CN110863185B - 一种低反射高透射膜及其制备方法 - Google Patents

一种低反射高透射膜及其制备方法 Download PDF

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CN110863185B
CN110863185B CN201911244787.5A CN201911244787A CN110863185B CN 110863185 B CN110863185 B CN 110863185B CN 201911244787 A CN201911244787 A CN 201911244787A CN 110863185 B CN110863185 B CN 110863185B
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film
niobium
sputtering
ito
thickness
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夏伟
张兵
郑建军
张成金
姚仕军
方添志
赵帅
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Tianjin Amtech Vacuum Technology Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering

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Abstract

本发明提供了一种低反射高透射膜，包括在玻璃基板上依次层叠的含铌底膜和ITO膜，所述含铌底膜为2‑3层，含铌底膜和ITO膜的厚度之和小于

Description

一种低反射高透射膜及其制备方法
技术领域
本发明涉及薄膜技术领域，尤其是涉及一种低反射高透射膜及其制备方法。
背景技术
随着各种新技术新产品的不断涌现，我们对产品的功效性能要求也越来越高。例如汽车，随着车载信息与娱乐设备的水平不断提高，车载显示屏的种类和数量逐渐增加，如今它已不再是单纯的移动工具，而是正在向“为用户提供有价值的时间和空间”方向转变。
车载显示屏，是汽车十分重要的装置配件。目前，大部分车都配备了车载显示屏，甚至有的车汽车仪表也使用显示屏的数字式仪表，而且与模拟式相比，目前的数字式仪表设计更加灵活，可以在仪表画面同时显示地图、车辆等信息，可用性更高。由于显示屏的特点，应该使用能见度较高的显示屏，以便在强太阳光下也能看到清晰的画面。而目前现有的显示屏在强光下看的不够清楚，影响驾驶人员的正常驾驶。
发明内容
有鉴于此，本发明旨在提出一种低反射高透射膜，镀在显示屏玻璃上能够实现低反射、高透射的效果，使屏幕在强光下更清晰。
为达到上述目的，本发明的技术方案是这样实现的：
一种低反射高透射膜，包括在玻璃基板上依次层叠的含铌底膜和ITO膜，所述含铌底膜为2-3层，含铌底膜和ITO膜的厚度之和小于
进一步，所述含铌底膜为3层，在玻璃基板上依次层叠为五氧化二铌膜、氮化铌膜和金属铌膜。
进一步，所述五氧化二铌膜的厚度为所述氮化铌膜的厚度为/>所述金属铌膜的厚度为/>
进一步，所述金属铌膜中铌的纯度为99.95％。
进一步，所述ITO膜的厚度为
本发明还提供了一种上述的低反射高透射膜的制备方法，该方法包括如下步骤：
采用磁控溅射工艺，在玻璃基板上依次溅射含铌材料和ITO材料，形成含铌底膜和ITO膜，工作气体为氩气，工作压强为0.7-1.2Pa。
进一步，所述氩气的浓度为99.99％。
进一步，所述含铌底膜的溅射功率为60-120W，溅射距离为5-8cm，溅射时间为10-15min，溅射方式为直流溅射。
进一步，所述ITO膜的溅射功率为80-150W，溅射距离为6-10cm，溅射时间为15-20min，溅射方式为射频溅射。
相对于现有技术，本发明所述的低反射高透射膜具有以下优势：
(1)本发明所述的低反射高透射膜的反射率在5％以下，透射率在98％以上，该低反射高透射膜能够降低环境光的干扰，提高画面的清晰度和能度，减少屏幕反光，减少人眼疲劳，使图像更清晰、逼真。
(2)本发明所述的低反射高透射膜采用2-3层含铌底膜，大幅增加了光的透射率，是屏幕更清晰。
(3)本发明所述的含铌底膜溅射方式为直流溅射，直流磁控溅射的特点是在阳极基片和阴极靶之间加一个直流电压，阳离子在电场的作用下轰击靶材，它的溅射速率一般都比较大，在同样的溅射参数下，射频溅射铌膜表面粗糙度大，颗粒尺寸小，膜内含Ar含量较高，膜的临界电流密度较小。
具体实施方式
需要说明的是，在不冲突的情况下，本发明中的实施例及实施例中的特征可以相互组合。
下面结合实施例来详细说明本发明。
实施例1
一种低反射高透射膜，包括在玻璃基板上依次层叠的含铌底膜和ITO膜，所述含铌底膜为2层，分别为五氧化二铌膜和氮化铌膜，五氧化二铌膜的厚度为氮化铌膜的厚度为/>ITO膜的厚度为/>
实施例2
一种低反射高透射膜，包括在玻璃基板上依次层叠的含铌底膜和ITO膜，所述含铌底膜为3层，分别为五氧化二铌膜、氮化铌膜和金属铌膜，五氧化二铌膜的厚度为氮化铌膜的厚度为/>金属铌膜的厚度为/>金属铌膜中铌的纯度为99.95％，ITO膜的厚度为/>
实施例3
一种低反射高透射膜，包括在玻璃基板上依次层叠的含铌底膜和ITO膜，所述含铌底膜为3层，分别为五氧化二铌膜、氮化铌膜和金属铌膜，五氧化二铌膜的厚度为氮化铌膜的厚度为/>金属铌膜的厚度为/>金属铌膜中铌的纯度为99.95％，ITO膜的厚度为/>
实施例1-3所述的低反射高透射膜的制备方法，该方法包括如下步骤：
采用磁控溅射工艺，在玻璃基板上依次溅射含铌材料和ITO材料，形成含铌底膜和ITO膜，工作气体为氩气，工作压强为0.7-1.2Pa。
其中，所述氩气的浓度为99.99％。
所述含铌底膜的溅射功率为60-120W，溅射距离为5-8cm，溅射时间为10-15min，溅射方式为直流溅射。
所述ITO膜的溅射功率为80-150W，溅射距离为6-10cm，溅射时间为15-20min，溅射方式为射频溅射。
实施例1-3制得的低反射高投射膜的方阻为300-400欧。
分别取3块实施例1-3制得的5cm×5cm的镀膜玻璃，测太阳光下镀膜玻璃前后透射率和反射率数值，如表1-表6。
表1 实施例1制得镀膜玻璃的透射率
表2 实施例1制得镀膜玻璃的反射率
表3 实施例2制得镀膜玻璃的透射率
表4 实施例2制得镀膜玻璃的反射率
表5 实施例3制得镀膜玻璃的透射率
表6 实施例3制得镀膜玻璃的反射率
注：玻璃面指玻璃基板的普通面镀膜前透射率数值，镀膜面指玻璃面镀膜后的透射率数值。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (5)

