CN102607701B - Fourier transformation miniature spectrometer based on moving mirror of micro-electro-mechanical system - Google Patents

Fourier transformation miniature spectrometer based on moving mirror of micro-electro-mechanical system Download PDF

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CN102607701B
CN102607701B CN201210065850.0A CN201210065850A CN102607701B CN 102607701 B CN102607701 B CN 102607701B CN 201210065850 A CN201210065850 A CN 201210065850A CN 102607701 B CN102607701 B CN 102607701B
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spectroscope
micro
light
mems
index glass
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CN102607701A (en
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陈巧
谢会开
周亮
严冬梅
管帅
傅霖来
兰树明
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Wuxi Weiwen Semiconductor Technology Co ltd
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WUXI WIO TECHNOLOGY Co Ltd
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Abstract

The invention relates to a Fourier transformation miniature spectrometer based on a moving mirror of a micro-electro-mechanical system, which comprises a Michelson interferometer, a signal acquisition processor and a photoelectric detector. The Michelson interferometer comprises a light source, a first spectroscope, a second spectroscope, an MEMS (micro-electro-mechanical system) micromirror and a static mirror which are connected to scan samples. The Fourier transformation miniature spectrometer based on the moving mirror of the micro-electro-mechanical system realizes structural microminiaturization, portability of equipment is improved, linear movement of the MEMS micromirror can be guaranteed, and cost of the total equipment is reduced.

Description

A kind of Fourier transform low-light spectrometer based on MEMS (micro electro mechanical system) index glass
Technical field
The present invention relates to a kind of Fourier transform low-light spectrometer based on MEMS (micro electro mechanical system) index glass.
Background technology
Spectrometer is by the development to the crawl of optical information, photographic negative, or computerized demonstration and the analysis that automatically shows numerical value instrument, thereby predict in article, contain which kind of element, this technology is widely used in the middle of the detections such as air pollution, water pollution, food hygiene, metal industry.
Fourier transform type spectrometer is mainly comprised of light source, Michelson interferometer and detecting device at present.And the core of Fourier transform infrared spectrometer is Michelson interferometer, sample is placed on before detecting device, because sample produces and absorbs the infrared light of some frequency, the interference light intensity that detecting device receives is changed, thereby obtain the interferogram of various different samples.This interferogram is the change curve that light produces along with the displacement of index glass, can obtain the frequency domain figure of light intensity frequency change by Fourier transform function, and this process can be completed by computing machine.But owing to relating to index glass in this design or being called linear moving table, it mainly relies on stepper motor or other precision mechanical system, so the portability of instrument is restricted, cannot realize outdoor real-time detection, so the miniaturization of index glass is the key that solves the miniaturization of Fourier transform spectrometer.
A brand-new technical field and industry have been opened up in the development of MEMS (micro electro mechanical system) (MEMS) technology, and the microsensor, microactrator, micro parts, Micromechanical Optics device, vacuum microelectronic device, power electronic devices etc. that adopt MEMS fabrication techniques have very wide application prospect in Aeronautics and Astronautics, automobile, biomedicine, environmental monitoring, military affairs and all spectra that almost people touch.Micro-electromechanical system (MEMS) (Micro-Electro-Mechanical Systems) is a kind of brand-new research and development field that must simultaneously consider multiple physical field immixture, with respect to traditional machinery, their size is less, and maximum is no more than one centimetre, is even only several microns.Adopt and the similar generation technique of integrated circuit, can utilize in a large number mature technology and technique in integrated circuit production, carry out in enormous quantities, produce at low cost, cost performance is increased substantially with respect to tradition " machinery " manufacturing technology.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of miniaturization that can be good at, and can guarantee the linearly moving Fourier transform low-light spectrometer based on MEMS (micro electro mechanical system) index glass of index glass.
The present invention is in order to solve the problems of the technologies described above by the following technical solutions: the present invention has designed a kind of Fourier transform low-light spectrometer based on MEMS (micro electro mechanical system) index glass, comprises Michelson interferometer, signal acquisition process device and photodetector; Michelson interferometer comprises light source, the first spectroscope, the second spectroscope, index glass and quiet mirror, the light beam that wherein light source penetrates is mapped on sample by the first spectroscope, light beam through sample reflection is mapped on the second spectroscope through the first spectroscope, the second spectroscope is divided into two-way by light beam, one tunnel is mapped on quiet minute surface, one tunnel is mapped on index glass face, and the two-beam after quiet mirror, index glass reflection converges formation michelson interferometer optical path at the second spectroscope place; Michelson interferometer optical path signal is mapped on photodetector, photodetector is converted into electric signal by light signal and is delivered in signal acquisition process device, by Fourier transform, the spectrum that comprises sample message is restored, analyze spectrum and obtain sample message, simultaneously, the output terminal of signal acquisition process device is connected with the control end of index glass, and described index glass is MEMS micro mirror.
As a preferred technical solution of the present invention: described MEMS micro mirror is MEMS electrothermal drive micro mirror.
As a preferred technical solution of the present invention: also comprise photoelectric position detector and the 3rd spectroscope, Michelson's optical interference circuit that described Michelson steller interferometer penetrates is mapped on the 3rd spectroscope, the 3rd spectroscope is divided into two-way by michelson interferometer optical path, the interference light signal that one tunnel comprises sample message is mapped on photodetector, the light path that another road comprises MEMS micromirror movements information is mapped on photoelectric position detector, photoelectric position detector is converted into electric signal transmission to signal acquisition process device by light signal, signal acquisition process device carries out Linear-moving according to the signal controlling MEMS micro mirror receiving.
As a preferred technical solution of the present invention: described the 3rd spectroscope is bi-color branch light microscopic.
As a preferred technical solution of the present invention: described photoelectric position detector is four-quadrant photoelectric position detector.
As a preferred technical solution of the present invention: also comprise micro-optic pedestal, described Michelson interferometer, signal acquisition process device, photodetector, photoelectric position detector and the 3rd spectroscope are arranged on micro-optic pedestal.
As a preferred technical solution of the present invention: the substrate of described micro-optic pedestal is monocrystalline silicon piece.
As a preferred technical solution of the present invention: the substrate of described micro-optic pedestal is soi wafer, and wherein SOI silicon chip comprises two-layer silicon and layer of silicon dioxide, and silicon dioxide is clipped between two-layer silicon.
As a preferred technical solution of the present invention: described micro-optic pedestal adopts following processing technology to obtain:
(1) soi wafer is carried out to two-sided standard cleaning;
(2) at soi wafer, wherein on a surface, precipitate layer of metal;
(3) whirl coating, exposure, development are carried out in the surface of the metal level on soi wafer;
(4) to metal level corrosion, gone between, and removed photoresist;
(5) the place face that goes between on soi wafer is carried out to whirl coating, exposure, development;
(6) adopt dry etching technology etching mounting groove, until etch into silicon dioxide layer, and remove photoresist.
A kind of Fourier transform low-light spectrometer based on MEMS (micro electro mechanical system) index glass of the present invention adopts above technical scheme compared with prior art, has following technique effect:
(1) adopt the design of micro-optic pedestal, make in equipment optical component setting compacter, realized the microminiaturization of structure, improved the pocket of equipment;
(2) utilize MEMS micro mirror and FEEDBACK CONTROL, guaranteed the Linear-moving of MEMS micro mirror;
(3) MEMS micro mirror utilizes semiconductor technology batch production, and individual devices cost is low, and then has reduced the cost of whole equipment.
Accompanying drawing explanation
Fig. 1 is flow chart of data processing figure of the present invention;
Fig. 2 is three-dimensional plot of the present invention;
Fig. 3 is the schematic diagram of MEMS electrothermal drive micro mirror in the present invention;
Fig. 4 is the schematic diagram of step (1) in micro-optic pedestal processing technology in the present invention;
Fig. 5 is the schematic diagram of step (2) in micro-optic pedestal processing technology in the present invention;
Fig. 6 is the schematic diagram of step (3) in micro-optic pedestal processing technology in the present invention;
Fig. 7 is the schematic diagram of step (4) in micro-optic pedestal processing technology in the present invention;
Fig. 8 is the schematic diagram of step (5) in micro-optic pedestal processing technology in the present invention;
Fig. 9 is the schematic diagram of step (6) in micro-optic pedestal processing technology in the present invention;
1. light source, 2. the first spectroscope, 3. sample, 4. the second spectroscope, 5. the 3rd spectroscope, 6.MEMS electrothermal drive micro mirror, 7. quiet mirror, 8. photodetector, 9. photoelectric position detector, 10. micro-optic pedestal, 11. sway braces, 12. actuating arms, 13. minute surfaces, 14. silicon layers, 15. silicon dioxide layers, 16. metal levels, 17. lead-in wires, 18. mounting grooves, 19. photoresists, 20. signal acquisition process devices.
Embodiment
Below in conjunction with Figure of description, the specific embodiment of the present invention is described in further detail.
As depicted in figs. 1 and 2, the present invention has designed a kind of Fourier transform low-light spectrometer based on MEMS (micro electro mechanical system) index glass, comprises Michelson interferometer, signal acquisition process device and photodetector; Michelson interferometer comprises light source, the first spectroscope, the second spectroscope, index glass and quiet mirror, the light beam that wherein light source penetrates is mapped on sample by the first spectroscope, light beam through sample reflection is mapped on the second spectroscope through the first spectroscope, the second spectroscope is divided into two-way by light beam, one tunnel is mapped on quiet minute surface, one tunnel is mapped on index glass face, and the two-beam after quiet mirror, index glass reflection converges formation michelson interferometer optical path at the second spectroscope place; Michelson interferometer optical path signal is mapped on photodetector, photodetector is converted into electric signal by light signal and is delivered in signal acquisition process device, by Fourier transform, the spectrum that comprises sample message is restored, analyze spectrum and obtain sample message, simultaneously, the output terminal of signal acquisition process device is connected with the control end of index glass, and described index glass is MEMS micro mirror.
The type of drive of MEMS micro mirror has electrothermal drive mode and static type of drive etc., as a preferred technical solution of the present invention: described MEMS micro mirror has adopted MEMS electrothermal drive micro mirror, wherein, foreign patent [WO2004US13171; WO2004099629A2] a kind of MEMS electrothermal drive micro mirror is disclosed, as shown in Figure 3, by a minute surface and four MEMS (micro electro mechanical system) that actuating arm forms, wherein actuating arm is symmetrical, and each actuating arm consists of multilayer material.In actuating arm, comprise heating, applying electric current raises actuating arm temperature, then utilize the thermal expansion difference of double layer material to cause out-of-plane motion, thereby promote minute surface motion, if four actuating arms apply same electric current, just can promote the motion of minute surface Z-direction, coordinate feedback controling mode to realize the Linear-moving of index glass.
As a preferred technical solution of the present invention: also comprise photoelectric position detector and the 3rd spectroscope, Michelson's optical interference circuit that described Michelson steller interferometer penetrates is mapped on the 3rd spectroscope, the 3rd spectroscope is divided into two-way by michelson interferometer optical path, the interference light signal that one tunnel comprises sample message is mapped on photodetector, the light path that another road comprises MEMS micromirror movements information is mapped on photoelectric position detector, photoelectric position detector is converted into electric signal transmission to signal acquisition process device by light signal, signal acquisition process device carries out Linear-moving according to the signal controlling MEMS micro mirror receiving.
As a preferred technical solution of the present invention: described the 3rd spectroscope is bi-color branch light microscopic, and it can be separated into two-way by light source light and flashlight.
As a preferred technical solution of the present invention: described photoelectric position detector is four-quadrant photoelectric position detector, four-quadrant photoelectric position detector is actually by four photoelectric position detectors and forms, quadrant of each detector, target light signal is imaging on four-quadrant photo detector after optical system.Four-quadrant photo detector angle measurement and location technology are utilized four rational layouts of photodetector, construct spot size with target-angle variation relation, thereby reach the measurement for angle.Four-quadrant photo detector is placed in optical system focal plane or slightly leaves focal plane.When target imaging is not on optical axis, on four quadrants, the photosignal amplitude of detector output is not identical.By comparing the amplitude size of four photosignals, not only can know target imaging is on which quadrant, and can extrapolate the incident angle of light beam.
As a preferred technical solution of the present invention: also comprise micro-optic pedestal, described Michelson interferometer, signal acquisition process device, photodetector, photoelectric position detector and the 3rd spectroscope are arranged on micro-optic pedestal.
As a preferred technical solution of the present invention: the substrate of described micro-optic pedestal is monocrystalline silicon piece.
As a preferred technical solution of the present invention: the substrate of described micro-optic pedestal is soi wafer, and wherein SOI silicon chip comprises two-layer silicon and layer of silicon dioxide, and silicon dioxide is clipped between two-layer silicon.
As a preferred technical solution of the present invention: described micro-optic pedestal adopts following processing technology to obtain:
(1) as shown in Figure 4, soi wafer is carried out to two-sided standard cleaning;
(2) as shown in Figure 5, at soi wafer, wherein on a surface, precipitate layer of metal;
(3) as shown in Figure 6, whirl coating, exposure, development are carried out in the surface of the metal level on soi wafer;
(4) as shown in Figure 7,, to metal level corrosion, gone between, and removed photoresist;
(5) as shown in Figure 8, the place face that goes between on soi wafer is carried out to whirl coating, exposure, development;
(6) as shown in Figure 9, adopt dry etching technology etching mounting groove, until etch into silicon dioxide layer, and remove photoresist.
By reference to the accompanying drawings embodiments of the present invention are explained in detail above, but the present invention is not limited to above-mentioned embodiment, in the ken possessing those of ordinary skills, can also under the prerequisite that does not depart from aim of the present invention, makes a variety of changes.

Claims (6)

1. the Fourier transform low-light spectrometer based on MEMS (micro electro mechanical system) index glass, comprises Michelson interferometer, signal acquisition process device and photodetector, Michelson interferometer comprises light source, the first spectroscope, the second spectroscope, index glass and quiet mirror, the light beam that light source penetrates is separated into two light beams through the first spectroscope, wherein light beam beam is to testee, light beam through testee reflection merges on directive the second spectroscope with other a branch of light beam after the first spectroscope, the second spectroscope is divided into two-way by light beam, one tunnel is mapped on quiet minute surface, one tunnel is mapped on index glass face, and the two-beam after quiet mirror, index glass reflection converges formation michelson interferometer optical path at the second spectroscope place, michelson interferometer optical path signal is mapped on photodetector, photodetector is converted into electric signal by light signal and is delivered in signal acquisition process device, by Fourier transform, the spectrum that comprises sample message is restored, analyze spectrum and obtain sample message, simultaneously, the output terminal of signal acquisition process device is connected with the control end of index glass, it is characterized in that: described index glass is MEMS electrothermal drive micro mirror, also comprise photoelectric position detector and the 3rd spectroscope, Michelson's optical interference circuit that described Michelson steller interferometer penetrates is mapped on the 3rd spectroscope, the 3rd spectroscope is divided into two-way by michelson interferometer optical path, the interference light signal that one tunnel comprises sample message is mapped on photodetector, the light path that another road comprises MEMS micromirror movements information is mapped on photoelectric position detector, photoelectric position detector is converted into electric signal transmission to signal acquisition process device by light signal, signal acquisition process device carries out Linear-moving according to the signal controlling MEMS micro mirror receiving, described photoelectric position detector is four-quadrant photoelectric position detector.
2. a kind of Fourier transform low-light spectrometer based on MEMS (micro electro mechanical system) index glass according to claim 1, is characterized in that: described the 3rd spectroscope is bi-color branch light microscopic.
3. a kind of Fourier transform low-light spectrometer based on MEMS (micro electro mechanical system) index glass according to claim 1, it is characterized in that: also comprise micro-optic pedestal, described Michelson interferometer, signal acquisition process device, photodetector, photoelectric position detector and the 3rd spectroscope are arranged on micro-optic pedestal.
4. a kind of Fourier transform low-light spectrometer based on MEMS (micro electro mechanical system) index glass according to claim 3, is characterized in that: the substrate of described micro-optic pedestal is monocrystalline silicon piece.
5. a kind of Fourier transform low-light spectrometer based on MEMS (micro electro mechanical system) index glass according to claim 3, it is characterized in that: the substrate of described micro-optic pedestal is soi wafer, wherein SOI silicon chip comprises two-layer silicon and layer of silicon dioxide, and silicon dioxide is clipped between two-layer silicon.
6. a kind of Fourier transform low-light spectrometer based on MEMS (micro electro mechanical system) index glass according to claim 5, is characterized in that: described micro-optic pedestal adopts following processing technology to obtain:
(1) soi wafer is carried out to two-sided standard cleaning;
(2) at soi wafer, wherein on a surface, precipitate layer of metal;
(3) whirl coating, exposure, development are carried out in the surface of the metal level on soi wafer;
(4) to metal level corrosion, gone between, and removed photoresist;
(5) the place face that goes between on soi wafer is carried out to whirl coating, exposure, development;
(6) adopt dry etching technology etching mounting groove, until etch into silicon dioxide layer, and remove photoresist.
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