CN101906622B - Device and method for controlling temperature and uniformity of epitaxial wafers in MOCVD system - Google Patents
Device and method for controlling temperature and uniformity of epitaxial wafers in MOCVD system Download PDFInfo
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- CN101906622B CN101906622B CN 201010263355 CN201010263355A CN101906622B CN 101906622 B CN101906622 B CN 101906622B CN 201010263355 CN201010263355 CN 201010263355 CN 201010263355 A CN201010263355 A CN 201010263355A CN 101906622 B CN101906622 B CN 101906622B
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Abstract
The invention discloses a device for controlling temperature and uniformity of epitaxial wafers in an MOCVD (metal organometallic chemistry vapor deposition) system. A group of non-contact optical thermometers is arranged above a tray along the radial direction to feed back the temperature of single or a plurality of epitaxial wafers in a plurality of annular areas. A temperature controller independently controls the power output of a plurality of heating elements below the tray by using difference minimization of a statistical average value of the temperatures of the epitaxial wafers and an epitaxial process specified temperature as a target. The plurality of epitaxial wafers in each annular area are correspondingly heated by using one or more lower adjacent heating elements which are arranged annularly and have small radial coverage area so as to effectively balance the radial heat loss of the epitaxial wafers and the tray under the process condition of different temperatures and realize accurate and stable control of the temperature and the uniformly between the single epitaxial wafers and the adjacent epitaxial wafers. The device is also provided with a contact thermocouple thermometer for measuring a heater temperature serving as a reference point of the epitaxial process specified temperature and meanwhile monitoring whether the heater works normally.
Description
Technical field
The present invention relates to a kind of MOCVD for the production of the compound semiconductor light electrical part (metal organic chemical vapor deposition) system and control method thereof, particularly wherein be used for control epitaxial wafer temperature and inhomogeneity apparatus and method.
Background technology
Metal organic chemical vapor deposition (hereinafter to be referred as MOCVD) is by deposition one deck or lasting deposit multilayer extension crystalline network film, to form the process such as semiconducter device such as photodiodes (LED) at epitaxial wafer.Performance and the good article rate of the normal distribution of described device such as wavelength (color), brightness and forward voltage, the homogeneity that directly is comprised of epitaxial wafer (or claiming substrate base) quality, thickness and the material of upper each layer epitaxial film determines; And the homogeneity of this epitaxial film, again by evenly mixed and the distribution direct correlation of reactant gases on the temperature homogeneity of epitaxial wafer and the epitaxial wafer surface.For example, when the luminous lattice film of extension key, greater than 3 ℃, the good article rate of this device just may reduce by 15%～20% such as the temperature difference of epitaxial wafer.
In addition, for improving the production capacity of system, reduce the production cost of substrate extension, in the MOCVD reaction chamber, carry out simultaneously epitaxially grown epitaxial wafer quantity in continuous increase, wherein be no lack of large-sized epitaxial wafer.Therefore, when the extension lattice film, how to control between the epitaxial wafer, and the homogeneity of temperature on the single large size epitaxial wafer, most important for obtaining high-quality epitaxial film and improving the device good article rate.
Temperature and the homogeneity of control epitaxial wafer when metal organic chemical vapor deposition extension lattice film, at first, need its well heater directly or by placing the pallet of epitaxial wafer, in same epitaxy technique temperature or under different epitaxy technique temperature, can both heat uniformly epitaxial wafer.
This requirement is particularly important during to the lattice film of extension such as light emitting diode (LED), its multilayer film all continue to finish in same reaction chamber, and several layer films of its key are very high to the uniformity requirement of temperature, and temperature differs greatly between the different epitaxy techniques.For example, the epitaxy technique temperature of luminescent layer film is 700 ℃～900 ℃, and P-knot film is 900 ℃～1050 ℃, and N-knot film is 1020 ℃～1050 ℃.
Because under different epitaxy technique temperature condition, thermal equilibrium condition in the epitaxial reaction chamber is different, each epitaxial wafer, especially be placed on the pallet Different Diameter to locational epitaxial wafer, the heat of its reception and the heat of loss have very big-difference, therefore, the epitaxial wafer well heater must have the controllability of very large homogeneous heating.
In the extension technological process, need to measure the temperature of epitaxial wafer, the homogeneity of single epitaxial wafer temperature, and the temperature homogeneity between the epitaxial wafer, the measuring method of this temperature not only needs accurately and fast, and measured data can be controlled temperature and homogeneity, the especially epitaxial wafer of epitaxial wafer and the temperature homogeneity between the epitaxial wafer effectively, in time by temperature-control device.
