CN103526190A - Device for controlling light-emitting wavelength and uniformity of epitaxial wafers in MOCVD (Metal Organic Chemical Vapor Deposition) system and method thereof - Google Patents
Device for controlling light-emitting wavelength and uniformity of epitaxial wafers in MOCVD (Metal Organic Chemical Vapor Deposition) system and method thereof Download PDFInfo
- Publication number
- CN103526190A CN103526190A CN201310477602.1A CN201310477602A CN103526190A CN 103526190 A CN103526190 A CN 103526190A CN 201310477602 A CN201310477602 A CN 201310477602A CN 103526190 A CN103526190 A CN 103526190A
- Authority
- CN
- China
- Prior art keywords
- epitaxial wafer
- emission wavelength
- temperature
- epitaxial
- pallet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses a device for controlling light-emitting wavelength and uniformity of epitaxial wafers in an MOCVD (Metal Organic Chemical Vapor Deposition) system. The device comprises a tray, a group of non-contact light emission compensation laser test light-emitting wavelength spectrometers, and a heater, wherein a plurality of epitaxial wafers are correspondingly placed on the tray through a plurality of concave plates which are arranged on the upper surface; the group of non-contact light emission compensation laser test light-emitting wavelength spectrometers are arranged above a top cover; the heater is arranged under the tray; the tray is provided with a plurality of concentric-circle annular areas with incremental semi-diameters along the radial direction; the plurality of epitaxial wafers are distributed and arranged in the plurality of annular areas; the group of non-contact light emission compensation laser test light-emitting wavelength spectrometers are arranged above the tray along the radial direction; each or a plurality of adjacent non-contact light emission compensation laser test light-emitting wavelength spectrometers correspondingly monitor the light-emitting wavelength of at least one or more epitaxial wafers in the same annular area of the tray; the heater comprises a group of heating elements which are arranged concentrically and annularly and provided with independent power input; each or a plurality of adjacent heating elements correspondingly heat the plurality of epitaxial wafers arranged in the same annular area of the tray by heating the tray.
Description
Technical field
The present invention relates to a kind of MOCVD for the production of compound semiconductor light electrical part (metal organic chemical vapor deposition) system and control method thereof, particularly wherein for controlling epitaxial wafer emission wavelength and inhomogeneity apparatus and method.
Background technology
Metal organic chemical vapor deposition system (hereinafter to be referred as MOCVD) is by deposition one deck or lasting deposit multilayer extension crystalline network film, to form as the process of the semiconducter device such as photodiode (LED) on epitaxial wafer.Described device is as performance and the good article rate of the normal distribution of wavelength (color), brightness and forward voltage, and the homogeneity being directly comprised of epitaxial wafer (or claiming substrate base) quality, thickness and the material of upper each layer of epitaxial film determines; And the homogeneity of this epitaxial film, again by evenly mixed and the distribution direct correlation of reactant gases on the temperature homogeneity of epitaxial wafer and epitaxial wafer surface.For example, when the luminous lattice film of extension key, as the temperature difference of epitaxial wafer is greater than 3 ℃, the good article rate of this device just may reduce 15%-20%.
In addition, for improving the production capacity of system, reduce the production cost of substrate extension, in MOCVD reaction chamber, carry out epitaxially grown epitaxial wafer quantity in continuous increase simultaneously, be wherein no lack of large-sized epitaxial wafer.Therefore, when extension lattice film, how to control between epitaxial wafer, and the homogeneity of emission wavelength on single large size epitaxial wafer, for obtaining, high-quality extension is thin
Film and raising device good article rate are most important.
Control temperature and the homogeneity of epitaxial wafer when metal organic chemical vapor deposition extension lattice film, first, need its well heater directly or by placing the pallet of epitaxial wafer, in same epitaxy technique temperature or at different epitaxy technique temperature, can heat uniformly epitaxial wafer.
This requirement is particularly important during as the lattice film of light emitting diode (LED) to extension, its multilayer film have all continued in same reaction chamber, and several layer films of its key are very high to the uniformity requirement of temperature, and between different epitaxy techniques, temperature differs greatly.For example, the epitaxy technique temperature of luminescent layer film is 700 ℃-900 ℃, and P-knot film is 900 ℃-1050 ℃, and N-knot film is 1020 ℃-1050 ℃.
