CN116145249A - Multi-source high-pressure gas atomization vertical structure Mist-CVD equipment - Google Patents
Multi-source high-pressure gas atomization vertical structure Mist-CVD equipment Download PDFInfo
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- CN116145249A CN116145249A CN202211616685.3A CN202211616685A CN116145249A CN 116145249 A CN116145249 A CN 116145249A CN 202211616685 A CN202211616685 A CN 202211616685A CN 116145249 A CN116145249 A CN 116145249A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to a multisource high-pressure gas atomization vertical structure Mist-CVD device, which comprises: the device comprises an atomized particle generating device, a reaction device and a control device, wherein the atomized particle generating device and the reaction device are connected and are arranged in a vertical structure; the atomized particle generating device comprises a high-pressure gas generating chamber and a plurality of precursor solution storage chambers, and the reaction device comprises a reaction chamber; wherein the high-pressure gas generation chamber stores high-pressure gas or is provided with a gas pressurizing device to provide the high-pressure gas; the precursor solution storage chamber is used for storing a precursor solution; the high-pressure gas enters the first pipeline and then contacts with the precursor solution entering the first pipeline, the precursor solution is atomized under the action of the high-pressure gas to obtain atomized particles, and the atomized particles enter the reaction chamber through the first pipeline to react and grow to obtain the semiconductor film. The Mist-CVD equipment provided by the invention avoids the problem of insufficient film uniformity of the horizontal-structure Mist-CVD equipment in the film forming process.
Description
Technical Field
The invention belongs to the technical field of semiconductor material equipment, and particularly relates to a multisource high-pressure gas atomization vertical structure Mist-CVD (chemical vapor deposition) device.
Background
The power semiconductor has a core position at the present time.
Techniques for epitaxial growth of oxide semiconductor films include Molecular Beam Epitaxy (MBE), metal Oxide Chemical Vapor Deposition (MOCVD), hydride Vapor Phase Epitaxy (HVPE), and the like. Such techniques, while suitable for the fabrication of oxide semiconductor epitaxial films with high uniformity, are generally expensive in equipment, high in energy consumption, and complex in growth process. Indirectly increases the preparation cost of the material, and the crystallization quality of the large-area epitaxial thin film material needs to be improved. Therefore, the atomized chemical vapor deposition (Mist-CVD) is a cheap and low-cost epitaxial growth technology which can be used for growing the oxide semiconductor film in large size, and has very important significance for the growth of the oxide semiconductor film and the development of device technology.
However, most of the prior Mist-CVD equipment uses ultrasonic waves to atomize the precursor solution, and an atomization source is single, which has higher requirements on the speed and the transportation process of atomized particles, thus preventing the development and the application of the Mist-CVD equipment. In addition, since most of the conventional Mist-CVD equipment is of a horizontal structure, the problem of insufficient uniformity of the film easily occurs in the film forming process.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a vertical structure Mist-CVD device with multi-source high-pressure gas atomization. The technical problems to be solved by the invention are realized by the following technical scheme:
the invention provides a multisource high-pressure gas atomization vertical structure Mist-CVD device, which comprises: the device comprises an atomized particle generating device and a reaction device which are connected, wherein the atomized particle generating device and the reaction device are arranged in a vertical structure;
the atomized particle generating device comprises a high-pressure gas generating chamber and a plurality of precursor solution storage chambers, and the reaction device comprises a reaction chamber;
the high-pressure gas generation chamber is communicated with the reaction chamber through a first pipeline, and the precursor solution storage chambers can be independently opened and closed and are communicated with the first pipeline;
the high-pressure gas generation chamber stores high-pressure gas or is provided with gas pressurizing equipment to provide high-pressure gas; the precursor solution storage chamber is used for storing a precursor solution;
the high-pressure gas enters the first pipeline and then contacts with the precursor solution entering the first pipeline, the precursor solution is atomized under the action of the high-pressure gas to obtain atomized particles, and the atomized particles enter the reaction chamber through the first pipeline to react and grow to obtain the semiconductor film.
In one embodiment of the present invention, the atomized particle generating apparatus further comprises a plurality of second lines and a plurality of on-off valves, wherein,
the precursor solution storage chambers are respectively communicated with the first pipeline through the second pipeline;
the on-off valves are correspondingly arranged on the second pipeline.
In one embodiment of the present invention, each precursor solution storage chamber is provided with a fluid filling port communicated with the precursor solution storage chamber, and the fluid filling port is connected with a fluid filling device.
In one embodiment of the invention, an on-off valve is arranged in the reaction chamber at the connection with the first pipeline.
In one embodiment of the invention, the reaction chamber is located below or above the high pressure gas generating chamber.
In one embodiment of the invention, a rotatable substrate tray is disposed within the reaction chamber, the substrate tray facing a side of the high pressure gas generating chamber.
In one embodiment of the invention, the reaction device further comprises a heating module with adjustable power, wherein the heating module is arranged around the periphery of the reaction chamber and is positioned at the mounting position of the substrate tray.
In one embodiment of the present invention, the reaction apparatus further comprises an air extraction device, wherein the air extraction device is communicated with the reaction chamber through an air outlet arranged on the reaction chamber, and the air outlet is positioned at one side far away from the high-pressure gas generation chamber.
In one embodiment of the present invention, the shapes of the precursor solution storage chambers and the high pressure gas generation chamber include cubes, cylinders, hemispheres, or spheres, and the arrangement of all the precursor solution storage chambers includes a circular arrangement, a fan-shaped arrangement, or a star-shaped arrangement.
In one embodiment of the invention, the materials of the precursor solution storage chamber, the high pressure gas generation chamber, and the reaction chamber include corrosion resistant steel, quartz, graphite, or glass.
Compared with the prior art, the invention has the beneficial effects that:
1. the vertical structure Mist-CVD equipment with the multi-source high-pressure gas atomization can provide a large amount of needed atomized particles in a short time by adopting the high-pressure gas atomization without transporting by excessive pipelines, can perfectly solve the problems of the conventional Mist-CVD equipment, and in addition, a plurality of precursor solution storage chambers can be independently controlled to be on-off, so that each path of atomized gas can independently enter a reaction chamber. Secondly, the atomized particle generating device and the reaction device are arranged in a vertical structure, so that the problem of insufficient film uniformity of a horizontal structure Mist-CVD device in the film forming process is avoided.
2. The vertical structure Mist-CVD equipment for multi-source high-pressure gas atomization can realize multi-atomization sources and simultaneously use liquid sources and/or gas sources.
The foregoing description is only an overview of the present invention, and is intended to be implemented in accordance with the teachings of the present invention, as well as the preferred embodiments thereof, together with the following detailed description of the invention, given by way of illustration only, together with the accompanying drawings.
Drawings
FIG. 1 is a schematic diagram of a vertical structure Mist-CVD apparatus for multi-source high-pressure gas atomization according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of another multi-source high-pressure gas-atomized vertical structure Mist-CVD apparatus according to an embodiment of the invention.
Icon: 1-an atomized particle generation device; 2-a first precursor solution storage chamber; 21-a fluid supplementing port; 3-a high pressure gas generating chamber; 31-a first line; 32-a second line; 4-a second precursor solution storage chamber; a 5-reaction device; 7-a substrate tray; 6-a heating module; 8-on-off valve; 9-air extraction equipment; 10-reaction chamber.
Detailed Description
In order to further explain the technical means and effects adopted by the invention to achieve the preset aim, the following describes in detail a multisource high-pressure gas atomization vertical structure Mist-CVD device according to the invention with reference to the attached drawings and the detailed description.
The foregoing and other features, aspects, and advantages of the present invention will become more apparent from the following detailed description of the preferred embodiments when taken in conjunction with the accompanying drawings. The technical means and effects adopted by the present invention to achieve the intended purpose can be more deeply and specifically understood through the description of the specific embodiments, however, the attached drawings are provided for reference and description only, and are not intended to limit the technical scheme of the present invention.
Example 1
Referring to fig. 1 and fig. 2 in combination, fig. 1 is a schematic structural diagram of a multi-source high-pressure gas atomization vertical structure Mist-CVD apparatus according to an embodiment of the present invention; FIG. 2 is a schematic diagram of another multi-source high-pressure gas-atomized vertical structure Mist-CVD apparatus according to an embodiment of the invention.
The embodiment provides a multisource high-pressure gas atomization vertical structure Mist-CVD (chemical vapor deposition) device, which comprises an atomized particle generating device 1 and a reaction device 5 which are connected, wherein the atomized particle generating device 1 and the reaction device 5 are arranged in a vertical structure.
Alternatively, the atomized particle generating apparatus 1 is located above the reaction apparatus 5 as shown in fig. 1, or the atomized particle generating apparatus 1 is located below the reaction apparatus 5 as shown in fig. 2.
In an alternative embodiment, the atomized particle generating apparatus 1 includes a high pressure gas generating chamber 3 and a plurality of precursor solution storage chambers, and the reaction apparatus 5 includes a reaction chamber 10. The high-pressure gas generating chamber 3 is communicated with the reaction chamber 10 through a first pipeline 31, and the precursor solution storage chambers can be independently connected and disconnected and are communicated with the first pipeline 31.
The precursor solution storage chambers may be, for example, 2, i.e., the first precursor solution storage chamber 2 and the second precursor solution storage chamber 4 in fig. 1 and 2.
Specifically, the high-pressure gas generation chamber 3 stores therein high-pressure gas or is provided with a gas pressurizing device to supply high-pressure gas, alternatively, the high-pressure gas generation chamber may be connected to a high-pressure gas cylinder, or to the gas pressurizing device to obtain sufficient high-pressure gas. The precursor solution storage chamber is used for storing a precursor solution.
When the Mist-CVD equipment works, high-pressure gas enters the first pipeline 31 and then contacts with precursor solution entering the first pipeline 31, the precursor solution is atomized under the action of the high-pressure gas to obtain atomized particles, and the atomized particles enter the reaction chamber 10 through the first pipeline 31 to react and grow to obtain the semiconductor film.
In this embodiment, high pressure gas atomization is used to provide a large amount of desired atomized particles in a short period of time without the need for excessive piping.
In an alternative embodiment, the atomized particle generating apparatus 1 further includes a plurality of second lines 32 and a plurality of on-off valves, wherein the plurality of precursor solution storage chambers are respectively communicated with the first lines 31 through the second lines 32; a plurality of on-off valves are correspondingly installed on the second pipeline 32.
In this embodiment, on-off valves are provided on the communication lines between each precursor solution storage chamber and the high-pressure gas generation chamber 3 to select on-off of solution mixing. The precursor solution is torn and atomized by high-pressure gas to form atomized particles, and the atomized particles are carried by the high-pressure gas to form atomized gas, so that the atomized gas enters the rear epitaxial reaction chamber 10. By controlling the closing of the precursor solution storage chamber and the flow rate of the carrier gas in the high-pressure gas generation chamber 3, uniform atomization of different solution concentrations is realized.
Alternatively, the on-off valve may be programmed electrically and manually operated, such as a solenoid valve, thereby automatically controlling the on-off of the precursor solution storage chamber and the high pressure gas generation chamber 3, and may be other valves or switches capable of controlling the on-off, such as a ball valve, etc.
The precursor solution storage chamber may be directly connected to the high-pressure gas reaction chamber by a gas source for experimental exploration.
In an alternative embodiment, each precursor solution storage chamber is provided with a fluid infusion port 21 communicated with the precursor solution storage chamber, the fluid infusion port 21 is connected with a fluid infusion device, the fluid infusion device can be used for infusing the precursor solution storage chamber with the fluid infusion device, that is, the fluid infusion device is communicated with the precursor solution storage chamber through the fluid infusion port, the fluid infusion device can infuse the solution into the precursor solution storage chamber through the fluid infusion port, and therefore the fluid infusion function can be achieved, and the fluid infusion device can be an injection pump, a fluid infusion pump, a peristaltic pump or the like.
In an alternative embodiment, an on-off valve 8 is provided in the reaction chamber 10 at the connection to the first line 31, by means of which on-off valve 8 the reaction chamber 10 is opened and closed.
Most of the existing Mist-CVD equipment is of a horizontal structure, and the uniformity of film formation of the equipment of the horizontal structure is poor due to different amounts of atomized particles deposited on the front and back of the substrate sheet. Thus, the reaction chamber 10 of the present embodiment uses a vertical structural design, and as shown in fig. 1 and 2, the reaction chamber 10 is located below or above the high-pressure gas generation chamber 3.
In an alternative embodiment, a rotatable substrate tray 7 is provided within the reaction chamber 10, the substrate tray 7 facing the side of the high pressure gas generating chamber 3.
In this embodiment, the substrate tray 7 is used for supporting the substrate slice, that is, the substrate slice may be placed on the substrate tray 7, the substrate tray 7 may rotate at a certain speed, for example, by driving the motor to rotate, and the substrate tray 7 may be made of corrosion-resistant steel, quartz, glass, graphite, or the like.
In an alternative embodiment, the reaction device 5 further comprises a power-adjustable heating module 6, the heating module 6 being arranged around the periphery of the reaction chamber 10 and being located at the mounting position of the substrate tray 7.
In this embodiment, the heating module 6 is used for temperature control of the substrate tray 7, which may be resistance wire heating or radio frequency heating.
Optionally, the heating temperature of the heating module 6 ranges from 0 ℃ to 1500 ℃.
In an alternative embodiment, the reaction device 5 further comprises an evacuation device 9, the evacuation device 9 being in communication with the reaction chamber 10 through an evacuation port provided in the reaction chamber 10, the evacuation port being located on the side remote from the high pressure gas generation chamber 3.
In the embodiment, the vacuum environment can be obtained by the device by switching on the air extracting device 9 during the reaction, and the air flow uniformly flows through the substrate slice during the reaction process so as to achieve the purpose of uniform growth of the film.
In an alternative embodiment, the shape of the precursor solution storage chamber includes a cube, a cylinder, a hemisphere, or a sphere. Alternatively, the arrangement of all the precursor solution storage chambers may include an annular arrangement, a fan-shaped arrangement, or a star-shaped arrangement.
In an alternative embodiment, the shape of the high pressure gas generating chamber 3 comprises a cube, a cylinder, a hemisphere, or a sphere.
In an alternative embodiment, the materials of the precursor solution storage chamber, the high pressure gas generation chamber 3, and the reaction chamber 10 include corrosion resistant steel, quartz, graphite, or glass, which can be adapted to a corrosive environment.
The vertical structure Mist-CVD equipment with the multi-source high-pressure gas atomization can provide a large amount of needed atomized particles in a short time by adopting high-pressure gas atomization without transporting by too many pipelines, can perfectly solve the problems of the conventional Mist-CVD equipment, and in addition, a plurality of precursor solution storage chambers can be independently controlled on-off, so that each path of atomized gas can independently enter a reaction chamber. Secondly, the atomized particle generating device and the reaction device are arranged in a vertical structure, so that the problem of insufficient film uniformity of a horizontal structure Mist-CVD device in the film forming process is avoided. Secondly, the vertical structure Mist-CVD equipment for multi-source high-pressure gas atomization can realize multi-atomization sources and simultaneously use liquid sources and/or gas sources.
Example two
In this embodiment, on the basis of the first embodiment, a method for growing a semiconductor oxide film by using a multisource high-pressure gas atomized vertical structure Mist-CVD apparatus is provided, and the method is described by taking preparation of an aluminum gallium oxide film as an example, and the method comprises the following steps:
And 2, opening the air extraction equipment 9 to start vacuumizing the equipment so as to obtain a reaction environment with higher cleanliness. The heating module 6 in the reaction device 5 is turned on to keep the optimal growth temperature of the AlGaOx unchanged.
And 3, opening the high-pressure gas generation chamber 3 to generate high-pressure gas (taking nitrogen as an example). 0.05mol/L of gallium acetylacetonate solution is placed in the first precursor solution storage chamber 2, 0.05mol/L of aluminum acetylacetonate solution is placed in the second precursor solution storage chamber 4, and on-off valves of the first precursor solution storage chamber 2, the second precursor solution storage chamber 4 and the high-pressure gas generation chamber 3 are opened.
And 4, opening an on-off valve 8 connected with the high-pressure gas generation chamber 3 in the reaction chamber 10, tearing and atomizing the solution into small particles by high-pressure nitrogen, conveying the small particles to a substrate slice placed on the substrate tray 7, pumping out redundant gas by the pumping equipment 9, and simultaneously opening liquid supplementing inlets 21 of the two precursor solution storage chambers, and supplementing liquid by using a peristaltic pump.
And 5, heating the substrate tray 7, enabling the substrate sheet placed on the substrate tray to reach a reaction temperature, and rotating the tray at a preset speed to uniformly contact the transported atomized particles to perform chemical reaction on the substrate and gradually deposit the atomized particles to generate the aluminum gallium oxide film.
And 7, closing the air extraction equipment 9, closing on-off valves of the high-pressure gas generation chamber 3, the first precursor solution storage chamber 2 and the second precursor solution storage chamber 4, and inflating the reaction chamber 10.
And 8, repeating the operation according to the process until the epitaxial film meets the requirement.
It should be noted that in this document relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in an article or apparatus that comprises the element. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The orientation or positional relationship indicated by "upper", "lower", "left", "right", etc. is based on the orientation or positional relationship shown in the drawings, and is merely for convenience of description and to simplify the description, and is not indicative or implying that the apparatus or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as limiting the invention.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (10)
1. A multisource high-pressure gas atomized vertical structure Mist-CVD apparatus comprising: the device comprises an atomized particle generating device and a reaction device which are connected, wherein the atomized particle generating device and the reaction device are arranged in a vertical structure;
the atomized particle generating device comprises a high-pressure gas generating chamber and a plurality of precursor solution storage chambers, and the reaction device comprises a reaction chamber;
the high-pressure gas generation chamber is communicated with the reaction chamber through a first pipeline, and the precursor solution storage chambers can be independently opened and closed and are communicated with the first pipeline;
the high-pressure gas generation chamber stores high-pressure gas or is provided with gas pressurizing equipment to provide high-pressure gas; the precursor solution storage chamber is used for storing a precursor solution;
the high-pressure gas enters the first pipeline and then contacts with the precursor solution entering the first pipeline, the precursor solution is atomized under the action of the high-pressure gas to obtain atomized particles, and the atomized particles enter the reaction chamber through the first pipeline to react and grow to obtain the semiconductor film.
2. The multi-source high pressure gas atomized vertical structured Mist-CVD apparatus according to claim 1, wherein the atomized particle generating apparatus further comprises a plurality of second lines and a plurality of on-off valves, wherein,
the precursor solution storage chambers are respectively communicated with the first pipeline through the second pipeline;
the on-off valves are correspondingly arranged on the second pipeline.
3. The multi-source high-pressure gas atomized vertical structure Mist-CVD apparatus according to claim 1, wherein each precursor solution storage chamber is provided with a liquid replenishing port communicated with the precursor solution storage chamber, and the liquid replenishing device is connected through the liquid replenishing port.
4. The multisource high-pressure gas-atomized vertical structure Mist-CVD apparatus according to claim 1, wherein an on-off valve is provided in the reaction chamber at the connection with the first pipeline.
5. The multi-source high pressure gas atomized vertical structure Mist-CVD apparatus of claim 1 wherein the reaction chamber is located below or above the high pressure gas generation chamber.
6. The multi-source high pressure gas atomized vertical structure Mist-CVD apparatus of claim 5 wherein a rotatable substrate tray is disposed within the reaction chamber, the substrate tray facing a side of the high pressure gas generating chamber.
7. The multi-source high pressure gas atomized vertical structure Mist-CVD apparatus of claim 6 wherein the reaction apparatus further comprises a power adjustable heating module surrounding the reaction chamber and located at the mounting location of the substrate tray.
8. The multi-source high pressure gas atomized vertical structure Mist-CVD apparatus according to claim 7, wherein the reaction device further comprises a pumping apparatus communicating with the reaction chamber through a vent provided on the reaction chamber, the vent being located on a side remote from the high pressure gas generating chamber.
9. The multi-source high pressure gas atomized vertical structure Mist-CVD apparatus of claim 1 wherein the precursor solution storage chambers and the high pressure gas generation chamber are shaped as cubes, cylinders, hemispheres, or spheres, and all of the precursor solution storage chambers are arranged in an annular, fan-shaped, or star-shaped arrangement.
10. The multi-source high pressure gas atomized vertical structure Mist-CVD apparatus of claim 1 wherein the materials of the precursor solution storage chamber, the high pressure gas generation chamber and the reaction chamber comprise corrosion resistant steel, quartz, graphite or glass.
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| CN202211616685.3A CN116145249A (en) | 2022-12-15 | 2022-12-15 | Multi-source high-pressure gas atomization vertical structure Mist-CVD equipment |
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| CN202211616685.3A CN116145249A (en) | 2022-12-15 | 2022-12-15 | Multi-source high-pressure gas atomization vertical structure Mist-CVD equipment |
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