CN110808297B - 一种基于AlGaN/GaN异质结的位置传感器、制备方法及检测方法 - Google Patents

一种基于AlGaN/GaN异质结的位置传感器、制备方法及检测方法 Download PDF

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CN110808297B
CN110808297B CN201911024036.2A CN201911024036A CN110808297B CN 110808297 B CN110808297 B CN 110808297B CN 201911024036 A CN201911024036 A CN 201911024036A CN 110808297 B CN110808297 B CN 110808297B
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胡来归
叶怀宇
张国旗
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Southwest University of Science and Technology
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Abstract

本发明提出了一种基于AlGaN/GaN异质结的位置传感器、制备方法及检测方法，其包括衬底，AlGaN/GaN异质结，顶部两侧的金属电极和盖帽层。利用恒定紫外光斑照射位置与器件光电响应之间的关系，实现对光斑位置的定位。本发明采用的AlGaN/GaN异质结，相比硅基光电位置传感器，可以在恶劣环境，如高温、高压等条件下工作，具有光谱选择性感应、对可见与红外的干扰不敏感，分辨率高和响应速度快等优势。

Description

一种基于AlGaN/GaN异质结的位置传感器、制备方法及检测 方法
技术领域
本发明涉及光电位置传感器领域，具体是一种基于AlGaN/GaN异质结的位置传感器、制备方法及检测方法。
背景技术
作为可以探测光斑位置的光电位置传感器，在工业检测、学术研究与国防军事上有着重要的应用价值，结合激光技术，至今已在许多行业中得到了应用，目前已运用到需要高精度监测的各行各业中，如原子力显微镜中的悬臂位移检测、桥梁的振动监控、机器人视觉定位和导航系统等。
虽然光电探测器构成的阵列也同样可以用于光斑的位置传感，即阵列式图像传感器，但由于像素之间存在着间隙，导致光斑位置测量在这些区域存在盲区，同时，需要更复杂的制备工艺。而光电位置传感器可看成单个大面积光电探测器，通常在厘米级别，因此可以有效克服像素点的不连续性，实现高分辨率测量光斑位置，并在工艺上大幅度简化，从而可大幅度降低器件的制造成本；此外，光电位置传感器对于光斑的大小不敏感，因此对尺寸较大光斑的也能精确地定位其中心点，具有非常高的灵敏度。
目前已商业化的位置传感器仍以窄带隙的硅光电探测器为主，其结构以p-n、p-i-n型和肖特基为主，与需要加偏压并以测得光电流为手段的光电探测器的工作原理不同，其原理主要是通过在垂直结构的结内电场的作用下，将光生电子-空穴对分离，利用两种载流子横向扩散及光斑与各电极间距离的不平衡性，使电极间因收集载流子数不同，让横向光伏或光电压与光斑位置产生联系，从而在零偏压下实现对光斑位置的定位。此外，学术上也提出了用其它柔性材料，如有机半导体、二维材料等代替硅材料，基于横向光电效应原理，实现了对光斑位置的检测，并能用在柔性电子领域。
但是各种材料有各自的局限性，如有机半导体受困于其稳定性差，迁移率低导致工作面积小、响应速度慢；二维材料大面积制备仍有难度，单层原子层使光电响应度偏低；而商用的硅光电位置光感器，与有机半导体、二维半导体一起，具有的宽光谱范围却不利于光谱的选择性识别，如紫外光与紫光等，同时，这些半导体在一些极端条件下，如高温、高压或太空中的高辐射环境，不能有效工作甚至器件击穿或烧毁。对于光电位置传感器，这些问题至今还未得到有效解决。
发明内容
针对上述现有技术中所存在的技术问题，本发明提供了一种基于AlGaN/GaN异质结的位置传感器，包括长条状衬底、位于所述衬底上的AlGaN/GaN异质结、盖帽层和两端部金属电极；所述AlGaN/GaN异质结包括GaN层与AlGaN层；所述GaN层与AlGaN层之间设有1-2nm的AlN空间层。由于GaN有很强的自发极化，而AlGaN与GaN两者在界面处导带不连续，导致在异质结处存在非常大的能带弯曲，在GaN一侧形成三角形势阱，并用于光生载流子的分离。
优选的，所述GaN层为厚度200nm-1μm。
优选的，所述两端部的金属电极之间距离为5mm-3cm。
优选的，所述金属电极由Ti/Al/Ni/Au的多层金属结构组成，其中Ti金属与所述GaN层欧姆接触。
