CN114517290A - APCVD film forming processing technology for improving film thickness uniformity of LTO film - Google Patents
APCVD film forming processing technology for improving film thickness uniformity of LTO film Download PDFInfo
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- CN114517290A CN114517290A CN202210071188.3A CN202210071188A CN114517290A CN 114517290 A CN114517290 A CN 114517290A CN 202210071188 A CN202210071188 A CN 202210071188A CN 114517290 A CN114517290 A CN 114517290A
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- 238000012545 processing Methods 0.000 title claims abstract description 8
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 title abstract 4
- 238000006243 chemical reaction Methods 0.000 claims abstract description 29
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000001301 oxygen Substances 0.000 claims abstract description 16
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 16
- 229910000077 silane Inorganic materials 0.000 claims abstract description 16
- 239000000498 cooling water Substances 0.000 claims abstract description 11
- 230000000694 effects Effects 0.000 claims abstract description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 8
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 8
- 238000013461 design Methods 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 230000006872 improvement Effects 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 30
- 230000008569 process Effects 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052710 silicon Inorganic materials 0.000 abstract description 12
- 239000010703 silicon Substances 0.000 abstract description 12
- 230000002265 prevention Effects 0.000 abstract 1
- 230000009471 action Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses an APCVD film forming processing technology for improving the film thickness uniformity of LTO, which comprises the following steps: s1, firstly, connecting and combining pipelines of an APCVD device in real time, introducing a certain amount of silane and oxygen into the APCVD device, heating to generate a chemical reaction to form a silicon dioxide film, and effectively influencing the film growing speed at different positions by controlling the temperature of a reaction region in real time, thereby further improving the uniformity of the film, S2, then because of the cooling water distribution of the device and the structural design of the device, the actual temperature in the middle of the reaction cavity is the highest, and the temperature setting is lower than that at two sides, but because the device is at the position of an exhaust outlet, the actual temperature is higher than that at two sides, the improvement of the uniformity of the film thickness of the silicon wafer is effectively realized, the self-doping prevention effect of the film is favorably realized, and the appearance of the silicon wafer is more in accordance with the requirements.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to an APCVD (advanced chemical vapor deposition) film forming processing technology for improving the film thickness uniformity of LTO (low temperature oxide).
Background
When the silicon wafer is subjected to APCVD chemical vapor deposition of a silicon dioxide film, due to the problem of equipment structure, the thickness of the deposited film at different positions of the silicon wafer is different due to different gas distribution and different heat dissipation conditions in three areas in the equipment, so that the uniformity of the film thickness of the silicon wafer is influenced, wherein the thickness of the film at the inner side area is thicker, and the whole film thickness is in block distribution.
Disclosure of Invention
The invention aims to provide an APCVD film forming processing technology for improving the thickness uniformity of LTO film, which aims to solve the problems that the thickness uniformity of the silicon film is influenced by the difference of the deposited film at different positions of the silicon wafer due to the difference of the gas distribution and different heat dissipation conditions in the three areas in the device and the thickness uniformity of the silicon film is mainly shown in that the film thickness of the inner area is thicker and the whole film thickness is distributed in block shape when the silicon wafer provided by the background technology is subjected to APCVD chemical vapor deposition of a silicon dioxide film.
