CN110907071B - Nano-level near-field thermal radiation high-precision measuring device and measuring method - Google Patents

Nano-level near-field thermal radiation high-precision measuring device and measuring method Download PDF

Info

Publication number
CN110907071B
CN110907071B CN201911029275.7A CN201911029275A CN110907071B CN 110907071 B CN110907071 B CN 110907071B CN 201911029275 A CN201911029275 A CN 201911029275A CN 110907071 B CN110907071 B CN 110907071B
Authority
CN
China
Prior art keywords
sample
cold
source end
motion displacement
micro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201911029275.7A
Other languages
Chinese (zh)
Other versions
CN110907071A (en
Inventor
何赛灵
孙勇成
陈肇扬
史可樟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
South China Normal University
Original Assignee
South China Normal University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by South China Normal University filed Critical South China Normal University
Priority to CN201911029275.7A priority Critical patent/CN110907071B/en
Publication of CN110907071A publication Critical patent/CN110907071A/en
Application granted granted Critical
Publication of CN110907071B publication Critical patent/CN110907071B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K17/00Measuring quantity of heat

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)

Abstract

The invention discloses a nano-level near-field thermal radiation high-precision measuring device and a measuring method, wherein the device comprises a vacuum cavity, a macro-motion displacement table, a micro-motion displacement table, a heating plate, a refrigerating plate, an L-shaped adapter plate, a first thermistor, a second thermistor, a heat dissipation device, a deflection table, a peripheral circuit and a constant voltage source; the micro-motion displacement platform is arranged on the macro-motion displacement platform, controllable movement of a large-range distance from 1nm to 10cm is achieved by means of combination of the micro-motion displacement platform and the macro-motion displacement platform, near-field heat radiation can be measured more accurately and can reach a hundred-nanometer level, the gap distance of 170nm is measured through experiments, the near-field heat radiation quantity is measured, the surface area is 5 multiplied by 5mm2, and the minimum distance and the higher heat radiation efficiency are achieved in the aspect of measuring the near-field heat radiation by a large flat plate.

