CN109187580A - A kind of detection method of silicon polished defect - Google Patents
A kind of detection method of silicon polished defect Download PDFInfo
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- CN109187580A CN109187580A CN201811296337.6A CN201811296337A CN109187580A CN 109187580 A CN109187580 A CN 109187580A CN 201811296337 A CN201811296337 A CN 201811296337A CN 109187580 A CN109187580 A CN 109187580A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
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Abstract
The invention discloses a kind of detection methods of silicon wafer polished silicon wafer defect, the detection method includes: in dark room conditions, by condensation light source vertical irradiation in the silicon wafer polished silicon wafer of pre-cleaning, to detect silicon wafer polished silicon wafer defect, wherein the illumination of condensation light source is higher than 400,000 Le；The detection method is simple and easy, and does not need expensive professional equipment, greatly reduces production cost；Effect is intuitive, can directly be identified by naked eyes；Training cost is low, quick, can come into operation immediately, therefore is suitable for silicon wafer field.
Description
Technical field
The present invention is monocrystalline silicon piece research field, is related to a kind of detection method of silicon polished defect.
Background technique
It as the silicon wafer of IC substrate, needs after the cutting of silicon single crystal rod, by a large amount of physics, chemistry, Yi Jire
Processing is to manufacture.Silicon single crystal rod is generally by making seed crystal be impregnated in high-purity in silica crucible (99.9999999% or more) melting
Silicon in and draw and mention and obtain the Czochralski method (vertical pulling method --- hereinafter referred to as " CZ method ") of monocrystalline growth, but in monocrystalline
The microscopic defect for being referred to as Grown-in defect can be introduced when incubation in crystallization.
(drawing mentions axis side to Temperature Distribution in the monocrystalline after drawing speed-raising degree and solidification when the Grown-in defect and monocrystalline are bred as
To crystallization in temperature gradient) it is related, to be referred to as the size of COP (Crystal Originated Particle) etc. for 0.1
~0.3 μm or so of empty type is aggregated defect, and the referred to as size of dislocation cluster (Dislocation Cluster) is 10 μm or so
The forms such as defect that are formed of slight misalignment be present in monocrystalline.
COP is the factor for causing the oxidation film resistance to pressure at initial stage to decline, and dislocation cluster is also the device for causing to be formed on
The reason of bad characteristic.
In addition IC silicon wafer quality of finish also directly affects breakdown characteristics, interfacial state and minority carrier life time, to MOS, CCD etc.
Surface device influences bigger.It is one of important parameter of high quality polished that silicon wafer, which polishes mist, especially to silicon wafer essence
The evaluation for throwing quality is more important.
In addition IC is rapidly developed to highly integrated, shallow junction, high performance direction in recent years, with miniaturization, high precision int
Demand, advanced triumphantly toward the direction 5nm according to the strategical planning IC line width of Moore's Law and major IC manufacturer；Entire IC is produced
Industry requires the control technology of COP in the requirement of silicon wafer quality of finish and processing procedure higher and higher therefore how efficient and convenient
Detect that more stringent requirements are proposed by silicon wafer quality of finish defect (polishing mist) and silicon wafer COP.
Whether there is COP to test silicon wafer, carries out ensuring Silicon Wafer using the presence or absence of the number of COP and pattern
The qualified or not judgement of piece；One of detection method as COP has referred to as copper deposition method (copper decorative method).This is a kind of utilization
When silicon wafer surface forms insulating film (oxidation film), there are the position oxidation films of COP can become this inhomogenous phenomenon
Method.This method applies external voltage, in above-mentioned silicon wafer surface after wafer surface forms the oxidation film of specific thickness
The position COP copper is precipitated while oxide film breakdown；Pass through the copper or transmission electron microscope of the precipitation that detects by an unaided eye
(TEM), scanning electron microscope (SEM) is observed to detect COP.But the detection method of such COP is excessively complicated cumbersome
And expensive professional equipment is needed to be suitable for analysis and research, daily production large batch of for Silicon Wafer factory producing line is not appropriate for pushing away
Extensively.
Whether there is polishing mist to test silicon wafer polishing piece, especially when testing by particle detections board, such as
Fruit silicon wafer polishing piece surface polishing mist is serious, then the reflected particle of silicon wafer polishing piece institute is extremely on the high side, for
Tester table its to be difficult to distinguish " particle " that these are tested out be COP, polishing mist or not cleaned up really
Grain.
Although the detection of COP can pass through particle test instrument (KLA- after excluding to polish mist in silicon wafer processing procedure
Tencor it) realizes.But this can undoubtedly occupy limited particle test production capacity and the expensive test of consumption on foot in silicon wafer processing procedure
The Acceptable life of board influences silicon wafer factory shipment rate and increases the expense of silicon wafer factory test equipment maintenance
With.
The polishing of silicon wafer is divided into rough polishing, fine polishing, essence and throws, and the purpose of rough polishing is the damage of height caused by grinding and distortion
The efficient removal of layer, and reach certain flatness and finish；The main task of fine polishing is generation during removal rough polishing
Micro-damage layer, realize surface best bright finish；The effect that essence is thrown is further fine polishing and chemical stripping, only only nanometer
Grade removal amount further improves the finish on silicon wafer polishing piece surface.The producing cause of polishing mist is that fine polishing/essence throwing can not
The silicon wafer surface roughness for removing the damaging layer that has after silicon wafer rough polishing before the deadline and showing
(haze) excessive.
CN10466876A discloses a kind of COP evaluation method of monocrystalline silicon piece, and the evaluation method is will be as evaluation pair
The evaluation region of the chip of elephant is divided along radial direction with concentric circles, and COP number of the evaluation region being respectively split to form is set
Upper limit value, carry out the qualified or not judgement of monocrystalline silicon piece, on the basis of the upper limit value so as to quantitative and objectively evaluate
COP can give correct judgement under specific benchmark；This method be based on quantitative specific pedestal method, but its
Detection method is complicated, is unfavorable for industrial application.
CN1815205A discloses a kind of test device and its test method using Cu induction surface COP of silicon sheet, belongs to
Detection method technical field.It mainly first by tested silicon chip, removes silicon chip back side oxidation film, and chemical reaction groove is built-in
Full methanol solution, and it is sequentially placed the first copper sheet, silicon wafer, silica membrane, the second copper sheet, electrode, then lid is covered tightly,
Electrode is connect with the second copper sheet, and electrode passes through wire connected power positive terminal；First copper sheet passes through wire connected power negative pole end；
And lead to direct current between the first, second two pieces of copper sheets with DC power supply；Then methanol solution chemically is discharged in reactive tank, takes
Silicon wafer out measures Defect quantity after being dried；This method has preferable sensitivity and retractility, but it is detected
Method is complicated, is unfavorable for industrial applications.
Therefore, the rapid detection method for developing a kind of primary lattice microdefect of silicon wafer body hole type is highly desirable.
Summary of the invention
The purpose of the present invention is to provide a kind of detection methods of silicon wafer defect, and the detection method is simple and easy, and
Do not need expensive professional equipment, greatly reduce production cost, and effect is intuitive, can directly be identified by naked eyes, train at
This is low, quick, can come into operation immediately, therefore is suitable for silicon wafer field.
To achieve this purpose, the present invention adopts the following technical scheme:
The purpose of the present invention is to provide a kind of detection method of silicon wafer defect, the detection method includes: in darkroom
In environment, by condensation light source vertical irradiation on silicon polished, to detect silicon polished defect.
Detection method provided by the invention is simple and easy, is easy to implement；It does not need to drop significantly using expensive professional equipment
Low testing cost；Detection effect is intuitive, can pass through direct visual perception；Training cost is low, quick, and can put into immediately makes
With suitable for industrial producing line large-scale application.
In the present invention, the illumination of the condensation light source is higher than 400,000 Le, such as 400,000 Le, 500,000 Le, 600,000 Le, 700,000
Le, 800,000 Le, 900,000 Le, 1,000,000 Le, 2,000,000 Le, 3,000,000 Le etc., preferably 400,000-60 ten thousand Le.
It is higher than 400,000 Le that the present invention, which selects illumination, it is ensured that can be received on silicon polished unit area enough
Luminous flux；It is preferred that ten thousand Le of 40-60, can guarantor unit's area can receive suitable luminous flux, can accurately judge silicon
The defect of polished silicon wafer, but avoidable illumination is too high, and a degree of injury can be caused to human eye；If illumination is lower than 400,000 Le, single
The upper received luminous flux of plane product is less, can not accurately judge silicon polished defect.
In the present invention, the silicon polished defect is the primary lattice microdefect of crystal cavity type or polishing mist defect.
In the present invention, the primary lattice microdefect of crystal cavity type or polishing mist defect are that two kinds of comparisons are normal in silicon polished
The defect seen, the specific gravity accounted for is also relatively high, first uses detection method provided by the invention to crystalline substance silicon wafer in the industrial production
The primary lattice microdefect of body hole type or polishing mist defect are detected, silicon polished to be listed in if there is the two defect
Defective products；If being judged without both defects, then with corresponding instrument, the maintenance expense to pertinent instruments can be reduced
With, it is also easy training operating personnel, it can be in silicon wafer factory producing line large-scale promotion application.
Detection method provided by the invention is vertically shone in the primary lattice microdefect of detection silicon wafer body hole type in spotlight
It penetrates down, if the colored light reflection that discovery silicon wafer center has plate-like close-packed lattice to be distributed, illustrates that silicon wafer center has empty type
Primary lattice microdefect；If illustrating outside silicon wafer it was found that there is the colored light reflection of cyclic annular close-packed lattice distribution in silicon wafer periphery
There is empty type primary lattice microdefect week；If it was found that silicon wafer center has disk ring shape close-packed lattice point with along silicon wafer periphery simultaneously
The colored light of cloth reflects, then illustrates that silicon wafer is integrated with the primary lattice microdefect of empty type；If it was found that silicon wafer surface has mist
Spot, then illustrating silicon wafer surface locally has micro- shallow damage defect；If the micro- shallow damage defect of silicon wafer overall surface simultaneously generates light
Diffusing scattering feels to be mist to naked eyes, then illustrates that silicon wafer is integrally defective；Pass through judgement, it can be deduced that deposit with batch is silicon polished
Common problem, analyze common problem, adjusting process parameter, thus realize to technique production carry out analysis feedback.
In the present invention, the single cavity blemish of the primary lattice microdefect of crystal cavity type is more than 0.15 μm, such as
0.15 μm, 0.2 μm, 0.22 μm, 0.25 μm, 0.30 μm, 0.32 μm, 0.35 μm, 0.40 μm, 0.45 μm, 0.50 μm etc..
In the present invention, the single cavity blemish of the primary lattice microdefect of crystal cavity type be more than 0.15 μm could be by human eye
See, if being lower than this size, human eye is just not easy to distinguish.
In the present invention, the color of the condensation light source irradiation light is white or yellow.
In the present invention, the color for selecting condensation light source irradiation light is white or yellow, is radiated on silicon polished, more
It is easy to happen reflection or scattering, test effect is preferable；, blue such as red according to other colors, purple and green, meeting
It affects to test result, causes testing result inaccurate.
In the present invention, the condensation light source is spotlight.
Spotlight is selected in the present invention, it is at low cost, it is easier to obtain compared to other test equipments, is suitable for industrial production
It uses.
In the present invention, the spotlight is halogen lamp, hernia lamp or LED light.
In the present invention, the halogen lamp is iodine-tungsten lamp or bromine tungsten filament lamp.
In the present invention, the pre-cleaning is the mixed liquor with ammonium hydroxide, hydrogen peroxide and deionization ultrapure water to silicon polishing
Piece is cleaned in advance.
The present invention is cleaned to silicon polished before testing, can exclude that silicon polishing face surface does not clean up
Grain, is detected, it is possible to reduce detection error, the silicon polished defect of accurate judgement are crystal cavity type primary crystal actually again later
Lattice microdefect or polishing mist defect.
In the present invention, the silicon wafer with a thickness of 100-1000 μm, such as 100 μm, 200 μm, 300 μm, 400 μm,
500 μm, 600 μm, 700 μm, 800 μm, 900 μm, 1000 μm etc..
In the present invention, the silicon wafer is silicon wafer polishing piece.
In the present invention, the detection method includes: in dark room conditions, is more than 400,000 Le and irradiation light color by illumination
For yellow or white spotlight vertical irradiation with a thickness of 100-1000 μm and by advance with ammonium hydroxide, hydrogen peroxide and go from
The silicon wafer polishing on piece of the mixed liquor cleaning of sub- ultrapure water, to detect silicon polished polishing mist defect or single empty scarce
It falls into more than the primary lattice microdefect of 0.15 μm of empty type.
Compared with the existing technology, the invention has the following advantages:
Detection method provided by the invention is simple and easy, is easy to implement；It does not need to drop significantly using expensive professional equipment
Low testing cost；Detection effect is intuitive, can pass through direct visual perception；Training cost is low, quick, and can put into immediately makes
With；It can quickly determine whether silicon wafer has the primary lattice microdefect of empty type or polishing mist defect, be suitable for industrial producing line
Large-scale application.
Specific embodiment
The technical scheme of the invention is further explained by means of specific implementation.Those skilled in the art should be bright
, the described embodiments are merely helpful in understanding the present invention, should not be regarded as a specific limitation of the invention.
Embodiment 1
In the present embodiment, a kind of detection method of silicon polished defect is provided, the detection method is as follows:
(1) mixed liquor of 100 silicon wafer polishing piece ammonium hydroxide to be measured, hydrogen peroxide and deionization ultrapure water is cleaned, is done
The dry silicon wafer polishing piece for obtaining any surface finish；
(2) in dark room conditions, the silicon wafer polishing piece sucking pen of any surface finish that step (1) is obtained is by any surface finish
Silicon wafer polishing piece be placed on silicon wafer round tray, adjust silicon wafer and bromine tungsten filament lamp position, make 500,000 Le of illumination and
Irradiating light color is the bromine tungsten filament lamp vertical irradiation of dark yellow in the silicon wafer surface with a thickness of 300 μm, is then detected by an unaided eye
Judge silicon polished whether defective.
It is observed visually: thering are 36 silicon wafer polishing pieces plate-like, ring-type, disk ring shape or whole occur in 100 samples to be tested
The close-packed lattice in face is distributed colored light reflection, and it is more than 0.15 μm that illustrating, which has 36 silicon wafer polishing pieces to have single cavity blemish,
The primary lattice microdefect of crystal cavity type；There are 55 silicon wafer polishing pieces mist spot or mist partly or wholly occur, illustrates there are 55
Silicon wafer polishing piece has polishing mist defect；Remaining 9 do not occur colored light reflection, mist and mist spot, and illustrating this 9, there is no single
A size is more than 0.15 μm of the primary lattice microdefect of crystal cavity type and polishing mist defect.
Identical 100 polished silicon wafer scanning electron microscope and particle detections board lack size at 0.15 μm or more
It is trapped into row test analysis, discovery there are 36 to have the primary lattice microdefect of crystal cavity type, and 55 have polishing mist defect, and 9 do not have
Single cavity size is more than 0.15 μm of the primary lattice microdefect of crystal cavity type and polishing mist defect；The opposite of testing result is missed
Difference is 0%, it was demonstrated that detection method of the invention is accurate and reliable.
Embodiment 2
In the present embodiment, a kind of detection method of silicon polished defect is provided, the detection method is as follows:
(1) mixed liquor of 100 silicon wafer polishing piece ammonium hydroxide to be measured, hydrogen peroxide and deionization ultrapure water is cleaned, is done
The dry silicon wafer polishing piece for obtaining any surface finish；
(2) in dark room conditions, the silicon wafer polishing piece sucking pen of any surface finish that step (1) is obtained is by any surface finish
Silicon wafer polishing piece be placed on silicon wafer round tray, adjust silicon wafer and bromine tungsten filament lamp position, make 400,000 Le of illumination and
Irradiating light color is the bromine iodine lamp vertical irradiation of dark yellow in the silicon wafer surface with a thickness of 600 μm, is then detected by an unaided eye
Judge silicon polished whether defective.
It is observed visually: thering are 40 silicon wafer polishing pieces plate-like, ring-type, disk ring shape or whole occur in 100 samples to be tested
The close-packed lattice in face is distributed colored light reflection, and it is more than 0.15 μm that illustrating, which has 40 silicon wafer polishing pieces to have single cavity blemish,
The primary lattice microdefect of crystal cavity type；There are 25 silicon wafer polishing pieces mist spot or mist partly or wholly occur, illustrates there are 25
Silicon wafer polishing piece has polishing mist defect；Remaining 35 do not occur colored light reflection, mist and mist spot, illustrate that this 35 are not present
Single size is more than 0.15 μm of the primary lattice microdefect of crystal cavity type and polishing mist defect.
Identical 100 polished silicon wafer scanning electron microscope and particle detections board lack size at 0.15 μm or more
It is trapped into row test analysis, discovery there are 40 to have the primary lattice microdefect of crystal cavity type, and 25 have polishing mist defect, and 35 do not have
Single cavity size is more than 0.15 μm of the primary lattice microdefect of crystal cavity type and polishing mist defect；The opposite of testing result is missed
Difference is 0%, it was demonstrated that detection method of the invention is accurate and reliable.
Embodiment 3
In the present embodiment, a kind of detection method of silicon polished defect is provided, the detection method is as follows:
(1) mixed liquor of 100 silicon wafer polishing piece ammonium hydroxide to be measured, hydrogen peroxide and deionization ultrapure water is cleaned, is done
The dry silicon wafer polishing piece for obtaining any surface finish；
(2) in dark room conditions, the silicon wafer polishing piece sucking pen of any surface finish that step (1) is obtained is by any surface finish
Silicon wafer polishing piece be placed on silicon wafer round tray, adjust silicon wafer and bromine tungsten filament lamp position, make 600,000 Le of illumination and
Irradiating light color is white LED vertical irradiation in the silicon wafer surface with a thickness of 700 μm, then detects by an unaided eye and is sentenced
Break silicon polished whether defective.
It is observed visually: thering are 28 silicon wafer polishing pieces plate-like, ring-type, disk ring shape or whole occur in 100 samples to be tested
The close-packed lattice in face is distributed colored light reflection, and it is more than 0.15 μm that illustrating, which has 28 silicon wafer polishing pieces to have single cavity blemish,
The primary lattice microdefect of crystal cavity type；There are 34 silicon wafer polishing pieces mist spot or mist partly or wholly occur, illustrates there are 34
Silicon wafer polishing piece has polishing mist defect；Remaining 38 do not occur colored light reflection, mist and mist spot, illustrate that this 38 are not present
Single size is more than 0.15 μm of the primary lattice microdefect of crystal cavity type and polishing mist defect.
Identical 100 polished silicon wafer scanning electron microscope and particle detections board lack size at 0.15 μm or more
It is trapped into row test analysis, discovery there are 28 to have the primary lattice microdefect of crystal cavity type, and 34 have polishing mist defect, and 38 do not have
Single cavity size is more than 0.15 μm of the primary lattice microdefect of crystal cavity type and polishing mist defect；The opposite of testing result is missed
Difference is 0%, it was demonstrated that detection method of the invention is accurate and reliable.
Embodiment 4
In the present embodiment, a kind of detection method of silicon polished defect is provided, the detection method is as follows:
(1) mixed liquor of 100 silicon wafer polishing piece ammonium hydroxide to be measured, hydrogen peroxide and deionization ultrapure water is cleaned, is done
The dry silicon wafer polishing piece for obtaining any surface finish；
(2) in dark room conditions, the silicon wafer polishing piece sucking pen of any surface finish that step (1) is obtained is by any surface finish
Silicon wafer polishing piece be placed on silicon wafer round tray, adjust silicon wafer and bromine tungsten filament lamp position, make 1,000,000 Le of illumination and
Irradiating light color is white LED vertical irradiation in the silicon wafer surface with a thickness of 1000 μm, and then detect by an unaided eye progress
Judge silicon polished whether defective.
It is observed visually: thering are 22 silicon wafer polishing pieces plate-like, ring-type, disk ring shape or whole occur in 100 samples to be tested
The close-packed lattice in face is distributed colored light reflection, and it is more than 0.15 μm that illustrating, which has 22 silicon wafer polishing pieces to have single cavity blemish,
The primary lattice microdefect of crystal cavity type；There are 37 silicon wafer polishing pieces mist spot or mist partly or wholly occur, illustrates there are 37
Silicon wafer polishing piece has polishing mist defect；Remaining 41 do not occur colored light reflection, mist and mist spot, illustrate that this 41 are not present
Single size is more than 0.15 μm of the primary lattice microdefect of crystal cavity type and polishing mist defect.
Identical 100 polished silicon wafer scanning electron microscope and particle detections board lack size at 0.15 μm or more
It is trapped into row test analysis, discovery there are 23 to have the primary lattice microdefect of crystal cavity type, and 37 have polishing mist defect, and 40 do not have
Single cavity size is more than 0.15 μm of the primary lattice microdefect of crystal cavity type and polishing mist defect；The opposite of testing result is missed
Difference is 1%, it was demonstrated that detection method of the invention is accurate and reliable.
Comparative example 1
Difference with embodiment 1 is only that the illumination of bromine tungsten filament lamp is 200,000 Le, remaining condition and detection method with implementation
Example 1 is identical.
The testing result error of this comparative example is 50%, illustrates to be lower than 200,000 Le when the illumination of bromine tungsten filament lamp, then testing result
Biggish error is had, intensity of illumination is too low cannot effectively to detect the lesser empty primary lattice microdefect of type, and illumination is strong
The COP that degree more low energy is seen is fewer, testing result inaccuracy.
Comparative example 2
Difference with embodiment 1, which is only that, replaces bromine tungsten filament lamp with light diffuser, remaining condition and detection method with embodiment 1
It is identical.
The testing result error of this comparative example is 90%, and light source is scattering light, will lead to dark room conditions and is destroyed, veiling glare mistake
It is more, the excessive light reflection that can not see target area clearly is interfered, illustrates that then testing result has biggish when light source is light diffuser
Error, testing result inaccuracy.
Comparative example 3
Difference with embodiment 1 is only that and do not clean before detection to silicon polished, remaining condition and detection method
It is same as Example 1.
The testing result error of this comparative example is 100%, and silicon wafer polished silicon wafer surface can be covered with bulky grain if not cleaning, complete
All standing surface can not see COP and polishing mist, illustrate not clean to silicon polished before detection, then testing result has
Biggish error, testing result inaccuracy.
Comparative example 4
Difference with embodiment 1 is only that the color of irradiation light is red, rather than original dark yellow, remaining condition and inspection
Survey method is same as Example 1.
The testing result error of this comparative example is that the reflected light of 30%, COP is also kermesinus, and some small COP can not
It is too clear, illustrate the color of irradiation light for red, then testing result has biggish error, testing result inaccuracy.
Comparative example 5
Difference with embodiment 1 is only that the color of irradiation light is blue, rather than original dark yellow, remaining condition and inspection
Survey method is same as Example 1.
The testing result error of this comparative example is 20%, and light blue mist spot can be presented in partially polished mist reflected light, illustrate
The color of irradiation light is blue, then testing result has biggish error, testing result inaccuracy.
Comparative example 6
Difference with embodiment 1 is only that be carried out not in dark room conditions, remaining condition and detection method with embodiment 1
It is identical.
This comparative example is not detected in dark room conditions, then is unable to get testing result.
The Applicant declares that the foregoing is merely a specific embodiment of the invention, but protection scope of the present invention not office
It is limited to this, it should be clear to those skilled in the art, any to belong to those skilled in the art and take off in the present invention
In the technical scope of dew, any changes or substitutions that can be easily thought of, and all of which fall within the scope of protection and disclosure of the present invention.
Claims (10)
1. a kind of detection method of silicon polished defect, which is characterized in that the detection method includes: to incite somebody to action in dark room conditions
Condensation light source vertical irradiation pre-cleaning it is silicon polished on, to detect silicon polished defect, the wherein photograph of condensation light source
Degree is higher than 400,000 Le.
2. detection method according to claim 1, which is characterized in that the illumination of the condensation light source is 400,000-60 ten thousand Le.
3. detection method according to claim 1 or 2, which is characterized in that the silicon polished defect is crystal cavity type
Primary lattice microdefect or polishing mist defect.
4. detection method according to claim 3, which is characterized in that the list of the primary lattice microdefect of crystal cavity type
A cavity blemish is more than 0.15 μm.
5. detection method according to claim 1-4, which is characterized in that the color of the condensation light source irradiation light
For white or yellow；
Preferably, the condensation light source is spotlight.
6. detection method according to claim 5, which is characterized in that the spotlight is halogen lamp, hernia lamp or LED light
In any one；
Preferably, the halogen lamp is iodine-tungsten lamp or bromine tungsten filament lamp.
7. detection method according to claim 1-6, which is characterized in that the pre-cleaning is with ammonium hydroxide, double
The mixed liquor of oxygen water and deionization ultrapure water cleans in advance to silicon polished.
8. detection method according to claim 1-7, which is characterized in that the silicon wafer with a thickness of 100-
1000μm。
9. detection method according to claim 1-8, which is characterized in that the silicon wafer is silicon wafer polishing
Piece.
10. -9 described in any item detection methods according to claim 1, which is characterized in that the detection method includes: in darkroom
In environment, by illumination be more than 400,000 Le and irradiation light color is yellow or white spotlight vertical irradiation with a thickness of 100-
1000 μm and by the silicon wafer polishing on piece cleaned with the mixed liquor of ammonium hydroxide, hydrogen peroxide and deionization ultrapure water in advance, from
And detect silicon polished polishing mist defect or single cavity blemish is more than 0.15 μm of the primary lattice microdefect of empty type.
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| CN109668532A (en) * | 2019-01-25 | 2019-04-23 | 北京航天时代激光导航技术有限责任公司 | A kind of substrate surface detection method and device |
| CN110412055A (en) * | 2019-05-06 | 2019-11-05 | 天津大学 | A kind of lens white haze defect inspection method based on multiple light courcess dark-ground illumination |
| CN110676155A (en) * | 2019-09-27 | 2020-01-10 | 上海申和热磁电子有限公司 | Method for detecting shallow defects on surface of polished silicon wafer |
| CN112461861A (en) * | 2020-12-09 | 2021-03-09 | 中国电子科技集团公司第四十六研究所 | Method for evaluating surface quality of directly bonded silicon single crystal polished wafer |
| CN113325004A (en) * | 2021-07-07 | 2021-08-31 | 上海超硅半导体股份有限公司 | Method and device for detecting surface defects of semiconductor wafer |
| CN113758641A (en) * | 2021-08-26 | 2021-12-07 | 河北同光晶体有限公司 | Method and device for detecting defects of silicon carbide wafer penetrating pipeline |
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| CN109668532A (en) * | 2019-01-25 | 2019-04-23 | 北京航天时代激光导航技术有限责任公司 | A kind of substrate surface detection method and device |
| CN110412055A (en) * | 2019-05-06 | 2019-11-05 | 天津大学 | A kind of lens white haze defect inspection method based on multiple light courcess dark-ground illumination |
| CN110676155A (en) * | 2019-09-27 | 2020-01-10 | 上海申和热磁电子有限公司 | Method for detecting shallow defects on surface of polished silicon wafer |
| CN110676155B (en) * | 2019-09-27 | 2021-12-10 | 上海中欣晶圆半导体科技有限公司 | Method for detecting shallow defects on surface of polished silicon wafer |
| CN112461861A (en) * | 2020-12-09 | 2021-03-09 | 中国电子科技集团公司第四十六研究所 | Method for evaluating surface quality of directly bonded silicon single crystal polished wafer |
| CN112461861B (en) * | 2020-12-09 | 2022-12-30 | 中国电子科技集团公司第四十六研究所 | Method for evaluating surface quality of directly bonded silicon single crystal polished wafer |
| CN113325004A (en) * | 2021-07-07 | 2021-08-31 | 上海超硅半导体股份有限公司 | Method and device for detecting surface defects of semiconductor wafer |
| CN113758641A (en) * | 2021-08-26 | 2021-12-07 | 河北同光晶体有限公司 | Method and device for detecting defects of silicon carbide wafer penetrating pipeline |
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