CN107723673A - Magnetically controlled sputter method and magnetic control sputtering device - Google Patents
Magnetically controlled sputter method and magnetic control sputtering device Download PDFInfo
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- CN107723673A CN107723673A CN201610664192.5A CN201610664192A CN107723673A CN 107723673 A CN107723673 A CN 107723673A CN 201610664192 A CN201610664192 A CN 201610664192A CN 107723673 A CN107723673 A CN 107723673A
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- sputtering
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- pedestal
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of magnetically controlled sputter method and magnetic control sputtering device.This method includes：Step 1：Workpiece to be added is moved into processing chamber and is positioned on pedestal；Step 2：Pedestal is moved to heating location, heated to machined part, enters step 3 when the temperature of workpiece to be added reaches preset temperature；Step 3：The vacuum state of characterization processes chamber, if meeting magnetron sputtering technique requirement, carry out step 4, return to step 2 if being unsatisfactory for；Step 4：Pedestal is moved to process station, carries out magnetron sputtering to machined part.Magnetically controlled sputter method provided by the invention, temperature that can be to machined part and sputters the Pressure Rise Rate of environment and is detected, and to ensure to reach predetermined magnetron sputtering condition, substantially increases the yields of sputtering product.
Description
Technical field
The present invention relates to technical field of physical vapor deposition, more particularly, to a kind of magnetically controlled sputter method and at this
The magnetic control sputtering device used in method.
Background technology
PVD (physical vapour deposition (PVD)) is used as a kind of film deposition techniques, is mainly used in the deposition of various functions film, wide
It is general to be applied to the general semiconductor applications such as integrated circuit, solar cell, LED, FPD.
In some PVD production processes, thin film sputtering is typically carried out, it is necessary to will be held in the palm by heater at high temperature
Wafer (wafer) on disk is preheating to technological temperature.Such as AlN (aluminium nitride) thin film deposition.This high temperature PVD is to chamber
The conditions such as cleanliness factor, vacuum condition and temperature require more strict, and in 10-8Torr (support) below, underlayer temperature will for pressure requirements
Ask more than 500 DEG C, simultaneously for the quick heating of substrate requirement and quick cooling, to meet that Manipulator Transportation substrate temperature will
Ask.Under normal temperature or less than 300 DEG C technological temperatures, after target cleaning or pre-burning, pallet, which enters processing chamber, will not cause chamber
The background pressure rise of environment, or in the case where being evacuated pumping action can soon quick-recovery to process requested pressure；And in high temperature PVD
Under, the discharge quantity of pallet has a strong impact on the recovery of cavity environment, chamber pressure can not meet, ultimately result in apparently higher than normal temperature
Process results can not meet to require.
For the requirement of high temperature PVD, at present, the wafer on pallet can enter by preheating chamber first in the device
Row preheating, pallet reaches is passed to processing chamber after certain temperature by manipulator；Pallet is heated to technological requirement temperature by processing chamber
After degree, magnetron sputtering is carried out to wafer.Processing chamber only detects temperature of tray state before magnetron sputtering is carried out, not automatically
The current vacuum state of detection chambers.It is primarily present problems with：
Wafer and pallet first pass around preheating chamber heating, the wafer after heating before processing chamber is admitted to
It can not still reach technological requirement temperature with pallet, be heated again by processing chamber, processing chamber temperature is higher than preheating chamber
Temperature, pallet discharge quantity significantly increase.And processing chamber carries out the not current vacuum state of detection chambers before magnetron sputtering, if
Because the increase of pallet discharge quantity causes vacuum state can not meet technological requirement, thin film coating firmness can be reduced, so as to influence
PVD product yields.
The content of the invention
It is an object of the present invention to provide a kind of new solution of magnetically controlled sputter method.
