CN110707035A - Electrostatic chuck, semiconductor processing chamber and apparatus - Google Patents
Electrostatic chuck, semiconductor processing chamber and apparatus Download PDFInfo
- Publication number
- CN110707035A CN110707035A CN201910982879.7A CN201910982879A CN110707035A CN 110707035 A CN110707035 A CN 110707035A CN 201910982879 A CN201910982879 A CN 201910982879A CN 110707035 A CN110707035 A CN 110707035A
- Authority
- CN
- China
- Prior art keywords
- temperature
- electrostatic chuck
- temperature sensor
- water cooling
- bearing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Abstract
The embodiment of the application provides an electrostatic chuck, a semiconductor processing chamber and equipment. The electrostatic chuck comprises a bearing disc, a heater and a temperature sensor; the upper surface of the bearing disc is a bearing surface used for bearing the wafer; the heater is positioned below the bearing disc; the temperature sensors are uniformly arranged on the bearing plate, the top surfaces of the temperature sensors are flush with the bearing surface, or the top surfaces of the temperature sensors are lower than the bearing surface, and the temperature sensors are used for collecting the temperature of the wafer. The embodiment of the application realizes that the temperature of the electrostatic chuck can be calibrated without using a test wafer in the prior art, not only saves the step of opening the cavity and makes the operation more convenient, but also can greatly save the cost.
Description
Technical Field
The present application relates to the field of semiconductor processing technology, and more particularly, to an electrostatic chuck, a semiconductor processing chamber, and an apparatus.
Background
At present, Physical Vapor Deposition (PVD) equipment is widely applied to the manufacturing processes of semiconductors, solar cells, flat panel displays and the like. In current pvd apparatuses, an electrostatic Chuck (ESC) is usually used to replace an original mechanical Chuck to clamp a Wafer (Wafer) during the process. Common electrostatic chucks are classified into low-temperature electrostatic chucks and high-temperature electrostatic chucks. Among them, the high temperature electrostatic chuck is widely used in the semiconductor manufacturing process for fixing, supporting and transferring a Wafer (Wafer) in a chamber, providing a stable and uniform temperature for the Wafer, and preventing the Wafer from moving or dislocating in the process. For some pvd processes, accurate wafer temperature is very important to the process, otherwise wafer defects (Inline defects) such as Al whiskers Defect (Al whiskers Defect) Ring Map Defect (Ring Map Defect) may be introduced, which seriously affects the product yield. Each new high temperature electrostatic chuck installation necessarily requires an accurate temperature calibration, even recalibrating the temperature at intervals, keeping in mind the occurrence of temperature fluctuations.
In the prior art, a temperature sensor is generally arranged on a test wafer, and then the test wafer is placed on an electrostatic chuck for calibrating the temperature of the electrostatic chuck. However, the existing scheme needs cavity opening operation, so that the operation is complex and the use cost is high.
Disclosure of Invention
The application aims at the defects of the prior art and provides an electrostatic chuck, a semiconductor processing chamber and equipment, which are used for solving the technical problems of inconvenient operation and high cost in the prior art.
In a first aspect, embodiments of the present application provide an electrostatic chuck, including a carrier plate, a heater, and a temperature sensor; the upper surface of the bearing plate is a bearing surface used for bearing a wafer; the heater is positioned below the bearing disc; the temperature sensor is a plurality of, set up uniformly in bear the weight of on the dish, and a plurality of the temperature sensor top surface with the loading face parallel and level, or a plurality of temperature sensor's top surface is less than the loading face, temperature sensor is used for gathering the temperature of wafer.
In an embodiment of the present application, the electrostatic chuck further includes a temperature receiver, and the temperature receiver is connected to the temperature sensor and configured to receive a temperature signal from the temperature sensor.
In an embodiment of the present application, the electrostatic chuck further includes a plurality of beam splitters disposed below the heating plate; and the beam splitter and the temperature sensors form a sensor group, and each temperature sensor uniquely corresponds to one sensor group.
