CN110565074B - Susceptor heating method and susceptor heating apparatus - Google Patents
Susceptor heating method and susceptor heating apparatus Download PDFInfo
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- CN110565074B CN110565074B CN201910876843.0A CN201910876843A CN110565074B CN 110565074 B CN110565074 B CN 110565074B CN 201910876843 A CN201910876843 A CN 201910876843A CN 110565074 B CN110565074 B CN 110565074B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Abstract
The invention provides a base heating method, wherein a base comprises a first heating area and at least one second heating area, and the first heating area and each second heating area are used for heating in a partitioning manner; the susceptor heating method includes: acquiring the current heating power of a first heating area and the current temperature of a second heating area; judging whether the current temperature of the second heating area meets a preset condition or not; when the current temperature of the second heating area meets a preset condition, adjusting the heating power of the second heating area according to the target temperature, the current temperature of the second heating area and the current heating power of the first heating area so as to reduce the temperature difference between the second heating area and the first heating area; and when the current temperature of the second heating area does not meet the preset condition, adjusting the heating power of the second heating area according to a preset rule. The invention also provides a base heating device. The invention can improve the uniformity and stability of the heating of the base.
Description
Technical Field
The embodiment of the invention relates to the technical field of semiconductor processing, in particular to a base heating method and a base heating device.
Background
The chemical vapor deposition process is a process mode in which a plurality of process gases are used for coating or etching a substrate in a chemical reaction mode at a certain temperature and pressure. Fig. 1 is a schematic view of a process chamber for performing a chemical vapor deposition process in the prior art, as shown in fig. 1, in a currently adopted process chamber 1, a susceptor 3 is used as a bearing structure of a substrate, wherein heating devices (such as heating wires and the like) are uniformly distributed in the susceptor 3; by heating the susceptor 3, heat is conducted to the substrate 2, causing the process gases to react at a temperature and deposit a film on the substrate 2 or react with substances on the substrate surface. The stability and uniformity of heating of the susceptor 3 directly affects the results of the process. Currently, a typical susceptor heating control method is: the temperature of the base 3 is detected by the thermocouple 4, and the detected temperature is transmitted to the temperature controller, and the temperature controller adjusts the output power of the heating device according to the temperature and the preset heating temperature, so that the temperature of the base is controlled, and the substrate is stably heated. In this way, the heating devices of the whole susceptor are uniformly controlled as a whole structure, but the distribution of the heating devices in the whole susceptor cannot be guaranteed to be uniform, the heating power of the whole heating device is high, and the heating temperature of the susceptor 3 is not uniform once the heating power has a slight error.
In order to solve the above problems, some other prior arts propose a zone heating method. Fig. 2 is a schematic diagram illustrating a principle of zone heating in the prior art, and fig. 3 is a schematic diagram illustrating a base divided into a plurality of heating zones in the prior art, as shown in fig. 2 and fig. 3, the base 3 is divided into three heating zones, i.e., an outer zone 31, a middle zone 32, and an inner zone 33, each heating zone is provided with a thermocouple to detect temperature, and a control loop corresponding to the plurality of heating zones is formed by a temperature controller and the thermocouple to control heating of each heating zone. The manner of dividing the susceptor 3 into a plurality of heating zones and controlling the temperature of each heating zone individually is beneficial to improving the uniformity of the distribution of the heating devices on the whole susceptor 3, however, in this manner, the heating of adjacent heating zones still interfere with each other, resulting in unstable and large fluctuation of the temperature on the susceptor 3.
Disclosure of Invention
The embodiment of the invention aims to solve at least one technical problem in the prior art, and provides a base heating method and a base heating device.
In order to achieve the above object, an embodiment of the present invention provides a susceptor heating method, where the susceptor includes a first heating region and at least one second heating region, and the first heating region and each of the second heating regions are used for zone heating; wherein the susceptor heating method comprises:
acquiring the current heating power of the first heating area and the current temperature of the second heating area;
judging whether the current temperature of the second heating area meets a preset condition or not;
when the current temperature of the second heating area meets a preset condition, adjusting the heating power of the second heating area according to a target temperature, the current temperature of the second heating area and the current heating power of the first heating area, so that the temperature difference between the second heating area and the first heating area is reduced;
and when the current temperature of the second heating area does not meet the preset condition, adjusting the heating power of the second heating area according to a preset rule.
