CN204594875U - A kind of thin film high temperature photoelectricity physical property testing device - Google Patents
A kind of thin film high temperature photoelectricity physical property testing device Download PDFInfo
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- CN204594875U CN204594875U CN201520275129.3U CN201520275129U CN204594875U CN 204594875 U CN204594875 U CN 204594875U CN 201520275129 U CN201520275129 U CN 201520275129U CN 204594875 U CN204594875 U CN 204594875U
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Abstract
The utility model discloses a kind of thin film high temperature photoelectricity physical property testing device, it comprises temperature controlled column tubular furnace, sample test platform, temperature measurement unit, film surface reflective light intensity measuring unit, sheet resistance detecting unit and computing machine.Tested film by temperature controlled column diamond heating, and to be vertically placed in stove in flat-temperature zone; Thermopair is placed in vacuum drying oven near sample, detects sample temperature in real time.Laser can be reflected back from optical window normal incidence to the film surface in stove outside received by Photoelectric Detection module and measure.Sample is connected with outside constant current source and nanovoltmeter by four metal probes on test board, utilizes vanderburg method automatically realize the quick handover measurement of probe by program and calculate sheet resistance.This system can room temperature to high-temperature region synchronous film former reflective light intensity and electrical resistance temperature variation curve calculate the photoelectricity related property parameter of film, for the high reliability of material wide temperature photoelectricity physical measurement and robotization provide guarantee.
Description
Technical field
The utility model relates to a kind of physical property testing device, specifically a kind of thin film high temperature photoelectricity physical property testing device.
Background technology
Function film, particularly photoelectric function thin films, be microelectronics and optoelectronic material foundation, and be widely used in semiconductor electronics industry.Wherein, chalcogen phase-change thin film is widely used in the field such as high density data storage and clean energy resource because it is distinctive with the optical, electrical reversible variation characteristic of temperature correlation, becomes domestic and international study hotspot.
In practical application, the serviceability of function film particularly semiconductor optoelectronic thin-film device is subject to extraneous thermal effect, and therefore the temperature characterisitic of Study of Thin membrane material is extremely important to its application in device.Particularly along with the microelectronic fast development of high temperature, the high temperature photoelectric functional characteristic of function film device material and temperature stability are had higher requirement.The research of optoelectronic film high temperature physical measurement is seemed particularly crucial.Change due to resistance and optical parameter with temperature correlation is all important signs of film material with function functional characteristic, therefore realizing high temperature film resistance to change with the synchronous accurately transport mechanics and microcosmic parameter measured understanding film in depth of optical reflectivity, particularly having significant application value and theory significance to research and development new type high temperature device material.By not only film material property and temperature stability thereof can be studied to the synchro measure of the photoelectricity physical property with temperature correlation, and contribute to regulating component, Optimal performance.
In order to realize the photoelectricity physical measurement of membraneous material under hot conditions, the easy method of general employing at present, namely after utilizing heating plate or heating furnace that sample is heated to a certain temperature, directly in atmosphere or take out measure, when causing sample to be measured, actual temperature and design temperature are quite inconsistent.Thus measurement result can not reflect photoelectric parameter and the characteristic of material under true temperature, cannot realize quantitative Measurement accuracy.In order to accurately measure the hot properties parameter of film sample, when requiring high temperature measurement, residing for sample, regional temperature is even, without obvious thermograde.Meanwhile, when requiring that sample is measured, whole device impermeability is good, can measure, the interference of deaeration and aqueous vapor under vacuum or blanket gas environment.Still do not have at present relevant apparatus report can in the photoelectricity physical property of high temperature (to ~ 1000 DEG C) synchro measure film.
Utility model content
The purpose of this utility model is to provide a kind of thin film high temperature photoelectricity physical property testing device, it can realize thin film high temperature photoelectricity physical property Measurement accuracy, can be used to measurement function film reflector light intensity and the temperature variant relation of surface resistance simultaneously, solve the engineering problem of membraneous material high temperature photoelectricity physical property precision measurement.
