CN111074242A - Adjusting method of heating device, heating device and chemical vapor deposition equipment - Google Patents
Adjusting method of heating device, heating device and chemical vapor deposition equipment Download PDFInfo
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- CN111074242A CN111074242A CN201811220245.XA CN201811220245A CN111074242A CN 111074242 A CN111074242 A CN 111074242A CN 201811220245 A CN201811220245 A CN 201811220245A CN 111074242 A CN111074242 A CN 111074242A
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 224
- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 165
- 239000000758 substrate Substances 0.000 claims abstract description 94
- 239000010409 thin film Substances 0.000 claims abstract description 59
- 239000010408 film Substances 0.000 claims abstract description 11
- 230000003750 conditioning effect Effects 0.000 claims 3
- 230000001105 regulatory effect Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The application relates to the technical field of integrated circuit manufacturing, in particular to a regulating method of a heating device, the heating device and chemical vapor deposition equipment. The heating device comprises a bearing part for bearing a substrate and a heater arranged on the bearing part, wherein the heater is used for heating the bearing part so as to form a film on the substrate borne by the bearing part, and comprises a plurality of heating elements, and each heating element corresponds to different areas of the bearing part; the adjusting method of the heating device comprises the following steps: acquiring an etching condition, wherein the etching condition is an etching condition when a substrate with a thin film is etched; and independently adjusting the heating power of each heating element according to the etching conditions so as to adjust the temperature of different areas of the bearing part, thereby relieving the condition that the substrate with the thin film is incompletely etched or excessively etched in the subsequent etching process.
Description
Technical Field
The application relates to the technical field of integrated circuit manufacturing, in particular to a regulating method of a heating device, the heating device and chemical vapor deposition equipment.
Background
Chemical Vapor Deposition (CVD) is a Chemical technology, which is a method of generating a thin film by Chemical reaction on the surface of a substrate using one or more gaseous compounds or simple substances containing thin film elements. Specifically, the chemical vapor deposition equipment comprises a reaction chamber and a heating device arranged in the reaction chamber, wherein the heating device is arranged on a bearing part for bearing a substrate, reaction gas is filled into the reaction chamber during work, and meanwhile, the heating device heats the bearing part and the substrate on the bearing part, so that the reaction gas is deposited on the substrate to form a film.
However, in the related art, the heating device only includes one heating element, and therefore, the heating device cannot regulate and control the temperatures of different regions of the carrying portion, and thus the thickness of the thin film at the portions of the substrate corresponding to the different regions cannot be changed, which causes the condition that the substrate formed with the thin film is etched incompletely or etched excessively in the subsequent etching process.
It is to be noted that the information disclosed in the above background section is only for enhancement of understanding of the background of the present application and therefore may include information that does not constitute prior art known to a person of ordinary skill in the art.
Disclosure of Invention
The application aims to provide a regulating method of a heating device, the heating device and chemical vapor deposition equipment, which can relieve the situation that a substrate with a thin film is incompletely etched or excessively etched in a subsequent etching process and improve the etching uniformity.
The first aspect of the present application provides a method for adjusting a heating device, where the heating device includes a carrier for carrying a substrate and a heater mounted on the carrier, the heater is configured to heat the carrier so as to form a thin film on the substrate carried on the carrier, and the heater includes a plurality of heating elements, and each of the heating elements corresponds to a different region of the carrier; wherein the adjusting method comprises the following steps:
acquiring an etching condition, wherein the etching condition is an etching condition when a substrate with a thin film is etched;
and independently adjusting the heating power of each heating element according to the etching conditions so as to adjust the temperature of different areas of the bearing part.
In an exemplary embodiment of the application, the independently adjusting the heating power of each heating element according to the etching condition to adjust the temperature of different regions of the carrier includes:
determining a magnitude relationship between etching rates corresponding to the different regions according to the etching conditions;
independently adjusting the heating power of each heating element corresponding to the different region based on a magnitude relationship between the etch rates corresponding to the different regions to adjust the temperature of the different regions.
In an exemplary embodiment of the present application, the different regions include a center region and an edge region, and the plurality of heating elements include a first heating element corresponding to the center region and a second heating element corresponding to the edge region.
In an exemplary embodiment of the present application, the independently adjusting the heating power of each of the heating elements corresponding to the different regions based on a magnitude relationship between the etching rates corresponding to the different regions to adjust the temperatures of the different regions includes:
when the etching rate corresponding to the central area is equal to the etching rate corresponding to the edge area, independently adjusting the heating power of the first heating element and the second heating element so that the temperature difference between the edge area and the central area is a first temperature difference.
In an exemplary embodiment of the present application, the first temperature difference is 0-8 ℃.
In an exemplary embodiment of the present application, the independently adjusting the heating power of each of the heating elements corresponding to the different regions based on a magnitude relationship between the etching rates corresponding to the different regions to adjust the temperatures of the different regions includes:
when the etching rate corresponding to the central area is greater than the etching rate corresponding to the edge area, independently adjusting the heating power of the first heating element and the second heating element so that the temperature difference between the central area and the edge area is a second temperature difference.
In an exemplary embodiment of the present application, the second temperature difference is 0-15 ℃.
In an exemplary embodiment of the present application, the independently adjusting the heating power of each of the heating elements corresponding to the different regions based on a magnitude relationship between the etching rates corresponding to the different regions to adjust the temperatures of the different regions includes:
when the etching rate corresponding to the central area is smaller than the etching rate corresponding to the edge area, independently adjusting the heating power of the first heating element and the second heating element so that the temperature difference between the edge area and the central area is a third temperature difference.
In an exemplary embodiment of the present application, the third temperature difference is 8 ℃ to 15 ℃.
The present application provides in a second aspect a heating device comprising:
a carrier capable of carrying a substrate;
the heater is arranged on the bearing part, can heat the bearing part so as to form a film on the substrate borne by the bearing part, and comprises a plurality of heating elements, and each heating element corresponds to different areas of the bearing part;
a regulator including an acquisition element capable of acquiring an etching condition when etching a substrate on which a thin film is formed, and an adjustment element connecting the acquisition element and each of the heating elements; the adjusting element can independently adjust the heating power of each heating element according to the etching condition so as to adjust the temperature of different areas of the bearing part.
In an exemplary embodiment of the present application, the adjustment element includes:
a determining unit connected to the obtaining element and capable of determining a magnitude relation between etching rates corresponding to the different regions according to the etching conditions;
an adjusting unit connected to the determining unit, the adjusting unit being capable of independently adjusting the heating power of each of the heating elements corresponding to the different regions based on a magnitude relationship between the etching rates corresponding to the different regions to adjust the temperatures of the different regions.
In an exemplary embodiment of the present application, the different regions include a center region and an edge region, and the plurality of heating elements include a first heating element corresponding to the center region and a second heating element corresponding to the edge region.
In an exemplary embodiment of the present application, in a projection obtained in a direction perpendicular to the carrying surface of the carrying part, a projection plane of the carrying surface may coincide with a projection plane of the substrate.
In an exemplary embodiment of the present application, the heater is embedded within the carrier.
In a third aspect, the present application provides a chemical vapor deposition apparatus comprising the heating device of any one of the above.
The technical scheme provided by the application can achieve the following beneficial effects:
according to the adjusting method of the heating device, the heating device and the chemical vapor deposition equipment, the etching condition when the substrate with the thin film is etched is obtained, and then the heating power of each heating element corresponding to different areas of the bearing part is independently adjusted according to the etching condition so as to adjust the temperature of the different areas of the bearing part, namely: the temperature of the parts of the substrate corresponding to different areas is adjusted, so that the thickness profile of the film formed on the substrate meets the etching conditions, the condition that the substrate with the film is incompletely etched or excessively etched in the subsequent etching process is relieved, and the etching uniformity is improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and together with the description, serve to explain the principles of the application. It is obvious that the drawings in the following description are only some embodiments of the application, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
FIG. 1 is a schematic view showing a structure of a heating apparatus according to the related art;
FIG. 2 is a schematic view illustrating a temperature distribution of a carrier during a heating process of a heating apparatus according to the related art;
FIG. 3 is a schematic cross-sectional structural view of a substrate after being processed by the chemical vapor deposition apparatus including the heating device of FIG. 1;
FIGS. 4 and 5 are schematic cross-sectional views of the substrate shown in FIG. 3 after being etched under different etching conditions, respectively;
FIG. 6 is a schematic structural diagram of a heating device according to an embodiment of the present application;
FIG. 7 is a block diagram of a heating device according to an embodiment of the present application;
fig. 8 to 10 are schematic diagrams illustrating temperature distribution of the carrying portion during heating of the heating device according to the embodiment;
FIGS. 11 to 13 are schematic sectional views of a substrate processed under different etching conditions by the CVD apparatus including the heating device of FIG. 6;
FIG. 14 is a schematic cross-sectional view of the substrate shown in FIG. 11, FIG. 12 or FIG. 13 after being etched under native etching conditions;
FIG. 15 is a schematic flow chart illustrating a method for adjusting a heating device according to an embodiment of the present disclosure;
fig. 16 is a flowchart illustrating step S1 in fig. 15.
Description of reference numerals:
in fig. 1 to 5:
10. a heating element; 11. a bearing part; 12. a substrate; 13. a film.
In fig. 6 to 14:
20. a first heating element; 21. a second heating element; 210. positioning a groove; 22. a bearing part; 220. a bearing surface; 23. a regulator; 230. obtaining an element; 231. an adjustment element; 2310. a determination unit; 2311. an adjustment unit; 24. a radio frequency filter; 25. an annular limiting part; 26. a substrate; 27. a film.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed description will be omitted.
Although relative terms, such as "upper" and "lower," may be used in this specification to describe one element of an icon relative to another, these terms are used in this specification for convenience only, e.g., in accordance with the orientation of the examples described in the figures. It will be appreciated that if the device of the icon were turned upside down, the element described as "upper" would become the element "lower". When a structure is "on" another structure, it may mean that the structure is integrally formed with the other structure, or that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure via another structure.
The terms "a," "an," "the," "said" are used to indicate the presence of one or more elements/components/etc.; the terms "comprising" and "having" are intended to be inclusive and mean that there may be additional elements/components/etc. other than the listed elements/components/etc.; the terms "first" and "second", etc. are used merely as labels, and are not limiting on the number of their objects.
Chemical Vapor Deposition (CVD) is a Chemical technology, which is a method of generating a thin film by Chemical reaction on the surface of a substrate using one or more gaseous compounds or simple substances containing thin film elements. Specifically, the chemical vapor deposition equipment comprises a reaction chamber and a heating device arranged in the reaction chamber, wherein the heating device is arranged on a bearing part for bearing a substrate, reaction gas is filled into the reaction chamber during work, and meanwhile, the heating device heats the bearing part and the substrate on the bearing part, so that the reaction gas is deposited on the substrate to form a film.
However, in the related art, as shown in fig. 1, the heating device includes only one heating element 10, and therefore, the heating device cannot control the temperature of different regions of the carrier 11, and thus cannot change the thickness of the thin film 13 on the substrate 12 at the portions corresponding to the different regions. In general, when the carrying part 11 is heated by using a heating device comprising only one heating element 10, the actual temperature of the edge area of the carrying part 11 is lower than that of the central area, as shown in fig. 2, the temperature of the carrying part gradually increases from the edge to the center of the carrying part 11, wherein the actual temperature of the edge area of the carrying part 11 is about 440 ℃, and the temperature of the central area of the carrying part is about 452 ℃; therefore, in the process of depositing the thin film 13, the thickness of the thin film 13 at a portion corresponding to the edge area of the substrate is smaller than the thickness of the thin film 13 at a portion corresponding to the center area of the substrate, as shown in fig. 3. This results in a substrate formed with the thin film 13 being susceptible to underetching (as shown in fig. 4 and 5) or overetching in a subsequent etching process.
In order to solve the above technical problem, in an embodiment of the present application, a heating device is provided, which can be applied to a chemical vapor deposition apparatus. As shown in fig. 6, the heating device includes a carrying portion 22, a heater and a regulator 23, wherein:
the carrier 22 can be made of a material with good thermal conductivity, and the carrier 22 can carry the substrate 26, that is, when the substrate 26 is subjected to the chemical vapor deposition process, the substrate 26 can be placed on the carrying surface 220 of the carrier 22, and the substrate 26 can be a wafer.
For example, the size and shape of the carrying surface 220 of the carrying part 22 can be adapted to the size and shape of the substrate 26, that is: in the projection obtained in the direction perpendicular to the bearing surface 220 of the bearing part 22, the projection plane of the bearing surface 220 can coincide with the projection plane of the substrate 26, so that the positioning difficulty of the substrate 26 and the bearing part 22 can be reduced, the positioning accuracy of the substrate 26 and the bearing part 22 is improved, and the heated temperature of each area on the substrate 26 is ensured to meet the requirement.
In addition, the outer edge of the carrying surface 220 may further be provided with an annular limiting portion 25, and the substrate 26 may be disposed in the annular limiting portion 25. In this embodiment, the positioning difficulty between the substrate 26 and the carrying portion 22 can be further reduced by providing the annular limiting portion 25, and the positioning accuracy between the substrate 26 and the carrying portion 22 is improved, so that the heated temperature of each region on the substrate 26 meets the requirement.
The heater is mounted on the carrier 22, and the heater can heat the carrier 22, so as to heat the substrate 26 carried on the carrier 22, so as to form a thin film 27 on the substrate 26, where the thin film 27 can be silicon dioxide (SiO2), silicon oxynitride (SiON), amorphous silicon (α -Si), or silicon nitride (SiN), and the heater can include a plurality of heating elements, each of which can correspond to a different region of the carrier 22, and each of the heating elements can independently control the temperature of the corresponding region of the carrier 22.
For example, the heater can be embedded in the carrying portion 22 to reduce heat loss and improve heat conduction efficiency. It should be noted that the heating element may be a resistance wire or a resistance strip.
As shown in fig. 7, the regulator 23 may include an acquisition element 230 and an adjustment element 231. This acquisition element 230 is capable of acquiring an etching condition at the time of etching the substrate 26 on which the thin film 27 is formed; the adjusting element 231 is connected to the acquiring element 230 and each heating element, and the adjusting element 231 can independently adjust the heating power of each heating element according to the etching conditions acquired by the acquiring element 230, so as to adjust the temperature of different areas of the supporting part 22.
In the present embodiment, the etching conditions at the time of etching the substrate 26 on which the thin film 27 is formed are acquired by the regulator 23, and then the heating powers of the respective heating elements corresponding to the different regions of the carrier part 22 are independently adjusted according to the etching conditions to adjust the temperatures of the different regions of the carrier part 22, that is: the temperature of the substrate 26 at the positions corresponding to the different regions is adjusted, so that the thickness profile of the thin film 27 formed on the substrate 26 meets the etching conditions, thereby alleviating the situation that the substrate 26 with the thin film 27 is incompletely etched or excessively etched in the subsequent etching process, and improving the etching uniformity.
For example, as shown in fig. 7, the aforementioned adjusting element 231 includes a determining unit 2310 and an adjusting unit 2311. This determining unit 2310 is connected with the obtaining element 230, and the determining unit 2310 is capable of determining a magnitude relationship between etching rates corresponding to different regions of the carrier 22 according to the etching conditions; the adjusting unit 2311 is connected to the determining unit 2310, and the adjusting unit 2311 can independently adjust the heating power of each heating element corresponding to different regions based on the magnitude relationship between the etching rates corresponding to the different regions to adjust the temperatures of the different regions.
In this embodiment, the temperatures of the different regions are adjusted by the etching rates corresponding to the different regions of the carrier 22, so that the thicknesses of the thin films 27 corresponding to the different regions conform to the etching rates during the deposition of the thin films 27, thereby alleviating the occurrence of incomplete etching or over etching of the substrate 26 on which the thin films 27 are formed in the subsequent etching process, and improving the etching uniformity.
For example, the aforementioned different regions of the carrier 22 may include a center region and an edge region, but are not limited to these two. The plurality of heating elements may include a first heating element 20 and a second heating element 21, the first heating element 20 corresponds to the central region of the supporting portion 22 for heating the central region of the supporting portion 22; this second heating element 21 corresponds to an edge region of the carrier part 22 for heating the edge region of the carrier part 22.
Based on this, the aforementioned determination unit 2310 may be specifically configured to determine a magnitude relationship between an etching rate corresponding to the center region and an etching rate corresponding to the edge region according to the etching conditions; the adjusting unit 2311 may be specifically configured to independently adjust the heating powers of the first heating element 20 and the second heating element 21 based on a magnitude relationship between an etching rate corresponding to the central region and an etching rate corresponding to the edge region, so as to adjust the temperatures of the central region and the edge region, so that the thickness of the thin film 27 corresponding to the central region and the thickness of the thin film 27 corresponding to the edge region respectively conform to the etching rates corresponding thereto, thereby alleviating the occurrence of incomplete etching or over etching in the subsequent etching process of the substrate 26 on which the thin film 27 is formed, and improving the etching uniformity.
In one embodiment, the adjusting unit 2311 is capable of independently adjusting the heating powers of the first heating element 20 and the second heating element 21 when the etching rate corresponding to the central region of the carrier 22 is equal to the etching rate corresponding to the edge region of the carrier 22, so that the heating power of the second heating element 21 is greater than or equal to the heating power of the first heating element 20, and thus the temperature difference between the edge region and the central region of the carrier 22 is a first temperature difference, where the first temperature difference may be 0-8 ℃, as shown in fig. 8, the actual temperature of the edge region of the carrier 22 is about 446 ℃, and the temperature of the central region of the carrier 22 is about 440 ℃; this makes it possible to make the thickness of the thin film 27 on the substrate 26 corresponding to the edge region equal to the thickness of the thin film 27 on the substrate 26 corresponding to the central region, as shown in fig. 11, to alleviate the occurrence of incomplete etching or over-etching in the subsequent etching process when the etching rate corresponding to the central region of the carrier part 22 is equal to the etching rate corresponding to the edge region of the carrier part 22, and to improve the etching uniformity, as shown in fig. 14.
When the size and shape of the carrying surface 220 of the carrier 22 can be matched with the size and shape of the substrate 26, since the heat dissipation speed of the edge region of the carrier 22 is faster than that of the central region of the carrier 22, when the etching rate corresponding to the central region of the carrier 22 is equal to that of the edge region of the carrier 22, if the temperature actually applied to the edge region of the substrate 26 during the deposition of the thin film 27 is equal to that of the central region of the substrate 26, and thus the thickness of the thin film 27 corresponding to the edge region on the substrate 26 is equal to that of the thin film 27 corresponding to the central region on the substrate 26, it is necessary to compensate the temperature of the edge region of the carrier 22 to a certain extent, that is: the adjusting unit 2311 may adjust the heating power of the first heating element 20 to be greater than the heating power of the second heating element 21 to ensure that the temperature of the edge region of the carrier 22 is greater than the temperature of the central region of the carrier 22; the temperature of the edge region of the carrier part 22 exceeding the temperature of the central region of the carrier part 22 is a compensation temperature, which is not actually applied to the substrate 26, but is dissipated in the environment.
In another embodiment, the adjusting unit 2311 is capable of independently adjusting the heating powers of the first heating element 20 and the second heating element 21 when the etching rate corresponding to the central region of the carrier 22 is greater than the etching rate corresponding to the edge region of the carrier 22, so that the heating power of the second heating element 21 is less than or equal to the heating power of the first heating element 20, and thus the temperature difference between the central region and the edge region of the carrier 22 may be a second temperature difference, where the second temperature difference may be 0-15 ℃, as shown in fig. 9, the temperature of the carrier 22 gradually increases from the edge to the center of the carrier 22, the actual temperature of the edge region of the carrier 22 is about 442 ℃, and the temperature of the central region of the carrier 22 is about 452 ℃; this makes the thickness of the thin film 27 on the substrate 26 corresponding to the edge region smaller than the thickness of the thin film 27 on the substrate 26 corresponding to the central region, as shown in fig. 12, to alleviate the occurrence of incomplete etching or over-etching when the etching rate corresponding to the central region of the carrier part 22 is greater than the etching rate corresponding to the edge region of the carrier part 22 in the subsequent etching process, and to improve the etching uniformity, as shown in fig. 14.
In yet another embodiment, the adjusting unit 2311 is capable of independently adjusting the heating powers of the first heating element 20 and the second heating element 21 when the etching rate corresponding to the central region of the supporting portion 22 is less than the etching rate corresponding to the edge region of the supporting portion 22, so that the heating power of the second heating element 21 is greater than or equal to the heating power of the first heating element 20, so that the temperature difference between the edge region and the central region of the supporting portion 22 is a third temperature difference, where the third temperature difference may be 8 ℃ to 15 ℃, as shown in fig. 10, the temperature of the supporting portion 22 gradually decreases from the edge to the center of the supporting portion 22, the actual temperature of the edge region of the supporting portion 22 is about 452 ℃, and the temperature of the central region of the supporting portion 22 is about 442 ℃; this makes the thickness of the thin film 27 on the substrate 26 corresponding to the edge region larger than the thickness of the thin film 27 on the substrate 26 corresponding to the central region, as shown in fig. 13, to alleviate the occurrence of incomplete etching or over-etching when the etching rate corresponding to the central region of the carrier part 22 is smaller than the etching rate corresponding to the edge region of the carrier part 22 in the subsequent etching process, and improve the etching uniformity, as shown in fig. 14.
It should be noted that, since the size and shape of the carrying surface 220 of the carrying part 22 can be adapted to the size and shape of the substrate 26, the central region and the edge region of the carrying part 22 mentioned in the above embodiments are adapted to the central region and the edge region of the substrate 26, respectively, that is, the etching rate corresponding to the central region of the carrying part 22 mentioned in the present embodiment can be understood as the etching rate corresponding to the central region of the substrate 26 formed with the thin film 27, and the etching rate corresponding to the edge region of the carrying part 22 can be understood as the etching rate corresponding to the edge region of the substrate 26 formed with the thin film 27.
In this embodiment, the heating temperature of each heating element in the heater may range from 200 ℃ to 600 ℃, for example: 200 ℃, 300 ℃, 400 ℃, 500 ℃, 600 ℃, but is not limited thereto, as the case may be.
For example, as shown in fig. 6, the aforementioned second heating element 21 may be provided with a positioning groove 210, and the first heating element 20 may be installed in the positioning groove 210, so that the installation efficiency of the first heating element 20 and the second heating element 21 may be improved, and the structure of the heater may be simplified. It should be understood that the second heating element 21 except for the location groove 210 corresponds to an edge region of the carrier 22 for heating the edge region of the carrier 22, and the first heating element 20 installed in the location groove 210 corresponds to a center region of the carrier 22 for heating the center region of the carrier 22.
In order to alleviate the mutual influence of the first heating element 20 and the second heating element 21 during the operation process, which causes the temperature deviation of the central area and the edge area of the bearing part 22, in the present embodiment, a heat insulation film may be disposed between the first heating element 20 and the second heating element 21.
In addition, as shown in fig. 6, the heating device may further include a plurality of rf filters 24, and each rf filter 24 may be connected in series with each heating element, respectively.
The embodiment of the present application further provides a method for adjusting a heating device, where the heating device may be the heating device mentioned in any of the foregoing embodiments, and as shown in fig. 15, the method for adjusting a heating device may include:
step S1 of acquiring etching conditions at the time of etching the substrate 26 on which the thin film 27 is formed;
in step S2, the heating power of each heating element is independently adjusted according to the etching conditions to adjust the temperature of different regions of the carrier part 22.
In the present embodiment, by obtaining the etching conditions when etching the substrate 26 on which the thin film 27 is formed, and then independently adjusting the heating power of each heating element corresponding to different regions of the carrier part 22 according to the etching conditions, the temperatures of the different regions of the carrier part 22 are adjusted, that is: the temperature of the substrate 26 at the positions corresponding to the different regions is adjusted, so that the thickness profile of the thin film 27 formed on the substrate 26 meets the etching conditions, thereby alleviating the situation that the substrate 26 with the thin film 27 is incompletely etched or excessively etched in the subsequent etching process, and improving the etching uniformity.
As shown in fig. 16, independently adjusting the heating power of each heating element according to the etching condition to adjust the temperature of different regions of the carrier part 22 may include:
step S10, determining the magnitude relation between the etching rates corresponding to different areas according to the etching conditions;
in step S12, the heating power of each heating element corresponding to the different regions is independently adjusted based on the magnitude relationship between the etching rates corresponding to the different regions to adjust the temperatures of the different regions.
In this embodiment, the temperatures of the different regions are adjusted by the etching rates corresponding to the different regions of the carrier 22, so that the thicknesses of the thin films 27 corresponding to the different regions conform to the etching rates during the deposition of the thin films 27, thereby alleviating the occurrence of incomplete etching or over etching of the substrate 26 on which the thin films 27 are formed in the subsequent etching process, and improving the etching uniformity.
For example, the aforementioned different regions of the carrier part 22 may comprise a central region and an edge region, and the plurality of heating elements comprises a first heating element 20 corresponding to the central region and a second heating element 21 corresponding to the edge region.
Based on this, the aforementioned step S10 may specifically be to determine a magnitude relationship between the etching rate corresponding to the central region and the etching rate corresponding to the edge region according to the etching conditions; step S12 may be specifically implemented by independently adjusting the heating powers of the first heating element 20 and the second heating element 21 based on the magnitude relationship between the etching rate corresponding to the central region and the etching rate corresponding to the edge region, so as to adjust the temperatures of the central region and the edge region, so that the thickness of the thin film 27 corresponding to the central region and the thickness of the thin film 27 corresponding to the edge region respectively conform to the etching rates corresponding thereto, thereby alleviating the occurrence of incomplete etching or over etching in the subsequent etching process of the substrate 26 on which the thin film 27 is formed, and improving the etching uniformity.
In one embodiment, step S12 may include: when the etching rate corresponding to the central region is equal to the etching rate corresponding to the edge region, the heating powers of the first heating element 20 and the second heating element 21 are independently adjusted to make the temperature difference between the edge region and the central region be a first temperature difference, wherein the first temperature difference may be 0-8 ℃, so that the thickness of the thin film 27 corresponding to the edge region on the substrate 26 is equal to the thickness of the thin film 27 corresponding to the central region on the substrate 26, as shown in fig. 11, to alleviate the occurrence of incomplete etching or over etching in the subsequent etching process when the etching rate corresponding to the central region of the carrier 22 is equal to the etching rate corresponding to the edge region of the carrier 22, thereby improving the etching uniformity.
In another embodiment, step S12 may include: when the etching rate corresponding to the central region is greater than the etching rate corresponding to the edge region, the heating powers of the first heating element 20 and the second heating element 21 are independently adjusted to make the temperature difference between the central region and the edge region be a second temperature difference, wherein the second temperature difference may be 0-15 ℃, so that the thickness of the thin film 27 corresponding to the edge region on the substrate 26 is smaller than the thickness of the thin film 27 corresponding to the central region on the substrate 26, as shown in fig. 12, to alleviate the situation that the etching is incomplete or over-etched when the etching rate corresponding to the central region of the carrier 22 is greater than the etching rate corresponding to the edge region of the carrier 22 in the subsequent etching process, and improve the etching uniformity.
In still another embodiment, step S12 may include: when the etching rate corresponding to the central region is smaller than that corresponding to the edge region, the heating powers of the first heating element 20 and the second heating element 21 are independently adjusted to make the temperature difference between the edge region and the central region be a third temperature difference, wherein the third temperature difference is 8-15 ℃, so that the thickness of the thin film 27 corresponding to the edge region on the substrate 26 is larger than that of the thin film 27 corresponding to the central region on the substrate 26, as shown in fig. 13, to alleviate the situation that incomplete etching or over etching occurs when the etching rate corresponding to the central region of the bearing part 22 is smaller than that corresponding to the edge region of the bearing part 22 in the subsequent etching process, thereby improving the etching uniformity.
The embodiment of the application also provides chemical vapor deposition equipment which comprises the heating device in any one of the above-mentioned modes.
Other embodiments of the present application will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.
Claims (15)
1. The adjusting method of the heating device is characterized in that the heating device comprises a bearing part for bearing a substrate and a heater arranged on the bearing part, the heater is used for heating the bearing part so as to form a film on the substrate borne by the bearing part, and the heater comprises a plurality of heating elements, and each heating element corresponds to different areas of the bearing part; wherein the adjusting method comprises the following steps:
acquiring an etching condition, wherein the etching condition is an etching condition when a substrate with a thin film is etched;
and independently adjusting the heating power of each heating element according to the etching conditions so as to adjust the temperature of different areas of the bearing part.
2. The adjustment method according to claim 1,
the independently adjusting the heating power of each heating element according to the etching condition to adjust the temperature of different areas of the bearing part comprises:
determining a magnitude relationship between etching rates corresponding to the different regions according to the etching conditions;
independently adjusting the heating power of each heating element corresponding to the different region based on a magnitude relationship between the etch rates corresponding to the different regions to adjust the temperature of the different regions.
3. The adjustment method according to claim 2,
the different zones include a center zone and an edge zone, and the plurality of heating elements include a first heating element corresponding to the center zone and a second heating element corresponding to the edge zone.
4. The conditioning method of claim 3, wherein the independently adjusting the heating power of each of the heating elements corresponding to the different regions to adjust the temperature of the different regions based on a magnitude relationship between the etch rates corresponding to the different regions comprises:
when the etching rate corresponding to the central area is equal to the etching rate corresponding to the edge area, independently adjusting the heating power of the first heating element and the second heating element so that the temperature difference between the edge area and the central area is a first temperature difference.
5. The adjustment method according to claim 4,
the first temperature difference is 0-8 ℃.
6. The conditioning method of claim 3, wherein the independently adjusting the heating power of each of the heating elements corresponding to the different regions to adjust the temperature of the different regions based on a magnitude relationship between the etch rates corresponding to the different regions comprises:
when the etching rate corresponding to the central area is greater than the etching rate corresponding to the edge area, independently adjusting the heating power of the first heating element and the second heating element so that the temperature difference between the central area and the edge area is a second temperature difference.
7. The adjustment method according to claim 6,
the second temperature difference is 0-15 ℃.
8. The conditioning method of claim 3, wherein the independently adjusting the heating power of each of the heating elements corresponding to the different regions to adjust the temperature of the different regions based on a magnitude relationship between the etch rates corresponding to the different regions comprises:
when the etching rate corresponding to the central area is smaller than the etching rate corresponding to the edge area, independently adjusting the heating power of the first heating element and the second heating element so that the temperature difference between the edge area and the central area is a third temperature difference.
9. The adjustment method according to claim 8,
the third temperature difference is 8-15 ℃.
10. A heating device, comprising:
a carrier capable of carrying a substrate;
the heater is arranged on the bearing part, can heat the bearing part so as to form a film on the substrate borne by the bearing part, and comprises a plurality of heating elements, and each heating element corresponds to different areas of the bearing part;
a regulator including an acquisition element capable of acquiring an etching condition when etching a substrate on which a thin film is formed, and an adjustment element connecting the acquisition element and each of the heating elements; the adjusting element can independently adjust the heating power of each heating element according to the etching condition so as to adjust the temperature of different areas of the bearing part.
11. The heating device of claim 10, wherein the adjustment element comprises:
a determining unit connected to the obtaining element and capable of determining a magnitude relation between etching rates corresponding to the different regions according to the etching conditions;
an adjusting unit connected to the determining unit, the adjusting unit being capable of independently adjusting the heating power of each of the heating elements corresponding to the different regions based on a magnitude relationship between the etching rates corresponding to the different regions to adjust the temperatures of the different regions.
12. The heating device according to claim 11,
the different zones include a center zone and an edge zone, and the plurality of heating elements include a first heating element corresponding to the center zone and a second heating element corresponding to the edge zone.
13. The heating device according to claim 10,
in a projection obtained in a direction perpendicular to the carrying surface of the carrying part, a projection surface of the carrying surface can coincide with a projection surface of the substrate.
14. The heating device according to claim 10,
the heater is embedded in the bearing part.
15. A chemical vapor deposition apparatus comprising the heating device of any one of claims 10 to 14.
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| CN201811220245.XA CN111074242A (en) | 2018-10-19 | 2018-10-19 | Adjusting method of heating device, heating device and chemical vapor deposition equipment |
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| CN201811220245.XA CN111074242A (en) | 2018-10-19 | 2018-10-19 | Adjusting method of heating device, heating device and chemical vapor deposition equipment |
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| CN113201727A (en) * | 2021-04-28 | 2021-08-03 | 錼创显示科技股份有限公司 | Semiconductor wafer bearing structure and organic metal chemical vapor deposition device |
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Application publication date: 20200428 |