CN209194060U - Heating device and chemical vapor depsotition equipment - Google Patents
Heating device and chemical vapor depsotition equipment Download PDFInfo
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- CN209194060U CN209194060U CN201821697778.2U CN201821697778U CN209194060U CN 209194060 U CN209194060 U CN 209194060U CN 201821697778 U CN201821697778 U CN 201821697778U CN 209194060 U CN209194060 U CN 209194060U
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Abstract
This application involves ic manufacturing technology fields, in particular to a kind of heating device and chemical vapor depsotition equipment.Heating device includes: supporting part, can carry substrate；Heater is installed on supporting part, and heater can heat supporting part, is capable of forming film so as to be carried on the substrate of supporting part, and heater includes multiple heating elements, and each heating element is corresponding with the different zones of supporting part respectively；Adjuster, adjuster include the adjustment element for obtaining element and connection acquisition element and each heating element, and etching condition can be obtained by obtaining element, and etching condition is the etching condition when being etched to the substrate for being formed with film；Adjustment element can carry out independent adjustment according to heating power of the etching condition to each heating element, to adjust the temperature of the different zones of supporting part.Design, which can alleviate the substrate for being formed with film and occur etching in subsequent etching processes, in this way is not thorough or overetched situation.
Description
Technical field
This application involves ic manufacturing technology fields, in particular to a kind of heating device and chemical vapor deposition
Product equipment.
Background technique
Chemical vapor deposition (English name: Chemical Vapor Deposition, referred to as: CVD) it is a kind of chemical industry
Technology, the technology are mainly carried out using one or more of gas phase compounds or simple substance containing film element on the surface of a substrate
The method that chemical reaction generates film.It specifically, include that reaction chamber and setting are reacting indoor in chemical vapor depsotition equipment
Heating device, the heating device are installed on the supporting part for carrying substrate, and when work is filled with reaction gas into reaction chamber, together
When heating device the substrate on supporting part and supporting part is heated, be deposited on reaction gas on substrate and form film.
But in the related technology, heating device only includes therefore a heating element causes heating device can not be to supporting part
The temperature of different zones regulated and controled, so that the thickness of the film at position corresponding with different zones on substrate can not be changed
Degree, the substrate for resulting in film in this way are easy to appear etching in subsequent etching processes and are not thorough or overetched feelings
Condition.
It should be noted that information is only used for reinforcing the reason to the background of the application disclosed in above-mentioned background technology part
Solution, therefore may include the information not constituted to the prior art known to persons of ordinary skill in the art.
Utility model content
The application's is designed to provide a kind of heating device and chemical vapor depsotition equipment, can alleviate and be formed with film
Substrate occur etching in subsequent etching processes and be not thorough or overetched situation, improve etch uniformity.
The application first aspect provides a kind of heating device comprising:
Supporting part can carry substrate；
Heater is installed on the supporting part, and the heater can heat the supporting part, so as to be carried on described hold
Film is capable of forming on the substrate in load portion, and the heater includes multiple heating elements, each heating element respectively with institute
The different zones for stating supporting part are corresponding；
Adjuster, the adjuster include obtaining element and the connection adjustment for obtaining element and each heating element
Element, the acquisition element can obtain etching condition, and the etching condition is to be etched to the substrate for being formed with film
When etching condition；The adjustment element can carry out only according to heating power of the etching condition to each heating element
Vertical adjustment, to adjust the temperature of the different zones of the supporting part.
In the exemplary embodiment of the application, the adjustment element includes:
Determination unit is connect with the acquisition element, and being capable of and the different zones determining according to the etching condition
Size relation between corresponding etch-rate；
Adjustment unit is connect with the determination unit, and the adjustment unit can be based on corresponding with the different zones
Etch-rate between size relation, the heating power of each heating element corresponding with the different zones is carried out
Independent adjustment, to adjust the temperature of the different zones.
In the exemplary embodiment of the application, the different zones include central area and fringe region, described more
A heating element includes the first heating element corresponding with the central area and corresponding with the fringe region second
Heating element.
In the exemplary embodiment of the application, second heating element is provided with locating slot, first heating
Element is mounted in the locating slot.