Description

Nano-level near-field thermal radiation high-precision measuring device and measuring method
Technical Field
The invention belongs to the technical field of energy transmission, and relates to a nano-grade near-field thermal radiation high-precision measuring device.
Background
Near-field radiation plays an important role in the fundamental application research of radiation cooling and thermo-photo-voltaic devices (thermo-electro-voltaic devices), in head thermal processing, thermal assistance in data storage, and other micro-electro-mechanical devices. The near-field thermal radiation phenomenon is properly applied, so that the photoelectric conversion efficiency can be greatly improved, meanwhile, the near-field thermal radiation is widely applied in the aspect of developing renewable energy technology, along with the development of renewable energy and rare earth resources and the production and processing of nonferrous metals, higher requirements are put forward on the accuracy of technology and equipment, namely, when a new technology is developed and the spectral radiation characteristic and the transmission rule of a system are researched, the near-field thermal radiation transmission mechanism needs to be analyzed from a microscopic angle, the general rule of microscopic heat transfer is searched, and the butt joint of the technology and the theory is further realized. Therefore, research on spectral radiation characteristics and transmission theory in microscopic nanoscale has great theoretical and practical significance in understanding mechanisms and rules of radiation heat exchange and further improving thermal design of related technologies or systems. Therefore, a series of near-field thermal radiation measurement experiments and articles are published, and the near-field thermal radiation is also a popular research direction.
The similar experimental scheme is as follows: the first method is to use a modified scanning probe as a heat radiation receiving end, use laser to hit the scanning probe, and make reflected light reach a four-quadrant detector receiver, and obtain the heat radiation amount by checking the position of the reflected light. Although the technical scheme can reach the level of several nanometers by utilizing the scanning probe, in engineering practice, near-field heat radiation between flat plates has higher research value and practicability, and the device is complex, has poor experimental repeatability and cannot be applied to practice.
The second type is a device for processing a micro-nano electromechanical system, wherein a micro actuator mechanism controls the distance between two micro facets by utilizing the principle of expansion with heat and contraction with cold to research the near-field heat radiation phenomenon. The technical scheme combines the traditional mechanical device with a micro-motor device, has complex structure and manufacturing process, and needs to perform mechanical deformation analysis and the like in advance. According to the technical scheme, the upper displacement loading table, the lower displacement loading table and the optical fiber distance measurement are utilized, the measurement is not accurate by an experimental method, only micrometer-level thermal radiation can be measured, the distance of the near-field thermal radiation which is obvious is in a nanometer level, and the usability is not high.
Disclosure of Invention
The invention mainly aims to overcome the defects in the prior art, provides a set of femur far-end personalized bone cutting guide plate for knee joint replacement surgery, which is convenient to operate and can realize accurate positioning, and reduces materials and design difficulty as much as possible under the condition of meeting conditions, thereby improving the design efficiency.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention relates to a nano-level near-field thermal radiation high-precision measuring device which comprises a vacuum cavity, a macro-motion displacement table, a micro-motion displacement table, a heating plate, a refrigerating plate, an L-shaped adapter plate, a first thermistor, a second thermistor, a heat dissipation device, a deflection table, a peripheral circuit and a constant voltage source, wherein the macro-motion displacement table is arranged on the vacuum cavity; the micro-motion displacement platform is arranged on the macro-motion displacement platform, the macro-motion displacement platform is used for long-distance movement measurement, the micro-motion displacement platform is used for nano-level movement measurement, and the combination of the high-precision low-movement range of the micro-motion displacement platform and the low-precision high-movement range of the macro-motion displacement platform is utilized to realize the high-precision high-movement range on the forward displacement; the L-shaped adapter plate is arranged on the micro-motion displacement table, the heating sheet is arranged on the L-shaped adapter plate, the heating sheet is connected to the outside of the vacuum cavity through a lead, and one end of the first thermistor is arranged on the heating sheet; the deflection rotary table is opposite to the micro-motion mobile table, the deflection of the zc and yc double axes of the deflection rotary table enables a sample sheet of a cold source to deflect in a double axis mode, the heat dissipation device is arranged on the deflection rotary table, the heat dissipation device is opposite to the L-shaped adapter plate, the refrigerating sheet is arranged on the heat dissipation device, and one end of the second thermistor is arranged on the refrigerating sheet; the heating plate is provided with a heat source end position, the heat source end position is used for placing a heat source end sample plate, Vin of the heat source end sample plate is connected with the anode of an external constant voltage source, the refrigerating plate is provided with a cold source end position, the cold source end position is used for placing a cold source end sample plate, and a gold electrode of the cold source end sample plate is connected with an amplifying circuit of a peripheral circuit firstly and then connected with the cathode of the external constant voltage source.
