CN101399165A - Multi-sectorization hot disc structure - Google Patents
Multi-sectorization hot disc structure Download PDFInfo
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- CN101399165A CN101399165A CNA2007101572169A CN200710157216A CN101399165A CN 101399165 A CN101399165 A CN 101399165A CN A2007101572169 A CNA2007101572169 A CN A2007101572169A CN 200710157216 A CN200710157216 A CN 200710157216A CN 101399165 A CN101399165 A CN 101399165A
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Abstract
The invention relates to the processing technology of semiconductor wafer, in particular to a multi-partition hot plate structure, which solves the problems of bad temperature uniformity on the surface of the hot plate and not meeting the need of high-precision heating. The hot plate is provided with an upper plate, a lower plate and a heating sheet arranged between the upper plate and the lower plate, and the heating sheet is divided into a plurality of partitions, each of which is provided with an independent temperature sensor. As the invention is provided with one heating sheet which is divided into a plurality of partitions between the upper plate of the hot plate and a squash and each of the partitions is provided with the independent temperature sensor, the structure can be controlled by a controller which controls multi-channel heating and can ensure that conditions of the upper plate, thickness, processing precision, flatness, surface processing, materials, and the like, can meet the demand of temperature uniformity of the hot plate.
Description
Technical field
The present invention relates to processing technology of semiconductor wafer, specifically multi-sectorization hot disc structure.
Background technology
In the prior art, the heat dish all is by heating plate of folder in last dish and the compressing tablet, or imbedding several heating tubes in last dish constitutes, by the temperature of a temperature sensor and a controller control heat dish.Make that the uniformity of hot panel surface temperature is bad, can not satisfy the requirement of high accuracy heating.
Along with scientific and technological progress, the processing technology of wafer becomes increasingly complex, and the device that requirement is made in the unit wafer area is more, cause the width of circuit in the wafer to become narrower, cause in the processes process, when wafer heated on the heat dish, the uniformity requirement of temperature of heat plate was higher.
Summary of the invention
The object of the invention is to provide a kind of multi-sectorization hot disc structure, and the uniformity that solves hot panel surface temperature is bad, can not satisfy the problems such as requirement of high accuracy heating.
To achieve these goals, technical solution of the present invention is:
Multi-sectorization hot disc structure is provided with the heating plate that coils and be installed in the dish in the heat dish, and heating plate is divided into a plurality of districts, and each district is provided with independently temperature sensor.
Described multi-sectorization hot disc structure, heating plate are divided into the 6-12 district, and each district's power and area equate that there is independent zone in each district for wafer turnover direction, become left-right symmetric with wafer turnover direction.
Described multi-sectorization hot disc structure, heating plate three floor from outside to inside is divided into into 8 districts, outermost layer is a district, two districts, three districts, four districts, the intermediate layer is five districts, six districts, seven districts, internal layer is eight districts, each district's power and area equate that the top of heating plate is a wafer turnover direction, and there is independent zone in each district for wafer turnover direction.
Described multi-sectorization hot disc structure is provided with heating plate, aluminium compressing tablet, stainless steel compressing tablet from top to bottom successively in the last dish, heating plate, aluminium compressing tablet, stainless steel compressing tablet are fastening by the heating plate housing screw.
Described multi-sectorization hot disc structure, aluminium compressing tablet are one deck, and the stainless steel compressing tablet is two～three layers, and the multi partition heating plate is gone up the dish back by the fastening heat dish that closely is pressed onto of heating plate housing screw.
The lower wall of device during described multi-sectorization hot disc structure, the bottom of coiling on the heat dish are provided with and coil in the protection accompanies isolated hot pad between last dish and lower wall, following tray bottom is provided with ceramic dottle pin and isolating wire board successively.
Described multi-sectorization hot disc structure, the thickness 15～22mm of last dish, on coil the top surface plane degree between ± 0.01～± 0.08.
Described multi-sectorization hot disc structure, temperature sensor are the PT100 ceramic sintered bodies.
Described multi-sectorization hot disc structure, temperature sensor are installed to the central authorities in each district.
Described multi-sectorization hot disc structure, the junction in each district is provided with fixing hole.
