CN110729267A - 具有增强的共源极电感的逆变器功率模块引线框架 - Google Patents

具有增强的共源极电感的逆变器功率模块引线框架 Download PDF

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CN110729267A
CN110729267A CN201910575050.5A CN201910575050A CN110729267A CN 110729267 A CN110729267 A CN 110729267A CN 201910575050 A CN201910575050 A CN 201910575050A CN 110729267 A CN110729267 A CN 110729267A
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die
gate
power
emitter
power module
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徐竹娴
内文·阿尔通尤尔特
陈靖奇
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Ford Global Technologies LLC
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Abstract

本公开提供了“具有增强的共源极电感的逆变器功率模块引线框架”。一种功率模块具有由引线框架总成承载的上晶体管管芯和下晶体管管芯。所述总成具有用于所述上管芯的正DC桨板和用于所述下管芯的AC桨板。上板将所述上管芯的第二侧与所述AC桨板互连，且下板将所述下管芯的第二侧与负供电杆互连。经由正供电杆和负供电杆流动的电流限定了产生主磁通量的功率回路，其中第一方向在中心区域中且返回方向位于所述中心区域外。所述上板和下板具有外边缘，其具有相应的凹口以集中返回磁通量的相应部分。每个管芯具有连接在栅极回路中的栅极焊盘，其中所述栅极回路各自与相应的集中返回通量重叠，从而增强了每个晶体管的共源极电感。

Description

具有增强的共源极电感的逆变器功率模块引线框架
技术领域
本发明大体上涉及在用于逆变器桥的功率模块中的半导体开关装置，且更具体地涉及使用在具有用于增强共源极电感的结构的功率模块中的分立开关装置的电动化车辆的逆变器驱动系统。
背景技术
电动车辆，诸如混合动力电动车辆(HEV)、插电式混合动力电动车辆(PHEV)和电池电动车辆(BEV)，使用逆变器驱动的电机来提供牵引扭矩。典型的电驱动系统可以包括DC电源(诸如电池组或燃料电池)，其由接触器开关耦合到可变电压转换器(VVC)，以调节主DC链接电容器两端的主总线电压。逆变器连接在主总线和牵引马达之间，以便将DC总线电力转换成AC电压，所述AC电压耦合到马达的绕组以推进车辆。
逆变器包括以具有多个相桥的桥式配置连接的晶体管开关装置(诸如绝缘栅双极晶体管，IGBT)。典型配置包括由具有三个相桥的逆变器驱动的三相马达。电子控制器导通和关断开关以便将来自总线的DC电压逆变为施加到马达的AC电压。逆变器可以对DC链路电压进行脉冲宽度调制，以便传送正弦电流输出的近似值，以按期望的速度和扭矩驱动马达。施加到IGBT栅极的脉冲宽度调制(PWM)控制信号根据需要将其打开和关闭，以使产生的电流与所需电流匹配。