Described temperature-control device, generally according to temperature and the designed function of epitaxial wafer well heater of the thermometric feedback data of epitaxial wafer, epitaxy technique regulation, each regional power of control heater is to realize temperature and the inhomogeneity control to epitaxial wafer.
And temperature and the performance index that homogeneity has two keys, accuracy and the stability of control epitaxial wafer.Wherein, accuracy refers to the actual temperature controlled and the levels of precision of specified temperature; Stability refers to that the actual temperature of controlling reaches the time of specified temperature scope and the intensity of variation of actual temperature in whole control process.Therefore, accuracy and the stability of the control of epitaxial wafer temperature and homogeneity, by the measuring method of the function of epitaxial wafer well heater, temperature, and the control method of temperature determine.
The apparatus and method of existing a kind of epitaxial wafer thermal evenness controlling, as depicted in figs. 1 and 2, in the reaction chamber of MOCVD system, a plurality of epitaxial wafers 400 radially, evenly are placed in the some recessed dish that pallet 100 upper surfaces 101 correspondences offer.Pallet 100 belows radially, Independent is equipped with the resistive heating elements 301,302,303 of three annular spread, respectively endocyclic area, territory, Central District and the outer region of corresponding heated tray 100.Wherein, heating unit 302 areas are larger, are the main devices that the some epitaxial wafers 400 that are placed on the territory, pallet 100 Central District are heated; Do not place epitaxial wafer 400 on the interior ring of described pallet 100 and the outer region.Described pallet 100 along its central shaft by rotating mechanism 600 driven rotary, to advance a temperature homogeneity of improving between epitaxial wafer 400 and the epitaxial wafer 400.
The optical temperature meter (Pyrometer) of some groups of noncontacts-luminous compensation is set respectively above pallet 100, wherein, non-contact optical thermometer 501 is arranged on top, territory, pallet 100 Central District, upwards each encloses some epitaxial wafer temperature 204 in corresponding measurement footpath, and feed back to temperature regulator 503, power ratio control take-off equipment 504 changes the power of heating unit 302, realizes the temperature control to epitaxial wafer 400.
Because the homogeneity of epitaxial wafer 400 temperature is determined by ring temperature 201, pallet outer shroud temperature 202 in the pallet temperature 202 between the epitaxial wafer 400 and the pallet indirectly.Therefore one group of non-contact optical thermometer 502 also is set, feed back after detecting respectively and will encircle in the pallet pallet temperature 202 combinations between temperature 201 or pallet outer shroud temperature 203 and the epitaxial wafer 400, by independent two temperature regulators 503 that arrange, heating unit 301 under ring and the outer region in respectively power ratio control take-off equipment 504 changes, 303 power, realization is to the control of epitaxial wafer 400 temperature homogeneities.
Yet there are following problem in this device and temperature controlled method.At first, non-contact optical thermometer 501 generally is installed in the reaction chamber top, directly measures the temperature on epitaxial wafer 400 surfaces, and this is the temperature of extension reaction needed control just.But be full of reactant gases between non-contact optical thermometer 501 and the epitaxial wafer 400, gas aggradation easily reacts on the surface of solid, in the life-time service, eyeglass on the light path of non-contact optical thermometer 501 can be because the impact of plated film gas aggradation, cause the skew in the temperature survey, change the temperature survey accuracy.
Secondly, the heating unit 302 under the territory, Central District, under the different operating temperature of adjacent epitaxy technique, particularly high temperature and the temperature difference differ under the larger different epitaxy techniques, can not effectively regulate the temperature homogeneity between single epitaxial wafer 400 and the epitaxial wafer 400.Although this temperature homogeneity can be improved to a certain extent by the heating unit 301,303 of endocyclic area and outer region, but because the heating unit 302 in territory, Central District, the zone that covers is very large, and the power of regulating this heating unit 302 can not uniform balance pallet 100 and epitaxial wafer 400 heat loss radially.In the situation that quantity increases and size increases of epitaxial wafer 400, this problem is with even more serious.Therefore, there is the controllability problem in above-mentioned well heater, makes between single epitaxial wafer 400 and the some epitaxial wafers 400, and accurate and stable thermal evenness controlling is difficult the realization.
In addition, since the heat of epitaxial wafer 400 run off with and from the different temperature difference that cause of pallet 100 contact positions, especially on the large size epitaxial wafers 400 such as 4 inches of diameters, even according to ring temperature 201, pallet outer shroud temperature 203 in the pallet temperature 202 between the epitaxial wafer 400 of surveying and the pallet, control the temperature homogeneity of pallet 100, also can't guarantee the temperature homogeneity of epitaxial wafer 400.And because the thermal capacity of pallet 100 and epitaxial wafer 400 differs larger, and both temperature differ more than 20 ℃ at least, and maximum can be above 50 ℃.Therefore, even pallet 100 temperature homogeneities obtain stable control, the stability of epitaxial wafer 400 temperature homogeneities also is difficult to guarantee.
At last, the associated temperature 201,202 of above-mentioned pallet 100,203 is fed back, and is independent mutually with the feedback of epitaxial wafer temperature 204, carries out respectively some heating units 301,302,303 of power regulation, temperature to epitaxial wafer 400 can influence each other, and also causes the unstable of its temperature and homogeneity control.
Summary of the invention
The purpose of this invention is to provide a kind of when metal organic chemical vapor deposition (MOCVD) extension lattice film, control epitaxial wafer temperature and inhomogeneity apparatus and method, can be when lasting extension different crystalline lattice film, effectively control temperature and the homogeneity of single epitaxial wafer in the large-temperature range very much, and can effectively control temperature and homogeneity between the epitaxial wafer.
In order to achieve the above object, technical scheme of the present invention provides a kind of for MOCVD system control epitaxial wafer temperature and inhomogeneity device, comprise the corresponding pallet that is placed with some epitaxial wafers of some recessed dish by the upper surface setting, be arranged on one group of non-contact optical thermometer of described pallet top, and the well heater that is arranged on the pallet below.
Described pallet is disposed radially some concentrics but annular section that radius increases progressively, and described some epitaxial wafers are arranged evenly in these some annular sections;
Described one group of non-contact optical thermometer radially is arranged in described pallet top, each or adjacent several non-contact optical thermometers, the corresponding temperature that detects the some epitaxial wafers in the same annular section on the described pallet;
But described well heater comprises the heating unit of one group of circular permutation independent power input of concentric setting, make the heating unit of each or adjacent several ring-types by heated tray, be arranged in a plurality of epitaxial wafers on the same annular section on the corresponding heated tray.
Described for MOCVD system control epitaxial wafer temperature and inhomogeneity device, also comprise and described one group of temperature gauge linked temperature regulator of non-contact optical; Described one group of non-contact optical thermometer feeds back to described temperature regulator with the epitaxial wafer temperature data that records respectively.
Described for MOCVD system control epitaxial wafer temperature and inhomogeneity device, also comprise the some power output devices that are connected and are subjected to its control with described temperature regulator; Each heating unit correspondence is connected with power output device, and the independent power of regulating each heating unit, realizes the temperature control to pallet and epitaxial wafer.
When placing 3 inches or following some epitaxial wafers on the described pallet, some epitaxial wafers in the same annular section, the top is by at least one described non-contact optical thermometer detected temperatures, and the below is heated by at least one described heating unit of independently controlling.
When placing 4 inches or above some epitaxial wafers on the described pallet, some epitaxial wafers in the same annular section, the top is by at least two described non-contact optical thermometer detected temperatures, and the below is by the described heating units heating of at least two independent controls.
Be provided with at least one contact thermocouple thermometer on the well heater of described pallet below, described at least one contact thermocouple thermometer is directly measured the temperature of the described well heater of acquisition, as monitoring point and the temperature controlled reference point of epitaxial wafer of well heater working order.
Describedly it is characterized in that for MOCVD system control epitaxial wafer temperature and inhomogeneity device, also comprise swivel arrangement; Described tray bottom is provided with central shaft, and central shaft is passed down through described well heater, is connected with described swivel arrangement, drives the pallet rotation by swivel arrangement.
A kind of for MOCVD system control epitaxial wafer temperature and inhomogeneity method, it comprises following steps:
Step 1, by one in the one group of non-contact optical thermometer that radially arranges or adjacent several, correspondingly measure on the pallet temperature of a plurality of epitaxial wafers in the same annular section, and feed back to same temperature regulator and carry out statistical treatment;
Step 2, by the temperature of same temperature regulator according to the actual measurement of the epitaxy technique temperature of setting and described one group of non-contact optical thermometer feedback, the driving power take-off equipment independently changes below the pallet power of each heating unit that can independently control in the well heater;
Step 3, each or the adjacent heating unit that several can independently be controlled be by heated tray, makes correspondence be placed on that the epitaxial wafer in the annular section reaches the temperature that sets on the pallet, and obtain desired temperature homogeneity.
