CN110676155A - Method for detecting shallow defects on surface of polished silicon wafer - Google Patents
Method for detecting shallow defects on surface of polished silicon wafer Download PDFInfo
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- CN110676155A CN110676155A CN201910922971.4A CN201910922971A CN110676155A CN 110676155 A CN110676155 A CN 110676155A CN 201910922971 A CN201910922971 A CN 201910922971A CN 110676155 A CN110676155 A CN 110676155A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
The invention discloses a method for detecting the superficial defect of the surface of a polished silicon wafer, which adopts a fluorescent lamp as a lamp source, wherein the used fluorescent lamp source has certain transmission power and forms a reflection light source at 45-60 degrees with human eyes, and can effectively identify some superficial defects, thereby preventing the occurrence of missed detection and providing a polished silicon wafer with higher quality for customers; because the fluorescent lamp source is a cold-tone lamp source, the light source hardly damages the eyes of a human body; the operation can be carried out by adding the fluorescent lamp source under the existing darkroom condition, the training is simple, and the on-duty detection can be carried out; is simple, safe and effective.
Description
Technical Field
The invention relates to a monocrystalline silicon wafer, in particular to a method for detecting shallow defects on the surface of a polished silicon wafer, which is applicable to the field of silicon wafers.
Background
In recent years, IC chips (Integrated Circuit chips) have been rapidly developed in the direction of high integration, shallow junction, high performance, and low power consumption, and have been increasingly popularized with miniaturization and high precision. The whole IC industry is demanding its product control technology more and more. Thus, the requirement of reaching zero defect is provided for the quality of the polished silicon wafers of the substrate suppliers.
In the actual final darkroom inspection (after pre-cleaning), some defects with shallow surface (500- & ltSUB & gt- & gt 1000 & lt/SUB & gt A) depth, such as dark injuries, mechanical injuries, polishing marks and the like, are difficult to detect by human eyes under a spotlight or a strong light, and certain detection omission risks exist. When the spotlight or the strong light source is directly seen at 60-90 degrees with human eyes, certain light source reflection damage can be caused to the human eyes.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a method for detecting the superficial defects of the surface of a polished silicon wafer, wherein a fluorescent lamp is used as a lamp source, the used fluorescent lamp source has certain transmission power and forms a reflection light source at 45-60 degrees with human eyes, and some superficial defects can be effectively identified. Thereby preventing the occurrence of missing inspection and providing a higher quality polished silicon wafer for customers. Since the fluorescent lamp source is a cold-tone lamp source, the light source has little harm to human eyes. The fluorescent lamp source is additionally arranged under the existing darkroom condition, so that the operation can be carried out, the training is simple, and the on-duty detection can be carried out. Is simple, safe and effective.
The technical scheme of the invention is as follows: a method for detecting shallow defects on the surface of a polished silicon wafer comprises the following specific steps:
step one, cleaning and polishing a silicon wafer;
step two, adding a fluorescent lamp under the darkroom, and requiring the following steps: the color temperature and the brightness are 2000-3000K, and the color gamut is purple red; the power of the fluorescent lamp is 40-50W;
turning on a fluorescent lamp to form an angle of 45-60 degrees with the front surface of the polished silicon wafer, and observing that the front surface of the silicon wafer is shallow in defects; turning on a fluorescent lamp to form an angle of 45-60 degrees with the back surface of the polished silicon wafer, and observing that the back surface of the silicon wafer is shallow at the defect;
and step four, recording the defect type, position, size or length.
Further, the polished silicon wafer is cleaned in the step one by using a mixed solution of ammonia water, hydrogen peroxide and deionized water.
Further, in the second step, the fluorescent lamp is standard-matched and connected with a 220V power supply.
And further, in the third step, a fluorescent lamp is turned on to form an angle of 50 degrees with the front surface of the polished silicon wafer, and the front surface of the polished silicon wafer is observed to be shallow in defects.
And further, in the third step, a fluorescent lamp is turned on to form an angle of 50 degrees with the back surface of the polished silicon wafer, and the back surface of the silicon wafer is observed to be shallow in defects.
The invention has the beneficial effects that:
1. the fluorescent lamp source used by the invention has certain transmission power, and is a reflection light source at 45-60 degrees with human eyes, and can effectively identify some defects with shallow surfaces, such as dark injury, mechanical injury and the like, thereby preventing the occurrence of missed detection and providing a polished silicon wafer with higher quality.
2. Because the fluorescent lamp source is a cold-tone lamp source, the fluorescent lamp source hardly damages the eyes of a human body, and the safety is guaranteed.
3. The fluorescent lamp source is additionally arranged under the existing darkroom condition, so that the operation can be carried out, the training is simple, and the on-duty detection can be carried out. Is simple, safe and effective.
Drawings
FIG. 1 is a picture of polished silicon wafer surface with polishing traces under fluorescent lamp irradiation;
FIG. 2 is a photograph showing scratches on the surface of a polished silicon wafer under the irradiation of a fluorescent lamp;
FIG. 3 is a photograph showing dark scratches on the surface of a polished silicon wafer under fluorescent lamp irradiation.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
Example 1
Taking a polished silicon wafer, and detecting the superficial defect of the surface of the polished silicon wafer, wherein the method comprises the following specific steps:
1. and cleaning the polished silicon wafer by using a mixed solution of ammonia water, hydrogen peroxide and deionized water.
2. A fluorescent lamp is additionally arranged under a darkroom and is matched with a 220V power supply, and the requirements are as follows:
2.1 color temperature and luminance at 2000K (Kelvin temperature), purple red gamut.
2.2 fluorescent lamp power 40 watts.
2.3 standard access 220V power.
3. And turning on the fluorescent lamp to form an angle of 45 degrees with the front surface of the polished silicon wafer, and observing the shallow defect of the front surface of the silicon wafer. The existence of polishing traces on the front surface of the polished silicon wafer can be clearly observed, as shown in FIG. 1.
4. And turning on a fluorescent lamp to form an angle of 45 degrees with the back surface of the polished silicon wafer, and observing the shallow defect of the back surface of the silicon wafer.
5. The defect type, location, size or length is recorded.
Example 2
Taking a polished silicon wafer, and detecting the superficial defect of the surface of the polished silicon wafer, wherein the method comprises the following specific steps:
1. and cleaning the polished silicon wafer by using a mixed solution of ammonia water, hydrogen peroxide and deionized water.
2. A fluorescent lamp is additionally arranged under a darkroom and is matched with a 220V power supply, and the requirements are as follows:
2.1 color temperature and luminance at 3000K (Kelvin temperature), purple red gamut.
2.2 fluorescent lamp power 50 watts.
2.3 standard access 220V power.
3. And turning on a fluorescent lamp to form an angle of 60 degrees with the front surface of the polished silicon wafer, and observing the shallow defects of the front surface of the silicon wafer.
4. And turning on a fluorescent lamp to form an angle of 60 degrees with the back surface of the polished silicon wafer, and observing the shallow defect of the back surface of the silicon wafer. It can be clearly observed that the polished silicon wafer had scratches on the back surface as shown in FIG. 2.
5. The defect type, location, size or length is recorded.
Example 3
Taking a polished silicon wafer, and detecting the superficial defect of the surface of the polished silicon wafer, wherein the method comprises the following specific steps:
1. and cleaning the polished silicon wafer by using a mixed solution of ammonia water, hydrogen peroxide and deionized water.
2. A fluorescent lamp is additionally arranged under a darkroom and is matched with a 220V power supply, and the requirements are as follows:
2.1 color temperature and luminance at 2500K (Kelvin temperature), purple red gamut.
2.2 fluorescent lamp power 45 watts.
2.3 standard access 220V power.
3. And (5) turning on the fluorescent lamp to form an angle of 50 degrees with the front surface of the polished silicon wafer, and observing the shallow defect of the front surface of the silicon wafer.
4. And turning on a fluorescent lamp to form an angle of 50 degrees with the back surface of the polished silicon wafer, and observing the shallow defect of the back surface of the silicon wafer.
5. The defect type, location, size or length is recorded. It can be clearly observed that the polished silicon wafer had a dark flaw as shown in FIG. 3.
The fluorescent lamp source used in the invention has certain transmission power, and can effectively identify some defects with shallow surfaces by a reflection light source at 45-60 degrees with human eyes. Thereby preventing the occurrence of missing inspection and providing a higher quality polished silicon wafer for customers. Since the fluorescent lamp source is a cold-tone lamp source, the light source has little harm to human eyes. The fluorescent lamp source is additionally arranged under the existing darkroom condition, so that the operation can be carried out, the training is simple, and the on-duty detection can be carried out. Is simple, safe and effective.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (5)
1. A method for detecting the superficial defects of the surface of a polished silicon wafer is characterized by comprising the following steps: the method comprises the following specific steps:
step one, cleaning and polishing a silicon wafer;
step two, adding a fluorescent lamp under the darkroom, and requiring the following steps: the color temperature and the brightness are 2000-3000K, and the color gamut is purple red; the power of the fluorescent lamp is 40-50W;
turning on a fluorescent lamp to form an angle of 45-60 degrees with the front surface of the polished silicon wafer, and observing that the front surface of the silicon wafer is shallow in defects; turning on a fluorescent lamp to form an angle of 45-60 degrees with the back surface of the polished silicon wafer, and observing that the back surface of the silicon wafer is shallow at the defect;
and step four, recording the defect type, position, size or length.