As a preferred technical scheme, the L-shaped adapter plate and the micro displacement table are tightly connected through a connecting screw. As a preferable technical scheme, a precision electric meter is arranged outside the vacuum cavity, and the other ends of the first thermistor and the second thermistor are connected to the precision electric meter.
As a preferred technical scheme, the position of a sample to be detected is determined to be in contact by checking a current signal of a peripheral circuit, if an electrode is connected, a cold source end and a hot source end are in short circuit, current passes at the moment, a gold electrode at a corresponding angle is in contact by checking the current, and a flat sample piece is subjected to a mode of detecting an electric signal.
The measuring method of the nanometer-level near-field thermal radiation high-precision measuring device comprises the following steps:
s1, processing the detection sample to manufacture a sample piece;
s2, sticking sample detection pieces to a cold source end position and a hot source end position respectively, and vertically placing the hot source end sample piece and the cold source end sample piece;
s3, moving the sample piece to the positive direction through the macro-motion displacement table until the heat source end sample piece and the cold source end sample piece are close to each other, if an electric signal is generated, the heat source end sample piece is contacted with a certain electrode of the cold source end sample piece, and further the heat source end sample piece is contacted with the cold source end sample piece at a certain angle, at the moment, retreating and leaving are carried out by using the micro-motion displacement table, then the x axis is adjusted, so that the electrode which is just touched is relatively far away, then, moving forwards is carried out, and the processes are repeated until the two electrodes are touched; at the moment, waiting for the micromotion displacement table to retreat away, then adjusting the y axis to enable the two electrodes which are just collided to be relatively far away, then moving forward, and repeating the above processes until the four electrodes are collided;
s4, the rotation x axis and the rotation y axis of the micro-motion displacement table and the deflection table are matched to enable the four electrodes to generate signals, and at the moment, the four gold electrodes of the cold and heat source sample chip are contacted, so that the heat source end sample chip and the cold source end sample chip are parallel;
s5, opening the heating plate and the refrigerating plate, reading the temperature of the cold and hot source through the thermistor, controlling the temperature of the cold and hot source to be stable at a temperature value by adjusting the voltage of the heat source heater and the cold source refrigerating plate, if the temperature of the cold source is higher than a measured value, realizing the temperature stability of the cold source by increasing the voltage of the refrigerating plate, and if the temperature of the cold source is lower than the measured value, realizing the temperature stability of the cold source by reducing the voltage of the refrigerating plate;
s6, after the distance between the samples is adjusted, connecting the data and covering the vacuum cover, vacuumizing the vacuum cavity device, when the vacuum degree of the vacuum cavity reaches below 10^ (-4) pa, opening the heating plate and the refrigerating plate, reading the temperature of the cold and heat source through the thermistor, controlling the temperature of the cold and heat source to be stable at a temperature value by adjusting the voltage of the heat source heater and the cold source refrigerating plate,
s7, the near-field thermal radiation energy at 120nm can be measured by retreating the micromotion displacement table by 10nm, the measurement of the radiation energy is to keep the temperature of the cold source and the heat source unchanged by adjusting the voltage of the cold and heat source constant voltage source, and the power at the distance is obtained by multiplying the voltage and the current value at the distance, namely subtracting the power of the far-field heat source from the power, namely measuring the near-field thermal radiation value.
As a preferred technical scheme, the sample is prepared by the following steps:
a negative photoresist adhesion layer was first deposited on the wafer, then a 50nm thick gold layer was sputter deposited using a coater, the unwanted gold coating was wet etched with a photoresist solution and the same mask was used, then the gold electrode pads were left on the quartz wafer by stripping the remaining photoresist and the samples could be separated by dicing the wafer.
As a preferred technical scheme, after the sample is prepared, the surface of the sample is cleaned according to the following steps:
(a) washing the sample with acetone;
(b) washing off the acetone with Isopropanol (IPA);
(c) rinsing the sample with distilled water (DI);
(d) drying the sample using a nitrogen gun;
(e) the sample was placed in an ozone cleaner to remove any organic contaminants.
Compared with the prior art, the invention has the following advantages and beneficial effects:
1. according to the measuring device, the large flat plate is enabled to measure the thermal radiation in parallel through the electric signals of the electrode plates, so that the parallelism of experimental samples can be effectively guaranteed, and the thermal radiation efficiency is higher.
2. The present invention studies accurate measurements of near-field radiative energy transfer between two macroscopic sio2 plates that support surface phonon polarization. The combination of the micro-motion displacement table and the macro-motion displacement table is utilized to realize controllable movement of a large-range distance from 1nm to 10cm, near-field heat radiation can be measured more accurately and can reach a hundred-nanometer level, 170nm gap distance measurement near-field heat radiation amount is realized through experiments, the surface area is 5 multiplied by 5mm2, and the minimum distance and the higher heat radiation efficiency are achieved in the aspect of measuring the near-field heat radiation by a large flat plate.
3. According to the invention, a thermal radiation energy diagram of near-field thermal radiation at different intervals is measured in an experiment, and compared with a theoretical calculated value, the thermal radiation enhancement is observed to be many times compared with the limit of a black body. This significant enhancement was demonstrated by comparison with theoretical predictions based on wave electrodynamics, due to the transfer of sonar polarization energy in the nanoscale vacuum gap.
Drawings
FIG. 1 is a schematic diagram of the structure of the apparatus of the present invention;
fig. 2 is a circuit configuration diagram of a peripheral circuit;
FIG. 3 is a process of deflection versus flushness;
fig. 4 is a front view of the deflection table.
The reference numbers illustrate: 1-macro-motion displacement table; 2-a micro-motion displacement table; 3-a screw; 4-L-shaped adapter plates; 5-a first thermistor; 6-heating plate; 7-a second thermistor; 8-refrigerating sheets; 9-a heat sink; 10-offset rotary table; 11-Cold Source end position; 12-end position of heat source.
Detailed Description
The present invention will be described in further detail with reference to examples and drawings, but the present invention is not limited thereto.
Examples
As shown in fig. 1, the technical solution provided by the present invention is that a nano-scale near-field thermal radiation high-precision measuring apparatus comprises: the device comprises a vacuum cavity, a macro-motion displacement table 1, a micro-motion displacement table 2, a heating plate 6, a refrigerating plate 8, an L-shaped adapter plate 4, a first thermistor 5, a second thermistor 7, a precision electric meter, a heat dissipation device 9, a deflection table 10, a peripheral circuit, a constant voltage source and a power meter; the micro-motion displacement platform 2 is arranged on the macro-motion displacement platform 1 and fixed through screws, and the high-precision low-movement range of the micro-motion displacement platform and the low-precision high-movement range of the macro-motion displacement platform can be ingeniously combined, so that the high-precision high-movement range can be achieved on the forward displacement, for example, the macro-motion displacement platform is used when the moving is required to be far, and the micro-motion displacement platform is used when the nano-level moving measurement is required. The L-shaped adapter plate 4 is arranged on the micro-motion displacement table 2, then the L-shaped adapter plate 4 and the micro-motion displacement table 2 are tightly connected through a connecting screw 3, the heating plate 6 is arranged on the L-shaped adapter plate 4, the heating plate 6 is connected to the outside of the vacuum cavity through a lead, and the first thermistor 5 is arranged on the heating plate 6; the deflection table 10 is arranged opposite to the micro-motion moving table 2, as shown in fig. 4, the deflection table is a front view of the deflection table, the deflection table can deflect a sample plate of a cold source in a double-shaft mode through the deflection of a zc double shaft and a yc double shaft, the heat dissipation device 9 is arranged on the deflection table 10, the heat dissipation device 9 is arranged opposite to the L-shaped adapter plate 4, the refrigerating plate 8 is arranged on the heat dissipation device 9, and the second thermistor 7 is arranged on the refrigerating plate 8. As shown in fig. 3, a heat source end position 12 is arranged on the heating plate 6, the heat source end position 12 is used for placing a heat source end sample plate, Vin of the heat source end sample plate is connected with an anode of an external constant voltage source, a cold source end position 11 is arranged on the refrigerating plate 8, the cold source end position 11 is used for placing a cold source end sample plate, and a gold electrode of the cold source end sample plate is connected with an amplifying circuit of a peripheral circuit and then connected with a cathode of the external constant voltage source.
In this embodiment, the measurement method of the nano-scale near-field thermal radiation high-precision measurement apparatus includes the following steps:
s1, processing the detection sample to manufacture a sample piece;
s2, sticking sample detection pieces to a cold source end position 11 and a hot source end position 12 respectively, and vertically placing the hot source end sample pieces and the cold source end sample pieces;
s3, moving the sample piece to the positive direction through the macro-motion displacement table until the heat source end sample piece and the cold source end sample piece are close to each other, if an electric signal is generated, the heat source end sample piece is contacted with a certain electrode of the cold source end sample piece, and further the heat source end sample piece is contacted with the cold source end sample piece at a certain angle, at the moment, retreating and leaving are carried out by using the micro-motion displacement table, then the x axis is adjusted, so that the electrode which is just touched is relatively far away, then, moving forwards is carried out, and the processes are repeated until the two electrodes are touched; at the moment, waiting for the micromotion displacement table to retreat away, then adjusting the y axis to enable the two electrodes which are just collided to be relatively far away, then moving forward, and repeating the above processes until the four electrodes are collided;
s4, the rotation x axis and the rotation y axis of the micro-motion displacement table and the deflection table are matched to enable the four electrodes to generate signals, and at the moment, the four gold electrodes of the cold and heat source sample chip are contacted, so that the heat source end sample chip and the cold source end sample chip are parallel;
s5, opening the heating plate 6 and the refrigerating plate 8, reading the temperature of the cold and hot sources through the thermistor, controlling the temperature of the cold and hot sources to be stable at a temperature value by adjusting the voltage of the heat source heater and the cold source refrigerating plate, if the temperature of the cold source is higher than a measured value, realizing the temperature stability of the cold source by adjusting the voltage of the refrigerating plate, and if the temperature of the cold source is lower than the measured value, realizing the temperature stability of the cold source by reducing the voltage of the refrigerating plate;
s6, after the distance between the samples is adjusted, connecting the data and covering the vacuum cover, vacuumizing the vacuum cavity device, when the vacuum degree of the vacuum cavity reaches below 10^ (-4) pa, opening the heating plate and the refrigerating plate 8, reading the temperature of the cold and heat source through the thermistor, controlling the temperature of the cold and heat source to be stable at a temperature value by adjusting the voltage of the heat source heater and the cold source refrigerating plate,
s7, the near-field thermal radiation energy at 120nm can be measured by retreating the micromotion displacement table by 10nm, the measurement of the radiation energy is to keep the temperature of the cold source and the heat source unchanged by adjusting the voltage of the cold and heat source constant voltage source, and the power at the distance is obtained by multiplying the voltage and the current value at the distance, namely subtracting the power of the far-field heat source from the power, namely measuring the near-field thermal radiation value.
In this embodiment, the peripheral circuit is used for parallel implementation and parallel test, and the contact at the position of the test sample can be determined by checking the current signal of the peripheral circuit, if the electrode is connected, a cold source end and a hot source end are short-circuited, current passes at this time, the gold electrode contact at the corner can be obtained by checking the current, and the sample piece is aligned in a way of detecting the electric signal, so that the error height difference of the sample piece can reach 10 nm. If four corners of the experimental gold electrode are all in contact, four high level signals are checked, and it can be determined that the experimental device is parallel. Four rectangular gold electrodes are shown at the four corners of fig. 3. Then the temperature of the heat source is measured by the first thermistor 5, the temperature of the cold source is measured by the second thermistor 7, the other end of the thermistor can be connected with a precision electric meter outside the vacuum cavity to read the resistance value, the read resistance value corresponds to the thermistor temperature resistance meter, the temperature value is ensured, and the temperature of the heat source and the cold source is obtained by the method. Two pins of the heating sheet 6 can be connected to the outside of the vacuum cavity through wires, voltage is supplied to the heating sheet through a constant voltage source, different heat source heating temperatures can be obtained through different voltage values, the heating temperature of the heating sheet is increased along with the increase of the voltage, therefore, the heat source temperature obtained by the thermistor can be used in cooperation with the heat source heating sheet, and the voltage of the heating sheet can be adjusted to enable a heat source end to obtain a temperature value required by an experiment. The temperature value measured by the thermistor of the heat source is the temperature value of the surface of the heat source sample piece, because the two objects are in direct contact. Two pins of refrigeration piece can be connected to the vacuum cavity through the wire outside, give its voltage through the constant voltage source, different voltage value can obtain different cold source refrigeration temperature, the absorptive heat of refrigeration piece is along with the increase of voltage and grow, can utilize the cold source temperature that thermistor obtained and the cooperation of cold source refrigeration piece to use like this, can adjust refrigeration piece voltage and make the cold source end obtain the temperature value that the experiment was wanted. The temperature value measured by the cold source thermistor is the temperature value of the surface of the cold source sample chip, because the two objects are in direct contact. Then, sample pieces of cold and heat sources are fixed at the cold source end position 11 and the hot source end position 12. The sample piece is rectangular, two corners are composed of four small gold electrodes, the gold electrodes are also rectangular, but the gold electrodes are smaller when viewed from the sample piece, the cold and heat source gold electrodes are used for enabling the sample piece to be parallel, and the principle is as follows: the heat source side rectangular sample piece and the cold source side rectangular sample piece are vertically arranged, for example, as shown in fig. 3, because the gold electrodes are arranged at four corners of the rectangular sample piece, when two sample pieces are contacted, the gold electrodes at four corners are contacted, the cold and heat source gold electrode lead-out wires are connected with an external circuit, the heat source gold electrode is connected with the anode of the constant voltage source, the gold electrode of the cold source is connected with the cathode of the constant voltage source, when two sample pieces are not contacted, the circuit is equivalent to open circuit, no current signal exists, the presence or absence of contact at the four corners of the sample piece can be judged by checking the current through an external circuit, when a certain corner has contact, a current signal is triggered, the current data acquisition card can be used for acquiring current signals, and the corner of the hot and cold source sample piece can be judged to be touched, if the four corners are touched, it indicates that the two sample pieces have reached parallelism because the gold electrodes at the four corners of the sample pieces are the same height. Then, the cold and heat source sample piece is moved away through the micro-motion displacement table, so that the heat radiation amount of different intervals can be measured, the height of the gold electrodes of the cold and heat source used in the experiment of the embodiment is 55nm, when the four gold electrodes have signals, the distance of the sample piece is 110nm, and then the near-field heat radiation energy can be measured from 110 nm.
Wherein the gold electrode processing of the sample comprises the following main steps. The samples were made from single crystal quartz wafers 500 μm thick, 4 inch diameter. A negative photoresist adhesion layer was first deposited on the wafer, and then a 50nm thick gold layer was sputter deposited using a coater. We wet the unwanted gold coating with a de-gumming solution and use the same mask. The choice of photolithographic process rather than lift-off method is primarily to obtain a more uniform and sharp-edged metal layer. Then, the gold electrode pads were left on the quartz wafer by stripping off the remaining photoresist, and the sample could be separated by dicing the wafer. After sample preparation, we cleaned the sample surface according to the following steps: (a) we washed the sample with acetone, (b) washed the acetone off with isopropyl alcohol (IPA), (c) rinsed the sample with distilled water (DI), (d) dried the sample using a nitrogen gun, (e) placed the sample in an ozone cleaner to remove any organic contaminants. The surface height difference of a sample is smaller than 50nm, rectangular sample pieces with the gold electrode height of 55nm are manufactured by the method, the sample pieces are attached to a cold source end position 11 and a hot source end position 12 in the figure 1, and the hot source end rectangular sample pieces and the cold source end rectangular sample pieces are vertically arranged. Then move the sample slice to the positive direction through the macro-motion displacement platform first, the macro-motion displacement platform moves 400nm at every step, until the sample slice leans on, there is the signal of telecommunication to produce, explain a certain electrode contact of sample slice, and then explain a certain angular contact of sample slice, use the micro-motion displacement platform to advance and retreat this time, the micro-motion displacement platform uses PI company's house with the deflection platform, the micro-motion displacement platform precision can reach a step length and be 1nm, the deflection platform precision can reach a step length deflection angle and be 1 micro radian. Then, the micro-motion displacement table and the deflection table are used in a matched mode to rotate the x axis and the y axis, so that signals are generated on the four electrodes, and at the moment, the four gold electrodes of the sample piece of the cold and heat source are in contact with each other, as shown in fig. 3, the four gold electrodes are in contact with each other after the sample piece is aligned with each other. Because the gold electrodes at the four corners of the sample piece are the same in height, if the four gold electrodes are contacted, the cold and heat source sample piece is level. Then, the heating plate 6 and the refrigerating plate 8 are opened, the temperature of the cold and heat source is read through the thermistor, the temperature of the cold and heat source can be controlled to be stable at a temperature value by adjusting the voltage of the heat source heater and the cold source refrigerating plate, and heat flows through the sample assembly and the experimental device in the graph 2. Here, PH and PT EC are power supplied to the heater and TEC, respectively, and QR is radiant heat transfer between quartz plates. QLoss and Qout are the ambient heat loss and the heat dissipated by the heat sink, respectively. (b) Equivalent thermal circuit of experimental apparatus. Here, RH is the total thermal resistance of the heat emitter (sample plus carrier and heater), where RC is the total thermal resistance of the heat receiver (sample, carrier and TEC). Furthermore, ROut and RLoss are due to conduction to the heat sink and thermal resistance of far-field radiation to the surroundings, respectively. The temperatures of the heater and the TEC between the near-field heat radiation resistors are respectively. Assuming that the ambient temperature is T ∞ 300K, therefore, the sample surface temperature of the middle gap should be in the range TH, NF ≦ TH, FF and TC, FF ≦ TC, NF. The resulting temperature gradient should be in the range Δ TNF ≦ Δ T ≦ Δ TFF, where Δ TFF ═ TH, FF-TC, FF and Δ TNF ═ TH, NF-TC, NF. For example, when the heater and TEC temperatures are set to themater 496K and tte 310K, respectively, the far field calibration provides the sample temperature at TH, FF 360K and TC, and FF 313K. The field thermal circuit analysis provides TH, NF 363K and TC, NF 317K, which results in a temperature gradient in the range 152K ≦ Δ T ≦ 160K or Δ T156 ± 4K the heat emitter (and heat receiver) is calculated as RH 16.6[ K/W ], the temperature of the heater and TEC is measured by the RTD and maintained at the set point temperature by feedback control of the heater and TEC input power (Tsp1 and Tsp 2). The input power values were monitored in real time by an NI PXI controller connected by a homemade LabView code. After the distance between the samples is adjusted, the data is connected, the vacuum cover is covered, the vacuum cavity device is vacuumized, when the vacuum degree of the vacuum cavity reaches below 10^ (-4) pa, the heating plate 6 and the refrigerating plate 8 are opened, the temperature of the cold and heat source is read through the thermistor, the temperature of the cold and heat source can be controlled to be stable at a temperature value by adjusting the voltage of the heat source heater and the cold source refrigerating plate, then the near-field heat radiation energy at 120nm can be measured by retreating the micro displacement platform by 10nm, the measurement of the radiation energy is realized by adjusting the voltage of the cold and heat source constant voltage source to keep the temperature of the cold source and the heat source constant, the power of the heat source at the far field is subtracted by the voltage and the current value at the distance, the power at the distance can be obtained, namely the near-field heat radiation value is measured, then the steps are repeated, and the near-field heat radiation at different, the device can measure the near-field thermal radiation in the range of 120 nanometers to 2 micrometers, and greatly improves the measurement range and precision.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.