In an embodiment of the present application, the bearing surface includes a plurality of temperature measuring regions, and the sensor group is disposed corresponding to the temperature measuring regions.
In an embodiment of the present application, the bearing plate is provided with a plurality of mounting holes, and the plurality of temperature sensors are respectively disposed in the plurality of mounting holes.
In an embodiment of the present application, the plurality of temperature sensors are arranged in a circumferential array on the carrier tray.
In an embodiment of the present application, the temperature sensors are of a contact type or a non-contact type.
In an embodiment of the present application, a water cooling pipeline, a water cooling heat absorbing sheet and a water cooling heat conducting plate are further disposed below the heater, the water cooling heat absorbing sheet and the water cooling heat conducting plate are respectively located on the upper side and the lower side of the water cooling pipeline, and the water cooling heat conducting plate is arranged along the radial extension of the heater.
In a second aspect, embodiments of the present application provide a semiconductor processing chamber having disposed therein an electrostatic chuck as provided in the first aspect.
In a third aspect, embodiments of the present application provide a semiconductor processing apparatus comprising a semiconductor processing chamber as provided in the second aspect.
The technical scheme provided by the embodiment of the application has the following beneficial technical effects:
according to the embodiment of the application, the temperature sensor is arranged in the electrostatic chuck, and the temperature of the electrostatic chuck can be calibrated without using a test wafer in the prior art, so that the step of opening the cavity is saved, the operation is more convenient, and the cost can be greatly saved. In addition, the temperature measuring mode of the embodiment of the application can also enable the wafer to be directly conveyed into the cavity for temperature measurement, meanwhile, the temperature condition in the process can be monitored in real time, and time can be greatly saved. Furthermore, the performance of the electrostatic chuck in the embodiment of the present application can be known by monitoring the temperature data for a long time, so that the method and the device have important effects on wafer defects and product yield improvement.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
The foregoing and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic cross-sectional view of an electrostatic chuck in cooperation with a chamber according to an embodiment of the present disclosure;
fig. 2 is a schematic top view of an electrostatic chuck according to an embodiment of the present disclosure.
Detailed Description
Reference will now be made in detail to the present application, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar parts or parts having the same or similar functions throughout. In addition, if a detailed description of the known art is not necessary for illustrating the features of the present application, it is omitted. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application.
It will be understood by those within the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The following describes the technical solutions of the present application and how to solve the above technical problems with specific embodiments.
The embodiment of the present application provides an electrostatic chuck, a schematic structural diagram of which is shown in fig. 1, including: comprises a bearing plate 1, a heater 2 and a temperature sensor 3; the upper surface of the bearing plate 1 is a bearing surface 11, and the bearing surface 11 is used for bearing the wafer 8; the heater 2 is positioned below the bearing plate 1; temperature sensor 3 is a plurality of, and even setting is on bearing dish 1, and a plurality of temperature sensor 3 top surfaces and 11 parallel and level of bearing surface, or a plurality of temperature sensor 3's top surface is less than bearing surface 11, and temperature sensor 3 is used for gathering the temperature of wafer 8.
As shown in fig. 1, the susceptor 1 and the heater 2 may be disposed in the chamber 9 through the base 4, and the heater 2 may be disposed between the susceptor 1 and the base 4. The upper surface of the susceptor 1 may be formed with a carrying surface 11 for carrying the wafer 8. The temperature sensors 3 can be multiple and are all arranged on the bearing plate 1, and the top surfaces of the temperature sensors 3 can be lower than the bearing surface 11 so as to avoid contact with the wafer 8; or the top surface of the temperature sensor 3 may be flush with the carrying surface 11 for contacting the wafer 8 and collecting the temperature of the wafer 8. Alternatively, the electrostatic chuck may be disposed inside a chamber 9 of a vapor deposition apparatus. In practical applications, the heater 2 may apply a preset temperature to the wafer 8, for example, the preset temperature may be 300 ℃, and when the temperature of the surface of the wafer 8, which is collected by the temperature sensor 3, reaches the preset temperature, an operator may determine the temperature of the heater 2 itself, for example, the temperature of the heater 2 itself is 320 ℃, and the temperature of the heater 2 may be calibrated through the preset temperature and the temperature of the heater 2 itself.
