CN218182172U - Heating device for controlling wafer warping - Google Patents
Heating device for controlling wafer warping Download PDFInfo
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- CN218182172U CN218182172U CN202222285892.7U CN202222285892U CN218182172U CN 218182172 U CN218182172 U CN 218182172U CN 202222285892 U CN202222285892 U CN 202222285892U CN 218182172 U CN218182172 U CN 218182172U
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Abstract
The utility model relates to a semiconductor field specifically discloses a control warping heating device of wafer, including box and the first heater of parcel outside the box, heating device still includes heating control module, second heater and the support element, wherein heating control module is including the first temperature detecting element who is used for surveing the internal temperature of box, be used for surveing the second temperature detecting element of heating plate edge and/or center department and be used for controlling the controller of first heater and second heater, first temperature detecting element, second temperature detecting element and heating plate all with the controller electric connection. The scheme controller compares the temperatures measured by the first temperature detection unit and the second temperature detection unit, controls the temperature of the heating plate according to the temperature difference condition, reduces the temperature difference between the heating plate and the air in the box body, uniformly heats the wafer, and further reduces the possibility of secondary warping of the wafer.
Description
Technical Field
The utility model relates to a semiconductor technology field especially relates to a control warping heating device of wafer.
Background
In the field of wafer level packaging, the flatness requirement of the wafer is high because most processes are directly performed on the wafer. However, since most of the processes in the wafer level packaging process flow involve high temperature treatment, the wafer inevitably has warpage, so that the leveling of the warped wafer is an important processing step. Moreover, the warpage of the wafer generally accumulates along with the process progress, and the warpage of the wafer becomes more serious and the leveling requirement is more urgent along with the progress of the processing step.
Generally, an oven is adopted to level the wafer, and the leveling treatment is carried out after the warped wafer is heated; in the prior art, a wafer oven mostly adopts a mode of heating outside a box body, the basic principle is as shown in the attached figure 1 of the specification, a heating device transmits heat into the box body 1 of the oven, a plurality of temperature sensors are arranged in the box body 1 to monitor the temperature in the box body 1, when the box body 1 is heated, the heat is transmitted to each position in the box body 1 from a heat source outside the box body 1 through a first heater 2 positioned on the side wall of the box body 1 and is discharged from a heat dissipation port 3 positioned at the top of the box body 1, in the process, an uneven temperature field is formed inside the box body 1, wherein the temperature at the position of the first heater 2 is higher than the temperature at the central position of the box body 1, the temperature of the heat dissipation port 3 is the lowest, and meanwhile, due to the different arrangement positions and intervals of wafers 4 in the box body 1, the heating speeds of the surfaces of the wafers 4 at different positions in the box body 1 are inconsistent, so that the heating time and power of the heat source are difficult to be accurately mastered; moreover, for each wafer 4, the temperature rising rate of the edge is higher than that of the center thereof, and the difference of the thermal expansion coefficients of the packaging materials on the wafer is added, which causes the wafer to generate a certain warpage during baking, especially for some wafers 4 located at the center of the box 1, since other wafers longitudinally adjacent to the wafer 4 will block heat from being transmitted from the edge of the wafer 4 to the center of the wafer 4, and the temperature rising rate of the center of the wafer 4 is lower, the overall temperature rising of the wafer 4 is more uneven, so that the wafer 4 is likely to generate a secondary warpage during heating.
SUMMERY OF THE UTILITY MODEL
To exist not enough among the prior art, the utility model provides a control warping heating device of wafer to solve the wafer when the heating because the air is heated unevenly and the wafer of the different positions that lead to is heated unevenly in the box, easily produce secondary warpage and the problem that heating time, power are difficult to hold from this wafer, especially the heating rate that wafer central point put has further aggravated the warpage degree of wafer again slowly.
In order to achieve the above purpose, the basic scheme of the utility model is as follows: a heating device for controlling wafer warping comprises a box body and a first heater wrapped outside the box body, and further comprises:
the second heater comprises a plurality of heating plates which are arranged in the box body in parallel;
the supporting unit is arranged in the box body and used for supporting the wafer between the two adjacent heating plates and enabling the distance between the wafer and the two adjacent heating plates to be equal;
the heating control module comprises a first temperature detection unit for detecting the temperature in the box body, a second temperature detection unit for detecting the temperature of the heating plate and a controller for controlling the first heater and the second heater;
wherein, first heater, first temperature detecting element, second temperature detecting element and heating plate all with the controller electricity connection.
The technical principle of the utility model is that: when the technical scheme of the utility model is adopted to heat the wafer, the wafer is placed between two adjacent heating plates through the arrangement of the supporting unit, and the distance between the wafer and the two adjacent heating plates is equal, when the heating plates start the heating function, the upper surface and the lower surface of the wafer are uniformly heated, and the uniformity of wafer heating can be improved; meanwhile, the first heater is also synchronously opened to heat the air in the box body, a heat source is provided for heating the wafer, the first temperature detection unit detects the temperature in the box body, the second temperature detection unit detects the temperature of the heating plate, the first temperature detection unit and the second temperature detection unit transmit detected temperature signals to the controller, the controller compares the temperatures detected by the first temperature detection unit and the second temperature detection unit, the heating power of the heating plate or the second heater is controlled according to the temperature difference condition, the temperature difference between the heating plate and the air in the box body is reduced, the wafer is uniformly heated, and the degree of secondary warping of the wafer is further reduced.
In the process, the first temperature detection unit, the second temperature detection unit and the controller are matched to accurately measure the temperature at the center and the edge of the second heater, so that the controller can conveniently control the temperature of the heating plate; in this process, because the temperature rate of change of heating plate is faster than the interior empty temperature rate of change of temperature of heater control box, but the heating temperature of controller priority control heating plate this moment makes the temperature of heating plate and the temperature of the interior air of box tend to unanimity, simultaneously in this in-process, the heating temperature of accurate control heating plate is come through the temperature of survey heating plate to the controller, reduces the difference in temperature of heating plate and surrounding air, lets the wafer be heated evenly, reduces the degree that the wafer produced the warpage.
Further, the heating plate is horizontally arranged in the box body.
Through the arrangement, the supporting unit can be conveniently adopted to horizontally support the wafer between the two adjacent heating plates, the phenomenon that the wafer is concave due to the fact that the wafer is not supported under the action of gravity is avoided, and secondary warping of the wafer is avoided.
Further, the supporting unit comprises a supporting ring for supporting the edge of the wafer and a supporting column for supporting the center of the wafer, and the supporting column and the supporting ring are both fixedly installed on the upper surface of the heating plate.
Through the arrangement, the support rings for supporting the wafers are fixedly arranged on the upper surfaces of the heating plates, so that the wafers are equidistantly arranged between the two adjacent heating plates, and the wafers are uniformly heated; the annular design of the support ring provides uniform circumferential supporting force for the edge of the wafer, so that the wafer is prevented from being deformed under the action of self gravity after being heated; meanwhile, the supporting columns can support the center of the wafer, so that the phenomenon that the center of the wafer is concave due to the fact that the center of the wafer is not supported under the action of gravity is avoided, and the wafer is further prevented from diffusing and warping for the second time.
Furthermore, the supporting unit comprises a plurality of supporting columns for supporting the wafer, and the supporting columns are uniformly and fixedly arranged on the upper surface of the heating plate.
Through the arrangement, the supporting columns can uniformly support the wafer, deformation of the wafer under the action of self gravity after the wafer is heated is prevented, and downward depression of the center of the wafer is avoided.
Further, the supporting unit comprises a supporting column for supporting the central area of the wafer and a plurality of supporting sections for supporting the edge of the wafer, and the supporting sections are distributed around the supporting column in a circumferential manner.
Through the arrangement, the supporting column can be matched with the supporting section to stably and uniformly support the center and the edge of the wafer respectively, so that the secondary warping degree of the wafer can be inhibited.
Further, the first temperature detection unit comprises a first temperature sensor, a plurality of first temperature sensing probes and a plurality of first temperature sensing lines which are respectively and electrically connected between the first temperature sensing probes, and the first temperature sensing probes extend into the box body to detect the temperature of each position in the box body; the second temperature detection unit comprises a second temperature sensor, a plurality of second temperature sensing probes and a plurality of second temperature sensing lines which are respectively and electrically connected between the second temperature sensor and the plurality of second temperature sensing probes, one part of the second temperature sensing probes are in sensing connection with the edge of the heating plate, and the other part of the second temperature sensing probes are in sensing connection with the center of the heating plate.
Through the arrangement, the plurality of first temperature sensing probes can detect the temperature of each position inside the box body, and transmit the detected temperature signals to the first temperature sensor through the first temperature sensing wire, and transmit the temperature signals to the controller through the first temperature sensor; simultaneously, the temperature of some second temperature-sensing probes to heating plate edge is surveyed, the temperature of another part second temperature-sensing probes to heating plate center department is surveyed, the temperature of heating plate edge and heating plate center department passes through in second temperature-sensing line transmission to the controller, the controller judges the temperature in the box respectively, the temperature difference between heating plate edge and the heating plate center department, the controller of being convenient for sends the instruction that the temperature of control heater risees or reduces, let the temperature in the box, the temperature of heating plate edge and heating plate center department tends to unanimous, reduce the difference in temperature, reduce the probability that the wafer is heated unevenly.
Furthermore, a limiting ring is coaxially arranged and fixedly mounted on the upper end face of the supporting ring, and an annular groove for embedding the wafer is coaxially arranged on the upper end face of the limiting ring.
Through the arrangement, when the wafer is placed on the heating plate, the annular groove on the limiting ring limits the wafer, so that the wafer can be stably installed on the heating plate.
Furthermore, the inner wall of the annular groove is provided with first anti-skid grains.
Through the arrangement, the wafer is contacted with the first anti-slip patterns, and the wafer can be stably limited after being installed.
Further, still include the vertical sliding construction who sets up in the box, sliding construction includes:
the sliding rail is vertically and fixedly arranged on the box body, and a plurality of scale marks are arranged on the sliding rail;
the sliding chutes are axially arranged on the sliding rails;
the sliding piece is fixedly arranged on the side wall of the heating plate, and the sliding piece and the sliding rail form lockable sliding connection.
Through the arrangement, when the heating plate is installed, the vertical distance between two adjacent heating plates can be adjusted according to the thickness of the wafer, the sliding sheet on the sliding rail slides at the moment, so that the sliding sheet drives the heating plate to move synchronously along the sliding rail, the scale marks on the sliding rail can be referred to in the process, and the accurate and quick adjustment of the positions of the heating plates is realized.
Furthermore, the cross section of the sliding sheet is an inverted 'U' -shaped metal sheet, the sliding rail is provided with a sliding groove with a T-shaped cross section along the axial direction of the sliding rail, and the metal sheet can be abutted against the inner wall of the sliding groove.
Through the arrangement, when the distance between two adjacent heating plates is adjusted, the outer wall of the metal sheet is pressed, the two ends of the metal sheet are separated from the inner wall of the sliding groove by utilizing the elasticity brought by the L-shaped structure of the sliding sheet, then the metal sheet and the heating plates are vertically moved along the sliding groove of the sliding rail, and the vertical position of the heating plates is adjusted; when the outer wall at slack sheetmetal, the sheetmetal offsets with the lateral wall of slide rail spout once more under self elastic effect, carries out the locking to the position of metal and heating plate, and then can control the vertical distance between two adjacent heating plates, strengthens the adjustability of heating plate position.
Drawings
FIG. 1 is a schematic diagram of an oven structure in the background art.
Fig. 2 is a sectional view in the front view direction of embodiment 1 of the present invention.
Fig. 3 is a partial cross-sectional view of a single heating plate, a support ring, a support pillar, and a wafer in embodiment 1 of the present invention.
Fig. 4 is a top view of the heating plate and the supporting unit in embodiment 2 of the present invention.
Fig. 5 is a top view of the heating plate and the supporting unit in embodiment 3 of the present invention.
Fig. 6 is a sectional view in the front view direction of embodiment 4 of the present invention.
Fig. 7 is a transverse sectional view of a connection portion between the slide rail and the slide plate according to embodiment 4 of the present invention.
Fig. 8 is a partial cross-sectional view of a single heating plate, a support ring, a support pillar, a limit ring, and a wafer in embodiment 4 of the present invention.
In the drawings, wherein: the temperature control device comprises a box body 1, a first heater 2, a heat dissipation opening 3, a wafer 4, a first temperature detection unit 20, a first temperature sensor 201, a first temperature induction line 202, a first temperature induction probe 203, a second temperature detection unit 30, a ceramic heating plate 31, a second temperature sensor 301, a second temperature induction line 302, a second temperature induction probe 303, a support ring 401, a support column 402, a limit ring 403, an annular groove 404, a slide rail 50, a slide groove 501, a scale mark 502, a slide sheet 503, a support section 60, a first mounting column 701 and a second mounting column 702.
Detailed Description
The technical solution of the present invention will be further explained with reference to the accompanying drawings and embodiments.
Example 1
As shown in fig. 2 and fig. 3, this embodiment provides a heating device for controlling wafer warpage, which includes a box 1, a first heater 2, a second heater, a supporting unit and a heating control module, wherein a heat dissipation opening 3 is formed in a top of the box 1, so as to avoid excessive internal air pressure of the box 1 when the box is heated to a high temperature, the first heater 2 is fixedly wrapped on an external side surface of the box 1, and is used for heating air in the box 1, and further heating a wafer 4 placed inside the box 1.
As shown in fig. 2, the second heater comprises a plurality of heating plates which are arranged in the box body in parallel, and the heating plates can be ceramic heating plates 31; the supporting unit is arranged in the box body 1 and used for supporting the wafer 4 between two adjacent heating plates and enabling the distance between the wafer 4 and the two adjacent heating plates to be equal; the heating control module comprises a first temperature detection unit 20 for measuring the temperature in the box body 1, a second temperature detection unit 30 for measuring the temperature of the heating plate and a controller for connecting and controlling the first heater 2 and the second heater, wherein the controller is also respectively connected with the first temperature detection unit 20 and the second temperature detection unit 30; the first heater 2, the first temperature detection unit 20, the second temperature detection unit 30 and the ceramic heating plate 31 are all electrically connected with the controller. In this embodiment, adopt inside the box 1, the outside mode of heating simultaneously, can make the inside temperature of box 1 rise fast and can more effectively control temperature and heating temperature keep invariable and even, avoid the temperature field of each point to differ too much, and because wafer 4 can be supported between two adjacent parallel heating plates equidistantly for wafer 4 heats faster and each part is heated basically evenly, guarantees the quality and the efficiency of 4 flattening of wafer.
The heating plates can be horizontally arranged in the box body 1, and can also be vertically arranged or arranged in a way of forming other included angles with the horizontal plane; moreover, the heating plates can be fixed in the box body 1 through bolts, and other movable installation modes can also be adopted, so long as the wafer 4 installed between two adjacent heating plates can be rapidly and uniformly heated.
Wherein, the first heater 22 can be fixed and wrapped on the vertical side surface of the outer part of the box body 1 by bolts.
The first temperature detection unit 20 includes a first temperature sensor 201, a plurality of first temperature sensing probes 203, and a plurality of first temperature sensing lines 202 electrically connected between the first temperature sensor 201 and the plurality of first temperature sensing probes 203, respectively, and the first temperature sensing probes extend into the interior of the tank 1 to detect the temperature of each position in the tank; the second temperature detecting unit 30 includes a second temperature sensor 301, a plurality of second temperature sensing probes 303, and a plurality of second temperature sensing lines 302 electrically coupled between the second temperature sensor 301 and the plurality of second temperature sensing probes 303, respectively, a portion of the second temperature sensing probes are inductively connected to the edge of the ceramic heating plate, and another portion of the second temperature sensing probes 303 are inductively connected to the center of the ceramic heating plate 31. The first temperature sensor 201 and the second temperature sensor 301 can be disposed outside the case, so as to avoid the influence on the internal circuit due to the high temperature environment.
Meanwhile, as shown in fig. 3, the supporting unit includes a supporting ring 401 and a supporting column 402 for supporting the wafer 4, wherein the supporting ring 401 may be a complete ring structure, the supporting ring 401 and the supporting column 402 are both coaxially glued on the upper surface of the ceramic heating plate 31, the supporting column 402 is located in the supporting ring 401, the supporting column 402 is located at the center of the ceramic heating plate 31, and after the wafer 4 is placed on the supporting ring 401 and the supporting column 402, the wafer 4 is located between two adjacent ceramic heating plates 31 and has the same vertical distance as the vertical distance between two adjacent ceramic heating plates 31.
When the heating device for controlling wafer warpage in this embodiment is used, the wafer 4 is placed on the ceramic heating plate 31, the edge of the wafer 4 contacts the support ring 401, and the center of the wafer 4 contacts the upper end face of the support pillar 402; after placing a plurality of wafers 4, start ceramic heating plate 31 and first heater 2, because wafer 4 is located between two ceramic heating plates 31, ceramic heating plate 31 intensifies the back, because ceramic heating plate 31 heats evenly, the upper and lower surface of whole wafer 4 can receive radiant heat and the heat of through air conduction rapidly and evenly, makes wafer 4 edge and center can be heated with basically the same speed simultaneously. At the same time, the first heater 2 can heat the air in the chamber 1 synchronously, and the wafer 4 is heated by raising the temperature of the air in the chamber 1. The specific heating structure adopted by the first heater 2 is a galvanic couple structure, and the side wall of the box body 1 can conduct heat so as to heat the air in the box body 1.
In the process of heating and baking the wafer 4, the second temperature sensing probe 303 transmits the temperature signal of the ceramic heating plate 31 to the second temperature sensor 301 through the second temperature sensing wire 302, and the second temperature sensor 301 transmits the calculated temperature data to the controller; the first temperature sensor 201 also converts the temperature condition of the inside of the box body 1, which is measured by the first temperature sensing probe 203 and the first temperature sensing line 202, into temperature data, the temperature data is also transmitted to the controller for signal processing, and the controller controls the ceramic heating plate 31 to increase or decrease the heating power based on the temperature difference between the temperature of the inside of the box body 1 and the temperature of the ceramic heating plate 31, so that the temperature of the ceramic heating plate 31 and the temperature of the inside of the box body 1 tend to be consistent, uniform heating of the wafer 4 is realized, and leveling processing of the wafer is facilitated; in addition, the heating power of the first heater 2 may also be controlled so that the temperature of the ceramic heating plate 31 tends to coincide with the temperature of the air inside the case 1.
In the process of heating the wafer 4, the support ring 401 and the support column 402 can stably support the wafer 4, and the support column 402 can support the center of the wafer 4, so that the center of the wafer 4 is prevented from being recessed due to gravity caused by no support, and the wafer 4 is further prevented from being warped for the second time.
Example 2
When the wafer 4 is supported, the plurality of support sections 60 can abut against the edge of the wafer 4, so that the support sections 60 can stably and uniformly support the edge of the wafer 4, and a circumferential gap between adjacent support sections 60 can provide a conduction channel for heat diffusion of the ceramic heating plate 31, so that the air temperature around the wafer 4 is more uniform; meanwhile, the support columns 402 can stably support the middle and the center of the wafer 4, so that the phenomenon that the center of the wafer 4 is recessed due to the fact that the center of the wafer is not supported under the action of gravity is avoided, and secondary warping of the wafer 4 is further avoided.
Example 3
The difference between embodiment 3 and embodiment 1 is substantially as shown in fig. 5, in which the supporting unit includes a plurality of first mounting posts 701 and a second mounting post 702 for supporting the wafer 4, the plurality of first mounting posts 701 are bonded to the edge of the ceramic heating plate 31, the plurality of first mounting posts 701 are circumferentially and uniformly disposed along the edge of the ceramic heating plate 31, the second mounting post 702 is bonded to the center of the ceramic heating plate 31, and the center of the circle surrounded by the plurality of first mounting posts 701 is in common with the center of the second mounting post 702.
When supporting wafer 4, a plurality of first erection columns 701 offset with the edge of wafer 4 for first erection column 701 can stably and evenly support the edge of wafer 4, and second erection column 702 can further support the center department of wafer 4, prevents the recessed phenomenon that appears in the center department of wafer 4 because the gravity effect that does not have the support and cause, further avoids wafer 4 warpage for a second time.
Example 4
As shown in fig. 6 and 7, the heating device further includes a slide rail 50 vertically and fixedly installed in the box body 1, a slide groove 501 with a cross section in a "T" shape is provided on the slide rail 50 along the axial direction thereof, and a plurality of scale marks 502 are provided on the slide rail 50 along the axial direction; the side wall of the ceramic heating plate 31 is fixedly provided with a sliding sheet 503 which can slide along the sliding rail 50 and can be locked, the sliding sheet 503 is made of a metal sheet, specifically, a metal sheet is prepared first, then, two ends of the metal sheet are bent twice respectively to obtain a symmetrical L-shaped structure, so that the cross section of the sliding sheet 503 is in an inverted n shape, the middle protruding portion of the sliding sheet 503 is fixedly connected with the edge of the ceramic heating plate 31 through a bolt or other modes, as shown in fig. 7, two ends of the upper side of the sliding sheet 503 are first bending sections, the lower side of the sliding sheet 503 is a second bending section, the first bending section of the sliding sheet 503 extends into the opening of the sliding groove 501 and abuts against two side walls of the opening of the sliding groove 501 by using elasticity brought by the L-shaped structure of the sliding sheet to achieve locking, and the second bending section is used for extending into the inside of the sliding groove 501 of the T-shaped sliding groove 501, so as to hook the inner wall of the sliding sheet 501 to prevent the sliding sheet 503 from separating from the sliding groove 501.
When the heating device for controlling wafer warping in the embodiment is used, the vertical distance between two adjacent ceramic heating plates 31 can be adjusted according to the thickness of a wafer 4, and the adjustment principle is as follows: by utilizing the elasticity of the L-shaped structure of the sliding sheet 503, the first bending sections of the L-shaped structures at the two ends of the sliding sheet 503 are pressed simultaneously and oppositely by hands or other tools to reduce the relative distance, so that the two first bending sections can no longer abut against the two side walls at the opening of the sliding groove 501 at the same time, and then the sliding sheet 503 can be moved vertically, and the ceramic heating plate 31 is driven to slide synchronously along the sliding rail 50, in the process, the scale mark 502 on the sliding rail 50 can be referred to, so as to realize the accurate adjustment of the position of the ceramic heating plate 31, the first bending sections of the L-shaped structures at the two ends of the sliding sheet 503 can be loosened after the target position is adjusted, the first bending sections are opened outwards again under the elastic action, and can abut against the two side walls at the opening of the sliding rail 50 again, so as to realize the fixation of the ceramic heating plate 31.
When placing wafer 4 on ceramic heating plate 31, the annular groove 404 department on the spacing ring 403 can carry on spacingly to wafer 4 for wafer 4 can install on ceramic heating plate 31 steadily, and wafer 4 contacts with first anti-skidding line and second anti-skidding line department, can ensure that wafer 4 is more stable after the installation.
Finally, it is noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that the technical solutions of the present invention can be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions of the present invention, which should be covered by the scope of the claims of the present invention.
Claims (10)
1. A heating device for controlling wafer warping comprises a box body and a first heater wrapped outside the box body, and is characterized in that the heating device further comprises:
the second heater comprises a plurality of heating plates which are arranged in the box body in parallel;
the supporting unit is arranged in the box body and used for supporting the wafer between two adjacent heating plates and enabling the distance between the wafer and the two adjacent heating plates to be equal;
the heating control module comprises a first temperature detection unit for detecting the temperature in the box body, a second temperature detection unit for detecting the temperature of the heating plate and a controller for controlling the first heater and the second heater;
wherein, the first heater, the first temperature detection unit, the second temperature detection unit and the heating plate are all electrically connected with the controller.
2. A heating apparatus for controlling wafer warpage as recited in claim 1, wherein said heating plates are each mounted horizontally within the housing.
3. A heating apparatus for controlling wafer warpage as claimed in claim 2, wherein the supporting unit comprises a supporting ring for supporting the edge of the wafer and a supporting pillar for supporting the center of the wafer, and both the supporting pillar and the supporting ring are fixedly mounted on the upper surface of the heating plate.
4. A heating apparatus for controlling wafer warpage as claimed in claim 2, wherein the supporting unit comprises a plurality of supporting pillars for supporting the wafer, the supporting pillars being uniformly and fixedly disposed on the upper surface of the heating plate.
5. A heating apparatus for controlling wafer warpage as claimed in claim 2, wherein the supporting unit comprises a supporting column for supporting a central region of the wafer and a plurality of supporting segments for supporting an edge of the wafer, the supporting segments being circumferentially distributed around the supporting column.
6. The heating apparatus for controlling wafer warpage as claimed in any one of claims 1 to 5, wherein the first temperature detecting unit includes a first temperature sensor, a plurality of first temperature sensing probes, and a plurality of first temperature sensing lines electrically coupled between the first temperature sensor and the plurality of first temperature sensing probes, respectively, the plurality of first temperature sensing probes extending into the interior of the chamber for detecting the temperature at each position of the interior of the chamber;
the second temperature detection unit comprises a second temperature sensor, a plurality of second temperature sensing probes and a plurality of second temperature sensing lines which are respectively and electrically connected between the second temperature sensor and the plurality of second temperature sensing probes, one part of the second temperature sensing probes are in sensing connection with the edge of the heating plate, and the other part of the second temperature sensing probes are in sensing connection with the center of the heating plate.
7. A heating device for controlling wafer warpage as claimed in any one of claims 1 to 5, wherein a retaining ring is fixedly mounted on the upper end face of the supporting unit, and an annular groove for wafer insertion is coaxially arranged on the upper end face of the retaining ring.
8. A heating apparatus for controlling wafer warpage as recited in claim 7, wherein the annular recess has a first anti-slip pattern on an inner wall thereof.
9. A heating apparatus for controlling wafer warpage as claimed in any one of claims 1 to 5, further comprising a sliding structure disposed vertically within the enclosure, the sliding structure comprising:
the sliding rail is vertically and fixedly arranged on the box body, and a plurality of scale marks are arranged on the sliding rail;
the sliding grooves are axially distributed on the sliding rails;
the sliding piece is fixedly installed on the side wall of the heating plate, and the sliding piece is connected with the sliding rail in a sliding mode and can be locked.
10. A heating apparatus for controlling wafer warpage as recited in claim 9, wherein the slider has an inverted "n" shaped cross section, and the slide rail has a slide groove with a "T" shaped cross section along an axial direction thereof, the metal sheet being capable of abutting against an inner wall of the slide groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222285892.7U CN218182172U (en) | 2022-08-30 | 2022-08-30 | Heating device for controlling wafer warping |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222285892.7U CN218182172U (en) | 2022-08-30 | 2022-08-30 | Heating device for controlling wafer warping |
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| Publication Number | Publication Date |
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| CN218182172U true CN218182172U (en) | 2022-12-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202222285892.7U Active CN218182172U (en) | 2022-08-30 | 2022-08-30 | Heating device for controlling wafer warping |
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- 2022-08-30 CN CN202222285892.7U patent/CN218182172U/en active Active
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