Demarcate the primary data of setting up in the described temperature regulator, comprise: the temperature parameter that pallet and epitaxial wafer heat run off;
The temperature parameter of the output rating of the described heating unit of corresponding each annular section, and power regulation is on the parameter that affects of other annular section epitaxial wafer temperature;
And the thermometric heater temperature of contact thermocouple that arranges on the well heater of pallet below, with the Relation Parameters of described one group of thermometric epitaxial wafer temperature of non-contact optical.
Statistical average value is processed and calculated to the Temperature Feedback data of a plurality of epitaxial wafers on each annular section of pallet that described temperature regulator records described non-contact optical thermometer correspondence;
Afterwards, described temperature regulator is compared described statistical average value respectively with the temperature of epitaxy technique regulation, obtain the temperature contrast of a plurality of epitaxial wafers on each annular section;
Take described temperature contrast minimum as target, temperature regulator driving power take-off equipment changes the output rating of each heating unit, realizes the temperature between single epitaxial wafer on the pallet and the adjacent epitaxial wafer and inhomogeneity control.
Compared with prior art, the invention has the advantages that: one group noncontact, the luminous compensate for optical thermometer of the present invention by radially arranging, directly measure the temperature of epitaxial wafer as the feedback signal of the power change of respective regions heating unit.The heater temperature of also directly measuring by the contact thermocouple thermometer is to monitor whether well heater works and as the reference point of epitaxy technique specified temperature, to guarantee thermometric accuracy.For large-sized epitaxial wafer, also can make the different radial positions of one group of a plurality of epitaxial wafer in the same annular section of pallet, corresponding adjacent a plurality of non-contact optical thermometers guarantee the accurate of each epitaxial wafer measurement respectively.
Temperature regulator of the present invention is surveyed the difference minimum of the statistical average value of epitaxial wafer temperature and epitaxy technique specified temperature as target take regional, temperature according to different epitaxy technique regulations, on temperature controlled method, at least be provided with the temperature parameter that pallet and epitaxial wafer heat run off, or the temperature parameter of each regional heating unit output rating, with the power regulation of each the regional heating unit parameter that affects on other regional epitaxial wafer temperature, by the requirement of epitaxial wafer temperature and inhomogeneity control accuracy and stability, determine the power stage of each regional heating unit.
The present invention is also by each or every several adjacent heating units, its top of main corresponding heating, one group of a plurality of epitaxial wafer in the same annular section of pallet.Because the area that the heating unit of each ring-type radially covers is little, under the processing condition of differing temps, the power energy active balance epitaxial wafer of independent each heating unit of control and pallet run off at heat radially, can realize adjustability and controllability to the epitaxial wafer homogeneous heating, can effectively realize temperature between single epitaxial wafer and the adjacent epitaxial wafer and inhomogeneity accurate and stable control.
Description of drawings
Fig. 1 is the synoptic diagram that epitaxial wafer is radially arranged on pallet;
Fig. 2 is the structural representation of the device of existing a kind of epitaxial wafer thermal evenness controlling;
To be the present invention carry out the structural representation of pallet in the device of temperature and homogeneity control at embodiment 1 to Fig. 3 for 2 inches epitaxial wafers;
Fig. 4 a plurality of 2 inches epitaxial wafers that are the present invention in the device of embodiment 1 described epitaxial wafer temperature and homogeneity control schematic top plan view of circular permutation radially on pallet;
To be the present invention carry out the structure schematic top plan view of the heating unit that concentric annular arranges in the device of temperature and homogeneity control at embodiment 1 to Fig. 5 for 2 inches epitaxial wafers;
Fig. 6 is the present invention carries out the device of temperature and homogeneity control for 2 inches epitaxial wafers at embodiment 1 overall structure schematic side view;
Fig. 7 is the principle schematic that adjacent heating unit heats epitaxial wafer among the present invention;
To be the present invention carry out the structural representation of pallet in the device of temperature and homogeneity control at embodiment 2 to Fig. 8 for 4 inches epitaxial wafers;
Fig. 9 a plurality of 4 inches epitaxial wafers that are the present invention in the device of embodiment 2 described epitaxial wafer temperature and homogeneity control schematic top plan view of circular permutation radially on pallet;
To be the present invention carry out the structure schematic top plan view of the heating unit that concentric annular arranges in the device of temperature and homogeneity control at embodiment 2 to Figure 10 for 4 inches epitaxial wafers;
Figure 11 is the present invention carries out the device of temperature and homogeneity control for 4 inches epitaxial wafers at embodiment 2 overall structure schematic side view.
Embodiment
Below in conjunction with accompanying drawing, implementation structure of the present invention is described.
Embodiment 1
Control epitaxial wafer 40 temperature and inhomogeneity device are particularly useful for 3 inches of diameters or following reduced size epitaxial wafer 40 described in the present embodiment.Take 2 inches as example, cooperation is referring to Fig. 3, shown in Figure 4, this device comprises the round tray 10 (Fig. 3) that a upper surface offers some recessed dishes 11, the corresponding epitaxial wafer 40 of placing 2 inches in these some recessed dishes 11, make it at pallet 10 upper surface concentrics but in 4 annular sections that radius increases progressively (Fig. 4) arranged evenly, thereby can carry out to 54 epitaxial wafers 40 of placing simultaneously on the pallet 10 the MOCVD coating film treatment of multilayer epitaxial crystalline network film.
Cooperation is extremely shown in Figure 6 referring to Fig. 4, these pallet 10 belows are provided with well heater 30, the resistive heating elements 31 (Fig. 5) that comprises 4 ring-types of concentric setting, each ring-type heating unit 31 is arranged in a plurality of epitaxial wafers 40 (Fig. 6) on the same annular section by heated tray 10 on the corresponding heated tray 10.
The optical temperature meter of one group of 4 noncontact-luminous compensation (hereinafter to be referred as non-contact optical thermometer 21), be disposed radially above pallet 10, detect respectively the optical radiation of a plurality of epitaxial wafers 40 in the above-mentioned same annular section, and with epitaxial wafer 40 temperature datas that correspondence measures, jointly feed back to a temperature regulator 51.
This temperature regulator 51 is also by being connected with 4 independent power output devices 52 that arrange, according to the epitaxy technique temperature of setting and the temperature of actual measurement, control respectively the power of the heating unit 31 of above-mentioned 4 resistance-types, and then 4 epitaxial wafer 40 temperature that annular section is interior on the independent control pallet 10.
Deposit the temperature survey deviation that causes for fear of reactant gases at non-contact optical thermometer 21, also the well heater below pallet 10 30 is provided with at least one contact thermocouple thermometer 22, the temperature of direct HEATER FOR MEASURING 30 is as a temperature controlled reference point.
Described pallet 10 bottoms are provided with central shaft 12, and it is passed down through described well heater 30, are connected with swivel arrangement 60, drive pallet 10 rotations by swivel arrangement 60, further improve the homogeneity of heating.
Referring to shown in Figure 6, said apparatus comprises for the method for epitaxial wafer 40 temperature and homogeneity control:
Step 1, by the one group of non-contact optical thermometer 21 that radially arranges, correspondingly measure on the pallet 10 temperature of a plurality of epitaxial wafers 40 in the same annular section, and feed back to temperature regulator 51 and carry out statistical treatment;
Step 2, by temperature regulator 51 according to the epitaxy technique temperature of setting and the temperature of actual measurement, the driving power take-off equipment 52 independent power that are input to each heating unit 31 that change;
Step 3, the heating unit 31 that each is independently controlled pass through heated tray 10, and the epitaxial wafer 40 that correspondence is placed in the annular section of top reaches the temperature that sets, and obtains desired temperature homogeneity.
Wherein, also need to consider various factors during temperature survey: during pallet 10 rotation, top non-contact optical thermometer 21 obtains the temperature of the epitaxial wafer 40 on same arrangement radius, when the temperature sampling frequency is identical, sampling point near each epitaxial wafer 40 on the annular section in pallet 10 centers of circle is many, sampling point away from each epitaxial wafer 40 on the annular section in the center of circle is few, and this difference can reach several times.In addition, the temperature sampling during pallet 10 rotation, the temperature that records may be on the epitaxial wafer 40, may be on the pallet 10, also may be pallet 10 and epitaxial wafer 40 intersections.The temperature sampling frequency need to be mated with the rotating speed of pallet 10, and when sample frequency became very high with pallet 10 rotating speeds, temperature regulator 51 need to have enough data-handling capacities, and real-time Temperature Feedback control is provided.
When initial, in temperature regulator 51, well heater 30 temperature that at least one contact thermocouple thermometer 22 is directly measured have been set up by demarcation, the relation of epitaxial wafer 40 temperature that measure with non-contact optical thermometer 21.Be in operation, measure when occuring to be offset and to correct with this observed temperature when optical temperature, guarantee thermometric accuracy.In addition, whether this contact thermocouple thermometer 22 can directly monitor well heater 30 and work, the problem that the equipment that detects sooner is in operation and occurs.
Afterwards, temperature regulator 51 is compared statistical average value respectively with the temperature of epitaxy technique regulation, and according to the temperature contrast of each the annular section epitaxial wafer 40 that obtains, take this temperature contrast minimum as target, determine the output rating that each heating unit 31 is required, realize the temperature between single epitaxial wafer 40 and the adjacent epitaxial wafer 40 and inhomogeneity control.
Because everywhere temperature is a dynamic thermally equilibrated result all the time on the pallet 10, by heating unit 31 heating of below, is that the heat on surface runs off on the one hand on the one hand.Heat runs off relevant with surrounding environment (being the internal structure of reaction chamber); Also the different radial positions at pallet 10 have difference, the power of the temperature compensation that needs be exactly one about the function of radial position; It also is different under different temperature that heat runs off, the power of the temperature compensation that needs be exactly one about the function of temperature, these relations can be found out by initial demarcation, put into the database of temperature regulator 51, are used for the parameter setting of real time temperature control.
In addition, because the heat conduction is simultaneous on pallet 10 all directions, the temperature of epitaxial wafer 40 mainly by its directly heating unit 31 decisions of below, is subjected to the impact (seeing Fig. 7) of the heating unit 31 of adjacent below simultaneously.Therefore, if change the power of a heating unit 31, the not only corresponding change of epitaxial wafer 40 temperature of its top meeting, epitaxial wafer 40 temperature that are adjacent also have thereupon and change.The size of impact is relevant with many factors between the adjacent heating unit 31, and such as the shape of heating unit 31, heating unit 31 is to the distance of pallet 10, the thickness of pallet 10, the material of pallet 10 etc.Can find out rule by initial demarcation in the practical application, put into database, when carrying out the real time temperature feedback control, by temperature regulator 51 by calculating the temperature control parameter that needs.
Therefore, temperature parameter except heating unit 31 output ratings in above-mentioned each zone, in temperature regulator 51, at least also need to be set with the temperature parameter of pallet 10 and the loss of epitaxial wafer 40 heats, and the power regulation of each interior heating unit 31 in zone is on the parameter that affects of other regional epitaxial wafer 40 temperature.
Embodiment 2
To shown in Figure 11, pallet 10 belows are provided with well heater 30, and are connected with at least one contact thermocouple thermometer 22 referring to Fig. 9 in cooperation, directly HEATER FOR MEASURING 30 temperature.This well heater 30 comprises the resistive heating elements 31 (Figure 10) of 4 ring-types of concentric setting.Pallet 10 tops have been disposed radially 4 non-contact optical thermometers 21, for detection of the temperature of epitaxial wafer 40, and Temperature Feedback are sent to same temperature regulator 51.By the power output device 52 of temperature regulator 51 controls with each heating unit 31 corresponding connection, by changing power, control heating unit 31 to the Heating temperature of the epitaxial wafer 40 on its top pallet 10.Described pallet 10 by with being connected of swivel arrangement 60, around its central shaft 12 rotations, further improve the homogeneity that heats.
From different in above-described embodiment, as shown in figure 11, because epitaxial wafer 40 sizes increase, be arranged on the pallet 10 in a plurality of epitaxial wafers 40 on the same annular section, each epitaxial wafer 40 along pallet 10 radially, be crossed on its below, adjacent two the ring-type heating units 31, heated together by these two the independent heating units 31 of controlling.And a plurality of epitaxial wafers 40 on the same annular section also detect optical radiation together by adjacent two the non-contact optical thermometers 21 in top, obtain the feedback of epitaxial wafer 40 temperature.Therefore, not only can regulate the temperature homogeneity between the adjacent epitaxial wafer 40, can also regulate the temperature homogeneity in the single epitaxial wafer 40, this heating for large size epitaxial wafer 40 is particularly important.
As shown in figure 11, for the method for the described device of present embodiment for epitaxial wafer 40 temperature and homogeneity control, comprise:
Step 1, by the one group of non-contact optical thermometer 21 that radially arranges, correspondingly measure on the pallets 10 temperature of a plurality of epitaxial wafers 40 in the same annular section for per two, and feed back to temperature regulator 51 and carry out statistical treatment;
Step 2, by temperature regulator 51 according to the epitaxy technique temperature of setting and the temperature of actual measurement, the driving power take-off equipment 52 independent power that are input to each heating unit 31 that change;
Per two heating units 31 of step 3, independent control are by heated tray 10, and one group of epitaxial wafer 40 that correspondence is placed in the annular section of top reaches the temperature that sets, and obtains desired temperature homogeneity.