Under the epitaxy technique temperature condition different, thermal equilibrium condition in epitaxial reaction chamber is different, each epitaxial wafer, especially be placed on pallet Different Diameter to locational epitaxial wafer, the heat of its reception and the heat of loss have very big-difference, therefore, epitaxial wafer well heater must have the controllability of very large homogeneous heating.
In extension technological process, need to measure the temperature of epitaxial wafer, the homogeneity of single epitaxial wafer temperature, and the temperature homogeneity between epitaxial wafer, the measuring method of this temperature not only needs accurately and fast, and measured data can be controlled temperature and homogeneity, the especially epitaxial wafer of epitaxial wafer and the temperature homogeneity between epitaxial wafer effectively, in time by temperature-control device.
The device of described measurement epitaxial wafer emission wavelength and the inhomogeneity device of adjusting epitaxial wafer, with temperature-control device collaborative work, temperature and the designed function of epitaxial wafer well heater of the feedback data of generally measuring according to epitaxial wafer emission wavelength, the emission wavelength of epitaxial wafer technique initialization, epitaxy technique regulation, the power in each region of control heater, to realize emission wavelength, temperature and the inhomogeneity control to epitaxial wafer.
And emission wavelength and the homogeneity of controlling epitaxial wafer have two crucial performance index, accuracy and stability.Wherein, accuracy refers to controlled actual emission wavelength and the levels of precision of regulation emission wavelength; Stability refers to that controlled actual emission wavelength reaches the time of regulation emission wavelength scope and the intensity of variation of actual temperature in whole control process.Therefore, accuracy and stability that epitaxial wafer emission wavelength and homogeneity are controlled, determined by epitaxial wafer temperature control feedback system, the function of well heater, the control method of the measuring method of temperature and temperature.
Summary of the invention
The object of this invention is to provide a kind of when metal organic chemical vapor deposition (MOCVD) extension lattice film, control epitaxial wafer emission wavelength and inhomogeneity apparatus and method, can be when lasting extension different crystalline lattice film, very in large-temperature range, effectively control temperature and the homogeneity of single epitaxial wafer, and can effectively control temperature and the homogeneity between epitaxial wafer.
The invention provides 1. 1 kinds and control epitaxial wafer emission wavelength and inhomogeneity device thereof for MOCVD system, comprise the corresponding pallet that is placed with some epitaxial wafers of the some recessed dish arranging by upper surface, be arranged on that a group of top cover top is contactless, the laser testing emission wavelength spectrometer of luminous compensation, and the well heater that is arranged on pallet below, wherein:
Described pallet is disposed radially some concentric(al) circless but annular section that radius increases progressively, and described some epitaxial wafers are arranged evenly in these some annular sections;
Described one group of non-contact optical test epitaxial wafer emission wavelength tester is radially arranged in described pallet top, each or adjacent some non-contact optical epitaxial wafer emission wavelength testers, the emission wavelength of at least one or more epitaxial wafer on the described pallet of corresponding monitoring in same annular section;
Described well heater comprises one group of circular permutation that concentric(al) circles arranges, a plurality of heating units of independent power input, each or adjacent described in several heating unit by heated tray, on corresponding heated tray, be arranged in the some epitaxial wafers on same annular section.
The present invention also provides a kind of and controls epitaxial wafer emission wavelength and inhomogeneity method for MOCVD system, comprises following steps:
Step 1: in the one group of non-contact optical epitaxial wafer emission wavelength tester radially arranging one or adjacent several, correspondingly measure on pallet the emission wavelength of a plurality of epitaxial wafers in same annular section, and feed back to temperature regulator and carry out statistical treatment;
Step 2: by temperature regulator according to the emission wavelength of epitaxial wafer and the difference of actual emission wavelength set, and according to the relation of epitaxial wafer emission wavelength and temperature, the design temperature of Tc controller, driving power take-off equipment independently changes the power of each heating unit;
Step 3: each or the adjacent heating unit that several can independently be controlled pass through heated tray, the epitaxial wafer that correspondence is placed in the annular section of top reaches the temperature setting, and obtain desired temperature homogeneity, to reach good consistent wavelength and homogeneity.
