CN202770798U - System for measuring heat conductivity coefficients of nanometer materials based on vanadium dioxide nano-wires - Google Patents
System for measuring heat conductivity coefficients of nanometer materials based on vanadium dioxide nano-wires Download PDFInfo
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- CN202770798U CN202770798U CN 201220458222 CN201220458222U CN202770798U CN 202770798 U CN202770798 U CN 202770798U CN 201220458222 CN201220458222 CN 201220458222 CN 201220458222 U CN201220458222 U CN 201220458222U CN 202770798 U CN202770798 U CN 202770798U
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Abstract
The utility model relates to a system for measuring heat conductivity coefficients of nanometer materials based on vanadium dioxide nano-wires. The system comprises a vanadium dioxide nano-wire cantilever beam, a laser heat source mechanism, an optical microscope mechanism and a vacuum pressure cavity mechanism. The laser heat source mechanism and the optical microscope mechanism are arranged on the outer portion of the vacuum pressure cavity mechanism. A silicon substrate is arranged on one side in a vacuum pressure cavity, one end of the vanadium dioxide nano-wire cantilever beam is connected with the silicon substrate, the other end is a cantilever end, and the vanadium dioxide nano-wire cantilever beam corresponds to a glass window at the top of the vacuum pressure cavity; the optical microscope mechanism is placed above the outer portion of the glass window; during measurements, one end of a nano-wire cantilever beam to be detected is connected with the silicon substrate and above the vanadium dioxide nano-wire cantilever beam; and the other end of the nano-wire cantilever beam to be measured is a cantilever beam to be connected with the cantilever end of the vanadium dioxide nano-wire cantilever beam. The system is used for relevant thermo-physical property measurement and low in cost, can prevent accelerated ageing on nano-wire surfaces and improves the measurement accuracy.
Description
Technical field
The utility model belongs to the functional material applied technical field, is specifically related to a kind of micro/nano material thermal conductivity measurement system based on the vanadium dioxide nanowire phase-change characteristic.
Background technology
At present, development along with technology such as micro-/ nano processing and analyses, research finds that the size effect of semiconductor material under the micro-/ nano yardstick, grain boundary effect etc. have brought special performance for it at aspects such as power, heat, light, electricity, magnetic, and produce thus micro/nano level electronic devices and components powerful, superior performance, so micro/nano material has huge application prospect.But along with the size of electronic component continues to be decreased to nanoscale, its heat generation density but continues to increase, and this has proposed challenge to the micro-/ nano device reliability.Therefore, in order to keep and improve the serviceability of this electronic component, the fundamental research of heat dissipation problem and associated hot mechanical analysis thereof becomes a vital problem under the micro-/ nano yardstick.
Because the restriction of yardstick, the measurement research of the thermal physical property parameters such as the coefficient of heat conductivity of micro/nano material is a generally acknowledged difficult problem always, especially also few to effective measurement means of single nano-wire/pipe thermal physical property parameter, can be divided into contact and contactless two classes: contact includes 3 ω methods, cycle heating, unsettled thermal conductivity method etc.; Contactless flicker method, photothermal reflectance method, the optoacoustic method of including.At present, these research methods have certain problem: as in the contact methods such as slope-3 ω method, electric leakage when microcircuit is aging between heating film and the substrate may cause the appearance of its nonlinear contact resistance, and then cause the failure of nano wire heat conducting coefficient experiments of measuring, and the requirement of well heater two ends isothermal has limited the usable range of the method; Also have, the non-contact methods such as flicker method based on the photothermal laser technology, generally can not directly test thermal conductivity but derive again this thermal conductivity coefficient after measuring thermal diffusion coefficient, cause accuracy of measurement results to descend, and the measurement range of these class methods also has larger restriction, is difficult to measure the coefficient of heat conductivity of nano wire.For above-mentioned reasons, although existing research was studied the thermal physical property parameters such as coefficient of heat conductivity of part nano wire with the Changing Pattern of temperature and diameter under the micro-/ nano yardstick, also lack the experimental study of its coefficient of heat conductivity with length variations.
