CN2630257Y - Superhigh vacuum chemical vapour deposition apparatus - Google Patents
Superhigh vacuum chemical vapour deposition apparatus Download PDFInfo
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- CN2630257Y CN2630257Y CN 03230900 CN03230900U CN2630257Y CN 2630257 Y CN2630257 Y CN 2630257Y CN 03230900 CN03230900 CN 03230900 CN 03230900 U CN03230900 U CN 03230900U CN 2630257 Y CN2630257 Y CN 2630257Y
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Abstract
The utility model relates to an ultrahigh vacuum chemical gas-phase sediment device, including a growth chamber, a pretreatment chamber and a sample injection chamber; a substrate slice tray and a heater are installed in the growth chamber, the growth chamber is ball-shaped, the heater is a round grid-shaped graphite flake that the middle is thick and the edge is thin; the diameter of the middle part is 50 to 60 percent of the diameter of the whole ring, and the thickness is 1.1 to 1.3 times than that of the edge thickness. The effective volume of gas distribution space in the growth chamber of device is big, the gas can flow everywhere during the flow process and the uniformity of substrate temperature is fine; moreover, the device can be widely used to produce sub-micron level monocrystal membrane material with even thickness and fine surface shape.
Description
Technical field
The utility model relates to the high vacuum chemical vapor deposition apparatus, in particular for the equipment of grow submicron film and superlattice, quantum-well materials.
Background technology
For a long time, can the quality of device material growth quality be the bottleneck that obtain high-level device always.The defect concentration of high quality devices material requirements epitaxial film materials is little, and stacking fault density is less than 100/cm
2, dislocation desity is less than 5000/cm
2, zone of transition is narrow simultaneously.Especially in recent years, the manufacturing of shallow junction high-frequency element enjoys favor, and this long epitaxial film of seeking survival again enters the superthin layer of submicron order.Though adopt equipment such as molecular beam epitaxy, can prepare high-quality submicron film material, because the material speed of growth is slow, the costliness of equipment self, make it difficult to industrialization promotion.The high vacuum chemical gas phase deposition technology can substitute molecular beam epitaxy aspect growth submicron thin silicon epitaxial film, the superlattice, and equipment cost is moderate, is fit to the production of enterprise and the research of R﹠D institution.At present, high vacuum chemical vapor phase growing apparatus (UHV/CVD) commonly used generally comprises growth room, pretreatment chamber and Sample Room, and its growth room is cylindric, or flat drum shape, and uniform graphite flake well heater of thickness and substrate slice pallet are installed in the growth room.The weak point of this device is: have the air-flow dead angle in process of growth 1., the useful volume of growth room's cavity is less under same volume, and the temperature of chamber wall is higher when making growth, absorption reaction gas, cause reactant gases in the reaction of wall high temperature place, be unfavorable for the growth of epitaxial film.2. the ubiquity heating uniformity is relatively poor, has directly influenced the homogeneity and the surface topography of film growth, and the utilization ratio of epitaxial wafer is reduced.
Summary of the invention
The purpose of this utility model provides a kind of high vacuum chemical vapor phase growing apparatus of the high-quality submicron order semiconductor film of growing.
Technical measures of the present utility model are that growth room's shape and the well heater that has the high vacuum chemical vapor phase growing apparatus now improved, this device comprises growth room, pretreatment chamber and Sample Room, substrate slice pallet and well heater are installed in the growth room, it is characterized in that said growth room is spherical, well heater is the circular paliform graphite flake of thick middle, thin edge, the diameter of thick middle part is 50～60% of a full circle diameter, and thickness is 1.1～1.3 times of edge thickness.
The utility model is owing to adopt spherical growth room, on the one hand, can make gas in flow process, the dead angle can not occur, the useful volume that growth gasses is asked at indoor distribution sky increases greatly, and even minimizing gas-phase nucleation that can be clearly is because high temperature, gas is nucleation on wall, become karyomicrosome also to be difficult to be deposited on the substrate, thereby guaranteed the cleaning of epitaxial wafer, it has the characteristics of cold wall extension again in this.And the employing middle portion paliform circular graphite heater thick than the edge, the intermediary resistance per unit length is different with the edge resistance per unit length like this, the temperature of edge section is than intermediary height, thereby can remedy because the energy of edge's conduction forfeiture makes the homogeneity of underlayer temperature that tangible improvement arranged.The utility model can be widely used in the monocrystal thin films material that growth thickness is even, have the submicron order of good surface pattern.
Description of drawings
Fig. 1 is a high vacuum chemical vapor phase growing apparatus synoptic diagram;
Fig. 2 is the circular graphite heater of paliform;
Fig. 3 is the side-view of graphite heater.
Embodiment
With reference to Fig. 1, the high vacuum chemical vapor phase growing apparatus comprises and is globular growth room 1, pretreatment chamber 2 and Sample Room 3, substrate slice pallet 4 and well heater 5 are installed in the growth room of spherical cavity, well heater 5 is the circular paliform graphite flake of thick middle, thin edge, see Fig. 2, shown in Figure 3, the diameter of thick middle part is 50～60% of a full circle diameter, and thickness is 1.1～1.3 times of edge thickness.6 is the gas circuit inlet of growth room among the figure, and 7 is electron beam gun, and 8 is window of tube, and 9 is viewing window, and 10 is interior baking bulb, and 11 is sublimation pump.
Claims (1)
1. high vacuum chemical vapor phase growing apparatus, comprise growth room (1), pretreatment chamber (2) and Sample Room (3), substrate slice pallet (4) and well heater (5) are installed in the growth room, it is characterized in that said growth room (1) is spherical, well heater (5) is the circular paliform graphite flake of thick middle, thin edge, the diameter of thick middle part is 50～60% of a full circle diameter, and thickness is 1.1～1.3 times of edge thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03230900 CN2630257Y (en) | 2003-04-29 | 2003-04-29 | Superhigh vacuum chemical vapour deposition apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03230900 CN2630257Y (en) | 2003-04-29 | 2003-04-29 | Superhigh vacuum chemical vapour deposition apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2630257Y true CN2630257Y (en) | 2004-08-04 |
Family
ID=34291120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03230900 Expired - Fee Related CN2630257Y (en) | 2003-04-29 | 2003-04-29 | Superhigh vacuum chemical vapour deposition apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2630257Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101906622A (en) * | 2010-08-20 | 2010-12-08 | 华晟光电设备(香港)有限公司 | Device and method for controlling temperature and uniformity of epitaxial wafers in MOCVD system |
| CN104762606A (en) * | 2015-04-09 | 2015-07-08 | 玉林师范学院 | Graphene chemical gas phase process preparation furnace body device with easiness in realizing gas phase dynamic balance |
| CN104787757A (en) * | 2015-04-09 | 2015-07-22 | 玉林师范学院 | Multi-port gas outlet device arranged at tail end of graphene CVD (chemical vapor deposition) preparation furnace and capable of realizing gas-phase kinetics control |
-
2003
- 2003-04-29 CN CN 03230900 patent/CN2630257Y/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101906622A (en) * | 2010-08-20 | 2010-12-08 | 华晟光电设备(香港)有限公司 | Device and method for controlling temperature and uniformity of epitaxial wafers in MOCVD system |
| CN101906622B (en) * | 2010-08-20 | 2013-03-20 | 江苏中晟半导体设备有限公司 | Device and method for controlling temperature and uniformity of epitaxial wafers in MOCVD system |
| CN104762606A (en) * | 2015-04-09 | 2015-07-08 | 玉林师范学院 | Graphene chemical gas phase process preparation furnace body device with easiness in realizing gas phase dynamic balance |
| CN104787757A (en) * | 2015-04-09 | 2015-07-22 | 玉林师范学院 | Multi-port gas outlet device arranged at tail end of graphene CVD (chemical vapor deposition) preparation furnace and capable of realizing gas-phase kinetics control |
| CN104762606B (en) * | 2015-04-09 | 2018-02-27 | 玉林师范学院 | The graphene chemical gas-phase method for being easy to gas phase kinetics balance prepares body of heater device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |