CN110679046B - 发光装置、投影仪以及发光装置的制造方法 - Google Patents
发光装置、投影仪以及发光装置的制造方法 Download PDFInfo
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- CN110679046B CN110679046B CN201880034971.4A CN201880034971A CN110679046B CN 110679046 B CN110679046 B CN 110679046B CN 201880034971 A CN201880034971 A CN 201880034971A CN 110679046 B CN110679046 B CN 110679046B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0362—Manufacture or treatment of packages of encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0364—Manufacture or treatment of packages of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Projection Apparatus (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017108347A JP7147132B2 (ja) | 2017-05-31 | 2017-05-31 | 発光装置、プロジェクター、および発光装置の製造方法 |
| JP2017-108347 | 2017-05-31 | ||
| PCT/JP2018/019843 WO2018221352A1 (ja) | 2017-05-31 | 2018-05-23 | 発光装置、プロジェクター、および発光装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110679046A CN110679046A (zh) | 2020-01-10 |
| CN110679046B true CN110679046B (zh) | 2022-01-14 |
Family
ID=64456525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880034971.4A Active CN110679046B (zh) | 2017-05-31 | 2018-05-23 | 发光装置、投影仪以及发光装置的制造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11133444B2 (enExample) |
| JP (1) | JP7147132B2 (enExample) |
| CN (1) | CN110679046B (enExample) |
| WO (1) | WO2018221352A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20200091388A1 (en) | 2018-09-19 | 2020-03-19 | Vuereal Inc. | Highly efficient microdevices |
| JP2021150373A (ja) * | 2020-03-17 | 2021-09-27 | セイコーエプソン株式会社 | 発光装置、プロジェクター、およびディスプレイ |
| WO2021241037A1 (ja) * | 2020-05-29 | 2021-12-02 | ソニーセミコンダクタソリューションズ株式会社 | 面発光レーザ装置、電子機器及び面発光レーザ装置の製造方法 |
| JP7556246B2 (ja) * | 2020-09-23 | 2024-09-26 | セイコーエプソン株式会社 | 発光装置、発光装置の製造方法およびプロジェクター |
| JP7613134B2 (ja) * | 2021-01-28 | 2025-01-15 | セイコーエプソン株式会社 | 発光装置、プロジェクター |
| JP7320794B2 (ja) * | 2021-03-15 | 2023-08-04 | セイコーエプソン株式会社 | 発光装置、プロジェクター、およびディスプレイ |
| JP7707605B2 (ja) * | 2021-03-29 | 2025-07-15 | セイコーエプソン株式会社 | 発光装置、プロジェクター、およびディスプレイ |
| JP7631976B2 (ja) * | 2021-03-29 | 2025-02-19 | セイコーエプソン株式会社 | 発光装置、プロジェクター、およびディスプレイ |
| JP7760879B2 (ja) * | 2021-09-29 | 2025-10-28 | セイコーエプソン株式会社 | 発光装置、プロジェクター及びディスプレイ |
Citations (5)
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| CN1722480A (zh) * | 2004-04-07 | 2006-01-18 | 三星电子株式会社 | 纳米丝发光器件及其制造方法 |
| CN102280549A (zh) * | 2010-06-11 | 2011-12-14 | 精工爱普生株式会社 | 发光装置及投影仪 |
| CN102290507A (zh) * | 2010-06-11 | 2011-12-21 | 精工爱普生株式会社 | 发光装置及投影仪 |
| CN104953019A (zh) * | 2014-03-27 | 2015-09-30 | 精工爱普生株式会社 | 发光装置的制造方法、发光装置以及投影仪 |
| WO2017009394A1 (en) * | 2015-07-13 | 2017-01-19 | Crayonano As | Nanowires/nanopyramids shaped light emitting diodes and photodetectors |
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| JP3681423B2 (ja) * | 1993-11-02 | 2005-08-10 | 松下電器産業株式会社 | 半導体微細柱の集合体,半導体装置及びそれらの製造方法 |