To achieve these goals, the utility model adopts following technical scheme:
A kind of thin film high temperature photoelectricity physical property testing device, comprises temperature controlled column tubular furnace, sample test platform, temperature measurement unit, film surface reflective light intensity measuring unit, sheet resistance detecting unit and computing machine;
Described temperature controlled column tubular furnace comprises program-controlled heating tubular furnace and the vacuum pump in order to vacuumize this program-controlled heating tubular furnace, this program-controlled heating tubular furnace comprises the program control type heating furnace body quartz ampoule opening-like with the two ends be placed in this program control type heating furnace body, the first end opening of this quartz ampoule is equiped with first seal flange with transparent optical window, and the second end opening of this quartz ampoule is equiped with second seal flange with electrode output;
Described sample test platform is placed in the flat-temperature zone in described quartz ampoule, described sample test platform is provided with four metal probes, film sample to be installed on sample test platform and measured surface towards the first end opening of described quartz ampoule, these four metal probes contact respectively with near the border, four angular regions of the measured surface of film sample;
Described temperature measurement unit comprises thermopair and temperature transition gauge outfit, the measuring junction of described thermopair is placed in described quartz ampoule and is positioned near described film sample, the cold junction of described thermopair is electrically connected to the electrode output of described second seal flange, and described temperature transition gauge outfit is electrically connected with the cold junction of described thermopair by the electrode output of described second seal flange;
Described film surface reflective light intensity measuring unit comprises laser instrument, semi-transparent semi-reflecting prism, the first condenser lens, described transparent optical window, the second condenser lens, optical filter and Photoelectric Detection module, described laser instrument, described semi-transparent semi-reflecting prism, described first condenser lens and described transparent optical windowsill input path set gradually, and described transparent optical window, described first condenser lens, described semi-transparent semi-reflecting prism, described second condenser lens, described optical filter and described Photoelectric Detection module set gradually along reflected light path;
Described sheet resistance detecting unit adopts vanderburg method surface resistance measuring unit, it comprises constant current source, nanovoltmeter, circuit switching control module and described four metal probes, and described circuit switches control module and comprises probe input/output terminal change-over switch, current polarity change-over switch and data acquisition/control module, described four metal probes are electrically connected to the electrode output of described second seal flange respectively by high temperature wire correspondence, the port that the electrode output of described second seal flange corresponds to described four metal probes is connected to the corresponding input/output terminal of described probe input/output terminal change-over switch, the output terminal of described constant current source is connected to the corresponding input/output terminal of described probe input/output terminal change-over switch by described current polarity change-over switch, the input end of described nanovoltmeter connects the corresponding input/output terminal of described probe input/output terminal change-over switch, the output terminal of described nanovoltmeter is connected to the respective input of described computing machine, described data acquisition/control module is connected with described computing machine, the output terminal of described Photoelectric Detection module connects the signals collecting input end of described data acquisition/control module, and the gating control end of described data acquisition/control module is connected respectively the control input end of control input end to described probe input/output terminal change-over switch and described current polarity change-over switch.
Described second seal flange adopts vacuum electrode flange.
Described sample test platform has refractory ceramics table top, this refractory ceramics table top has four mounting holes, described four metal probes are respectively equipped with corresponding mounting hole, described four metal probes are arranged on this refractory ceramics table top respectively by metallic screw and metal nuts, and described four metal probes are electrically connected with described high temperature wire respectively by the metallic screw of correspondence and metal nuts; Described four metal probes pad the refractory ceramics pad being provided with to keep the measured surface of film sample and the Contact of corresponding metal probe good therewith respectively between refractory ceramics table top.
A kind of thin film high temperature photoelectricity of the utility model physical property testing device, during work, becomes temperature measurement unit with the built-in thermoelectric near film sample in stove is even with external temperature conversion table head group; Laser is arranged on the film sample surface on test board by flat-temperature zone in input path normal incidence to stove, Photoelectric Detection modular unit receives light signal that film sample surface reflection returns and converts electric signal transmission to and enters data acquisition/control module; Four metal probes, constant current source, nanovoltmeter and circuit that film sample test board is connected with high temperature wire electricity switch control module and form four point probe sheet resistance measuring unit; By computing machine unify control and management temperature survey, film surface reflective light intensity measure and surface resistance measure synchronous operation, make film reflector characteristic and resistance value vary with temperature curve can synchronously generate, realize the photoelectricity physical parameter of measurements and calculations film and temperature correlation, the high reliability measured for functional material high temperature photoelectric characteristic and robotization provide guarantee.