The invention has the beneficial effects as follows: the present invention, by the one group of noncontact radially arranging, luminous compensate for optical emission wavelength tester, directly measures the temperature of epitaxial wafer as the feedback signal of the power change of respective regions heating unit.The heater temperature of also directly measuring by contact thermocouple thermometer, usings and monitors whether well heater works and as the reference point of epitaxy technique specified temperature, guarantee thermometric accuracy.For large-sized epitaxial wafer, also can make the different radial positions of one group of a plurality of epitaxial wafer in the same annular section of pallet, corresponding adjacent a plurality of non-contact optical epitaxial wafer emission wavelength testers, guarantee that each epitaxial wafer is measured accurate respectively.
Temperature regulator of the present invention take that regional is surveyed the statistical average value of epitaxial wafer temperature and the difference minimum of epitaxy technique specified temperature is target, according to the temperature of different epitaxy technique regulations, in temperature controlled method, at least be provided with the temperature parameter that pallet and epitaxial wafer heat run off, or the temperature parameter of each region heating unit output rating, the parameter that affects with the power regulation of each region heating unit on other region epitaxial wafer temperature, by the requirement of epitaxial wafer temperature and inhomogeneity control accuracy and stability, determine the power stage of each region heating unit.
Accompanying drawing explanation
For further illustrating concrete technology contents of the present invention, below in conjunction with embodiment and accompanying drawing, be described in detail as follows, wherein:
Fig. 1 is structural representation of the present invention.
Embodiment
Refer to shown in Fig. 1, the present invention is a kind of controls epitaxial wafer emission wavelength and inhomogeneity device for MOCVD system, comprise the corresponding pallet 20 that is placed with some epitaxial wafers 21 of the some recessed dish arranging by upper surface, be arranged on that a group of top cover top is contactless, the laser testing emission wavelength spectrometer 10 of luminous compensation, and the well heater 12 that is arranged on pallet 20 belows, described pallet 20 is disposed radially some concentric(al) circless but annular section that radius increases progressively, and described some epitaxial wafers 21 are arranged evenly in these some annular sections; Described one group of non-contact optical test epitaxial wafer emission wavelength tester 10 is radially arranged in described pallet 20 tops, each or adjacent some non-contact optical epitaxial wafer emission wavelength testers 10, the emission wavelength of at least one or more epitaxial wafer 21 on the described pallet 20 of corresponding monitoring in same annular section.The heating unit 121,122,123 of one group of circular permutation that described well heater 12 comprises concentric(al) circles setting, independent power input, each or adjacent described in several heating unit 12 by heated tray 20, on main corresponding heated tray 20, be arranged in the some epitaxial wafers 21 on same annular section.
The present invention also comprises the temperature regulator 11 being connected with described some non-contact optical epitaxial wafer emission wavelength testers 10; Described some non-contact optical epitaxial wafer emission wavelength testers 10 feed back to the emission wavelength of the epitaxial wafer recording 21 respectively described temperature regulator 11.
The present invention also comprises the some power output devices that are connected and are subject to its control with described temperature regulator 11; Described some power output devices respectively with the corresponding connection of described several heating units 12, by independently regulating the power of each heating unit 121,122,123, realize affecting the control of the temperature of epitaxial wafer 21 emission wavelengths.
While placing some epitaxial wafers 21 of two inches and above size on wherein said pallet 20, some epitaxial wafers 21 in same annular section, top is by the emission wavelength of the 10 monitoring epitaxial wafers of non-contact optical epitaxial wafer emission wavelength tester described at least one, and the described heating unit 12 that below is mainly independently controlled by least one heats.
While placing two inches or above some epitaxial wafers 21 on wherein said pallet 20, some epitaxial wafers in same annular section, top is by the emission wavelength of at least two described non-contact optical epitaxial wafer emission wavelength tester 11 monitoring epitaxial wafers, and below is mainly by least two the independent described heating unit of controlling 12 heating.
On the well heater 12 of wherein said pallet 20 belows, be provided with at least one contact thermocouple thermometer, it directly measured to the temperature of the described well heater obtaining, as the monitoring point of well heater 12 working ordeies and the reference point of epitaxial wafer 21 emission wavelengths.
