CN113838780A - Wafer partition heating device and control method - Google Patents
Wafer partition heating device and control method Download PDFInfo
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- CN113838780A CN113838780A CN202111104954.3A CN202111104954A CN113838780A CN 113838780 A CN113838780 A CN 113838780A CN 202111104954 A CN202111104954 A CN 202111104954A CN 113838780 A CN113838780 A CN 113838780A
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 96
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000005192 partition Methods 0.000 title description 5
- 238000005070 sampling Methods 0.000 claims abstract description 33
- 235000012431 wafers Nutrition 0.000 claims description 51
- 230000001276 controlling effect Effects 0.000 description 17
- 230000009286 beneficial effect Effects 0.000 description 10
- 238000007789 sealing Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000009191 jumping Effects 0.000 description 2
- 239000010445 mica Substances 0.000 description 2
- 229910052618 mica group Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
- H05B1/0233—Industrial applications for semiconductors manufacturing
Abstract
The invention provides a wafer zone heating device and a control method thereof. When the first tray body and the second tray body are mutually attached, the groove forms a sealed area for placing a wafer. The first disc body is divided into K sub-areas, N heaters and M temperature detectors are arranged corresponding to the K sub-areas respectively, the heaters are used for heating the corresponding sub-areas, and the temperature detectors are used for collecting temperature sampling values of the corresponding sub-areas. The controller is respectively electrically connected with the N heaters and the M temperature detectors, and the controller is used for acquiring temperature sampling values from the temperature detectors and controlling the heaters to be turned on and off according to the temperature sampling values. The wafer zone heating device has the characteristic of high temperature uniformity, so that the wafer is baked uniformly.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a wafer zone heating device and a control method.
Background
In a complicated photolithography process using a semiconductor wafer as a carrier, a photoresist coating process, a developing process, a baking process, an exposure process, and the like are very important processes, and after these important processes, the wafer is baked in a hot plate. Therefore, the temperature uniformity of the hot plate is high and low, and the effects of coating, exposing and developing the photoresist are directly affected.
Chinese patent application No. CN110828328A discloses a wafer baking apparatus, which includes a heating chamber for accommodating a wafer, a heating plate disposed in the heating chamber, a cover for sealing the heating chamber, and an exhaust pipe. Only one heating plate is arranged to heat the wafer placed in the heating chamber, and the temperature of the heating plate is not uniformly controlled, so that the preparation process of the wafer is adversely affected.
Therefore, it is desirable to design a wafer zone heating apparatus that provides high temperature uniformity to produce semiconductor wafers of good quality.
Disclosure of Invention
The invention aims to provide a wafer zone heating device and a control method thereof, which are used for solving the problem of uneven heating of a wafer in a heating chamber.
In order to achieve the purpose, the invention provides a wafer zone heating device which comprises a first disc body, a second disc body, N heaters, M temperature detectors and a controller, wherein N and M are positive integers;
the second tray body is arranged on the first tray body, at least one of the first tray body and the second tray body is provided with a groove, the groove is arranged on the adjacent side surface of the first tray body and the second tray body, when the first tray body and the second tray body are mutually attached, the first tray body and the second tray body enable the groove to form a sealed area, and the sealed area is used for placing wafers;
the first disc body is divided into K sub-areas, K is a positive integer larger than 1, and N heaters and M temperature detectors are arranged on the first disc body and correspond to the K sub-areas; the heater is used for heating the corresponding sub-area, the temperature detector is used for collecting the temperature sampling value of the corresponding sub-area, and each sub-area at least corresponds to one heater and at least one temperature detector;
the controller is respectively electrically connected with the N heaters, the controller is respectively electrically connected with the M temperature detectors, and the controller is used for acquiring temperature sampling values from the M temperature detectors and controlling the on-off of the N heaters according to the temperature sampling values.
The wafer partition heating device has the beneficial effects that: the first disc body of the wafer partition heating device is divided into K sub-areas, the temperature detector and the heater are correspondingly arranged in each sub-area, accurate control over the temperature of each sub-area is achieved through control of the controller, in addition, a plurality of temperature detectors and a plurality of heaters can be arranged in each sub-area according to design requirements, accurate control over the temperature of each sub-area is achieved, and therefore high temperature uniformity can be achieved in a sealed area formed by the first disc body and the second disc body. In general, the temperature of different subregions can be regulated and controlled by a controller, so that the temperature uniformity of the formed closed region is ensured. Detecting the temperature of each area by using a temperature detector, and controlling the heater to work to correspondingly heat the area where the temperature is low; and controlling the heater to be closed at a place with high temperature so as to correspondingly cool the area.
In a possible embodiment, the heater comprises a plurality of heating wires, each heating wire is connected end to end in sequence, and the density of the heating wires close to the central area of the first disk body is less than that of the heating wires far away from the central area of the first disk body. The beneficial effects are that: because be close to first disk body center heat dissipation slow, also can be to center transfer energy around the first disk body, consequently be close to central zone heater strip dispersible arrangement, and around the first disk body, the radiating rate is fast, in order to guarantee the uniformity of disk body central zone and peripheral region temperature, the clearance of keeping away from first disk body central zone heater strip is dense a little. I.e. the density of the heating wires close to the central area of the first disc is lower than the density of the heating wires remote from the central area of the first disc.
In a possible embodiment, the heater further includes a heating wire, one end of the heating wire is connected to the heating wire at the innermost side of the first tray body, and the other end of the heating wire extends to the outside of the first tray body. The beneficial effects are that: and the innermost heating wire of the first disk body extends to the outer side of the first disk body through the heating lead wire, so that the heating wires arranged in each sub-area in the first disk body are conveniently supplied with power.
In one possible embodiment, the first tray comprises an upper tray, a lower tray and an outer tray;
the outer tray body is provided with a clamping groove, the lower tray body and the upper tray body are arranged in the clamping groove, and the N heaters are arranged between the upper tray body and the lower tray body. The beneficial effects are that: when being applied to wafer baking: the upper disc body is positioned below the wafer and used for supporting the wafer. The upper tray body and the lower tray body are fixed through the outer tray body, and the heater is fixed between the upper tray body and the lower tray body, so that a fixing mode which is simple and stable to assemble is provided.
In a possible embodiment, a sealing element is arranged between the upper disc body and the clamping groove. The beneficial effects are that: the upper tray body is in sealing contact with the clamping groove through the arrangement of the sealing element, and the heater can be prevented from being exposed to cause harm to a human body.
In a possible embodiment, the first tray body is provided with a plurality of protrusions on a side surface thereof close to the second tray body, and in particular, the plurality of protrusions are provided on the upper tray body. The beneficial effects are that: the bulges are used for supporting the wafer, so that the wafer is prevented from directly contacting the first disc body, and the wafer can be prevented from jumping in the lifting process due to the clearance between the upper disc body and the bulges in the lifting and descending processes of the wafer from the upper disc body.
In a possible embodiment, the first tray body or the second tray body is provided with a plurality of air inlet holes, and the air inlet holes are respectively communicated with the closed area and the outside;
the second disk body is equipped with first exhaust hole and a plurality of second exhaust hole, first exhaust hole set up in the central region of second disk body, a plurality of second exhaust holes are followed second disk body week side evenly sets up, first exhaust hole with a plurality of second exhaust holes respectively with airtight region and external intercommunication. The beneficial effects are that: and the first disk body or the second disk body is provided with an air inlet which is respectively communicated with the sealed area and the outside to form an air flow control flow passage, and the pressure difference of the sealed area can be compensated to ensure that the exhaust is uniform.
In a possible embodiment, the device further comprises an alarm;
the alarm is connected with the controller, and the controller is used for controlling the on-off of the alarm. The beneficial effects are that: when the temperature detector detects that the temperature exceeds the preset value, a signal is sent to the controller, or when the heater reaches the preset heating time, a signal is sent to the controller, and the controller controls the alarm to send out alarm information.
The present invention also provides a method for controlling a wafer zone heating apparatus in any of the above possible embodiments, comprising the steps of:
controlling the N heaters to be all started in a first time interval;
acquiring temperature sampling values of K sub-regions through M temperature detectors;
calculating an average value according to the temperature sampling values of the K sub-regions;
comparing the temperature sample values of each sub-region with the average value;
and in a second time interval, respectively controlling the on and off of the N heaters according to the comparison result.
The beneficial effects are that: high temperature uniformity is achieved by comparing the temperature value of each sub-zone with the average temperature value and by cooperation between the controller and the respective heater and temperature detector.
In a possible embodiment, the respectively controlling the on and off of the N heaters according to the comparison result includes:
when the temperature sampling value is not larger than the average value, controlling the heater corresponding to the sub-area to be kept on;
and when the temperature sampling value is larger than the average value, controlling the heater corresponding to the sub-area to be closed.
The beneficial effects are that: specifically, when the temperature sampling value of a certain sub-region is less than or equal to the average value, the heating state is continuously kept; and when the temperature sampling value of a certain sub-area is larger than the average value, the heater is turned off, and the temperature is reduced. So that high temperature uniformity can be achieved.
Drawings
FIG. 1 is a schematic view of a wafer zone heating apparatus according to a first embodiment of the present invention;
FIG. 2 is a schematic view of a partitioned structure of the heater of FIG. 1;
FIG. 3 is a schematic structural diagram of the first tray of FIG. 1;
FIG. 4 is a schematic structural view of the upper tray body in FIG. 3;
FIG. 5 is a schematic view showing a sectional structure of a heater according to a second embodiment of the present invention;
FIG. 6 is a schematic view showing a sectional structure of a heater according to a third embodiment of the present invention.
Reference numbers in the figures:
1. a first tray body; 101. an upper tray body; 102. a lower tray body; 103. an outer tray body; 104. a protrusion;
2. a second tray body; 201. an air inlet pipe; 202. an air outlet pipe;
3. a heater; 301. heating wires; 302. the wire is heated.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. As used herein, the word "comprising" and similar words are intended to mean that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items.
In order to solve the problems in the prior art, embodiments of the present invention provide a wafer zone heating apparatus.
Fig. 1 is a schematic structural diagram of a wafer zone heating apparatus according to a first embodiment of the present invention, and fig. 3 is a schematic structural diagram of a first tray shown in fig. 1.
In some embodiments of the present invention, referring to fig. 1 and 3, the wafer zone heating apparatus includes a first tray 1, a second tray 2, N heaters 3, M temperature detectors (not shown), and a controller (not shown), where N and M are positive integers. Second disk body 2 set up in first disk body 1, first disk body 1 with 2 at least one of second disk body are equipped with the recess, the recess set up in first disk body 1 with the side that second disk body 2 faces mutually, work as first disk body 1 with when second disk body 2 pastes each other, first disk body 1 with second disk body 2 makes the recess forms airtight region, airtight region is used for placing the wafer. The first tray body 1 is divided into K sub-areas, K is a positive integer larger than 1, and N heaters 3 and M temperature detectors are arranged on the first tray body 1 and correspond to the K sub-areas. The heater 3 is used for heating the corresponding sub-area, the temperature detector is used for collecting the temperature sampling value of the corresponding sub-area, and each sub-area at least corresponds to one heater and at least one temperature detector. The controller is respectively electrically connected with the N heaters 3, the controller is respectively electrically connected with the M temperature detectors, and the controller is used for acquiring temperature sampling values from the M temperature detectors and controlling the on-off of the N heaters according to the temperature sampling values.
In some embodiments of the present invention, the circular partition heating apparatus includes a first tray 1, a second tray 2, five heaters 3, and five temperature detectors. The second tray body 2 is arranged right above the first tray body 1, the first tray body 1 and the side face, adjacent to the second tray body 2, of the second tray body, the first tray body 1 is provided with a groove, when the first tray body 1 and the second tray body 2 are far away, wafers to be baked are placed into the groove, and the first tray body 1 and the second tray body are close to each other to enable the groove to form a sealed area. The heater 3 is the mica heater, and the shell is made for the mica material promptly, inside heater for the heater of heater strip, and is equipped with the recess that agrees with mutually with the heater strip shape on the shell, the arranging of the heater strip of being convenient for, first disk body 1 divides into five subregions, and five heaters 3 correspond respectively and set up in five subregions, and every subregion sets up a thermodetector, heater 3 is used for heating the subregion that corresponds, thermodetector is used for gathering the temperature sampling value of the subregion that corresponds. The controller is respectively electrically connected with the five heaters 3, the controller is respectively electrically connected with the five temperature detectors, and the controller is used for acquiring temperature sampling values from the five temperature detectors and controlling the five heaters 3 to be turned on or off according to the temperature sampling values.
In addition, the temperature detectors arranged in each subarea can be set to be Z, wherein Z is a positive integer greater than or equal to one, and when the temperature detector is used, the temperature sampling values can be measured by the Z temperature detectors in the subarea, and then an average value is obtained, so that the obtained temperature sampling values are more accurate.
It is worth to be noted that, in actual installation, the N heaters 3 may be arranged separately or integrally, and in integral installation, each heating wire needs to be respectively communicated with the power supply and the controller.
Fig. 2 is a schematic view of a partitioned structure of the heater of fig. 1.
In some embodiments of the present invention, referring to fig. 2 and 3, the heater 3 includes a plurality of heating wires 301, each of the heating wires 301 is connected end to end in sequence, and the density of the heating wires 301 near the central area of the first tray 1 is less than that of the heating wires 301 far from the central area of the first tray 1.
In some embodiments of the present invention, the first disc 1 is divided into five sectorial sub-areas, the heater 3 includes a plurality of heating wires 301, each heating wire 301 is sequentially connected end to be coiled in a serpentine shape in the sub-areas, and a density of the heating wires 301 close to a central area of the first disc 1 is less than a density of the heating wires 301 far away from the central area of the first disc 1, that is, a gap between adjacent heating wires 301 of the first disc gradually decreases along an inside-out direction.
In some embodiments of the present invention, referring to fig. 2 and 3, the heater 3 further includes a heating wire 302, one end of the heating wire 302 is connected to the heating wire 301 on the innermost side of the first tray body 1, and the other end of the heating wire 302 extends to the outside of the first tray body 1.
In some embodiments of the present invention, one end of the heating wire 302 is connected to one end of the innermost heating wire 301, and the other end of the heating wire 302 extends to the outside of the first tray 1, so that it is convenient to connect a power supply to one end of the outermost heating wire 301 and the other end of the heating wire 302 respectively when in use.
In some embodiments of the present invention, referring to fig. 1 and 3, the first tray 1 includes an upper tray 101, a lower tray 102, and an outer tray 103. The outer tray body 103 is provided with a slot, the lower tray body 102 and the upper tray body 101 are arranged in the slot, and the N heaters 3 are arranged between the upper tray body and the lower tray body.
In some embodiments of the present invention, the five heaters 3 are disposed between the upper tray 101 and the lower tray 102. And the upper tray body 101 and the lower tray body 102 are fastened and connected through bolts, and the heater 3 is clamped between the upper tray body 101 and the lower tray body 102, so that heat transfer of the heater 3 can be ensured, the flatness of the heater 3 can be effectively adjusted, and the temperature uniformity of the surface of the upper tray body 101 is improved.
In some embodiments of the present invention, a sealing member is disposed between the upper tray 101 and the slot. The heater 3 is completely sealed, so that the heater 3 is prevented from being exposed to cause harm to human bodies.
Fig. 4 is a schematic structural view of the upper tray body in fig. 3.
In some embodiments of the invention, referring to fig. 3 and 4, the side of the first tray 1 adjacent to the second tray 2 is provided with a plurality of protrusions 104.
In some embodiments of the present invention, the protrusions 104 are circumferentially distributed, eight protrusions 104 are disposed on the inner circumference, and eight protrusions 104 are disposed on the outer circumference, so as to provide a good supporting function for the wafer to be dried.
In some embodiments of the present invention, the height of the protrusion 104 is 1-10mm, the wafer is placed on the protrusion 104 and keeps a certain gap with the upper tray 101, which can prevent the wafer from being contaminated by dirt on the upper tray 101, and the existence of the gap can prevent the wafer from jumping during the lifting process of the wafer from the upper tray 101.
In some embodiments of the present invention, the first tray body 1 or the second tray body 2 is provided with a plurality of air inlets, and the air inlets are respectively communicated with the sealed area and the outside. Second disk body 2 is equipped with first exhaust hole and a plurality of second exhaust hole, first exhaust hole set up in second disk body 2's central region, a plurality of second exhaust holes are followed 2 week side of second disk body evenly set up, first exhaust hole with a plurality of second exhaust holes respectively with airtight region and external intercommunication.
In some embodiments of the present invention, the second tray 2 is provided with at least one air inlet hole, and the air inlet hole is respectively communicated with the sealed area and the outside. Second disk body 2 is equipped with first exhaust hole and a plurality of second exhaust hole, first exhaust hole set up in second disk body 2's central region is regional, a plurality of second exhaust holes are followed 2 week side of second disk body evenly set up, first exhaust hole with a plurality of second exhaust holes respectively with sealed region and external intercommunication realize good exhaust effect of airing exhaust, under the cooperation of first disk body and second disk body for go up disk body 101 and reach high temperature homogeneity.
In some embodiments of the present invention, referring to fig. 1, an air inlet pipe 201 is disposed at an air inlet on the second tray 2, the first exhaust hole and the second exhaust hole are respectively connected to an exhaust pipe 202, the air inlet pipe 201 and the exhaust pipe 202 are respectively communicated with the closed area, the air inlet pipe 201 is used for balancing pressure in the closed area when the closed area is heated, and the exhaust pipe 202 is used for exhausting waste gas in the closed area.
In some embodiments of the present invention, the wafer zone heating apparatus further comprises an alarm (not shown). The alarm is connected with the controller, and the controller is used for controlling the on-off of the alarm. When the temperature detector detects that the temperature exceeds the preset value, a signal is sent to the controller, or when the heater reaches the preset heating time, a signal is sent to the controller, and the controller controls the alarm to send out alarm information.
FIG. 5 is a schematic view of a sectional structure of a heater according to a second embodiment of the present invention.
In some embodiments of the present invention, referring to fig. 1, 3 and 5, the first tray 1 is divided into six fan-shaped sub-areas, and six heaters 3 are respectively and correspondingly disposed in the six sub-areas, and each sub-area is provided with three temperature detectors, where the heaters 3 are used to heat the corresponding sub-area, and the temperature detectors are used to collect temperature sampling values of the corresponding sub-area. The heater 3 includes a plurality of heater strips 301, each the heater strip 301 links to each other end to end in proper order and is snakelike coiling in the subregion, and is close to the density of the heater strip 301 of 1 central area of first disk body is less than and keeps away from the density of the heater strip 301 of 1 central area of first disk body. The heater 3 further comprises a heating lead 302, one end of the heating lead 302 is connected with the innermost heating wire 301 of the first disc body 1, and the other end of the heating lead 302 extends to the outer side of the first disc body 1.
FIG. 6 is a schematic view showing a sectional structure of a heater according to a third embodiment of the present invention.
In some specific embodiments of the present invention, referring to fig. 1, 3 and 6, the first tray 1 is divided into three annular sub-areas, and three heaters 3 are respectively and correspondingly disposed in the three sub-areas, and each sub-area is provided with six temperature detectors, where the heaters 3 are configured to heat the corresponding sub-area, and the temperature detectors are configured to collect temperature sampling values of the corresponding sub-area. The heater 3 comprises three groups of heating wires 301, each group of heating wires 301 are sequentially connected end to end and are coiled in a Wo-shaped linear shape in a subregion, and the density of the heating wires 301 close to the central region of the first disk body 1 is less than that of the heating wires 301 far away from the central region of the first disk body 1.
In some embodiments of the present invention, the temperature detector is disposed as close to the upper tray 101 as possible, and the temperature detector is ensured to be in a compressed state, so as to better detect the temperature change of the upper tray 101.
In some embodiments of the present invention, the temperature detector is disposed on the protrusion 104 and directly contacts with the wafer for real-time monitoring of the temperature variation of the disk surface, thereby ensuring more uniform heating of the wafer.
The fourth embodiment of the present invention further provides a method for controlling a wafer zone heating apparatus, which specifically includes the following steps:
a first period:
putting the wafer into a heating device, and controlling N heaters to be all started;
acquiring temperature sampling values of K sub-regions through M temperature detectors;
calculating an average value according to the temperature sampling values of the K sub-regions;
a second period of time:
when the temperature sampling value is not larger than the average value, controlling the heater corresponding to the sub-area to be kept on; and when the temperature sampling value is larger than the average value, controlling the heater corresponding to the sub-area to be closed.
Although the embodiments of the present invention have been described in detail hereinabove, it is apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it is to be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the following claims. Moreover, the invention as described herein is capable of other embodiments and of being practiced or of being carried out in various ways.
Claims (10)
1. A wafer zone heating device is characterized by comprising a first disc body, a second disc body, N heaters, M temperature detectors and a controller, wherein N and M are positive integers;
the second tray body is arranged on the first tray body, at least one of the first tray body and the second tray body is provided with a groove, the groove is arranged on the adjacent side surface of the first tray body and the second tray body, when the first tray body and the second tray body are mutually attached, the first tray body and the second tray body enable the groove to form a sealed area, and the sealed area is used for placing wafers;
the first disc body is divided into K sub-areas, K is a positive integer larger than 1, and N heaters and M temperature detectors are arranged on the first disc body and correspond to the K sub-areas; the heater is used for heating the corresponding sub-area, the temperature detector is used for collecting the temperature sampling value of the corresponding sub-area, and each sub-area at least corresponds to one heater and at least one temperature detector;
the controller is respectively electrically connected with the N heaters, the controller is respectively electrically connected with the M temperature detectors, and the controller is used for acquiring temperature sampling values from the M temperature detectors and controlling the on-off of the N heaters according to the temperature sampling values.
2. The wafer zone heating apparatus of claim 1, wherein the heater comprises a plurality of heating wires, each heating wire is connected end to end in sequence, and the density of the heating wires near the central region of the first disk is less than the density of the heating wires far away from the central region of the first disk.
3. The wafer zone heating apparatus according to claim 2, wherein the heater further comprises a heating wire, one end of the heating wire is connected to the heating wire at the innermost side of the first tray body, and the other end of the heating wire extends to the outer side of the first tray body.
4. The wafer zone heating apparatus of claim 1, wherein the first tray comprises an upper tray, a lower tray, and an outer tray;
the outer tray body is provided with a clamping groove, the lower tray body and the upper tray body are arranged in the clamping groove, and the N heaters are arranged between the upper tray body and the lower tray body.
5. The wafer zone heating apparatus of claim 4, wherein a seal is disposed between the upper plate and the pocket.
6. The wafer zone heating apparatus of claim 1, wherein the first plate has a plurality of protrusions on a side thereof adjacent to the second plate.
7. The wafer zone heating device according to claim 1, wherein the first tray body or the second tray body is provided with a plurality of air inlets, and the air inlets are respectively communicated with the sealed area and the outside;
the second disk body is equipped with first exhaust hole and a plurality of second exhaust hole, first exhaust hole set up in the central region of second disk body, a plurality of second exhaust holes are followed second disk body week side evenly sets up, first exhaust hole with a plurality of second exhaust holes respectively with airtight region and external intercommunication.
8. The wafer zone heating apparatus of claim 1, further comprising an alarm;
the alarm is connected with the controller, and the controller is used for controlling the on-off of the alarm.
9. A method for controlling a wafer zone heating apparatus, the method being applied to the wafer zone heating apparatus according to any one of claims 1 to 8, comprising the steps of:
controlling the N heaters to be all started in a first time interval;
acquiring temperature sampling values of K sub-regions through M temperature detectors;
calculating an average value according to the temperature sampling values of the K sub-regions;
comparing the temperature sample values of each sub-region with the average value;
and in a second time interval, respectively controlling the on and off of the N heaters according to the comparison result.
10. The method as claimed in claim 9, wherein the controlling the on/off of the N heaters according to the comparison result comprises:
when the temperature sampling value is not larger than the average value, controlling the heater corresponding to the sub-area to be kept on;
and when the temperature sampling value is larger than the average value, controlling the heater corresponding to the sub-area to be closed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111104954.3A CN113838780A (en) | 2021-09-18 | 2021-09-18 | Wafer partition heating device and control method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111104954.3A CN113838780A (en) | 2021-09-18 | 2021-09-18 | Wafer partition heating device and control method |
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| Publication Number | Publication Date |
|---|---|
| CN113838780A true CN113838780A (en) | 2021-12-24 |
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| CN114318304A (en) * | 2021-12-27 | 2022-04-12 | 拓荆科技股份有限公司 | Heating plate structure |
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