In order to achieve the purpose, the invention provides the following technical scheme: an APCVD film forming process for improving the film thickness uniformity of LTO, which comprises the following steps:
s1, firstly, connecting and combining pipelines of the APCVD equipment in real time, introducing a certain amount of silane and oxygen into the APCVD equipment, heating to perform chemical reaction to form a silicon dioxide film, and controlling the temperature of a reaction area in real time to effectively influence the film growing rate at different positions so as to improve the uniformity of the film;
s2, then, because of the cooling water distribution of the equipment and the structural design of the equipment, the actual temperature of the middle part in the reaction cavity is the highest, and the temperature setting needs to be lower than that of the two sides, but because the reaction cavity is positioned at the exhaust outlet, the actual temperature needs to be higher than that of the two sides;
s3, finally, because the inside and outside sides of the machine table are influenced by cooling water to cause more temperature loss, the setting temperature of the machine table is higher than the middle part, the heat gas loss of the inner side of the equipment is relatively less relative to the outer side of the equipment, the temperature setting of the inner side of the equipment is lower than the temperature of the outer side, the equipment temperature is set to be low in the middle part, the inner side is centered, the outer side is high under the comprehensive equipment condition, and meanwhile, the effects of low inner side, high middle and centered outer side of the actual temperature are achieved.
Preferably, the parameter range value of the film formation thickness is 5000 ± 500, the parameter range value of the silane is 90 ± 10, the parameter range value of the oxygen is 1080 ± 120, and the parameter range value of the APC pressure is 200 Pa.
Preferably, the ratio of silane to oxygen fed into the APCVD equipment during the reaction is 1:12, and the running speed of the tray is 360 mm/min.
Preferably, the set temperature of R (inner side) after the process improvement is 660 +/-50, the actual temperature is 420 +/-50, the set temperature of M (middle) is 640 +/-50, the actual temperature is 440 +/-50, the set temperature of F (outer side) is 680 +/-50, and the actual temperature is 430 +/-50.
Compared with the prior art, the invention has the beneficial effects that:
the invention changes the previous conditions that the set temperature is the same and the actual temperature is different after optimizing the process, takes the actual temperature close as the process target, greatly improves the film forming uniformity, effectively realizes the improvement of the film thickness uniformity of the silicon chip, is beneficial to better playing the role of preventing the self-doping of the film and simultaneously leads the appearance to be more in line with the requirement.
Drawings
FIG. 1 is a table comparing the temperature of the initial process and the improved process of the present invention.
FIG. 2 is a table comparing the film formation uniformity of the new and old processes of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-2, an APCVD process for improving the uniformity of LTO film thickness includes the following steps:
s1, firstly, connecting and combining pipelines of the APCVD equipment in real time, introducing a certain amount of silane and oxygen into the APCVD equipment, heating to perform chemical reaction to form a silicon dioxide film, and controlling the temperature of a reaction area in real time to effectively influence the film growing rate at different positions so as to improve the uniformity of the film;
s2, then, because of the cooling water distribution of the equipment and the structural design of the equipment, the actual temperature of the middle part in the reaction cavity is the highest, and the temperature setting needs to be lower than that of the two sides, but because the reaction cavity is positioned at the exhaust outlet, the actual temperature needs to be higher than that of the two sides;
s3, finally, because the inside and outside sides of the machine table are influenced by cooling water, the temperature loss is more, the temperature setting of the machine table is higher than the middle part, the heat gas loss is relatively less on the inner side of the equipment relative to the outer side of the equipment, the temperature setting of the machine table is lower than the temperature on the outer side, the temperature of the equipment is set to be lower in the middle part, the inner side is centered, the outer side is high under the comprehensive equipment condition, the effects of low inner side, high middle and centered outer side of the actual temperature are achieved, the temperature of the corresponding part can be more appropriate, and the film forming effect and uniformity are integrally improved.
In this embodiment: the range of the film forming thickness is 5000 + -500, the range of the silane parameter is 90 + -10, the range of the oxygen parameter is 1080 + -120, and the range of the APC pressure parameter is 200 Pa.
In this embodiment: during reaction, the ratio of silane to oxygen introduced by APCVD equipment is 1:12, and the running speed of the tray is 360mm/min, so that the overall reaction effect is more reliable, and the accuracy of a process test is effectively improved.
In this embodiment: after the process is improved, the set temperature of R (inner side) is 660 +/-50, the actual temperature is 420 +/-50, the set temperature of M (middle) is 640 +/-50, the actual temperature is 440 +/-50, the set temperature of F (outer side) is 680 +/-50, and the actual temperature is 430 +/-50, the condition that the prior set temperature is the same and the actual temperature is different is changed after the process is optimized, the actual temperatures are close to each other and taken as the process target, and the film forming uniformity is improved.
The first embodiment is as follows:
an APCVD film forming process for improving the film thickness uniformity of LTO, which comprises the following steps:
s1, firstly, connecting and combining pipelines of the APCVD equipment in real time, introducing a certain amount of silane and oxygen into the APCVD equipment, heating to perform chemical reaction to form a silicon dioxide film, and controlling the temperature of a reaction area in real time to effectively influence the film growing rate at different positions so as to improve the uniformity of the film;
s2, then, because of the cooling water distribution of the equipment and the structural design of the equipment, the actual temperature of the middle part in the reaction cavity is the highest, and the temperature setting needs to be lower than that of the two sides, but because the reaction cavity is positioned at the exhaust outlet, the actual temperature needs to be higher than that of the two sides;
s3, finally, because the inside and outside sides of the machine table are influenced by cooling water to cause more temperature loss, the setting temperature of the machine table is higher than the middle part, the heat gas loss of the inner side of the equipment is relatively less relative to the outer side of the equipment, the temperature setting of the inner side of the equipment is lower than the temperature of the outer side, the equipment temperature is set to be low in the middle part, the inner side is centered, the outer side is high under the comprehensive equipment condition, and meanwhile, the effects of low inner side, high middle and centered outer side of the actual temperature are achieved.
In this embodiment: the range of the film forming thickness is 8000 + -800, the range of the silane parameter is 150 + -50, the range of the oxygen parameter is 1500 + -220, and the range of the APC pressure parameter is 400 Pa.
In this embodiment: during the reaction, the APCVD equipment is introduced with silane and oxygen in the ratio of 5:20, and the tray running speed is 460 mm/min.
In this embodiment: after the process is improved, the set temperature of R (inner side) is 660 +/-50, the actual temperature is 420 +/-50, the set temperature of M (middle) is 640 +/-50, the actual temperature is 440 +/-50, the set temperature of F (outer side) is 680 +/-50, and the actual temperature is 430 +/-50.
Example two:
an APCVD film forming process for improving the film thickness uniformity of LTO, which comprises the following steps:
s1, firstly, connecting and combining pipelines of the APCVD equipment in real time, introducing a certain amount of silane and oxygen into the APCVD equipment, heating to perform chemical reaction to form a silicon dioxide film, and controlling the temperature of a reaction area in real time to effectively influence the film growing rate at different positions so as to improve the uniformity of the film;
s2, then, because of the cooling water distribution of the equipment and the structural design of the equipment, the actual temperature in the middle of the reaction cavity is the highest, the temperature setting needs to be lower than that on two sides, but because the reaction cavity is positioned at the exhaust outlet, the actual temperature needs to be higher than that on two sides;
s3, finally, because the inside and outside sides of the machine table are influenced by cooling water to cause more temperature loss, the setting temperature of the machine table is higher than the middle part, the heat gas loss of the inner side of the equipment is relatively less relative to the outer side of the equipment, the temperature setting of the inner side of the equipment is lower than the temperature of the outer side, the equipment temperature is set to be low in the middle part, the inner side is centered, the outer side is high under the comprehensive equipment condition, and meanwhile, the effects of low inner side, high middle and centered outer side of the actual temperature are achieved.
In this embodiment: the range of the film forming thickness parameter is 5000 + -500, the range of the silane parameter is 70 + -5, the range of the oxygen parameter is 900 + -100, and the range of the APC pressure parameter is 50 Pa.
In this embodiment: during the reaction, the ratio of silane to oxygen introduced by the APCVD equipment is 0.5:6, and the running speed of the tray is 150 mm/min.