1.一种低反射高透射膜，其特征在于：包括在玻璃基板上依次层叠的含铌底膜和ITO膜，含铌底膜和ITO膜的厚度之和小于
所述含铌底膜为3层，在玻璃基板上依次层叠为五氧化二铌膜、氮化铌膜和金属铌膜；
所述五氧化二铌膜的厚度为所述氮化铌膜的厚度为/>所述金属铌膜的厚度为/>
所述ITO膜的厚度为
2.根据权利要求1所述的低反射高透射膜，其特征在于：所述金属铌膜中铌的纯度为99.95％。
3.一种如权利要求1-2任一项所述的低反射高透射膜的制备方法，其特征在于：该方法包括如下步骤：
采用磁控溅射工艺，在玻璃基板上依次溅射含铌材料和ITO材料，形成含铌底膜和ITO膜，工作气体为氩气，工作压强为0.7-1.2Pa；
所述含铌底膜的溅射功率为60-120W，溅射距离为5-8cm，溅射时间为10-15min，溅射方式为直流溅射。
4.根据权利要求3所述的低反射高透射膜的制备方法，其特征在于：所述氩气的浓度为99.99％。
5.根据权利要求3所述的低反射高透射膜的制备方法，其特征在于：所述ITO膜的溅射功率为80-150W，溅射距离为6-10cm，溅射时间为15-20min，溅射方式为射频溅射。
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