CN110690093B - 具有改进的成像分辨率的电子显微镜 - Google Patents

具有改进的成像分辨率的电子显微镜 Download PDF

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Publication number
CN110690093B
CN110690093B CN201910610201.6A CN201910610201A CN110690093B CN 110690093 B CN110690093 B CN 110690093B CN 201910610201 A CN201910610201 A CN 201910610201A CN 110690093 B CN110690093 B CN 110690093B
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China
Prior art keywords
microscope
sample
conduit
beam conduit
electron
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CN201910610201.6A
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English (en)
Chinese (zh)
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CN110690093A (zh
Inventor
A.汉斯特拉
P.唐娜
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FEI Co
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FEI Co
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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/36—Microscopes arranged for photographic purposes or projection purposes or digital imaging or video purposes including associated control and data processing arrangements
    • G02B21/361—Optical details, e.g. image relay to the camera or image sensor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/06—Means for illuminating specimens
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/24—Base structure
    • G02B21/26—Stages; Adjusting means therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H01J2237/0264—Shields magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H01J2237/0268—Liner tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1534—Aberrations

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
CN201910610201.6A 2018-07-06 2019-07-08 具有改进的成像分辨率的电子显微镜 Active CN110690093B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP18182145.5 2018-07-06
EP18182145.5A EP3591685A1 (en) 2018-07-06 2018-07-06 Electron microscope with improved imaging resolution

Publications (2)

Publication Number Publication Date
CN110690093A CN110690093A (zh) 2020-01-14
CN110690093B true CN110690093B (zh) 2025-04-04

Family

ID=62874744

Family Applications (1)

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CN201910610201.6A Active CN110690093B (zh) 2018-07-06 2019-07-08 具有改进的成像分辨率的电子显微镜

Country Status (5)

Country Link
US (2) US20200013580A1 (enExample)
EP (2) EP3591685A1 (enExample)
JP (1) JP7368124B2 (enExample)
KR (1) KR102856649B1 (enExample)
CN (1) CN110690093B (enExample)

Families Citing this family (6)

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Publication number Priority date Publication date Assignee Title
JP7369486B2 (ja) * 2020-03-02 2023-10-26 国立研究開発法人物質・材料研究機構 観測対象ガスの透過拡散経路観測装置及び観測対象ガスの計測方法、点欠陥位置検出装置及び点欠陥位置検出方法、並びに観測用の試料
US11437216B2 (en) 2020-12-31 2022-09-06 Fei Company Reduction of thermal magnetic field noise in TEM corrector systems
US11715618B2 (en) * 2021-08-03 2023-08-01 Fei Company System and method for reducing the charging effect in a transmission electron microscope system
DE102022124933A1 (de) * 2022-09-28 2024-03-28 Carl Zeiss Multisem Gmbh Vielstrahl-Teilchenmikroskop mit verbessertem Strahlrohr
DE102023101628B4 (de) 2023-01-24 2024-08-08 Carl Zeiss Microscopy Gmbh Teilchenstrahlmikroskop
CN119470525A (zh) * 2025-01-15 2025-02-18 华东师范大学 一种在原位电子显微镜中测试电子元器件性能的方法

Citations (3)

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Publication number Priority date Publication date Assignee Title
US4864228A (en) * 1985-03-15 1989-09-05 Fairchild Camera And Instrument Corporation Electron beam test probe for integrated circuit testing
DE102008035297A1 (de) * 2007-07-31 2009-02-26 Hitachi High-Technologies Corp. Aberrationskorrektureinrichtung für Ladungsteilchenstrahlen in einem optischen System einer Ladungsteilchenstrahlvorrichtung und Ladungsteilchenstrahlvorrichtung mit der Aberrationskorrektureinrichtung
CN107123584A (zh) * 2016-02-24 2017-09-01 Fei 公司 在带电粒子显微镜中研究动态样本行为

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FR2034981A1 (enExample) * 1969-03-17 1970-12-18 Jeol Ltd
US3787696A (en) * 1972-03-15 1974-01-22 Etec Corp Scanning electron microscope electron-optical column construction
US4143298A (en) * 1977-09-01 1979-03-06 Zenith Radio Corporation Television cathode ray tube having a voltage divider providing temperature-invariant voltage and associated method
DE3010376A1 (de) * 1980-03-18 1981-09-24 Siemens AG, 1000 Berlin und 8000 München Abschirmzylinder fuer ein magnetisches ablenksystem
JPS60192358U (ja) * 1984-05-31 1985-12-20 株式会社島津製作所 荷電粒子線装置
US5364390A (en) * 1988-05-19 1994-11-15 Refractive Laser Research And Development, Inc. Handpiece and related apparatus for laser surgery and dentistry
JP2934707B2 (ja) * 1989-06-19 1999-08-16 株式会社ニコン 走査電子顕微鏡
EP0451370B1 (en) 1990-04-12 1996-03-27 Koninklijke Philips Electronics N.V. Correction system for a charged-particle beam apparatus
US6511575B1 (en) * 1998-11-12 2003-01-28 Canon Kabushiki Kaisha Treatment apparatus and method utilizing negative hydrogen ion
JP3403970B2 (ja) * 1999-05-27 2003-05-06 住友重機械工業株式会社 荷電粒子ビームの集群装置と集群方法
JP2004241190A (ja) * 2003-02-04 2004-08-26 Jeol Ltd 多極子レンズ用の多極子製造方法、多極子レンズ及び荷電粒子線装置
JP2005050579A (ja) * 2003-07-30 2005-02-24 Hitachi High-Technologies Corp 荷電粒子線装置
DE10344492B4 (de) * 2003-09-24 2006-09-07 Carl Zeiss Nts Gmbh Teilchenstrahlgerät
EP1605492B1 (en) * 2004-06-11 2015-11-18 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device with retarding field analyzer
JP2007294850A (ja) * 2006-03-30 2007-11-08 Tokyo Electron Ltd 静電偏向器及び電子線照射装置及び基板処理装置及び基板処理方法及び基板の製造方法
EP2487703A1 (en) * 2011-02-14 2012-08-15 Fei Company Detector for use in charged-particle microscopy
EP2511936B1 (en) * 2011-04-13 2013-10-02 Fei Company Distortion free stigmation of a TEM
EP3104155A1 (en) * 2015-06-09 2016-12-14 FEI Company Method of analyzing surface modification of a specimen in a charged-particle microscope
US9997327B1 (en) * 2016-12-08 2018-06-12 Jeol Ltd. Liner tube and electron microscope

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US4864228A (en) * 1985-03-15 1989-09-05 Fairchild Camera And Instrument Corporation Electron beam test probe for integrated circuit testing
DE102008035297A1 (de) * 2007-07-31 2009-02-26 Hitachi High-Technologies Corp. Aberrationskorrektureinrichtung für Ladungsteilchenstrahlen in einem optischen System einer Ladungsteilchenstrahlvorrichtung und Ladungsteilchenstrahlvorrichtung mit der Aberrationskorrektureinrichtung
CN107123584A (zh) * 2016-02-24 2017-09-01 Fei 公司 在带电粒子显微镜中研究动态样本行为

Also Published As

Publication number Publication date
US20200013580A1 (en) 2020-01-09
CN110690093A (zh) 2020-01-14
KR20200005474A (ko) 2020-01-15
US20230207254A1 (en) 2023-06-29
EP3594987A3 (en) 2020-12-23
JP2020009765A (ja) 2020-01-16
EP3594987A2 (en) 2020-01-15
JP7368124B2 (ja) 2023-10-24
KR102856649B1 (ko) 2025-09-05
EP3591685A1 (en) 2020-01-08

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