According to the first aspect of the invention, there is provided a kind of magnetically controlled sputter method.This method includes：
Step 1：Workpiece to be added is moved into processing chamber and is positioned on pedestal；
Step 2：The pedestal is moved to heating location, the workpiece to be added is heated, when the workpiece to be added
Temperature enter step 3 when reaching preset temperature；
Step 3：The vacuum state of the processing chamber is detected, if meeting magnetron sputtering technique requirement, carries out step
4, return to step 2 if being unsatisfactory for；
Step 4：The pedestal is moved to process station, magnetron sputtering is carried out to the workpiece to be added.
Alternatively, the step 3 includes：
It is spaced at preset timed intervals, the vacuum state of processing chamber described in cycle detection.
Alternatively, the prefixed time interval is 300s；The vacuum state of characterization processes chamber includes：Characterization processes chamber
Pressure Rise Rate, and judge whether Pressure Rise Rate reaches predetermined value；When Pressure Rise Rate is less than or equal to 10000ntorr/s, carry out pre-
Sputtering.
Alternatively, the step 4 includes：
Step 4-1：Pre-sputtering is carried out to the workpiece to be added；
Step 4-2：Main sputtering is carried out to the workpiece to be added.
Alternatively, the step 4-1 includes：
The pedestal is moved to pre-sputtering position；
Masking disk is moved between target and the workpiece to be added；
Inert gas is passed through in the processing chamber；
Pre-sputtering is carried out, is pre-processed with the surface to the target.
Alternatively, the inert gas includes argon gas and nitrogen, wherein, the flow of argon gas is 30sccm, the flow of nitrogen
For 50sccm；The pre-sputtering includes：
The sputtering power for applying 3000W carries out pre-sputtering, and the duration is 30 seconds.
Alternatively, the step 4-2 includes：
Masking disk is removed between target and the workpiece to be added；
The pedestal is moved to main sputtering position；
Main sputtering is carried out to the workpiece to be added to form film on the workpiece to be added；And
The workpiece to be added is removed into the processing chamber.
Alternatively, the main sputtering includes：The sputtering power for applying 3000W carries out main sputtering, and the duration is 550 seconds.
Alternatively, the preset temperature is 650 DEG C.
According to the second aspect of the invention, there is provided a kind of magnetic control sputtering device.The device includes processing chamber, the work
Skill chamber uses magnetically controlled sputter method provided by the invention, is heated to machined part and magnetron sputtering.
Alternatively, it is provided with target above the processing chamber；It is provided with and is used for below the processing chamber
The pedestal of workpiece to be added is accepted, the pedestal is configured to lift between the heating location and the process station；
The processing chamber also includes：
Disk is covered, it is configured to be moved into and removes the region between the target and workpiece to be added；
Heater, it is between the pedestal and the workpiece to be added；And
Pressure Rise Rate detection means, it is configurable for detecting the Pressure Rise Rate in the processing chamber.
It was found by the inventors of the present invention that in the prior art, preheating chamber and magnetron sputtering chamber are two to be separated from each other
Individual chamber, wafer and pallet after preheating need to change chamber, can not ensure suitable temperature and vacuum state, cause product
Yields reduces.Therefore, the technical assignment or technical problem to be solved that the present invention to be realized are people in the art
It is that member never expects or it is not expected that, therefore the present invention is a kind of new technical scheme.
Magnetically controlled sputter method provided by the invention, temperature that can be to machined part and sputters the Pressure Rise Rate of environment and carries out
Detection, to ensure to reach predetermined magnetron sputtering condition, substantially increase the yields of sputtering product.
Magnetic control sputtering device provided by the invention, heater is provided with its processing chamber so as to machined part
Heating and sputtering avoid the process conditions caused by transfer chamber and are destroyed in same processing chamber.And the device
Detection and the control to temperature and Pressure Rise Rate can be realized.The device has the characteristics of integrated level is high, and sputtering yield is high.
By referring to the drawings to the present invention exemplary embodiment detailed description, further feature of the invention and its
Advantage will be made apparent from.