The utility model content
In order to overcome the deficiencies in the prior art such as above-mentioned 3 ω methods, the utility model provides a kind of measuring system of the nano material coefficient of heat conductivity based on vanadium dioxide nanowire, this system is on the basis of the thermometry of vanadium dioxide nanowire phase-change characteristic, utilize the laser assisted optical microscopy that vanadium dioxide phase-change characteristic thermometry and the observation of laser assisted optical microphotograph are combined, both improve the measuring accuracy of temperature fluctuation on the nano wire, also solved the measurement problem of nano wire heat conducting coefficient under different pressure, temperature and nanowire diameter condition simultaneously.
Concrete technical solution is as follows:
Measuring system based on the nano material coefficient of heat conductivity of vanadium dioxide nanowire comprises vanadium dioxide nanowire semi-girder 12, LASER HEAT source mechanism 2, optical microscope mechanism 3 and vacuum pressure chamber mechanism 1; LASER HEAT source mechanism 2 and optical microscope mechanism 3 are positioned at vacuum pressure chamber mechanism 1 outside; Described vacuum pressure chamber mechanism 1 comprises the vacuum pressure cavity, and vacuum pressure cavity side is provided with the vacuum pressure chamber and imports and exports 14, and vacuum pressure cavity top is provided with glass window 15; Be provided with rectangle bearing table 10 in the described vacuum pressure cavity, the rectangle bearing table is provided with at the bottom of the silicon wafer-based 11; One end of described vanadium dioxide nanowire semi-girder 12 is being fixedly connected with at the bottom of the silicon wafer-based 11 by platinum film 13, the other end of vanadium dioxide nanowire semi-girder 12 is cantilever end, and vanadium dioxide nanowire semi-girder 12 is corresponding with the glass window 15 at vacuum pressure cavity top; Described optical microscope mechanism 3 is positioned at the top of described glass window 15 outsides; Optical microscope mechanism 3 is comprised of ccd image sensor 30, upper convex lens 31 and lower convex lens 32, and wherein ccd image sensor 30 is positioned at the top of convex lens 31, and lower convex lens 32 are corresponding with described glass window; Described LASER HEAT source mechanism 2 is comprised of the laser generator 20 that is arranged in order, half-wave plate 21, polarization beam apparatus 22, transmission-type phase grating 23, optical filter 24 and refracting telescope 25, described refracting telescope 25 between upper convex lens 31 and lower convex lens 32, and and lower convex lens 32 between be miter angle;
When measuring, an end of nano wire semi-girder 4 to be measured is being fixedly connected with at the bottom of the silicon wafer-based 11 by platinum film 13; The other end of nano wire semi-girder 4 to be measured is semi-girder, and is being fixedly connected with the cantilever end of vanadium dioxide nanowire semi-girder 12 by platinum film 13.
The length of described vanadium dioxide nanowire semi-girder 12 is 50-100 μ m, and the width of its square-section is 0.5-1 μ m, highly is 0.2-0.5 μ m, and it semiconductor can occur to the phase transformation of Metal Phase when being heated to 68 ℃ under unstress state.
The diameter of described nano wire semi-girder 4 to be measured is 1-1000nm, and length is 50-200 μ m.
On 11, distance is 10-20 μ m between vanadium dioxide nanowire semi-girder 12 and the nano wire semi-girder 4 to be measured at the bottom of the described silicon wafer-based.
The novel measuring technique that the utility model proposes is based on the contactless thermophysical property measurement method of vanadium dioxide phase transition property, overcome the difficult problem of the temperature Measurement accuracy under the micro-/ nano yardstick, avoided the complicated manufacturing process of microcircuit, reduced the aging experimental error of bringing of system line, verified the method can be effective to the surveying work of the convection transfer rate between the nanowire surface and air under the micro-/ nano linear content in past in the work in we.Vanadium dioxide is that phase transition temperature is near the phase-change material of room temperature, vanadium dioxide had carried out Metal Phase and semiconductor transformation mutually before and after its temperature caused phase transformation, and be accompanied by its surperficial dirty-green and jonquilleous change color, and its phase velocity can reach the nanosecond rank, so it is quite high as the sensitivity of temperature detection device; Both can solve a difficult problem of surveying small temperature fluctuation at the nano wire yardstick, can avoid again and make the experimental error that microcircuit brings, thereby improve the accuracy of experimental result, also can reduce in addition the cost of manufacture of crucial temperature element, and its phase transformation stability is also better, and term of life is longer.On the working foundation in this laboratory, we are applied to the indirect surveying work of single monocrystal nanowire coefficient of heat conductivity with this measuring method, thereby carry out the analysis and research of diabatic process mechanism principle.The Patents that similar nano wire heat conducting coefficient measuring method aspect is not yet arranged at present.