Compared with prior art, the utility model tool has the following advantages:
1) the utility model is owing to adopting the combination metering device measured of optical and electrical properties simultaneously, can the physical measurement ability of remarkable Study of Lifting wide temperature range film sample.Even if this combination metering device makes, to the sample with the change of larger surface reflectivity, still can realize high temperature non-contact type photo measure.Meanwhile, the resistance measurement of highly sensitive vanderburg method table realizes the measurement of variation resistance in large-temperature range.
2) owing to adopting temperature controlling stove to heat up and temperature control to sample, can control specimen material temperature well within the scope of room temperature ~ 1000 DEG C, obtain the photoelectric characteristic of material under this temperature range arbitrary temp.There is very wide temperature measurement range, widened application of the present utility model further.Meanwhile, residing for sample, Heating Zone Temperature is uniform and stable, and vacuum can eliminate the interference of air and steam simultaneously, ensures the accuracy that membraneous material is measured and precision.
3) the utility model not only can be widely used in the measurement of various membraneous material, also can realize the measurement of block materials simultaneously.Therefore, the utility model can be widely used in various material with the photoelectric characteristic high-acruracy survey of temperature correlation.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model proving installation embodiment.
Fig. 2 is the structural representation of sample test platform in Fig. 1.
Fig. 3 is the connection diagram that in Fig. 1, circuit switches each several part of control module.
Fig. 4 be use the utility model proving installation quartz substrate on the resistance of chalcogen phase-change thin film sample and the synchronous change curve of reflective light intensity.(sample temperature rise rate is 7.7 DEG C/min)
Embodiment
A kind of thin film high temperature photoelectricity of the utility model physical property testing device, as shown in Figure 1, comprises temperature controlled column tubular furnace, sample test platform, temperature measurement unit, film surface reflective light intensity measuring unit, sheet resistance detecting unit and computing machine.
Temperature controlled column tubular furnace comprises program-controlled heating tubular furnace 1 and the vacuum pump (not shown) in order to vacuumize this program-controlled heating tubular furnace, this program-controlled heating tubular furnace 1 comprises program control type heating furnace body 11 transparent quartz tube 12 opening-like with the two ends be placed in this program control type heating furnace body 11, conveniently can observe laser condition of incidence on sample by this quartz ampoule 12.The first end opening of this quartz ampoule 12 is equiped with first seal flange 13 with transparent optical window 131, and the second end opening of this quartz ampoule 12 is equiped with second seal flange 14 with electrode output.In in the middle part of quartz ampoule 12 being, two ends are outward, and inner side quartz ampoule 12 being positioned at the first seal flange 13 is provided with baro-vacuum gauge 15 and gas atmosphere inlet 16, and inner side quartz ampoule 12 being positioned at the second seal flange 14 is provided with vent valve 17, vacuum pump interface 18.
During work, connect vacuum pump by vacuum pump interface 18 and vacuumize to reduce furnace high-temperature district and outside heat interchange to quartz ampoule 12; Be filled with the blanket gas such as N2 or Ar by gas atmosphere inlet 16, protection sample, electrode and other each parts are not at high temperature oxidized, and increase the service life; Program control type heating furnace body 11 adopts existing program control type tubular heater body, the adjustable heating rate of its temperature controller carried and control furnace temperature are to setting measurement temperature value, temperature-controlled precision ± 1 DEG C, tubular furnace maximum temperature can be heated to 1200 DEG C, and in stove, temperature field in flat-temperature zone is even.
In the present embodiment, O type rubber seal is adopted by screw tightening, transparent optical window 131 to be fixed on the outer section (this section towards the first end opening of quartz ampoule 12) of the first seal flange 13; Second seal flange 14 adopts vacuum electrode flange; First seal flange 13 and the second seal flange 14 all adopt O type rubber seal and clip to complete to carry out crush seal with the corresponding port of quartz ampoule 12.