According to the embodiment of the application, the temperature sensor is arranged in the electrostatic chuck, and the temperature of the electrostatic chuck can be calibrated without using a test wafer in the prior art, so that the step of opening the cavity is saved, the operation is more convenient, and the cost can be greatly saved. In addition, the temperature measuring mode of the embodiment of the application can also enable the wafer to be directly conveyed into the cavity for temperature measurement, meanwhile, the temperature condition in the process can be monitored in real time, and time can be greatly saved. Furthermore, the performance of the electrostatic chuck in the embodiment of the present application can be known by monitoring the temperature data for a long time, so that the method and the device have important effects on wafer defects and product yield improvement.
In an embodiment of the present application, as shown in fig. 1, the electrostatic chuck further includes a temperature receiver 5, and the temperature receiver 5 is connected to the temperature sensor 3 for receiving a temperature signal from the temperature sensor 3. The temperature sensor 3 is connected with a temperature receiver 5 through a signal wire 6; or the temperature sensor 3 is wirelessly transmitted to the temperature receiver 5. Specifically, the temperature receiver 5 is mainly used for receiving the temperature signal transmitted by the temperature sensor 3, so that various types of temperature receivers 5 can be adopted, and the temperature receiver 5 can be arranged outside the chamber 9. The temperature sensor 3 may transmit the temperature signal to the temperature receiver 5 by means of bluetooth or a wireless local area network, for example, or may transmit the temperature signal to the temperature receiver 5 by means of a wire. By adopting the design, the application of the embodiment of the application is more flexible due to various connection modes, the application range of the embodiment of the application can be effectively expanded, and the applicability is improved.
It should be noted that the embodiment of the present application is not limited to the specific implementation of the temperature receiver 5, and various types of temperature receivers 5 may be adopted for the temperature receiver 5 as long as they can correspond to the temperature sensor 3. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings according to the actual working conditions.
In one embodiment of the present application, as shown in fig. 1, the temperature sensor 3 is connected to the temperature receiver 5 through a signal line 6. The signal line 6 can be made of a conducting wire, one end of the signal line 6 is positioned inside the base 4 and connected with the temperature sensor 3, and the other end can be positioned outside the chamber 9 and connected with the temperature receiver 5. By adopting the design, the structure of the embodiment of the application is simple and convenient to use, and the cost of the embodiment of the application can be greatly reduced. However, the present embodiment is not limited thereto, and the type of the signal line 6 may be set corresponding to the type of the temperature sensor 3, and the present embodiment is not limited thereto.
In an embodiment of the present application, the electrostatic chuck further includes a plurality of beam splitters 7, the beam splitters 7 are disposed below the heating plate, one beam splitter 7 and the plurality of temperature sensors 3 form one sensor group, and each temperature sensor 3 uniquely corresponds to one sensor group.
As shown in fig. 1 and 2, the number of the beam splitters 7 may be 3, the number of the temperature sensors 3 may be 27, the 3 beam splitters 7 may divide the 27 temperature sensors 3 into three sensor groups, the temperature sensors 3 included in each sensor group may be connected to the corresponding beam splitter 7 through wires, and then each beam splitter 7 may be connected to the signal line 6. However, the number of the temperature sensors 3 included in each sensor group is not limited in the embodiments of the present application, and those skilled in the art can adjust the setting according to actual conditions. By adopting the design, the beam splitter 7 is adopted, so that the temperature sensors 3 can be grouped, and the wires of the temperature sensors 3 are prevented from being wound, so that the structure of the embodiment of the application is simpler, and the installation and maintenance efficiency of the embodiment of the application can be effectively improved.
It should be noted that, the embodiment of the present application does not limit the specific number of the beam splitters 7 and the temperature sensors 3, and those skilled in the art can adjust the setting according to the actual working condition.
In an embodiment of the present application, the bearing surface 11 includes a plurality of temperature measuring regions, and the sensor group is disposed corresponding to the temperature measuring regions.
As shown in fig. 2, the bearing surface 11 may be divided into three temperature measuring regions, and each temperature measuring region may correspond to one sensor group, for example, the bearing surface 11 may be divided into an inner ring measuring region, a middle ring measuring region, and an outer ring measuring region. Alternatively, the number of temperature measuring regions may also be set corresponding to the number of beam splitters 7. By adopting the design, the wafer can be measured in different areas, so that the yield of products can be effectively improved, and the risk of defects generated on the wafer is reduced.
It should be noted that, in the embodiments of the present application, the specific implementation of the temperature measuring area is not limited, and for example, the bearing surface 11 may be divided into a plurality of temperature measuring areas by using a fan shape. Therefore, the embodiments of the present application are not limited thereto, and those skilled in the art can adjust the settings according to the actual working conditions.
In an embodiment of the present application, as shown in fig. 2, the carrier tray 1 is provided with a plurality of mounting holes 12, and the plurality of temperature sensors 3 are respectively disposed in the plurality of mounting holes 12. The mounting holes 12 may be a plurality of through holes disposed on the carrier tray 1, and the temperature sensor 3 may be disposed in the mounting holes 12 after passing through the heater 2, and the specific connection manner may be, for example, bonding, screwing, or clipping. By adopting the design, the structure of the embodiment of the application is simple, the disassembly, assembly and maintenance are convenient, and the cost can be greatly saved.
It should be noted that the temperature sensor 3 and the carrier plate 1 may be mounted in other manners, for example, a groove may be provided on the carrier plate 1 for accommodating the temperature sensor 3. Therefore, the embodiment of the present application is not limited thereto, and a person skilled in the art can adjust the setting according to the actual working condition.
In an embodiment of the present application, as shown in fig. 2, a plurality of temperature sensors 3 are arranged on the carrier tray 1 in a circumferential array. Specifically, the bearing disc 1 is made into a plurality of concentric circles by taking the axis of the bearing disc as the center of a circle, and a plurality of temperature sensors 3 are distributed on the circumference of each concentric circle. By adopting the design, the temperature of the wafer 8 can be more uniformly measured. However, the arrangement mode of the temperature sensors 3 is not limited in the implementation of the present application, and the setting can be automatically adjusted by a person skilled in the art according to the actual working condition.
In an embodiment of the present application, the temperature sensors 3 are of the contact type or the non-contact type. As shown in fig. 1 and 2, the temperature sensor 3 may be a contact temperature sensor 3, and when the contact temperature sensor 3 is used, the top surface of the temperature sensor 3 may be flush with the carrying surface 11 so as to contact the surface of the wafer 8 for measurement. When the non-contact temperature sensor 3 is used, the top surface of the temperature sensor 3 may be slightly lower than the bearing surface to prevent the temperature sensor 3 from contacting the wafer 8. Alternatively, the measurement interval of the temperature sensor 3 may be between 0 ℃ and 400 ℃, but the measurement interval of the temperature sensor 3 is not limited in the embodiment of the present application, and a person skilled in the art can adjust the setting according to actual situations.
In an embodiment of the present application, a water cooling pipeline 21, a water cooling heat absorbing plate 22 and a water cooling heat conducting plate 23 are further disposed below the heater 2, the water cooling heat absorbing plate 22 and the water cooling heat conducting plate 23 are respectively disposed on the upper and lower sides of the water cooling pipeline 21, and the water cooling heat conducting plate 23 extends along the radial direction of the heater 2.
As shown in fig. 1, a water cooling pipe 21 may be located below the heater 2, and it may be disposed inside the susceptor 4. Specifically, the water cooling pipeline 21 may be a circular pipeline disposed concentrically with the heater 2, but the embodiment of the present application is not limited thereto. The water-cooling heat absorbing fins 22 may be disposed above the water-cooling pipeline 21 and closely attached to the water-cooling pipeline 21, and the water-cooling heat absorbing fins 22 may have a fin structure in practical application, but the embodiment of the present application does not limit the specific structure thereof. The water-cooling heat-conducting plate 23 may have a plate-like structure, which can be closely attached to the lower portion of the water-cooling pipe 21. Optionally, the outer edge of the water-cooled heat-conducting plate 23 can also be attached to the inner wall of the base 4. By adopting the design, the electrostatic chuck can be rapidly cooled conveniently, and the temperature of the electrostatic chuck can be rapidly adjusted, so that the process performance and the process efficiency can be effectively improved.
In a second aspect, the present invention provides a semiconductor processing chamber having an electrostatic chuck as provided in the first aspect.
Based on the same inventive concept, in a third aspect, an embodiment of the present application provides a semiconductor processing apparatus including the semiconductor processing chamber as provided in the second aspect.
By applying the embodiment of the application, at least the following beneficial effects can be realized:
according to the embodiment of the application, the temperature sensor is arranged in the electrostatic chuck, and the temperature of the electrostatic chuck can be calibrated without using a test wafer in the prior art, so that the step of opening the cavity is saved, the operation is more convenient, and the cost can be greatly saved. In addition, the temperature measuring mode of the embodiment of the application can also enable the wafer to be directly conveyed into the cavity for temperature measurement, meanwhile, the temperature condition in the process can be monitored in real time, and time can be greatly saved. Furthermore, the performance of the electrostatic chuck in the embodiment of the present application can be known by monitoring the temperature data for a long time, so that the method and the device have important effects on wafer defects and product yield improvement.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
In the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the present invention.
The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the description herein, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing is only a partial embodiment of the present application, and it should be noted that, for those skilled in the art, several modifications and decorations can be made without departing from the principle of the present application, and these modifications and decorations should also be regarded as the protection scope of the present application.
Claims (10)
1. An electrostatic chuck is characterized by comprising a bearing disc, a heater and a temperature sensor;
the upper surface of the bearing plate is a bearing surface used for bearing a wafer;
the heater is positioned below the bearing disc;
the temperature sensor is a plurality of, set up uniformly in bear the weight of on the dish, and a plurality of the temperature sensor top surface with the loading face parallel and level, or a plurality of temperature sensor's top surface is less than the loading face, temperature sensor is used for gathering the temperature of wafer.
2. The electrostatic chuck of claim 1, further comprising a temperature receiver coupled to the temperature sensor for receiving a temperature signal from the temperature sensor.
3. The electrostatic chuck of claim 2, further comprising a plurality of beam splitters disposed below the heating plate;
and the beam splitter and the temperature sensors form a sensor group, and each temperature sensor uniquely corresponds to one sensor group.
4. The electrostatic chuck of claim 3, wherein the bearing surface includes a plurality of temperature sensing regions, the sensor group being disposed in correspondence with the temperature sensing regions.
5. The electrostatic chuck of any of claims 1 to 4, wherein the carrier plate is provided with a plurality of mounting holes, and the plurality of temperature sensors are respectively provided in the plurality of mounting holes.
6. The electrostatic chuck of any of claims 1 to 4, wherein a plurality of said temperature sensors are arranged in a circumferential array on said carrier plate.
7. The electrostatic chuck of any of claims 1 to 4, wherein a plurality of said temperature sensors are of the contact or non-contact type.
8. The electrostatic chuck of claim 1, wherein a water cooling pipeline, a water cooling heat absorbing plate and a water cooling heat conducting plate are further disposed below the heater, the water cooling heat absorbing plate and the water cooling heat conducting plate are respectively disposed at upper and lower sides of the water cooling pipeline, and the water cooling heat conducting plate is disposed to extend in a radial direction of the heater.
9. A semiconductor processing chamber characterized in that an electrostatic chuck according to any of claims 1 to 8 is disposed within the chamber.
10. A semiconductor processing apparatus comprising the semiconductor processing chamber of claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910982879.7A CN110707035A (en) | 2019-10-16 | 2019-10-16 | Electrostatic chuck, semiconductor processing chamber and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910982879.7A CN110707035A (en) | 2019-10-16 | 2019-10-16 | Electrostatic chuck, semiconductor processing chamber and apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110707035A true CN110707035A (en) | 2020-01-17 |
Family
ID=69199681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910982879.7A Pending CN110707035A (en) | 2019-10-16 | 2019-10-16 | Electrostatic chuck, semiconductor processing chamber and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110707035A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112345119A (en) * | 2020-09-25 | 2021-02-09 | 华东光电集成器件研究所 | Semiconductor wafer temperature calibration system |
| CN112481696A (en) * | 2020-11-16 | 2021-03-12 | 西安奕斯伟硅片技术有限公司 | Temperature measuring device for epitaxial equipment and epitaxial equipment |
| CN114690815A (en) * | 2022-03-08 | 2022-07-01 | 深圳大学 | High-temperature constant-temperature heating device |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1842655A (en) * | 2003-09-17 | 2006-10-04 | 梅科斯特拉克斯勒股份公司 | Magnetic bearing device and vacuum pump |
| CN101111934A (en) * | 2004-12-02 | 2008-01-23 | 蓝姆研究公司 | Method and apparatus for controlling spatial temperature distribution |
| KR20080023848A (en) * | 2006-09-12 | 2008-03-17 | 세메스 주식회사 | Temperature measuring apparatus of non-contact type and method of the same |
| CN101399165A (en) * | 2007-09-29 | 2009-04-01 | 沈阳芯源微电子设备有限公司 | Multi-sectorization hot disc structure |
| CN104006893A (en) * | 2014-05-30 | 2014-08-27 | 佛山市川东照明科技有限公司 | Temperature sensor with multi-protection function |
| US20150226611A1 (en) * | 2014-02-12 | 2015-08-13 | Matthew J. Busche | Apparatus and method for measurement of the thermal performance of an electrostatic wafer chuck |
| CN105470165A (en) * | 2014-09-25 | 2016-04-06 | 东京毅力科创株式会社 | Substrate heat treatment apparatus, substrate heat treatment method, and heat-treatment-condition detecting apparatus |
| CN105545476A (en) * | 2015-12-11 | 2016-05-04 | 中国北方发动机研究所(天津) | V-shaped eight-cylinder double-ECU electric engine harness |
| CN205246297U (en) * | 2015-11-10 | 2016-05-18 | 国核电站运行服务技术有限公司 | A suction gun for helium leak test of steam generator heat -transfer pipe |
| US20170229331A1 (en) * | 2016-02-08 | 2017-08-10 | Watlow Electric Manufacturing Company | Temperature sensing system for rotatable wafer support assembly |
| CN107223364A (en) * | 2015-02-16 | 2017-09-29 | Ppg工业俄亥俄公司 | Intelligent window thermal control system |
| TW201837976A (en) * | 2012-06-12 | 2018-10-16 | 美商康波能再造工程公司 | Method for manufacturing semiconductor processing equipment and manufactured device |
| CN208923079U (en) * | 2018-10-11 | 2019-05-31 | 北京北方华创微电子装备有限公司 | Electrostatic chuck and reaction chamber |
-
2019
- 2019-10-16 CN CN201910982879.7A patent/CN110707035A/en active Pending
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1842655A (en) * | 2003-09-17 | 2006-10-04 | 梅科斯特拉克斯勒股份公司 | Magnetic bearing device and vacuum pump |
| CN101111934A (en) * | 2004-12-02 | 2008-01-23 | 蓝姆研究公司 | Method and apparatus for controlling spatial temperature distribution |
| KR20080023848A (en) * | 2006-09-12 | 2008-03-17 | 세메스 주식회사 | Temperature measuring apparatus of non-contact type and method of the same |
| CN101399165A (en) * | 2007-09-29 | 2009-04-01 | 沈阳芯源微电子设备有限公司 | Multi-sectorization hot disc structure |
| TW201837976A (en) * | 2012-06-12 | 2018-10-16 | 美商康波能再造工程公司 | Method for manufacturing semiconductor processing equipment and manufactured device |
| US20150226611A1 (en) * | 2014-02-12 | 2015-08-13 | Matthew J. Busche | Apparatus and method for measurement of the thermal performance of an electrostatic wafer chuck |
| CN104006893A (en) * | 2014-05-30 | 2014-08-27 | 佛山市川东照明科技有限公司 | Temperature sensor with multi-protection function |
| CN105470165A (en) * | 2014-09-25 | 2016-04-06 | 东京毅力科创株式会社 | Substrate heat treatment apparatus, substrate heat treatment method, and heat-treatment-condition detecting apparatus |
| CN107223364A (en) * | 2015-02-16 | 2017-09-29 | Ppg工业俄亥俄公司 | Intelligent window thermal control system |
| CN205246297U (en) * | 2015-11-10 | 2016-05-18 | 国核电站运行服务技术有限公司 | A suction gun for helium leak test of steam generator heat -transfer pipe |
| CN105545476A (en) * | 2015-12-11 | 2016-05-04 | 中国北方发动机研究所(天津) | V-shaped eight-cylinder double-ECU electric engine harness |
| US20170229331A1 (en) * | 2016-02-08 | 2017-08-10 | Watlow Electric Manufacturing Company | Temperature sensing system for rotatable wafer support assembly |
| CN208923079U (en) * | 2018-10-11 | 2019-05-31 | 北京北方华创微电子装备有限公司 | Electrostatic chuck and reaction chamber |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112345119A (en) * | 2020-09-25 | 2021-02-09 | 华东光电集成器件研究所 | Semiconductor wafer temperature calibration system |
| CN112481696A (en) * | 2020-11-16 | 2021-03-12 | 西安奕斯伟硅片技术有限公司 | Temperature measuring device for epitaxial equipment and epitaxial equipment |
| CN114690815A (en) * | 2022-03-08 | 2022-07-01 | 深圳大学 | High-temperature constant-temperature heating device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110707035A (en) | Electrostatic chuck, semiconductor processing chamber and apparatus | |
| CN101512307B (en) | In-situ wafer temperature measurement and control | |
| CN101887039B (en) | Vacuum measuring device for measuring performance of solar collector tube | |
| CN108760631B (en) | Optical window with temperature self-adaptation function | |
| KR20050051666A (en) | Heat treatment apparatus | |
| CN105206552A (en) | Methods of fault detection for multiplexed heater array | |
| WO2024000284A1 (en) | Temperature compensation system, semiconductor device, and temperature compensation method | |
| WO2017172131A1 (en) | Susceptor support | |
| US20210388501A1 (en) | Semiconductor deposition monitoring device | |
| CN112420473B (en) | Epitaxial equipment and temperature measuring device thereof | |
| CN109870406B (en) | Method and system for testing adhesive force of material surface coating | |
| TW202309320A (en) | In-situ film growth rate monitoring apparatus, systems, and methods for substrate processing | |
| CN102560681B (en) | Temperature measuring equipment and diffusion furnace | |
| CN111812340B (en) | Temperature raising disc mechanism of full-automatic urine specific protein analyzer | |
| CN110702947B (en) | High temperature resistant accelerometer calibration is with connecting piece | |
| CN111189551A (en) | Wafer heater surface temperature distribution detection device | |
| JP3330570B2 (en) | Simulated temperature measuring plate and temperature measuring device for vertical heating furnace | |
| CN213022000U (en) | Wafer heater surface temperature distribution detection device | |
| CN218182172U (en) | Heating device for controlling wafer warping | |
| CN218156885U (en) | Heat exchange performance detection device | |
| CN218180142U (en) | Measurement tray, measurement tool and semiconductor equipment | |
| CN215639858U (en) | Thermocouple comparison device | |
| CN220202032U (en) | Heating device and coating machine | |
| CN101769911B (en) | Low temperature frequency curve testing device for quartz wafer | |
| KR102572354B1 (en) | Monitoring system for evapoporation process and method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200117 |