CN111403319A - Wafer heater - Google Patents
Wafer heater Download PDFInfo
- Publication number
- CN111403319A CN111403319A CN202010205835.6A CN202010205835A CN111403319A CN 111403319 A CN111403319 A CN 111403319A CN 202010205835 A CN202010205835 A CN 202010205835A CN 111403319 A CN111403319 A CN 111403319A
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- Prior art keywords
- heating
- heating area
- area
- plate
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000010438 heat treatment Methods 0.000 claims abstract description 138
- 230000001012 protector Effects 0.000 claims description 4
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 3
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229920002530 polyetherether ketone Polymers 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 22
- 238000009413 insulation Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 206010053615 Thermal burn Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Resistance Heating (AREA)
Abstract
The invention discloses a wafer heater, which belongs to the field of semiconductor processing; the wafer heater includes: the heating plate, the bottom plate and the plurality of cushion columns; seven heating areas are arranged on the heating plate, namely a first heating area, a second heating area, a third heating area, a fourth heating area, a fifth heating area, a sixth heating area and a seventh heating area; the first heating area is arranged in the central area, the second heating area and the third heating area are arranged on the outer circumference of the first heating area, and the fourth heating area, the fifth heating area, the sixth heating area and the seventh heating area are arranged on the outer circumferences of the second heating area and the third heating area; the bottom plate is buckled with the heating plate; a plurality of cushion columns are uniformly distributed on the heating plate.
Description
Technical Field
The invention belongs to the field of semiconductor processing, and particularly relates to a wafer heater.
Background
In the existing wafer heating equipment, heating wires rotate from the center to the periphery in a spiral shape, the heating wires are not uniformly distributed in a hot plate, the purpose of uniform heating cannot be achieved, high-precision heating of wafers cannot be met, and the high-precision heating is very important for semiconductor processes.
A heater capable of improving the irradiation efficiency as disclosed in chinese patent CN 108574996 a. The heater according to the embodiment includes a light emitting tube, a heat generating body, and a reflective film. The light emitting tube is cylindrical and is transparent. The heating element is arranged inside the luminous tube, and the heating element takes carbon as a main component. The reflective film is provided on the outer peripheral surface of the light emitting tube and reflects light.
The above-mentioned prior art wafer heater cannot uniformly heat at a constant temperature.
Disclosure of Invention
First, technical problem to be solved
The invention aims to solve the problems in the prior art, and particularly provides a wafer heater which solves the problem that the conventional heater cannot uniformly heat at a constant temperature.
Second, technical scheme
To solve the above technical problem, the present invention provides a wafer heater, comprising: the heating plate, the bottom plate and the plurality of cushion columns;
seven heating areas are arranged on the heating plate, namely a first heating area, a second heating area, a third heating area, a fourth heating area, a fifth heating area, a sixth heating area and a seventh heating area;
the first heating area is arranged in the central area, the second heating area and the third heating area are arranged on the outer circumference of the first heating area, and the fourth heating area, the fifth heating area, the sixth heating area and the seventh heating area are arranged on the outer circumferences of the second heating area and the third heating area;
each heating area is provided with a plurality of arc-shaped grooves, and the arc-shaped grooves in each heating area are connected with the adjacent arc-shaped grooves, so that the arc-shaped grooves in each heating area are connected in series;
a heating wire is arranged in each heating area and embedded in the arc-shaped groove;
the bottom plate is buckled with the heating plate; the plurality of pad columns are arranged on the heating plate.
Wherein, still be equipped with spacing post on the heating plate, spacing post is used for injecing the position of wafer on the heating plate.
Wherein, all be provided with temperature sensor on the bottom plate.
Wherein, an over-temperature protector is arranged on the bottom plate.
Wherein, the cushion column is made of PEEK material and has a height of 0.05-0.2 mm.
Wherein, the outer circumference of the heater is also sleeved with a heat insulation ring.
Thirdly, the invention has the beneficial effects
Compared with the prior art, the wafer heating appliance disclosed by the invention has the advantages that the whole heating plate can uniformly heat through the seven heating areas, and each heating area is designed as an independent heating unit, so that the effect of uniformly heating the wafer is achieved, the heat in the effective heating area is dissipated too fast through the design of the heat insulation ring, the heat insulation effect is improved, meanwhile, the heat insulation ring can also effectively avoid scalding surrounding personnel, and the safety performance is improved.
Drawings
FIG. 1 is an exploded view of a wafer heater of the present invention;
FIG. 2 is a schematic view of a backside structure of the wafer heater of the present invention;
FIG. 3 is a schematic front view of a wafer heater according to the present invention;
FIG. 4 is a schematic diagram of a back side structure of a heating plate of the wafer heater according to the present invention;
in the figure: 1 is a heating plate; 2 is a bottom plate; 3 is a cushion column; 4 is a limit column; 5 is a temperature sensor; 6 is an over-temperature protector; 7 is a heat insulation ring; 11 is a first heating zone; 12 is a second heating zone; 13 is a third heating zone; 14 is a fourth heating zone; 15 is the fifth heating zone; 16 is a sixth heating area; and 17 is a seventh heating zone.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
The first embodiment,
The structure of the wafer heater of the present embodiment as shown in fig. 1 to 4 includes: heating plate 1, bottom plate 2 and pad column 3
Seven heating areas are arranged on the second surface of the heating plate 1, namely a first heating area 11, a second heating area 12, a third heating area 13, a fourth heating area 14, a fifth heating area 15, a sixth heating area 16 and a seventh heating area 17;
the first heating area 11 is arranged at the central area, the second heating area 12 and the third heating area 13 are arranged at the outer circumference of the first heating area 11, and the fourth heating area 14, the fifth heating area 15, the sixth heating area 16 and the seventh heating area 17 are arranged at the outer circumference of the second heating area 12 and the third heating area 13;
each heating area is provided with a plurality of arc-shaped grooves, and the arc-shaped grooves in each heating area are connected with the adjacent arc-shaped grooves, so that the arc-shaped grooves in each heating area are connected in series;
a heating wire is arranged in each heating area and embedded in the arc-shaped groove;
the heating wire is fixed on the heating plate 1 by the bottom plate 2 and the heating plate 1.
The pad column 3 is made of PEEK material, the height is 0.05-0.2 mm, the pad column is arranged on the heating plate 1, and the wafer is placed on the pad column 3, so that a gap is formed between the wafer and the heating plate 1, and the wafer is prevented from being directly contacted with the heating plate 1 to damage the wafer.
Still be equipped with spacing post 4 on heating plate 1, the quantity of spacing post 4 is 6, and the wafer is placed between 6 spacing posts, and when this square heated the wafer at every turn, the wafer can both be placed in the fixed position of heating plate 1.
The bottom plate 2 is provided with a temperature sensor 5, and the temperature sensor 5 is used for detecting a temperature value on the bottom plate 2.
The over-temperature protector 6 is arranged on the bottom plate 2, and when the temperature is too high, the heater is powered off in time, so that the heater is prevented from being damaged.
Example II,
The heater is higher at the working process temperature, and the temperature around the heater also can be higher like this, scalds the staff very easily, therefore on the basis of above-mentioned embodiment, has set up thermal-insulated ring 7, and thermal-insulated ring 7 cover is established at the heater periphery, has played thermal-insulated effect to around, has also reduced the giving off of heater heat simultaneously, and the staff that also guarantees simultaneously and bottom plate 2 or the direct contact of heating plate have effectually avoided.
The above is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, it is possible to make several improvements and modifications without departing from the technical principle of the present invention, and these improvements and modifications should also be considered as the protection scope of the present invention.
Claims (6)
1. A wafer heater, comprising: the heating plate (1), the bottom plate (2) and a plurality of cushion columns (3);
the heating plate (1) is provided with seven heating areas, namely a first heating area (11), a second heating area (12), a third heating area (13), a fourth heating area (14), a fifth heating area (15), a sixth heating area (16) and a seventh heating area (17);
the first heating area (11) is arranged in the central area, the second heating area (12) and the third heating area (13) are arranged on the outer circumference of the first heating area (11), and the fourth heating area (14), the fifth heating area (15), the sixth heating area (16) and the seventh heating area (17) are arranged on the outer circumference of the second heating area (12) and the third heating area (13);
each heating area is provided with a plurality of arc-shaped grooves, and the arc-shaped grooves in each heating area are connected with the adjacent arc-shaped grooves, so that the arc-shaped grooves in each heating area are connected in series;
each heating area is internally provided with a heating wire which is embedded in the arc-shaped groove;
the bottom plate (2) is buckled with the heating plate (1); the plurality of cushion columns (3) are arranged on the heating plate (1).
2. The wafer heater according to claim 1, characterized in that a position-limiting column (4) is further provided on the heating plate (1), and the position-limiting column (4) is used for limiting the position of the wafer on the heating plate (1).
3. The wafer heater according to claim 1, characterized in that the base plates (2) are each provided with a temperature sensor (5).
4. A wafer heater according to claim 3, characterized in that an over-temperature protector (6) is arranged on the base plate (2).
5. The wafer heater according to claim 1, characterized in that the spacer (3) is of PEEK material and has a height of 0.05 to 0.2 mm.
6. The wafer heater according to claim 1, wherein the outer circumference of the heater is further sleeved with a heat insulating ring (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010205835.6A CN111403319A (en) | 2020-03-23 | 2020-03-23 | Wafer heater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010205835.6A CN111403319A (en) | 2020-03-23 | 2020-03-23 | Wafer heater |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111403319A true CN111403319A (en) | 2020-07-10 |
Family
ID=71413991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010205835.6A Pending CN111403319A (en) | 2020-03-23 | 2020-03-23 | Wafer heater |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111403319A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113838780A (en) * | 2021-09-18 | 2021-12-24 | 上海芯源微企业发展有限公司 | Wafer partition heating device and control method |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5662469A (en) * | 1991-12-13 | 1997-09-02 | Tokyo Electron Tohoku Kabushiki Kaisha | Heat treatment method |
| KR20060107015A (en) * | 2005-04-06 | 2006-10-13 | (주)에티스 | Wafer heating aluminium plate heater |
| KR100778782B1 (en) * | 2006-07-24 | 2007-11-27 | 주식회사 테라세미콘 | Semiconductor manufacturing apparatus |
| JP2011165693A (en) * | 2010-02-04 | 2011-08-25 | Tokyo Electron Ltd | Heating device, coating/developing system, heating method, coating/developing method, and recording medium having program for executing heating method or coating/developing method |
| CN103426793A (en) * | 2012-05-24 | 2013-12-04 | 沈阳芯源微电子设备有限公司 | Substrate cooling-heating processing device |
| CN104617008A (en) * | 2013-11-01 | 2015-05-13 | 沈阳芯源微电子设备有限公司 | Wafer heating device |
| CN206194704U (en) * | 2016-11-01 | 2017-05-24 | 杭州长川科技股份有限公司 | Even heating device of wafer |
| CN208923036U (en) * | 2018-09-14 | 2019-05-31 | 天虹科技股份有限公司 | Ultrathin heating dish |
| CN209194060U (en) * | 2018-10-19 | 2019-08-02 | 长鑫存储技术有限公司 | Heating device and chemical vapor depsotition equipment |
| CN110556319A (en) * | 2019-09-10 | 2019-12-10 | 北京北方华创微电子装备有限公司 | Heater, semiconductor processing chamber and processing equipment |
-
2020
- 2020-03-23 CN CN202010205835.6A patent/CN111403319A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5662469A (en) * | 1991-12-13 | 1997-09-02 | Tokyo Electron Tohoku Kabushiki Kaisha | Heat treatment method |
| KR20060107015A (en) * | 2005-04-06 | 2006-10-13 | (주)에티스 | Wafer heating aluminium plate heater |
| KR100778782B1 (en) * | 2006-07-24 | 2007-11-27 | 주식회사 테라세미콘 | Semiconductor manufacturing apparatus |
| JP2011165693A (en) * | 2010-02-04 | 2011-08-25 | Tokyo Electron Ltd | Heating device, coating/developing system, heating method, coating/developing method, and recording medium having program for executing heating method or coating/developing method |
| CN103426793A (en) * | 2012-05-24 | 2013-12-04 | 沈阳芯源微电子设备有限公司 | Substrate cooling-heating processing device |
| CN104617008A (en) * | 2013-11-01 | 2015-05-13 | 沈阳芯源微电子设备有限公司 | Wafer heating device |
| CN206194704U (en) * | 2016-11-01 | 2017-05-24 | 杭州长川科技股份有限公司 | Even heating device of wafer |
| CN208923036U (en) * | 2018-09-14 | 2019-05-31 | 天虹科技股份有限公司 | Ultrathin heating dish |
| CN209194060U (en) * | 2018-10-19 | 2019-08-02 | 长鑫存储技术有限公司 | Heating device and chemical vapor depsotition equipment |
| CN110556319A (en) * | 2019-09-10 | 2019-12-10 | 北京北方华创微电子装备有限公司 | Heater, semiconductor processing chamber and processing equipment |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113838780A (en) * | 2021-09-18 | 2021-12-24 | 上海芯源微企业发展有限公司 | Wafer partition heating device and control method |
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| Date | Code | Title | Description |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200710 |
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| RJ01 | Rejection of invention patent application after publication |