Sample test platform 2 is placed in the flat-temperature zone in described quartz ampoule 12, and as shown in Figure 2, sample test platform 2 comprises refractory ceramics table top 21, metal probe 22, metallic screw 23, metal nuts 24 and refractory ceramics pad 25; Refractory ceramics table top 21 is erected in quartz ampoule 12 by bracket base 211, that is, refractory ceramics table top 21 is towards the first seal flange 13.The periphery of refractory ceramics table top 21 is along being evenly distributed with four mounting holes, four metal probes 22 are the little structure in large one end, one end, its large end is respectively equipped with corresponding mounting hole, four metal probes 22 coordinate each corresponding mounting hole to be arranged on this refractory ceramics table top 21 respectively by metallic screw 23 and metal nuts 24, four metal probes 22 to carry out being electrically connected (high temperature wire 3 compressed reliably be connected) by metal nuts 24 respectively by the metallic screw 23 of correspondence with metal nuts 24 and one end of four high temperature wires 3, the other end of four high temperature wires 3 is connected to the electrode output of the second seal flange 14.Film sample 4 to be installed on refractory ceramics table top 21 and measured surface towards the first seal flange 13, four metal probes 22 contact respectively with near the border, four angular regions of the measured surface of film sample 4, particularly, in the present embodiment, film sample 4 is rectangle, four metal probes 22 contact respectively with near rectangular four angles, realize metal probe 22 and contact with the electricity on film sample 4 surface; In order to keep the measured surface of film sample 4 good with the Contact of corresponding metal probe 22, padding respectively between refractory ceramics table top 21 therewith at four metal probes 22 and establishing refractory ceramics pad 25.
In the utility model, four metal probes 22 carry out mechanical bond by screw-nut and sample test platform 2, facilitate taking of film sample, have good electric conductivity, can at high temperature normally work simultaneously.Metallic screw 23 on sample test platform 2, metal nuts 24 and metal probe 22 can select high-melting-point and the stable metal material of pyroelecthc properties as copper and stainless steel etc.High temperature wire 3 can adopt platinum line and cover has ceramic pipe to protect, to ensure the insulativity of high temperature wire.Refractory ceramics table top 21 and bracket base 211 can select suitable material according to the temperature finally reached in stove, ensure that material therefor does not produce the accuracy of distortion and impact measurement at set temperature.Refractory ceramics table top 21 by the pottery of high temperature resistant high heat conductance as the material such as aluminium oxide or aluminium nitride is made, can ensure the high-insulativity and heat-resisting quantity that contact with surveyed film sample 4.Refractory ceramics table top 21 smooth surface makes itself and film sample 4 contact the vibration reducing external environment and cause completely, facilitates optical measurement.Bracket base 211 is made up of high temperature resistant large density material, has the groove of suitable size, can be stuck in vertical for refractory ceramics table top 21 in groove.The shape of bracket base 211 can change according to the diameter of stove and environment, can to reach steadily place and facilitate laser to be incident to the object of sample central area by sample.
Temperature measurement unit comprises thermopair 31 and temperature transition gauge outfit 32, the measuring junction of thermopair 31 is placed in quartz ampoule 12 and is positioned near film sample 4, ensure that the accuracy of film sample 4 temperature in high temperature measurement, the cold junction of thermopair 31 is electrically connected to the corresponding electrode output of the second seal flange 14, the input end of temperature transition gauge outfit 32 is connected by the electrode output that wire is corresponding to the second seal flange 14, final realization is electrically connected with the cold junction of thermopair 31, and the output terminal of temperature transition gauge outfit 32 is connected to the communication port of computing machine 7.During work, measured the temperature of film sample 4 by thermopair 31, heat outputting electric potential signal, this thermoelectrical potential signal is connected with temperature transition gauge outfit 32 by the corresponding electrode output of the second seal flange 14 to be changed, connect with the communication port of computing machine 7, output film sample 4 real time temperature signal.The layout of thermopair 31 also can per sample test board 2 shape change and change, keep its measuring junction to be positioned near flat-temperature zone film sample 4.
