CN206194704U - Even heating device of wafer - Google Patents
Even heating device of wafer Download PDFInfo
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- CN206194704U CN206194704U CN201621164118.9U CN201621164118U CN206194704U CN 206194704 U CN206194704 U CN 206194704U CN 201621164118 U CN201621164118 U CN 201621164118U CN 206194704 U CN206194704 U CN 206194704U
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- power density
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Abstract
The utility model relates to an integrated circuit selects separately the field, and the purpose provides an even heating device of wafer. An even heating device of wafer, includes: the sucking disc, the heater, the sucking disc to be equipped with the power density of the coaxial setting of a plurality of regional, the regional power density of power density who is located the outside is greater than the power density who is located inboard power density region, the heater includes: upper end and sucking disc lower extreme laminating and the mounting disc of being connected, by generating heat the drum around the dish that generates heat that constitutes and be located the mounting disc downside, it generates heat to push down coils just the pressure disk of being connected with the sucking disc lower extreme, the interval of two ring adjacent lines that generate heat of dish of generating heat is diminished to the periphery by the center gradually, generate heat the power of dish by center to periphery grow gradually. The temperature at sucking disc center is even with the temperature in the outside during this even heating device of wafer heating, and the surface of the suction cup difference in temperature is less than 1 DEG C that sets for the temperature, improves integrated circuit wafer high temperature test precision.
Description
Technical field
The utility model is related to integrated circuit to sort field, especially a kind of wafer uniform heater.
Background technology
Wafer refers to the silicon wafer used by silicon semiconductor production of integrated circuits, and it is shaped as circle；Wafer pyrometer is tested
One critical processes of integrated circuit industry, bad chip can be in advance rejected by strict high temperature test, reduce follow-up high
Packaging cost.Wafer heating device is provided with sucker and heater, and wafer passes through vacuum suction in chuck surface during high temperature test；
To ensure wafer pyrometer measuring accuracy, it is desirable to which the temperature control of whole chuck surface each point is in the range of design temperature ± 1 DEG C；
The temperature of the temperature more than outside at sucker center when traditional use mica heating plate, heater of silica gel heating sheet is in the presence of heating
Degree, the chuck surface temperature difference is larger, reduces the deficiency of IC wafers high temperature test precision；Therefore, inhaled when designing a kind of heating
The temperature of disk center is uniform with the temperature in outside, and the chuck surface temperature difference is controlled in the range of 1 DEG C, improves IC wafers high
The wafer uniform heater of warm measuring accuracy, as problem demanding prompt solution.
Utility model content
The purpose of this utility model is to overcome the heater of current use mica heating plate, silica gel heating sheet to exist
The temperature at sucker center is more than the temperature in outside during heating, and the chuck surface temperature difference is larger, reduces IC wafers high temperature test
The deficiency of precision, there is provided the temperature at sucker center is uniform with the temperature in outside during a kind of heating, controls in the range of 1 DEG C, carries
The wafer uniform heater of high density integrated circuit wafer pyrometer measuring accuracy.
Concrete technical scheme of the present utility model is：
A kind of wafer uniform heater, including：Sucker, heater；Described sucker is provided with what several were coaxially disposed
Power density region；Positioned at the power of the power density more than the power density region positioned at inner side in the power density region in outside
Density；Heater includes：Upper end and the laminating of sucker lower end and the mounting disc that is connected, by heating coil disc around constituting and positioned at mounting disc
The heat-generating disc of downside, pushes down heat-generating disc and the platen being connected with sucker lower end；The spacing of the two adjacent rings line with heating function of heat-generating disc by
Center tapers into periphery；The power of heat-generating disc is become larger by center to periphery.When wafer uniform heater is used, inhale
The upper end of disk supports wafer；The wafer uniform heater, the power density positioned at the power density region in outside is more than position
In the power density in the power density region of inner side, the power of heat-generating disc is become larger by center to periphery, during heating in sucker
The temperature of the heart is uniform with the temperature in outside, and the chuck surface temperature difference is controlled in the range of 1 DEG C, improves IC wafers high temperature side
Examination precision.
Preferably, described power density region has four：Circular power density region and three rings positioned at center
Shape power density region；The ratio between the external diameter in circular power density region and adjacent one external diameter in annular power density region are
1:0.7 to 1:0.8；External diameter and the adjacent annular power density area positioned at outside positioned at the annular power density region of inner side
The ratio between the external diameter in domain is 1:0.7 to 1:0.8；The line with heating function number of turns in heat-generating disc correspondence circle power density region is adjacent with correspondence
The ratio between one line with heating function number of turns in annular power density region is 1:1.5 to 1:3.75；Annular power of the correspondence positioned at inner side is close
Spend the ratio between the line with heating function number of turns line with heating function number of turns in annular power density region positioned at outside adjacent with correspondence in region
It is 1:1.3 to 1:2.4.The temperature at sucker center is preferable with the temperature uniformity effect in outside when improving heating.
Preferably, a diameter of 305mm of described sucker；The external diameter in circular power density region is 74mm；Three from suction
The external diameter in the annular power density region that disk center is outwards arranged in order is 164mm, 228mm and 298mm；The material of line with heating function is
Glass line with heating function, a diameter of 3mm of line with heating function, the resistance of line with heating function is 0.6 Ω/m；Hair corresponding with circular power density region
The line with heating function number of turns of hot plate is 2 circles, the heat coil in the annular power density region that three Ge Cong centers of correspondence are outwards arranged in order
Number is 3 circles, 4 circles and 7 are enclosed；The power density in circular power density region is 0.8W/cm2, and three outside successively from sucker center
The power density in the annular power density region of arrangement is followed successively by 1.2W/cm2,2.0W/cm2 and 2.5W/cm2.Selected circle
Power density region and the parameter and the corresponding line with heating function number of turns in annular power density region, through actually used, sucker during heating
The temperature at center is uniform with the temperature in outside, and the temperature difference is less than 0.5 DEG C.
Preferably, described mounting disc upper end is provided with：The inner groove relative with the periphery in circular power density region, with
The relative middle annular groove in the periphery in first outside circular power density region annular power density region, and positioned at first
The relative outer groove in the periphery in second outside annular power density region annular power density region, several are located at middle annular groove
And outer groove between and circumferential radial direction inside groove, several are located at outer groove outside and circumferential footpath is outside
Groove；The inner of radial direction inside groove connects with middle annular groove；The outer end of radial direction inside groove connects with outer groove；The inner of radial direction water jacket and outer shroud
Groove is connected.Inner groove, middle annular groove, outer groove, radial direction inside groove and the radial direction water jacket that mounting disc upper end is provided with make what heat-generating disc was produced
Heat carries out quadratic distribution, makes the temperature of chuck surface more uniform.
Preferably, described sucker gusset is provided with several temperature sensors.For detect circular magnetic chuck temperature simultaneously
Transmitting a signal to controller carries out temperature control.
Compared with prior art, the beneficial effects of the utility model are：The wafer uniform heater, positioned at the work(in outside
The power density of rate density area more than the power density region positioned at inner side power density, the power of heat-generating disc by center to
Periphery becomes larger, and the temperature at sucker center is uniform with the temperature in outside during heating, scope of the chuck surface temperature difference control at 1 DEG C
It is interior, improve IC wafers high temperature test precision.The external diameter in circular power density region is close with adjacent one annular power
It is 1 to spend the ratio between the external diameter in region:0.7 to 1:0.8；Positioned at inner side annular power density region external diameter with adjacent positioned at outer
The ratio between external diameter in annular power density region of side is 1:0.7 to 1:0.8；The heating in heat-generating disc correspondence circle power density region
The ratio between coil number line with heating function number of turns in annular power density region adjacent with correspondence is 1:1.5 to 1:3.75；Correspondence position
The line with heating function number of turns and corresponding one positioned at outside adjacent annular power density area in the annular power density region of inner side
The ratio between the line with heating function number of turns in domain is 1:1.3 to 1:2.4.The temperature at sucker center is imitated with the temperature uniformity in outside when improving heating
Fruit is preferably.Selected circular power density region and the parameter and the corresponding line with heating function number of turns in annular power density region, through reality
Border uses, and the temperature at sucker center is uniform with the temperature in outside during heating, and the chuck surface temperature difference is less than 0.5 DEG C.Sucker gusset sets
There are several temperature sensors, temperature control is carried out for detecting the temperature of circular magnetic chuck and transmitting a signal to controller.
Brief description of the drawings
Fig. 1 is a kind of structural blast schematic diagram of the present utility model.
In figure：Sucker 1, mounting disc 2, line with heating function 3, heat-generating disc 4, platen 5, circular power density region 6, annular power are close
Degree region 7, inner groove 8, middle annular groove 9, outer groove 10, radial direction inside groove 11, radial direction water jacket 12, temperature sensor 13.
Specific embodiment
It is shown below in conjunction with the accompanying drawings that the utility model is described further.
As shown in Figure 1：A kind of wafer uniform heater, including：Sucker 1, heater；If described sucker 1 is provided with
The dry power density region being coaxially disposed；Power density positioned at the power density region in outside is more than the power positioned at inner side
The power density of density area；Heater includes：Upper end fitted with the lower end of sucker 1 and mode connects for screw mounting disc 2, by line with heating function
3 coilings are constituted and positioned at the heat-generating disc 4 of the downside of mounting disc 2, push down heat-generating disc 4 and with the platen 5 of the lower end mode connects for screw of sucker 1；
The spacing of the two adjacent rings line with heating function 3 of heat-generating disc 4 is tapered into by center to periphery；The power of heat-generating disc 4 is by center to periphery
Become larger.
In the present embodiment, described power density region has four：Positioned at the circular power density region 6 at center and three
Annular power density region 7；The external diameter in circular power density region 6 and adjacent one external diameter in annular power density region 7
The ratio between be 1:0.7 to 1:0.8；Positioned at the external diameter and the adjacent annular work(positioned at outside in the annular power density region 7 of inner side
The ratio between external diameter of rate density area 7 is 1:0.7 to 1:0.8；The line with heating function number of turns in the correspondence circle power density of heat-generating disc 4 region 6
The ratio between the line with heating function number of turns in the annular power density region 7 of adjacent with correspondence is 1:1.5 to 1:3.75；Correspondence is located at inner side
Annular power density region 7 the line with heating function number of turns and a correspondence adjacent annular power density region 7 positioned at outside
The ratio between line with heating function number of turns is 1:1.3 to 1:2.4.
The described a diameter of 305mm of sucker 1；The external diameter in circular power density region 66 is 74mm；Three from the center of sucker 1
The external diameter in the annular power density region 7 being outwards arranged in order is 164mm, 228mm and 298mm；The material of line with heating function 3 is glass
Line with heating function 3, a diameter of 3mm of line with heating function 3, the resistance of line with heating function 3 is 0.6 Ω/m；With the corresponding hair in circular power density region 6
The line with heating function number of turns of hot plate 4 is 2 circles, the line with heating function in the annular power density region 7 that three Ge Cong centers of correspondence are outwards arranged in order
The number of turns is 3 circles, 4 circles and 7 circles；The power density in circular power density region 6 is 0.8W/cm2, and three outside from the center of sucker 1
The power density in the annular power density region 7 being arranged in order is followed successively by 1.2W/cm2,2.0W/cm2 and 2.5W/cm2.
The described upper end of mounting disc 2 is provided with：The inner groove 8 relative with the periphery in circular power density region 6, and positioned at circle
The relative middle annular groove 9 in the periphery in first outside shape power density region 6 annular power density region 7, and positioned at first ring
The relative outer groove 10 in the periphery in second outside shape power density region 7 annular power density region 7, four are located at middle annular groove
Between 9 and outer groove 10 and the radial direction inside groove 11 that is uniformly distributed along the circumference, four located at the outside of outer groove 10 and the footpaths being uniformly distributed along the circumference
To water jacket 12；The inner of radial direction inside groove 11 connects with middle annular groove 9；The outer end of radial direction inside groove 11 connects with outer groove 10；Footpath is outside
The inner of groove 12 connects with outer groove 10.
The described gusset of sucker 1 is provided with a temperature sensor 13.Temperature sensor is PT100 platinum resistance temperature sensors
13。
When wafer uniform heater is used, the upper end of sucker 1 supports wafer；The wafer uniform heater makes
When, first pass through ANSYS simulation softwares and calculate the power density distribution of sucker 1 of the uniformity of temperature profile of sucker 1 of sening as an envoy to and mark off work(
Rate density area, is then calculated the power of each heating sub-disk corresponding with each power density region, according to the material of line with heating function 3
Material, the diameter of line with heating function 3, the computing the resistor value of line with heating function 3 obtain the number of turns of line with heating function 3 and coiling heat-generating disc 4, warp of each heating sub-disk
The number of turns of line with heating function 3 after experiment to each heating sub-disk is adjusted, and realizes the temperature in the temperature at the center of sucker 1 and outside during heating
Uniformly, the surface temperature difference of sucker 1 improves IC wafers high temperature test precision less than ± 1 DEG C of design temperature.
The beneficial effects of the utility model are：The wafer uniform heater, positioned at the work(in the power density region in outside
Rate density is more than the power density positioned at the power density region of inner side, and the power of heat-generating disc is become larger by center to periphery,
The temperature at sucker center is uniform with the temperature in outside during heating, and the chuck surface temperature difference is controlled in the range of 1 DEG C, improves integrated electricity
Road wafer pyrometer measuring accuracy.The external diameter in the external diameter in circular power density region and an adjacent annular power density region it
Than being 1:0.7 to 1:0.8；External diameter positioned at the annular power density region of inner side is close with the adjacent annular power positioned at outside
It is 1 to spend the ratio between the external diameter in region:0.7 to 1:0.8；The line with heating function number of turns and corresponding phase in heat-generating disc correspondence circle power density region
The ratio between the line with heating function number of turns in the annular power density region of adjacent one is 1:1.5 to 1:3.75；Annular work(of the correspondence positioned at inner side
The line with heating function number of turns of rate density area one positioned at the outside line with heating function number of turns in annular power density region adjacent with correspondence
The ratio between be 1:1.3 to 1:2.4.The temperature at sucker center is preferable with the temperature uniformity effect in outside when improving heating.Selected
Circular power density region and the parameter and the corresponding line with heating function number of turns in annular power density region, through actually used, during heating
The temperature at sucker center is uniform with the temperature in outside, and the chuck surface temperature difference is less than 0.5 DEG C.Sucker gusset is provided with a TEMP
Device, temperature control is carried out for detecting the temperature of circular magnetic chuck and transmitting a signal to controller.
It is apparent to one skilled in the art that the utility model can change into various ways, and such change is not
Think to depart from scope of the present utility model.All such technical staff to the field obviously change, and will include
Within the scope of present claims.
Claims (5)
1. a kind of wafer uniform heater, including：Sucker, heater；It is characterized in that, it is coaxial that described sucker is provided with several
The power density region of setting；Power density positioned at the power density region in outside is more than positioned at the power density region of inner side
Power density；Heater includes：Upper end and the laminating of sucker lower end and the mounting disc that is connected, by heating coil disc around constituting and be located at
Heat-generating disc on the downside of mounting disc, pushes down heat-generating disc and the platen being connected with sucker lower end；The two adjacent rings line with heating function of heat-generating disc
Spacing is tapered into by center to periphery；The power of heat-generating disc is become larger by center to periphery.
2. wafer uniform heater according to claim 1, it is characterized in that：Described power density region has four：
Positioned at the circular power density region at center and three annular power density regions；The external diameter in circular power density region with it is adjacent
The ratio between the external diameter in annular power density region be 1:0.7 to 1:0.8；Positioned at inner side annular power density region it is outer
The ratio between footpath and adjacent external diameter in annular power density region positioned at outside are 1:0.7 to 1:0.8；Heat-generating disc correspondence circle work(
The ratio between the line with heating function number of turns of rate density area line with heating function number of turns in annular power density region adjacent with correspondence is 1:1.5
To 1:3.75；Correspondence positioned at the annular power density region of inner side the line with heating function number of turns with correspond to adjacent one positioned at outside
The ratio between the line with heating function number of turns in annular power density region is 1:1.3 to 1:2.4.
3. wafer uniform heater according to claim 2, it is characterized in that：The a diameter of 305mm of described sucker；It is circular
The external diameter in power density region is 74mm；The external diameter in three annular power density regions being outwards arranged in order from sucker center is
164mm, 228mm and 298mm；The material of line with heating function is glass line with heating function, a diameter of 3mm of line with heating function, and the resistance of line with heating function is
0.6Ω/m；The line with heating function number of turns of heat-generating disc corresponding with circular power density region be 2 circle, correspondence three Ge Cong centers outwards according to
The line with heating function number of turns in the annular power density region of secondary arrangement is 3 circles, 4 circles and 7 circles；The power density in circular power density region
It is 0.8W/cm2, the power density in three annular power density regions being outwards arranged in order from sucker center is followed successively by 1.2W/
Cm2,2.0W/cm2 and 2.5W/cm2.
4. the wafer uniform heater according to Claims 2 or 3, it is characterized in that：Described mounting disc upper end is provided with：With
The relative inner groove in the periphery in circular power density region, it is close with first annular power outside circular power density region
The relative middle annular groove in the periphery in region is spent, with second annular power density area outside first annular power density region
The relative outer groove in the periphery in domain, several are located between middle annular groove and outer groove and circumferential radial direction inside groove, some
It is individual located at outer groove outside and circumferential radial direction water jacket；The inner of radial direction inside groove connects with middle annular groove；Radial direction inside groove
Outer end connects with outer groove；The inner of radial direction water jacket connects with outer groove.
5. the wafer uniform heater according to claim 1 or 2 or 3, it is characterized in that：If described sucker gusset is provided with
Dry temperature sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621164118.9U CN206194704U (en) | 2016-11-01 | 2016-11-01 | Even heating device of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621164118.9U CN206194704U (en) | 2016-11-01 | 2016-11-01 | Even heating device of wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206194704U true CN206194704U (en) | 2017-05-24 |
Family
ID=58731952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621164118.9U Active CN206194704U (en) | 2016-11-01 | 2016-11-01 | Even heating device of wafer |
Country Status (1)
| Country | Link |
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| CN (1) | CN206194704U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019105422A1 (en) * | 2017-11-30 | 2019-06-06 | 上海微电子装备（集团）股份有限公司 | Heating device and heating method |
| CN111403319A (en) * | 2020-03-23 | 2020-07-10 | 宁波润华全芯微电子设备有限公司 | Wafer heater |
| CN113838780A (en) * | 2021-09-18 | 2021-12-24 | 上海芯源微企业发展有限公司 | Wafer partition heating device and control method |
| CN115632013A (en) * | 2022-12-23 | 2023-01-20 | 无锡先为科技有限公司 | Wafer heating device |
-
2016
- 2016-11-01 CN CN201621164118.9U patent/CN206194704U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019105422A1 (en) * | 2017-11-30 | 2019-06-06 | 上海微电子装备（集团）股份有限公司 | Heating device and heating method |
| CN111403319A (en) * | 2020-03-23 | 2020-07-10 | 宁波润华全芯微电子设备有限公司 | Wafer heater |
| CN113838780A (en) * | 2021-09-18 | 2021-12-24 | 上海芯源微企业发展有限公司 | Wafer partition heating device and control method |
| CN115632013A (en) * | 2022-12-23 | 2023-01-20 | 无锡先为科技有限公司 | Wafer heating device |
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