The utility model advantage compared with prior art is: adopt this measuring system to carry out the associated hot physical measurement, can avoid the making of micron order circuit arrangement, prevent that simultaneously accelerated deterioration from appearring in nanowire surface, and guaranteed the Measurement accuracy of temperature variation under the micro-/ nano yardstick, thereby improved the accuracy that the nano wire heat conducting coefficient is measured, more widened the measurement range of testing sample, can measure the cross-sectional diameter of sample at the nano wire of 1-1000nm scope, and this measurement is equally applicable to nanometer rods, nanotube, the thermal conductivity measurement of the multiple nano material such as nanobelt.The micro-/ nano line thermal conductivity measurement method that project proposes can be widened the hot physical basis research of material under the micro-/ nano yardstick on the one hand, and the thermophysical property measurement research that can be micro/nano material provides certain reference and reference; On the other hand, can be applicable to be used for improving the heat-sinking capability of micro/nano level electronic chip under the low pressure in the design of micro/nano level electronic chip, have important Research Significance and using value.
Description of drawings
The structural representation that Fig. 1 is the utility model under duty not.
Fig. 2 is the structural representation of the utility model under in working order.
Fig. 3 is the utility model lower time in working order, the interval theoretical model figure that distributes of heat flux distribution and vanadium dioxide nanowire semi-girder 12 Metal Phases in the system.
Sequence number among the upper figure: vacuum pressure chamber mechanism 1, LASER HEAT source mechanism 2, optical microscope mechanism 3, nano wire semi-girder 4 to be measured, rectangle bearing table 10, at the bottom of the silicon wafer-based 11, vanadium dioxide nanowire semi-girder 12, platinum film 13, the vacuum pressure chamber imports and exports 14, glass window 15, pressure transducer 16, pressure controller 17, laser generator 20, half-wave plate 21, polarization beam apparatus 22, transmission-type phase grating 23, optical filter 24, refracting telescope 25, ccd image sensor 30, upper convex lens 31, lower convex lens 32.
Embodiment
Below in conjunction with accompanying drawing, the utility model is further described by embodiment.
Embodiment
Referring to Fig. 1, a kind of micro/nano material thermal conductivity measurement system based on the vanadium dioxide nanowire phase-change characteristic comprises vacuum pressure chamber mechanism 1, LASER HEAT source mechanism 2, optical microscope mechanism 3, nano wire semi-girder 4 to be measured.Described vacuum pressure chamber mechanism 1 comprises the vacuum pressure cavity, and vacuum pressure cavity side is provided with the vacuum pressure chamber and imports and exports 14, and vacuum pressure cavity top is provided with glass window 15.Be provided with rectangle bearing table 10 in the vacuum pressure cavity.One end of vanadium dioxide nanowire semi-girder 12 is being fixedly connected with at the bottom of the silicon wafer-based 11 by platinum film 13, and the other end of vanadium dioxide nanowire semi-girder 12 is cantilever end, so this three has formed vanadium dioxide thermometric member.This vanadium dioxide thermometric member is imported and exported on the 14 rectangle bearing tables 10 that are placed in the vacuum pressure cavity by the vacuum pressure chamber, and wherein vanadium dioxide nanowire semi-girder 12 is corresponding with the glass window 15 at vacuum pressure cavity top.Pressure transducer 16 and pressure controller 17 place the vacuum pressure cavity outside, are respectively applied under the different pressure operating modes test and adjusting to vacuum pressure chamber internal pressure.Herein, vanadium dioxide thermometric member is with 0.5cm
211 are substrate at the bottom of the silicon wafer-based of size, and 11 have relatively large specific heat of combustion at the bottom of this silicon wafer-based, are well heat sink; And vanadium dioxide nanowire semi-girder 12 is synthetic by the vapor transmission method, and length is about 50-100 μ m, and width is about 0.5-1 μ m; Vanadium dioxide nanowire semi-girder 12 is by being fixed on platinum film 13 at the bottom of the silicon wafer-based on 11, to guarantee that the thermal resistance between 11 is less at the bottom of vanadium dioxide nanowire semi-girder 12 and the silicon wafer-based.And the vacuum chamber body wall is made by light-proof material.
