CN110770900A - 光电记忆器件、光电记忆读出器件及相机模组 - Google Patents
光电记忆器件、光电记忆读出器件及相机模组 Download PDFInfo
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- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
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Abstract
一种光电记忆器件(100)，包括光电二极管(10)及横向整流器(20)；该光电二极管(10)包括半导体异质结(11)、第一阳极(12)及第一阴极(13)，该半导体异质结(11)包括具有第一带隙的沟道层(111)、具有第二带隙的阻拦层(112)及形成于该沟道层(111)与该阻拦层(112)之间的二维电子气(113)，阻拦层(112)在沟道层(111)上形成，第一阳极(12)在阻拦层(112)上形成，第一阴极(13)在沟道层(111)上形成且位于沟道层(111)的一侧，第一阴极(13)的内侧与二维电子气(113)及阻拦层(112)连接；横向整流器(20)包括第二阳极(14)及第二阴极(15)，第二阴极(15)在沟道层(111)上形成且位于与第一阴极(13)相对的一侧，第二阴极(15)的内侧与阻拦层(112)连接，该第二阳极(14)分别形成于该第一阳极(12)的一端、该第二阴极(15)以及该第一阳极(12)的该端与该第二阴极(15)之间的阻拦层(112)上；第一带隙小于第二带隙。该方案可记忆光照行为。
Description
PCT国内申请，说明书已公开。
Claims (20)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2018/082582 WO2019196021A1 (zh) | 2018-04-10 | 2018-04-10 | 光电记忆器件、光电记忆读出器件及相机模组 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110770900A true CN110770900A (zh) | 2020-02-07 |
| CN110770900B CN110770900B (zh) | 2023-04-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201880041801.9A Active CN110770900B (zh) | 2018-04-10 | 2018-04-10 | 光电记忆器件、光电记忆读出器件及相机模组 |
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| CN (1) | CN110770900B (zh) |
| WO (1) | WO2019196021A1 (zh) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110001166A1 (en) * | 2008-02-25 | 2011-01-06 | National Instituteof Advanced Industrial Science and Technology | Photo-field effect transistor and its production method |
| CN101969071A (zh) * | 2009-07-27 | 2011-02-09 | 香港科技大学 | 具有混合电极的晶体管与整流器及其制造方法 |
| US20120313105A1 (en) * | 2011-06-09 | 2012-12-13 | Sawdai Donald J | Unipolar diode with low turn-on voltage |
| WO2015131846A1 (en) * | 2014-03-06 | 2015-09-11 | The Hong Kong University Of Science And Technology | P-doping-free schottky-on-heterojunction light-emitting diode and high-electron-mobility light-emitting transistor |
| CN105531797A (zh) * | 2013-06-28 | 2016-04-27 | 英特尔公司 | 具有用于III-N外延的Si（100）晶片上的Si（111）平面的纳米结构和纳米特征 |
| CN106653753A (zh) * | 2015-10-30 | 2017-05-10 | 台湾积体电路制造股份有限公司 | 半导体结构 |
| US20180062040A1 (en) * | 2016-08-31 | 2018-03-01 | Sensor Electronic Technology, Inc. | Opto-Electronic Device With Two-Dimensional Injection Layers |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7786503B2 (en) * | 2002-12-27 | 2010-08-31 | Momentive Performance Materials Inc. | Gallium nitride crystals and wafers and method of making |
| US8076699B2 (en) * | 2008-04-02 | 2011-12-13 | The Hong Kong Univ. Of Science And Technology | Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems |
-
2018
- 2018-04-10 CN CN201880041801.9A patent/CN110770900B/zh active Active
- 2018-04-10 WO PCT/CN2018/082582 patent/WO2019196021A1/zh active Application Filing
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110001166A1 (en) * | 2008-02-25 | 2011-01-06 | National Instituteof Advanced Industrial Science and Technology | Photo-field effect transistor and its production method |
| CN101969071A (zh) * | 2009-07-27 | 2011-02-09 | 香港科技大学 | 具有混合电极的晶体管与整流器及其制造方法 |
| US20120313105A1 (en) * | 2011-06-09 | 2012-12-13 | Sawdai Donald J | Unipolar diode with low turn-on voltage |
| CN105531797A (zh) * | 2013-06-28 | 2016-04-27 | 英特尔公司 | 具有用于III-N外延的Si（100）晶片上的Si（111）平面的纳米结构和纳米特征 |
| WO2015131846A1 (en) * | 2014-03-06 | 2015-09-11 | The Hong Kong University Of Science And Technology | P-doping-free schottky-on-heterojunction light-emitting diode and high-electron-mobility light-emitting transistor |
| CN106653753A (zh) * | 2015-10-30 | 2017-05-10 | 台湾积体电路制造股份有限公司 | 半导体结构 |
| US20180062040A1 (en) * | 2016-08-31 | 2018-03-01 | Sensor Electronic Technology, Inc. | Opto-Electronic Device With Two-Dimensional Injection Layers |
Non-Patent Citations (1)
| Title |
|---|
| 余金中,王杏华: "半导体量子器件物理讲座 第七讲 半导体异质结光电探测器" * |
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| Publication number | Publication date |
|---|---|
| CN110770900B (zh) | 2023-04-11 |
| WO2019196021A1 (zh) | 2019-10-17 |
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