In this embodiment: after the process is improved, the set temperature of R (inner side) is 660 +/-50, the actual temperature is 420 +/-50, the set temperature of M (middle) is 640 +/-50, the actual temperature is 440 +/-50, the set temperature of F (outer side) is 680 +/-50, and the actual temperature is 430 +/-50.
In conclusion, it can be seen that: it can be seen from the comparison between the above 2 groups of embodiments and the present invention that the method required by the present invention changes the previous situation that the set temperature is the same and the actual temperature is different after the process is optimized, and takes the approach of the actual temperature as the process target, the film forming uniformity can be greatly improved, the improvement of the film thickness uniformity of the silicon wafer can be more effectively realized, the effect of preventing the self-doping of the film can be more favorably realized, and the appearance of the silicon wafer can better meet the requirements.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (4)
1. An APCVD film forming processing technology for improving the film thickness uniformity of LTO is characterized in that: the processing technology comprises the following steps:
s1, firstly, connecting and combining pipelines of an APCVD device in real time, introducing a certain amount of silane and oxygen into the APCVD device, heating to perform a chemical reaction to form a silicon dioxide film, and controlling the temperature of a reaction area in real time to effectively influence the film growing rate at different positions so as to improve the uniformity of the film;
s2, then, because of the cooling water distribution of the equipment and the structural design of the equipment, the actual temperature of the middle part in the reaction cavity is the highest, and the temperature setting needs to be lower than that of the two sides, but because the reaction cavity is positioned at the exhaust outlet, the actual temperature needs to be higher than that of the two sides;
s3, finally, because the inside and outside sides of the machine table are influenced by cooling water to cause more temperature loss, the setting temperature of the machine table is higher than the middle part, the heat gas loss of the inner side of the equipment is relatively less relative to the outer side of the equipment, the temperature setting of the inner side of the equipment is lower than the temperature of the outer side, the equipment temperature is set to be low in the middle part, the inner side is centered, the outer side is high under the comprehensive equipment condition, and meanwhile, the effects of low inner side, high middle and centered outer side of the actual temperature are achieved.
2. The APCVD (advanced chemical vapor deposition) film forming process for improving the film thickness uniformity of LTO (low temperature oxide) according to claim 1, wherein the APCVD film forming process comprises the following steps: the parameter range value of the film forming thickness is 5000 +/-500, the parameter range value of the silane is 90 +/-10, the parameter range value of the oxygen is 1080 +/-120, and the parameter range value of the APC pressure is 200 Pa.
3. The APCVD (advanced chemical vapor deposition) film forming process for improving the film thickness uniformity of LTO (low temperature oxide) according to claim 1, wherein the APCVD film forming process comprises the following steps: the ratio of silane to oxygen introduced by the APCVD equipment during the reaction is 1:12, and the running speed of the tray is 360 mm/min.
4. The APCVD (advanced chemical vapor deposition) film forming process for improving the film thickness uniformity of LTO (low temperature oxide) according to claim 1, wherein the APCVD film forming process comprises the following steps: the set temperature of R (inner side) after the process improvement is 660 +/-50, the actual temperature is 420 +/-50, the set temperature of M (middle) is 640 +/-50, the actual temperature is 440 +/-50, the set temperature of F (outer side) is 680 +/-50, and the actual temperature is 430 +/-50.
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| CN110578132A (en) * | 2019-09-09 | 2019-12-17 | 长江存储科技有限责任公司 | Chemical vapor deposition method and apparatus |
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2022
- 2022-01-21 CN CN202210071188.3A patent/CN114517290A/en active Pending
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| US6429152B1 (en) * | 2001-06-21 | 2002-08-06 | United Microelectronics Corp. | Method of forming a thin film on a semiconductor wafer |
| CN1555424A (en) * | 2001-08-23 | 2004-12-15 | Ӧ�ò��Ϲ�˾ | Process for controlling thin film uniformity and products produced thereby |
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Application publication date: 20220520 |