Claims (7)

1. A nanometer-level near-field thermal radiation high-precision measuring device is characterized by comprising a vacuum cavity, a macro-motion displacement table (1), a micro-motion displacement table (2), a heating plate (6), a refrigerating plate (8), an L-shaped adapter plate (4), a first thermistor (5), a second thermistor (7), a heat dissipation device (9), a deflection table (10), a peripheral circuit and a constant voltage source; the micro-motion displacement platform (2) is arranged on the macro-motion displacement platform (1), the macro-motion displacement platform (1) is used for long-distance movement measurement, the micro-motion displacement platform (2) is used for nano-level movement measurement, and the combination of the high-precision low-movement range of the micro-motion displacement platform and the low-precision high-movement range of the macro-motion displacement platform is utilized to realize the high-precision high-movement range on the advancing displacement; the L-shaped adapter plate (4) is arranged on the micro-motion displacement table (2), the heating sheet (6) is arranged on the L-shaped adapter plate (4), the heating sheet (6) is connected to the outside of the vacuum cavity through a lead, and one end of the first thermistor (5) is arranged on the heating sheet (6); the deflection rotary table (10) is arranged opposite to the micro-motion displacement table (2), the deflection rotary table enables a sample plate of a cold source to deflect in a double shaft mode through the deflection of a zc double shaft and a yc double shaft, the heat dissipation device (9) is arranged on the deflection rotary table (10), the heat dissipation device (9) is arranged opposite to the L-shaped adapter plate (4), the refrigerating plate (8) is arranged on the heat dissipation device (9), and one end of the second thermistor (7) is arranged on the refrigerating plate (8); be equipped with hot source end position (12) on heating plate (6), hot source end position (12) are used for placing hot source end sample piece, and the positive pole of outside constant voltage source is connected to the Vin of hot source end sample piece, be equipped with cold source end position (11) on refrigeration piece (8), cold source end position (11) are used for placing cold source end sample piece, the gold electrode of cold source end sample piece connects peripheral circuit's amplifier circuit earlier, connects the negative pole of outside constant voltage source again.
2. The nanoscale near-field thermal radiation high-precision measurement device according to claim 1, characterized in that the L-shaped adapter plate (4) and the micro displacement stage (2) are tightly connected through a connecting screw (3).
3. The nano-scale near-field thermal radiation high-precision measurement device according to claim 1, wherein a precision electric meter is arranged outside the vacuum chamber, and the other ends of the first thermistor (5) and the second thermistor (7) are connected to the precision electric meter.
4. The apparatus of claim 1, wherein the current signal of the peripheral circuit is checked to determine where the sample is in contact, if the electrodes are connected, the cold source end and the hot source end are short-circuited, and current passes through the electrodes, and the gold electrode contacts at the corresponding corners are contacted by checking the current to detect the electrical signal.
5. The measurement method of the nano-scale near-field thermal radiation high-precision measurement apparatus according to claim 1, characterized by comprising the following steps:
s1, processing the detection sample to manufacture a sample piece;
s2, sticking sample detection pieces to a cold source end position (11) and a hot source end position (12) respectively, and vertically placing the hot source end sample pieces and the cold source end sample pieces;
s3, moving the sample piece to the positive direction through the macro-motion displacement table until the heat source end sample piece and the cold source end sample piece are close to each other, if an electric signal is generated, the heat source end sample piece is contacted with a certain electrode of the cold source end sample piece, and further the heat source end sample piece is contacted with the cold source end sample piece at a certain angle, at the moment, retreating by using the micro-motion displacement table, then adjusting the x axis, so that the electrode which is just touched is relatively far away, and then moving forwards until the two electrodes are touched; at the moment, waiting for the micromotion displacement table to retreat and leave, then adjusting the y axis to enable the two electrodes which are just collided to be relatively far away, and then moving forwards until the four electrodes are collided;
s4, the rotation x axis and the rotation y axis of the micro-motion displacement table and the deflection table are matched to enable the four electrodes to generate signals, and at the moment, the four gold electrodes of the cold and heat source sample chip are contacted, so that the heat source end sample chip and the cold source end sample chip are parallel;
s5, opening the heating plate (6) and the refrigerating plate (8), reading the temperature of the cold and hot source through the thermistor, controlling the temperature of the cold and hot source to be stable at a temperature value by adjusting the voltage of the heat source heater and the cold source refrigerating plate, if the temperature of the cold source is higher than a measured value, realizing the temperature stability of the cold source by increasing the voltage of the refrigerating plate, and if the temperature of the cold source is lower than the measured value, realizing the temperature stability of the cold source by reducing the voltage of the refrigerating plate;
s6, after the distance between the samples is adjusted, connecting the data and covering the vacuum cover, vacuumizing the vacuum cavity device, when the vacuum degree of the vacuum cavity reaches below 10^ (-4) pa, opening the heating plate and the refrigerating plate (8), reading the temperature of the cold and heat source through the thermistor, controlling the temperature of the cold and heat source to be stable at a temperature value by adjusting the voltage of the heat source heater and the cold source refrigerating plate,
s7, the near-field thermal radiation energy at 120nm can be measured by retreating the micromotion displacement table by 10nm, the measurement of the radiation energy is to keep the temperature of the cold source and the heat source unchanged by adjusting the voltage of the cold and heat source constant voltage source, and the power at the distance is obtained by multiplying the voltage and the current value at the distance, namely subtracting the power of the far-field heat source from the power, namely measuring the near-field thermal radiation value.
6. The method for measuring a nano-scale near-field thermal radiation high-precision measuring device according to claim 1, wherein the sample is prepared by:
a negative photoresist adhesion layer was first deposited on the wafer, then a 50nm thick gold layer was sputter deposited using a coater, the unwanted gold coating was wet etched with a photoresist solution and the same mask was used, then the gold electrode pads were left on the quartz wafer by stripping the remaining photoresist and the samples could be separated by dicing the wafer.
7. The method for measuring a nano-scale near-field thermal radiation high-precision measuring device according to claim 6, wherein after the sample is manufactured, the surface of the sample is cleaned according to the following steps:
(a) washing the sample with acetone;
(b) washing off the acetone with Isopropanol (IPA);
(c) rinsing the sample with distilled water (DI);
(d) drying the sample using a nitrogen gun;
(e) the sample was placed in an ozone cleaner to remove any organic contaminants.
CN201911029275.7A 2019-10-28 2019-10-28 Nano-level near-field thermal radiation high-precision measuring device and measuring method Active CN110907071B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911029275.7A CN110907071B (en) 2019-10-28 2019-10-28 Nano-level near-field thermal radiation high-precision measuring device and measuring method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911029275.7A CN110907071B (en) 2019-10-28 2019-10-28 Nano-level near-field thermal radiation high-precision measuring device and measuring method

Publications (2)

Publication Number Publication Date
CN110907071A CN110907071A (en) 2020-03-24
CN110907071B true CN110907071B (en) 2021-02-19

Family

ID=69816126

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911029275.7A Active CN110907071B (en) 2019-10-28 2019-10-28 Nano-level near-field thermal radiation high-precision measuring device and measuring method

Country Status (1)

Country Link
CN (1) CN110907071B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113204028A (en) * 2021-05-07 2021-08-03 哈尔滨工业大学 Near-field thermal radiation experimental device and leveling method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004031869A (en) * 2002-06-28 2004-01-29 Toyoda Gosei Co Ltd Near-field optical element
US9570679B2 (en) * 2013-08-27 2017-02-14 Globalfoundries Inc. Nanodevice assemblies
CN107367524A (en) * 2017-08-28 2017-11-21 桂林电子科技大学 A kind of near field heat radiation experimental provision
CN109405625A (en) * 2018-09-11 2019-03-01 上海交通大学 Near field thermal radiation system and preparation method thereof
CN110079774A (en) * 2019-03-28 2019-08-02 哈尔滨工业大学 A kind of thermal induced phase transition thermal control skin based near field heat radiation and its application in spacecraft

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004031869A (en) * 2002-06-28 2004-01-29 Toyoda Gosei Co Ltd Near-field optical element
US9570679B2 (en) * 2013-08-27 2017-02-14 Globalfoundries Inc. Nanodevice assemblies
CN107367524A (en) * 2017-08-28 2017-11-21 桂林电子科技大学 A kind of near field heat radiation experimental provision
CN109405625A (en) * 2018-09-11 2019-03-01 上海交通大学 Near field thermal radiation system and preparation method thereof
CN110079774A (en) * 2019-03-28 2019-08-02 哈尔滨工业大学 A kind of thermal induced phase transition thermal control skin based near field heat radiation and its application in spacecraft

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
近场热辐射的最新研究进展;张纪红等;《红外》;20190605;第40卷(第6期);全文 *

Also Published As

Publication number Publication date
CN110907071A (en) 2020-03-24

Similar Documents

Publication Publication Date Title
CN204594875U (en) A kind of thin film high temperature photoelectricity physical property testing device
CN102607701B (en) Fourier transformation miniature spectrometer based on moving mirror of micro-electro-mechanical system
CN110907071B (en) Nano-level near-field thermal radiation high-precision measuring device and measuring method
CN113437166B (en) Van der Waals heterojunction polarized light detector based on two-dimensional layered semiconductor material and preparation method thereof
CN112034002B (en) Device and method for measuring Seebeck coefficient of thermoelectric material
CN104880436A (en) Film high-temperature photoelectric physical property testing device
CN112881464B (en) Method and device for directly and comprehensively measuring thermoelectric performance of micro-nano material in situ
CN112909155A (en) Detector for directly measuring thermoelectric figure of merit of micro-nano material and preparation process
CN104111267A (en) Thin film material Seebeck coefficient measuring instrument
CN102818820B (en) System for measuring heat conductivity coefficient of nano materials based on vanadium dioxide nano wires
CN113936840B (en) Temperature control X-ray deformable mirror
Lucchesi et al. Harnessing near-field thermal photons with efficient photovoltaic conversion
CN110108770B (en) High-flux electric card test system based on space thermal imaging technology
CN113009256A (en) In-situ bending device for testing performance of flexible film
CN111103318A (en) Method and system for testing thermal conductivity of low-dimensional material
JP2001004455A (en) Method and device for measuring minute surface temperature distribution
US20230061802A1 (en) Systems, Methods, and Semiconductor Devices
CN113447785B (en) Method for testing Peltier effect of organic semiconductor material
TW201908527A (en) Method for fabricating thin film electrode of normal temperature gas sensor chip by using ultrafast laser performing a more complicated and faster processing procedure in a green production manner to meet the needs of a product
CN114487607A (en) Testing device and testing method for contact resistivity of variable-temperature heterogeneous interface
CN202770798U (en) System for measuring heat conductivity coefficients of nanometer materials based on vanadium dioxide nano-wires
CN112666126A (en) Two-dimensional material optical/electrical performance test system
CN202547779U (en) Fourier transformation micro-spectrometer based on micro-electro-mechanical system moving mirror
CN112595750A (en) Near-field thermal radiation detector based on transient plane heat source and measuring method
Serio et al. A gold–palladium thin-film microsensor array for thermal imaging of laser beam waists

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant