CN105448768A - Semiconductor processing equipment - Google Patents
Semiconductor processing equipment Download PDFInfo
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- CN105448768A CN105448768A CN201410277390.7A CN201410277390A CN105448768A CN 105448768 A CN105448768 A CN 105448768A CN 201410277390 A CN201410277390 A CN 201410277390A CN 105448768 A CN105448768 A CN 105448768A
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Abstract
The invention provides semiconductor processing equipment, and the equipment comprises a reaction cavity and a heating device disposed in the reaction cavity. The heating device comprises heating lamp groups, a quartz cover located above the heating lamp groups, at least one thermal isolation part, and a control unit, wherein the number of the heating lamp groups is at least two, and are arranged to be corresponding to different regions a processed workpiece at intervals. The thermal isolation parts are used for isolating the heat generated by the heating lamp groups mutually. The control unit is used for adjusting power applied to all heating lamp groups during processing according to the distribution of pre-obtained film resistance values in different regions of the processed workpiece and the corresponding relation between the temperature of different regions of the processed workpiece and the film resistance values, thereby adjusting the distribution of the film resistance values of different regions of the processed workpiece. The equipment provided by the invention can improve the uniformity of the film resistances under the condition that the film thickness uniformity is not affected.
Description
Technical field
The present invention relates to semiconductor processing technology field, particularly, relate to a kind of semiconductor processing equipment.
Background technology
Physical vapour deposition (PVD) (PhysicalVaporDeposition, PVD) technology is a most popular class film fabrication techniques in semi-conductor industry.Physical gas phase deposition technology can be applied in a lot of technology field, as silicon perforation (ThroughSiliconVia, TSV) in copper interconnecting line technology, encapsulation field etc.
Along with semiconductor technology development, the size of integrated circuit is more and more less, and Low-k (low-k) material appears in interconnection process as inter-level dielectric.In the technique of etching Low-k material, in order to protect Low-k material, to obtain better etch topography, usually at Low-k deposited on materials metal compound film (such as TiAlN thin film), as the metal hard mask of etching Low-k material.At present, the depositing operation of metal compound film has become an indispensable technological process in the copper wiring technique of below 32nm node.
The depositing operation of metal compound film needs the parameter paid close attention to mainly contain: the thickness evenness of film, homogeneity of electrical resistance and stress.Wherein, different from plated metal (non-compound), when depositing metallic compounds, the thickness of film and the product of resistance value are not a constant, in other words, even if the thickness of film regional is identical, resistance value also may not be identical, this is because the deposition of metal is direct sputtering (only passing into the sputter gas such as Ar in PVD chamber), the deposition of TiAlN thin film is then that reactive sputtering (except passing into except the sputter gas such as Ar in PVD chamber, also passes into O simultaneously
2or N
2deng reacting gas), in reactive sputtering process, the component ratio of Ti and N is uneven in the distribution of substrate surface regional, and the resistance value tool of the component ratio of Ti and N to film has a certain impact, thus cause homogeneity of electrical resistance lower, and then bring harmful effect to the uniformity of postchannel process (as wet-cleaned (wetclean), CMP grinding).As depicted in figs. 1 and 2, for film resistance value respectively with the graph of a relation of wet-cleaned speed and CMP grinding rate.Wherein, abscissa represents 13 sampling points at substrate Shang Zi center to edge; In Fig. 1, left ordinate scale represents resistance value (Rs), and right ordinate scale represents wet-cleaned speed (WER); In Fig. 2, ordinate represents CMP grinding rate.As shown in Figure 1, if the resistance value of 13 sampling points there are differences, then wet-cleaned speed also changes thereupon, thus shows that homogeneity of electrical resistance has a certain impact to wet-cleaned uniformity tool.As shown in Figure 2, when when homogeneity of electrical resistance is 2.4%, CMP grinding rate obvious ratio resistance value uniformity is 3%, CMP grinding rate is even, thus shows that homogeneity of electrical resistance is less, then CMP grinding rate is more even.
Fig. 3 is existing a kind of PVD equipment.As shown in Figure 3, PVD equipment comprises reaction chamber 100, and the top of reaction chamber 100 is provided with target 102, and target 102 is electrically connected with DC power supply or radio-frequency power supply (not shown); Further, in reaction chamber 100, and the below being positioned at target 102 is provided with pedestal 101, in order to carry workpiece to be machined 103, and heating workpiece to be machined 103, reach temperature needed for technique to make it.And be also provided with exhaust outlet 104 in the bottom of reaction chamber 100, gas extraction system (not shown) vacuumizes via exhaust outlet 104 pairs of reaction chambers 100.Such as, in the process of depositing TiN thin film, in reaction chamber 100, pass into Ar and N simultaneously
2, and open radio-frequency power supply, now being reacted by N and the Ti of ionization target forms TiN, is then sputtered out and is deposited on the surface of workpiece to be machined 103, thus obtaining TiAlN thin film.
In order to improve the homogeneity of electrical resistance of metal compound film, usually adopt the mode of vertical spacing (spacing), chamber pressure and Baking (baking) etc. between adjusting base 101 and target 102.But, because the vertical spacing between pedestal 101 and target 102 all has impact to the homogeneity of electrical resistance of film and thickness evenness respectively, that is, this vertical spacing has corresponding relation with the homogeneity of electrical resistance of film and thickness evenness respectively, that is: this vertical spacing is larger, homogeneity of electrical resistance is better, and thickness evenness is then poorer; Contrary, this vertical spacing is less, and homogeneity of electrical resistance is poorer, and thickness evenness is then better.
Summary of the invention
The present invention is intended at least to solve one of technical problem existed in prior art, proposes a kind of semiconductor processing equipment, and it under the prerequisite not affecting film gauge uniformity, can improve sheet resistance uniformity, thus can improve the uniformity of postchannel process.
A kind of semiconductor processing equipment is provided for realizing object of the present invention, the heater comprising reaction chamber and be provided at its inner portion, described heater comprises heating lamp group and is positioned at the quartz cover above described heating lamp group, and described quartz cover is for carrying workpiece to be machined; Described heating lamp group is used for carrying out radiation heating through described quartz cover to described workpiece to be machined, and the quantity of described heating lamp group is at least two groups, and the zones of different corresponding to described workpiece to be machined is intervally arranged; And described heater also comprises at least one heat insulating member, mutually isolated in order to the heat making each group of heating lamp group produce; Described heater also comprises control unit, described control unit is used for when carrying out technique, according to the distribution of the sheet resistance of the described workpiece to be machined zones of different obtained in advance and the temperature of workpiece to be machined zones of different and the corresponding relation of sheet resistance, regulate the power be applied in each group of heating lamp group, thus regulate the film resistor Distribution value of described workpiece to be machined zones of different.
Preferably, the acquisition pattern of the film resistor Distribution value of described workpiece to be machined zones of different is: carry out one-time process, and in technical process, utilize described control unit to regulate the power be applied in each group of heating lamp group, to make the temperature of workpiece to be machined zones of different identical; After this process is completed, by detecting the distribution of the sheet resistance obtaining this workpiece to be machined zones of different.
Preferably, often organize heating lamp group and adopt loop configuration, and described at least two group heating lamp groups are looped around the position corresponding with the circumference place of described workpiece to be machined different radii respectively.
Preferably, described heat insulating member is heat insulation loop, and described heat insulation loop is looped around between two groups of adjacent heating lamp groups, in order to make the two mutually isolated.
Preferably, often organize heating lamp group and comprise multiple bulb, and arrange along the circumferential interval of described workpiece to be machined.
Preferably, often organize heating lamp group comprise one or more along described workpiece to be machined circumferential hoop around annular lamp tube, and described many annular lamp tubes are mutually nested.
Preferably, described at least two group heating lamp groups are intervally arranged along the circumference of described workpiece to be machined.
Preferably, described heat insulating member is thermal insulation board, and described thermal insulation board is arranged along the radial direction of described workpiece to be machined, and between adjacent two groups of heating lamps, in order to make the two mutually isolated.
Preferably, often organize heating lamp group and comprise at least one bulb or fluorescent tube.
Preferably, described semiconductor processing equipment is Pvd equipment, and for carrying out the depositing operation of TiAlN thin film to workpiece to be machined.
The present invention has following beneficial effect:
Semiconductor processing equipment provided by the invention, its heater is intervally arranged corresponding to the zones of different of workpiece to be machined by making at least one group of heating lamp group, and make the heat of each group of heating lamp group generation mutually isolated by heat insulating member, can realize carrying out partition heating to workpiece to be machined.And, by control unit when carrying out technique, according to the distribution of the sheet resistance of the workpiece to be machined zones of different obtained in advance and the temperature of workpiece to be machined zones of different and the corresponding relation of sheet resistance, realize on-line control in technical process and be applied to the power in each group of heating lamp group, and then the film resistor Distribution value of workpiece to be machined zones of different can be regulated, thus sheet resistance uniformity can be improved, and then the uniformity of postchannel process can be improved.In addition, because the temperature of workpiece to be machined only and between sheet resistance has corresponding relation, the adjustment process thus based on this corresponding relation can not affect film thickness, thus can ensure that film gauge uniformity is unaffected.
Accompanying drawing explanation
Fig. 1 is the resistance value of film and the graph of a relation of wet-cleaned speed;
Fig. 2 is the resistance value of film and the graph of a relation of CMP grinding rate;
Fig. 3 is existing a kind of PVD equipment;
The cutaway view of the semiconductor processing equipment that Fig. 4 provides for first embodiment of the invention;
The cutaway view of the heater of the semiconductor processing equipment that Fig. 5 A provides for first embodiment of the invention;
Fig. 5 B is the cutaway view along A-A line in Fig. 5 A;
Fig. 5 C is the corresponding relation figure of sheet resistance and temperature;
Fig. 5 D is that heater arranges the distribution map of the sheet resistance of lower acquisition two kinds of temperature;
The vertical view of the heater of the semiconductor processing equipment that the modification that Fig. 5 E is first embodiment of the invention provides;
The vertical view of a kind of heater of the semiconductor processing equipment that Fig. 6 A provides for second embodiment of the invention; And
The vertical view of the another kind of heater of the semiconductor processing equipment that Fig. 6 B provides for second embodiment of the invention.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, semiconductor processing equipment provided by the invention is described in detail.
First embodiment
The cutaway view of the semiconductor processing equipment that Fig. 4 provides for first embodiment of the invention.Refer to Fig. 4, the semiconductor processing equipment that the embodiment of the present invention provides, it is Pvd equipment, the heater 201 specifically comprising reaction chamber 200 and be provided at its inner portion.Wherein, the top of reaction chamber 200 is provided with target 202, target 202 is electrically connected with DC power supply or radio-frequency power supply (not shown).Preferably, above-mentioned Pvd equipment can be applicable to depositing operation workpiece to be machined being carried out to TiAlN thin film, and now target 202 is Ti target, particularly, in reaction chamber 200, passes into Ar and N simultaneously
2, and power-on, now reacted by N and the Ti of ionization target and form TiN, be then sputtered out and be deposited on the workpiece to be machined surface be placed on heater 201, thus obtaining TiAlN thin film.
Below heater 201 is described in detail.Particularly, the cutaway view of heater that provides for first embodiment of the invention of Fig. 5 A.Fig. 5 B is the cutaway view along A-A line in Fig. 5 A.Seeing also Fig. 5 A and Fig. 5 B, heater 201 comprises heating lamp group, being positioned at quartz cover 2, at least one heat insulating member and the lifting pedestal 1 for carrying heating lamp group, quartz cover 2 and heat insulating member above this heating lamp group.Wherein, quartz cover 2 is for carrying workpiece to be machined 3; Heating lamp group is used for carrying out radiation heating through quartz cover 2 pairs of workpieces to be machined 3; The quantity of heating lamp group is at least two groups, and the zones of different corresponding to workpiece to be machined 3 is intervally arranged; Heat insulating member is for making the heat of each group of heating lamp group generation mutually isolated.
In the present embodiment, as shown in Figure 5 B, the quantity of heating lamp group is two groups, that is, two groups of heating lamp groups (41,42), and often organize heating lamp group employing loop configuration, this annular-heating lamp group arranges multiple bulb by the circumferential interval along workpiece to be machined 3 and forms; Further, two groups of heating lamp groups (41,42) are looped around the position corresponding with the circumference place of workpiece to be machined 3 different radii respectively, and wherein, heating lamp group 41 corresponds to the fringe region of workpiece to be machined 3; Heating lamp group 42 corresponds to the central area of workpiece to be machined 3.In addition, heat insulating member is heat insulation loop 51, and this heat insulation loop 51 is looped around between two groups of heating lamp groups (41,42), in order to make the two mutually isolated.So-called mutually isolated, refer to that two adjacent groups heating lamp group is when carrying out radiation heating to certain region of workpiece to be machined 3 corresponding separately respectively, the two heat given off can not influence each other because being subject to blocking of heat insulating member, namely, utilize heat insulation loop 51, can make often to organize other regions that heat that heating lamp group gives off can not be irradiated to workpiece to be machined, thus can realize often organizing the temperature that heating lamp group can regulate separately certain region of workpiece to be machined 3 corresponding with it.
Because the temperature of workpiece to be machined only and between sheet resistance has corresponding relation, as shown in Figure 5 C, be the corresponding relation figure of sheet resistance and temperature.Abscissa represents the temperature of workpiece to be machined; Ordinate represents sheet resistance (Rs).As seen from the figure, the temperature of workpiece to be machined is higher, and sheet resistance is less; Otherwise the temperature of workpiece to be machined is lower, and sheet resistance is larger.
Based on above-mentioned principle, in the present embodiment, heater 201 also comprises control unit (not shown), this control unit is used for when carrying out technique, according to the distribution of the sheet resistance of the workpiece to be machined zones of different obtained in advance and the temperature of workpiece to be machined zones of different and the corresponding relation of sheet resistance, regulate the power be applied in each group of heating lamp group, thus regulate the film resistor Distribution value of workpiece to be machined zones of different, and then can sheet resistance uniformity be improved, improve the uniformity of postchannel process.And, because the temperature of workpiece to be machined only and between sheet resistance has corresponding relation, thus can not affect film thickness in the process of sheet resistance regulating workpiece to be machined zones of different, thus can ensure that film gauge uniformity is unaffected.
The heater that Fig. 5 D provides for the present embodiment arranges the distribution map of the sheet resistance of lower acquisition two kinds of temperature.As shown in Figure 5 D, abscissa represents the radial position of workpiece to be machined, and wherein, the abscissa at workpiece to be machined center is 0, and the abscissa at workpiece to be machined edge is respectively-147 and+147; Ordinate represents sheet resistance.Arranging 1 for the power output of heating lamp group 42 accounts for 30%, and the power output of heating lamp group 41 accounts for 70%; Arranging 1 for the power output of heating lamp group 42 accounts for 70%, and the power output of heating lamp group 41 accounts for 30%.As seen from the figure, arranging by carrying out two kinds of diverse temperature, antipodal two sheet resistance curves can be obtained.In actual applications, if the sheet resistance of the central area of workpiece to be machined and fringe region there are differences, such as, if the sheet resistance of central area is higher than the sheet resistance of fringe region, then control unit can carry out in the process of technique at semiconductor equipment, 2 adjustments are set are applied to power in each group of heating lamp group with reference to above-mentioned, namely, by reducing the temperature being applied to the power reduction workpiece to be machined central area of the heating lamp group of central area, improve the temperature of fringe region by increasing the power being applied to the heating lamp group of fringe region simultaneously; If the sheet resistance of central area is lower than the sheet resistance of fringe region, then control unit can carry out in the process of technique at semiconductor equipment, 1 adjustment is set is applied to power in each group of heating lamp group with reference to above-mentioned, namely, improve the temperature of workpiece to be machined central area, reduce the temperature of fringe region simultaneously.
Preferably, the distribution of the sheet resistance of workpiece to be machined zones of different can obtain in the following ways: first carry out one-time process, and in technical process, utilize control unit to regulate the power be applied in each group of heating lamp group, to make the temperature of workpiece to be machined zones of different identical; After this process is completed, a workpiece to be machined sample is obtained; Then, by detecting the distribution of the sheet resistance obtaining this workpiece to be machined sample zones of different.Easy understand, this technique is the pre-technique of carrying out before carrying out normal technique, can obtain the distribution of the sheet resistance of workpiece to be machined zones of different in advance.Certainly, in actual applications, the additive method of such as empirical method etc. can also be adopted to obtain the distribution of the sheet resistance of workpiece to be machined zones of different in advance.
In the present embodiment, promoting base 1 except there is the effect of carrying heating lamp group and quartz cover 2, quartz cover 2 can also being made to rise to process station or drop to loading position by making lifting rectilinear motion.So-called process station, refers to that when carrying out technique to workpiece to be machined 3, the upper surface position of quartz cover 2, workpiece to be machined 3 is placed on the upper surface of quartz cover 2.So-called loading position, refers to that the transmitting devices such as manipulator are when quartz cover 2 takes out workpiece to be machined 3, the upper surface position of quartz cover 2.Preferably, hoisting mechanism 6 can be adopted to drive and to promote base 1 do lifting rectilinear motion.
Preferably, on the upper surface promoting base 1, and its edge is provided with annular support member, in order to support quartz cover 2, and be arranged at intervals with multiple air bleed slot 11 on the top of this annular support member, air pressure and the temperature of the inner space formed in order to prevent annular support member and quartz cover 2 are too high.
As a variant embodiment of the present embodiment, often organizing in heating lamp group, adopting annular lamp tube to replace forming multiple bulbs of annular.Particularly, as shown in fig. 5e, often organize heating lamp group comprise one along workpiece to be machined circumferential hoop around annular lamp tube, wherein, annular lamp tube 43 corresponds to the fringe region of workpiece to be machined; Annular lamp tube 44 corresponds to the central area of workpiece to be machined.
In actual applications, often organize in heating lamp group the annular lamp tube that can also arrange more than two, and many annular lamp tubes are mutually nested.
It should be noted that, in the present embodiment, the quantity of heating lamp group is two groups, but the present invention is not limited thereto, and in actual applications, the quantity of heating lamp group can be more than three groups, and is often arranging a heat insulation loop between adjacent two heating lamp groups.
Also it should be noted that, in the above-described embodiments, often organize heating lamp group and form loop configuration by multiple bulb or at least one annular lamp tube, but the present invention is not limited thereto, in actual applications, often organize heating lamp group to be made up of the heating lamp of other arbitrary shapes, as long as it can form loop configuration, to realize each group of heating lamp group, radiation heating is carried out to the circumferential area of workpiece to be machined different radii.
Second embodiment
The heater that the present embodiment provides is compared with above-mentioned first embodiment, and its difference is only: the subregion of heating is different, and makes accommodation to the structure of heat insulating member.
Particularly, the vertical view of a kind of heater of semiconductor processing equipment that provides for second embodiment of the invention of Fig. 6 A.As shown in Figure 6A, in the present embodiment, the quantity of heating lamp group is six groups, and is intervally arranged along the circumference of workpiece to be machined; Often organize heating lamp group and comprise two bulbs 45.Heat insulating member is thermal insulation board 52, and this thermal insulation board 52 is arranged along the radial direction of workpiece to be machined, and between adjacent two groups of heating lamp groups, mutually isolated in order to the heat making the two produce.Easy understand, the technical scheme of the first embodiment is the radial subregion along workpiece to be machined 3, and the technical scheme of the second embodiment is the circumferencial direction subregion along workpiece to be machined 3.In addition, the 26S Proteasome Structure and Function of the quartz cover 2 in the present embodiment and lifting pedestal 1 is identical with above-mentioned first embodiment, does not repeat them here.
It should be noted that, in the present embodiment, often organize heating lamp group to be made up of at least one bulb 45, but the present invention is not limited thereto, in actual applications, the heating lamp composition heating lamp group of other arbitrary structures can also be adopted, such as, as shown in Figure 6B, often organize heating lamp group and comprise two mutually nested annular lamp tubes 46.
Also need illustrate, in the present embodiment, the quantity of heating lamp group is six groups, but the present invention is not limited thereto, in actual applications, the quantity of heating lamp group can be more than two, and accordingly makes adaptability design to the quantity of thermal insulation board and the size of heating lamp group and position.
It should be noted that further, the partitioned mode of heater is not limited to the two kinds of modes proposed in first, second embodiment above-mentioned, in actual applications, other partitioned mode can also be selected as the case may be, and should according to the difference of partitioned mode, the quantity of applicability design heating lamp group and heat insulating member, structure and arrangement mode.
Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (10)
1. a semiconductor processing equipment, the heater comprising reaction chamber He be provided at its inner portion, described heater comprises heating lamp group and is positioned at the quartz cover above described heating lamp group, and described quartz cover is for carrying workpiece to be machined; Described heating lamp group is used for carrying out radiation heating through described quartz cover to described workpiece to be machined, and it is characterized in that, the quantity of described heating lamp group is at least two groups, and the zones of different corresponding to described workpiece to be machined is intervally arranged; And described heater also comprises at least one heat insulating member, mutually isolated in order to the heat making each group of heating lamp group produce;
Described heater also comprises control unit, described control unit is used for when carrying out technique, according to the distribution of the sheet resistance of the described workpiece to be machined zones of different obtained in advance and the temperature of workpiece to be machined zones of different and the corresponding relation of sheet resistance, regulate the power be applied in each group of heating lamp group, thus regulate the film resistor Distribution value of described workpiece to be machined zones of different.
2. semiconductor processing equipment according to claim 1, is characterized in that, the acquisition pattern of the film resistor Distribution value of described workpiece to be machined zones of different is:
Carry out one-time process, and in technical process, utilize described control unit to regulate the power be applied in each group of heating lamp group, to make the temperature of workpiece to be machined zones of different identical;
After this process is completed, by detecting the distribution of the sheet resistance obtaining this workpiece to be machined zones of different.
3. semiconductor processing equipment according to claim 1, is characterized in that, often organize heating lamp group and adopt loop configuration, and described at least two group heating lamp groups is looped around the position corresponding with the circumference place of described workpiece to be machined different radii respectively.
4. semiconductor processing equipment according to claim 3, is characterized in that, described heat insulating member is heat insulation loop, and described heat insulation loop is looped around between two groups of adjacent heating lamp groups, in order to make the two mutually isolated.
5. semiconductor processing equipment according to claim 3, is characterized in that, often organizes heating lamp group and comprises multiple bulb, and arranges along the circumferential interval of described workpiece to be machined.
6. semiconductor processing equipment according to claim 3, is characterized in that, often organize heating lamp group comprise one or more along described workpiece to be machined circumferential hoop around annular lamp tube, and described many annular lamp tubes are mutually nested.
7. semiconductor processing equipment according to claim 1, is characterized in that, described at least two group heating lamp groups are intervally arranged along the circumference of described workpiece to be machined.
8. semiconductor processing equipment according to claim 7, is characterized in that, described heat insulating member is thermal insulation board, and described thermal insulation board is arranged along the radial direction of described workpiece to be machined, and between adjacent two groups of heating lamps, in order to make the two mutually isolated.
9. semiconductor processing equipment according to claim 7, is characterized in that, often organizes heating lamp group and comprises at least one bulb or fluorescent tube.
10. semiconductor processing equipment according to claim 1, is characterized in that, described semiconductor processing equipment is Pvd equipment, and for carrying out the depositing operation of TiAlN thin film to workpiece to be machined.
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| CN107723673A (en) * | 2016-08-12 | 2018-02-23 | 北京北方华创微电子装备有限公司 | Magnetically controlled sputter method and magnetic control sputtering device |
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| CN111074242A (en) * | 2018-10-19 | 2020-04-28 | 长鑫存储技术有限公司 | Adjusting method of heating device, heating device and chemical vapor deposition equipment |
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| CN113745135A (en) * | 2021-11-04 | 2021-12-03 | 北京北方华创微电子装备有限公司 | Process chamber |
| CN116162911A (en) * | 2023-02-24 | 2023-05-26 | 安徽光智科技有限公司 | Method for debugging uniformity of thin film prepared by magnetron sputtering method |
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| CN111463116A (en) * | 2020-04-27 | 2020-07-28 | 中国电子科技集团公司第四十六研究所 | Preparation method of double-layer epitaxy for MOS device structure |
| CN111463116B (en) * | 2020-04-27 | 2022-04-12 | 中国电子科技集团公司第四十六研究所 | Preparation method of double-layer epitaxy for MOS device structure |
| CN113745135A (en) * | 2021-11-04 | 2021-12-03 | 北京北方华创微电子装备有限公司 | Process chamber |
| CN113745135B (en) * | 2021-11-04 | 2022-03-22 | 北京北方华创微电子装备有限公司 | Process chamber |
| WO2023078100A1 (en) * | 2021-11-04 | 2023-05-11 | 北京北方华创微电子装备有限公司 | Process chamber |
| CN116162911A (en) * | 2023-02-24 | 2023-05-26 | 安徽光智科技有限公司 | Method for debugging uniformity of thin film prepared by magnetron sputtering method |
| CN116162911B (en) * | 2023-02-24 | 2024-06-11 | 安徽光智科技有限公司 | Method for debugging uniformity of thin film prepared by magnetron sputtering method |
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