优选的，所述盖帽层为GaN；所述盖帽层厚度为1-2nm。
本发明还提供一种上述传感器的制备方法，包括
S1：清洗衬底表面；
S2：MOCVD法在衬底上外延生长GaN层；
S3:将多层金属电极蒸镀在GaN层上；
S4:在GaN层上生长厚度为1-2nm的AlN空间层；
S5:在所述AlN空间层上沉积AlGaN层形成AlGaN/GaN异质结；
S6:在所述AlGaN/GaN异质结上形成GaN盖帽层。
优选的，所述S1清洗衬底方式为依次用丙酮、异丙醇和去离子水清洗，高压氮气吹干。
优选的，所述S3蒸镀方式为为电子束蒸发或热蒸发将多层金属电极用条状图形掩膜板镀在GaN层两端。
本发明还提供一种位置检测方法，采用上述传感器或方法制备的传感器，实施如下过程
紫外光斑照射所述传感器异质结处使GaN表面电子浓度分布随距离变化分布不均；
检测两端部金属电极收集的不同电子数，使两电极间形成的横向光电压与光斑位置形成关联以确定光斑的位置。
本发明提供的基于AlGaN/GaN异质结的位置传感器，在恒定的圆形紫外或紫光光斑照射下，根据光斑在传感器面上不同的区域，测量相应的光电压，并与光斑位置具有单调的关系，根据这一关系，检测光斑的位置，实现对特定光谱光斑，即紫外光斑的位移测量，从而实现对产生紫外光的目标实现定位。
与现有技术相比，本发明具有如下优点：
采用AlGaN/GaN异质结来探测紫外光源的位置，对光谱的选择性更好，迁移率与响应速度更快，同时与Si基位置传感器相比，可在高温、高压等恶劣环境下工作。
与阵列式分离式图像传感器相比，基于AlGaN/GaN异质结的传感器为单一器件，其电路简单，使得相应的制备工艺和成本大幅下降；同时，单个器件意味着连续性，使之对光斑的跟踪具备连续性，且的分辨率更高。
附图说明
图1为本发明实施例的器件结构示意图
图2为本发明实施例的器件俯视图
蓝宝石衬底1，GaN层2，金属电极3，空间层4，AlGaN层5，盖帽层6，紫外光斑7，电流/电压表8
具体实施方式
下面结合附图对本发明的较佳实施例进行详细说明，以使本发明的特点与功能更易于被本领域人员所理解，但本发明并不限于以下实施例。
实施例：
本发明实施例的提供了一种基于AlGaN/GaN异质结的一维位置传感器，如图1所示包括条状的蓝宝石衬底，一维条状结构的AlGaN/GaN异质结，GaN与AlGaN之间存在1-2nm的空间层，AlGaN层厚度为20nm，GaN层为厚度1μm。
异质结顶部两侧设有金属电极和GaN盖帽层，顶部两侧的金属电极，为欧姆接触型电极，主要由Ti/Al/Ni/Au的多层金属结构组成，Ti金属层直接与GaN盖帽层接触，盖帽层为2nm厚的GaN材料。
本发明实施例的另一方面，提供了一种基于AlGaN/GaN异质结的一维位置传感器制备方法，采用普通的紫外LED作为光源，下面介绍具体的实施过程：
首先将衬底蓝宝石衬底1用丙酮超声清洗15分钟，除去表面的有机污染物，再用异丙醇超声清洗15分钟，进一步除掉有机污染物，然后用去离子水清洗20分钟，用高压氮气吹干衬底表面。
利用MOCVD在衬底上外延生长GaN层2，厚度控制在1微米，并进一步利用电子束蒸发或热蒸发将多层金属电极3用条状图形的掩膜板，镀在GaN层两端，中间的沟道长度为10mm，宽为3mm。
进一步利用MOCVD在GaN上生长2nm的AlN层作为空间层4，从而减小后续的AlGaN对异质结中电子气的散射，以免迁移率降低。
在空间层上继续生长AlGaN层5，厚度为20nm，构成AlGaN/GaN异质结。由于GaN有很强的自发极化，而AlGaN与GaN两者在界面处导带不连续，导致在异质结处存在非常大的能带弯曲，在GaN一侧形成三角形势阱。为保护AlGaN中的Al成份不被氧化，最后在其上外延生长2nm厚的GaN盖帽层6。
在无光照条件下，整个器件处于平衡状态，利用石英透镜聚焦过的紫外光斑7照射器件电极间某处时，该处的异质结内产生非平衡载流子，在垂直方向的电场作用下，电子与空穴分离，继而造成二维电子气在该处的密度产生变化，由于横向非平衡载流子分布不均，电子与空穴在垂直方向隔离，且横向扩散速度不一致，导致两电极收集到的电子数和电极与光斑位置间的距离成比例变化。而当光斑中心位于器件的中心时，其光电压为零。采用与标定所用实验条件相同的光功率、光斑形状与大小，利用电流/电压表8(如源表KEITHLEY2612B)对其进行光电流或电压采集，根据事先标定的光电压与光斑的位置关系，由实测光电压，对光斑的位置进行定位，识别出光斑的位置。
以上所述的具体实施例，对本发明的目的、技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明。凡在本发明的精神和原则之内，通过改变某个区域厚度或掺杂浓度，改变横向结构的位置和名称，均应包含在本发明的保护范围之内。

Claims (9)

1.一种基于AlGaN/GaN异质结的位置传感器，其特征在于：包括长条状衬底、位于所述衬底上的AlGaN/GaN异质结、盖帽层和两端部金属电极；所述AlGaN/GaN异质结包括GaN层与AlGaN层；所述GaN层与AlGaN层之间设有1-2nm的AlN空间层，所述两端部金属电极分别蒸镀在GaN层的两端部上，盖帽层位于两个端部电极之间的AlGaN层上。
2.如权利要求1所述的基于AlGaN/GaN异质结的位置传感器，其特征在于：所述AlGaN层厚度为20-50nm，所述GaN层厚度为200nm-1μm。
3.如权利要求1所述的基于AlGaN/GaN异质结的位置传感器，其特征在于：所述两端部的金属电极之间距离为5mm-3cm。
4.如权利要求1所述的基于AlGaN/GaN异质结的位置传感器，其特征在于：所述金属电极由Ti/Al/Ni/Au的多层金属结构组成，其中Ti金属与所述GaN层欧姆接触。
5.如权利要求3所述的基于AlGaN/GaN异质结的位置传感器，其特征在于：所述盖帽层为GaN；所述盖帽层厚度为1-2nm。
6.一种如权利要求1-5任一项所述的传感器制备方法，其特征在于：包括
S1：清洗衬底表面；
S2：MOCVD法在衬底上外延生长GaN层；
S3:将金属电极蒸镀在GaN层上；
S4:在GaN层上生长厚度为1-2nm的AlN空间层；
S5:在所述AlN空间层上沉积AlGaN层形成AlGaN/GaN异质结；
S6:在所述AlGaN/GaN异质结上形成GaN盖帽层。
7.如权利要求6所述的传感器制备方法，其特征在于：所述S1中，清洗衬底方式为依次用丙酮、异丙醇和去离子水清洗，高压氮气吹干。
8.如权利要求6所述的传感器制备方法，其特征在于：所述S3中，蒸镀方式为电子束蒸发或热蒸发将金属电极用条状图形掩膜板镀在GaN层两端部。
9.一种位置检测方法，其特征在于：采用如权利要求1-5任一项所述传感器，实施如下过程：
紫外光斑照射所述传感器异质结处使GaN表面电子浓度分布随距离变化分布不均；
检测两端部金属电极收集的不同电子数，使两电极间形成的横向光电压与光斑位置形成关联以确定光斑的位置。
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