CN114635122B - Chemical vapor deposition heating device - Google Patents

Chemical vapor deposition heating device Download PDF

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CN114635122B
CN114635122B CN202210546325.4A CN202210546325A CN114635122B CN 114635122 B CN114635122 B CN 114635122B CN 202210546325 A CN202210546325 A CN 202210546325A CN 114635122 B CN114635122 B CN 114635122B
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heating plate
heating
outer diameter
handle
temperature
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CN114635122A (en
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刘婷婷
郭月
杨艳
姜崴
谈太德
苏欣
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Piotech Beijing Co Ltd
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Piotech Beijing Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention provides a chemical vapor deposition heating device, which comprises a heating plate and a handle part, wherein the handle part is tubular, one end of the handle part is fixed on the heating plate, the ratio of the outer diameter of the heating plate to the outer diameter of the handle part is more than or equal to 3 and less than or equal to 6, and the ratio of the outer diameter of the heating plate to the inner diameter of the handle part is more than 6. The wall thickness of the handle part is increased, so that the contact area between the handle part and the heating plate is increased, heat generated in the process is guided away more quickly, the temperature of the heating plate is quickly returned to a set value, over-temperature alarm of the heating plate cannot occur during continuous deposition, a large amount of slide can be realized, and the requirement of productivity is met.

Description

Chemical vapor deposition heating device
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a chemical vapor deposition heating device.
Background
Most of existing Plasma Enhanced Chemical Vapor Deposition (PECVD) equipment are high-temperature processes, the working temperature is generally higher than 350 ℃, heat released by chemical reaction in the process can lead the temperature of a heating plate to rise, and the temperature controller can sense the temperature change of the heating plate to realize automatic adjustment, so that the temperature stability of the heating plate can be ensured, and continuous plate running is realized.
With the development of advanced packaging technology, a low-temperature PECVD process with a working temperature of 150 ℃ or higher is gradually applied. Existing PECVD apparatus include a heating disk and a shank, the ratio of the outer diameter of the heating disk to the shank is typically greater than 6. For a thick film process with a thin film thickness greater than 30000A, due to the fact that deposition time is long and heat generated is large, the temperature of the heater cannot return to a set value even if the heater is enabled to be closed by proportional, integral and differential temperature control (PID) adjustment of the heating disk, and over-temperature alarm can occur on the heating disk when several pairs of wafers are continuously deposited, if the number of pairs of wafers is less than 4, so that productivity cannot meet requirements.
Therefore, there is a need to provide a novel heating apparatus for chemical vapor deposition to solve the above-mentioned problems in the prior art.
Disclosure of Invention
The invention aims to provide a chemical vapor deposition heating device, which can lead away heat generated in the process more quickly, avoid the over-temperature alarm of a heating plate during continuous deposition, realize a large amount of running sheets and meet the requirement of capacity.
To achieve the above object, the chemical vapor deposition heating apparatus of the present invention is characterized by comprising a heating plate and a shank, the shank being tubular, one end of the shank being fixed to the heating plate, a ratio of an outer diameter of the heating plate to an outer diameter of the shank being greater than or equal to 3.
The chemical vapor deposition heating device has the beneficial effects that: the ratio of the outer diameter of the heating plate to the outer diameter of the handle is more than or equal to 3 and less than or equal to 6, and the ratio of the outer diameter of the heating plate to the inner diameter of the handle is more than 6 and less than or equal to 12, so that the wall thickness of the handle is increased, the contact area of the handle and the heating plate is increased, heat generated in the process is led away more quickly, the temperature of the heating plate is quickly returned to a set value, an over-temperature alarm of the heating plate cannot occur during continuous deposition, a large number of running sheets can be realized, and the requirement on productivity is met.
Optionally, the ratio of the outer diameter of the heating disk to the outer diameter of the shank is greater than or equal to 3 and less than or equal to 6, and the ratio of the outer diameter of the heating disk to the inner diameter of the shank is greater than or equal to 20.
Optionally, the ratio of the outer diameter of the heating disk to the outer diameter of the shank is greater than or equal to 5. When the internal diameter is unchangeable, during the increase external diameter, increased the wall thickness of stalk portion for the stalk portion with heating plate area of contact increases, makes the heat that produces in the technological process lead away more fast, and then makes heating plate temperature gets back to the setting value fast, can not take place the heating plate when continuous deposit and overtemperature alarm, and then can realize a large amount of running pieces.
Optionally, a first heating wire is arranged in the heating plate and used for heating the heating plate.
Optionally, a first conductor is disposed inside the handle, and the first conductor is connected to the first heating wire and is used for connecting the first heating wire and the power supply end.
Optionally, the chemical vapor deposition heating apparatus further includes a heating plate water cooling system, and the heating plate water cooling system is connected to the other end of the handle portion, and is configured to derive heat of the heating plate.
The water cooling disc is used as an independent water cooling system and is in direct contact with the other end of the handle part, so that the heat of the heating disc can be led out more quickly.
Optionally, the heating plate water cooling system comprises a water cooling plate, a water inlet and a water outlet, a water channel is arranged in the water cooling plate, and the water inlet and the water outlet are communicated with the water channel.
Optionally, the water-cooled disc is in threaded connection with the other end of the shank.
Drawings
FIG. 1 is a schematic diagram of a CVD heating apparatus according to some embodiments of the invention;
fig. 2 is a schematic diagram of a hot plate water cooling system in accordance with some embodiments of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. Unless defined otherwise, technical or scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. As used herein, the word "comprising" and similar words are intended to mean that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items.
In order to solve the problems in the prior art, embodiments of the present invention provide a heating apparatus for chemical vapor deposition. Referring to fig. 1, the chemical vapor deposition heating apparatus includes a heating plate 1 and a handle 2, the handle 2 is tubular, one end of the handle 2 is fixed to the heating plate 1, a ratio of an outer diameter c of the heating plate 1 to an outer diameter a of the handle 2 is 3.
The chemical vapor deposition heating device has the beneficial effects that: the ratio of the outer diameter of the heating plate to the outer diameter of the handle is greater than or equal to 3 and less than or equal to 6, and the ratio of the outer diameter of the heating plate to the inner diameter of the handle is greater than 6 and less than or equal to 12, so that the wall thickness of the handle is increased, the contact area between the handle and the heating plate is increased, heat generated in the process is conducted away more quickly, the temperature of the heating plate is quickly returned to a set value, and an over-temperature alarm of the heating plate does not occur during continuous deposition, so that a large number of running sheets can be realized, and the requirement of productivity is met.
Referring to fig. 1, one end of the shank 2 is fixed to the bottom center position of the heating pan 1, and the axis of the shank 2 coincides with the axis of the heating pan 1.
In some embodiments, the ratio of the outer diameter of the heating disk to the outer diameter of the handle is greater than or equal to 3.
In some embodiments, the ratio of the outer diameter of the heating disk to the outer diameter of the shank is greater than or equal to 5. When the internal diameter is unchangeable, during the increase external diameter, increased the wall thickness of stalk portion for the stalk portion with heating plate area of contact increases, makes the heat that produces in the technological process lead away more fast, and then makes heating plate temperature gets back to the setting value fast, can not take place the heating plate when continuous deposit and overtemperature alarm, and then can realize a large amount of running pieces.
Referring to fig. 1, a first heating wire 11 is disposed in the heating plate 1, and the first heating wire 11 is used for heating the heating plate 1.
Referring to fig. 1, a first electric conductor 21 is disposed inside the handle 2, and the first electric conductor 21 is connected to the first heating wire 11 for connecting the first heating wire 11 to a power supply terminal (not shown).
Referring to fig. 1, the cvd heating apparatus further includes a heating plate water-cooling system 3, and the heating plate water-cooling system 3 is in contact with the other end of the handle 2. Heating plate water cooling system 3 is as independent water cooling system, with the other end direct contact of stalk portion can with the heat of heating plate is faster derives.
Referring to fig. 1, in some embodiments, the heating plate water cooling system 3 includes a water cooling plate 31, a water inlet 32, and a water outlet 33, a water channel is provided in the water cooling plate 31, and both the water inlet 32 and the water outlet 33 are communicated with the water channel.
Fig. 2 is a schematic structural diagram of a heating disc water cooling system. Referring to fig. 2, the heating plate water cooling system 3 includes a water cooling plate 31, a water inlet 32 and a water outlet 33, the water channel 34 is fixed inside the water cooling plate 31, the water cooling plate 31 is a cylinder, the water channel 34 adopts a double-layer water channel formed from an inner ring to an outer ring, so that circulating water with low temperature firstly reaches a region with high temperature at the central part, the temperature of the high temperature region is effectively reduced, then the circulating water is circulated from the periphery, and the cooling effect is good. The water cooling disc is used as an independent water cooling system and is in direct contact with the other end of the handle part, so that the heat of the heating disc can be led out more quickly.
Referring to fig. 1, in some embodiments, the water disk 31 is threadably connected to the shank 2.
The heat dissipation effect of the ion-enhanced chemical vapor deposition heating apparatus provided by the present invention is further illustrated by the following examples, in which the upper alarm limit temperature of the heating disk 1 is 7.5-15 ℃, and the film thickness is 30000 a.
Comparative example
Before transformation, the other end of the handle is connected with a water-cooling disc 31, the ratio of the outer diameter c of the heating disc 1 to the outer diameter a of the handle 2 is 7.
Figure 546195DEST_PATH_IMAGE001
Example 1
After modification, the other end of the handle is connected with a water-cooling disc 31, the ratio of the outer diameter c of the heating disc 1 to the outer diameter a of the handle 2 is 6.
Figure 257668DEST_PATH_IMAGE002
Example 2
After modification, the other end of the handle is connected without a water-cooling disc 31, the ratio of the outer diameter c of the heating disc 1 to the outer diameter a of the handle 2 is 5.
Figure 795353DEST_PATH_IMAGE003
Example 3
After modification, the other end of the handle is connected with a water-cooling disc 31, the ratio of the outer diameter c of the heating disc 1 to the outer diameter a of the handle 2 is 3.
Figure 1206DEST_PATH_IMAGE004
Example 4
After modification, the other end of the handle is connected with a water-cooling disc 31, the ratio of the outer diameter c of the heating disc 1 to the outer diameter a of the handle 2 is 5.
Figure 118067DEST_PATH_IMAGE005
Example 5
After modification, the other end of the handle is connected with a water-cooling disc 31, the ratio of the outer diameter c of the heating disc 1 to the outer diameter a of the handle 2 is 6.
Figure 16753DEST_PATH_IMAGE006
Example 6
After modification, the other end of the handle is connected with a water-cooling disc 31, the ratio of the outer diameter c of the heating disc 1 to the outer diameter a of the handle 2 is 3.
Figure 320695DEST_PATH_IMAGE007
Example 7
Example 7 in addition to example 1, the connection of a water-cooled disc 31 is added at the other end of the shank 2. Table 8 provides the starting temperature and ending temperature of the modified 10 pairs of wafers during deposition, the initial temperature of the heating plate during deposition of the 1 st pair of wafers is 150 ℃, the temperature of the heating plate during deposition of the 10 th pair of wafers is 155.1 ℃, the temperature of the heating plate 1 is increased by 5.1 ℃ during continuous deposition of the 10 th pair of wafers, and the temperature is still within the alarm temperature control range at this time.
Figure 986032DEST_PATH_IMAGE008
Comparison of test results of comparative example, example 1 and example 2 and comparison of test results of examples 4 and 5 show that the outer diameter of the handle is increased, so that the wall thickness of the handle is increased, the contact area between the handle and the heating plate is increased, heat generated in the process is conducted away more quickly, the temperature of the heating plate is quickly returned to a set value, an over-temperature alarm of the heating plate cannot occur during continuous deposition, a large amount of running sheets can be realized, and the requirement of productivity is met.
The comparison of the test results of examples 1 and 5, the comparison of the test results of examples 2 and 4, and the comparison of the test results of examples 3 and 6 show that when the outer diameter is unchanged and the inner diameter is reduced, the wall thickness of the handle is increased, so that the contact area between the handle and the heating plate is increased, heat generated in the process is conducted away more quickly, the temperature of the heating plate is quickly returned to a set value, and an over-temperature alarm of the heating plate does not occur during continuous deposition, so that a large number of running sheets can be realized.
Embodiment 7 after the other end of the handle part of embodiment 1 is added with independent water cooling, heat generated in the process can be conducted away more quickly, so that the temperature of the heating plate can quickly return to a set value, over-temperature alarm of the heating plate can not occur during continuous deposition, a large amount of slide running can be realized, and the requirement of productivity can be further met.
Although the embodiments of the present invention have been described in detail hereinabove, it is apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it is to be understood that such modifications and variations fall within the scope and spirit of the present invention as set forth in the following claims. Moreover, the invention as described herein is capable of other embodiments and of being practiced or of being carried out in various ways.

Claims (1)

1. A cvd heating apparatus comprising a heating plate and a handle, wherein the handle is tubular and hollow inside, one end of the handle is fixed to the heating plate, a ratio of an outer diameter of the heating plate to an outer diameter of the handle is greater than or equal to 5.
CN202210546325.4A 2022-05-20 2022-05-20 Chemical vapor deposition heating device Active CN114635122B (en)

Priority Applications (1)

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CN114635122B true CN114635122B (en) 2022-11-18

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104862673A (en) * 2015-04-27 2015-08-26 沈阳拓荆科技有限公司 Temperature-controllable heating disc for discharging air in center
CN106571318A (en) * 2015-10-13 2017-04-19 沈阳拓荆科技有限公司 Method for positioning water cooling block of semiconductor film plating equipment
CN106571330B (en) * 2015-10-13 2019-12-06 沈阳拓荆科技有限公司 Thimble support plate adjusting tool structure and leveling method
CN106591806A (en) * 2015-10-14 2017-04-26 沈阳拓荆科技有限公司 Heating disk applied to semiconductor plasma processing device
CN210805705U (en) * 2019-07-19 2020-06-19 北京北方华创微电子装备有限公司 Process chamber and semiconductor processing equipment
CN111477569B (en) * 2020-04-10 2024-02-27 北京北方华创微电子装备有限公司 Heating device in semiconductor equipment and semiconductor equipment

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