Wherein, be with maximum difference in above-described embodiment, because the size of epitaxial wafer 40 increases, the temperature of a plurality of epitaxial wafers 40 on the pallet 10 in the same annular section, two adjacent non-contact optical thermometers 21 by the top radial array are measured, and can obtain two different Temperature Feedback data of radial position on the same epitaxial wafer 40.By one group of non-contact optical thermometer 21, obtain each epitaxial wafer 40 and a plurality of epitaxial wafer 40 Temperature Feedback, be delivered to temperature regulator 51 and calculate statistical average value; And take the actual temperature of epitaxial wafer 40 and the difference minimum that requires temperature as target, determine the output rating that each heating unit 31 is required; By one group of epitaxial wafer 40 of the independent same annular section in per two heating units 31 corresponding heated tray 10 tops of controlling, realize the temperature between single epitaxial wafer 40 and the adjacent epitaxial wafer 40 and inhomogeneity control.
In the present embodiment, the deviation-correcting function of the problem that will solve in temperature control principle, the temperature survey, contact thermocouple thermometer 22 etc., with basically identical in above-described embodiment, only need the database of temperature regulator 51 the inside initial alignments, temperature controlled algorithm etc. are done respective change, to adapt to the situation of 4 inches of diameters or above large size epitaxial wafer 40.
In the present embodiment, described one group of epitaxial wafer 40 arranging for same annular section, carry out temperature detection non-contact optical thermometer 21, be used for thermoregulator heating unit 31, be not limited to above-mentioned 2, can specifically consider according to the factors such as size of pallet 10 and epitaxial wafer 40, some quantity are set respectively.
Comprehensive embodiment 1,2 described, the one group non-contact optical thermometer 21 of the present invention by radially arranging, the feedback signal that the temperature of directly measuring epitaxial wafer 40 changes as the power of respective regions heating unit 31; Also by contact thermocouple thermometer 22 direct HEATER FOR MEASURING 30 temperature, to monitor whether well heater 30 works and as the reference point of epitaxy technique specified temperature, to guarantee thermometric accuracy.For large-sized epitaxial wafer 40, also can make the different radial positions of one group of a plurality of epitaxial wafer 40 in the pallet 10 same annular sections, corresponding adjacent a plurality of non-contact optical thermometers 21 guarantee the accurate of each epitaxial wafer 40 measurement respectively.
The present invention is also by each or every several adjacent heating units 31, its top of corresponding heating, one group of a plurality of epitaxial wafer 40 in the pallet 10 same annular sections.Because the area that the heating unit 31 of each ring-type radially covers is little, under the processing condition of differing temps, the power energy active balance epitaxial wafer 40 of independent each heating unit 31 of control and pallet 10 run off at heat radially, can realize adjustability and controllability to epitaxial wafer 40 homogeneous heatings, can effectively realize temperature between single epitaxial wafer 40 and the adjacent epitaxial wafer 40 and inhomogeneity accurate and stable control.
Although content of the present invention has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple modification of the present invention with to substitute all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (10)
1. one kind is used for metal organic chemical vapor deposition system control epitaxial wafer temperature and inhomogeneity device, comprise by some recessed dish (11) correspondence that arranges at upper surface be placed with some epitaxial wafers (40) pallet (10), be arranged on one group of non-contact optical thermometer (21) of described pallet (10) top, and the well heater (30) that is arranged on pallet (10) below, it is characterized in that
Described pallet (10) is disposed radially some concentrics but annular section that radius increases progressively, and some described epitaxial wafers (40) are arranged evenly in these annular sections;
One group of described non-contact optical thermometer (21) radially is arranged in described pallet (10) top, each or adjacent several non-contact optical thermometers (21), the corresponding temperature that detects at least one epitaxial wafer (40) in the upper same annular section of described pallet (10);
Described well heater (30) comprises one group of circular permutation of concentric setting, the heating unit (31) of independent power input, each or adjacent several heating units (31) are arranged in a plurality of epitaxial wafers (40) on the same annular section by heated tray (10) on the corresponding heated tray (10).
2. be used for as claimed in claim 1 metal organic chemical vapor deposition system control epitaxial wafer temperature and inhomogeneity device, it is characterized in that, also comprise a temperature regulator (51) that is connected with one group of described non-contact optical thermometer (21); One group of described non-contact optical thermometer (21) feeds back to described temperature regulator (51) with epitaxial wafer (40) temperature data that records respectively.
3. be used for as claimed in claim 2 metal organic chemical vapor deposition system control epitaxial wafer temperature and inhomogeneity device, it is characterized in that, also comprise the some power output devices (52) that are connected and are subjected to its control with described temperature regulator (51); Each heating unit (31) correspondence is connected with power output device (52), by the independent power of regulating each heating unit (31), realizes the temperature control of epitaxial wafer (40).
4. be used for as claimed in claim 3 metal organic chemical vapor deposition system control epitaxial wafer temperature and inhomogeneity device, it is characterized in that, described pallet (10) is upper when placing 3 inches or following some epitaxial wafers (40), some epitaxial wafers (40) in the same annular section, the top is by at least one described non-contact optical thermometer (21) detected temperatures, and the below is by at least one described heating unit (31) heating of independently controlling.
5. be used for as claimed in claim 3 metal organic chemical vapor deposition system control epitaxial wafer temperature and inhomogeneity device, it is characterized in that, described pallet (10) is upper when placing 4 inches or above some epitaxial wafers (40), some epitaxial wafers (40) in the same annular section, the top is by at least two described non-contact optical thermometers (21) detected temperatures, and the below is by described heating unit (31) heating of at least two independent controls.
6. be used for as claimed in claim 1 metal organic chemical vapor deposition system control epitaxial wafer temperature and inhomogeneity device, it is characterized in that, be provided with at least one contact thermocouple thermometer (22) on the well heater (30) of described pallet (10) below, described at least one contact thermocouple thermometer (22) is directly measured the temperature of the well heater (30) that obtains, as monitoring point and the temperature controlled reference point of epitaxial wafer (40) of well heater (30) working order.
7. be used for as claimed in claim 1 metal organic chemical vapor deposition system control epitaxial wafer temperature and inhomogeneity device, it is characterized in that, also comprise swivel arrangement (60); Described pallet (10) bottom is provided with central shaft (12), this central shaft (12) is passed down through described well heater (30), be connected with described swivel arrangement (60), drive pallet (10) rotation by swivel arrangement (60).
8. one kind is used for metal organic chemical vapor deposition system control epitaxial wafer temperature and inhomogeneity method, is applied to device as claimed in claim 1, it is characterized in that described method comprises following steps:
Step 1, by one in the one group of non-contact optical thermometer (21) that radially arranges or adjacent several, the corresponding temperature of measuring a plurality of epitaxial wafers (40) in the upper same annular section of pallet (10), and feed back to same temperature regulator (51) and carry out statistical treatment;
Step 2, by the temperature of same temperature regulator (51) according to the actual measurement of the epitaxy technique temperature of setting and one group of described non-contact optical thermometer (21) feedback, the independent power that changes each heating unit that can independently control (31) in pallet (10) the below well heater (30) of driving power take-off equipment (52);
Step 3, each or the adjacent heating unit that several can independently be controlled (31) are by heated tray (10), the epitaxial wafer (40) that correspondence is placed in the upper annular section of pallet (10) reaches the temperature that sets, and obtains desired temperature homogeneity.
9. be used for as claimed in claim 8 metal organic chemical vapor deposition system control epitaxial wafer temperature and inhomogeneity method, it is characterized in that, demarcate the primary data of setting up in the described temperature regulator (51), comprise: the temperature parameter that pallet (10) and epitaxial wafer (40) heat run off;
The temperature parameter of the output rating of the heating unit (31) of corresponding each annular section, and power regulation is on the parameter that affects of other annular section epitaxial wafer (40) temperature;
And well heater (30) temperature that records of the upper contact thermocouple thermometer (22) that arranges of the well heater (30) of pallet (10) below, the Relation Parameters of epitaxial wafer (40) temperature that records with one group of described non-contact optical thermometer (21).
10. be used for as claimed in claim 9 metal organic chemical vapor deposition system control epitaxial wafer temperature and inhomogeneity method, it is characterized in that, the Temperature Feedback data of a plurality of epitaxial wafers (40) calculate statistical average value on each annular section of pallet (10) that described temperature regulator (51) records described non-contact optical thermometer (21) correspondence;
Afterwards, described temperature regulator (51) is compared described statistical average value respectively with the temperature of epitaxy technique regulation, obtain the temperature contrast of a plurality of epitaxial wafers (40) on each annular section;
Take described temperature contrast minimum as target, temperature regulator (51) driving power take-off equipment (52) changes the output rating of each heating unit (31), realizes temperature and inhomogeneity control between the upper single epitaxial wafer (40) of pallet (10) and the adjacent epitaxial wafer (40).
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