JP2011228336A (en) Semiconductor device and method for manufacturing the same
TW200938016A (en) Surface mounted chip resistor with flexible leads
JP2006179538A (en) Semiconductor power module
US8023277B2 (en) Electronic component integrated module
JP6589985B2 (en) Manufacturing method of LED mounting substrate
JP4283741B2 (en) Resin mold module and manufacturing method thereof
JP3338473B2 (en) Optical device manufacturing method
JP4359076B2 (en) Resin hollow package and semiconductor device using the same
JP5650330B2 (en) Electronic element and soldering method
US7719095B2 (en) Lead frame and semiconductor device provided with lead frame
TW540131B (en) Mask sheet for assembly of semiconductor device and assembling method of semiconductor device

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040927

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20041001

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041130

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20050414

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20050506

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20050606

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050705

A911 Transfer of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20050708

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20050802

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20050803

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090812

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090812

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100812

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100812

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110812

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110812

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120812

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120812

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130812

Year of fee payment: 8

LAPS Cancellation because of no payment of annual fees