共源极电感是指功率开关晶体管中的主功率回路(即，晶体管的漏极-源极或集电极-发射极功率输出)和栅极驱动器回路(即，栅极-源极或栅极-发射极)共享的电感。共源极电感承载装置输出电流(例如，漏极-源极或集电极-发射极电流)和栅极充电/放电电流。共源极电感的输出部分(即，功率回路)中的电流以加强(例如，加速)开关性能的方式修改栅极电压。对于开关桥，可能期望缩短开关时间，因为其可能在开关转变期间具有消耗(即，损耗)的能量的相关降低。电路电压、电流和开关操作的建模可确定共源极电感的最佳大小。
可通过选择适当的布局和/或包括在PCB迹线中形成至晶体管栅极或发射极的导电路径的附加重叠线圈操纵(例如，增强)栅极回路电感和/或功率回路电感的大小以及其之间的相互耦合程度，以便获得所需的共源极电感LCSI。在各自通过引用整体并入本文的美国专利申请公开US2018/0152113A1、US2018/0159440A1和US2018/0123478A1，以及美国专利9,994,110中示出了示例。
功率模块通常产生大量的热量，因此其通常附接到冷板(即，散热器)以获得更好的热性能。用于冷板的优选材料包括导电材料，诸如铝或铜。当电力电流流过功率模块时，功率回路的时变磁通量在导电冷板中感应出涡电流。涡电流产生磁场，其与来自功率回路的原始磁场相反。总磁通量减小，这降低了功率回路的有效电感。因此，共源极电感还可能由于涡电流而减小，这使得难以根据需要增强共源极电感。
发明内容
在本发明的一个方面中，一种功率模块包括上晶体管管芯和下晶体管管芯。引线框架总成具有接收所述上管芯的一侧并延伸至正供电杆的正DC桨板，接收所述下管芯的第一侧并延伸至AC供电杆的AC桨板，位于所述桨板之间的负供电杆，将所述上管芯的第二侧与所述AC桨板互连的上板，以及将所述下管芯的第二侧与所述负供电杆互连的下板。经由所述正供电杆和负供电杆流动的电流限定了产生主磁通量的功率回路，其中第一方向在位于所述上板和下板的内边缘内的中心区域中且返回方向位于所述中心区域外。所述上板和下板具有相应的外边缘，所述相应的外边缘各自具有适于集中返回磁通量的相应部分的相应凹口。每个管芯具有连接在相应的栅极回路中的相应栅极焊盘，其中所述栅极回路各自与相应的集中返回磁通量部分重叠，从而增强了共源极电感。
本文以半桥(2合1)转模功率模块(TPM)的形式示出了本发明，所述半桥(2合1)转模功率模块(TPM)采用引线框架，所述引线框架用于支撑晶体管管芯并路由电信号。引线框架可以是使用一个或多个分立框架元件的总成，所述一个或多个分立框架元件具有已知的特征，包括管芯桨板、供电杆、管芯杆、板、焊盘、引脚、跳接器和键合线，其中的一些可以焊接在一起。本发明还适用于其他类型的模块，诸如直接键合铜(DBC)模块，或具有其他数量的晶体管的模块，诸如1合1或6合1功率模块。
附图说明
图1是示出具有一对IGBT的逆变器的相桥的电感的等效电路的示意图。
图2是具有一对IGBT和现有技术电极结构的转模功率模块(TPM)的部分分解的平面图。
图3是图2的转模功率模块(TPM)的侧视图。
图4是图2的转模功率模块(TPM)的未分解平面图。
图5是指示相关联的栅极回路和功率回路却没有增强的共源极电感的图2的功率模块的平面图。
图6是具有增强的共源极电感的根据本发明的转模功率模块(TPM)的部分分解平面图，其中栅极回路耦合到功率回路的返回磁通量。
图7是图6的转模功率模块(TPM)的未分解平面图。
图8是图6的转模功率模块(TPM)的平面图，其指示功率回路的磁通量和存在于栅极回路中的电流流动。
图9是图6的转模功率模块(TPM)的平面图，其指示可调整以获得共源极电感的所需大小的引线框架的尺寸特征。
具体实施方式
共源极电感是由主功率回路和用于晶体管开关装置的栅极驱动器回路共享的电感。它通常由与装置封装相关联的寄生电感和印刷电路板上的迹线引起。在用于DC到AC功率转换的开关桥的背景下，共源极电感的存在可能是有益的。图1示出了用于驱动电动马达的在电动化车辆中的逆变器驱动系统中经常使用的类型的相桥10的示例，其中上晶体管11被示为具有上栅极、集电极和发射极端子的IGBT。可以使用其他类型的半导体装置，诸如MOSFET。如本文所使用的，IGBT的栅极、集电极和发射极端子也指MOSFET的栅极、漏极和源极端子。下晶体管12具有下栅极、集电极和发射极端子，其在正总线13和负总线14之间与上晶体管11串联连接以限定中间结15。反并联二极管16和17跨晶体管11和12连接。
上栅极和发射极端子产生上共源极电感，其包括磁性耦合到功率回路(即，发射极侧)电感19的栅极回路电感18。栅极驱动电路20和栅极电阻器21耦合到栅极端子，以便控制上晶体管11的切换。下栅极和发射极端子产生下共源极电感，其包括磁性耦合到功率回路电感23的栅极回路电感22。栅极驱动电路24和栅极电阻器25耦合到栅极端子，以便控制下晶体管12的切换。
图2至图4示出了具有正常(即，未增强的)共源极电感的转模功率模块(TPM)30。2合1模块承载一对上开关晶体管管芯31和下开关晶体管管芯32，其连接起来以实现逆变器桥的相桥。引线框架总成包括导电迹线或部分，其可使用具有各种二维和/或三维图案的一个或多个引线框架片获得，其中的一些可以在将模块封装在模制固体33(在图2中部分剖开)中之前或之后进行移除。第一引线框架元件34具有接收上IGBT晶体管管芯31的一侧(例如，集电极侧)的桨板35，并具有用于连接到正电压总线(DC+)的正供电杆36。第二框架元件37具有用于接收下IGBT晶体管管芯32的一侧(例如，集电极侧)的桨板38，并具有用于连接到相桥的AC输出的AC供电杆40。第三框架元件提供负供电杆41，其用于连接到负电压总线(DC-)。负供电杆41在物理上位于框架元件34和37之间。
晶体管管芯31和32具有形成在其底表面上的集电极端子或焊盘，其被焊接至桨板35和38。管芯31和32的上表面具有栅极端子/焊盘42和43以及发射极端子/焊盘44和45。键合线分别将焊盘42至45连接到引线框架总成的上栅极引脚46、下栅极引脚47、上开尔文发射极引脚48和下开尔文发射极引脚49。例如，可采用传统的线的超声波键合。引线框架总成包括上板50，其具有电连接到管芯31的发射极侧的发射极部分51以及电连接到框架元件37的延伸部52。可通过跳接器或铜间隔体53来促进在延伸部52和框架元件37之间的电连接。类似地，间隔体可以设置在发射极部分51和管芯31的发射极侧(例如，图3中的本体39)之间。间隔件提供了更好的散热能力，且还在管芯31上方产生开放空间以容纳键合线。引线框架总成还包括下板55，其具有电连接到管芯32的发射极侧的发射极部分56以及电连接到负供电杆41的延伸部57。可通过跳接器或焊接体58促进在延伸部57和负供电杆41之间的电连接。类似地，跳接器或焊接体可以设置在发射极部分56和管芯32的发射极侧之间。在图2中，板50和55侧向移位，如虚线所示，且其在图4中被示于在其的实际位置中。图3的侧视图示出了用于冷却模块30的冷板60和61，如本领域中已知的。
在图2至图4的半桥功率模块布局中，功率回路电流沿着图5中所示的路径65从DC+流到DC-。虽然供电杆36和41中的电流不是同时的，但是沿着路径65的总电流感应出如点66表示的电力电流回路内的具有高密度的磁通量。可使用右手定则来确定这个主磁通量的方向。在电流回路内的点66表示从页面向外的主磁通量方向。通量主要集中在承载功率回路电流(即，从供电杆36流过晶体管管芯31、上板50、通过晶体管管芯32、下板55和负供电杆41)的导电引线框架结构之间的空间区域中。栅极回路电流67和68(从栅极引脚，通过相应的晶体管管芯，到开尔文发射极引脚)与主磁通量66共享非常小的磁通量。因此，功率回路和栅极回路之间的互感(即，共源极电感)可以忽略不计。
如在公开案US2018/0152113A1中所示，栅极回路可以进行路由，使得其围绕功率回路的磁通量，以便增强共源极电感。栅极回路的重新路由可包括形成在引线框架、在辅助电路板上的迹线或用于连接到栅极端子和/或开尔文发射极端子的成形的键合线中的电感回路。现有结构被布置成将栅极回路与功率回路内的主磁通量耦合，所述主磁通量具有最高通量密度。然而，当利用具有导电冷板的功率模块时，在冷板中感应出的涡电流感应出相反的磁通量，其降低了主通量。因此，同样降低了取决于主通量的对共源极电感的增强。对冷板进行修改以减少涡电流是昂贵的且可能降低热性能。
本发明利用了以下发现：功率回路的返回磁通量(通常在功率回路的外部且在与主通量相反的方向上)受涡电流影响相对较小。通过调整功率回路的电流流动以集中返回磁通量的一部分且通过将栅极回路耦合到集中的返回通量，本发明即使在存在涡电流的情况下也实现了增强的共源极电感。
图6至图9示出了具有连接起来以实现逆变器桥的相桥的一对上开关晶体管管芯71和下开关晶体管管芯72的转模功率模块(TPM)70。引线框架总成包括导电迹线或部分，其可使用具有各种二维和/或三维图案的一个或多个引线框架片获得，其中的一些可以在将模块封装在模制固体73中之前或之后进行移除。第一引线框架元件74具有接收上IGBT晶体管管芯71的一侧(例如，集电极侧)的桨板75，并具有用于连接到正电压总线(DC+)的正供电杆76。第二框架元件77具有用于接收下IGBT晶体管管芯72的一侧(例如，集电极侧)的桨板78，并具有用于连接到相桥的AC输出的AC供电杆80。第三框架元件提供用于连接到负电压总线(DC-)的负供电杆81。负供电杆41在物理上位于框架元件74和77之间(使得功率回路的主磁通量通常在管芯71和72之间以及在供电杆76和81之间)。
引线框架总成包括上板82，其具有电连接到管芯71的发射极侧的发射极部分83以及电连接到框架元件77的延伸部84。可通过跳接器或焊接体促进在延伸部84和框架元件77之间的电连接。引线框架总成还包括下板89，其具有电连接到管芯72的发射极侧的发射极部分88以及电连接到负供电杆81的延伸部90。可通过跳接器或焊接体促进在延伸部90和负供电杆81之间的电连接。在图6中，板82和88侧向移位，如虚线所示，且其在图7中被示于在其的实际位置中。
IGBT发射极侧上的引线框架(即，用于上管芯71的AC和用于下管芯72的DC-)并入有特殊图案(例如，开口凹口或狭槽)以在功率回路电流路径之外产生具有高磁通量密度的区域。因此，上板82具有带凹口86的外边缘85，使得沿延伸部84的电流流动遵循弯曲路径87。外边缘85是相对于弯曲路径的“外”边缘，其后面是主功率回路电流，所述主功率回路电流沿上板83的内边缘91感应出主磁通量。弯曲路径87引起返回通量的一部分在凹口86内集中。同样地，下板88具有外边缘92，外边缘92具有凹口93，所述凹口93用于将返回通量的相应部分集中在凹口93内。图7示出了当X位于主磁通量的中心区域之外时集中的返回通量，这是因为在这个示例中返回的磁通量将被指向页面。
在所示的实施例中，IGBT的开尔文发射极被重新路由，使得每个栅极回路围绕高返回磁通量区域以产生增强的共源极电感。在传统布局中，开尔文发射极引脚通常通过键合线连接到IGBT芯片的顶表面。在本发明的这个实施例中，开尔文发射极引脚连接到引线框架(例如，AC和DC-部分)，使得栅极回路围绕集中的返回磁通量。因此，引线框架总成包括上栅极引脚94、下栅极引脚95、上开尔文发射极引脚96和下开尔文发射极引脚97。栅极引脚94和95分别通过键合线连接到管芯71和72上的栅极焊盘98和99。上开尔文发射极引脚96通过键合线100连接到框架元件77(例如，桨板78)，使得产生的栅极回路101(图8)与凹口86的集中返回通量重叠。特别地，栅极回路电流包括沿着沿凹口86的弯曲路径87流动的电流。
为了定位用于下晶体管的栅极电流回路的一部分以重叠在凹口93内的集中返回通量(其最接近于模块70的与具有栅极引脚和发射极引脚的一侧相对的一侧)，负供电杆81设有越过凹口93的区域至延伸部90所连接的供电杆81上的点的一侧的侧向条102。下开尔文发射极引脚97通过键合线103连接到条102的端部，使得产生的栅极回路104(图8)与凹口93的集中返回通量重叠。条102可以包括弯曲或倾斜部分，以避免接触引线框架总成的其他部分，诸如框架元件77。
如图8中所示，在所示的实施例中仍存在有在功率回路的中心区域中的主磁通量。因此，在跨越功率模块侧面的冷板中仍可以感应出强涡电流。然而，通过重叠栅极回路与返回磁通量获得了本发明的增强的共源极电感。在冷板中感应出的涡电流回路和由涡电流感应出的所产生的磁通量从栅极回路偏移，使得对增强的共源极电感的影响很小。在功率模块的一个特定构造中，发现虽然冷板的存在使通过与中心功率回路和涡电流的通量重叠的栅极回路增强的共源极电感的大小减小了80％，但当栅极回路替代地与功率回路的返回通量重叠时，增强的共源极电感仅被涡电流减少了20％。
在所示的实施例中，可通过设计容易地调整栅极回路的物理尺寸，以便获得增强的共源极电感的所需大小。特别地，功率回路的集中返回通量与栅极回路的区域的重叠区域的有效尺寸由图9中所示的尺寸控制。可通过改变凹口86的深度110和改变在凹口86的一个边缘和桨板78的最近边缘之间的宽度11(其限定至开尔文发射极引脚96的电流流动的区域)来改变用于上晶体管的共源极电感。可通过改变包含在凹口93，条102内的回路以及供电杆81的主要部分内的区域的深度112和宽度113来改变用于下晶体管的共源极电感。

Claims (14)

1.一种功率模块，其包括：
上晶体管管芯和下晶体管管芯；以及
引线框架总成，所述引线框架总成具有接收所述上管芯的一侧并延伸至正供电杆的正DC桨板，接收所述下管芯的第一侧并延伸至AC供电杆的AC桨板，位于所述桨板之间的负供电杆，将所述上管芯的第二侧与所述AC桨板互连的上板，以及将所述下管芯的第二侧与所述负供电杆互连的下板；
其中经由所述正供电杆和负供电杆流动的电流限定了产生主磁通量的功率回路，其中第一方向在位于所述上板和下板的内边缘内的中心区域中且相反的方向位于所述中心区域外；
其中所述上板和下板具有相应的外边缘，所述相应的外边缘各自具有适于集中返回磁通量的相应部分的相应凹口；以及
其中每个管芯具有连接在相应的栅极回路中的相应栅极焊盘，其中所述栅极回路各自与相应的集中返回磁通量部分重叠，从而增强了共源极电感。
2.如权利要求1所述的功率模块，其中所述管芯各自包括相应的发射极焊盘，其中所述引线框架总成包括用于每个管芯的相应栅极引脚和发射极引脚，且其中所述相应栅极引脚和发射极引脚连接到所述栅极焊盘和发射极焊盘，使得每个管芯的栅极回路电流沿所述相应的凹口流动。
3.如权利要求2所述的功率模块，其中键合线将用于所述上管芯的所述发射极引脚连接到所述AC桨板。
4.如权利要求2所述的功率模块，其中所述负供电杆包括越过所述下板中的所述凹口的侧向条，且其中键合线将用于所述下管芯的所述发射极引脚连接到所述侧向条。
5.如权利要求1所述的功率模块，其中所述晶体管管芯包括绝缘栅双极晶体管(IGBT)，且其中所述第一侧是所述IGBT的集电极侧。
6.如权利要求1所述的功率模块，其还包括跨越所述功率模块的侧面的至少一个冷板，其中在所述冷板中由所述主磁通量感应出的涡电流回路从所述栅极回路偏移。
7.一种功率转换器，其包括：
DC链路，所述DC链路具有被配置为接收DC电源电压的正总线和负总线；
耦合在所述总线之间的多个半桥功率模块，每个功率模块包括：
上晶体管管芯和下晶体管管芯；以及
引线框架总成，所述引线框架总成具有接收所述上管芯的一侧并延伸至正供电杆的正DC桨板，接收所述下管芯的第一侧并延伸至AC供电杆的AC桨板，位于所述桨板之间的负供电杆，将所述上管芯的第二侧与所述AC桨板互连的上板，以及将所述下管芯的第二侧与所述负供电杆互连的下板；
其中经由所述正供电杆和负供电杆流动的电流限定了产生主磁通量的功率回路，其中第一方向在位于所述上板和下板的内边缘内的中心区域中且相反的方向位于所述中心区域外；
其中所述上板和下板具有相应的外边缘，所述相应的外边缘各自具有适于集中返回磁通量的相应部分的相应凹口；以及
其中每个管芯具有连接在相应的栅极回路中的相应栅极焊盘，其中所述栅极回路各自与相应的集中返回磁通量部分重叠，从而增强了共源极电感。
8.如权利要求7所述的功率转换器，其中在每个功率模块中的所述管芯各自包括相应的发射极焊盘，其中所述引线框架总成包括用于每个管芯的相应栅极引脚和发射极引脚，且其中所述相应栅极引脚和发射极引脚连接到所述栅极焊盘和发射极焊盘，使得每个管芯的栅极回路电流沿所述相应的凹口流动。
9.如权利要求8所述的功率转换器，其中键合线将用于每个功率模块的所述上管芯的所述发射极引脚连接到所述相应的AC桨板。
10.如权利要求8所述的功率转换器，其中每个功率模块的所述负供电杆包括越过所述相应下板中的所述凹口的侧向条，且其中键合线将用于所述下管芯的所述相应发射极引脚连接到所述侧向条。
11.如权利要求7所述的功率转换器，其中所述晶体管管芯包括绝缘栅双极晶体管(IGBT)，且其中所述第一侧是所述IGBT的集电极侧。
12.如权利要求7所述的功率转换器，其中每个功率模块还包括跨越所述相应功率模块的侧面的至少一个冷板，其中在所述冷板中由所述主磁通量感应出的涡电流回路从所述栅极回路偏移。
13.一种逆变器功率模块，其包括：
上晶体管管芯和下晶体管管芯；以及
引线框架总成，所述引线框架总成连接半桥中的所述管芯并限定功率回路，所述功率回路包括连接到所述管芯的发射极侧的上板和下板；
其中所述板各自包括周边凹口，所述周边凹口集中所述功率回路外部的返回通量；
其中所述框架总成还包括耦合到所述返回通量中的相应一个的用于每个管芯的栅极回路。
14.如权利要求13所述的功率模块，其中所述框架总成还包括接收所述上管芯的集电极侧并延伸至正供电杆的正DC桨板，接收所述下管芯的集电极侧并延伸至AC供电杆的AC桨板，以及位于所述桨板之间的负供电杆；
其中所述上板将所述上管芯的所述发射极侧与所述AC桨板互连；
其中所述下板将所述下管芯的所述发射极侧与所述负供电杆互连；以及
其中经由所述正供电杆和负供电杆流动的电流在所述上板和下板的内边缘内产生了所述功率回路的主磁通量。
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