KR20060107015A - Wafer heating aluminium plate heater - Google Patents

Wafer heating aluminium plate heater Download PDF

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Publication number
KR20060107015A
KR20060107015A KR1020050028445A KR20050028445A KR20060107015A KR 20060107015 A KR20060107015 A KR 20060107015A KR 1020050028445 A KR1020050028445 A KR 1020050028445A KR 20050028445 A KR20050028445 A KR 20050028445A KR 20060107015 A KR20060107015 A KR 20060107015A
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South Korea
Prior art keywords
aluminum plate
plate
hot wire
temperature
wafer
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KR1020050028445A
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Korean (ko)
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권오준
강임성
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(주)에티스
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Priority to KR1020050028445A priority Critical patent/KR20060107015A/en
Publication of KR20060107015A publication Critical patent/KR20060107015A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

Abstract

본 발명은 반도체 제조용 웨이퍼의 특정온도에서 균일한 온도를 유지하기위한 목적으로 대구경 300mm 알루미늄 판(7) 히터에 관한 것으로 웨이퍼(6)의 불안정한 온도를 빠른 시간에 균일한 가열로 기능유지와 품질향상에 대한 것이다.The present invention relates to a large diameter 300mm aluminum plate (7) heater for the purpose of maintaining a uniform temperature at a specific temperature of the wafer for semiconductor manufacturing, to maintain the function and improve the quality of the unstable temperature of the wafer (6) by uniform heating in a short time It is about.

본 발명은 빠른 시간에 특정온도에서 균일한 온도를 유지하기위한 목적으로 재료선정에 있어서 기존의 운모 판(2) 보다 열전달 성능이 좋은 대구경 300mm 알루미늄 판(7)을 사용하고, 절연 및 노이즈 방지를 위해 대구경 300mm 알루미늄 판(7)의 표면을 약 100㎛ 두께로 산화피막(3)을 형성하는 것이다.The present invention uses a large diameter 300mm aluminum plate (7) with better heat transfer performance than the conventional mica plate (2) in the material selection for the purpose of maintaining a uniform temperature at a specific temperature in a short time, and to prevent insulation and noise In order to form the oxide film 3 on the surface of the large-diameter 300 mm aluminum plate 7 to a thickness of about 100 μm.

균일한 온도를 전달하기 위하여 대구경 300mm 알루미늄 판(7)에 열선 홈(8)을 정밀가공하고 가공된 패턴 형태에 열선(4)을 삽입하는 것이다.In order to transmit uniform temperature, the hot wire groove 8 is precisely processed in the large-diameter 300 mm aluminum plate 7, and the hot wire 4 is inserted into the processed pattern.

웨이퍼, 알루미늄 판, 운모 판, 산화피막, 열선, 포토공정, 베이크 Wafer, aluminum plate, mica plate, anodized film, hot wire, photo process, bake

Description

웨이퍼 가열 알루미늄 판 히터{Wafer Heating Aluminium Plate Heater}Wafer Heating Aluminum Plate Heater

도1은 반도체 제조용 웨이퍼 가열 알루미늄 판 히터 의 열선 패턴1 is a hot wire pattern of a wafer heating aluminum plate heater for semiconductor manufacturing

도2는 반도체 제조용 웨이퍼 가열 알루미늄 판 히터 단면도Figure 2 is a cross-sectional view of a wafer heating aluminum plate heater for semiconductor manufacturing

도3은 기존 운모 판 히터 단면도Figure 3 is a cross-sectional view of the conventional mica plate heater

<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>

1a: 상판 (Upper Plate) 1b: 하판 (Bottom Plate)1a: Upper Plate 1b: Bottom Plate

2: 운모 판 (Mica Plate) 3: 산화피막 ( Hard Anodizing)2: Mica Plate 3: Hard Anodizing

4: 열선 4a: 가장자리 영역4: hot wire 4a: edge area

4b:중심 영역 6: 웨이퍼 (Wafer)4b: center region 6: wafer

7: 대구경 300mm 알루미늄 판 8: 열선 홈7: large diameter 300mm aluminum plate 8: heating wire groove

본 발명은 열전달이 빠르고 온도분포를 균일하게 가열하는 목적으로 알루미늄 판(7)에 열선 홈(8)을 가공하여 형성하는 히터에 관한 것으로 특히 알루미늄 판(7)에 산화피막(3)과 열선(4)의 형태에 관한 것이다.The present invention relates to a heater formed by processing a hot wire groove (8) in the aluminum plate (7) for the purpose of rapid heat transfer and uniform heating of the temperature distribution, in particular the oxide film (3) and the hot wire ( It is about form of 4).

반도체 제조 공정의 하나인 포토공정 중에서 베이크(bake) 과정은 포토공정 을 완성시키는 중요한 과정이다.In the photo process, which is one of the semiconductor manufacturing processes, the bake process is an important process for completing the photo process.

기존의 직경 200mm 웨이퍼용 트랙장비에서 점차적으로 대구경( 직경 300mm ) 웨이퍼용 트랙장비로 대형화 되었다. 대형화 추세에 있어서 대구경 웨이퍼의 온도 균일도가 큰 문제가 되고 있다.From the existing track equipment for 200mm diameter wafers, the track equipment has been gradually enlarged to large diameter (300mm diameter) track equipment. In the trend of larger size, the temperature uniformity of large diameter wafers has become a big problem.

종래의 히터는 보편적이고 광범위하게 사용되고 있는 운모 판(2) 히터와 실리콘 러버 (Silicon Ruber ) 히터로 구분 할 수 있다.Conventional heaters can be divided into mica plate (2) heater and silicon rubber (Silicon Ruber) heater that is widely used.

실리콘 러버 (Silicon Ruber )는 최대 표면 상승온도가 260℃까지 허용되는 제약을 받고 있고 방열 및 발열조건이 충분한 구조에서만 사용되는 단점을 갖고 있다.Silicon Ruber has the limitation that the maximum surface rise temperature is allowed up to 260 ℃ and is used only in the structure with sufficient heat dissipation and heating conditions.

운모 판(2) 히터도 절연성은 우수하나 발열체의 열전달을 방해하는 재료로 빠른 온도 상승의 제약을 받고 있고 운모 판(2) 과 운모 판(2) 사이에 열선(4)을 삽입하여 접착제로 붙여 성형하는 수준이다.The mica plate (2) heater is also excellent in insulation but is limited by rapid temperature rise as a material that prevents heat transfer of the heating element. A heating wire (4) is inserted between the mica plate (2) and the mica plate (2) and glued. It is a level to mold.

이러한 종래의 운모 판(2) 히터 구조에서는 내습성, 내구성, 열전달이 늦고 가열시 접착제로 인한 운모 판(2) 과 열선(4) 사이에 접착성분이 증발하고 경화되면서 기공이 형성되어 균일한 온도를 전달하지 못 하는 단점이 있다.In the conventional mica plate 2 heater structure, moisture resistance, durability, heat transfer is slow, and pores are formed by evaporating and curing the adhesive component between the mica plate 2 and the heating wire 4 due to the adhesive when heated, and thus uniform temperature. There is a disadvantage that can not be delivered.

열선(4) 재료는 매우 다양하여 용도에 맞는 재료를 선정하는 기준이 매우 중요하다. 열선(4)의 재료는 니켈크롬 계열 NCH-W1, NCH-W2 와 철크롬 계열 FCH-WS, FCH-W1 FCH-W2 가 보편화 되어 있고 히터 용량 및 사용 조건에 맞게 선정해야 한다.Since the material of the hot wire 4 is very diverse, it is very important to select a material suitable for the purpose. The material of the hot wire 4 is nickel chromium-based NCH-W1, NCH-W2 and iron chromium-based FCH-WS, FCH-W1 FCH-W2 and are generally selected according to the heater capacity and use conditions.

또한 절연재로 사용되는 운모(Mica)는 형상을 자유롭게 제작할 수 있으나 열선(2)과 운모를 접합하는 방식에 있어서 접착제를 사용하거나 가열 , 가압 하는 방식은 제작과정도 어려울 뿐만 아니라 열효율의 저하와 균일한 온도분포를 갖지 못 한다.In addition, the mica (Mica) used as an insulating material can be freely manufactured, but in the method of joining the heating wire (2) and mica, the method of using an adhesive or heating and pressurizing is not only difficult to produce, but also lowers the thermal efficiency and uniformity. It has no temperature distribution.

따라서 본 발명은 상판(1a)과 같은 재료인 알루미늄 판(7)에 열선 홈(8)을 정밀한 구조로 가공하고 알루미늄 판(7)에 산화피막(3)으로 표면처리 하여 절연하고 열선(4)을 삽입 성형하여 액상 세라믹으로 알루미늄 판(7)과 열선 홈(8)의 사이의 기공을 막고 고정하여 조립 하는 구조로 열전달과 온도 균일도를 향상시키는 방법이다.Therefore, in the present invention, the heating wire groove 8 is precisely processed on the aluminum plate 7 made of the same material as the upper plate 1a, and the aluminum plate 7 is surface-treated with an oxide film 3 to insulate the heating wire 4. It is a method of improving the heat transfer and temperature uniformity by insert molding to prevent the pores between the aluminum plate (7) and the hot wire groove (8) to be assembled by liquid ceramic, and to assemble.

본 발명이 적용되는 반도체 제조용 웨이퍼 가열 알루미늄 판 히터 구성은 도1, 도2를 참조하여 본 발명에 대한 설명을 하기로 한다.The wafer heating aluminum plate heater configuration for semiconductor manufacturing to which the present invention is applied will be described with reference to FIGS. 1 and 2.

도1은 대구경 300mm 알루미늄 판(7) 히터의 열선 형태이며 와 도3은 기존 운모 판 히터의 단면도이다. 대구경 300mm 알루미늄 판(7)에 열선(4)이 삽입되어 절연재를 사용한 운모 판 히터보다 열손실이 적어 열이 상판(1a)으로 빠르게 전달된다.Figure 1 is a hot wire form of a large diameter 300mm aluminum plate (7) heater and Figure 3 is a cross-sectional view of a conventional mica plate heater. The hot wire 4 is inserted into the large-diameter 300 mm aluminum plate 7, so that the heat loss is less than that of the mica plate heater using the insulating material, so that heat is transferred to the upper plate 1 a quickly.

전달된 열이 상판(1a)에서 웨이퍼(6)를 균일하게 가열하게 하는 방식이다.The transferred heat causes the wafer 6 to be uniformly heated on the top plate 1a.

상기의 목적을 이루기 위해서는 열선(4)의 형상으로 열선 홈(8) 크기를 결정하고 대구경 상판(1a)에 균일한 온도를 전달될 수 있게 알루미늄 판(7)에 2개의 영역을 나누어 판 중심 영역(4a)과 가장자리 영역(4b)에서 온도를 각각 제어 할 수 있는 구조이다.In order to achieve the above object, the center area of the plate is divided into two areas on the aluminum plate 7 so as to determine the size of the heat wire groove 8 in the shape of the heat wire 4 and to transmit a uniform temperature to the large-diameter upper plate 1a. It is the structure which can control temperature in 4a and the edge area | region 4b, respectively.

본 발명은 산화피막(3) 처리된 대구경 300mm 알루미늄 판(7) 히터로 운모 판(2)의 단점인 열전달의 방해요소인 운모 판(2)을 적용하지 않고 절연은 및 빠른 열전달의 성능을 갖는다.The present invention is a large diameter 300mm aluminum plate (7) heater treated with anodized film (3) without insulation and fast heat transfer performance without applying the mica plate (2) which is a disadvantage of heat transfer, which is a disadvantage of the mica plate (2) .

운모 판(2)은 평탄도가 좋지 않고 열선(4)을 정밀한 형태의 패턴으로 기계가공하기 어려웠으나 알루미늄 판 히터는 가공성이 좋은 알루미늄 판(7)을 적용하여 기존의 문제점들을 보안 하였다.Mica plate (2) was not good flatness and it was difficult to machine the heating wire (4) in a precise pattern, but the aluminum plate heater to secure the existing problems by applying a good workability aluminum plate (7).

웨이퍼 가열 균일도를 향상시키기 위해 알루미늄 판(7)에 2개의 영역(Zone)을 적용하여 빠른 승온시간과 온도 불균일을 해결하여 반도체 제조과정에 있어 베이크(bake) 공정시간의 단축과 품질향상이 된다.In order to improve wafer heating uniformity, two zones are applied to the aluminum plate 7 to solve the rapid rise in temperature and temperature unevenness, thereby shortening the baking process time and improving quality in the semiconductor manufacturing process.

Claims (2)

웨이퍼 가열 알루미늄 판 히터에 있어서,In the wafer heating aluminum plate heater, 도1 과 같이 대구경 300mm 알루미늄 판(7)에 열선의 패턴이 중심영역(4a)과 가장자리 영역(4b)의 패턴을 형성 하는 것과, 각 영역의 열선저항이 중심영역(4a)은 48Ω∼ 50Ω을 갖고 가장자리영역(4b)은 42Ω ∼ 44Ω을 특징으로 하는 것.As shown in FIG. 1, the pattern of the hot wire forms a pattern of the center region 4a and the edge region 4b on the large-diameter 300mm aluminum plate 7, and the heat resistance of each region is 48Ω to 50Ω. The edge region 4b is characterized by 42? 44?. 웨이퍼 가열 알루미늄 판 히터에 있어서,In the wafer heating aluminum plate heater, 대구경 300mm 알루미늄 판(7)에 열선 홈(8)을 가공하고 100㎛ 두께로 산화피막(3)을 형성하여 열선(4)과의 절연을 특징으로 하는 알루미늄 판(7).An aluminum plate (7) characterized by processing a hot wire groove (8) in a large-diameter 300 mm aluminum plate (7) and forming an oxide film (3) with a thickness of 100 µm.
KR1020050028445A 2005-04-06 2005-04-06 Wafer heating aluminium plate heater KR20060107015A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101110718B1 (en) * 2009-09-11 2012-02-24 주식회사 제우스 Hot Plate
CN111403319A (en) * 2020-03-23 2020-07-10 宁波润华全芯微电子设备有限公司 Wafer heater

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101110718B1 (en) * 2009-09-11 2012-02-24 주식회사 제우스 Hot Plate
CN111403319A (en) * 2020-03-23 2020-07-10 宁波润华全芯微电子设备有限公司 Wafer heater

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