CN110777338A - 成膜装置及电子器件的制造方法 - Google Patents
成膜装置及电子器件的制造方法 Download PDFInfo
- Publication number
- CN110777338A CN110777338A CN201910586973.0A CN201910586973A CN110777338A CN 110777338 A CN110777338 A CN 110777338A CN 201910586973 A CN201910586973 A CN 201910586973A CN 110777338 A CN110777338 A CN 110777338A
- Authority
- CN
- China
- Prior art keywords
- target
- film
- forming apparatus
- potential
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 230000007246 mechanism Effects 0.000 claims abstract description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 58
- 238000004544 sputter deposition Methods 0.000 claims description 53
- 238000000151 deposition Methods 0.000 claims description 20
- 238000009826 distribution Methods 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 8
- 239000013077 target material Substances 0.000 abstract description 23
- 239000010408 film Substances 0.000 description 112
- 239000000758 substrate Substances 0.000 description 52
- 230000008021 deposition Effects 0.000 description 17
- 238000006073 displacement reaction Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000002123 temporal effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018143735A JP7138504B2 (ja) | 2018-07-31 | 2018-07-31 | 成膜装置及び電子デバイスの製造方法 |
| JP2018-143735 | 2018-07-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110777338A true CN110777338A (zh) | 2020-02-11 |
Family
ID=69383875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910586973.0A Pending CN110777338A (zh) | 2018-07-31 | 2019-07-02 | 成膜装置及电子器件的制造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (2) | JP7138504B2 (enExample) |
| KR (1) | KR102695213B1 (enExample) |
| CN (1) | CN110777338A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114059033A (zh) * | 2020-07-29 | 2022-02-18 | 佳能特机株式会社 | 成膜装置以及电子器件的制造方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102404459B1 (ko) * | 2021-03-10 | 2022-06-07 | 가부시키가이샤 에바라 세이사꾸쇼 | 도금 장치 및 도금 방법 |
| JP7379442B2 (ja) * | 2021-11-01 | 2023-11-14 | キヤノントッキ株式会社 | 反射率測定装置、成膜装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0148504A2 (en) * | 1983-12-26 | 1985-07-17 | Hitachi, Ltd. | Method and apparatus for sputtering |
| US5106474A (en) * | 1990-11-21 | 1992-04-21 | Viratec Thin Films, Inc. | Anode structures for magnetron sputtering apparatus |
| JPH10152772A (ja) * | 1996-11-22 | 1998-06-09 | Matsushita Electric Ind Co Ltd | スパッタリング方法及び装置 |
| JP2008184624A (ja) * | 2007-01-26 | 2008-08-14 | Osaka Vacuum Ltd | スパッタ方法及びスパッタ装置 |
| JP2016069727A (ja) * | 2014-09-30 | 2016-05-09 | 芝浦メカトロニクス株式会社 | 成膜装置及び成膜基板製造方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3076367B2 (ja) * | 1990-11-29 | 2000-08-14 | キヤノン株式会社 | プラズマ処理装置 |
| US5616225A (en) * | 1994-03-23 | 1997-04-01 | The Boc Group, Inc. | Use of multiple anodes in a magnetron for improving the uniformity of its plasma |
| CN1196169C (zh) | 1998-04-16 | 2005-04-06 | 贝克尔特Vds股份有限公司 | 磁控管中用于控制目标冲蚀和溅射的装置 |
| CN100557071C (zh) * | 2004-12-28 | 2009-11-04 | 株式会社爱发科 | 溅射源、溅镀装置、薄膜的制造方法 |
| JP2006253275A (ja) * | 2005-03-09 | 2006-09-21 | Matsushita Electric Ind Co Ltd | スパッタリング装置 |
| KR20120014589A (ko) * | 2009-09-01 | 2012-02-17 | 도쿄엘렉트론가부시키가이샤 | 스퍼터링 장치 |
| JP5903217B2 (ja) | 2011-03-24 | 2016-04-13 | 株式会社アルバック | マグネトロンスパッタ電極及びスパッタリング装置 |
| JP2013237913A (ja) | 2012-05-16 | 2013-11-28 | Ulvac Japan Ltd | スパッタリング装置及びスパッタリング方法 |
| JP2014066619A (ja) | 2012-09-26 | 2014-04-17 | Hitachi High-Technologies Corp | 成膜装置および成膜方法 |
| JP6425431B2 (ja) | 2014-06-30 | 2018-11-21 | 株式会社アルバック | スパッタリング方法 |
| JP6875798B2 (ja) * | 2016-06-24 | 2021-05-26 | 株式会社トヨタプロダクションエンジニアリング | 摩耗予測装置、摩耗予測方法、摩耗予測プログラム |
-
2018
- 2018-07-31 JP JP2018143735A patent/JP7138504B2/ja active Active
- 2018-11-29 KR KR1020180151459A patent/KR102695213B1/ko active Active
-
2019
- 2019-07-02 CN CN201910586973.0A patent/CN110777338A/zh active Pending
-
2022
- 2022-09-06 JP JP2022141500A patent/JP7461427B2/ja active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0148504A2 (en) * | 1983-12-26 | 1985-07-17 | Hitachi, Ltd. | Method and apparatus for sputtering |
| US5106474A (en) * | 1990-11-21 | 1992-04-21 | Viratec Thin Films, Inc. | Anode structures for magnetron sputtering apparatus |
| JPH10152772A (ja) * | 1996-11-22 | 1998-06-09 | Matsushita Electric Ind Co Ltd | スパッタリング方法及び装置 |
| JP2008184624A (ja) * | 2007-01-26 | 2008-08-14 | Osaka Vacuum Ltd | スパッタ方法及びスパッタ装置 |
| JP2016069727A (ja) * | 2014-09-30 | 2016-05-09 | 芝浦メカトロニクス株式会社 | 成膜装置及び成膜基板製造方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114059033A (zh) * | 2020-07-29 | 2022-02-18 | 佳能特机株式会社 | 成膜装置以及电子器件的制造方法 |
| CN114059033B (zh) * | 2020-07-29 | 2023-11-28 | 佳能特机株式会社 | 成膜装置以及电子器件的制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7138504B2 (ja) | 2022-09-16 |
| KR102695213B1 (ko) | 2024-08-13 |
| JP2022179487A (ja) | 2022-12-02 |
| JP2020019991A (ja) | 2020-02-06 |
| JP7461427B2 (ja) | 2024-04-03 |
| KR20200014170A (ko) | 2020-02-10 |
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| SE01 | Entry into force of request for substantive examination |