Before the measurement of carrying out various nano wire heat conducting coefficients, use first the tungsten pin nano wire semi-girder 4 to be measured to be transferred at the bottom of the silicon wafer-based 11 edge, and with platinum film 13 end of nano wire semi-girder 4 to be measured is being fixedly connected with at the bottom of the silicon wafer-based 11 by focused ion beam method (FIB), again with the other end of nano wire semi-girder 4 to be measured, it is cantilever end, be fixedly connected with the cantilever end of vanadium dioxide nanowire semi-girder 12 with platinum film 13, as shown in Figure 2, to guarantee that nano wire semi-girder to be measured 4 is with at the bottom of the silicon wafer-based 11, thermal resistance between the vanadium dioxide nanowire semi-girder 12 is less.The linear measure longimetry scope of this nano wire semi-girder 4 to be measured is about 50-200 μ m, and the diameter measurement scope is about 1-1000nm.
Described LASER HEAT source mechanism 2 is comprised of the laser generator 20 that is arranged in order, half-wave plate 21, polarization beam apparatus 22, transmission-type phase grating 23, optical filter 24 and refracting telescope 25, described refracting telescope 25 between upper convex lens 31 and lower convex lens 32, and and lower convex lens 32 between be miter angle.The laser frequency that laser generator 20 provides is 533Hz, and the maximum laser energy is 330mW, and this laser projection is adjusted to different laser intensities by adjusting optical filter 24 to optical filter 24
Q, pass through successively again refracting telescope 25, glass window 15, be incident upon on the nano wire semi-girder 4 to be measured, see Fig. 2; This laser projection has formed the hot spot that diameter is about 1-2 μ m after on nano wire semi-girder 4 to be measured, can be used for identifying laser projection point position, namely
L 1 By the control function of laser generator 20, can accurately handle laser projection point position
L 1 Little about 20 μ m of scope that move.Semiconductor-the metal phase change of described vanadium dioxide nanowire semi-girder 12 can be finished within nanosecond, therefore with respect to interaction time of electronics and phonon, and psec, this measuring process can be seen as the quasi-equilibrium state process.
Optical microscope mechanism 3 is positioned at the top of glass window 15 outsides; Optical microscope mechanism 3 is comprised of ccd image sensor 30, upper convex lens 31 and lower convex lens 32, and wherein ccd image sensor 30 is positioned at the top of convex lens 31, and lower convex lens 32 are corresponding with glass window; The enlargement factor of this optical microscope mechanism 3 is 20,50 and 100, its work visual field such as Fig. 1, and shown in 2, and can be for the launching position of laser on nano wire semi-girder 4 to be measured
L 1 Carry out rough adjustment, so that launching position after cooperating
L 1 Fine setting.
Finish after the experiment test, set up mathematical model, suppose certain pressure
PCertain temperature
T a The coefficient of heat conductivity of lower nano wire semi-girder 4 to be measured
k, respectively organize laser intensity corresponding to experiment condition
QAnd launching position
L 1 , obtain the theoretical value of vanadium dioxide nanowire semi-girder 12 metal phase change burst lengths under this operating mode; Under the assumed conditions of different k, corresponding to each experiment condition (
Q, L 1 ), calculate the theoretical value of this metal phase change burst length, and the experiment value corresponding with it compares respectively; Each is given
kIn the situation, to each experiment condition (
Q, L 1 ) under error superpose, obtain total error (with
kRelevant
), when this total difference hour, be back-calculated to obtain so that the coefficient of heat conductivity assumed value of theoretical value and laboratory deviation minimum
k s , i.e. the actual value of nano wire semi-girder 4 coefficient of heat conductivity to be measured under this pressure, the temperature.
Concrete operation logic of the present utility model is as follows:
1. under the room temperature
T a , when regulating pressure to predetermined value by pressure controller 17
PThe time, by adjusting LASER HEAT source mechanism 2 incident laser is adjusted to certain laser intensity
Q, allow laser project on the nano wire semi-girder 4 to be measured through glass window 15, and utilize the formed hot spot of laser, record position, incident point
L 1 And laser intensity
QAt this moment, this incident laser heat of offering nano wire semi-girder 4 to be measured transmits a part of heat take the incident point as initial point to nano wire semi-girder to be measured 4 both sides
q 1 To through an effluent of nano wire semi-girder 4 to be measured at the bottom of the silicon wafer-based 11, cause that the temperature of nano wire semi-girder 4 to be measured rises; All the other heats
q 2 Then pass through successively opposite side and the vanadium dioxide nanowire semi-girder 12 of nano wire semi-girder 4 to be measured, flow to again at the bottom of the silicon wafer-based 11, the temperature that has caused nano wire semi-girder 4 to be measured and vanadium dioxide nanowire semi-girder 12 rises, here most of heat all be mode by conduction heat transfer and convection heat transfer' heat-transfer by convection be dissipated to respectively at the bottom of the silicon wafer-based 11 and air in;
2. observe by optical microscope mechanism 3, when the temperature that has partial section on the vanadium dioxide nanowire semi-girder 12 surpasses 68 ℃, semiconductor-metal phase change occurs in this interval, and become dirty-green by glassy yellow, other partial sections of vanadium dioxide nanowire semi-girder 12 still keep glassy yellow simultaneously, such as Fig. 2, shown in 3; So record under this experiment condition (
P, L 1 ,
Q) experiment value of metal phase change burst length
L m
3. change launching position
L 1 , also again by using 24 pairs of laser intensities of optical filter
Q=n*Q 0 Adjust (
nBe the number percent that filters), namely change n, repeating step 1 and 2 obtains under the corresponding operating mode
L Mi , wherein
I=1,2 ... m(m is the operating mode sum);
4. in conjunction with the heat transfer model of setting up, the coefficient of heat conductivity of supposing nano wire semi-girder 4 to be measured under the room temperature is known constant
k, and be good heat sink at the bottom of the silicon wafer-based, its temperature
T s All the time with room temperature
T a Be consistent, can calculate in theory Temperature Distribution on the nano wire semi-girder 4 to be measured and vanadium dioxide nanowire semi-girder 12
TAbout launching position
L 1 , laser intensity
QAnd coefficient of heat conductivity
kFunction
T(
L 1 ,
Q, k), and then obtain the theoretical value of metal phase change burst length on the vanadium dioxide nanowire semi-girder 12
L Mi 'About
L 1 ,
QWith
kFunction;
The different working conditions of this correspondence (
L 1 ,
Q) and suppose and calculate the theoretical value of this metal phase change burst length on the vanadium dioxide nanowire semi-girder 12 in the situation of thermal conductivity coefficient k
L Mi 'With experiment value
L Mi Error △
i=
L Mi -
L Mi ',
I=1,2 ... m, and superposition calculation should the supposition thermal conductivity coefficient
kLower total error ∑ △
i
6. maintenance pressure
PConstant, change many group supposition thermal conductivity coefficients
k, and repeating step 1-5 calculates the minimal value of this total difference by programming, obtains so that the total error ∑ △ of different operating modes
iHour
k p , be the true thermal conductivity coefficient of this nano wire semi-girder 4 to be measured under this pressure;
7. adjust and measurement environment pressure by pressure controller 17 and pressure transducer 16 again
PUnder each environment temperature, (be no more than 68 ℃) for the nano wire semi-girder 4 to be measured of different-diameter, utilize this system under different experimental conditions (pressure, temperature, diameter), different micro-/ nano line coefficient of heat conductivity to be measured research, can obtain the coefficient of heat conductivity of micro-/ nano line with the Changing Pattern of pressure, temperature, diameter, and summarizes obtains pressure, temperature, scale effect to the impact of micro-/ nano line heat-transfer capability, for research micro-/ nano line heat-transfer mechanism and possible hot physical property scale effect thereof are carried out place mat.