Optionally, the preset conditions are: the current temperature of the second heating zone is greater than a preset temperature and less than an overshoot temperature, wherein the preset temperature is less than the target temperature, and the overshoot temperature is greater than the target temperature.
Optionally, when the current temperature of the second heating region does not satisfy a preset condition, the susceptor heating method further includes:
judging whether the current temperature of the second heating area is less than or equal to the preset temperature or not;
the preset rules include:
and when the current temperature of the second heating area is less than or equal to the preset temperature, adjusting the heating power of the second heating area to the maximum value.
Optionally, when the current temperature of the second heating region does not satisfy a preset condition, the susceptor heating method further includes:
judging whether the current temperature of the second heating area is greater than or equal to the overshoot temperature;
the preset rules include:
stopping heating the second heating zone when the current temperature of the second heating zone is greater than or equal to the overshoot temperature.
Optionally, the adjusting the heating power of the second heating area according to the current temperature of the second heating area and the current heating power of the first heating area so as to reduce the temperature difference between the second heating area and the first heating area includes:
determining a heating power coefficient of the second heating area according to the target temperature, the preset temperature, the current temperature of the second heating area, the rated heating power of the second heating area and the rated heating power of the first heating area;
and determining the heating power of the second heating area according to the current heating power of the first heating area and the heating power coefficient.
Optionally, the heating power coefficient of the second heating zone is determined according to the following formula:
X＝K(N-U)*W2/(L*(W2+W1))；
wherein X is the heating power coefficient, K is a coefficient set according to the target temperature, N is the preset temperature, U is the current temperature of the second heating area, and W is1Rated heating power, W, of the first heating zone2And the rated heating power of the second heating area is L, and the target temperature is L.
Optionally, the susceptor heating method further comprises:
acquiring the current temperature of the first heating area;
and controlling the heating power of the first heating area according to the difference between the current temperature of the first heating area and the target temperature, so that the temperature of the first heating area is consistent with the target temperature.
The embodiment of the invention also provides a pedestal heating device, wherein the pedestal comprises a first heating zone and at least one second heating zone; wherein the susceptor heating device includes: the device comprises a detection module, a processor and a power controller;
the detection module is used for acquiring the current heating power of the first heating area and the current temperature of the second heating area;
the processor comprises a judging module and a calculating module;
the judging module is connected with the detecting module and used for judging whether the current temperature of the second heating area meets a preset condition or not;
the calculating module is connected with the judging module and is used for calculating the heating power of the second heating area according to the target temperature, the current temperature of the second heating area and the current heating power of the first heating area when the current temperature of the second heating area meets the preset condition;
the power controller is connected with the processor and used for adjusting the heating power of the second heating area according to the calculation result of the calculation module so as to reduce the temperature difference between the second heating area and the first heating area;
the power controller is further used for adjusting the heating power of the second heating area according to a preset rule when the current temperature of the second heating area does not meet a preset condition.
Optionally, the preset conditions are: the current temperature of the second heating zone is greater than a preset temperature and less than an overshoot temperature, wherein the preset temperature is less than the target temperature, and the overshoot temperature is greater than the target temperature.
Optionally, the determining module is further configured to determine whether the temperature of the second heating area is less than or equal to a preset temperature when the current temperature of the second heating area does not satisfy a preset condition;
the preset rules include:
and when the current temperature of the second heating area is less than or equal to the preset temperature, adjusting the heating power of the second heating area to the maximum value.
Optionally, the determining module is further configured to determine whether the current temperature of the second heating region is greater than or equal to the overshoot temperature when the current temperature of the second heating region does not satisfy a preset condition;
the preset rules include:
when the current temperature of the second heating area is greater than or equal to the overshoot temperature, adjusting the heating power of the second heating area to zero.
Optionally, the calculation module comprises:
the first calculation unit is used for determining a heating power coefficient of the second heating area according to the target temperature, the preset temperature, the current temperature of the second heating area, the rated heating power of the second heating area and the rated heating power of the first heating area;
and the second calculation unit is connected with the first calculation unit and used for determining and obtaining the heating power of the second heating area according to the current heating power of the first heating area and the heating power coefficient.
