CN110718622B - Light emitting diode device and manufacturing method thereof - Google Patents
Light emitting diode device and manufacturing method thereof Download PDFInfo
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- CN110718622B CN110718622B CN201911015863.5A CN201911015863A CN110718622B CN 110718622 B CN110718622 B CN 110718622B CN 201911015863 A CN201911015863 A CN 201911015863A CN 110718622 B CN110718622 B CN 110718622B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Abstract
The invention provides a light-emitting diode device and a manufacturing method thereof.A nickel-silicon plating layer is formed on a nickel plating layer of the light-emitting diode device, and the nickel-silicon plating layer has poor wettability, so that climbing of a spacing material can be prevented, and the reliability of electric connection is ensured. In addition, the wiring metal layer is provided with an embedded step-shaped side face, so that the spacing material is embedded between the nickel plating layer and the heat dissipation substrate, and the purposes of preventing stripping and further preventing climbing can be achieved on the basis of ensuring the volume of the spacing groove filled with the spacing material.
Description
Technical Field
The invention relates to the field of photoelectric device packaging test, in particular to a light-emitting diode device and a manufacturing method thereof.
Background
Most of the existing light emitting diode devices are of a COB structure, i.e., a chip-on-board structure, wherein wiring layers are often formed on a substrate for electrical connection, and in order to ensure electrical reliability between the wiring layers, an insulating material is often filled between the plating layers to increase electrical insulation performance. As shown in fig. 13, a substrate 1 has a wiring layer 2, the wiring layer 2 is a plurality of discrete island structures, wherein a surface of the wiring layer 2 is plated with a plating layer 3, the plating layer 3 is generally made of nickel, gold, silver, and the like, a back surface of an LED chip 6 is soldered on the plating layer 3 through a solder layer 7, a light exit surface electrode of the LED chip 6 is soldered on the plating layer 3 through a bonding wire 8 to achieve electrical connection, and the soldered portion has a soldering point 9. Since the plating layer 3 has wettability, the resin insulation material 4 filled at the gap climbs to the upper surface of the plating layer 3, as shown by the climbing portion 5 of fig. 13, which may cause the cold joint of the bonding wire 8, and the bonding force of the solder layer 7 to the plating layer 3 is also affected.
Disclosure of Invention
In order to solve the above problems, the present invention provides a method for manufacturing a light emitting diode device, including the steps of:
(1) providing a heat dissipation substrate, pressing a first dry film on the heat dissipation substrate, and performing first illumination;
(2) pressing a second dry film on the first dry film, and performing second illumination;
(3) removing the dry film subjected to light irradiation to form a plurality of openings in the dry film, wherein the edges of the openings have a step shape and the apertures of the openings are large at the top and small at the bottom;
(4) filling a metal material in the opening to form a metal layer in a conformal manner;
(5) removing the non-illuminated dry film to enable the metal layer to be provided with a plurality of spacing grooves;
(6) forming nickel plating layers on the upper surface and the side surfaces of the metal layer;
(7) forming a nickel-silicon plating layer on an upper surface of the nickel plating layer;
(8) filling a spacing material in the spacing groove;
(9) and welding a plurality of LED chips on the nickel-silicon coating through a solder layer, and electrically connecting the LED chips with the metal layer.
And (3) pressing a third dry film on the second dry film and performing third illumination.
Wherein the nickel silicon plating layer is not formed on a side surface of the metal layer.
The nickel plating layer is formed by adopting an electroplating or chemical plating method, and the nickel silicon plating layer is formed by adopting a co-sputtering method.
Wherein the step (9) specifically comprises: and welding the lower electrode of the LED chip on the nickel-silicon coating through a solder layer, and welding the upper electrode of the LED chip on the nickel-silicon coating through a bonding wire.
The invention also provides a light-emitting diode device, which is prepared by the manufacturing method of the light-emitting diode device, and the manufacturing method specifically comprises the following steps:
a heat-dissipating substrate;
the side surface of the metal layer is in an embedded step shape and is in island-shaped isolated distribution through a plurality of spacing grooves;
the nickel coating covers the upper surface and the side surface of the metal layer, wherein the upper surface of the nickel coating is provided with a nickel-silicon coating;
the spacing material is filled in the spacing groove, and the height of the spacing material is lower than that of the nickel-silicon coating;
and the LED chips are welded on the nickel-silicon coating through a solder layer and are electrically connected with the metal layer.
Wherein an alloy layer of the solder layer and the nickel-silicon plating layer is formed between the solder layer and the nickel-silicon plating layer.
Wherein the solder layer is tin solder, and the silicon content in the nickel-silicon coating is 5-10 wt%; the tin solder and the nickel-silicon plating layer form an alloy layer of tin and nickel, and a silicon precipitation layer is formed at an interface.
Wherein the wettability of the nickel silicon plating layer is lower than that of the nickel plating layer of the side surface.
The top surface of the spacing material is lower than the nickel-silicon coating, and the top surface of the spacing material is an arc surface with a curvature.
The invention has the following advantages:
the light emitting diode device of the invention forms the nickel-silicon coating on the nickel coating, and the wettability of the nickel-silicon coating is poor, so that the climbing of a spacing material (namely an insulating resin material) can be prevented, and the reliability of electric connection is ensured. In addition, the wiring metal layer is provided with an embedded step-shaped side face, so that the spacing material is embedded between the nickel plating layer and the heat dissipation substrate, and the purposes of preventing stripping and further preventing climbing can be achieved on the basis of ensuring the volume of the spacing groove filled with the spacing material.
Drawings
Fig. 1 is a cross-sectional view of a light emitting diode device of the present invention;
fig. 2 is a partially enlarged view of a light emitting diode device of the present invention;
fig. 3-12 are schematic diagrams of methods of fabricating light emitting diode devices of the present invention;
fig. 13 is a cross-sectional view of a prior art light emitting diode device.
Detailed Description
The light-emitting diode device can prevent the insulating resin material between the wiring metal layers from climbing to the upper surface of the plating layer, thereby ensuring the welding reliability, avoiding the problems of insufficient solder and unreliable welding, simultaneously improving the electrical insulation of the wiring metal layers and ensuring the yield and the reliability of the light-emitting diode device.
Referring to fig. 1 and 2, the light emitting diode device of the present invention is a serial package structure of a plurality of LED chips 22, and is integrated on a single heat dissipation substrate 10, where the heat dissipation substrate 10 may be, for example, a ceramic substrate, and the heat dissipation substrate 10 has certain rigidity, so as to prevent a warpage problem caused by heat of the light emitting diode device.
The heat dissipation substrate 10 is provided with a metal layer 15, preferably, the metal layer 15 is made of copper, aluminum, silver, or the like, most preferably, copper, the metal layer 15 is a wiring layer, the side surface of the wiring layer is an embedded step shape 16, and the wiring layer is in island-shaped isolated distribution through a plurality of spacing grooves 17. The spacer grooves 17 have an embedded pattern due to the stepped shape of the metal layer 15, and the embedded structure allows the spacer material 50 to have a large occupied volume, and prevents peeling and further prevents the spacer material 20 from climbing.
And forming a nickel plating layer 18 on the metal layer 15 by electroplating or chemical plating, wherein the nickel plating layer 18 covers the upper surface and the side surface of the metal layer 15, and the thickness of the nickel plating layer 18 is 100-300 microns. And then co-sputtering a nickel-silicon coating 19 on the nickel coating 18 by using a nickel target and a silicon target, wherein the thickness of the nickel-silicon coating 19 is 50-150 micrometers. The nickel-silicon plating layer 19 has a poor wettability, preferably, a significantly poor wettability, compared to the nickel plating layer 18, and thus the spacer material 20 is not easily extended on the upper surface, and thus, reliability of subsequent soldering can be achieved.
A spacer material 20 is filled in the spacer groove 17, wherein the spacer material 20 is generally a high-K polymer material, such as epoxy resin, PI, PBO, etc., and has a height lower than that of the nickel-silicon plating layer 19; and, due to the wettability, the top surface of the spacer material 20 is a concave surface, which has a curved surface with a curvature, as can be seen in fig. 2.
And a plurality of LED chips 21 soldered to the nickel-silicon plating layer 19 via solder layers 22 and electrically connected to the metal layer 15. The LED chip 21 is a vertical LED chip, and the solder layer 22 has a tin-silver content.
It should be noted that an alloy layer 26 of the solder layer 22 and the nickel-silicon plating layer 19 is formed between the solder layer 22 and the nickel-silicon plating layer 19. Wherein, the solder layer 22 is tin solder, and the silicon content in the nickel-silicon plating layer 19 is 5-10 wt%; the tin solder and the nickel-silicon plating layer 19 form an alloy layer of tin and nickel, and simultaneously, a silicon precipitation layer is formed at the interface, and the precipitation layer is a discontinuous layer and even distributed in an island shape. The presence of this silicon at the time of soldering is instrumental in the reliability of soldering.
The invention also provides a manufacturing method of the light-emitting diode device, which specifically comprises the following steps:
firstly, referring to fig. 3, providing a heat dissipation substrate 10, pressing a first dry film 11 on the heat dissipation substrate 10, and performing a first illumination, wherein an illumination area is shown as a dotted line portion in fig. 3; the dry film is photoresist and is rolled by a roller.
Referring to fig. 4, a second dry film 12 is pressed on the first dry film 11, and a second light is irradiated in a dotted area as shown in fig. 4, wherein the second light is overlapped with the first light in a vertical direction, and the first light is smaller than the second light.
Referring to fig. 5, a third dry film 13 is pressed on the second dry film 12, and a third light is irradiated in a region as shown by a dotted line of fig. 5, wherein the third light is overlapped with the second light in a vertical direction, and the second light is smaller than the third light.
Referring to fig. 6, the first to third dry films 11 to 13 illuminated with light are removed to form a plurality of openings 14 in the dry films, wherein edges of the openings 14 have a stepped shape and have a large and small upper and lower aperture. Although three dry films are formed, the opening 14 is formed by forming two dry films or four dry films or more and performing photolithography.
Referring next to fig. 7, a metal material is filled in the opening 14 to form a metal layer 15 conformally; it may be formed by a method including electroplating, electroless plating, vapor deposition, or sputtering, without being limited thereto. The metal layer 15 may be any suitable highly conductive metal material, preferably copper. After the formation of the metal layer 15, it is also possible to include, for example, a CMP step to planarize the surface of the metal layer 15.
Referring to fig. 8, the first to third dry films 11 to 13, which are not irradiated with light, are removed by etching using an acid washing liquid such as HF acid, so that the metal layer 15 has a plurality of spaced grooves 17; the shape of the side of the spacer 17 is identical to that of the patterned dry film, and it has an embedded step shape 16.
Then, a nickel plating layer 18 is formed on the upper surface and the side surface of the metal layer 15, see fig. 9. The nickel plating 18 is preferably electroplated or electroless plated. And the nickel plating layer 17 is sufficiently thin, for example, 100-300 μm, so that the side surface of the nickel plating layer 18 also has a step shape, which is set to prevent the side surface from forming nickel-silicon material during the subsequent co-sputtering.
Referring to fig. 10, the nickel-silicon plating layer 19 is formed by a co-sputtering method, and co-sputtering is performed in a sputtering chamber by using a silicon target and a nickel target to form the nickel-silicon plating layer 19, wherein the content of silicon in the nickel-silicon plating layer 19 is 5-10 wt%, and the thickness of the nickel-silicon plating layer is 50-150 micrometers. And due to the presence of the embedded step shape 16, the nickel plating layer on the side of the metal layer 15 is not substantially formed with nickel silicon material, which ensures superior wettability.
Referring to fig. 11, a spacer material 20 is filled in the spacer groove 17; the spacer material 20 is filled by a process of dispensing, dropping, screen printing, or the like. And because the wettability of the nickel silicon coating layer 19 is better than that of the nickel coating layer 18, the spacer material 20 may more fill the spacer groove 17 and does not climb to the surface of the nickel silicon coating layer 19, and preferably, the spacer material 20 is flush with the top surface of the nickel silicon coating layer 19 and has a concave surface on the top surface of the spacer material 20.
Finally, referring to fig. 12, a plurality of LED chips 21 are soldered to the nickel silicon plating layer 19 through solder layers 22 and electrically connected to the metal layer 15. Specifically, the lower electrode of the LED chip 21 is soldered to the nickel-silicon plating layer 19 through a solder layer 22, and the upper electrode of the LED chip 21 is soldered to the nickel-silicon plating layer 19 through a bonding wire 23. The two ends of the bonding wire 23 are respectively provided with a bonding pad 24 and a bonding pad 25, wherein the bonding pad 24 is bonded on the nickel-silicon plating layer 19. The tin solder and the nickel-silicon plating layer 19 form an alloy layer of tin and nickel, and simultaneously, a silicon precipitation layer is formed at the interface, and the precipitation layer is a discontinuous layer and even distributed in an island shape. The presence of this silicon at the time of soldering is instrumental in the reliability of soldering.
The expressions "exemplary embodiment," "example," and the like, as used herein, do not refer to the same embodiment, but are provided to emphasize different particular features. However, the above examples and exemplary embodiments do not preclude their implementation in combination with features of other examples. For example, even in a case where a description of a specific example is not provided in another example, unless otherwise stated or contrary to the description in the other example, the description may be understood as an explanation relating to the other example.
The terminology used in the present invention is for the purpose of illustrating examples only and is not intended to be limiting of the invention. Unless the context clearly dictates otherwise, singular expressions include plural expressions.
While example embodiments have been shown and described, it will be apparent to those skilled in the art that modifications and changes may be made without departing from the scope of the invention as defined by the claims.
Claims (10)
1. A method of manufacturing a light emitting diode device, comprising the steps of:
(1) providing a heat dissipation substrate, pressing a first dry film on the heat dissipation substrate, and performing first illumination;
(2) pressing a second dry film on the first dry film, and performing second illumination;
(3) removing the dry film subjected to light irradiation to form a plurality of openings in the dry film, wherein the edges of the openings have a step shape and the apertures of the openings are large at the top and small at the bottom;
(4) filling a metal material in the opening to form a metal layer in a conformal manner;
(5) removing the non-illuminated dry film to enable the metal layer to be provided with a plurality of spacing grooves;
(6) forming nickel plating layers on the upper surface and the side surfaces of the metal layer;
(7) forming a nickel-silicon plating layer on an upper surface of the nickel plating layer;
(8) filling a spacing material in the spacing groove, wherein the spacing material is a high-K polymer material;
(9) and welding a plurality of LED chips on the nickel-silicon coating through a solder layer, and electrically connecting the LED chips with the metal layer.
2. The method for manufacturing a light-emitting diode device according to claim 1, wherein: and (3) pressing a third dry film on the second dry film between the step (2) and the step (3), and performing third illumination.
3. The method for manufacturing a light-emitting diode device according to claim 1, wherein: the nickel silicon plating layer is not formed on the side surface of the metal layer.
4. The method for manufacturing a light-emitting diode device according to claim 1, wherein: the nickel plating layer is formed by adopting an electroplating or chemical plating method, and the nickel silicon plating layer is formed by adopting a co-sputtering method.
5. The method for manufacturing a light-emitting diode device according to claim 1, wherein: the step (9) specifically includes: and welding the lower electrode of the LED chip on the nickel-silicon coating through a solder layer, and welding the upper electrode of the LED chip on the nickel-silicon coating through a bonding wire.
6. A light-emitting diode device produced by the method for producing a light-emitting diode device according to any one of claims 1 to 5, comprising:
a heat-dissipating substrate;
the side surface of the metal layer is in an embedded step shape and is in island-shaped isolated distribution through a plurality of spacing grooves;
the nickel coating covers the upper surface and the side surface of the metal layer, wherein the upper surface of the nickel coating is provided with a nickel-silicon coating;
the spacing material is filled in the spacing groove, the height of the spacing material is lower than that of the nickel-silicon coating, and the spacing material is a high-K polymer material;
and the LED chips are welded on the nickel-silicon coating through a solder layer and are electrically connected with the metal layer.
7. The light-emitting diode device according to claim 6, wherein: an alloy layer of the solder layer and the nickel-silicon plating layer is formed between the solder layer and the nickel-silicon plating layer.
8. The light-emitting diode device according to claim 7, wherein: wherein the solder layer is tin solder, and the silicon content in the nickel-silicon coating is 5-10 wt%; the tin solder and the nickel-silicon plating layer form an alloy layer of tin and nickel, and a silicon precipitation layer is formed at an interface.
9. The light-emitting diode device according to claim 6, wherein: the wettability of the nickel silicon plating layer is inferior to that of the nickel plating layer.
10. The light-emitting diode device according to claim 6, wherein: the top surface of the spacing material is lower than the nickel-silicon coating, and
the top surface of the spacer material is a curved surface having a curvature.
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| CN201911015863.5A CN110718622B (en) | 2019-10-24 | 2019-10-24 | Light emitting diode device and manufacturing method thereof |
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| CN201911015863.5A CN110718622B (en) | 2019-10-24 | 2019-10-24 | Light emitting diode device and manufacturing method thereof |
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| JP3910171B2 (en) * | 2003-02-18 | 2007-04-25 | シャープ株式会社 | Semiconductor light emitting device, method for manufacturing the same, and electronic imaging device |
| JPWO2012036281A1 (en) * | 2010-09-17 | 2014-02-03 | ローム株式会社 | Semiconductor light emitting device, manufacturing method thereof, and display device |
| KR102307062B1 (en) * | 2014-11-10 | 2021-10-05 | 삼성전자주식회사 | Semiconductor device, semiconductor device package and lighting apparatus |
| KR102401826B1 (en) * | 2017-09-15 | 2022-05-25 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | Light emitting device package and lighting apparatus |
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| Title |
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| Ni-56Si合金对SiC陶瓷的润湿和铺展;刘桂武等;《硅酸盐学报》;20100815;第38卷(第08期);第1509-1513页 * |
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