| TWI220319B (en) | 2002-03-11 | 2004-08-11 | Solidlite Corp | Nano-wire light emitting device |
| KR100552707B1 (ko) | 2004-04-07 | 2006-02-20 | 삼성전자주식회사 | 나노와이어 발광소자 및 그 제조방법 |
| US7345296B2 (en) | 2004-09-16 | 2008-03-18 | Atomate Corporation | Nanotube transistor and rectifying devices |
| KR100668964B1 (ko) * | 2005-09-27 | 2007-01-12 | 엘지전자 주식회사 | 나노 홈을 갖는 발광 소자 및 그의 제조 방법 |
| JP2008047850A (ja) | 2006-07-19 | 2008-02-28 | Mitsubishi Cable Ind Ltd | 窒化物半導体発光ダイオード素子 |
| US7786491B2 (en) * | 2006-02-02 | 2010-08-31 | Panasonic Corporation | Semiconductor light-emitting device comprising a plurality of semiconductor layers |
| JP2007235122A (ja) | 2006-02-02 | 2007-09-13 | Matsushita Electric Ind Co Ltd | 半導体発光装置及びその製造方法 |
| JP2007214260A (ja) * | 2006-02-08 | 2007-08-23 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびその製造方法 |
| JP5097460B2 (ja) | 2007-06-26 | 2012-12-12 | パナソニック株式会社 | 化合物半導体素子およびそれを用いる照明装置ならびに化合物半導体素子の製造方法 |
| FR2922685B1 (fr) | 2007-10-22 | 2011-02-25 | Commissariat Energie Atomique | Dispositif optoelectronique a base de nanofils et procedes correspondants |
| US8263990B2 (en) * | 2008-03-14 | 2012-09-11 | Panasonic Corporation | Compound semiconductor light-emitting element and illumination device using the same, and method for manufacturing compound semiconductor light-emitting element |
| JP5411441B2 (ja) | 2008-03-26 | 2014-02-12 | セイコーエプソン株式会社 | 発光装置 |
| JP5145120B2 (ja) * | 2008-05-26 | 2013-02-13 | パナソニック株式会社 | 化合物半導体発光素子およびそれを用いる照明装置ならびに化合物半導体発光素子の製造方法 |
| KR101567121B1 (ko) | 2008-09-01 | 2015-11-06 | 가꼬호징 조찌가꾸잉 | 반도체 광소자 어레이 및 그의 제조방법 |
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| JP5311049B2 (ja) | 2009-09-18 | 2013-10-09 | セイコーエプソン株式会社 | プロジェクター |
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| JP6972665B2 (ja) | 2017-05-31 | 2021-11-24 | セイコーエプソン株式会社 | 発光装置、プロジェクター、および発光装置の製造方法 |
-
2017
- 2017-05-31 JP JP2017108347A patent/JP7147132B2/ja active Active
-
2018
- 2018-05-23 US US16/618,097 patent/US11133444B2/en active Active
- 2018-05-23 WO PCT/JP2018/019843 patent/WO2018221352A1/ja not_active Ceased
- 2018-05-23 CN CN201880034971.4A patent/CN110679046B/zh active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1722480A (zh) * | 2004-04-07 | 2006-01-18 | 三星电子株式会社 | 纳米丝发光器件及其制造方法 |
| CN102280549A (zh) * | 2010-06-11 | 2011-12-14 | 精工爱普生株式会社 | 发光装置及投影仪 |
| CN102290507A (zh) * | 2010-06-11 | 2011-12-21 | 精工爱普生株式会社 | 发光装置及投影仪 |
| CN104953019A (zh) * | 2014-03-27 | 2015-09-30 | 精工爱普生株式会社 | 发光装置的制造方法、发光装置以及投影仪 |
| WO2017009394A1 (en) * | 2015-07-13 | 2017-01-19 | Crayonano As | Nanowires/nanopyramids shaped light emitting diodes and photodetectors |
Also Published As
| Publication number | Publication date |
|---|---|
| US11133444B2 (en) | 2021-09-28 |
| JP2018206861A (ja) | 2018-12-27 |
| CN110679046A (zh) | 2020-01-10 |
| WO2018221352A1 (ja) | 2018-12-06 |
| JP7147132B2 (ja) | 2022-10-05 |
| US20200251629A1 (en) | 2020-08-06 |
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