CN110660896A - LED packaging structure and packaging method thereof - Google Patents

LED packaging structure and packaging method thereof Download PDF

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Publication number
CN110660896A
CN110660896A CN201911015875.8A CN201911015875A CN110660896A CN 110660896 A CN110660896 A CN 110660896A CN 201911015875 A CN201911015875 A CN 201911015875A CN 110660896 A CN110660896 A CN 110660896A
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layer
nitrogen
led
metal layer
plating
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CN110660896B (en
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侯立东
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Fujian LONGYE Photoelectric Technology Co.,Ltd.
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侯立东
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

The LED packaging structure adopts nitrogen plasma to process the upper surface of a plating layer so as to form a rough nitrogen processing layer, the nitrogen processing layer has poor wettability, the climbing of a spacing material (namely an insulating resin material) can be prevented, and the reliability of electric connection is ensured. In addition, the wiring metal layer is provided with a bowl-shaped side surface, so that the spacing material is embedded between the plating layer and the heat dissipation substrate, and the purposes of preventing stripping and further preventing climbing can be realized on the basis of ensuring the volume of the spacing groove filled with the spacing material.

Description

LED packaging structure and packaging method thereof
Technical Field
The invention relates to the field of photoelectric device packaging test, in particular to an LED packaging structure and a manufacturing method thereof.
Background
Most of the existing LED package structures are COB structures, that is, chip-on-board structures, wherein wiring layers are often formed on a substrate for electrical connection, and in order to ensure electrical reliability between the wiring layers, an insulating material is often filled between the plating layers to increase electrical insulation performance. As shown in fig. 12, a wiring layer 2 is disposed on a substrate 1, the wiring layer 2 is a plurality of discrete island structures, wherein a plating layer 3 is plated on a surface of the wiring layer 2, the plating layer 3 is generally made of nickel, gold, silver, or the like, a back surface of an LED chip 6 is soldered on the plating layer 3 through a solder layer 7, a light exit surface electrode of the LED chip 6 is soldered on the plating layer 3 through a bonding wire 8 to achieve electrical connection, and the soldered portion has a soldering point 9. Since the plated layer 3 has wettability, the resin insulation material 4 filled at the gap climbs to the upper surface of the plated layer 3, as shown by the climbing portion 5 of fig. 12, which may cause the cold joint of the bonding wire 8, and the bonding force of the solder layer 7 to the plated layer 3 is also affected.
Disclosure of Invention
Based on solving the above problems, the present invention provides an LED packaging method, which includes the following steps:
(1) providing a heat dissipation substrate, and pressing a photoresist resin layer on the heat dissipation substrate;
(2) patterning the photoresist resin layer by using a photoetching technology to form a plurality of discrete openings;
(3) baking the photoresist resin layer to enable the side wall of the opening to be bowl-shaped;
(4) filling a metal material in the opening to form a metal layer in a conformal manner;
(5) removing the photoresist resin layer to enable the metal layer to be provided with a plurality of spacing grooves;
(6) forming a plating layer on the upper surface and the side surface of the metal layer;
(7) performing nitrogen plasma bombardment on the plating layer to form a nitrogen treatment layer on the upper surface;
(8) filling a spacing material in the spacing groove;
(9) and welding a plurality of LED chips on the nitrogen treatment layer through a solder layer, and electrically connecting the LED chips with the metal layer.
According to an embodiment of the present invention, the temperature of the baking is greater than the softening temperature of the light-blocking resin layer, for example greater than 80 ℃.
According to an embodiment of the present invention, the method for filling the metal in the opening includes electroplating, electroless plating, vapor deposition or sputtering.
According to an embodiment of the invention, in step (7), the plasma bombardment of nitrogen on the coating specifically comprises: and under the nitrogen environment, performing plasma ionization on nitrogen and performing plasma bombardment perpendicular to the upper surface, and forming a nitrogen treatment layer on the upper surface of the metal layer, wherein the nitrogen treatment layer has a rough surface.
According to an embodiment of the present invention, the step (9) specifically includes: and welding the lower electrode of the LED chip on the metal layer through a solder layer, and welding the upper electrode of the LED chip on the metal layer through a bonding wire.
The invention also provides an LED packaging structure, which is prepared by the LED packaging method and specifically comprises the following steps:
a heat-dissipating substrate;
the side surface of the metal layer is bowl-shaped and is in island-shaped isolated distribution through the plurality of spacing grooves;
a plating layer covering an upper surface and a side surface of the metal layer, wherein the upper surface is bombarded by nitrogen plasma, and a nitrogen treatment layer is formed on the upper surface;