In the exemplary embodiment of the application, it is arranged between first heating element and second heating element
Thermal isolation film.
In the exemplary embodiment of the application, the throwing that is obtained on the direction of the loading end perpendicular to the supporting part
In shadow, the perspective plane of the loading end can be overlapped with the perspective plane of the substrate.
In the exemplary embodiment of the application, the outer edge of the loading end of the supporting part is provided with cyclic annular limit
Portion, it is described ring-type limiting section in can be provided with the substrate.
In the exemplary embodiment of the application, the heater is embedded in the supporting part.
The application second aspect provides a kind of chemical vapor depsotition equipment comprising heating dress described in any of the above embodiments
It sets.
Technical solution provided by the present application can achieve it is following the utility model has the advantages that
Heating device and chemical vapor depsotition equipment provided herein, by obtaining to the substrate for being formed with film
Etching condition when being etched, then according to etching condition pair each heating element corresponding with the different zones of supporting part
Heating power carries out independent adjustment, to adjust the temperature of the different zones of supporting part, it may be assumed that opposite with different zones on adjustment substrate
The temperature at the position answered is formed with thin so that the thickness profile for being formed in the film of substrate meets etching condition with alleviation
The substrate of film occurs etching in subsequent etching processes and is not thorough or overetched situation, improves etch uniformity.
It should be understood that above general description and following detailed description be only it is exemplary and explanatory, not
The application can be limited.
Detailed description of the invention
The drawings herein are incorporated into the specification and forms part of this specification, and shows the implementation for meeting the application
Example, and together with specification it is used to explain the principle of the application.It should be evident that the accompanying drawings in the following description is only the application
Some embodiments for those of ordinary skill in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 is the structural schematic diagram of heating device in the related technology；
Fig. 2 be in the related technology heating device during heating, the Temperature Distribution schematic diagram of supporting part；
Fig. 3 is to show through the sectional structure including the substrate after the processing of the chemical vapor depsotition equipment of the heating device in Fig. 1
It is intended to；
Fig. 4 and Fig. 5 is respectively the sectional structure signal after substrate shown in Fig. 3 is etched under different etching conditions
Figure；
Fig. 6 is the structural schematic diagram of heating device described in one embodiment of the application；
Fig. 7 is the block diagram of heating device described in one embodiment of the application；
Fig. 8 to Figure 10 during heating for heating device described in the present embodiment, illustrate by the Temperature Distribution of supporting part
Figure；
Figure 11 to Figure 13 is respectively through the chemical vapor depsotition equipment including the heating device in Fig. 6 in different etching conditions
The schematic cross-sectional view of substrate after lower processing；
Figure 14 is that the sectional structure after substrate shown in Figure 11, Figure 12 or Figure 13 is etched under itself etching condition shows
It is intended to.
Description of symbols:
Fig. 1 is into Fig. 5:
10, heating element；11, supporting part；12, substrate；13, film.
Fig. 6 is into Figure 14:
20, the first heating element；21, the second heating element；210, locating slot；22, supporting part；220, loading end；23,
Adjuster；230, element is obtained；231, adjustment element；2310, determination unit；2311, adjustment unit；24, radio-frequency filter；
25, cyclic annular limiting section；26, substrate；27, film.
Specific embodiment
Example embodiment is described more fully with reference to the drawings.However, example embodiment can be with a variety of shapes
Formula is implemented, and is not understood as limited to embodiment set forth herein；On the contrary, thesing embodiments are provided so that the application will
Fully and completely, and by the design of example embodiment comprehensively it is communicated to those skilled in the art.Identical attached drawing in figure
Label indicates same or similar structure, thus the detailed description that will omit them.
Although the term of relativity, such as "upper" "lower" is used to describe a component of icon for another in this specification
The relativeness of one component, but these terms are in this manual merely for convenient, for example, with reference to the accompanying drawings described in show
The direction of example.It is appreciated that, if making it turn upside down the device overturning of icon, the component described in "upper" will
As the component in "lower".When certain structure is at other structures "upper", it is possible to refer to that certain structural integrity is formed in other structures
On, or refer to that certain structure is " direct " and be arranged in other structures, or refer to that certain structure is arranged by the way that another structure is " indirect " in other knots
On structure.
Term "one", " one ", "the", " described " to indicate there are one or more elements/component part/etc.；With
Language " comprising " and " having " is to indicate the open meaning being included and refer to element/composition portion in addition to listing
Also may be present except divide/waiting other element/component part/etc.；Term " first " and " second " etc. are only used as label,
It is not the quantity limitation to its object.
Chemical vapor deposition (English name: Chemical Vapor Deposition, referred to as: CVD) it is a kind of chemical industry
Technology, the technology are mainly carried out using one or more of gas phase compounds or simple substance containing film element on the surface of a substrate
The method that chemical reaction generates film.It specifically, include that reaction chamber and setting are reacting indoor in chemical vapor depsotition equipment
Heating device, the heating device are installed on the supporting part for carrying substrate, and when work is filled with reaction gas into reaction chamber, together
When heating device the substrate on supporting part and supporting part is heated, be deposited on reaction gas on substrate and form film.
But in the related technology, as shown in Figure 1, heating device only includes therefore a heating element 10 leads to heating device
The temperature of the different zones of supporting part 11 can not be regulated and controled, to can not change corresponding with different zones on substrate 12
The thickness of the film 13 at position.It under normal conditions, only include the heating device part of a heating element 10 to supporting part using
11 when being heated, and the actual temperature of the fringe region of the supporting part 11 is lower than the actual temperature of central area, as shown in Fig. 2,
From the edge of supporting part 11 to center, the temperature of supporting part is stepped up, wherein the actual temperature of the fringe region of supporting part 11
About at 440 DEG C or so, and the temperature of the central area of supporting part is at 452 DEG C or so；Therefore, in the process of deposition film 13
In, the thickness at position corresponding with the fringe region of substrate is less than opposite with the central area of substrate on film 13 on film 13
The thickness at the position answered, as shown in Figure 3.The substrate for resulting in film 13 in this way is easy to appear erosion in subsequent etching processes
It is not thorough (as shown in Figure 4 and Figure 5) or overetched situation quarter.
In order to solve the above technical problems, embodiments, provides a kind of heating devices by the application, chemical gas can be applied to
In phase depositing device.As shown in fig. 6, this heating device includes supporting part 22, heater and adjuster 23, in which:
Supporting part 22 can be used the good material of heating conduction and be made, which can carry substrate 26, that is,
It says, when carrying out chemical vapor deposition process to substrate 26, substrate 26 can be placed on the loading end 220 of supporting part 22, this
Substrate 26 can be wafer.
For example, the size, shape of the loading end 220 of supporting part 22 can be adapted with the size of substrate 26, shape,
That is: in the projection obtained on the direction perpendicular to the loading end 220 of supporting part 22, the perspective plane of loading end 220 can be with lining
The perspective plane at bottom 26 is overlapped, and design in this way can reduce the positioning difficulty of substrate 26 Yu supporting part 22, improves substrate 26 and carrying
The positioning accuracy in portion 22, to guarantee that the heating temperature in each region on substrate 26 meets the requirements.
In addition, the outer edge of loading end 220 is also provided with cyclic annular limiting section 25, it is settable in the ring-type limiting section 25
There is substrate 26.In the present embodiment, the positioning hardly possible of substrate 26 and supporting part 22 can be further decreased by the way that cyclic annular limiting section 25 is arranged
Degree, improves the positioning accuracy of substrate 26 Yu supporting part 22, to guarantee that the heating temperature in each region on substrate 26 meets
It is required that.
Heater is installed on supporting part 22, and the heater can heat supporting part 22, is carried on so as to heat
The substrate 26 in load portion 22, so as to be capable of forming film 27 on the substrate 26, this film 27 can be silica (SiO2), nitrogen oxidation
Silicon (SiON), amorphous silicon (α-Si), silicon nitride (SiN).Wherein, this heater may include multiple heating elements, each heating element
Can be corresponding with the different zones of supporting part 22 respectively, each heating element can on control supporting part 22 independently with its phase
The temperature in corresponding region.
For example, this heater can be embedded in supporting part 22, to reduce the loss of heat, improve heat conduction efficiency.
It should be noted that the heating element can be the structures such as resistance wire or resistor stripe.
As shown in fig. 7, adjuster 23 may include obtaining element 230 and adjustment element 231.This obtains element 230 and can obtain
Etching condition is taken, which is the etching condition when being etched to the substrate 26 for being formed with film 27；Adjustment element
231 connections obtain element 230 and each heating element, the etching item that this adjustment element 231 can be got according to element 230 is obtained
Part carries out independent adjustment to the heating power of each heating element, to adjust the temperature of the different zones of supporting part 22.
In the present embodiment, the etching item when being etched to the substrate 26 for being formed with film 27 is obtained by adjuster 23
Then part carries out independent according to the heating power of etching condition pair each heating element corresponding with the different zones of supporting part 22
Adjustment, to adjust the temperature of the different zones of supporting part 22, it may be assumed that the temperature at position corresponding with different zones on adjustment substrate 26
Degree, so that the thickness profile for being formed in the film 27 of substrate 26 meets etching condition, to alleviate the lining for being formed with film 27
Bottom 26 occurs etching in subsequent etching processes and is not thorough or overetched situation, improves etch uniformity.
For example, as shown in fig. 7, the adjustment element 231 being previously mentioned includes determination unit 2310 and adjustment unit
2311.This determination unit 2310 is connect with element 230 is obtained, and determination unit 2310 can be determined and be held according to etching condition
Size relation between the corresponding etch-rate of the different zones in load portion 22；And adjustment unit 2311 and determination unit 2310 connect
Connect, this adjustment unit 2311 can based on the size relation between etch-rate corresponding with different zones, to not same district
The heating power of the corresponding each heating element in domain carries out independent adjustment, to adjust the temperature of different zones.
In the present embodiment, the temperature of different zones is adjusted by etch-rate corresponding with the different zones of supporting part 22
Degree, with during deposition film 27, so that the thickness of film 27 corresponding with different zones meets etch-rate, with slow
The substrate 26 that solution is formed with film 27 occurs etching in subsequent etching processes and is not thorough or overetched situation, improves erosion
Carve uniformity.
For example, the different zones for the supporting part 22 being previously mentioned may include central area and fringe region, but unlimited
In the two.And multiple heating elements may include the first heating element 20 and the second heating element 21, this first heating element 20
It is corresponding with the central area of supporting part 22, with the central area for heating supporting part 22；This second heating element 21 with hold
The fringe region in load portion 22 is corresponding, with the fringe region for heating supporting part 22.
Based on this, the determination unit 2310 being previously mentioned can be specifically used for opposite with central area according to etching condition determination
The size relation between etch-rate and etch-rate corresponding with fringe region answered；And adjustment unit 2311 can be used specifically
It is right in based on the size relation between etch-rate corresponding with central area and etch-rate corresponding with fringe region
The heating power of first heating element 20 and the second heating element 21 carries out independent adjustment, to adjust central area and fringe region
Temperature so that the thickness of the thickness of film 27 corresponding with central area and film 27 corresponding with fringe region distinguish
Meet corresponding etch-rate, occurs etching not in subsequent etching processes to alleviate the substrate 26 for being formed with film 27
Thorough or overetched situation, improves etch uniformity.
In one embodiment, aforementioned adjustment unit 2311 can be in etching corresponding with the central area of supporting part 22
When rate is equal to etch-rate corresponding with the fringe region of supporting part 22, to the first heating element 20 and the second heating element
21 heating power carries out independent adjustment, so that the heating power of the second heating element 21 is greater than or equal to the first heating element 20
Heating power so that temperature gap between the fringe region and central area of supporting part 22 is the first temperature gap,
Wherein, this first temperature gap can be 0~8 DEG C, as shown in figure 8, the actual temperature of the fringe region of supporting part 22 is about 446
DEG C or so, and the temperature of the central area of supporting part 22 is at 440 DEG C or so；It can make so corresponding with fringe region on substrate 26
Film 27 thickness be equal to substrate 26 on film 27 corresponding with central area thickness, as shown in figure 11, with alleviate exist
When being equal to marginal zone with supporting part 22 in etch-rate corresponding with the central area of supporting part 22 in subsequent etching processes
Occur etching when the corresponding etch-rate in domain to be not thorough or overetched situation, etch uniformity is improved, such as Figure 14 institute
Show.
It should be noted that the size of the loading end 220 of supporting part 22, shape can size, shape phase with substrate 26
When adaptation, due to supporting part 22 fringe region radiating rate compared to supporting part 22 central area radiating rate compared with
Fastly, therefore, it is equal in etch-rate corresponding with the central area of supporting part 22 corresponding with the fringe region of supporting part 22
Etch-rate when, if in order to guarantee during deposition film 27 practical function to substrate 26 fringe region temperature with
The temperature of practical function to the central area of substrate 26 is equal, to guarantee film 27 corresponding with fringe region on substrate 26
Thickness be equal to substrate 26 on film 27 corresponding with central area thickness, then need to the fringe region of supporting part 22
Temperature carries out certain compensation, it may be assumed that adjustment unit 2311 can adjust the heating power of the first heating element 20 is greater than second
The heating power of heating element 21, to guarantee that the temperature of fringe region of supporting part 22 is greater than the temperature of the central area of supporting part 22
Degree；Wherein, it is compensation temperature that the fringe region of supporting part 22, which has more the temperature of the central area of supporting part 22, and the compensation temperature is real
Border is not applied on substrate 26, but is dissipated in the environment.
In another embodiment, adjustment unit 2311 can be in etch-rate corresponding with the central area of supporting part 22
When greater than etch-rate corresponding with the fringe region of supporting part 22, to the first heating element 20 and the second heating element 21
Heating power carries out independent adjustment, so that the heating power of the second heating element 21 is less than or equal to adding for the first heating element 20
Thermal power, so that the temperature gap between the central area and fringe region of supporting part 22 can be second temperature difference,
In, second temperature difference can be 0~15 DEG C, as shown in figure 9, from the edge of supporting part 22 to center, the temperature of supporting part 22 by
Step increases, and the actual temperature of the fringe region of supporting part 22 is about at 442 DEG C or so, and the temperature of the central area of supporting part 22
At 452 DEG C or so；The thickness of film 27 corresponding with fringe region on substrate 26 can in this way be less than on substrate 26 and center
The thickness of the corresponding film 27 in region, as shown in figure 12, to alleviate in subsequent etch process when the center with supporting part 22
Occur etching when the corresponding etch-rate in region is greater than etch-rate corresponding with the fringe region of supporting part 22 to be not thorough
Or overetched situation, etch uniformity is improved, as shown in Figure 14.
In another embodiment, adjustment unit 2311 can be in etch-rate corresponding with the central area of supporting part 22
When less than etch-rate corresponding with the fringe region of supporting part 22, to the first heating element 20 and second heating element
21 heating power carries out independent adjustment, so that the heating power of the second heating element 21 is greater than or equal to the first heating element 20
Heating power so that temperature gap between the fringe region and central area of supporting part 22 is third temperature gap,
Wherein, this third temperature gap can be 8 DEG C~15 DEG C, as shown in Figure 10, from the edge of supporting part 22 to center, supporting part 22
Temperature gradually reduces, and the actual temperature of the fringe region of supporting part 22 is about at 452 DEG C or so, and the central area of supporting part 22
Temperature at 442 DEG C or so；The thickness of film 27 corresponding with fringe region on substrate 26 can in this way be greater than on substrate 26
The thickness of film 27 corresponding with central area, as shown in figure 13, with alleviate in subsequent etch process when with supporting part 22
The corresponding etch-rate in central area be less than etch-rate corresponding with the fringe region of supporting part 22 when etch
It is not thorough or overetched situation, improves etch uniformity, as shown in figure 14.
It should be noted that since the size for the loading end 220 for being previously mentioned supporting part 22, shape can be big with substrate 26
Small, shape is adapted, therefore, the central area for the supporting part 22 mentioned in above-described embodiment and fringe region respectively with substrate
26 central area and fringe region are adapted, that is to say, that mentioning in the present embodiment with supporting part 22 central area phase
Corresponding etch-rate can be regarded as etch-rate corresponding with the central area of substrate 26 of film 27 is formed with, with carrying
The corresponding etch-rate of the fringe region in portion 22 can be regarded as corresponding with the fringe region of substrate 26 of film 27 is formed with
Etch-rate.
In the present embodiment, in heater the heating temperature range of each heating element can at 200 DEG C~600 DEG C, such as: 200
DEG C, 300 DEG C, 400 DEG C, 500 DEG C, 600 DEG C, but not limited to this, it is depending on the circumstances.
For example, as shown in fig. 6, the second heating element 21 being previously mentioned may be provided with locating slot 210, the first heating
Element 20 is mountable in locating slot 210, designs the installation that the first heating element 20 and the second heating element 21 can be improved in this way
Efficiency, and simplify the structure of heater.It should be understood that the portion on the second heating element 21 in addition to locating slot 210
Position is corresponding with the fringe region of supporting part 22, for heating the fringe region of supporting part 22, and is mounted in locating slot 210
The first heating element 20 it is corresponding with the central area of supporting part 22, for heating the central area of supporting part 22.
Wherein, it influences each other during the work time to alleviate the first heating element 20 with the second heating element 21, thus
There is the case where deviation in the temperature of the central area and fringe region that lead to supporting part 22, can be in the first heating in the present embodiment
Thermal isolation film is set between element 20 and the second heating element 21.
In addition, each radio-frequency filter 24 can divide as shown in fig. 6, the heating device may also include multiple radio-frequency filters 24
It is not connected in series with each heating element.
The embodiment of the present application also provides a kind of adjusting method of heating device, which can be aforementioned any implementation
The heating device that example is mentioned, the adjusting method of this heating device can include:
Step S1, obtains etching condition, this etching condition is when being etched to the substrate 26 for being formed with film 27
Etching condition；
Step S2 carries out independent adjustment according to heating power of the etching condition to each heating element, to adjust supporting part 22
Different zones temperature.
In the present embodiment, by obtaining the etching condition when being etched to the substrate 26 for being formed with film 27, then
Independent adjustment is carried out according to the heating power of etching condition pair each heating element corresponding with the different zones of supporting part 22, with
Adjust the temperature of the different zones of supporting part 22, it may be assumed that the temperature at position corresponding with different zones on adjustment substrate 26, thus
So that the thickness profile for being formed in the film 27 of substrate 26 meets etching condition, existed with the substrate 26 that alleviation is formed with film 27
Occur etching in subsequent etching processes to be not thorough or overetched situation, improves etch uniformity.
Wherein, independent adjustment is carried out according to heating power of the etching condition to each heating element, to adjust supporting part 22
The temperature of different zones, it may include:
Step S10, according to the size relation between the determining etch-rate corresponding with different zones of etching condition；
Step S12, based on the size relation between etch-rate corresponding with different zones, to opposite with different zones
The heating power for each heating element answered carries out independent adjustment, to adjust the temperature of different zones.
In the present embodiment, the temperature of different zones is adjusted by etch-rate corresponding with the different zones of supporting part 22
Degree, with during deposition film 27, so that the thickness of film 27 corresponding with different zones meets etch-rate, with slow
The substrate 26 that solution is formed with film 27 occurs etching in subsequent etching processes and is not thorough or overetched situation, improves erosion
Carve uniformity.
For example, the different zones for being previously mentioned supporting part 22 may include central area and fringe region, multiple heating
Element includes the first heating element 20 corresponding with central area and the second heating element 21 corresponding with fringe region.
Based on this, the step S10 being previously mentioned can be specially to determine erosion corresponding with central area according to etching condition
Size relation between etching speed and etch-rate corresponding with fringe region；And step S12 can be specially based on and center
Size relation between the corresponding etch-rate in region and etch-rate corresponding with fringe region, to the first heating element
20 and second the heating power of heating element 21 carry out independent adjustment, to adjust the temperature of central area and fringe region so that
The thickness of the thickness of film 27 corresponding with central area and film 27 corresponding with fringe region corresponds with phase therewith
There is etching with the substrate 26 that alleviation is formed with film 27 in subsequent etching processes and is not thorough or etches in corresponding etch-rate
Excessive situation, improves etch uniformity.
In one embodiment, in step s 12, it may include: etch-rate corresponding with central area be equal to
When the corresponding etch-rate of fringe region, the heating power of the first heating element 20 and the second heating element 21 is carried out independent
Adjustment, so that temperature gap between fringe region and central area is the first temperature gap, wherein the first temperature gap can be
0~8 DEG C, the thickness of film 27 corresponding with fringe region on substrate 26 can in this way be equal on substrate 26 and central area phase
The thickness of corresponding film 27, as shown in figure 11, to alleviate in subsequent etching processes when in the central area with supporting part 22
Occur etching when corresponding etch-rate is equal to etch-rate corresponding with the fringe region of supporting part 22 to be not thorough or lose
Excessive situation is carved, etch uniformity is improved.
In another embodiment, in step s 12, it may include: it is greater than in etch-rate corresponding with central area
When etch-rate corresponding with fringe region, the heating power of the first heating element 20 and the second heating element 21 is carried out only
Vertical adjustment, so that the temperature gap between central area and fringe region is second temperature difference, wherein second temperature difference can
It is 0~15 DEG C, the thickness of film 27 corresponding with fringe region on substrate 26 can in this way be less than on substrate 26 and center
The thickness of the corresponding film 27 in domain, as shown in figure 12, to alleviate in subsequent etch process when the center with supporting part 22
The corresponding etch-rate in domain be greater than etch-rate corresponding with the fringe region of supporting part 22 when occur etching be not thorough or
Overetched situation, improves etch uniformity.
In yet another embodiment, in step s 12, it may include: it is less than in etch-rate corresponding with central area
When etch-rate corresponding with fringe region, the heating power of the first heating element 20 and the second heating element 21 is carried out only
Vertical adjustment, so that the temperature gap between fringe region and central area is third temperature gap, wherein third temperature gap is
8 DEG C~15 DEG C, the thickness of film 27 corresponding with fringe region on substrate 26 can in this way be greater than on substrate 26 and center
The thickness of the corresponding film 27 in domain, as shown in figure 13, to alleviate in subsequent etch process when the center with supporting part 22
The corresponding etch-rate in domain be less than etch-rate corresponding with the fringe region of supporting part 22 when occur etching be not thorough or
Overetched situation, improves etch uniformity.
The embodiment of the present application also provides a kind of chemical vapor depsotition equipments comprising the heating device of any of the above-described.
Those skilled in the art after considering the specification and implementing the invention disclosed here, will readily occur to its of the application
Its embodiment.This application is intended to cover any variations, uses, or adaptations of the application, these modifications, purposes or
Person's adaptive change follows the general principle of the application and including the undocumented common knowledge in the art of the application
Or conventional techniques.The description and examples are only to be considered as illustrative, and the true scope and spirit of the application are by appended
Claim is pointed out.
Claims (9)
1. a kind of heating device characterized by comprising
Supporting part can carry substrate；
Heater is installed on the supporting part, and the heater can heat the supporting part, so as to be carried on the supporting part
Substrate on be capable of forming film, and the heater includes multiple heating elements, and each heating element is held with described respectively
The different zones in load portion are corresponding；
Adjuster, the adjuster include obtaining element and the connection adjustment member for obtaining element and each heating element
Part, the acquisition element can obtain etching condition, and the etching condition is when being etched to the substrate for being formed with film
Etching condition；The adjustment element can carry out independent according to heating power of the etching condition to each heating element
Adjustment, to adjust the temperature of the different zones of the supporting part.
2. heating device according to claim 1, which is characterized in that the adjustment element includes:
Determination unit is connect with the acquisition element, and can be opposite with the different zones according to etching condition determination
The size relation between etch-rate answered；
Adjustment unit is connect with the determination unit, and the adjustment unit can be based on erosion corresponding with the different zones
Size relation between etching speed carries out the heating power of each heating element corresponding with the different zones independent
Adjustment, to adjust the temperature of the different zones.
3. heating device according to claim 2, which is characterized in that
The different zones include central area and fringe region, and the multiple heating element includes opposite with the central area
The first heating element and the second heating element corresponding with the fringe region answered.
4. heating device according to claim 3, which is characterized in that
Second heating element is provided with locating slot, and first heating element is mounted in the locating slot.
5. heating device according to claim 4, which is characterized in that
Thermal isolation film is set between first heating element and second heating element.
6. heating device according to claim 1, which is characterized in that
In the projection obtained on the direction of the loading end perpendicular to the supporting part, the perspective plane of the loading end can be with institute
The perspective plane for stating substrate is overlapped.
7. heating device according to claim 1, which is characterized in that
The outer edge of the loading end of the supporting part is provided with cyclic annular limiting section, can be provided in the ring-type limiting section described
Substrate.
8. heating device according to claim 1, which is characterized in that
The heater is embedded in the supporting part.
9. a kind of chemical vapor depsotition equipment, which is characterized in that including heating device described in any item of the claim 1 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821697778.2U CN209194060U (en) | 2018-10-19 | 2018-10-19 | Heating device and chemical vapor depsotition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821697778.2U CN209194060U (en) | 2018-10-19 | 2018-10-19 | Heating device and chemical vapor depsotition equipment |
Publications (1)
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| CN110565074A (en) * | 2019-09-17 | 2019-12-13 | 北京北方华创微电子装备有限公司 | Susceptor heating method and susceptor heating apparatus |
| CN110923672A (en) * | 2019-12-17 | 2020-03-27 | Tcl华星光电技术有限公司 | Heating device and chemical vapor deposition equipment |
| CN111074242A (en) * | 2018-10-19 | 2020-04-28 | 长鑫存储技术有限公司 | Adjusting method of heating device, heating device and chemical vapor deposition equipment |
| CN111403319A (en) * | 2020-03-23 | 2020-07-10 | 宁波润华全芯微电子设备有限公司 | Wafer heater |
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| CN114517290A (en) * | 2022-01-21 | 2022-05-20 | 中环领先半导体材料有限公司 | APCVD film forming processing technology for improving film thickness uniformity of LTO film |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111074242A (en) * | 2018-10-19 | 2020-04-28 | 长鑫存储技术有限公司 | Adjusting method of heating device, heating device and chemical vapor deposition equipment |
| CN110565074A (en) * | 2019-09-17 | 2019-12-13 | 北京北方华创微电子装备有限公司 | Susceptor heating method and susceptor heating apparatus |
| CN110565074B (en) * | 2019-09-17 | 2021-10-15 | 北京北方华创微电子装备有限公司 | Susceptor heating method and susceptor heating apparatus |
| CN110923672A (en) * | 2019-12-17 | 2020-03-27 | Tcl华星光电技术有限公司 | Heating device and chemical vapor deposition equipment |
| CN111403319A (en) * | 2020-03-23 | 2020-07-10 | 宁波润华全芯微电子设备有限公司 | Wafer heater |
| CN111415887A (en) * | 2020-03-27 | 2020-07-14 | 宁波润华全芯微电子设备有限公司 | Wafer heating device |
| CN112144044A (en) * | 2020-09-21 | 2020-12-29 | 长江存储科技有限责任公司 | Thin film preparation device, control method of thin film preparation device and control device |
| CN113201727A (en) * | 2021-04-28 | 2021-08-03 | 錼创显示科技股份有限公司 | Semiconductor wafer bearing structure and organic metal chemical vapor deposition device |
| CN113201727B (en) * | 2021-04-28 | 2023-02-28 | 錼创显示科技股份有限公司 | Semiconductor wafer bearing structure and organic metal chemical vapor deposition device |
| CN114517290A (en) * | 2022-01-21 | 2022-05-20 | 中环领先半导体材料有限公司 | APCVD film forming processing technology for improving film thickness uniformity of LTO film |
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