Film surface reflective light intensity measuring unit comprises laser instrument 51, semi-transparent semi-reflecting prism 52, first condenser lens 53, transparent optical window 131, second condenser lens 54, optical filter 55 and Photoelectric Detection module 56.Laser instrument 51, semi-transparent semi-reflecting prism 52, first condenser lens 53 and transparent optical window 131 set gradually along input path, and transparent optical window 131, first condenser lens 53, semi-transparent semi-reflecting prism 52, second condenser lens 54, optical filter 55 and Photoelectric Detection module 56 set gradually along reflected light path.During work, laser is placed in the centre of surface region being placed in the film sample 4 on sample test platform 2 of stove flat-temperature zone through the vertical normal incidence of input path, the film sample 4 surface reflection light of returning arrives Photoelectric Detection module 56, and light signal is converted to the input port that electric signal sends into following data acquisition/control module 65 and carries out data acquisition process by computing machine 7 by Photoelectric Detection module 56.
In the present embodiment, laser instrument 51 adopts the helium-neon laser of high stability, improves measurement sensistivity; Semi-transparent semi-reflecting prism 52 is set between this laser instrument 51 and transparent optical window 131, the incidence of the laser on vertical incidence thin-film sample 4 surface and reflected light path can be separated, be convenient for measuring.Transparent optical window 131 can adopt two sides to be coated with optical anti-reflective film, suprasil window that expansion coefficient is little.Between semi-transparent semi-reflecting prism 52 and Photoelectric Detection module 56, be provided with narrow band pass filter 55, to get rid of other parasitic light, the impact of Photoelectric Detection module 56 disturbed, improve the signal to noise ratio (S/N ratio) that Photoelectric Detection module 56 outputs signal.First, second condenser lens 53,54 is respectively used to adjust the size and location of laser facula on film sample 4 surface and Photoelectric Detection module 56.Photoelectric Detection module 56 is conventional Photoelectric Detection module, selectable gain adjustable type.
Sheet resistance detecting unit adopts vanderburg method surface resistance measuring unit, and it comprises constant current source 61, nanovoltmeter 62, circuit switching control module and four metal probes 22.
As shown in Figure 3, circuit switching control module comprises probe input/output terminal change-over switch 63, current polarity change-over switch 64 and data acquisition/control module 65; Four metal probes 22 are electrically connected to the electrode output of the second seal flange 14 respectively by high temperature wire 3 correspondence, the port that the electrode output of the second seal flange 14 corresponds to four metal probes 22 is connected to the independent input output terminal of probe input/output terminal change-over switch 63, the output terminal of constant current source 61 is connected to the public input/output terminal of two-way of probe input/output terminal change-over switch 63 by current polarity change-over switch 64, the output terminal of constant current source 61 is also connected to computing machine 7.The public input/output terminal of other two-way of the input end linking probe input/output terminal change-over switch 63 of nanovoltmeter 62, the output terminal of nanovoltmeter 62 is connected to the communication port of computing machine 7; Data acquisition/control module 65 is connected with the PORT COM of computing machine 7, the signals collecting input end of the output terminal connection data collection/control module 65 of Photoelectric Detection module 56, the gating control end of data acquisition/control module 65 is connected respectively the control input end of control input end to probe input/output terminal change-over switch 63 and current polarity change-over switch 64.
During work, the circuit that probe input/output terminal change-over switch 63 is sent according to data acquisition/control module 56 switch gate control signal select adjacent in four metal probes 22 two as current probe, adjacent in addition two then as voltage probe; Data acquisition/control module 65 also controls current polarity change-over switch 64, changes the polarity that measuring current flows into and flows out metal probe 22.
In the present embodiment, control probe input/output terminal change-over switch 63 and current polarity change-over switch 64 by data acquisition/control module 65 to realize switching for eight times and measuring fast.Probe input/output terminal change-over switch 63 can select an analog switch to realize by two two four, and current polarity change-over switch 64 can be realized by a two-way double-throw analog switch.Two two four are selected an analog switch to be connected with the gating control end of data acquisition/control module 65 with the control input end of two-way double-throw analog switch, directly realize gating by data acquisition/control module 65 to control, realize switching and the measurement of probe input/output terminal change-over switch 63 and current polarity change-over switch 64.Data acquisition/control module 65 can be realized by a multi-channel data acquisition/control card, and alternative products is NI6008.Constant current source 61 Exemplary alternate product is Keithley 2400.Nanovoltmeter 62 Exemplary alternate product is Keithley 2182A.
Measuring process of the present utility model is as follows:
During test: first with tweezers, film sample 4 to be measured is placed on refractory ceramics table top 21, by the metal probe of four on refractory ceramics table top 21 22 and 4 four jiaos, metallic screw 23 fixed film sample.Be placed on the groove of bracket base 211 by having settled the sample test platform 2 of film sample 4, flat-temperature zone, stove middle part is put into from one end of quartz ampoule 12, first seal flange 13 and first seal flange 13 at fixing quartzy 12 two ends, ensures that whole stove (quartz ampoule 12) impermeability is good.The film sample 4 to be measured that is fixed forms electric path with the electrode output that metal probe 22, metallic screw 23, metal nuts 24 and high temperature wire 3 are connected on the second seal flange 14.Confirm that the second seal flange 14 extraction electrode contacts well with interconnector with universal electric meter, then the contact conductor of the second seal flange 14 is connected with temperature measurement unit with sheet resistance detecting unit.Start vacuum pump to vacuumize stove.As needs blanket gas, be then filled with from gas atmosphere inlet 16 when blanket gas reaches suitable pressure and stop inflation.Open LASER Light Source, adjustment light path, the laser that laser instrument 51 is sent by semi-transparent semi-reflecting prism 52 and transparent optical window 131 can normal incidence in film sample 4 centre of surface region to be measured, utilize the first condenser lens 53 to carry out film sample 4 surface laser spot size and regulate.The laser of returning from film sample 4 surface reflection enters photodetector unit module 56 by transparent optical window 131, first condenser lens 53, semi-transparent semi-reflecting prism 52, second condenser lens 54, narrow band pass filter 55 again.Start furnace power and temperature control heating program, automatically start to heat up after setting initial sum final temperature and the rate of heat addition, measure film sample 4 resistance value and reflective light intensity signal simultaneously.Data acquisition/control module 65 send gating signal control probe input/output terminal change-over switch 63 select adjacent in four metal probes 22 two as current probe, be connected with constant current source 61.Two metal probes 22 adjacent in addition, as voltage probe, measure potential difference (PD) therebetween by nanovoltmeter 62.At each temperature spot, realize eight Quick Measurements by procedure auto-control probe I/O end switch 63 and current polarity change-over switch 64.Detailed process is as follows: send that gating signal controls that two two four of probe I/O end switch 63 select that an analog switch realizes probe input by data acquisition/control module 65, output terminal switches and control, as shown in Figure 3, at metal probe 1., 2. between add steady current I (1. electric current flows to from probe, probe 2. flow out), measure metal probe 3., 4. between voltage V1; At metal probe 2., 3. between add steady current I, measure metal probe 1., 4. between voltage V2; At metal probe 3., 4. between add steady current I, measure metal probe 1., 2. between voltage V3; At metal probe 4., 1. between add steady current I, measure metal probe 2., 3. between voltage V4; Send gating signal control current polarity change-over switch 64 (dpdt double-pole double-throw (DPDT) analog switch) by data acquisition/control module 65 and realize current polarity switching, change electric current I flow into and flow out metal probe direction (as previous current 1. flow to from metal probe, 2. metal probe flow out, then now 2. electric current flows to from metal probe, 1. metal probe flow out.Otherwise then anti-), keep voltage probe sequence number constant, handover measurement obtains other four magnitude of voltage V5-V8 successively.The voltage that the resistance of tested film sample 4 can be measured with eight times is expressed as:
Wherein, the ratio of twice measuring voltage is designated as x, then vanderburg correction function f (x) is defined as
This resistance value R is then the final resistance value of the tested film sample 4 at this temperature.Meanwhile, at this temperature, the signal of Photoelectric Detection module 56 exports also by the data acquisition port processing of data acquisition/control module, transfers to computing machine 7 and process together with the temperature signal that thermopair 31 is measured.This data acquisition, control and processing procedure terminate program until temperature reaches setting final temperature.
As shown in Figure 4, be resistance and the synchronous change curve of reflective light intensity (sample temperature rise rate is 7.7 DEG C/min) of chalcogen phase-change thin film sample on the quartz substrate of use the utility model proving installation.
Claims (3)
1. a thin film high temperature photoelectricity physical property testing device, is characterized in that: comprise temperature controlled column tubular furnace, sample test platform, temperature measurement unit, film surface reflective light intensity measuring unit, sheet resistance detecting unit and computing machine;
Described temperature controlled column tubular furnace comprises program-controlled heating tubular furnace and the vacuum pump in order to vacuumize this program-controlled heating tubular furnace, this program-controlled heating tubular furnace comprises the program control type heating furnace body quartz ampoule opening-like with the two ends be placed in this program control type heating furnace body, the first end opening of this quartz ampoule is equiped with first seal flange with transparent optical window, and the second end opening of this quartz ampoule is equiped with second seal flange with electrode output;
Described sample test platform is placed in the flat-temperature zone in described quartz ampoule, described sample test platform is provided with four metal probes, film sample to be installed on sample test platform and measured surface towards the first end opening of described quartz ampoule, these four metal probes contact respectively with near the border, four angular regions of the measured surface of film sample;
Described temperature measurement unit comprises thermopair and temperature transition gauge outfit, the measuring junction of described thermopair is placed in described quartz ampoule and is positioned near described film sample, the cold junction of described thermopair is electrically connected to the electrode output of described second seal flange, and described temperature transition gauge outfit is electrically connected with the cold junction of described thermopair by the electrode output of described second seal flange;
Described film surface reflective light intensity measuring unit comprises laser instrument, semi-transparent semi-reflecting prism, the first condenser lens, described transparent optical window, the second condenser lens, optical filter and Photoelectric Detection module, described laser instrument, described semi-transparent semi-reflecting prism, described first condenser lens and described transparent optical windowsill input path set gradually, and described transparent optical window, described first condenser lens, described semi-transparent semi-reflecting prism, described second condenser lens, described optical filter and described Photoelectric Detection module set gradually along reflected light path;
Described sheet resistance detecting unit adopts vanderburg method surface resistance measuring unit, it comprises constant current source, nanovoltmeter, circuit switching control module and described four metal probes, and described circuit switches control module and comprises probe input/output terminal change-over switch, current polarity change-over switch and data acquisition/control module, described four metal probes are electrically connected to the electrode output of described second seal flange respectively by high temperature wire correspondence, the port that the electrode output of described second seal flange corresponds to described four metal probes is connected to the corresponding input/output terminal of described probe input/output terminal change-over switch, the output terminal of described constant current source is connected to the corresponding input/output terminal of described probe input/output terminal change-over switch by described current polarity change-over switch, the input end of described nanovoltmeter connects the corresponding input/output terminal of described probe input/output terminal change-over switch, the output terminal of described nanovoltmeter is connected to the respective input of described computing machine, described data acquisition/control module is connected with described computing machine, the output terminal of described Photoelectric Detection module connects the signals collecting input end of described data acquisition/control module, and the gating control end of described data acquisition/control module is connected respectively the control input end of control input end to described probe input/output terminal change-over switch and described current polarity change-over switch.
2. a kind of thin film high temperature photoelectricity physical property testing device according to claim 1, is characterized in that: described second seal flange adopts vacuum electrode flange.
3. a kind of thin film high temperature photoelectricity physical property testing device according to claim 1, it is characterized in that: described sample test platform has refractory ceramics table top, this refractory ceramics table top has four mounting holes, described four metal probes are respectively equipped with corresponding mounting hole, described four metal probes are arranged on this refractory ceramics table top respectively by metallic screw and metal nuts, and described four metal probes are electrically connected with described high temperature wire respectively by the metallic screw of correspondence and metal nuts; Described four metal probes pad the refractory ceramics pad being provided with to keep the measured surface of film sample and the Contact of corresponding metal probe good therewith respectively between refractory ceramics table top.
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- 2015-04-30 CN CN201520275129.3U patent/CN204594875U/en not_active Withdrawn - After Issue
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