the spacing material is filled in the spacing groove, and the height of the spacing material is lower than that of the nitrogen treatment layer;
and the LED chips are welded on the nitrogen treatment layer through a solder layer and are electrically connected with the metal layer.
According to an embodiment of the present invention, an alloy layer of solder and a plating layer is formed between the solder layer and the nitrogen-treated layer.
According to an embodiment of the present invention, the wettability of the nitrogen treatment layer is inferior to that of the plating layer of the side face.
According to an embodiment of the present invention, the top surface of the spacer material is lower than the nitrogen treatment layer, and the top surface of the spacer material is a curved surface having a curvature.
According to an embodiment of the invention, the plating is a nickel layer.
The invention has the following advantages:
the LED packaging structure adopts the nitrogen plasma to carry out the treatment of the upper surface of the plating layer so as to form a rough nitrogen treatment layer, the wettability of the nitrogen treatment layer is poor, the climbing of a spacing material (namely an insulating resin material) can be prevented, and the reliability of electric connection is ensured. In addition, the wiring metal layer is provided with a bowl-shaped side surface, so that the spacing material is embedded between the plating layer and the heat dissipation substrate, and the purposes of preventing stripping and further preventing climbing can be realized on the basis of ensuring the volume of the spacing groove filled with the spacing material.
Drawings
FIG. 1 is a cross-sectional view of an LED package structure of the present invention;
FIG. 2 is a partial enlarged view of the LED package structure of the present invention;
FIGS. 3-11 are schematic diagrams of LED packaging methods of the present invention;
fig. 12 is a cross-sectional view of a prior art LED package structure.
Detailed Description
The LED packaging structure can prevent the insulating resin material between the wiring metal layers from climbing to the upper surface of the coating, thereby ensuring the welding reliability, avoiding the problems of insufficient solder and unreliable welding, simultaneously improving the electrical insulation formation of the wiring metal layers and ensuring the yield and the reliability of the LED packaging structure.
Referring to fig. 1 and 2, the LED package structure of the present invention is a serial connection package structure of a plurality of LED chips 22, and is integrated on a single heat dissipation substrate 10, where the heat dissipation substrate 10 may be, for example, a ceramic substrate, and the heat dissipation substrate 10 has certain rigidity, so as to prevent a warpage problem caused by heat of the LED package structure.
The heat dissipation substrate 10 is provided with a metal layer 14, preferably, the material of the metal layer 14 is copper, aluminum, silver, and the like, and most preferably, the metal layer 14 is a wiring layer, the side surface of which is bowl-shaped, that is, an embedded shape 16, and is in island-shaped isolated distribution via a plurality of spacing grooves. The spacer grooves have an embedded pattern, which is determined by the bowl shape of the metal layer 14, and the embedded structure can make the spacer material 21 have a larger occupied volume, and can prevent peeling and further achieve the purpose of preventing the spacer material 21 from climbing.
Forming a plating layer on the metal layer 14 by electroplating or electroless plating, the plating layer including a first plating layer 19 on an upper surface and a second plating layer 18 on a side surface, wherein the first plating layer 19 is bombarded by nitrogen plasma, and a nitrogen treatment layer 20 is formed on the upper surface; the nitrogen-treated layer 20 is a very thin layer that does not substantially destroy the inner structure of the first plating layer. In some embodiments, however, the nitrogen-treated layer 20 may be the entire first plating layer 19 (i.e., both are coincident). And the nitrogen-treated layer 20 has a rough surface with poor wettability, preferably significantly inferior to that of the second plating layer 18, so that the spacer 21 is not easily extended on the upper surface, and thus reliability of subsequent soldering can be achieved. Preferably, the first and second plating layers are nickel, and the nitrogen treated layer 20 has a nickel layer structure of nitrogen.
The spacing groove is filled with a spacing material 21, the spacing material 21 is generally a high-K polymer material, such as epoxy resin, PI, PBO, etc., and the height thereof is lower than the nitrogen treatment layer 20; and, due to the wettability, the top surface of the spacer material 21 is a concave surface, which has a curved surface with a curvature, as can be seen in fig. 2.
A plurality of LED chips 22 soldered to the nitrogen treatment layer 20 via solder layers 23 and electrically connected to the metal layer 14. The LED chip 22 is a vertical LED chip, and the solder layer has a tin-silver content.
Further, it is worth mentioning that since the nitrogen-treated layer 20 is a nickel layer having nitrogen, the solder layer 23 forms an alloy layer (not shown) with nickel when the LED chip 22 is soldered by the solder layer 23, and oxidation of the soldering surface can be prevented at the time of soldering due to the nitrogen margin, which contributes to reliability of soldering.
The invention also provides a packaging method of the LED packaging structure, which specifically comprises the following steps:
firstly, referring to fig. 3, a heat dissipation substrate 10 is provided, and a photoresist resin layer 11 is laminated on the heat dissipation substrate 10; it may be in the form of a dry film, rolled using a roller, or may be laminated on the heat-dissipating substrate 10 in the form of a wet film, and then cured. The photoresist layer 11 is made of a conventional photosensitive resin material, and will not be described herein.
Referring to fig. 4, next, the photoresist resin layer 11 is patterned using photolithography techniques to form a plurality of discrete openings 12; at this time, the plurality of patterned photoresist resin layers 11 have a plurality of wedge shapes, and the sidewalls thereof have a certain inclination angle between 60 and 80 degrees, which can be achieved by anisotropic etching.
Referring to fig. 5, baking the photoresist layer 11 to make the sidewall of the opening 12 in a bowl shape 13, that is, the sidewall of the opening 12 has an inwardly embedded arc surface, and the bowl shape 13 has a blocking effect in the subsequent nitrogen treatment; in the present embodiment, the baking temperature is higher than the softening temperature of the photoresist layer 11, for example, higher than 80 ℃.
Referring next to fig. 6, a metal material is filled in the opening 12 to form a metal layer 14 conformally; it may be formed by a method including electroplating, electroless plating, vapor deposition, or sputtering, without being limited thereto. The metal layer 14 may be any suitable highly conductive metal material, preferably copper. After the formation of the metal layer 14, it is also possible to include, for example, a CMP step to planarize the surface of the metal layer 14.
Referring to fig. 7, the photoresist resin layer 11 is etched and removed by using an acid washing liquid such as HF acid, so that the metal layer 14 has a plurality of spaced grooves 15; the shape of the spacer groove 15 is identical to that of the patterned photoresist resin layer 11, and it has an arc-shaped sidewall. Correspondingly, the side surface of the metal layer 14 also has a bowl-shaped arc surface 16, and the arc surface 16 is embedded into the bottom of the metal layer 14.
Then, plating layers 17 are formed on the upper surface and the side surfaces of the metal layer 14, see fig. 8. The plating layer 17 is preferably plated or electroless plated, and the material thereof is preferably nickel. And the plating layer 17 is sufficiently thin so that the side surface of the plating layer 17 also has a bowl shape, which is set for facilitating the nitrogen treatment.
Referring to fig. 9, the plating layer 17 is subjected to plasma bombardment with nitrogen to form a nitrogen-treated layer 20 on the upper surface. Specifically, the nitrogen gas may be plasmatized and subjected to plasma bombardment perpendicular to the upper surface in a nitrogen gas atmosphere, and the nitrogen treated layer 20 may be formed on the first plating layer 19 on the upper surface of the metal layer, the nitrogen treated layer 20 having a rough surface. And the second plating layer 18 on the side of the metal layer is substantially not bombarded by plasma, which ensures superior wetting.
Referring to fig. 10, a spacer material 21 is filled in the spacer groove 15; the spacer material 21 is filled by a process of spot coating, dropping, screen printing, or the like. And since the wettability of the second plating layer 18 is better than that of the first plating layer 19 (due to the presence of the nitrogen-treated layer 20), the spacer material 21 may fill the spacer groove 15 more and not climb to the surface of the first plating layer 19 (or the surface of the nitrogen-treated layer 20), and preferably, the spacer material 21 is flush with the top surface of the first plating layer 19 and has a concave surface on the top surface of the spacer material 21.
Finally, referring to fig. 11, a plurality of LED chips 22 are soldered to the nitride treated layer 20 through solder layers 23 and electrically connected to the metal layer 14. Specifically, the lower electrode of the LED chip 22 is soldered on the metal layer 14 through a solder layer 23, and the upper electrode of the LED chip 22 is soldered on the metal layer 14 through a bonding wire 8. The bonding wire 8 has a bonding pad 24 and a bonding pad 25 at two ends thereof, wherein the bonding pad 25 is bonded to the nitrogen treated layer 20. Due to the nitrogen rich in the nitrogen-treated layer, oxidation of the bonding surface can be prevented at the time of bonding, which contributes to reliability of bonding.
The expressions "exemplary embodiment," "example," and the like, as used herein, do not refer to the same embodiment, but are provided to emphasize different particular features. However, the above examples and exemplary embodiments do not preclude their implementation in combination with features of other examples. For example, even in a case where a description of a specific example is not provided in another example, unless otherwise stated or contrary to the description in the other example, the description may be understood as an explanation relating to the other example.
The terminology used in the present invention is for the purpose of illustrating examples only and is not intended to be limiting of the invention. Unless the context clearly dictates otherwise, singular expressions include plural expressions.
While example embodiments have been shown and described, it will be apparent to those skilled in the art that modifications and changes may be made without departing from the scope of the invention as defined by the claims.