Optionally, the second calculation unit is configured to determine a heating power coefficient of the second heating region according to the following formula:
X＝K(N-U)*W2/(L*(W2+W1))；
wherein X is the heating power coefficient, K is an empirical value set according to the target temperature, N is the preset temperature, U is the current temperature of the second heating zone, and W is the current temperature of the second heating zone1Rated heating power, W, of the first heating zone2And the rated heating power of the second heating area is L, and the target temperature is L.
The embodiment of the invention has the following beneficial effects:
by adopting the base heating method and the base heating device provided by the embodiment of the invention, the base is divided into the first heating area and the second heating area, and when the current temperature of the second heating area meets the preset condition, the heating power of the second heating area is adjusted according to the target temperature, the current temperature of the second heating area and the current heating power of the first heating area, so that the temperature difference between the second heating area and the first heating area is reduced. Therefore, compared with the prior art, when the heating power of the second heating area is adjusted, the control is performed based on the difference between the temperature of the second heating area and the target temperature, and the heating power of the first heating area is combined, so that when the power of the first heating area is changed, the power of the second heating area is also changed correspondingly, the problem that the temperature of a plurality of heating areas fluctuates in the prior art is solved, and the uniformity and the stability of the base heating are improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the embodiments of the invention without limiting the embodiments of the invention. In the drawings:
FIG. 1 is a schematic view of a prior art process chamber for performing a chemical vapor deposition process;
FIG. 2 is a schematic diagram of zone heating in the prior art;
FIG. 3 is a schematic diagram of a prior art susceptor divided into a plurality of heating zones;
FIG. 4 is a flowchart illustrating a method for heating a susceptor according to an embodiment of the present invention;
FIG. 5 is a schematic diagram illustrating a heating region of a susceptor according to an embodiment of the present invention;
FIG. 6 is a second flowchart of a susceptor heating method according to an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a susceptor heating apparatus according to an embodiment of the present invention;
FIG. 8 is a schematic structural diagram of a semiconductor processing apparatus according to an embodiment of the present invention.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating embodiments of the invention, are given by way of illustration and explanation only, not limitation.
The embodiment of the invention provides a base heating method, wherein a base comprises a first heating area and at least one second heating area, and the first heating area and each second heating area are used for zone heating. Fig. 4 is a flowchart of a susceptor heating method according to an embodiment of the present invention, and as shown in fig. 4, the susceptor heating method includes the following steps:
and S110, acquiring the current heating power of the first heating area and the current temperature of the second heating area.
S120, judging whether the current temperature of the second heating area meets a preset condition or not; if yes, go to step S130; if not, go to step S140.
S130, adjusting the heating power of the second heating area according to the target temperature, the current temperature of the second heating area and the current heating power of the first heating area, so that the temperature difference between the second heating area and the first heating area is reduced.
And S140, adjusting the heating power of the second heating area according to a preset rule.
The temperature of the first heating area can be controlled by a temperature control method in the prior art, and specifically, a temperature acquisition device, such as a thermocouple, can be disposed in the first heating area. The temperature acquisition device is connected with the temperature controller, and the temperature controller can control the heating power of the first heating zone according to the temperature and the target temperature acquired by the temperature acquisition device in the first heating zone, so that the temperature of the first heating zone is consistent with the target temperature, namely, the current heating power of the first heating zone is adjusted in real time along with the difference between the first heating zone and the target temperature. It should be noted that the temperatures in the embodiments of the present invention are the same or substantially the same.
Wherein, the preset rule can be: heating the second heating area with the heating power kept at a fixed value; or stopping heating the second heating area; still alternatively, the heating power of the second heating region may be adjusted according to the target temperature, the current temperature of the second heating region, and the current heating power of the first heating region. The "meeting the preset condition" may be set according to actual needs, and specifically may be: close to the target temperature.
In the prior art, when the temperature of each heating zone is controlled, the temperature of each heating zone is detected, and when the temperature of a certain heating zone is inconsistent with a target temperature, the heating power of the zone is adjusted. This would cause the heating of adjacent heating zones to interfere with each other, resulting in unstable and large fluctuations in temperature on the susceptor 3. Specifically, as shown in FIG. 2, assuming that the temperature of the middle region 32 is high, the middle region 32 with high temperature transfers heat to the outer region 31 with low temperature, resulting in the current temperature of the outer region 31 reaching the target temperature, at which time the heating device controlling the outer region 31 stops heating. However, the outer zone 31 cannot maintain the temperature of the outer zone 31 at the target temperature due to the heat transfer of the middle zone 32, so that the temperature of the outer zone 31 will fall back soon, and at this time, the control heating device heats the outer zone 31 again, and so on, causing the temperature of the outer zone 31 to fluctuate. For the above reasons, the temperature of the plurality of heating regions on the entire susceptor fluctuates, and the uniformity and stability of susceptor heating are poor.
By adopting the base heating method of the embodiment of the invention, the base is divided into the first heating area and the second heating area, when the current temperature of the second heating area meets the preset condition, the heating power of the second heating area is adjusted according to the target temperature, the current temperature of the second heating area and the current heating power of the first heating area, so that the temperature difference between the second heating area and the first heating area is reduced, and compared with the temperature control method in the prior art, the method in the embodiment of the invention not only performs control based on the difference between the temperature of the second heating area and the target temperature, but also combines the heating power of the first heating area when adjusting the heating power of the second heating area, so that when the power of the first heating area is changed, the power of the second heating area is also changed correspondingly, and the problem of temperature fluctuation of a plurality of heating areas in the prior art can not occur, the uniformity and stability of susceptor heating are improved.
The heating method according to the embodiment of the present invention is described in detail below, specifically, fig. 5 is a schematic diagram illustrating division of the heating regions of the susceptor according to the embodiment of the present invention, as shown in fig. 5, in the embodiment of the present invention, the division of the susceptor into three heating regions specifically includes: two second heating zones 35 located at the center and edge of the susceptor, respectively, and a first heating zone 34 located between the two second heating zones 35. Heating devices capable of independently heating are arranged in the first heating area 34 and the two second heating areas 35, and the heating temperature of the heating area where the heating device is arranged is controlled by controlling the heating power of the heating devices. In practical application, the number of the heating zones is not limited to three, and may be two or more than three, and for the division of the first heating zone 34 and the second heating zone 35, the heating zone on the edge of the susceptor may be used as the first heating zone 34, and the rest of the heating zones are the second heating zone 35, which is not limited herein.
The heating of the susceptor comprises two processes, one of which is the automatic adjustment of the heating power of the first heating zone 34 by means of a temperature controller in a closed-loop control, in particular, the heating of the first heating zone 34 comprises the following steps:
s201, acquiring the current temperature of the first heating area 34.
S202, controlling the heating power of the first heating region 34 according to the difference between the current temperature and the target temperature of the first heating region 34, so that the temperature of the first heating region 34 is consistent with the target temperature. The target temperature can be issued to the temperature controller by the upper computer.
The other process is as follows: the heating power of the two second heating zones 35 is controlled by the upper computer, so that the heating power of the two second heating zones 35 is adjusted according to the heating power of the first heating zone 34. Taking one of the second heating zones 35 as an example, before the heating power of the second heating zone 35 is adjusted, a preset condition may be set, where the preset condition may be: the current temperature of the second heating zone 35 is greater than a preset temperature and less than an overshoot temperature, wherein the preset temperature is less than the target temperature, and the overshoot temperature is greater than the target temperature. Further, when the current temperature of the second heating area 35 does not satisfy the preset condition, a preset rule may be further set to adjust the heating power of the second heating area 35, where the preset rule includes: when the current temperature of the second heating area 35 is less than or equal to the preset temperature, adjusting the heating power of the second heating area 35 to the maximum value; and/or when the current temperature of the second heating region 35 is greater than or equal to the overshoot temperature, stopping heating the second heating region 35.
Fig. 6 is a second flowchart of a susceptor heating method according to an embodiment of the present invention, as shown in fig. 6, the susceptor heating method includes the following steps:
and S210, acquiring the current heating power of the first heating area 34 and the current temperature of the second heating area 35.
S220, judging whether the current temperature of the second heating area 35 meets a preset condition, and if the current temperature of the second heating area 35 does not meet the preset condition, executing the step S230 and the step S240; if the current temperature of the second heating area 35 satisfies the preset condition, step S250 is executed.
S230, determining whether the current temperature of the second heating area 35 is less than or equal to a preset temperature, if so, adjusting the heating power of the second heating area 35 to a maximum value, that is, adjusting the heating power of the heating device in the second temperature control area 35 to a maximum heating power; if not, go to step S240.
In this step, the preset temperature may be set according to actual needs in the application process, and before the temperature of the second heating region 35 reaches the preset temperature, the second heating region 35 may be heated with a heating power kept higher, so that in the initial stage of the susceptor heating, the second heating region 35 may approach the target temperature at a faster heating speed, and in the embodiment of the present invention, the preset temperature may be 90% of the target temperature.
S240, determining whether the temperature of the second heating region 35 is greater than or equal to the overshoot temperature. If so, stopping heating the second heating area 35; wherein, the heating may be stopped by adjusting the heating power of the second heating area 35 to zero; if not, the heating power of the second heating area 35 may continue to be adjusted in the manner of step S250.
In this step, excessive heating is prevented by setting the overshoot temperature. Wherein, the overshoot temperature can be set according to the requirement in the application process, in the embodiment of the invention, the overshoot temperature can be the target temperature plus 1 ℃; of course, the overshoot temperature may be set to other values close to the target temperature, for example, the overshoot temperature is 110% of the target temperature.
It should be noted that the sequence of the above step S230 and step S240 is not particularly limited, and the step S240 may be executed first when the current temperature of the second heating area 35 does not satisfy the preset condition, and the determination process of the step S230 may be executed when the current temperature of the second heating area 35 is determined to be less than the overshoot temperature in the step S240.
And S250, adjusting the heating power of the second heating area 35 according to the target temperature, the current temperature of the second heating area 35 and the current heating power of the first heating area 34, so that the temperature difference between the second heating area 35 and the first heating area 34 is reduced.
In the embodiment of the present invention, step S250 includes the following sub-steps:
and S251, determining a heating power coefficient of the second heating area 35 according to the target temperature, the preset temperature, the current temperature of the second heating area 35, the rated heating power of the second heating area 35 and the rated heating power of the first heating area 34.
Specifically, for the susceptor, the material of each heating zone is the same, so the specific heat capacity of each heating zone is the same, and according to the formula Q ═ C × M × Δ T (where Q is the amount of heat generated by heating, C is the specific heat capacity of the heated object, Δ T is the temperature at which the heated object is raised, and M is the mass of the heated object), it can be seen that each heating zone is raised to the same temperature, and the required amount of heat is in a linear relationship with the mass. Further, it is known that Q ═ W × t (W is a rated power, and t is time), and the mass of the heating zone and the power of the heating device are linearly related to each other in the same time. The resulting heating power coefficient is:
X＝K(N-U)*W2/(L*(W2+W1)) (1)
wherein X is the heating power coefficient, N is the preset temperature, U is the current temperature of the second heating zone 35, W1Rated heating power, W, of the first heating zone 342The rated heating power of the second heating zone 35, L is the target temperature, and K is a parameter set according to the target temperature. The value of K can be determined according to a mode of heating and temperature measurement for multiple times, so as to adjust the amplification of the heating power coefficient X. For example, as shown in fig. 5, the first heating region 34 is located between two second heating regions 35, so that the first heating region 34 is subjected to heat transfer from the second heating regions 35 on both sides, resulting in the temperature of the first heating region 34 increasing faster than the temperature of the second heating regions 35The rate of increase, and therefore, a larger K value can be set in order to increase the rate of increase in the temperature of the second heating zone 35. Similarly, when the heating zone at the edge of the susceptor is used as the first heating zone 34, and the heating zone at the middle of the susceptor and the heating zone at the center of the susceptor are used as the second heating zone 35, the temperature increase rate of the second heating zone 35 located at the middle of the susceptor is fast, and at this time, the K value of the second heating zone 35 located at the middle of the susceptor may be set to be small, so that the temperature increase rate of the second heating zone 35 is reduced.
And S252, determining the heating power of the second heating area 35 according to the current heating power and the heating power coefficient of the first heating area 34.
The heating powers of the first heating zone 34 and the second heating zone 35 are mathematically related, and the heating power P of the second heating zone 35 is determined2Comprises the following steps:
P2＝P1*X (2)
wherein P is1The current heating power of the first heating zone 34. The heating power of the first heating area 34 is the power obtained by adjusting the temperature controller according to the temperature of the first heating area 34 and the target temperature, that is, the power obtained in steps S201 to S202.
Based on the same inventive concept, the embodiment of the present invention further provides a susceptor heating apparatus, wherein the susceptor comprises a first heating region 34 and at least one second heating region 35, and the first heating region 34 and the second heating region 35 are both provided with heating devices. In the embodiment of the present invention, the heating power of a certain heating region refers to calculating the heating power of a heating device of a certain heating region. Fig. 7 is a schematic structural diagram of a susceptor heating apparatus according to an embodiment of the present invention, which is shown in fig. 5 and 7, and includes: processor 810, power controller 820, and detection module 830.
The detection module 830 is configured to obtain the current heating power of the first heating region 34 and the current temperature of the second heating region 35. A temperature acquisition device (e.g., a thermocouple, etc.) may be disposed in the second heating region 35 of the susceptor, and the current temperature of the second heating region 35 acquired by the detection module 830 is the temperature acquired by the temperature acquisition device in the second heating region 35.
In addition, the susceptor heating apparatus may further include a temperature controller 840, wherein the temperature controller 840 is configured to control the heating power of the first heating region 34 according to the target temperature and the temperature collected by the temperature collecting device in the first heating region 34, so that the temperature of the first heating region 34 is consistent with the target temperature, that is, the current heating power of the first heating region 34 is adjusted in real time along with the difference between the first heating region 34 and the target temperature. The target temperature may be issued to the temperature controller by the processor 810.
The determining module 811 is connected to the detecting module 830 for determining whether the current temperature of the second heating area 35 satisfies a preset condition. The calculating module 812 is connected to the judging module 811, and is configured to calculate the heating power of the second heating area 35 according to the target temperature, the current temperature of the second heating area 35, and the current heating power of the first heating area 34 when the judging module 811 judges that the current temperature of the second heating area 35 meets the preset condition.
The power controller 820 is connected to the processor 810 for adjusting the heating power of the second heating region 35 according to the calculation result of the calculation module 812 in the processor 810, so that the temperature difference between the second heating region 35 and the first heating region 34 is reduced. The power controllers 820 may correspond to the second heating regions 35 one by one, and each power controller 820 is configured to adjust the heating power of a corresponding one of the second heating regions 35. The power controller 820 is further configured to adjust the heating power of the second heating area 35 according to a preset rule when the current temperature of the second heating area 35 does not satisfy a preset condition.
When the base heating device provided by the embodiment of the invention is adopted to adjust the heating power of the second heating area, the control is not only carried out based on the difference between the temperature of the second heating area and the target temperature, but also the heating power of the first heating area is combined, so that when the power of the first heating area is changed, the power of the second heating area is also correspondingly changed, the problem that the temperatures of a plurality of heating areas in the prior art fluctuate is avoided, and the uniformity and the stability of base heating are improved.
As described above, the preset conditions are: the current temperature of the second heating zone 35 is greater than a preset temperature and less than an overshoot temperature, wherein the preset temperature is less than the target temperature, and the overshoot temperature is greater than the target temperature.
In some embodiments, the determining module 811 is further configured to determine whether the current temperature of the second heating region 35 is less than or equal to the preset temperature and whether the temperature of the second heating region 35 is greater than or equal to the overshoot temperature when the current temperature of the second heating region 35 does not satisfy the preset condition.
The power controller 820 is further configured to adjust the heating power of the second heating area 35 according to a preset rule, specifically, the preset rule includes: when the current temperature of the second heating area 35 is less than or equal to the preset temperature, adjusting the heating power of the second heating area 35 to the maximum value; and/or, when the current temperature of the second heating region is greater than or equal to the overshoot temperature, the heating power of the second heating region 35 is adjusted to zero.
In a specific application, the processor 810 may include an upper computer and a Programmable Logic Controller (PLC), the determining module 811 and the calculating module 812 may be integrated in the upper computer, and the programmable logic controller converts an output result (e.g., heating power calculated by the calculating module 812) of the upper computer into a corresponding logic control instruction to control the power controller 820 or the detecting module 830.
In some embodiments, the calculation module 812 includes: a first calculation unit and a second calculation unit. The first calculating unit is configured to determine a heating power coefficient of the second heating region 35 according to the target temperature, the preset temperature, the current temperature of the second heating region 35, the rated heating power of the second heating region 35, and the rated heating power of the first heating region 34. In particular, the first calculation unit is configured to determine the heating power coefficient of the second heating region 35 according to the following formula:
X＝K(N-U)*W2/(L*(W2+W1))。
wherein X is a heating power coefficient, K is an empirical value set according to a target temperature, N is a preset temperature, U is a current temperature of the second heating zone 35, and W is a current temperature of the second heating zone1Rated heating power, W, of the first heating zone 342Is the rated heating power of the second heating zone 35, and L is the target temperature.
The second calculating unit is connected to the first calculating unit and is configured to determine the heating power of the second heating area 35 according to the current heating power and the heating power coefficient of the first heating area 34. That is, the current heating power of the first heating region 34 is multiplied by the heating power coefficient to obtain the heating power of the second heating region 35.
Fig. 8 is a schematic structural diagram of a semiconductor processing apparatus according to an embodiment of the present invention, and with reference to fig. 5 and 8, the semiconductor processing apparatus includes: the device comprises a process chamber 1 and a pedestal 3 arranged in the process chamber 1, wherein the pedestal 3 is used for bearing a wafer 2. The susceptor 3 comprises a first heating zone 34 and at least one second heating zone 35, the first heating zone 34 and each second heating zone 35 being capable of being heated independently. The semiconductor processing apparatus further comprises the above-mentioned susceptor heating device, which is connected to the susceptor for adjusting the heating power of the first heating region 34 and each of the second heating regions 35 of the susceptor.
As shown in fig. 5, the susceptor includes two second heating zones 35, a first heating zone 34 surrounding one of the second heating zones 35a, and the other second heating zone 35 surrounding the first heating zone 34.
In addition, as shown in FIG. 8, the semiconductor processing apparatus further includes air intake pipes 5 and 6, switching valves G1-1, G1-2, G1-3 provided on the pipe 6, and a gas pressure control device 7. When the wafer 2 on the base 3 is heated, the method comprises the following steps:
s310, opening the switch valve G1-3 and the switch valve G1-2, and blowing the process gas into the chamber 1 through the pipe 5.
And S320, maintaining the pressure in the chamber at A, and vacuumizing the space between the base and the wafer through a pump (pump).
S330, closing the switch valve G1-2, opening the switch valve G1-1, blowing a heat-conducting gas (such as helium) into a pipeline among the switch valve G1-1, the switch valve G1-2 and the switch valve G1-3 through a pipeline 6, wherein the pressure of the heat-conducting gas is controlled to be B through a gas pressure control device 7, and B is less than A.
S330, opening the switch valve G1-2, and blowing the heat-conducting gas between the susceptor 3 and the wafer 2.
It is to be understood that the above embodiments are merely exemplary embodiments adopted to illustrate the principles of the embodiments of the present invention, and the embodiments of the present invention are not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the embodiments of the invention, and these modifications and improvements are also considered to be within the scope of the embodiments of the invention.
Claims (9)
1. A susceptor heating method, the susceptor comprising a first heating zone and at least one second heating zone, the first heating zone and each of the second heating zones being for zone heating; the method for heating the base is characterized by comprising the following steps:
acquiring the current heating power of the first heating area and the current temperature of the second heating area;
judging whether the current temperature of the second heating area meets a preset condition or not; the preset conditions are as follows: the current temperature of the second heating zone is greater than a preset temperature and less than an overshoot temperature, wherein the preset temperature is less than a target temperature, and the overshoot temperature is greater than the target temperature;
when the current temperature of the second heating area meets a preset condition, adjusting the heating power of the second heating area according to the target temperature, the current temperature of the second heating area and the current heating power of the first heating area, so that the temperature difference between the second heating area and the first heating area is reduced; wherein the adjusting the heating power of the second heating area according to the target temperature, the current temperature of the second heating area and the current heating power of the first heating area comprises: determining a heating power coefficient of the second heating area according to the target temperature, the preset temperature, the current temperature of the second heating area, the rated heating power of the second heating area and the rated heating power of the first heating area; determining the heating power of the second heating area according to the current heating power of the first heating area and the heating power coefficient;
and when the current temperature of the second heating area does not meet the preset condition, adjusting the heating power of the second heating area according to a preset rule.
2. The susceptor heating method according to claim 1, wherein when the current temperature of the second heating region does not satisfy a preset condition, the susceptor heating method further comprises:
judging whether the current temperature of the second heating area is less than or equal to the preset temperature or not;
the preset rules include:
and when the current temperature of the second heating area is less than or equal to the preset temperature, adjusting the heating power of the second heating area to the maximum value.
3. The susceptor heating method according to claim 1, wherein when the current temperature of the second heating region does not satisfy a preset condition, the susceptor heating method further comprises: judging whether the current temperature of the second heating area is greater than or equal to the overshoot temperature;
the preset rules include:
stopping heating the second heating zone when the current temperature of the second heating zone is greater than or equal to the overshoot temperature.
4. The susceptor heating method of claim 1, wherein a heating power coefficient of the second heating zone is determined according to the following formula:
X＝K(N-U)*W2/(L*(W2+W1))；
wherein X is the heating power coefficient, K is a coefficient set according to the target temperature, N is the preset temperature, U is the current temperature of the second heating area, and W is1Rated heating power, W, of the first heating zone2Is the amount of the second heating zoneAnd (4) determining the heating power, wherein L is the target temperature.
5. The susceptor heating method according to any one of claims 1 to 4, further comprising:
acquiring the current temperature of the first heating area;
and controlling the heating power of the first heating area according to the difference between the current temperature of the first heating area and the target temperature, so that the temperature of the first heating area is consistent with the target temperature.
6. A susceptor heating apparatus, the susceptor comprising a first heating zone and at least one second heating zone; characterized in that the base heating device comprises: the device comprises a detection module, a processor and a power controller;
the detection module is used for acquiring the current heating power of the first heating area and the current temperature of the second heating area;
the processor comprises a judging module and a calculating module;
the judging module is connected with the detecting module and used for judging whether the current temperature of the second heating area meets a preset condition or not; the preset conditions are as follows: the current temperature of the second heating zone is greater than a preset temperature and less than an overshoot temperature, wherein the preset temperature is less than a target temperature, and the overshoot temperature is greater than the target temperature;
the calculating module is connected with the judging module and is used for calculating the heating power of the second heating area according to the target temperature, the current temperature of the second heating area and the current heating power of the first heating area when the current temperature of the second heating area meets the preset condition;
the calculation module comprises:
the first calculation unit is used for determining a heating power coefficient of the second heating area according to the target temperature, the preset temperature, the current temperature of the second heating area, the rated heating power of the second heating area and the rated heating power of the first heating area;
the second calculation unit is connected with the first calculation unit and used for determining and obtaining the heating power of the second heating area according to the current heating power of the first heating area and the heating power coefficient;
the power controller is connected with the processor and used for adjusting the heating power of the second heating area according to the calculation result of the calculation module so as to reduce the temperature difference between the second heating area and the first heating area;
the power controller is further used for adjusting the heating power of the second heating area according to a preset rule when the current temperature of the second heating area does not meet a preset condition.
7. The susceptor heating apparatus of claim 6, wherein the determining module is further configured to determine whether the temperature of the second heating region is less than or equal to a preset temperature when the current temperature of the second heating region does not satisfy a preset condition;
the preset rules include: and when the current temperature of the second heating area is less than or equal to the preset temperature, adjusting the heating power of the second heating area to the maximum value.
8. The susceptor heating apparatus of claim 6, wherein the determining module is further configured to determine whether the current temperature of the second heating region is greater than or equal to the overshoot temperature when the current temperature of the second heating region does not satisfy a preset condition;
the preset rules include: when the current temperature of the second heating area is greater than or equal to the overshoot temperature, adjusting the heating power of the second heating area to zero.
9. The susceptor heating apparatus of claim 6, wherein the second calculation unit is configured to determine a heating power coefficient of the second heating region according to the following formula:
X＝K(N-U)*W2/(L*(W2+W1))；
wherein X is the heating power coefficient, K is a coefficient set according to the target temperature, N is the preset temperature, U is the current temperature of the second heating area, and W is1Rated heating power, W, of the first heating zone2And the rated heating power of the second heating area is L, and the target temperature is L.
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| CN111415887A (en) * | 2020-03-27 | 2020-07-14 | 宁波润华全芯微电子设备有限公司 | Wafer heating device |
| CN112490148B (en) * | 2020-11-13 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Heating device, heating method and semiconductor process equipment |
| CN113494331A (en) * | 2021-07-15 | 2021-10-12 | 昆明理工大学 | Multi-module automatic temperature control oil sump preheating device |
| CN113699509B (en) * | 2021-10-27 | 2022-02-01 | 苏州长光华芯光电技术股份有限公司 | Semiconductor growth equipment and working method thereof |
| CN114253313B (en) * | 2021-11-29 | 2023-03-14 | 西安北方华创微电子装备有限公司 | Chamber temperature control method and device |
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