Claims (4)
1. based on the measuring system of the nano material coefficient of heat conductivity of vanadium dioxide nanowire, it is characterized in that: comprise vanadium dioxide nanowire semi-girder (12), LASER HEAT source mechanism (2), optical microscope mechanism (3) and vacuum pressure chamber mechanism (1); LASER HEAT source mechanism (2) and optical microscope mechanism (3) are positioned at vacuum pressure chamber mechanism (1) outside; Described vacuum pressure chamber mechanism (1) comprises the vacuum pressure cavity, and vacuum pressure cavity side is provided with the vacuum pressure chamber and imports and exports (14), and vacuum pressure cavity top is provided with glass window (15); Be provided with rectangle bearing table (10) in the described vacuum pressure cavity, the rectangle bearing table is provided with (11) at the bottom of the silicon wafer-based; One end of described vanadium dioxide nanowire semi-girder (12) is being fixedly connected with (11) at the bottom of the silicon wafer-based by platinum film (13), the other end of vanadium dioxide nanowire semi-girder (12) is cantilever end, and vanadium dioxide nanowire semi-girder (12) is corresponding with the glass window (15) at vacuum pressure cavity top; Described optical microscope mechanism (3) is positioned at the outside top of described glass window (15); Optical microscope mechanism (3) is comprised of ccd image sensor (30), upper convex lens (31) and lower convex lens (32), and wherein ccd image sensor (30) is positioned at the top of convex lens (31), and lower convex lens (32) are corresponding with described glass window; Described LASER HEAT source mechanism (2) is comprised of the laser generator that is arranged in order (20), half-wave plate (21), polarization beam apparatus (22), transmission-type phase grating (23), optical filter (24) and refracting telescope (25), described refracting telescope (25) is positioned between convex lens (31) and the lower convex lens (32), and and lower convex lens (32) between be miter angle;
When measuring, an end of nano wire semi-girder to be measured (4) is being fixedly connected with (11) at the bottom of the silicon wafer-based by platinum film (13); The other end of nano wire semi-girder to be measured (4) is semi-girder, and is being fixedly connected with the cantilever end of vanadium dioxide nanowire semi-girder (12) by platinum film (13).
2. the measuring system of the nano material coefficient of heat conductivity based on vanadium dioxide nanowire according to claim 1, it is characterized in that: the length of described vanadium dioxide nanowire semi-girder (12) is 50-100 μ m, the width of its square-section is 0.5-1 μ m, highly be 0.2-0.5 μ m, semiconductor can occur to the phase transformation of Metal Phase when being heated to 68 ℃ under unstress state in it.
3. the measuring system of the nano material coefficient of heat conductivity based on vanadium dioxide nanowire according to claim 1, it is characterized in that: the diameter of described nano wire semi-girder to be measured (4) is 1-1000nm, length is 50-200 μ m.
4. the measuring system of the nano material coefficient of heat conductivity based on vanadium dioxide nanowire according to claim 1, it is characterized in that: on (11), distance is 10-20 μ m between vanadium dioxide nanowire semi-girder (12) and the nano wire semi-girder to be measured (4) at the bottom of the described silicon wafer-based.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220458222 CN202770798U (en) | 2012-09-11 | 2012-09-11 | System for measuring heat conductivity coefficients of nanometer materials based on vanadium dioxide nano-wires |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201220458222 CN202770798U (en) | 2012-09-11 | 2012-09-11 | System for measuring heat conductivity coefficients of nanometer materials based on vanadium dioxide nano-wires |
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| CN202770798U true CN202770798U (en) | 2013-03-06 |
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| CN 201220458222 Expired - Lifetime CN202770798U (en) | 2012-09-11 | 2012-09-11 | System for measuring heat conductivity coefficients of nanometer materials based on vanadium dioxide nano-wires |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102818820A (en) * | 2012-09-11 | 2012-12-12 | 中国科学技术大学 | System for measuring heat conductivity coefficient of nano materials based on vanadium dioxide nano wires |
| CN103234804A (en) * | 2013-04-25 | 2013-08-07 | 哈尔滨工业大学 | High-power non-contact type rapid laser heating device |
-
2012
- 2012-09-11 CN CN 201220458222 patent/CN202770798U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102818820A (en) * | 2012-09-11 | 2012-12-12 | 中国科学技术大学 | System for measuring heat conductivity coefficient of nano materials based on vanadium dioxide nano wires |
| CN102818820B (en) * | 2012-09-11 | 2014-07-23 | 中国科学技术大学 | System for measuring heat conductivity coefficient of nano materials based on vanadium dioxide nano wires |
| CN103234804A (en) * | 2013-04-25 | 2013-08-07 | 哈尔滨工业大学 | High-power non-contact type rapid laser heating device |
| CN103234804B (en) * | 2013-04-25 | 2014-06-18 | 哈尔滨工业大学 | High-power non-contact type rapid laser heating device |
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Granted publication date: 20130306 Effective date of abandoning: 20140723 |
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