CN202093316U - Baking device - Google Patents
Baking device Download PDFInfo
- Publication number
- CN202093316U CN202093316U CN2011201812959U CN201120181295U CN202093316U CN 202093316 U CN202093316 U CN 202093316U CN 2011201812959 U CN2011201812959 U CN 2011201812959U CN 201120181295 U CN201120181295 U CN 201120181295U CN 202093316 U CN202093316 U CN 202093316U
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- gas
- air
- curing range
- plate
- shell
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Abstract
The utility model relates to a baking device which is used for wafer baking after exposure in a photoetching process, and comprises an outer shell, a hot plate, an air diffusion plate, a vent pipeline and an air heating device; the hot plate is arranged in the outer shell; the air diffusion plate is fixed on the outer shell, and is provided with a plurality of vent holes; the vent pipeline passes through the outer shell; a port on one end of the vent pipeline is arranged above the air diffusion plate, and the other end of the vent pipeline is communicated with an external air supply source; and the air heating device is arranged on the vent pipeline outside the outer shell. The baking device pre-heats the air which is fed into the baking device and diffuses the air at a certain high temperature into uniform multi-air flow through the air diffusion plate, so that the exchange range between the air and the ambient temperature is reduced, the ambient temperature is stable, uniform and consistent, the heating uniformity and consistency of an adhesive graphic photoetched on the surface of a wafer are improved, and the process quality is also improved.
Description
Technical field
The utility model relates to integrated circuit and makes the photoetching process field, relates in particular to a kind of curing range that photoetching process exposure back wafer cures that is used for.
Background technology
In the semiconductor technology processing procedure, adopt photoetching process to make the patterned process of photoresist, usually after the photoresist on the wafer is exposed, also need to carry out post exposure bake (PEB, Post Exposure Bake), the purpose of carrying out post exposure bake mainly contains the following aspects: at first be the catalytic reaction of further activation light acid to resin; Secondly in order to consolidate photoresist, to improve the ability of photoresist at particle injection or etching protection lower surface; Once more in order further to reduce standing wave effect (Standing Wave Effect).At present, baking process after exposing for photoresist has become a kind of actual process standard, being used to the curing range that cures in the photoetching process has very strict requirement to the homogeneity of wafer temperature, finally to the homogeneity and the device performance important influence of the critical size (CD) of litho pattern.
Raising along with technology and production level, the size of wafer is increasing, number of chips is more and more on the single wafer, so the stability of temperature and homogeneity have even more important influence to final homogeneity and the device performance to the size (CD) of litho pattern in the curing range, thereby more and more higher to the requirement of curing range.Curing range is often inhomogeneous in to wafer heating process in the prior art, feeds gas and wafer generation heat interchange, influences the consistance of wafer.
The utility model content
The technical problems to be solved in the utility model is to provide a kind of curing range that is used for photoetching process, to improve the homogeneity and the stability of stoving temperature.
For addressing the above problem, the utility model provides a kind of curing range, is used for photoetching process exposure back wafer and cures, and comprises shell; Hot plate is arranged in the shell, and described wafer is arranged at described hot plate top; Diffusing gas plate is fixed in the top of wafer described in the shell, and described diffusing gas plate is provided with a plurality of ventilation holes; Vent line passes described shell, and an end port is positioned at described diffusing gas plate top, and the other end is communicated with the extraneous gas source of supply; Gas-heating apparatus is arranged on the outer described vent line of described shell.
Further, the shape and size of described diffusing gas plate and described shell are suitable.
Further, described diffusing gas plate and described shell are fixed by fixture.
Further, also be provided with the Temperature Feedback control device on the described hot plate.
Further, also be provided with one-way cock on the described vent line.
Further, described hot plate is an aluminium nitride material.
Further, the gas that contains of extraneous gas source of supply is dry air or nitrogen.
In sum, the utility model provides curing range that the gas that feeds in the curing range is preheated, and in curing range certain high-temperature gas, the gas plate is uniform many air-flows with gas dispersion by loosing, thereby reduce gas and environment temperature exchange amplitude, make environment temperature stable and uniform consistance, and then improve the being heated evenly property and the consistance of crystal column surface photoresist figure, improve processing quality.
Description of drawings
Fig. 1 is the structure cut-open view of curing range among the utility model one embodiment.
Fig. 2 is the vertical view of diffusing gas plate among the utility model one embodiment.
Embodiment
For making content of the present utility model clear more understandable,, content of the present utility model is described further below in conjunction with Figure of description.Certainly the utility model is not limited to this specific embodiment, and the known general replacement of those skilled in the art also is encompassed in the protection domain of the present utility model.
Secondly, the utility model utilizes synoptic diagram to carry out detailed statement, and when the utility model example was described in detail in detail, for convenience of explanation, synoptic diagram did not amplify according to general ratio is local, should be with this as to qualification of the present utility model.
The utility model is by providing a kind of curing range, the gas that feeds in the curing range is heated, certain high-temperature gas in curing range, and be uniform many air-flows with gas dispersion by the gas plate that looses, reduce to feed the temperature exchange of gas and curing range inner chamber environment, make environment temperature stable and uniform consistance, and then improve the being heated evenly property and the consistance of crystal column surface photoresist figure, improve processing quality.
Fig. 1 is the structure cut-open view of curing range among the utility model one embodiment, and as shown in Figure 1, the curing range that is used for photoetching process in the utility model comprises shell 101, hot plate 103, gas plate 107, vent line 111 and gas-heating apparatus 113 loose.Wherein, described hot plate 103, the gas plate 107 that looses are arranged in the shell 101; Described wafer 105 is arranged at described hot plate 103 tops; Described diffusing gas plate 107 is fixed in the top of wafer 105 in the shell 101; Described vent line 111 passes described shell 101, one end ports and is positioned at described diffusing gas plate 107 tops, and the other end is communicated with extraneous gas source of supply 109; Described gas-heating apparatus 113 is arranged on the described shell 101 described vent line 111 outward.
Because described gas-heating apparatus 113 is arranged on the vent line 111, the gas heating that extraneous gas source of supply 109 can be provided, the chamber that then feeds in the shell 101 is a high-temperature gas, avoid the chamber generation localized heat exchange of cryogenic gas in shell, improve the homogeneity of shell 101 middle chamber internal temperatures, thereby improve the consistance of curing process temperature.Also be provided with one-way cock 121 on the described vent line 111, the flow that described one-way cock can pilot-gas, thereby according to the influx of the chamber temp adjustments of gas of shell 101.
Wherein, the gas that extraneous gas source of supply 109 provides is preferably dry air or nitrogen, and above-mentioned two kinds of gases are semiconductor technology processing procedure common gas, and can not cause damage to curing range or wafer to be heated.In addition, what the gas temperature after 113 heating of process gas-heating apparatus was preferable is 50～100 ℃, and the flow that feeds gas is preferably 0.1～20L/min.
In the present embodiment, the quantity of described hot plate 103 can be one, and wafer 105 to be cured is positioned over hot plate 103 tops and is heated.The material of described hot plate 103 can be selected aluminium nitride, and aluminium nitride is Homogeneouslly-radiating in heating process, thereby reaches the purpose that is heated evenly equally.
Further, also be provided with Temperature Feedback control device 115 on the described hot plate 103, described Temperature Feedback control device 115 comprises temperature-detecting device and feed back control system (not indicating among the figure), measure the temperature of hot plate 103 inner cavity chamber by temperature-detecting device, when temperature exceeds preset range, start feed back control system and change hot plate temperature, hot plate 103 temperature are done with corresponding adjusting, keep the stability and the homogeneity of hot plate 103 temperature.
In the present embodiment, described diffusing gas plate 107 is fixed on the shell 101, and it is suitable with the shape and size of described shell 101, fixing by fixture 119, wherein fixture 119 can or be inserted and fasten part for screw, the material of described diffusing gas plate 107 can be teflon, and teflon is the heat resisting corrosion-proof corrosion material, cures in the process at high temperature and can not cure wafer 105 to band and cause damage or bring impurity into; Described diffusing gas plate 107 be positioned at described vent line 111 below the port of shell 101 inside and described hot plate 103 above.
Fig. 2 is the brief configuration synoptic diagram of curing range among another embodiment of the utility model.As shown in Figure 2, described diffusing gas plate 107 is provided with a plurality of ventilation holes 107a, the gas that vent line 111 feeds is separated into a plurality of air-flows by the ventilation holes 107a on the gas plate 107 that looses, gas dispersion is driven into into shell 101 gas inside, and be separated into a plurality of air-flows equably with the contacting of wafer 105, thereby improve the heat radiation homogeneity, keep shell 101 temperature inside consistance.
In sum, the curing range that the utility model provides preheats the gas that feeds in the curing range, and in curing range certain high-temperature gas, the gas plate is uniform many air-flows with gas dispersion by loosing, thereby reduce gas and environment temperature exchange amplitude, make environment temperature stable and uniform consistance, and then improve the being heated evenly property and the consistance of crystal column surface photoresist figure, improve processing quality.
Though the utility model discloses as above with preferred embodiment; right its is not in order to limit the utility model; have in the technical field under any and know the knowledgeable usually; in not breaking away from spirit and scope of the present utility model; when doing a little change and retouching, therefore protection domain of the present utility model is as the criterion when looking claims person of defining.
Claims (7)
1. a curing range is used for photoetching process exposure back wafer and cures, and it is characterized in that, comprising:
Shell;
Hot plate is arranged in the described shell, and wafer is arranged at described hot plate top;
The gas plate that looses is arranged in the described shell and is positioned at described wafer top, and described diffusing gas plate is provided with a plurality of ventilation holes;
Vent line passes described shell, and one end port is positioned at described diffusing gas plate top, and the other end is communicated with an extraneous gas source of supply;
Gas-heating apparatus, it is outer and be positioned on the described vent line to be arranged at described shell.
2. curing range as claimed in claim 1 is characterized in that the shape and size of described diffusing gas plate and described shell are suitable.
3. curing range as claimed in claim 1 or 2 is characterized in that, described diffusing gas plate and described shell are fixed by fixture.
4. curing range as claimed in claim 1 is characterized in that, also is provided with the Temperature Feedback control device on the described hot plate.
5. curing range as claimed in claim 1 is characterized in that, also is provided with one-way cock on the described vent line.
6. curing range as claimed in claim 1 is characterized in that, the material of described hot plate is an aluminium nitride.
7. curing range as claimed in claim 1 is characterized in that, the gas that described extraneous gas source of supply provides is dry air or nitrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201812959U CN202093316U (en) | 2011-05-31 | 2011-05-31 | Baking device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201812959U CN202093316U (en) | 2011-05-31 | 2011-05-31 | Baking device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202093316U true CN202093316U (en) | 2011-12-28 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011201812959U Expired - Fee Related CN202093316U (en) | 2011-05-31 | 2011-05-31 | Baking device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202093316U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102541119A (en) * | 2012-01-18 | 2012-07-04 | 上海华力微电子有限公司 | Temperature control method for hot plate |
| CN103088413A (en) * | 2013-01-29 | 2013-05-08 | 杭州士兰明芯科技有限公司 | Etching and roasting equipment |
| CN103088412A (en) * | 2013-01-29 | 2013-05-08 | 杭州士兰明芯科技有限公司 | Reaction furnace of etching roasting equipment |
| CN107357139A (en) * | 2017-08-01 | 2017-11-17 | 深圳市华星光电技术有限公司 | The gas extraction system and its governor motion of developing apparatus |
-
2011
- 2011-05-31 CN CN2011201812959U patent/CN202093316U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102541119A (en) * | 2012-01-18 | 2012-07-04 | 上海华力微电子有限公司 | Temperature control method for hot plate |
| CN103088413A (en) * | 2013-01-29 | 2013-05-08 | 杭州士兰明芯科技有限公司 | Etching and roasting equipment |
| CN103088412A (en) * | 2013-01-29 | 2013-05-08 | 杭州士兰明芯科技有限公司 | Reaction furnace of etching roasting equipment |
| CN103088412B (en) * | 2013-01-29 | 2015-11-18 | 杭州士兰明芯科技有限公司 | The reacting furnace of etching roasting plant |
| CN103088413B (en) * | 2013-01-29 | 2015-11-18 | 杭州士兰明芯科技有限公司 | Etching roasting plant |
| CN107357139A (en) * | 2017-08-01 | 2017-11-17 | 深圳市华星光电技术有限公司 | The gas extraction system and its governor motion of developing apparatus |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION Effective date: 20130422 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20130422 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone, Beijing Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111228 Termination date: 20180531 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |