CN102781123A - Wafer-baking hot plate used for integrated circuit - Google Patents
Wafer-baking hot plate used for integrated circuit Download PDFInfo
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- CN102781123A CN102781123A CN2011101204002A CN201110120400A CN102781123A CN 102781123 A CN102781123 A CN 102781123A CN 2011101204002 A CN2011101204002 A CN 2011101204002A CN 201110120400 A CN201110120400 A CN 201110120400A CN 102781123 A CN102781123 A CN 102781123A
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- hot plate
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- heated filament
- temperature sensor
- plate body
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Abstract
The invention discloses a wafer-baking hot plate used for an integrated circuit. Two groups of hot wires and two groups of temperature sensors are embedded in a hot plate. Respective control can be carried out through the feedback of the temperature sensors according to the target temperature needing to be reached, and thus the temperatures at the edge part and the center part of the hot plate can be consistent; the defect that the temperature at the edge part of the hot plate is lower than that at the center part of the hot plate during a baking process is overcome; the respective control can be carried out by embedding the two groups of the hot wires and the two groups of the temperature sensors in the hot plate; and the temperature uniformity of the hot plate can be increased through the method.
Description
Technical field
The present invention relates to a kind of hot plate that IC wafers cures that is used for.
Background technology
In the large scale integrated circuit manufacturing industry, people are carved into intensive electronic circuit on the wafer through photoetching process.In this technical process, come wafer is cured processing through hot plate.The temperature homogeneity on hot plate surface is the technical indicator of a key.Especially the temperature homogeneity on hot plate surface is particularly important in preceding baking, back baking operation.Because photoresist suffered tension force and chemical substance in the photoresist in curing is responsive to temperature altitude in process engineering, the temperature homogeneity on hot plate surface will produce very big influence to the electronic circuit width of portraying on the wafer.So the hot plate of surface temperature uniformity is the necessary link that guarantees photoetching process quality in the large scale integrated circuit manufacturing during heating.Simultaneously along with the increasing of integrated circuit integrated level, the dwindling day by day of live width, the inhomogeneity raising of hot plate surface temperature also is the needs of the more intensive electronic circuit of photoetching on wafer.Be used for the heat-transfer sheet modules that wafer cures, generally be employed in the hot plate and place heating wire and heat, through the temperature sensor control temperature on hot plate surface.Cure in the application process actual at present, the uniformity of hot plate temperature mainly shows as the temperature difference of hot plate margin and center part.The easier ambient conduction in hot plate marginal portion heat when temperature is high more causes the temperature of hot plate marginal portion to be lower than centric temperature partly.
Summary of the invention
For overcoming above-mentioned deficiency, the purpose of this invention is to provide through arrange hot plate with mode of heating of a kind of new heated filament and be used for wafer and cure.
For solving the problems of the technologies described above, the technical scheme that the present invention adopted is: at first in hot plate, embed two groups of heated filaments and temperature sensor, the marginal portion and the core of hot plate are controlled respectively.The different heat conduction amounts of the two groups of heated filaments of FEEDBACK CONTROL through temperature sensor respectively for target temperature make the temperature of whole hot plate consistent.Thereby avoid that hot plate marginal portion temperature is lower than this disadvantage of hot plate core in the process of curing.Improve the temperature homogeneity on hot plate surface.
Be specially:
A kind ofly be used for the hot plate that IC wafers cures, comprise plate body, be embedded with the first group of heated filament and first temperature sensor at said plate body, the edge of hot plate is embedded with the second group of heated filament and second temperature sensor at all edges of hot plate.
Two groups of heated filaments that said plate body is embedded in are on the same cross section, and this cross section is parallel with the plate body upper surface, and said two groups of heated filaments are meant first group of heated filament and second group of heated filament;
Wherein second group of heated filament is distributed in the edge in plate body cross section, and first group of heated filament is distributed in the plate body section edges with interior zone.
Said first temperature sensor and second temperature sensor are located at the interior position near the plate body upper surface of plate body;
The heating-up temperature that first temperature sensor that is embedded with at plate body and second temperature sensor reflect first group of heated filament and second group of heated filament respectively;
The position of the first temperature sensor setting is close to first group of residing position of heated filament;
The position of the second temperature sensor setting is close to second group of residing position of heated filament.
Saidly be used for the hot plate that IC wafers cures and also include a temperature controller; Its signal input part is connected to the feedback signal of first temperature sensor and second temperature sensor, and the control output end of temperature controller is connected to the control loop of first group of heated filament and second group of heated filament respectively.
Said hot plate is controlled respectively target temperature with temperature sensor through two groups of heated filaments that embed, and the marginal portion of hot plate and core pass through heated filament and temperature sensor respectively and feed back, and control with temperature controller.
Said first group of heated filament planar spiral that the inner arrangement mode of plate body extends for mind-set outer rim therefrom gradually, three-back-shaped or arc in a kind of or combination more than two kinds.
Said second group of heated filament is identical with the shape of hot plate at the inner arrangement mode of plate body, puts along the edge ring winding of hot plate.
The invention has the beneficial effects as follows:
1. the present invention avoids curing at hot plate that hot plate marginal portion temperature is lower than this disadvantage of hot plate core in the process, improves the temperature homogeneity on hot plate surface.
2. improvement part of the present invention has the installation of being prone to, and is easy to control, the characteristics that cost is low.
Description of drawings
Fig. 1 is a heat-transfer sheet modules vertical section structure sketch map of the present invention.
Fig. 2 is the heated filament of the hot plate schematic diagram of arranging.
Embodiment
Below in conjunction with accompanying drawing structure of the present invention and operation principle thereof are done further explain.
As depicted in figs. 1 and 2, a kind ofly be used for the hot plate that IC wafers cures, comprise circular plate body 5, be embedded with the first group of heated filament 1 and first temperature sensor 3 at said plate body 5,
The edge of hot plate is embedded with the second group of heated filament 2 and second temperature sensor 4 at all edges of hot plate.
Two groups of heated filaments that said plate body 5 is embedded in are on the same cross section, and this cross section is parallel with the plate body upper surface, and said two groups of heated filaments are meant first group of heated filament 1 and second group of heated filament 2;
Wherein second group of heated filament 2 is distributed in the edge in plate body cross section, and first group of heated filament 1 is distributed in the plate body section edges with interior zone.
Said first temperature sensor 3 and second temperature sensor 4 are located at plate body 5 interior positions near plate body 5 upper surfaces; The heating-up temperature that first temperature sensor 3 that is embedded with at plate body 5 and second temperature sensor 4 reflect first group of heated filament 1 and second group of heated filament 2 respectively; The position that first temperature sensor 3 is provided with is close to first group of heated filament, 1 residing position; The position that second temperature sensor 4 is provided with is close to second group of heated filament, 2 residing positions.
Saidly be used for the hot plate that IC wafers cures and also include a temperature controller; Its signal input part is connected to the feedback signal of first temperature sensor 3 and second temperature sensor 4, and the control output end of temperature controller is connected to the control loop of first group of heated filament 1 and second group of heated filament 2 respectively.
The spirality that said first group of heated filament 1 extends for mind-set outer rim therefrom at the inner arrangement modes of plate body 5 gradually.Said second group of heated filament 2 is circular at plate body 5 inner arrangement modes, puts along the edge ring winding of hot plate.
The present invention has overcome hot plate marginal portion temperature effectively and has been lower than hot plate core drawback, in the baking process of IC wafers, has higher utility.
Claims (7)
1. one kind is used for the hot plate that IC wafers cures, and comprises plate body (5), is embedded with first group of heated filament (1) and first temperature sensor (3) at said plate body (5), it is characterized in that:
The edge of hot plate is embedded with second group of heated filament (2) and second temperature sensor (4) at all edges of hot plate.
2. according to the said hot plate of claim 1, it is characterized in that:
Two groups of heated filaments that said plate body (5) is embedded in are on the same cross section, and this cross section is parallel with the plate body upper surface, and said two groups of heated filaments are meant first group of heated filament (1) and second group of heated filament (2),
Wherein second group of heated filament (2) is distributed in the edge in plate body cross section, and first group of heated filament (1) is distributed in the plate body section edges with interior zone.
3. according to the said hot plate of claim 1, it is characterized in that:
Said first temperature sensor (3) and second temperature sensor (4) are located at the interior position near plate body (5) upper surface of plate body (5);
The heating-up temperature that first temperature sensor (3) that is embedded with at plate body (5) and second temperature sensor (4) reflect first group of heated filament (1) and second group of heated filament (2) respectively;
The position that first temperature sensor (3) is provided with is close to the residing position of first group of heated filament (1);
The position that second temperature sensor (4) is provided with is close to the residing position of second group of heated filament (2).
4. according to claim 1,2 or 3 said hot plates, it is characterized in that:
Saidly be used for the hot plate that IC wafers cures and also include a temperature controller; Its signal input part is connected to the feedback signal of first temperature sensor (3) and second temperature sensor (4), and the control output end of temperature controller is connected to the control loop of first group of heated filament (1) and second group of heated filament (2) respectively.
5. according to the said hot plate of claim 4, it is characterized in that:
Said hot plate is controlled respectively target temperature with temperature sensor through two groups of heated filaments that embed, and the marginal portion of hot plate and core pass through heated filament and temperature sensor respectively and feed back, and control with temperature controller.
6. according to the said hot plate of claim 1, it is characterized in that:
Said first group of heated filament (1) spirality that the inner arrangement mode of plate body (5) extends for mind-set outer rim therefrom gradually, three-back-shaped or arc in a kind of or combination more than two kinds.
7. according to the said hot plate of claim 1, it is characterized in that:
Said second group of heated filament (2) is identical with the shape of hot plate at the inner arrangement mode of plate body (5), puts along the edge ring winding of hot plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101204002A CN102781123A (en) | 2011-05-11 | 2011-05-11 | Wafer-baking hot plate used for integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101204002A CN102781123A (en) | 2011-05-11 | 2011-05-11 | Wafer-baking hot plate used for integrated circuit |
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| Publication Number | Publication Date |
|---|---|
| CN102781123A true CN102781123A (en) | 2012-11-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101204002A Pending CN102781123A (en) | 2011-05-11 | 2011-05-11 | Wafer-baking hot plate used for integrated circuit |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1601732A (en) * | 2003-09-25 | 2005-03-30 | Smc株式会社 | Temp regulator of semiconductor substrate |
| CN101399165A (en) * | 2007-09-29 | 2009-04-01 | 沈阳芯源微电子设备有限公司 | Multi-sectorization hot disc structure |
| JP2009218449A (en) * | 2008-03-11 | 2009-09-24 | Tokyo Electron Ltd | Mounting base structure, and heat treatment device |
| CN101906622A (en) * | 2010-08-20 | 2010-12-08 | 华晟光电设备(香港)有限公司 | Device and method for controlling temperature and uniformity of epitaxial wafers in MOCVD system |
-
2011
- 2011-05-11 CN CN2011101204002A patent/CN102781123A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1601732A (en) * | 2003-09-25 | 2005-03-30 | Smc株式会社 | Temp regulator of semiconductor substrate |
| CN101399165A (en) * | 2007-09-29 | 2009-04-01 | 沈阳芯源微电子设备有限公司 | Multi-sectorization hot disc structure |
| JP2009218449A (en) * | 2008-03-11 | 2009-09-24 | Tokyo Electron Ltd | Mounting base structure, and heat treatment device |
| CN101906622A (en) * | 2010-08-20 | 2010-12-08 | 华晟光电设备(香港)有限公司 | Device and method for controlling temperature and uniformity of epitaxial wafers in MOCVD system |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20121114 |