The present invention has following beneficial effect:
1, the present invention is divided into a plurality of districts with heating plate, and each district's power and area are equated, and guarantees for wafer turnover direction independent zone is arranged, and becomes left-right symmetric with this direction.
2, the present invention also designs especially for the structure of last dish: use one deck aluminium flake and two～three layers of stainless steel substrates to fasten heating plate; and the bottom of coiling on heat dish design has lower wall protection device wherein, and the pad that accompanies the Teflon between last dish and lower wall is with isolated hot transmission.
3, among the present invention, the thickness of last dish guarantees the thickness of 15～22mm, too thin meeting causes temperature homogeneity bad, and too thick meeting causes control hysteresis, on coil the top surface plane degree should be between ± 0.01～± 0.08, flatness can make wafer and heat dish keep more uniform distance well, last panel surface is used aluminium alloy processing, and handle with hard anodizing on the surface, guarantees better temperature conduction and case hardness, and be convenient to cleaning, and material cost is also moderate.
4, temperature sensor of the present invention uses the non-armouring product of PT100, i.e. PT100 ceramic sintered bodies; PT100 armouring product can cause temperature sensing to be forbidden, react the situation that waits slowly.In last dish gauge hole, coat silica gel and insert the PT100 temperature sensor again, better contact with last dish to guarantee the PT100 temperature sensor, with sensing temperature that can be faster and better.
5, the present invention uses the controller that can control the multichannel heating temperature control, because this controller adopts the method for balance PID adjusting (in P, I, three parameters of D, P represents ratio, I represents integration, D represents differential) can reduce influencing each other of heating plate zones of different, make the more uniform temperature of whole heat dish and stable.
6, the present invention on the heat dish, coil and compressing tablet in sandwich the heating plate that a slice branch has a plurality of districts, and independently temperature sensor is arranged in each district design, control by the controller that can control the multichannel heating, and guarantee that the conditions such as thickness, machining accuracy, flatness, surface treatment and material that go up dish reach the inhomogeneity requirement of temperature of heat plate.
Description of drawings
Fig. 1 is an overall structure schematic diagram of the present invention.
Among the figure: the last dish of 1-; The 2-temperature sensor; The 3-heating plate; 4-aluminium compressing tablet; 5-stainless steel compressing tablet; The 6-lower wall; 7-pottery dottle pin; The 8-isolating wire board; 9-heating plate housing screw; The 10-pad.
The schematic diagram of Fig. 2 multi partition heating plate of the present invention.
Among the figure: 11-one district; 12-two districts; 13-three districts; 14-four districts; 15-five districts; 16-six districts; 17-seven districts; 18-eight districts; Power supply lead wire place, 19-one district; Power supply lead wire place, 20-two district; Power supply lead wire place, 21-three district; Power supply lead wire place, 22-four district; Power supply lead wire place, 23-five district; Power supply lead wire place, 24-six district; Power supply lead wire place, 25-seven district; Power supply lead wire place, 26-eight district; 27-temperature sensor installing hole; The 28-fixing hole.
Embodiment
Below in conjunction with drawings and Examples the present invention is described in detail.
As shown in Figure 1, present embodiment is the octant hot disc structure, be provided with dish 1, temperature sensor 2, heating plate 3, aluminium compressing tablet 4, stainless steel compressing tablet 5, lower wall 6, ceramic dottle pin 7, isolating wire board 8, heating plate housing screw 9, pad 10, be provided with heating plate 3, aluminium compressing tablet 4, stainless steel compressing tablet 5 in the last dish 1 from top to bottom successively, heating plate 3, aluminium compressing tablet 4, stainless steel compressing tablet 5 is fastening by heating plate housing screw 9, heating plate 3 is octant heating plate (Fig. 2), and each district is connected with independently temperature sensor 2.
Special structural design for last dish 1; use layer of aluminum compressing tablet 4 and two～three layers of stainless steel compressing tablet 5 and heating plate housing screw 9 that multi partition heating plate 3 closely is pressed onto the heat dish and go up dish 1 back; and the bottom design of dish 1 has lower wall 6 protections device wherein on the heat dish; accompany the transmission of Teflon pad 10 with isolated heat between last dish 1 and lower wall 6, lower wall 6 bottoms are provided with ceramic dottle pin 7 and isolating wire board 8 successively.
On dish 1 on the heat dish, in each district's design independently PT100 temperature sensor 2 is arranged according to multi partition heating plate partitioned mode, by controlling controller (the common commercial product of multichannel heating, as the EJ1G type multichannel heating and temperature control device that can produce for: Omron (China) Co., Ltd.) control, reach the inhomogeneity requirement of temperature of heat plate.
As shown in Figure 2, the present invention is divided into a plurality of districts with heating plate, specifically with heating plate 3 from outside to inside three floor be divided into into 8 districts, outermost layer is a district 11, two districts 12, three districts 13, four districts 14, the intermediate layer is five districts 15, six districts 16, seven districts 17, internal layer is that 18,8 districts, eight districts are provided with power supply lead wire place, a district 19, power supply lead wire place, two districts 20, power supply lead wire place, three districts 21, power supply lead wire place, four districts 22, power supply lead wire place, five districts 23, power supply lead wire place, six districts 24, power supply lead wire place, seven districts 25, power supply lead wire place, eight districts 26 respectively; Each district's power and area are equated, the top of heating plate 3 is a wafer turnover direction, and guarantees for wafer turnover direction independent zone is arranged, be the 11 He Wu districts 15, a district among Fig. 2, and become left-right symmetric, two districts, 12 He Si districts, 14 symmetries, six districts 16 and seven districts, 17 symmetries with this direction.The central authorities in each district are temperature sensor installing hole 27, and the junction in each district is provided with fixing hole 28, pass fixing hole 28 by heating plate housing screw 9, and heating plate 3, aluminium compressing tablet 4, stainless steel compressing tablet 5 is fastening.
Claims (10)
1, multi-sectorization hot disc structure is provided with the heating plate that coils and be installed in the dish in the heat dish, and it is characterized in that: heating plate is divided into a plurality of districts, and each district is provided with independently temperature sensor.
2, according to the described multi-sectorization hot disc structure of claim 1, it is characterized in that: heating plate is divided into the 6-12 district, and each district's power and area equate that there is independent zone in each district for wafer turnover direction, become left-right symmetric with wafer turnover direction.
3, according to the described multi-sectorization hot disc structure of claim 1, it is characterized in that: heating plate three floor from outside to inside is divided into into 8 districts, outermost layer is a district, two districts, three districts, four districts, the intermediate layer is five districts, six districts, seven districts, internal layer is eight districts, each district's power and area equate that the top of heating plate is a wafer turnover direction, and there is independent zone in each district for wafer turnover direction.
4, according to the described multi-sectorization hot disc structure of claim 1, it is characterized in that: go up in the dish and be provided with heating plate, aluminium compressing tablet, stainless steel compressing tablet from top to bottom successively, heating plate, aluminium compressing tablet, stainless steel compressing tablet are fastening by the heating plate housing screw.
5, according to the described multi-sectorization hot disc structure of claim 4, it is characterized in that: the aluminium compressing tablet is one deck, and the stainless steel compressing tablet is two～three layers, and the multi partition heating plate is gone up the dish back by the fastening heat dish that closely is pressed onto of heating plate housing screw.
6, according to the described multi-sectorization hot disc structure of claim 1, it is characterized in that: the lower wall of device during the bottom of coiling on the heat dish is provided with and coils in the protection, between last dish and lower wall, accompany isolated hot pad, following tray bottom is provided with ceramic dottle pin and isolating wire board successively.
7, according to the described multi-sectorization hot disc structure of claim 1, it is characterized in that: go up the thickness 15～22mm of dish, on coil the top surface plane degree between ± 0.01～± 0.08.
8, according to the described multi-sectorization hot disc structure of claim 1, it is characterized in that: temperature sensor is the PT100 ceramic sintered bodies.
9, according to the described multi-sectorization hot disc structure of claim 1, it is characterized in that: temperature sensor is installed to the central authorities in each district.
10, according to the described multi-sectorization hot disc structure of claim 1, it is characterized in that: the junction in each district is provided with fixing hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101572169A CN101399165A (en) | 2007-09-29 | 2007-09-29 | Multi-sectorization hot disc structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101572169A CN101399165A (en) | 2007-09-29 | 2007-09-29 | Multi-sectorization hot disc structure |
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| CN101399165A true CN101399165A (en) | 2009-04-01 |
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| CNA2007101572169A Pending CN101399165A (en) | 2007-09-29 | 2007-09-29 | Multi-sectorization hot disc structure |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102278890A (en) * | 2011-08-18 | 2011-12-14 | 苏州大学 | Electric heating furnace |
| CN102485935A (en) * | 2010-12-06 | 2012-06-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Vapor chamber and substrate processing equipment applied with the vapor chamber |
| CN102781123A (en) * | 2011-05-11 | 2012-11-14 | 中国科学院沈阳自动化研究所 | Wafer-baking hot plate used for integrated circuit |
| CN103760753A (en) * | 2013-12-31 | 2014-04-30 | 深圳市华星光电技术有限公司 | Substrate roasting device and temperature adjustment method thereof |
| CN105630024A (en) * | 2014-10-29 | 2016-06-01 | 李东明 | Structure for increasing the number of independent temperature control areas in photoresistive pre-baking oven |
| CN105630025A (en) * | 2014-10-29 | 2016-06-01 | 李东明 | Photoresistive pre-baking oven heater temperature control device |
| CN110707035A (en) * | 2019-10-16 | 2020-01-17 | 北京北方华创微电子装备有限公司 | Electrostatic chuck, semiconductor processing chamber and apparatus |
| CN116110829A (en) * | 2023-03-02 | 2023-05-12 | 合肥开悦半导体科技有限公司 | Hot plate for heating by utilizing metallic tin |
| WO2024000285A1 (en) * | 2022-06-29 | 2024-01-04 | 沈阳芯源微电子设备股份有限公司 | Semiconductor substrate heating apparatus, semiconductor device, and temperature control method |
-
2007
- 2007-09-29 CN CNA2007101572169A patent/CN101399165A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102485935A (en) * | 2010-12-06 | 2012-06-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Vapor chamber and substrate processing equipment applied with the vapor chamber |
| CN102485935B (en) * | 2010-12-06 | 2013-11-13 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Vapor chamber and substrate processing equipment applied with the vapor chamber |
| CN102781123A (en) * | 2011-05-11 | 2012-11-14 | 中国科学院沈阳自动化研究所 | Wafer-baking hot plate used for integrated circuit |
| CN102278890A (en) * | 2011-08-18 | 2011-12-14 | 苏州大学 | Electric heating furnace |
| CN102278890B (en) * | 2011-08-18 | 2014-04-09 | 苏州大学 | Electric heating furnace |
| WO2015100818A1 (en) * | 2013-12-31 | 2015-07-09 | 深圳市华星光电技术有限公司 | Substrate baking apparatus and temperature regulation method therefor |
| CN103760753A (en) * | 2013-12-31 | 2014-04-30 | 深圳市华星光电技术有限公司 | Substrate roasting device and temperature adjustment method thereof |
| CN103760753B (en) * | 2013-12-31 | 2017-04-12 | 深圳市华星光电技术有限公司 | Substrate roasting device and temperature adjustment method thereof |
| CN105630024A (en) * | 2014-10-29 | 2016-06-01 | 李东明 | Structure for increasing the number of independent temperature control areas in photoresistive pre-baking oven |
| CN105630025A (en) * | 2014-10-29 | 2016-06-01 | 李东明 | Photoresistive pre-baking oven heater temperature control device |
| CN110707035A (en) * | 2019-10-16 | 2020-01-17 | 北京北方华创微电子装备有限公司 | Electrostatic chuck, semiconductor processing chamber and apparatus |
| WO2024000285A1 (en) * | 2022-06-29 | 2024-01-04 | 沈阳芯源微电子设备股份有限公司 | Semiconductor substrate heating apparatus, semiconductor device, and temperature control method |
| CN116110829A (en) * | 2023-03-02 | 2023-05-12 | 合肥开悦半导体科技有限公司 | Hot plate for heating by utilizing metallic tin |
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Open date: 20090401 |