Brief description of the drawings
It is combined in the description and the accompanying drawing of a part for constitution instruction shows embodiments of the invention, and even
It is used for the principle for explaining the present invention together with its explanation.
Fig. 1：The structural representation of the magnetic control sputtering device of the embodiment of the present invention.
Fig. 2：The flow chart of the magnetically controlled sputter method of the embodiment of the present invention.
In figure, 3：Lowering or hoisting gear；4：Temperature measuring equipment；5：Heater；6：Pedestal；7：Pallet；71：Wafer；8：Shell；9：
Thimble；10：Target；11：Pressure Rise Rate detection means；12：Processing chamber；13：Cover disk；A：Heating location；B：Process station.
Embodiment
The various exemplary embodiments of the present invention are described in detail now with reference to accompanying drawing.It should be noted that：Unless have in addition
Body illustrates that the unlimited system of part and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
The scope of invention.
The description only actually at least one exemplary embodiment is illustrative to be never used as to the present invention below
And its application or any restrictions that use.
It may be not discussed in detail for technology, method and apparatus known to person of ordinary skill in the relevant, but suitable
In the case of, the technology, method and apparatus should be considered as part for specification.
In shown here and discussion all examples, any occurrence should be construed as merely exemplary, without
It is as limitation.Therefore, other examples of exemplary embodiment can have different values.
It should be noted that：Similar label and letter represents similar terms in following accompanying drawing, therefore, once a certain Xiang Yi
It is defined, then it need not be further discussed in subsequent accompanying drawing in individual accompanying drawing.
The invention provides a kind of magnetically controlled sputter method, as shown in Fig. 2 this method includes：
Step 1：Workpiece to be added is moved into processing chamber and is positioned on pedestal.Workpiece to be added can be wafer, also may be used
To be the pallet for carrying wafer.Single wafer can be placed directly on pedestal, can also multiple wafers be placed into pallet
On, then pallet is placed on pedestal.After workpiece to be added is put into pedestal, vacuumize process is carried out to processing chamber.It can adopt
Vacuumized with cold pump.The purpose vacuumized is that, by the part in processing chamber, such as pallet, the gas of releasing is discharged, made
Sputtering environment reaches the vacuum required by magnetron sputtering.
Step 2：The pedestal is moved to heating location, the workpiece to be added is heated, when the workpiece to be added
Temperature enter step 3 when reaching preset temperature.In this step, persistently judge whether the temperature of workpiece to be added reaches pre- constant temperature
Degree, is persistently heated up if not up to predetermined temperature.Preferably, predetermined temperature is 650 DEG C, at this temperature, processing chamber
Interior discharge quantity is stable, and the particle deposition effect of magnetron sputtering technique is good.In heating process, vacuumize and carrying out always.
Step 3：The vacuum state of the processing chamber is detected, if meeting magnetron sputtering technique requirement, carries out step
4, return to step 2 if being unsatisfactory for.In heating process, the vacuum state of characterization processes chamber.If being higher than predetermined value, after
Continuous heating, and continue to vacuumize processing chamber.In one example, Pressure Rise Rate can be carried out according to the time of interval setting
Detection, interval time are preferably 300s.Until Pressure Rise Rate reaches predetermined Pressure Rise Rate.It should be noted that during detection Pressure Rise Rate
Stop vacuumizing.When continuing to heat workpiece to be added, then recover to vacuumize to arrange with the gas for releasing the part in processing chamber
Go out.
Pressure Rise Rate refers to the numerical value of unit interval inner chamber chamber pressure rising under the conditions of airtight chamber.Pressure Rise Rate can correctly reflect
The current vacuum state of discharge quantity and chamber in chamber and pressure stability degree.For example, at the initial stage of heating, with the liter of temperature
Height, the part in processing chamber, such as pallet etc. is heated can discharge a large amount of gases, the gas are mainly organic gas, gas
Generation cause pressure rise in environment, the effect of magnetron sputtering is had adverse effect on.Therefore, Pressure Rise Rate is more low more favourable
In the effect of magnetron sputtering.It is higher in heating Pressure Rise Rate at initial stage, as continuous heating at a predetermined temperature, pallet etc. discharge
Gas can gradually decrease, Pressure Rise Rate can also decrease.Pressure Rise Rate is reduced to below predetermined Pressure Rise Rate and can carry out magnetic control and splash
Penetrate.Preferably, predetermined Pressure Rise Rate is 10000ntorr/min (1ntorr=10-9torr).When the Pressure Rise Rate of processing chamber is small
When equal to 10000ntorr/min, it is ensured that the film of magnetron sputtering technique depositing homogeneous.
Step 4：The pedestal is moved to process station, magnetron sputtering is carried out to the workpiece to be added, with wafer
Surface deposition film.
In a kind of specific embodiment of the present invention, magnetron sputtering includes：
S10, step 4-1：Pre-sputtering is carried out to the workpiece to be added；And
S20, step 4-2：Main sputtering is carried out to the workpiece to be added.
In order that plasma uniform deposition, will first carry out pre-sputtering.The purpose of pre-sputtering is to be adapted to master to splash to be formed
The process environments penetrated, so that thin film deposition is more uniform.
In step 4-1, pre-sputtering includes：
S110, the pedestal is moved to pre-sputtering position.
S120, will masking disk move between target and the workpiece to be added.Cover the paired sputtering particle of dish type stop with
It is avoided to fall on wafer.
S130, inert gas is passed through to carry out surface modification processes to the target in the processing chamber.For example, institute
Stating inert gas includes argon gas and nitrogen, wherein, the flow of argon gas is 30sccm, and the flow of nitrogen is 50sccm.Certainly, technique
The flow of gas need to be selected according to being actually needed, as long as can meet technological effect requirement.
S140, pre-sputtering is carried out, pre-processed with the surface to the target.For example, pre-sputtering includes：Apply
3000W sputtering power carries out pre-sputtering, and the duration is 30 seconds.By pre-sputtering, the environment in processing chamber reaches
The requirement of main sputtering.
In step 4-2, main sputtering includes：
S210, will masking disk removed between target and the workpiece to be added.
S220, the pedestal is moved to main sputtering position.
S230, main sputter to form film on the workpiece to be added is carried out to the workpiece to be added using the target.
For example, main sputtering includes：Continue in the processing chamber to be passed through inert gas, wherein, the flow of argon gas is 30sccm, nitrogen
Flow be 50sccm.And it is 3000W to maintain sputtering power, the duration is 550 seconds.
S240, the workpiece to be added removed into the processing chamber.
In addition, in order to ensure the effect of the magnetron sputtering of wafer, also include after magnetron sputtering to be added to what is sputtered
Workpiece is cooled down.
Magnetically controlled sputter method provided by the invention, the domestic Pressure Rise Rate of temperature and sputtering ring that can be to machined part are carried out
Detection, it ensure that sputter temperature and sputter the vacuum state of environment, substantially increase the yields of sputtering part.
Present invention also offers a kind of magnetic control sputtering device, as shown in figure 1, the device includes processing chamber 12, process cavity
Room 12 uses magnetically controlled sputter method provided by the invention, is heated to machined part and magnetron sputtering.
Further, processing chamber 12 is surrounded by shell 8 and formed.The top of processing chamber 12 is provided with target 10, example
Such as, aluminium target.The pedestal 6 for accepting workpiece to be added is provided with the lower section of processing chamber 12.Pedestal 6 is configured to
Lifted between heating location A and process station B.Wherein, when sputtering technology includes pre-sputtering and main sputter step, process station
B can also include the different pre-sputtering position of height and main sputtering position (not shown).
The device also includes：Cover disk 13, heater 5 and Pressure Rise Rate detection means 11.Masking disk 13 is configured to
The region for being enough moved into and removing between target 10 and workpiece to be added.Heater 5 is between pedestal 6 and workpiece to be added.Pressure
The rate of liter detection means 11 is configurable for the Pressure Rise Rate in characterization processes chamber.
Processing chamber 12 is provided with process station B and heating location A, as shown in figure 1, being followed successively by process station from top to bottom
B, heating location A.Pedestal 6 and lowering or hoisting gear 3 are arranged in processing chamber 12.Lowering or hoisting gear 3 includes relative along operative orientation
The first end of setting and the second end, operative orientation are the direction that lowering or hoisting gear 3 is stretched, contracted, and first end and pedestal 6 can use ability
Technological means known to domain, as bolt connection is fixedly connected, the second end and it is fixedly connected with the bottom wall of processing chamber.One
In individual example, wafer 71 is placed on pallet 7, and pallet 7 is arranged on the top of the pedestal 6 by thimble 9.
Heater 5 is arranged on pedestal 6.Heater 5 also includes temperature measuring equipment 4, for detection pedestal 6 or pallet
7 or the temperature of wafer 71.The test side of Pressure Rise Rate detection means 11 is located in processing chamber 12, for characterization processes chamber 12
Interior Pressure Rise Rate.
In addition, it is unshowned, the gas input port for inputting process gas is additionally provided with processing chamber 12 and is taken out true
The interface of empty device.The other end Joining Technology source of the gas of gas input port.Gas input port is additionally provided with MFC (gas flow controls
Device processed), the flow for control input gas.The other end connection vaccum-pumping equipment of interface, such as cold pump, for processing chamber
12 vacuumize.
The magnetic control sputtering device can be carried out heating and two processing steps of magnetron sputtering in same processing chamber 12, be subtracted
Lack the setting of preheating chamber, simplified the structure of equipment, save the time of conversion chamber, and it is possible to prevente effectively from conversion
The change of chamber Pressure Rise Rate, vacuum environment caused by temperature during processing chamber 12.And efficiently solve original magnetron sputtering to set
It is standby due to 12 hypertonia of processing chamber when the problem of caused thin film coating is insecure, Quality Down.
The magnetic control sputtering device, eliminates preheating chamber.Preheat and sputter in same processing chamber and ensure that and splash
The stabilization of environment is penetrated, shortens technological process, and can be to sputter temperature and the vacuum state of sputtering environment, such as Pressure Rise Rate
Etc. being detected and controlled, the yields of sputtering part is substantially increased.
Although some specific embodiments of the present invention are described in detail by example, the skill of this area
Art personnel it should be understood that example above merely to illustrating, the scope being not intended to be limiting of the invention.The skill of this area
Art personnel to above example it should be understood that can modify without departing from the scope and spirit of the present invention.This hair
Bright scope is defined by the following claims.
Claims (11)
- A kind of 1. magnetically controlled sputter method, it is characterised in that including：Step 1：Workpiece to be added is moved into processing chamber and is positioned on pedestal；Step 2：The pedestal is moved to heating location, the workpiece to be added is heated, when the temperature of the workpiece to be added Degree enters step 3 when reaching preset temperature；Step 3：The vacuum state of the processing chamber is detected, if meeting magnetron sputtering technique requirement, carries out step 4, such as Fruit is unsatisfactory for then return to step 2；Step 4：The pedestal is moved to process station, magnetron sputtering is carried out to the workpiece to be added.
- 2. magnetically controlled sputter method according to claim 1, it is characterised in that the step 3 includes：It is spaced at preset timed intervals, the vacuum state of processing chamber described in cycle detection.
- 3. magnetically controlled sputter method according to claim 2, it is characterised in that the prefixed time interval is 300s；Detection The vacuum state of processing chamber includes：The Pressure Rise Rate of characterization processes chamber, and judge whether Pressure Rise Rate reaches predetermined value；When pressure rises When rate is less than or equal to 10000ntorr/s, pre-sputtering is carried out.
- 4. magnetically controlled sputter method according to claim 1, it is characterised in that the step 4 includes：Step 4-1：Pre-sputtering is carried out to the workpiece to be added；Step 4-2：Main sputtering is carried out to the workpiece to be added.
- 5. magnetically controlled sputter method according to claim 4, it is characterised in that the step 4-1 includes：The pedestal is moved to pre-sputtering position；Masking disk is moved between target and the workpiece to be added；Inert gas is passed through in the processing chamber；Pre-sputtering is carried out, is pre-processed with the surface to the target.
- 6. magnetically controlled sputter method according to claim 5, it is characterised in that the inert gas includes argon gas and nitrogen, Wherein, the flow of argon gas is 30sccm, and the flow of nitrogen is 50sccm；The pre-sputtering includes：The sputtering power for applying 3000W carries out pre-sputtering, and the duration is 30 seconds.
- 7. magnetically controlled sputter method according to claim 4, it is characterised in that the step 4-2 includes：Masking disk is removed between target and the workpiece to be added；The pedestal is moved to main sputtering position；Main sputtering is carried out to the workpiece to be added to form film on the workpiece to be added；AndThe workpiece to be added is removed into the processing chamber.
- 8. magnetically controlled sputter method according to claim 7, it is characterised in that the main sputtering includes：Apply splashing for 3000W Penetrate power and carry out main sputtering, the duration is 550 seconds.
- 9. magnetically controlled sputter method according to claim 1, it is characterised in that the preset temperature is 650 DEG C.
- 10. a kind of magnetic control sputtering device, it is characterised in that including processing chamber, the processing chamber uses such as claim 1-9 Described magnetically controlled sputter method, is heated and magnetron sputtering to machined part.
- 11. magnetic control sputtering device according to claim 10, it is characterised in thatTarget (10) is provided with above the processing chamber (12)；It is provided with and is used for below the processing chamber (12) The pedestal (6) of workpiece to be added is accepted, the pedestal (6) is configured between the heating location and the process station Lifting；The processing chamber also includes：Disk (13) is covered, it is configured to be moved into and removes the region between the target (10) and workpiece to be added；Heater (5), it is between the pedestal (6) and the workpiece to be added；AndPressure Rise Rate detection means (11), it is configurable for detecting the Pressure Rise Rate in the processing chamber.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610664192.5A CN107723673A (en) | 2016-08-12 | 2016-08-12 | Magnetically controlled sputter method and magnetic control sputtering device |
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| CN201610664192.5A CN107723673A (en) | 2016-08-12 | 2016-08-12 | Magnetically controlled sputter method and magnetic control sputtering device |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101068948A (en) * | 2004-11-08 | 2007-11-07 | 应用材料股份有限公司 | Physical vapor deposition chamber having a rotatable substrate pedestal |
| CN104694890A (en) * | 2015-01-05 | 2015-06-10 | 湖南普照信息材料有限公司 | Sputtering chamber pressure stabilizing method, sputter coating method and stable-pressure sputtering device |
| CN105448768A (en) * | 2014-06-19 | 2016-03-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor processing equipment |
-
2016
- 2016-08-12 CN CN201610664192.5A patent/CN107723673A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101068948A (en) * | 2004-11-08 | 2007-11-07 | 应用材料股份有限公司 | Physical vapor deposition chamber having a rotatable substrate pedestal |
| CN105448768A (en) * | 2014-06-19 | 2016-03-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor processing equipment |
| CN104694890A (en) * | 2015-01-05 | 2015-06-10 | 湖南普照信息材料有限公司 | Sputtering chamber pressure stabilizing method, sputter coating method and stable-pressure sputtering device |
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Application publication date: 20180223 |