CN110770177A - 废液存储装置和湿式蚀刻系统 - Google Patents

废液存储装置和湿式蚀刻系统 Download PDF

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Publication number
CN110770177A
CN110770177A CN201780092187.4A CN201780092187A CN110770177A CN 110770177 A CN110770177 A CN 110770177A CN 201780092187 A CN201780092187 A CN 201780092187A CN 110770177 A CN110770177 A CN 110770177A
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waste liquid
liquid storage
solute
storage device
waste
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CN201780092187.4A
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English (en)
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徐蕊
曹飞
钟仁聪
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Shenzhen Royole Technologies Co Ltd
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Shenzhen Royole Technologies Co Ltd
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Publication of CN110770177A publication Critical patent/CN110770177A/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
    • B65D88/00—Large containers
    • B65D88/54—Large containers characterised by means facilitating filling or emptying
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/72—Treatment of water, waste water, or sewage by oxidation

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Hydrology & Water Resources (AREA)
  • Environmental & Geological Engineering (AREA)
  • Water Supply & Treatment (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Weting (AREA)

Abstract

一种废液存储装置(10)及具有该废液存储装置(10)的湿式蚀刻系统，用于存储湿式蚀刻产生的废液(20)，废液(20)包括第一溶质(22)和第二溶质(24)，第二溶质(24)为第一溶质(22)发生放热氧化反应的催化剂，废液存储装置(10)包括第一储液罐(11)和连接外部的络合剂溶液源(30)与第一储液罐(11)的第一管路(12)，第一储液罐(11)用于存储废液(20)，第一管路(12)用于将络合剂(32)导引到第一储液罐(11)，络合剂(32)用于抑制第二溶质(24)对第一溶质(22)反应的催化能力。其中，湿式蚀刻系统(100)包括用于蚀刻工件和产生废液(20)的湿式蚀刻机台(40)和废液存储装置(10)。

Description

PCT国内申请，说明书已公开。

Claims (19)

  1. PCT国内申请，权利要求书已公开。
CN201780092187.4A 2017-08-16 2017-08-16 废液存储装置和湿式蚀刻系统 Pending CN110770177A (zh)

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Application Number Priority Date Filing Date Title
PCT/CN2017/097696 WO2019033307A1 (zh) 2017-08-16 2017-08-16 废液存储装置和湿式蚀刻系统

Publications (1)

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CN110770177A true CN110770177A (zh) 2020-02-07

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CN201780092187.4A Pending CN110770177A (zh) 2017-08-16 2017-08-16 废液存储装置和湿式蚀刻系统

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CN (1) CN110770177A (zh)
WO (1) WO2019033307A1 (zh)

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5712168A (en) * 1995-02-03 1998-01-27 Imec Method for evaluating, monitoring or controlling the efficiency, stability, or exhaustion of a complexing or chelating agent present in a chemical solution used for oxidizing, dissolving, etching or stripping a semiconductor wafer
JP2003166081A (ja) * 2001-11-30 2003-06-13 Hitachi Chem Co Ltd 化学エッチング廃液に含有される塩化銅の析出方法及び装置
CN101195917A (zh) * 2006-12-08 2008-06-11 中芯国际集成电路制造(上海)有限公司 蚀刻铜或者铜合金的方法
WO2009008801A1 (en) * 2007-07-11 2009-01-15 Sigma Engineering Ab A method for etching copper and recovery of the spent etching solution
CN102484061A (zh) * 2009-09-02 2012-05-30 诺发系统有限公司 降低的各向同性蚀刻剂材料消耗及废料产生
US20130207030A1 (en) * 2003-10-20 2013-08-15 Steven T. Mayer Wet etching methods for copper removal and planarization in semiconductor processing
CN103864247A (zh) * 2014-04-03 2014-06-18 南京大学环境规划设计研究院有限公司 一种以自催化氧化为核心的pcb含铜废水处理方法
CN104087938A (zh) * 2014-06-18 2014-10-08 京东方科技集团股份有限公司 一种刻蚀液储液装置及湿法刻蚀设备
CN105088242A (zh) * 2015-07-01 2015-11-25 深圳市华星光电技术有限公司 一种降低铜工艺成本的方法
CN205035099U (zh) * 2015-09-25 2016-02-17 郑州师范学院 一种化学实验废液贮存处理装置
CN205974105U (zh) * 2016-08-12 2017-02-22 深圳市洁驰科技有限公司 一种微蚀液废液处理装置
CN106929853A (zh) * 2015-12-29 2017-07-07 达兴材料股份有限公司 蚀刻液组合物及应用它的蚀刻方法
CN106966482A (zh) * 2017-03-16 2017-07-21 合肥茂腾环保科技有限公司 一种tft用铜刻蚀液废液的安全储存方法

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5712168A (en) * 1995-02-03 1998-01-27 Imec Method for evaluating, monitoring or controlling the efficiency, stability, or exhaustion of a complexing or chelating agent present in a chemical solution used for oxidizing, dissolving, etching or stripping a semiconductor wafer
JP2003166081A (ja) * 2001-11-30 2003-06-13 Hitachi Chem Co Ltd 化学エッチング廃液に含有される塩化銅の析出方法及び装置
US20130207030A1 (en) * 2003-10-20 2013-08-15 Steven T. Mayer Wet etching methods for copper removal and planarization in semiconductor processing
CN101195917A (zh) * 2006-12-08 2008-06-11 中芯国际集成电路制造(上海)有限公司 蚀刻铜或者铜合金的方法
WO2009008801A1 (en) * 2007-07-11 2009-01-15 Sigma Engineering Ab A method for etching copper and recovery of the spent etching solution
CN102484061A (zh) * 2009-09-02 2012-05-30 诺发系统有限公司 降低的各向同性蚀刻剂材料消耗及废料产生
CN103864247A (zh) * 2014-04-03 2014-06-18 南京大学环境规划设计研究院有限公司 一种以自催化氧化为核心的pcb含铜废水处理方法
CN104087938A (zh) * 2014-06-18 2014-10-08 京东方科技集团股份有限公司 一种刻蚀液储液装置及湿法刻蚀设备
CN105088242A (zh) * 2015-07-01 2015-11-25 深圳市华星光电技术有限公司 一种降低铜工艺成本的方法
CN205035099U (zh) * 2015-09-25 2016-02-17 郑州师范学院 一种化学实验废液贮存处理装置
CN106929853A (zh) * 2015-12-29 2017-07-07 达兴材料股份有限公司 蚀刻液组合物及应用它的蚀刻方法
CN205974105U (zh) * 2016-08-12 2017-02-22 深圳市洁驰科技有限公司 一种微蚀液废液处理装置
CN106966482A (zh) * 2017-03-16 2017-07-21 合肥茂腾环保科技有限公司 一种tft用铜刻蚀液废液的安全储存方法

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