Wherein also comprise swivel arrangement; Described pallet 20 bottoms are provided with central shaft 13, and it is passed down through described well heater 12, are connected with described swivel arrangement, by swivel arrangement, drive pallet 20 rotations.
It consults Fig. 1 again, and the present invention is a kind of controls epitaxial wafer emission wavelength and inhomogeneity method thereof for MOCVD system, comprises following steps:
Step 1, in the one group of non-contact optical epitaxial wafer emission wavelength tester 10 radially arranging one or adjacent several, corresponding measure on pallet 20 emission wavelength of a plurality of epitaxial wafers 21 in same annular section, and feed back to temperature regulator 11 and carry out statistical treatment;
Step 2, by temperature regulator 11 according to the emission wavelength of epitaxial wafer and the difference of actual emission wavelength set, and according to the relation of epitaxial wafer emission wavelength and temperature, the design temperature of Tc controller 11, driving power take-off equipment independently changes the power of each heating unit 121,122,123:
Step 3, each or the adjacent heating unit that several can independently be controlled 121,122,123 are by heated tray 20, the epitaxial wafer 21 that correspondence is placed in the annular section of top reaches the temperature setting, and obtain desired temperature homogeneity, to reach good consistent wavelength and homogeneity.
For MOCVD system, control epitaxial wafer wavelength and inhomogeneity device thereof as claimed in claim 8, it is characterized in that, in described temperature regulator 11, demarcate the primary data of setting up, comprise: the temperature parameter that described pallet 20 and epitaxial wafer 21 heats run off; The temperature factor of the output rating of the described heating unit 121,122,123 of corresponding each annular section, and the affect parameter of power regulation on other annular section epitaxial wafer 21 temperature; And the temperature of the thermometric well heater 12 of described contact thermocouple, the Relation Parameters of epitaxial wafer 21 temperature that record with described non-contact optical epitaxial wafer emission wavelength tester 10.
Wherein said temperature regulator 11 records described non-contact optical epitaxial wafer emission wavelength tester 10 respectively, and the epitaxial wafer emission wavelength feedback data of same epitaxial wafer 21 or a plurality of epitaxial wafers, calculates statistical average value; Afterwards, described temperature regulator 11 is compared described statistical average value respectively with the temperature of epitaxy technique regulation, according to the temperature contrast of some epitaxial wafers 21 on each annular section obtaining; The described temperature contrast minimum of take is target, and temperature regulator 11 driving power take-off equipments change the output rating of each heating unit 121,122,123, realizes the temperature between single epitaxial wafer 21 and adjacent epitaxial wafer and inhomogeneity control on pallet 20.
Embodiment
Consult Fig. 1, described in the present embodiment, control epitaxial wafer 201 emission wavelengths and inhomogeneity device, be particularly useful for 2 inches diameter or above reduced size epitaxial wafer.Take 2 inches as example, coordinate shown in Figure 1, this device comprises the round tray 20 that a upper surface offers some recessed dishes, the corresponding epitaxial wafer 21 of placing 2 inches in these some recessed dishes, make it at pallet 20 upper surface concentrics but arranged evenly in three annular sections that radius increases progressively, thereby can carry out to a plurality of epitaxial wafers 21 of placing on a pallet 20 simultaneously the MOCVD coating film treatment of multilayer epitaxial crystalline network film.
Coordinate shown in Figure 1, these pallet 20 belows are provided with well heater 12, the resistive heating elements 121,122,123 of 3 ring-types that comprise concentric setting, each ring-type heating unit, by heated tray 20, is arranged in a plurality of epitaxial wafers 21 on same annular section on corresponding heated tray 20.
The optics epitaxial wafer wavelength measurement meter 101,102,103 of one group of 3 luminous compensation of noncontact, be disposed radially above pallet 20, detect respectively the optical radiation of a plurality of epitaxial wafers 21 in above-mentioned same annular section, and epitaxial wafer 21 emission wavelengths that correspondence is measured, jointly feed back to a temperature, emission wavelength controller 11.