Claims (10)

1. A method of LED packaging, comprising the steps of:
(1) providing a heat dissipation substrate, and pressing a photoresist resin layer on the heat dissipation substrate;
(2) patterning the photoresist resin layer by using a photoetching technology to form a plurality of discrete openings;
(3) baking the photoresist resin layer to enable the side wall of the opening to be bowl-shaped;
(4) filling a metal material in the opening to form a metal layer in a conformal manner;
(5) removing the photoresist resin layer to enable the metal layer to be provided with a plurality of spacing grooves;
(6) forming a plating layer on the upper surface and the side surface of the metal layer;
(7) performing nitrogen plasma bombardment on the plating layer to form a nitrogen treatment layer on the upper surface;
(8) filling a spacing material in the spacing groove;
(9) and welding a plurality of LED chips on the nitrogen treatment layer through a solder layer, and electrically connecting the LED chips with the metal layer.
2. The LED packaging method of claim 1, wherein: the baking temperature is greater than the softening temperature of the photoresist layer, such as greater than 80 ℃.
3. The LED packaging method of claim 1, wherein: the method for filling metal in the opening comprises electroplating, chemical plating, vapor deposition or sputtering.
4. The LED packaging method of claim 1, wherein: in the step (7), the plasma bombardment of nitrogen on the plating layer specifically includes: and under the nitrogen environment, performing plasma ionization on nitrogen and performing plasma bombardment perpendicular to the upper surface, and forming a nitrogen treatment layer on the upper surface of the metal layer, wherein the nitrogen treatment layer has a rough surface.
5. The LED packaging method of claim 1, wherein: the step (9) specifically includes: and welding the lower electrode of the LED chip on the metal layer through a solder layer, and welding the upper electrode of the LED chip on the metal layer through a bonding wire.
6. An LED packaging structure prepared by the LED packaging method of any one of claims 1-5, comprising:
a heat-dissipating substrate;
the side surface of the metal layer is bowl-shaped and is in island-shaped isolated distribution through the plurality of spacing grooves;
a plating layer covering an upper surface and a side surface of the metal layer, wherein the upper surface is bombarded by nitrogen plasma, and a nitrogen treatment layer is formed on the upper surface;
the spacing material is filled in the spacing groove, and the height of the spacing material is lower than that of the nitrogen treatment layer;
and the LED chips are welded on the nitrogen treatment layer through a solder layer and are electrically connected with the metal layer.
7. The LED package structure of claim 6, wherein: an alloy layer of the solder and the plating layer is formed between the solder layer and the nitrogen treatment layer.
8. The LED package structure of claim 6, wherein: the nitrogen treatment layer has a wettability inferior to that of the plating layer of the side surface.
9. The LED package structure of claim 6, wherein: the top surface of the spacer material is lower than the nitrogen treatment layer, and the top surface of the spacer material is a cambered surface with a curvature.
10. The LED package structure of claim 6, wherein: the plating layer is a nickel layer.
CN201911015875.8A 2019-10-24 2019-10-24 LED packaging structure and packaging method thereof Active CN110660896B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001044166A (en) * 1999-07-29 2001-02-16 Nec Akita Ltd Method of forming conductive film pattern
JP2005191498A (en) * 2003-12-26 2005-07-14 Mitsui High Tec Inc Lead frame for use in premold type semiconductor device and its manufacturing method
JP2015144257A (en) * 2013-12-26 2015-08-06 京セラ株式会社 Circuit board and manufacturing method thereof
JP2018082130A (en) * 2016-11-18 2018-05-24 新光電気工業株式会社 Wiring board and manufacturing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001044166A (en) * 1999-07-29 2001-02-16 Nec Akita Ltd Method of forming conductive film pattern
JP2005191498A (en) * 2003-12-26 2005-07-14 Mitsui High Tec Inc Lead frame for use in premold type semiconductor device and its manufacturing method
JP2015144257A (en) * 2013-12-26 2015-08-06 京セラ株式会社 Circuit board and manufacturing method thereof
JP2018082130A (en) * 2016-11-18 2018-05-24 新光電気工業株式会社 Wiring board and manufacturing method

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Effective date of registration: 20201110

Address after: No.11, Industrial Avenue, Wuping Industrial Park, Wuping County, Longyan City, Fujian Province, 364300

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