2. The method of claim 1, wherein the step of detecting the shallow defects on the surface of the polished silicon wafer comprises the steps of: and cleaning the polished silicon wafer in the step one by using a mixed solution of ammonia water, hydrogen peroxide and deionized water.
3. The method of claim 1, wherein the step of detecting the shallow defects on the surface of the polished silicon wafer comprises the steps of: and in the second step, the fluorescent lamp is standard-matched and connected with a 220V power supply.
4. The method of claim 1, wherein the step of detecting the shallow defects on the surface of the polished silicon wafer comprises the steps of: and in the third step, turning on the fluorescent lamp to form an angle of 50 degrees with the front surface of the polished silicon wafer, and observing that the front surface of the silicon wafer is shallow in defects.
5. The method of claim 1, wherein the step of detecting the shallow defects on the surface of the polished silicon wafer comprises the steps of: and in the third step, a fluorescent lamp is turned on to form an angle of 50 degrees with the back surface of the polished silicon wafer, and the back surface of the silicon wafer is observed to be shallow in defects.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910922971.4A CN110676155B (en) | 2019-09-27 | 2019-09-27 | Method for detecting shallow defects on surface of polished silicon wafer |
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| CN201910922971.4A CN110676155B (en) | 2019-09-27 | 2019-09-27 | Method for detecting shallow defects on surface of polished silicon wafer |
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| CN110676155B CN110676155B (en) | 2021-12-10 |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1941312A (en) * | 2005-09-27 | 2007-04-04 | 力晶半导体股份有限公司 | Chip checking system and method |
| CN101484775A (en) * | 2006-07-04 | 2009-07-15 | 株式会社尼康 | Surface inspection device |
| CN202502055U (en) * | 2012-04-16 | 2012-10-24 | 苏州中导光电设备有限公司 | Surface defect and contamination detection equipment for solar polycrystalline silicon cell |
| CN103038603A (en) * | 2010-07-30 | 2013-04-10 | 克拉-坦科股份有限公司 | Apparatus and method for three dimensional inspection of wafer saw marks |
| JP2017062157A (en) * | 2015-09-24 | 2017-03-30 | 株式会社Sumco | Epitaxial wafer surface inspection device and epitaxial wafer surface inspection method using the same |
| CN107667287A (en) * | 2015-06-03 | 2018-02-06 | 美题隆公司 | Automatic defect detection and mapping for optical filter |
| CN109187580A (en) * | 2018-11-01 | 2019-01-11 | 上海超硅半导体有限公司 | A kind of detection method of silicon polished defect |
| CN112198162A (en) * | 2019-07-08 | 2021-01-08 | 西进商事株式会社 | Appearance inspection device |
-
2019
- 2019-09-27 CN CN201910922971.4A patent/CN110676155B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1941312A (en) * | 2005-09-27 | 2007-04-04 | 力晶半导体股份有限公司 | Chip checking system and method |
| CN101484775A (en) * | 2006-07-04 | 2009-07-15 | 株式会社尼康 | Surface inspection device |
| CN103038603A (en) * | 2010-07-30 | 2013-04-10 | 克拉-坦科股份有限公司 | Apparatus and method for three dimensional inspection of wafer saw marks |
| CN202502055U (en) * | 2012-04-16 | 2012-10-24 | 苏州中导光电设备有限公司 | Surface defect and contamination detection equipment for solar polycrystalline silicon cell |
| CN107667287A (en) * | 2015-06-03 | 2018-02-06 | 美题隆公司 | Automatic defect detection and mapping for optical filter |
| JP2017062157A (en) * | 2015-09-24 | 2017-03-30 | 株式会社Sumco | Epitaxial wafer surface inspection device and epitaxial wafer surface inspection method using the same |
| CN109187580A (en) * | 2018-11-01 | 2019-01-11 | 上海超硅半导体有限公司 | A kind of detection method of silicon polished defect |
| CN112198162A (en) * | 2019-07-08 | 2021-01-08 | 西进商事株式会社 | Appearance inspection device |
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Effective date of registration: 20210208 Address after: 200444 Building 1, 181 Shanlian Road, Baoshan District, Shanghai Applicant after: Shanghai Zhongxin wafer semiconductor technology Co.,Ltd. Address before: 200444, No. 181, Lian Lian Road, Baoshan City Industrial Park, Shanghai, Baoshan District Applicant before: SHANGHAI SHENHE THERMO-MAGNETICS ELECTRONICS Co.,Ltd. |
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