This temperature, emission wavelength controller 11 are also by being connected with 3 independent power output devices that arrange, according to the epitaxy technique emission wavelength of setting and the difference of actual emission wavelength, adjust the power of the heating unit 121,122,123 of controlling above-mentioned 3 resistance-types, and then independently control epitaxial wafer 21 temperature in 3 annular sections on pallet 20, realize homogeneity and the consistence of the emission wavelength of epitaxial wafer 21 on pallet 20.
For fear of reactant gases, on non-contact optical epitaxial wafer emission wavelength tester 10, deposit the temperature survey deviation causing, also on the well heater below pallet 20, be provided with the temperature of Long-haired the direct HEATER FOR MEASURING 12 of contact thermocouple thermometer, as a temperature controlled reference point.
Described pallet 20 bottoms are provided with central shaft 13, and it is passed down through described well heater 12, are connected with swivel arrangement, by swivel arrangement, drive pallet 20 rotations, further improve the homogeneity of heating.
Said apparatus, for the method for epitaxial wafer 21 emission wavelengths and homogeneity control, comprises:
Step 1, by the one group of non-contact optical epitaxial wafer emission wavelength tester 10 radially arranging, corresponding measure on pallet 20 emission wavelength of a plurality of epitaxial wafers 21 in same annular section, and feed back to temperature regulator 11 and carry out statistical treatment;
Step 2, by temperature regulator 11 according to the difference of the emission wavelength of the epitaxy technique emission wavelength of setting and actual measurement, driving power take-off equipment independently changes the power that is input to each heating unit 121,122,123;
Step 3, the heating unit 121,122,123 that each is independently controlled pass through heated tray 20, and the epitaxial wafer 21 that correspondence is placed in the annular section of top reaches the temperature setting, and obtains desired temperature homogeneity.
Wherein, during temperature survey, also need to consider various factors: during pallet 20 rotation, top non-contact optical epitaxial wafer emission wavelength tester 10 obtains the emission wavelength of the epitaxial wafer 21 on same arrangement radius, when emission wavelength sample frequency is identical, sampling point near each epitaxial wafer 21 on the annular section in pallet 20 centers of circle is many, sampling point away from each epitaxial wafer on the annular section in the center of circle is few, and this difference can reach several times.In addition, emission wavelength sampling during pallet 20 rotation, the emission wavelength recording may be on epitaxial wafer 21, may be on pallet 20, may be also pallet 20 and epitaxial wafer 21 intersections.Emission wavelength sample frequency need to be mated with the rotating speed of pallet 20, and when sample frequency becomes very high with pallet 20 rotating speeds, temperature regulator 11 need to have enough data-handling capacities, provides real-time epitaxial wafer emission wavelength, Temperature Feedback to control.
When initial, in temperature regulator 11, by demarcations, directly well heater 12 temperature of measurement of at least one contact thermocouple thermometer have been set up, the relation of epitaxial wafer 21 temperature that measure with non-contact optical epitaxial wafer emission wavelength tester 10.Be in operation, when epitaxial wafer emission wavelength is measured generation skew, can correct with this observed temperature, guarantee thermometric accuracy.
Afterwards, temperature regulator 11 is compared statistical average value respectively with the emission wavelength of epitaxy technique regulation, and according to the difference of the emission wavelength of each the annular section epitaxial wafer 21 obtaining, take this wavelength difference minimum is target, determine the output rating that each heating unit 30 is required, realize the temperature between single epitaxial wafer 21 and adjacent epitaxial wafer and inhomogeneity control.
Above-described system chart and implementing circuit figure; to object of the present invention; technical scheme and beneficial effect further describe; institute is understood that; the foregoing is only specific embodiments of the invention, be not limited to the present invention, within the spirit and principles in the present invention all; any modification of making, be equal to replacement, improvement etc., within protection scope of the present invention all should be included in.
Claims (10)
1. for MOCVD system, control epitaxial wafer emission wavelength and inhomogeneity device thereof for one kind, comprise the corresponding pallet that is placed with some epitaxial wafers of the some recessed dish arranging by upper surface, be arranged on that a group of top cover top is contactless, the laser testing emission wavelength spectrometer of luminous compensation, and the well heater that is arranged on pallet below, wherein:
Described pallet is disposed radially some concentric(al) circless but annular section that radius increases progressively, and described some epitaxial wafers are arranged evenly in these some annular sections;
Described one group of non-contact optical test epitaxial wafer emission wavelength tester is radially arranged in described pallet top, each or adjacent some non-contact optical epitaxial wafer emission wavelength testers, the emission wavelength of at least one or more epitaxial wafer on the described pallet of corresponding monitoring in same annular section;
Described well heater comprises one group of circular permutation that concentric(al) circles arranges, a plurality of heating units of independent power input, each or adjacent described in several heating unit by heated tray, on corresponding heated tray, be arranged in the some epitaxial wafers on same annular section.
2. as claimed in claim 1ly for MOCVD system, control epitaxial wafer emission wavelength and inhomogeneity device, wherein also comprise the temperature regulator being connected with described some non-contact optical epitaxial wafer emission wavelength testers; Described some non-contact optical epitaxial wafer emission wavelength testers feed back to described temperature regulator by the emission wavelength of the epitaxial wafer recording respectively.
3. as claimed in claim 1ly for MOCVD system, control epitaxial wafer emission wavelength and inhomogeneity device, wherein also comprise the some power output devices that are connected and are subject to its control with described temperature regulator; Described some power output devices respectively with the corresponding connection of described several heating units, by independently regulating the power of each heating unit, realize affecting the control of the temperature of epitaxial wafer emission wavelength.
As claimed in claim 1 use in MOCVD system, control epitaxial wafer emission wavelength and inhomogeneity device, while placing some epitaxial wafers of two inches and above size on wherein said pallet, some epitaxial wafers in same annular section, top is by the emission wavelength of non-contact optical epitaxial wafer emission wavelength tester monitoring epitaxial wafer described at least one, and the described heating unit that below is mainly independently controlled by least one heats.
5. as claimed in claim 4ly for MOCVD system, control epitaxial wafer emission wavelength and inhomogeneity device, while placing two inches or above some epitaxial wafers on wherein said pallet, some epitaxial wafers in same annular section, top is by the emission wavelength of at least two described non-contact optical epitaxial wafer emission wavelength tester monitoring epitaxial wafers, and below is mainly heated by least two independent described heating units of controlling.
6. as claimed in claim 5ly for MOCVD system, control epitaxial wafer emission wavelength and inhomogeneity device, on the well heater of wherein said pallet below, be provided with at least one contact thermocouple thermometer, it is directly measured to the temperature of the described well heater obtaining, as the monitoring point of well heater working order and the reference point of epitaxial wafer emission wavelength.
7. as claimed in claim 1ly for MOCVD system, control epitaxial wafer emission wavelength and inhomogeneity device, wherein also comprise swivel arrangement; Described tray bottom is provided with central shaft, and it is passed down through described well heater, is connected with described swivel arrangement, by swivel arrangement, drives pallet to rotate.
8. for MOCVD system, control epitaxial wafer emission wavelength and an inhomogeneity method, the method is the device that is applied to claim 1, comprises following steps:
Step 1: in the one group of non-contact optical epitaxial wafer emission wavelength tester radially arranging one or adjacent several, correspondingly measure on pallet the emission wavelength of a plurality of epitaxial wafers in same annular section, and feed back to temperature regulator and carry out statistical treatment;
Step 2: by temperature regulator according to the emission wavelength of epitaxial wafer and the difference of actual emission wavelength set, and according to the relation of epitaxial wafer emission wavelength and temperature, the design temperature of Tc controller, driving power take-off equipment independently changes the power of each heating unit;
Step 3: each or the adjacent heating unit that several can independently be controlled pass through heated tray, the epitaxial wafer that correspondence is placed in the annular section of top reaches the temperature setting, and obtain desired temperature homogeneity, to reach good consistent wavelength and homogeneity.
9. as claimed in claim 8ly for MOCVD system, control epitaxial wafer wavelength and inhomogeneity method, in wherein said temperature regulator, demarcate the primary data of setting up, comprise: the temperature parameter that described pallet and epitaxial wafer heat run off; The temperature factor of the output rating of the described heating unit of corresponding each annular section, and the affect parameter of power regulation on other annular section epitaxial wafer temperature; And the temperature of the thermometric well heater of described contact thermocouple, the Relation Parameters of the epitaxial wafer temperature recording with described non-contact optical epitaxial wafer emission wavelength tester.
10. as claimed in claim 9ly for MOCVD system, control epitaxial wafer temperature and inhomogeneity method, wherein said temperature regulator records described non-contact optical epitaxial wafer emission wavelength tester respectively, the epitaxial wafer emission wavelength feedback data of same epitaxial wafer or a plurality of epitaxial wafers, calculates statistical average value; Afterwards, described temperature regulator is compared described statistical average value respectively with the temperature of epitaxy technique regulation, according to the temperature contrast of some epitaxial wafers on each annular section obtaining; The described temperature contrast minimum of take is target, and temperature regulator driving power take-off equipment changes the output rating of each heating unit, realizes the temperature between single epitaxial wafer on pallet and adjacent epitaxial wafer and inhomogeneity control.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310477602.1A CN103526190A (en) | 2013-10-14 | 2013-10-14 | Device for controlling light-emitting wavelength and uniformity of epitaxial wafers in MOCVD (Metal Organic Chemical Vapor Deposition) system and method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310477602.1A CN103526190A (en) | 2013-10-14 | 2013-10-14 | Device for controlling light-emitting wavelength and uniformity of epitaxial wafers in MOCVD (Metal Organic Chemical Vapor Deposition) system and method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103526190A true CN103526190A (en) | 2014-01-22 |
Family
ID=49928524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310477602.1A Pending CN103526190A (en) | 2013-10-14 | 2013-10-14 | Device for controlling light-emitting wavelength and uniformity of epitaxial wafers in MOCVD (Metal Organic Chemical Vapor Deposition) system and method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103526190A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103938269A (en) * | 2014-04-28 | 2014-07-23 | 上海华力微电子有限公司 | Chamber temperature calibrating method of epitaxial technique |
| CN110565074A (en) * | 2019-09-17 | 2019-12-13 | 北京北方华创微电子装备有限公司 | Susceptor heating method and susceptor heating apparatus |
| CN110656322A (en) * | 2019-09-11 | 2020-01-07 | 厦门三安光电有限公司 | Method, device and equipment for continuously growing epitaxial wafer and storage medium |
| CN114486181A (en) * | 2020-11-13 | 2022-05-13 | 深圳中科飞测科技股份有限公司 | Test adjusting piece of semiconductor detection device and test adjusting method of semiconductor detection device |
| CN115287634A (en) * | 2022-08-18 | 2022-11-04 | 江西兆驰半导体有限公司 | Epitaxial wavelength yield improvement method and system, readable storage medium and computer |
| CN115838965A (en) * | 2023-02-21 | 2023-03-24 | 新磊半导体科技(苏州)股份有限公司 | Process optimization method for growing HEMT epitaxial wafer by molecular beam epitaxy |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101906622A (en) * | 2010-08-20 | 2010-12-08 | 华晟光电设备(香港)有限公司 | Device and method for controlling temperature and uniformity of epitaxial wafers in MOCVD system |
| JP2012084660A (en) * | 2010-10-08 | 2012-04-26 | Dowa Electronics Materials Co Ltd | Epitaxial growth method and epitaxial wafer |
| CN102778295A (en) * | 2012-08-21 | 2012-11-14 | 南昌黄绿照明有限公司 | Spectrum device for measuring LED (light-emitting diode) epitaxial wafer photoluminescence on line |
-
2013
- 2013-10-14 CN CN201310477602.1A patent/CN103526190A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101906622A (en) * | 2010-08-20 | 2010-12-08 | 华晟光电设备(香港)有限公司 | Device and method for controlling temperature and uniformity of epitaxial wafers in MOCVD system |
| JP2012084660A (en) * | 2010-10-08 | 2012-04-26 | Dowa Electronics Materials Co Ltd | Epitaxial growth method and epitaxial wafer |
| CN102778295A (en) * | 2012-08-21 | 2012-11-14 | 南昌黄绿照明有限公司 | Spectrum device for measuring LED (light-emitting diode) epitaxial wafer photoluminescence on line |
Non-Patent Citations (1)
| Title |
|---|
| 冉军学等: "GaN MOCVD控制系统设计与研制", 《第十一界全国MOCVD学术会议论文集》 * |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103938269A (en) * | 2014-04-28 | 2014-07-23 | 上海华力微电子有限公司 | Chamber temperature calibrating method of epitaxial technique |
| CN110656322A (en) * | 2019-09-11 | 2020-01-07 | 厦门三安光电有限公司 | Method, device and equipment for continuously growing epitaxial wafer and storage medium |
| CN110565074A (en) * | 2019-09-17 | 2019-12-13 | 北京北方华创微电子装备有限公司 | Susceptor heating method and susceptor heating apparatus |
| CN110565074B (en) * | 2019-09-17 | 2021-10-15 | 北京北方华创微电子装备有限公司 | Susceptor heating method and susceptor heating apparatus |
| CN114486181A (en) * | 2020-11-13 | 2022-05-13 | 深圳中科飞测科技股份有限公司 | Test adjusting piece of semiconductor detection device and test adjusting method of semiconductor detection device |
| CN114486181B (en) * | 2020-11-13 | 2024-03-01 | 深圳中科飞测科技股份有限公司 | Test piece of semiconductor detection equipment and debugging method of semiconductor detection equipment |
| CN115287634A (en) * | 2022-08-18 | 2022-11-04 | 江西兆驰半导体有限公司 | Epitaxial wavelength yield improvement method and system, readable storage medium and computer |
| CN115287634B (en) * | 2022-08-18 | 2024-02-23 | 江西兆驰半导体有限公司 | Epitaxial wavelength yield improvement method, system, readable storage medium and computer |
| CN115838965A (en) * | 2023-02-21 | 2023-03-24 | 新磊半导体科技(苏州)股份有限公司 | Process optimization method for growing HEMT epitaxial wafer by molecular beam epitaxy |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101906622B (en) | Device and method for controlling temperature and uniformity of epitaxial wafers in MOCVD system | |
| CN103526190A (en) | Device for controlling light-emitting wavelength and uniformity of epitaxial wafers in MOCVD (Metal Organic Chemical Vapor Deposition) system and method thereof | |
| US6492625B1 (en) | Apparatus and method for controlling temperature uniformity of substrates | |
| US9677944B2 (en) | Temperature control for GaN based materials | |
| US10281215B2 (en) | Apparatus and method for controlling heating of base within chemical vapour deposition chamber | |
| US8888360B2 (en) | Methods and systems for in-situ pyrometer calibration | |
| TWI571528B (en) | And a method and apparatus for controlling the surface temperature of the base body of the substrate coating apparatus | |
| KR20120062900A (en) | Metal organic chemical vapor deposition device and temperature control method therefor | |
| TW201529884A (en) | Apparatus and method for regulating the temperature in a process chamber of a cvd reactor using two temperature sensor devices | |
| JP2022542093A (en) | IN SITU Real Time Sensing and Compensation of Non-Uniformity in Substrate Processing Systems | |
| US20160355947A1 (en) | Susceptor Heating For Epitaxial Growth Process | |
| CN103668128A (en) | MOCVD (metal organic chemical vapor deposition) equipment, temperature control system and control method | |
| CN108400099B (en) | Device and method for measuring longitudinal temperature field of film in nitride epitaxial growth process | |
| CN105470155B (en) | The measurement method of epitaxial apparatus and epitaxial process epitaxial layers | |
| JP6272743B2 (en) | Substrate processing equipment | |
| CN208151478U (en) | A kind of temperature control system and film deposition equipment | |
| CN103422074A (en) | Reaction chamber for sedimentation technology and regulating method for temperature of tray therein | |
| KR20220130610A (en) | Wafer Temperature Gradient Control to Suppress Slip Formation in High-Temperature Epitaxial Film Growth | |
| CN203569238U (en) | Silicon carbide epitaxial growth reaction chamber | |
| KR101116859B1 (en) | In-Situ Monitoring Apparatus of Wafer Thin Film Depositing Device Having Plurality of Wafer Pocket | |
| CN202904399U (en) | Temperature control system, metal organic chemical vapor deposition equipment and semiconductor film deposition equipment | |
| CN118156167A (en) | Temperature detection method and system for improving wavelength uniformity | |
| Yan et al. | Novel temperature calibration for epitaxial growth characterization | |
| Rogers et al. | Reduction of process variation through automated substrate temperature uniformity mapping in multi-wafer mbe systems |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140122 |